WO2002029901A1 - Transistor a fil mince, dispositif d'affichage a cristaux liquides comprenant ledit fil, et dispositif d'affichage electroluminescent - Google Patents

Transistor a fil mince, dispositif d'affichage a cristaux liquides comprenant ledit fil, et dispositif d'affichage electroluminescent Download PDF

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Publication number
WO2002029901A1
WO2002029901A1 PCT/JP2001/007459 JP0107459W WO0229901A1 WO 2002029901 A1 WO2002029901 A1 WO 2002029901A1 JP 0107459 W JP0107459 W JP 0107459W WO 0229901 A1 WO0229901 A1 WO 0229901A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
thin film
film transistor
liquid crystal
insulation film
Prior art date
Application number
PCT/JP2001/007459
Other languages
English (en)
Japanese (ja)
Inventor
Kazuki Kitamura
Tetsuo Kawakita
Hiroshi Sano
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO2002029901A1 publication Critical patent/WO2002029901A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un transistor à fil mince comprenant un substrat (11), un film (12) de sous-couche formé sur ledit substrat (11), un film semi-conducteur (14) à base de silicium (32) possédant une région de source (32), une région de canal (61), et une région de drain (33) formées sur le film d'isolation (12) de sous-couche, un film d'isolation (16) de grille adjacent à la région de canal (61) du film semi-conducteur (14), et une électrode de grille (31) filmogène adjacente au film d'isolation (16) de grille. La somme des contraintes intérieures de l'électrode de grille (31) et du film d'isolation 16 (16) de grille est une composante de traction.
PCT/JP2001/007459 2000-09-29 2001-08-30 Transistor a fil mince, dispositif d'affichage a cristaux liquides comprenant ledit fil, et dispositif d'affichage electroluminescent WO2002029901A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-300065 2000-09-29
JP2000300065 2000-09-29

Publications (1)

Publication Number Publication Date
WO2002029901A1 true WO2002029901A1 (fr) 2002-04-11

Family

ID=18781789

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/007459 WO2002029901A1 (fr) 2000-09-29 2001-08-30 Transistor a fil mince, dispositif d'affichage a cristaux liquides comprenant ledit fil, et dispositif d'affichage electroluminescent

Country Status (2)

Country Link
TW (1) TW503584B (fr)
WO (1) WO2002029901A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129286A (ja) * 1991-11-07 1993-05-25 Casio Comput Co Ltd 窒化シリコン膜
JPH07115203A (ja) * 1993-10-20 1995-05-02 Matsushita Electric Ind Co Ltd 薄膜および薄膜の製造方法およびそれを用いた薄膜トランジスタ
JPH09283518A (ja) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5815223A (en) * 1994-06-20 1998-09-29 Canon Kabushiki Kaisha Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
JP2000200763A (ja) * 1998-12-29 2000-07-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129286A (ja) * 1991-11-07 1993-05-25 Casio Comput Co Ltd 窒化シリコン膜
JPH07115203A (ja) * 1993-10-20 1995-05-02 Matsushita Electric Ind Co Ltd 薄膜および薄膜の製造方法およびそれを用いた薄膜トランジスタ
US5815223A (en) * 1994-06-20 1998-09-29 Canon Kabushiki Kaisha Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
JPH09283518A (ja) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000200763A (ja) * 1998-12-29 2000-07-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
TW503584B (en) 2002-09-21

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