WO2002027789B1 - Connecting device - Google Patents

Connecting device

Info

Publication number
WO2002027789B1
WO2002027789B1 PCT/DE2001/003439 DE0103439W WO0227789B1 WO 2002027789 B1 WO2002027789 B1 WO 2002027789B1 DE 0103439 W DE0103439 W DE 0103439W WO 0227789 B1 WO0227789 B1 WO 0227789B1
Authority
WO
WIPO (PCT)
Prior art keywords
area
circuit unit
region
contact device
connection
Prior art date
Application number
PCT/DE2001/003439
Other languages
German (de)
French (fr)
Other versions
WO2002027789A1 (en
Inventor
Robert Bergmann
Joost Larik
Ralf Otremba
Xaver Schloegel
Juergen Schredl
Original Assignee
Infineon Technologies Ag
Robert Bergmann
Joost Larik
Ralf Otremba
Xaver Schloegel
Juergen Schredl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10124141A external-priority patent/DE10124141B4/en
Application filed by Infineon Technologies Ag, Robert Bergmann, Joost Larik, Ralf Otremba, Xaver Schloegel, Juergen Schredl filed Critical Infineon Technologies Ag
Priority to EP01971698A priority Critical patent/EP1320889A1/en
Publication of WO2002027789A1 publication Critical patent/WO2002027789A1/en
Publication of WO2002027789B1 publication Critical patent/WO2002027789B1/en

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Classifications

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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Abstract

The aim of the invention is to take up the smallest amount of space possible while effecting the thermomechanical release in tension at the junction between a circuit unit (2) and contact device (4) of a circuit (1), said junction being provided by means of the connecting device (10). To this end, the connecting device (10) is essentially provided as a prefabricated metallic or alloy region in the area of the circuit unit (2) and in the area of the contact device (4) while avoiding, to the greatest possible extent, the use of adhesive elements and solder elements.

Claims

22GEÄNDERTE ANSPRÜCHE[beim Internationalen Büro am 23. April 2002 (23.04.02) eingegangen; ursprüngliche Ansprüche 1-16 durch geänderte Ansprüche 1-12 ersetzt (5 Seiten)] 22CHANGED CLAIMS [received at the International Bureau on April 23, 2002 (April 23, 2002); original claims 1-16 replaced by amended claims 1-12 (5 pages)]
1. Verbindungseinrichtung für eine Schaltungsanordnung, insbesondere für ein Halbleitermodul oder dergleichen, welche ausgebildet ist, mindestens eine Schaltungseinheit (2) , insbesondere einen Chip oder dergleichen, der Schaltungsanordnung (1) mit mindestens einer Kontakteinrichtung (4) der Schaltungsanordnung (1) mechanisch und/oder elektrisch zu verbinden und dabei die Schaltungseinheit (2) und die Kon- takteinrichtung (4) von thermomechanischen Belastungen zu entkoppeln,1. Connection device for a circuit arrangement, in particular for a semiconductor module or the like, which is designed to mechanically and at least one circuit unit (2), in particular a chip or the like, of the circuit arrangement (1) with at least one contact device (4) of the circuit arrangement (1) / or to connect electrically and to decouple the circuit unit (2) and the contact device (4) from thermomechanical loads,
- wobei die Verbindungseinrichtung (10) im Wesentlichen als- The connecting device (10) essentially as
- vorzugsweise vorgefertigter - metallischer oder Legierungsbereich zumindest teilweise im Bereich der Schaltungseinheit (2) und/oder im Bereich der Kontakteinrichtung (4) ausgebildet ist,- preferably prefabricated - metallic or alloy area is at least partially formed in the area of the circuit unit (2) and / or in the area of the contact device (4),
- wobei die Verbindungseinrichtung (10) einen Pufferbereich (12), einen Zwischenbereich (14) sowie einen Verbindungsbereich (16) aufweist, - wobei der Pufferbereich (12) Aluminium aufweist oder im Wesentlichen daraus gebildet ist,- The connecting device (10) has a buffer area (12), an intermediate area (14) and a connecting area (16), - wherein the buffer area (12) has aluminum or is essentially formed from it,
- wobei der Verbindungsbereich (16) einen ersten Bereich (16- 1) aufweist, welcher Silber und/oder Kupfer enthält oder im Wesentlichen daraus gebildet ist und welcher direkt mit der Kontakteinrichtung (4) verbunden ist,the connecting area (16) has a first area (16-1) which contains or essentially consists of silver and / or copper and which is connected directly to the contact device (4),
- wobei der Verbindungsbereich (16) einen zweiten Bereich (16-2) aufweist, welcher Gold und Zinn und/oder Silber und Zinn enthält oder im Wesentlichen daraus gebildet ist und welcher auf einer von der Kontakteinrichtung (4) abgewandten Seite angeordnet ist, vorzugsweise in Verbindung mit der- The connecting region (16) has a second region (16-2) which contains or essentially consists of gold and tin and / or silver and tin and which is arranged on a side facing away from the contact device (4), preferably in connection with the
Schaltungseinheit (2) , gegebenenfalls in direkter Verbindung mit einem Zwischenbereich (14) oder Pufferbereich (12),Circuit unit (2), possibly in direct connection with an intermediate area (14) or buffer area (12),
- wobei der Zwischenbereich (14) einen ersten Bereich (14-1) aufweist, welcher Silber und/oder Kupfer enthält oder im We- sentlichen daraus gebildet ist und welcher mit dem Verbindungsbereich (16) verbunden ist, und 23- The intermediate region (14) has a first region (14-1) which contains silver and / or copper or is essentially formed therefrom and which is connected to the connecting region (16), and 23
- wobei der Zwischenbereich (14) einen zweiten Bereich (14-2) aufweist, welcher Titan enthält oder im Wesentlichen daraus gebildet ist und welcher mit dem Pufferbereich (12) verbunden ist.- The intermediate region (14) has a second region (14-2) which contains titanium or is essentially formed therefrom and which is connected to the buffer region (12).
2. Verbindungseinrichtung für eine Schaltungsanordnung, insbesondere für ein Halbleitermodul oder dergleichen, welche ausgebildet ist, mindestens eine Schaltungseinheit (2), insbesondere einen Chip oder dergleichen, der Schaltungsanord- nung (1) mit mindestens einer Kontakteinrichtung (4) der Schaltungsanordnung (1) mechanisch und/oder elektrisch zu verbinden und dabei die Schaltungseinheit (2) und die Kontakteinrichtung (4) von thermomechanischen Belastungen zu entkoppeln, - wobei die Verbindungseinrichtung (10) im Wesentlichen als2. Connection device for a circuit arrangement, in particular for a semiconductor module or the like, which is formed, at least one circuit unit (2), in particular a chip or the like, of the circuit arrangement (1) with at least one contact device (4) of the circuit arrangement (1) to connect mechanically and / or electrically and to decouple the circuit unit (2) and the contact device (4) from thermomechanical loads, - the connecting device (10) essentially being
- vorzugsweise vorgefertigter - metallischer oder Legierungsbereich zumindest teilweise im Bereich der Schaltungseinheit- preferably prefabricated - metallic or alloy area at least partially in the area of the circuit unit
(2) und/oder im Bereich der Kontakteinrichtung (4) ausgebildet ist, - wobei die Verbindungseinrichtung (10) einen Pufferbereich (12), einen Zwischenbereich (14) sowie einen Verbindungsbereich (16) aufweist,(2) and / or in the area of the contact device (4), - the connecting device (10) having a buffer area (12), an intermediate area (14) and a connecting area (16),
- wobei der Pufferbereich (12) Aluminium aufweist oder im Wesentlichen daraus gebildet ist, - wobei der Verbindungsbereich (16) einen ersten Bereich (16- 1) aufweist, welcher Kupfer enthält oder im Wesentlichen daraus gebildet ist und welcher direkt mit der Kontakteinrichtung (4) verbunden ist,- wherein the buffer area (12) has aluminum or is essentially formed therefrom, - wherein the connecting area (16) has a first area (16-1) which contains or is essentially made of copper and which is directly connected to the contact device (4th ) connected is,
- wobei der Verbindungsbereich (16) einen zweiten Bereich (16-2) aufweist, welcher Zinn enthält oder im Wesentlichen daraus gebildet ist und welcher auf einer von der Kontakteinrichtung (4) abgewandten Seite angeordnet ist, vorzugsweise in Verbindung mit der Schaltungseinheit (2), gegebenenfalls in direkter Verbindung mit einem Zwischenbereich (14) oder Pufferbereich (12), 24- The connecting area (16) has a second area (16-2) which contains or essentially consists of tin and which is arranged on a side facing away from the contact device (4), preferably in connection with the circuit unit (2) , possibly in direct connection with an intermediate area (14) or buffer area (12), 24
- wobei der Zwischenbereich (14) einen ersten Bereich (14-1) aufweist, welcher Kupfer enthält oder im Wesentlichen daraus gebildet ist und welcher im Betrieb mit dem Verbindungsbereich (16) verbunden ist, und - wobei der Zwischenbereich (14) einen zweiten Bereich (14-2) aufweist, welcher Titan enthält oder im Wesentlichen daraus gebildet ist und welcher mit dem Pufferbereich (12) verbunden ist.- The intermediate region (14) has a first region (14-1) which contains or is essentially formed from copper and which is connected to the connecting region (16) during operation, and - wherein the intermediate region (14) has a second region (14-2) which contains or is essentially formed from titanium and which is connected to the buffer region (12).
3. Verbindungseinrichtung nach einem der vorangehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Pufferbereich (12) in Form einer Schicht vorgesehen ist.3. Connecting device according to one of the preceding claims, that the buffer area (12) is provided in the form of a layer.
4. Verbindungseinrichtung nach einem der vorhergehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Pufferbereich (12) zumindest mit einem Oberflächen- bereich (12a) davon als im Wesentlichen integraler Bestandteil, insbesondere als Schicht, in einem Bereich der bestehenden Struktur der Schaltungseinheit (2) und/oder der Kontakteinrichtung (4) ausgebildet ist.4. Connection device according to one of the preceding claims, characterized in that the buffer area (12) at least with a surface area (12a) thereof as an essentially integral component, in particular as a layer, in an area of the existing structure of the circuit unit (2) and / or the contact device (4) is formed.
5. Verbindungseinrichtung nach einem der vorangehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Verbindungsbereich (16) in Form einer Schicht vorgesehen ist.5. Connecting device according to one of the preceding claims, d a d u r c h g e k e n n e e c h n e t that the connection region (16) is provided in the form of a layer.
6. Verbindungseinrichtung nach einem der vorangehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Verbindungsbereich (16) zumindest mit einem Oberflä- chenbereich (16b) davon als im Wesentlichen integraler Bestandteil, insbesondere als Schicht, in einem Bereich der be- 256. Connection device according to one of the preceding claims, characterized in that the connection area (16) at least with a surface area (16b) thereof as an essentially integral component, in particular as a layer, in an area of the 25
stehenden Struktur der Kontakteinrichtung (4) und/oder der Schaltungseinheit (2) ausgebildet ist.standing structure of the contact device (4) and / or the circuit unit (2) is formed.
7. Verbindungseinrichtung nach einem der vorangehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Pufferbereich (12) und der Verbindungsbereich (16) mit jeweils einem Oberflächenbereich (12b, 16a) davon direkt verbunden sind.7. Connection device according to one of the preceding claims, that the buffer area (12) and the connection area (16) are each directly connected to a surface area (12b, 16a) thereof.
8. Verbindungseinrichtung nach einem der vorangehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Pufferbereich (12) und der Verbindungsbereich (16) über den vorgesehenen Zwischenbereich (14) , insbesondere über eine Zwischenschicht, miteinander mechanisch und/oder elektrisch verbunden sind.8. Connecting device according to one of the preceding claims, that the buffer area (12) and the connecting area (16) are mechanically and / or electrically connected to one another via the provided intermediate area (14), in particular via an intermediate layer.
9. Verbindungseinrichtung nach einem der vorangehenden An- sprüche, d a d u r c h g e k e n n z e i c h n e t , dass der Pufferbereich (12), der Zwischenbereich (14) und/oder der Verbindungsbereich (16) Schichtförmig ausgebildet sind und/oder eine Mehrzahl metallischer und/oder Legie- rungsschichten aufweisen, so dass im Betrieb im Übergang von der Schaltungseinheit (2) zur Kontakteinrichtung (4) hin ein im Wesentlichen schichtförmiger Verlauf vorliegt.9. Connecting device according to one of the preceding claims, characterized in that the buffer area (12), the intermediate area (14) and / or the connecting area (16) are formed in layers and / or have a plurality of metallic and / or alloy layers, so that during operation in the transition from the circuit unit (2) to the contact device (4) there is an essentially layer-like course.
10. Verbindungseinrichtung nach einem der vorangehenden An- sprüche, d a d u r c h g e k e n n z e i c h n e t , dass zumindest ein Teil des Verbindungsbereichs (16) , insbesondere der erste Bereich (16-1) davon, als Teil der Kontakteinrichtung (4), insbesondere des Leadfra es, und/oder als integraler Bestandteil davon ausgebildet ist. 2610. Connection device according to one of the preceding claims, characterized in that at least part of the connection area (16), in particular the first area (16-1) thereof, as part of the contact device (4), in particular the leadframe, and / or is formed as an integral part of it. 26
11. Verwendung einer Verbindungseinrichtung nach einem der Ansprüche 1 bis 10 in einer Schaltungsanordnung, insbesondere in einem Halbleitermodul oder dergleichen, zur mechanischen und/oder elektrischen Verbindung einer Schaltungseinheit (2) , insbesondere eines Chips oder dergleichen mit mindestens einer Kontakteinrichtung (4) .11. Use of a connecting device according to one of claims 1 to 10 in a circuit arrangement, in particular in a semiconductor module or the like, for mechanical and / or electrical connection of a circuit unit (2), in particular a chip or the like, with at least one contact device (4).
12. Schaltungsanordnung, insbesondere Halbleitermodul oder dergleichen, mit mindestens einer Schaltungseinheit (2), insbesondere einem Chip oder dergleichen, und mit mindestens einer Kontakteinrichtung (4) zur Kontaktierung der Schaltungseinheit (2), d a d u r c h g e k e n n z e i c h n e t , dass zur mechanischen und/oder elektrischen Verbindung der12.Circuit arrangement, in particular semiconductor module or the like, with at least one circuit unit (2), in particular a chip or the like, and with at least one contact device (4) for contacting the circuit unit (2), so that the mechanical and / or electrical connection of the
Schaltungseinheit (2) mit der Kontakteinrichtung (4) mindestens eine Verbindungseinrichtung (10) nach einem der Ansprüche 1 bis 10 vorgesehen ist. Circuit unit (2) with the contact device (4) at least one connecting device (10) according to one of claims 1 to 10 is provided.
PCT/DE2001/003439 2000-09-29 2001-09-10 Connecting device WO2002027789A1 (en)

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DE10048426.3 2000-09-29
DE10048426 2000-09-29
DE10124141.0 2001-05-17
DE10124141A DE10124141B4 (en) 2000-09-29 2001-05-17 Connecting device for an electronic circuit arrangement and circuit arrangement

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DE10221857A1 (en) 2002-05-16 2003-11-27 Osram Opto Semiconductors Gmbh Process for applying a semiconductor chip on a thermal and/or electrically conducting connecting part arranged in or on a plastic housing body comprises using a soft soldering process
DE102005024430B4 (en) * 2005-05-24 2009-08-06 Infineon Technologies Ag Process for coating a silicon wafer or silicon chip
US8211752B2 (en) * 2007-11-26 2012-07-03 Infineon Technologies Ag Device and method including a soldering process
US9490193B2 (en) 2011-12-01 2016-11-08 Infineon Technologies Ag Electronic device with multi-layer contact

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JPS6079732A (en) * 1983-10-07 1985-05-07 Hitachi Ltd Semiconductor device
US4772935A (en) * 1984-12-19 1988-09-20 Fairchild Semiconductor Corporation Die bonding process
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
DD271595A1 (en) * 1988-04-26 1989-09-06 Seghers A Mikroelektronik Veb REAR PANEL METALLIZATION OF SI SEMICONDUCTOR ELEMENTS
DE3823347A1 (en) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Power semiconductor element
JP2716355B2 (en) * 1993-11-25 1998-02-18 日本電気株式会社 Method for manufacturing semiconductor device
JPH08115928A (en) * 1994-10-17 1996-05-07 Hitachi Ltd Semiconductor device, and its manufacture
US5559817A (en) * 1994-11-23 1996-09-24 Lucent Technologies Inc. Complaint layer metallization
DE19606101A1 (en) * 1996-02-19 1997-08-21 Siemens Ag Semiconductor body with solder material layer

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