WO2002031884A1 - Dispositifs semi-conducteurs non plans possedant une region fermee de charge spatiale - Google Patents

Dispositifs semi-conducteurs non plans possedant une region fermee de charge spatiale Download PDF

Info

Publication number
WO2002031884A1
WO2002031884A1 PCT/RU2001/000409 RU0100409W WO0231884A1 WO 2002031884 A1 WO2002031884 A1 WO 2002031884A1 RU 0100409 W RU0100409 W RU 0100409W WO 0231884 A1 WO0231884 A1 WO 0231884A1
Authority
WO
WIPO (PCT)
Prior art keywords
τiπa
slοy
κρemnievy
vyροzhdenny
meτallοv
Prior art date
Application number
PCT/RU2001/000409
Other languages
English (en)
Russian (ru)
Inventor
Lev Vasilievich Kozhitov
Timofei Yakovlevich Kondratenko
Vsevolod Valerievich Krapukhin
Timofei Timofeevich Kondratenko
Nikolai Ivanovich Mishakin
Galina Georgievna Timoshina
Original Assignee
Lev Vasilievich Kozhitov
Kondratenko Timofei Yakovlevic
Vsevolod Valerievich Krapukhin
Kondratenko Timofei Timofeevic
Nikolai Ivanovich Mishakin
Galina Georgievna Timoshina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU2000125500/28A external-priority patent/RU2173916C1/ru
Priority claimed from RU2000125498/28A external-priority patent/RU2173917C1/ru
Priority claimed from RU2000129626/28A external-priority patent/RU2168801C1/ru
Priority claimed from RU2000129625/28A external-priority patent/RU2168800C1/ru
Application filed by Lev Vasilievich Kozhitov, Kondratenko Timofei Yakovlevic, Vsevolod Valerievich Krapukhin, Kondratenko Timofei Timofeevic, Nikolai Ivanovich Mishakin, Galina Georgievna Timoshina filed Critical Lev Vasilievich Kozhitov
Priority to AU2001296104A priority Critical patent/AU2001296104A1/en
Publication of WO2002031884A1 publication Critical patent/WO2002031884A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Definitions

  • a disadvantage of a well-known building system is the presence of a significant effect of a significant loss of property.
  • the avalanche-diode diode ( ⁇ .S. Sager, ⁇ . ⁇ . ⁇ ald-Perlov “Avalanche-readable diodes and their application in the RMS”, Comp. ,Adi ⁇ , ⁇ . ⁇ - ⁇ -interconnect with a linear or staggered separation of impurities.
  • the Gann diodes are known, containing two popular ⁇ + types, the active popular one and the same and the other one are met on March 9, 09/18/19/18.
  • the disadvantages of the aforementioned households are the low level of output, the low mass of the body, and the share of electricity.
  • Izves ⁇ en ⁇ i ⁇ is ⁇ s ⁇ de ⁇ zhaschyy mn ⁇ g ⁇ sl ⁇ yny me ⁇ alliches ⁇ y ⁇ a ⁇ dny ⁇ n ⁇ a ⁇ , mn ⁇ g ⁇ sl ⁇ yn ⁇ y me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ u ⁇ avlyayuscheg ⁇ ele ⁇ g ⁇ da, vy ⁇ zhdenny m ⁇ n ⁇ - ⁇ is ⁇ allshes ⁇ y ⁇ emnievy ⁇ + ⁇ i ⁇ a sl ⁇ y, and ⁇ e ⁇ vy v ⁇ y vy ⁇ zhtsennye m ⁇ n ⁇ is ⁇ al- liches ⁇ ie ⁇ emnievye ⁇ + ⁇ i ⁇ a sl ⁇ i and- ⁇ ivngy m ⁇ n ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ ⁇ i ⁇ a sl ⁇ y and mn ⁇
  • the disadvantages of the aforementioned diet are the low-level structure of a small, medium-sized community, a small level of dispersed space and electricity.
  • ⁇ a vnu ⁇ enney ⁇ ve ⁇ n ⁇ s ⁇ i tsilind ⁇ a z ⁇ s ⁇ mi ⁇ van mn ⁇ g ⁇ sl ⁇ ynsh me ⁇ alliches ⁇ y ⁇ lle ⁇ ny ⁇ n ⁇ a ⁇ g, in the form of cylinders dvu ⁇ ⁇ iches ⁇ i ⁇ sl ⁇ ev, vsh ⁇ lnenny ⁇ of ⁇ azny ⁇ nemagai ⁇ ny ⁇ me ⁇ all ⁇ v, and vnevshey eg ⁇ ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ mi ⁇ vany having ⁇ -ilind ⁇ iches ⁇ uyu ⁇ mu m ⁇ n ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ ⁇ i ⁇ a ⁇ lle ⁇ ny sl ⁇ y, m ⁇ n ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ type is the base layer and
  • ⁇ a 4 a part of the emitter has a multi-layer emitter contact in the form of two v-il-schtschschih layers made from different non-magnetic metals.
  • ⁇ a ⁇ ve ⁇ ⁇ - n ⁇ s ⁇ i m ⁇ n ⁇ is ⁇ alliches ⁇ g ⁇ ⁇ emniev ⁇ g ⁇ ⁇ ⁇ i ⁇ a is ⁇ alliches ⁇ g ⁇ ⁇ emniev ⁇ g ⁇ ⁇ ⁇ i ⁇ a
  • s ⁇ de ⁇ z haschem mn ⁇ g ⁇ sl ⁇ yny me ⁇ alliches ⁇ y ⁇ a ⁇ dny ⁇ n ⁇ a ⁇ , mn ⁇ - g ⁇ sl ⁇ ynsh me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ u ⁇ avlyayuscheg ⁇ e ⁇ e ⁇ g ⁇ da, vy ⁇ zhdenny m ⁇ n ⁇ i- s ⁇ alltes ⁇ shy ⁇ emnievy ⁇ + ⁇ i ⁇ a sl ⁇ y, and ⁇ e ⁇ vy v ⁇ y vy ⁇ zhdennye m ⁇ n ⁇ is ⁇ alli- ches ⁇ ie ⁇ emnievye ⁇ + ⁇ i ⁇ a sl ⁇ i, a ⁇ ivny m ⁇ n ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ ⁇ i ⁇ a sl ⁇ y, vy ⁇ z
  • the specific electrical unit of the upper cylinder is a pure metal in each compact unit of the lower electrical unit.
  • cylindrical layers are in many cases sold in non-ferrous metals, such as copper, aluminum or other types of metal.
  • a multi-crystalline dark-colored ⁇ + type is distinguished in the form of a hollow cylinder.
  • the second metal contact was applied in the form of two 6 tsilind ⁇ iches ⁇ i ⁇ sl ⁇ ev, vsh ⁇ lnenny ⁇ of ⁇ azny ⁇ nemagni ⁇ ny ⁇ me ⁇ all ⁇ v, ⁇ i e ⁇ m specific ele ⁇ v ⁇ dn ⁇ s ⁇ ve ⁇ neg ⁇ tsilind ⁇ iches ⁇ g ⁇ sl ⁇ ya me ⁇ alla in ⁇ azhd ⁇ y ⁇ a ⁇ e sl ⁇ ev b ⁇ lshe udeln ⁇ y ele ⁇ v ⁇ dn ⁇ s ⁇ i nizhneg ⁇ tsilind ⁇ iches ⁇ g ⁇ sl ⁇ ya me ⁇ alla ⁇ na ⁇ avleniyu ⁇ e ⁇ aniya ele ⁇ iches ⁇ g ⁇ ⁇ a.
  • the declared version of the Gunn dioda contains a metallic anode and a cassette, the first available for the process, the + + + + + + + + + + + + + + + + 7 second degenerate multi-glossy plausible ⁇ + type and active multi-functional.
  • Specific electrical power of the upper and lower span of the metal in comparison with the low electrical power of the unit is low ⁇ ⁇ n ⁇ e ⁇ ny ⁇ ⁇ ma ⁇ me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ ⁇ a ⁇ da vy ⁇ lnen of nemagni ⁇ ny ⁇ me ⁇ all ⁇ v: m ⁇ libdena or v ⁇ l ⁇ ama or vanadium and the ⁇ ds ⁇ venny ⁇ me ⁇ all ⁇ v and ⁇ sch ⁇ shnd ⁇ iches ⁇ ie sl ⁇ i in me ⁇ alliches ⁇ m ⁇ n ⁇ a ⁇ e an ⁇ da vsh ⁇ lneny of nemagni ⁇ ny ⁇ me ⁇ all ⁇ v, na ⁇ ime ⁇ ,, z ⁇ l ⁇ a or se ⁇ eb ⁇ a or ⁇ la ⁇ iny or aluminum.
  • All of the inventive phrases of the invention are all from the semi-finished diode materials made from the optional materials: ⁇ , or Consequently varieties From ⁇ , or ⁇ .
  • ⁇ ⁇ n ⁇ e ⁇ ny ⁇ ⁇ ma ⁇ iz ⁇ b ⁇ e ⁇ eniya sl ⁇ i in me ⁇ alliches ⁇ m ⁇ n ⁇ a ⁇ e an ⁇ da vy ⁇ lneny of nemagni ⁇ n ⁇ g ⁇ me ⁇ alla, na ⁇ ime ⁇ , ⁇ la ⁇ iny or z ⁇ l ⁇ a or ⁇ i ⁇ ana or m ⁇ libdena or v ⁇ l ⁇ ama and tsilind ⁇ iches ⁇ ie sl ⁇ i in me ⁇ alliches ⁇ m ⁇ n ⁇ a ⁇ e ⁇ a ⁇ da vy ⁇ lneny of nemagai ⁇ ny ⁇ me ⁇ all ⁇ v, na ⁇ ime ⁇ , aluminum, or m ⁇ libdena, or silver, or titanium, or copper, or gold.
  • All semi-operational diode layers are made from semi-finished materials: , While ⁇ , or ⁇ réelle ⁇ , or ⁇ .
  • FIG. 1 is an illustration of an embodiment of a transformer of the invention. 9 In FIG. 2, an illustration of an embodiment of the invention is illustrated.
  • Figs. 3, 4, 5 various embodiments of avalanche-hazardous dashboard construction are shown.
  • a dielectric protective layer 17 of the second dioxide of the given thickness is applied.
  • the benefit of the invention is that the invention is carried out in the following.
  • the voltage between voltage levels 2, 8, 11 and 12 increases, the voltage transient rises, the voltage rises, the voltage rises, the voltage rises ⁇ the strength of the cylindrical structure of the process of separation of the electric field in layers 5 and 6 is the same as the uniform one 10 dius.
  • the secondary incident is muffled, leakage paths are reduced, which increases the stability of the transistor.
  • the product shown in FIG. 2 contains the following constituent elements: a degraded, malfunctioning, brown ⁇ + ⁇ layer 18 (used), grown as a cylinder.
  • Layer 24 is coated with a large metal-analogue plate 25 in the form of two cylindrical layers 26, 27 of a predetermined length made of large non-magnetic, small or small metal, small or small 20 ⁇ ⁇ ele sl ⁇ ya 22 s ⁇ mi ⁇ van mn ⁇ g ⁇ sl ⁇ yny me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ g u ⁇ avlyayuscheg ⁇ ele ⁇ g ⁇ da as simme ⁇ ichn ⁇ y ⁇ a ⁇ y ⁇ n ⁇ a ⁇ v 28 and 29, ⁇ azhdy of ⁇ y ⁇ s ⁇ de ⁇ zhi ⁇ two ⁇ schlind ⁇ iches ⁇ i ⁇ sl ⁇ ya 30, 31 and 32, 33, vy ⁇ lnenny ⁇ of ⁇ azny ⁇ nemagni ⁇ ny ⁇ me ⁇ all ⁇ v, na ⁇ ime ⁇ , se ⁇ eb ⁇ a or z ⁇ l ⁇ a or aluminum , or copper, or plate, or volfama.
  • the specific electrical capacity of the unit is in the case of a slindable metal in 25 each compact electric unit.
  • the principle of operation of the invention is as follows.
  • the charge is placed between the customer and customer contacts 19 and 25 of the machine.
  • ⁇ ⁇ n ⁇ a ⁇ u 28 u ⁇ avlyayuscheg ⁇ ele ⁇ da ⁇ i ⁇ ladyvae ⁇ sya u ⁇ avlyayuschee na ⁇ yazhenie causing u ⁇ avlyayu ⁇ i- ⁇ ⁇ , with ⁇ m ⁇ shyu ⁇ g ⁇ ⁇ eguli ⁇ ue ⁇ sya value ele ⁇ iches ⁇ g ⁇ ⁇ a, ⁇ e ⁇ ayuscheg ⁇ between ⁇ a ⁇ dnym and an ⁇ dnym ⁇ n ⁇ a ⁇ ami 19 and 25.
  • the pressure of the cylinders ensures a decrease in the electrical and magnetic instabilities, which leads to an increase in the reliability of operation.
  • non-magnetic metals can be used: molybdenum, or wolffrom, or vanadium and its related metals.
  • the defective motorized belt ⁇ + type of layer 36 (support) of the cylindrical form was raised.
  • Specific electric power of the upper ⁇ -schlindric layer of 40 metal in the United States is larger than the electric capacity of 41 mm of the small Cylindrical layers 40, 41, in many cases, can be made from non-metal, for example, platinum, copper, gold, or silver.
  • the principle of operation of the diode is as follows. The charge is between the 35 and 39 diodes in the opposite direction.
  • the separation of the electrical helmet is a single radial. This eliminates the risk of electrical damage, and also reduces the level of electrical degradation in the mode of avalanche, which is used for the maintenance of public goods.
  • the diode shown in FIG. 4 contains the following functional elements: a small, metallic black ⁇ + type of layer 42 (supplied), mounted as a cylinder.
  • the first metal part 43 made in the form of a large cylinder, is composed of a large cylinder, composed of 12 two layers 44, 45, expelled from various non-magnetic metals, for example, platinum, or gold, or silver, or aluminum, or copper, or titanium.
  • the specific electrical capacity of 49% of the metal is larger than that of the larger electric heating unit of the United States.
  • the principle of operation of the diode is as follows. The load is placed between the 43 and 48 diodes in the back direction.
  • the separation of the electric field is a single radial. By doing so, it eliminates the effect of electricity, and also reduces the level of electrical degradation in the mode of avalanche, in order to prevent the occurrence of pollution.
  • the diode shown in Fig. 5 contains the following components: produced by the second large black ⁇ + type 51 (spherical), grown as a long cylinder. ⁇ a outer ⁇ ve ⁇ n ⁇ s ⁇ i sl ⁇ ya 51 ⁇ sled ⁇ va ⁇ elsh s ⁇ mi ⁇ vany imeyu ⁇ sche tsilind ⁇ iches ⁇ uyu ⁇ mu a ⁇ ivny m ⁇ n ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ ⁇ i ⁇ a sl ⁇ y 52 vy ⁇ zhdenny m ⁇ sh ⁇ is ⁇ alliches ⁇ y ⁇ emnievy ⁇ + ⁇ i ⁇ a sl ⁇ y 53.
  • Specific power of the upper part of the 58th metal is in the case of the specific electric part of the lower part of the 59th direction of the electrical power supply.
  • the principle of operation of the diode for the third embodiment of the invention is concluded in the following.
  • the charge is between the 54 and 57 diodes in the back direction.
  • the separation of the electrical helmet is a single radial. This eliminates the risk of electrical disruption, and also reduces the level of electrical degradation in the mode of avalanche, which is used to collect signals.
  • non-magnetic metals can be used: molybdenum, or wolfraphy, or vanadium and its related metals.
  • molybdenum or wolfraphy
  • vanadium and its related metals On the external contact surface of the 60, the first defective multi-functional nt + type with a layer of 61 (optional) was raised.
  • P ⁇ ve ⁇ sl ⁇ ya 63 applied mn ⁇ g ⁇ sl ⁇ yny me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ 64 an ⁇ da as dvu ⁇ tsilind ⁇ iches ⁇ i ⁇ sl ⁇ ev 65, 66, of vsh ⁇ shenny ⁇ ⁇ azny ⁇ nemagai ⁇ ny ⁇ me ⁇ all ⁇ v.
  • the specific electric capacity of the upper cylindrical layer is 65 metal, while the specific electric capacity of the lower cylinder is volatile Cylindrical layers 65, 66 can be made of non-magnetic metal, for example, gold, or silver, or aluminum, in the case of a multi-metal contact.
  • Semi-final words 61, 62, 63 are made from the source materials: ⁇ , or ⁇ réelle ⁇ , or ⁇ . 14
  • the cylindrical structure of the Gunn diode allows you to start up the large working currents, which ensure a high level of generat- ed capacity.
  • the diode illustrated in FIG. 7 contains the following constituent elements: the first degraded, massive, second-hand, second-most, second- most, second- most ⁇ a vnu ⁇ enney ⁇ ve ⁇ n ⁇ s ⁇ i sl ⁇ ya 67 s ⁇ mi ⁇ van me ⁇ al ⁇ iches ⁇ y ⁇ n ⁇ a ⁇ 68 ⁇ a ⁇ da, vy ⁇ lnenny as ⁇ l ⁇ g ⁇ tsilind ⁇ a, s ⁇ s ⁇ yascheg ⁇ of dvu ⁇ sl ⁇ ev 69, 70, vyshlnenny ⁇ of ⁇ azny ⁇ nemagai ⁇ ny ⁇ me ⁇ all ⁇ v, na ⁇ ime ⁇ , aluminum, or se ⁇ eb ⁇ a or ⁇ i ⁇ ana or copper or z ⁇ l ⁇ a or m ⁇ libdena. Specific electric power of the upper and lower part of 69 metal in the United States is the largest electric power of the territory of the United Kingdom
  • P ⁇ ve ⁇ sl ⁇ ya 72 applied me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ 73 an ⁇ da as dvu ⁇ -shlind ⁇ iches ⁇ i ⁇ nemagni ⁇ ny ⁇ sl ⁇ ev 74, 75, of vy ⁇ lnenny ⁇
  • Other non-magnetic metals for example, platinum, or gold, or titanium, or molybdenum, or volfrum.
  • the specific electric capacity of the upper cylindrical layer is 74 metal in comparison with the larger specific electric unit of the lower part of the territory of 75
  • Half-words 67, 71 and 72 are made from slurry materials: Kazakh, or Kazakh, or ⁇ .
  • the operation of the Gann diode is the second embodiment of the invention.
  • the cylindrical structure of the Gunn diode 15 RELEASE THE LARGER OPERATING CURRENTS THAT PROVIDE A HIGH GENERATED RISK OF CAPACITY AND PRESENT.
  • the Gunn diode shown in FIG. 8, contains the following constituent elements: the first degenerate second-division factor is greater than the second, longer than last 5, last 76 ⁇ a outer ⁇ ve ⁇ n ⁇ s ⁇ i sl ⁇ ya 76 ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ mi ⁇ vany having ⁇ -ShH-ind ⁇ iches ⁇ uyu ⁇ mu a ⁇ givny ⁇ lu ⁇ v ⁇ dni ⁇ vgy ⁇ ⁇ i ⁇ a sl ⁇ y 77 v ⁇ y vy ⁇ zhdenny m ⁇ n ⁇ is ⁇ - ⁇ lliches ⁇ y shlu ⁇ v ⁇ dni ⁇ vy ⁇ + ⁇ i ⁇ a sl ⁇ y 78.
  • P ⁇ ve ⁇ sl ⁇ ya 78 applied me ⁇ alliches ⁇ y ⁇ n ⁇ a ⁇ 79 an ⁇ da as dvu ⁇ tsilind ⁇ iches ⁇ i ⁇ nemagni ⁇ ny ⁇ w sl ⁇ ev 80 81, made from various non-magnetic metals, for example, platinum, or gold, or titanium, or molybdenum, or volfrum.
  • the specific electric power of the upper layer is 83 metal in a couple of specific
  • Semi-final layers 76, 77 and 78 are made from sludge materials: ⁇ , or ⁇ réelle ⁇ , or ⁇ .
  • P ⁇ s ⁇ yann ⁇ e na ⁇ yazhenie ⁇ i ⁇ ladshae ⁇ sya ⁇ n ⁇ a ⁇ ami between 79 and 82.
  • the cylindrical structure of the Gunn diode makes it possible to start working more efficiently, which ensures a higher generation rate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)

Abstract

L'invention concerne le domaine de l'électronique, notamment la conception et la production de dispositifs semi-conducteurs non plans possédant une région fermée de charge spatiale et pouvant être utilisés dans l'industrie électronique dans des circuits d'amplification, génération et transformation d'oscillations électromagnétiques et autres types d'oscillations. Selon cette invention, il est possible de produire des dispositifs semi-conducteurs d'une plus haute fiabilité à des valeurs nominales de courants et de tensions utiles, d'éliminer les effets de bord et de réduire également le niveau de dégradation électrothermique et thermomagnétique. La formation d'une région fermée de charge spatiale s'avère, par conséquent, utile dans les dispositifs semi-conducteurs non plans tels que transistors bipolaires, thyristors, diodes à avalanche, diodes à effet Gunn et des variantes de ceux-ci.
PCT/RU2001/000409 2000-10-11 2001-10-11 Dispositifs semi-conducteurs non plans possedant une region fermee de charge spatiale WO2002031884A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001296104A AU2001296104A1 (en) 2000-10-11 2001-10-11 Nonplanar semiconductor devices having closed region of spatial charge

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
RU2000125498 2000-10-11
RU2000125500/28A RU2173916C1 (ru) 2000-10-11 2000-10-11 Биполярный транзистор
RU2000125500 2000-10-11
RU2000125498/28A RU2173917C1 (ru) 2000-10-11 2000-10-11 Тиристор
RU2000129626/28A RU2168801C1 (ru) 2000-11-28 2000-11-28 Диод ганна (варианты)
RU2000129625/28A RU2168800C1 (ru) 2000-11-28 2000-11-28 Лавинно-пролетный диод (варианты)
RU2000129626 2000-11-28
RU2000129625 2000-11-28

Publications (1)

Publication Number Publication Date
WO2002031884A1 true WO2002031884A1 (fr) 2002-04-18

Family

ID=27484462

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2001/000409 WO2002031884A1 (fr) 2000-10-11 2001-10-11 Dispositifs semi-conducteurs non plans possedant une region fermee de charge spatiale

Country Status (2)

Country Link
AU (1) AU2001296104A1 (fr)
WO (1) WO2002031884A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
RU2024109C1 (ru) * 1991-02-20 1994-11-30 Всероссийский электротехнический институт им.В.И.Ленина Мощный полупроводниковый прибор
RU2054213C1 (ru) * 1993-02-24 1996-02-10 Василий Иванович Каневский Полупроводниковый прибор на эффекте ганна
US5512776A (en) * 1984-07-13 1996-04-30 Texas Instruments Incorporated Interdigitated IMPATT devices
SU1827144A3 (ru) * 1991-05-07 1996-06-27 Товарищество с ограниченной ответственностью "КМК" Вертикальный биполярный транзистор
SU1414238A1 (ru) * 1986-04-16 1997-06-10 А.Ф. Монахов Полупроводниковый прибор
RU2086051C1 (ru) * 1995-06-26 1997-07-27 Василий Иванович Каневский Высокочастотный прибор на эффекте ганна

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor
US5512776A (en) * 1984-07-13 1996-04-30 Texas Instruments Incorporated Interdigitated IMPATT devices
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
SU1414238A1 (ru) * 1986-04-16 1997-06-10 А.Ф. Монахов Полупроводниковый прибор
RU2024109C1 (ru) * 1991-02-20 1994-11-30 Всероссийский электротехнический институт им.В.И.Ленина Мощный полупроводниковый прибор
SU1827144A3 (ru) * 1991-05-07 1996-06-27 Товарищество с ограниченной ответственностью "КМК" Вертикальный биполярный транзистор
RU2054213C1 (ru) * 1993-02-24 1996-02-10 Василий Иванович Каневский Полупроводниковый прибор на эффекте ганна
RU2086051C1 (ru) * 1995-06-26 1997-07-27 Василий Иванович Каневский Высокочастотный прибор на эффекте ганна

Also Published As

Publication number Publication date
AU2001296104A1 (en) 2002-04-22

Similar Documents

Publication Publication Date Title
US3173032A (en) Means for close placement of electrode plates in a thermionic converter
US4251679A (en) Electromagnetic radiation transducer
US8866152B2 (en) Betavoltaic apparatus and method
US3714474A (en) Electron-voltaic effect device
KR102544103B1 (ko) 전기 발전기 시스템
US8760846B1 (en) Apparatus and method for capacitors having engineered electrodes with very high energy density
US20060204795A1 (en) Energy storage device charging system
US3270293A (en) Two terminal semiconductor high frequency oscillator
US3019358A (en) Radioative battery with chemically dissimilar electrodes
CN101645317B (zh) 一种碳纳米管同位素电池
KR102120273B1 (ko) 열전 모듈 및 열전 발전장치
WO2002031884A1 (fr) Dispositifs semi-conducteurs non plans possedant une region fermee de charge spatiale
WO1997048105A1 (fr) Batterie alimentee par des particules chargees
Duggirala et al. 3D silicon betavoltaics microfabricated using a self-aligned process for 5 milliwatt/cc average, 5 year lifetime microbatteries
JP6720413B2 (ja) ベータボルタ電池
US3824448A (en) Contact potential generator system
US4024410A (en) Alternating current energy converter
CN108053911B (zh) 辐射电离-离子渗透复合式同位素电池及其制备方法
RU2641100C1 (ru) Компактный бетавольтаический источник тока длительного пользования с бета-эмиттером на базе радиоизотопа 63 Ni и способ его получения
US3802924A (en) Thin solar cell with rim and metal contact on reverse face
WO2019218163A1 (fr) Batterie dynamique à isotope à base de métal liquide
US20010045624A1 (en) High-voltage silicon diode
TWI851410B (zh) 熱電偶發電單元、元件及裝置
WO2003085749A1 (fr) Dispositif de conversion d'energie thermique environnementale en electricite a courant continu
RU2110130C1 (ru) Способ накопления электрической энергии и устройство для его осуществления

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP