EP1320889A1

EP1320889A1 - Connecting device

Info

Publication number: EP1320889A1
Application number: EP01971698A
Authority: EP
Inventors: Robert Bergmann; Joost Larik; Ralf Otremba; Xaver Schloegel; Juergen Schredl
Original assignee: Infineon Technologies AG
Current assignee: Infineon Technologies AG
Priority date: 2000-09-29
Filing date: 2001-09-10
Publication date: 2003-06-25
Also published as: WO2002027789B1; WO2002027789A1

Abstract

The aim of the invention is to take up the smallest amount of space possible while effecting the thermomechanical release in tension at the junction between a circuit unit (2) and contact device (4) of a circuit (1), said junction being provided by means of the connecting device (10). To this end, the connecting device (10) is essentially provided as a prefabricated metallic or alloy region in the area of the circuit unit (2) and in the area of the contact device (4) while avoiding, to the greatest possible extent, the use of adhesive elements and solder elements.

Description

cυ cυ M [-υ P ¹ P ¹

Cπ o cπ o Lπ o cπ

Cd r + ^ P Φ CΛ α 3 <N α α Φ ω <: Vi 3 rt Cd Cd d <! Cd P ¹ O ö <: Cd

Φ Φ P- P- Ω Φ Φ Φ 33 φ Φ P- Φ Φ Ω Φ Ω Φ SD φ φ 3 φ φ 3 N3 tr P- Φ Φ r P Φ Ω 3 3 '3 Ω P P- 3 rt 3 P 3 t P 3 "Ω K p- P- P P- cn Φ Φ P ω

P ω σ "φ Φ 3- tr ω Φ φ Φ ω P- tr rt ω ω \ ω 3 13 ω P tr Ω

P- o Φ rt 3 3? SU P- Ω 3 Φ P- 3 13 Φ SD Φ 13 13 o Ω P o tr td P- 3 '

Φ 3 "tr do 3 3 3 ^J rt φ o 3 3 SD 3 P- P- P-"> ds: Φ P 3 P tr P- Φ 3 ω φ 3 P- α Φ ω P Ω rt Cd 3 P- 3 φ φ φ p- d Ω P- iQ Po α Φ

Φ P ιQ O P- 3 Cfl d 3 13 α 3 "ω m SD 3 P- ω P" P φ Po 3 "φ P p- d P- rt Φ iQ 3 rt Ω 3 P Φ SD 13 P- dd Ω Ω P- α tr ω P- 3 3 tr

Φ P- SD φ Φ Φ - uq Φ 3 P ¹ P 3 Φ 3 3 ¹ tr Ω <! P φ Φ SD φ Hi α ^ d

P- P- Ω 3 3 3 3 Φ CΛ Φ Ω rt Φ o ^* sQ Φ Φ tr O: 3 d P ¹ P- Hi d CΛ 3

P ¹ o 3- SD 3 φ 3 ^* ? Rd Ω P ¹ Φ Φ P 3 rt 3 P φ SD co 3 3 Φ sQ s: tr Φ 3 N p- Φ SD 3 3 ^J P- 3 3 d VP <! • Φ α iQ P-

Φ φ 3 d to to 3 CΛ 3 3 ιQ Φ Ω φ ≤3 td 3 O α rt rt o Φ 3

P- 3 o 3 rt φ Φ P Ω 3 ω 3? 3 C SD: P- ιQ tr P- P P- 3 CΛ ω tr P ω α Φ? P- P "P- 3 ^J • Φ rt Φ P ιQ Φ P- Φ P- sQ Ω Φ P- φ> Φ! _ 3 o SD Ω SD X P- φ SD Φ P 3 Φ 3 13 ω Φ CΛ 3 "rt Ω

0 P> O 3 ffi CΛ 3 ^" P ¹ d 3 3 d Φ 3 CΛ« Ω Ω SD 3 P 3 "

JD co 3 t " ¹ rt SD rt rt rt PP Hl O α SD ω NO 3 ^J s tr ω P- rt di → rt Φ a> ddd P- ω P- d Ω do 3 φ SD SD rt 13 Hi d ω Φ o-. SD SU \ er 3 3 3 ro Ω Ω φ φ ω tr • rt 3 rt d P Po 3

LQ 3 "rt ^ T rt _- ^■ ιQ iQ £! 3 3 ^J 3 ^J P- P SD Φ SD Φ rt 3 d rt iQ

Φ 3 d rt Po P- Φ Φ Φ ω rt SD Φ co Hi> P Ϊ ^ P d ιQ Ω ιQ X 3 1 P Φ P- 3 3 φ σ d P ^J α Ω ^" rt d rt o P- 3 ω 3 ^J Φ

P iQ SD P rt p- Φ 3 rt Φ - 3 Φ Po P- 3! D iQ 0 ⁾ o P-

P- ιQ Φ O 3 Φ Φ N <3 P- tQ d Φ P SD d 3 IQ Φ φ rt P * ω 3 3

Ω Φ 3 α φ 3 P do ^* 3 P ιQ P ¹ 3 "PPP SD P-SD O Φ

3 ^{^} 3 φ 3 3 P Φ σ 3 ιQ P ¹ P "rt d iQ df Φ 3 P

Φ <P o Φ o P- iQ P- Φ d co CD: φ d ω P- 3 3 rt 3 O α <

3 σ O α 3 3 Φ rt? P SD ω P- 3 3 Φ tQ P 3 Φ

P d Φ CΛ Φ SD 3 ω Ω ιQ O ω P- N 3 d Φ P s: P- Q Φ PO Φ φ 3 3 3 OP ¹ tr ω Φ tr Ω <id P- 3 3 P tr

Φ Φ P Φ CΛ ¹ 3 P- P P- φ φ Hl φ Φ ^* o rt d ιQ Φ P-

P rt 0) d: Φ Φ 3 rt Φ d rt rt Ω 3 P- Hi ω P Φ 3 er Φ 3 3 3 ty Φ 3 ^* P- P 3 3 Φ 3 ^* 3 P- O 3 P P- iQ ιQ α tr P 3 NN _^ 3 P ¹ d? T SD tr N 3 d "> CΛ P- 3 Φ Φ <d

3 P Φ d Φ N d d P- 3 Φ d Φ P- α 3 Ω 3 SD 3 3 Φ 3

3 3 3 P d 3 3 CΛ 3 iQ p- Po P- Φ φ rr 3 tr ιQ 3 SD: P Q

; r P- ιQ d Φ Ω P- Φ rt r rt 3 P Φ p- SD Φ P- &> s: CΛ

O: ω ω SD tr to t-3 P 3 iT rt 3 P rt φ P rt l- ¹ 3 Φ Ui Φ φ

3 Ω CΛ 3 Φ Φ Φ Ω SD P- d Φ tr Φ Cfl rt • P rt 3 P-

3 3 ¹ d rt Hl p- P- tr _ ^ φ Po 3 rt P- 3 SD Ω Φ d Φ 3

Φ φ P Φ Φ Φ CΛ O rt P = Φ _^ d 3 ^J 3 3 σ P- Φ 3 d P

3 3 Ω P ¹ P CΛ 13 s: 3 d rt 3 "3 Po P- rt tQ p-

• 3 ω 3 P-

3 ^J P ¹ Φ rt P- SD Φ rt 3 Φ P * «« Φ K ιQ Φ ω ω Φ O sQ Ω

Cd Φ 3 P- Φ d P ¹ SD U3 P rt P- 3 O: P α 13 φ ω 3 O σ tr

Φ s: 3 iQ Hi Ω? ω Φ s: α 3 d P P- φ Hl Φ IQ rt

H Φ D Φ iQ 3- rt SD ^ 3 d SD Φ 3 3 P- Φ 3 rt Ω rt P Φ d

SD H Φ P- 3 ≤ Φ Φ Φ 3 3 t-ι ω 3 Φ Ω Ω tr P tr tr

CΛ 3 3

Ω 3 φ α Φ Hi P- O SD: Φ 3 3 "3 'Φ P- SD 3 Φ SD: iQ r 3 ^* rt tr Φ P SD 3 P Ω σ N Φ Φ Φ P- Hi 3 O ιQ P d Φ CΛ o 3 3 P- P 3 ^" s: Φ d P- P- 3 3 3 rt Po P- rt P ιQ

3 13 3 Φ IQ Φ P- 3 Φ 0 3 Φ 3 rt φ rt ω ≤ P- Φ iQ P O 3 Φ Ω d ω 3 K φ rt Φ 3 Ω Po 3 3

Φ P- Φ Φ 3- 3 rr ^ 3 <d α SD rt Cd P r 3 N 3 ^* 3 Hi ω SD:

3 Φ Ω P- P- N 3 "rt vQ Φ P SD Ω P φ 1 Φ d φ α 13 CD" 3 13 S. s: Φ d Φ P Ω d "O rt P ^ N 3 3 P- P

P- d Φ 1 P- Φ P 3 3 3 ^* Φ rt 3 P 3 O ds Φ d α

3 3 3 d 1 P 3 U3 φ P Φ P- P- o 3 3 • _^ ω Ω φ 1 3 1 O Φ 3 P- 1 Φ 1 1 α 3 ^J 1 3 1 1 er 3

co o bo t P ¹ P ¹ cπ o Cπ o cπ o Cπ

φ N rt CΛ rt σ SD Po P σ t-d Φ <Φ o 3 ___- <vQ φ tr vQ SD I. T3 P tr σ

H- dd φ Ω Φ d P- Cπ d φ tr P- Φ P- P- P ¹ P- Φ P- φ SD (D p- Φ P ¹ d P φ P P-

3 3 P - P 3 Φ 3 P tr 3 CΛ Ω Φ SD: 3 P 3 PEP ⁾ Φ 3 1 Φ Ω Φ O 3 P- Φ

P <vQ SD iQ vQ tr VQ SD: α ^* Ω 3 "CΛ P α P- Φ P- tr tr 3 ω

P- Φ Λ P ¹ cn vQ N cn φ 3 d>rt> tr Φ 13 P- td Po Ω P tr Ω 1 d ^ vQ φ

Ω P Ω rt φ SD SD s: IQ P vQ 3 3 d d φ P- SD Ω P P 3 ^ N 3 '; v Φ Φ

3 ^* tr Φ 3 "d P- 3 rt Φ Po P- vQ CΛ 3 Po 3 rt 3 3 ^* Hl SD Φ cn ss fl Φ o rt P 3 <rt p- P SD 3 Ω O rt 3 P- vQ CΛ 13 vQ vQ SD 3 rt P- 3 3 Ω • S. P- P- rt od 3 H vQ tr P d l_v pj: 3 Φ iQ P SD dddd 3 φ * 3 ^{^} Φ 3 Φ o P- Φ P

3 Λ rt CΛ φ 3 σ> cP 3 Φ d Φ r P 3 3 3 p SD 1 ^ P- Φ P 3 vQ P- vQ Q Φ Ω d Φ 3 3 vQ Φ d 3 Ω P Φ s: D. vQ vQ do SD P ¹ o CΛ P CΛ d 3 Φ

3 3 "3 P- d cn 3 α SD: 3" Po SD Φ 3 d rt rt Φ tr ¹ CΛ 3 Φ 3 "rt SD vQ 3 3 vQ CΛ vQ 3 EP CΛ P- ≤ 3 Φ 3 SD iQ Φ Po d - o Ω vQ P Φ "d H cn tr P- vQ Φ Ω cn rt Φ 3 p- α P- 3 P 3 O: vQ Φ rt 3 ^* cn 3

Φ 3 rt SD Φ CΛ 3 ^* vQ Φ 3 P ¹ P 3 SD NH Φ vQ Hl PP cn P CΛ? CΛ

P d 3 P- rt SD: SD Φ P d SD Φ 3 d P- P- CΛ Φ O vQ rt P- Ω P ¹ s:

3 3 O rt P- i £ P P * 3 SD <vQ 3 d P vQ φ Φ 3 Φ cP O rt tr φ Φ

O α vQ P SD 3 Φ rt SD: 3 φ φ vQ tr Po Φ Φ vQ P Φ P- <Φ Φ Po rt P tr P-

3 (D CΛ α d CΛ d EP cn PP ¹ CΛ Φ Q XI P- tr rt vQ 3 3 Φ 3 P- Po P- d CΛ

Φ tr SD 3 P- CΛ tr <3 Φ 13 tr O: vQ p- φ o 3 Φ P ¹ tr P Ω Φ rt 3 Φ

Ω Φ 3 d 3 vQ Φ Φ vQ 3 P P- CΛ Φ Hi 3 Φ 3 φ ^ φ vQ ^ d 3 'SD rt vQ tr P- O 3 IΛ Φ CΛ P cn d: 3 rt 3 Φ SD r + P " P- P- o P- P cn P Φ P-

SD P vQ tr r o tr SD <Ω • SD: P- 3 J φ Ω 3 rt O: SD: s: Φ cn 3 o CΛ

3 α Φ P- 3 P- 3 Φ tr d P 3 VQ J cn 3 3 ^J rt " _^ E Ω φ 3 rt rt

P- P- 3 3 CΛ P ¹ 3 OP Φ 3 <Φ Φ rt P P-> Φ (D Φ - P- Φ P Φ Λ Φ d P- o Φ α P tr • v 0 3 P 3 Φ Φ rt d 3? NP Φ Λ g Φ P P-

Ω 3 rt 3 Φ P d α P- CΛ P P- P- 3 Po _^ rt d 3 Φ SD P- "3

3 ^" CΛ vQ α rt Φ 3 3 3 td Φ rt rt vQ ≤ 3 N ≤ iQ tr 3 CΛ Ω rt SD tr ¹ ω

Ω 3 Φ _^ vQ d P- P- Φ SD Φ P Hi Φ SD Φ Φ iQ O; v 3 ^* • rt O: O

P- 3- 3 P- P Po cn 3 d 3 3 P- rt P P- P * XX Po P Cd d vQ P ¹ rt P- rt Po

3 SD φ 3 Φ P- d = Φ vQ 3 Φ PP ¹ φ rt Ω SD: Ω Φ Po φ φ SD Φ Φ Φ ^ <d φ ts>

P ¹ Ω α 3 P P- vQ P- 3 "3 d Φ" Ω 3 ^" Φ P- P- n 3 P- P- Φ 3 P

≤ rt 3 'Φ Φ 3 CΛ cn Φ Ω SD 3 3 rt 3 ^* Φ N i * r Ω CΛ P- SD 3 P ¹ P SD vQ 3 φ d SD CΛ P- Cd Φ P P- Φ P 3 "Pi ? vQ d Φ P d rt tr 13 3 φ -> 3 d Λ 3 3 rt 3 Φ P- P- 3 P- Po rt rt Φ cn? 3 vQ P- P- 3 3 Φ Hi Φ 3

Φ vQ P- Φ φ rt 3 Ω α 3 P- d Φ 3 vQ O: v N P Φ P- rt - P S P- SD

3 cn CΛ 3 3 P 3 ^* P 3 3 3 Φ 3 ≤ P- d N φ Φ S SD Φ 3 Ω rt Φ Ω CΛ P- ffi rt o P- α vQ S! N 3 3 tr P- Φ 3 σ d Φ cn tr 3 Φ 3 ^*

P- tr O Φ SD d Φ Ω d Φ Φ SD: Φ Φ CΛ φ 3 Φ φ m 3 cn SD 3 rt

P- 3 φ ^* tr 3 vQ 3 "3 CΛ P- P- EP 3 P- Ω rt φ 3 P- 3 O: vQ tr P- Φ

Ω 3- d P- P- tr vQ φ rt vQ P- rt Ω Φ • 3- 3 "" _^ O: Cd 3 P- Hi Φ CΛ Φ vQ P- P-

3 ^* Φ 3 3 13 3 3 d CΛ 3 Φ 3- 3 3 Φ Φ rt φ Φ vQ Φ p- 3 φ 3

Φ P- Φ P- Φ Po CΛ 3 vQ P 3 O: 3 P φ P- P- 3 Φ SD φ 3 P-

3 rt \ PO 3 P- d: rt vQ Φ tr Φ vQ 3 P- vQ CΛ tr d φ <vQ o α rt H tu 3 Q P- 3 Φ H Φ o 3 rt 13 O ^ P- Po tr 3 d Φ *

N d! *! Φ Φ Φ 3 d SD: Φ α P P- P- 3 φ p- 3 ^{^} P " ¹ Φ rt 3 P d 3 Φ OP CΛ P Φ α 3 EP vQ Φ σ Ω 3 φ ≤ φ p- SD: α Φ P- cn vQ SD α P 3 rt 3 P- Φ Φ d 3 p- - Φ Ω <P- 13 Ω Φ P- 3 13 P ¹ φ rt L Φ O 3 α 3 3 3 CΛ P tr φ P tr 3 3 PN Φ ω

3 Φ SD Φ 3 Φ φ Φ <_ CΛ vQ s P- rt SD P φ O Φ • Φ Φ d P- rt P- P ¹ P Λ d P P- Φ rt Φ φ d CΛ 3 tr " _^ p- P d Ω ω Ω

? Φ Φ rt vQ CΛ 3 P SD 3 P 3 vQ Ω P- P- 3 Φ α Hi 3 ^" SD: ^" SD or Φ Φ Ω> φ ≤. 3 rT iQ Φ 3- Λ 3 P- Φ P P- <! t Φ rt cn

13 XI rt P- φ P- o 3 ^J 3 Φ 3 cn P SD Ω α 3 3 P- Φ Φ P 3 NN

13 o P 3 P- 3 SD CΛ φ 3 Φ SD Φ P- ¹ tr Φ cn P p- H d

Φ 3 P- P Ω Φ Φ 13 P P P- 3 rt Φ 3 α = Φ Φ 1 3 φ P- d rt CΛ P- tr P 1 P Po d Φ Φ 3 vQ d 3 vQ tr P <! vQ Ω SD St.

3! D Ω Ω φ: P- 3 P Φ 3 1 Φ 3 CΛ Φ 1 o XI φ 3 ^* 3 1 ^{• *} 3 '3 ^* 3 Ω 3 vΩ P 3 vQ 1 P 3 3 Φ α rt 1 "tr 1 1 cn (Φ 3 Φ 1 φ 1 1 1

and to relieve or decouple from thermomechanical loads.

The connecting device according to the invention is characterized in that the connecting device is essentially designed as a - preferably prefabricated - metallic or alloy area at least partially in the area of the circuit unit and / or in the area of the contact device while largely avoiding adhesive elements and solder elements.

It is therefore a basic idea of the connecting device according to the invention to provide a metallic or alloy area instead of gluing or soldering. In contrast to the prior art, this measure avoids adhesive yards or soldering yards, and space is thus saved according to the invention. Furthermore, metallic or alloy areas are particularly suitable for absorbing thermomechanical tensions between a circuit unit and a contact device to be contacted, because favorable thermomechanical or thermal expansion properties can be achieved through an appropriately selected composition - especially in the context of a prefabrication process. Furthermore, a metallization or alloying process is easier to integrate in terms of production technology than gluing or soldering.

In a preferred embodiment of the connecting device according to the invention, at least one buffer area, in particular in the form of a layer, is provided. This is designed so that the thermomechanical tensions between the circuit unit and the contact device can be absorbed during operation. Thus, a thermo-mechanical decoupling, and discharge is generated between the circuit unit and the contacts in the circuit arrangement ^¬ direction realized by the vorgese ^¬ Henen buffer area. co o to N> P ¹ P ¹ cπ o cπ O cπ o Cπ

φ Q rt tr o tr N SD tr SD H tr d CΛ O (Λ φ P- tr Cd N P α s: Φ N s: 3 "P- ω rt td

P- P d φ o Φ d Φ d 3 Φ 3 Ω Φ Ω P- 3 P- Φ Φ P- Φ pj: P- s: P- Φ 3 φ P CΛ

3 d 3 Φ Φ P tr P ¹ Po P- Ω cn P- 3 ^* P 3 ^" 3 3 P- cn Ω CΛ 3- 3 P- P P- 3 P- p 3 vQ 3 P tr Φ 3 vQ 3 ' tr rt ^• ^ φ SD φ ^ d CΛ tr P Φ CΛ Q, rt Φ rt Φ P-

P- P- Φ P Φ Φ o 3 <P ¹ or * rt * υ - ¹ P Ω P- tr cn

Ω CΛ C = CΛ 3 ^ d 3 d 3 cn Φ Φ rt 3 P 3 P- α dd Φ cn tr φ d 3 P- rt tr SD: tr Ω 3 Φ O P- Φ Cd P d φ 3 vQ 3 d 3 Po P- Φ Φ P- 3 φ Ω N et rt Φ 3 'd Φ Cd CΛ 3 3 P Φ tr 3 Ω CΛ Φ P vQ Po cn P- 3 3 sα 3 3- ds: d NP P- 3 φ Φ Hl P- vQ tr φ φ P Ω Φ rt rt \ Φ 3 Φ

3 vQ Ω vQ P- P- P <Φ P Φ Φ 3 cn SD P- P- 3 ^{^} P- P Φ cn tr o co 3 p- P- Q P- SD 3 "ω σ Φ Φ Φ φ P cn P ¹ CΛ Φ 3 3 3 ≤ vQ 3 tr rt Φ Φ α Φ 3 rt

Ω 3 rt φ P- cn P P- P Φ Φ Φ rt d P- P- φ P φ Φ Φ • d P cn Φ P P- α Φ

SD 3 'vQ Φ P- H φ Ω tr P-? P- 3 3 CΛ P P- P- Po φ P 3 o P φ 3 Φ P d 3 3 P- 3 "P- rf rt vQ vQ 3- Ω Ω rt d = P- Φ α Λ 3 P- rt ω 3- cn P- NP et Cd SD Φ 3 d cn P Φ ω Φ ^{^} CΛ tr Φ tr 3 P- Φ Ω i Ω Φ rt P- cn s: CΛ P- SD: Φ 3 P P- 3 tr P- φ Ω et PP φ Ω cn 3 "Φ Φ 3- vQ 3

Φ et P- Ω Ω et P 3 d d Ω d ω CΛ Φ rt 3 "d Φ rt 3 tr φ SD P P P 3

P- CΛ 3 "3" φ 3 3 3 "3 Ω P d P- 3 3 CΛ P cn SD p- <1

3 Φ Ω SD rt tr P- vQ α iQ α 3 ^* d Φ d 3 Ω vQ ≤ N Φ rt ^ Φ ¹ rt O φ CΛ 3 Hl d Φ Ω Φ CΛ Φ 3 P- 3 tr φ d P- P- <do P Φ P

3 Φ Po 3 P- tr ω P- tr SD Q- 3 Ω ^ _^ rt P- d PP 3 rt φ 3 d = 3 P Φ rt

SD 3 rt vQ φ rt 3 "Φ cn Φ _\ 3- o ^ CΛ cn Φ P vQ 3 rt tr P- Φ

Φ tr α Φ P P P <o α rt Po φ P tr ω 3 SD A) CO 3 P-

P- Φ CΛ 3 Φ Φ tr P- Φ Φ <Φ α d = φ Φ <ld = 3 d P- Φ P- φ φ P cn Φ Φ P ¹

3 P Ω P- P P p- vQ 3 P- o? ^ P Φ tr P P o Φ 3- • rt Φ 3 3 P- P rt rt CΛ 3 t

N 3 ^' et vQ Φ Ω PO tr P Φ P P- P o 3 Φ Φ rt SD p- SD SD 3 "P-> PT! 3" cn 3 P- P t Φ vQ 3 d 3 tΛ T d 3 ^" P- - SD O Hl vQ d P ¹ P- tr d Φ rt d cn Φ rt 3 m 3 o P ¹ Φ 3 SD Ω SD 3 Φ P- 3 φ 3 σ rt φ Ω rr 3 et CΛ 3 Φ 3 tr ! D SD P- 3 Φ CΛ <vQ rt t 3 vQ P- 3 P 3 ω P- SD α Φ *

3 tr d • vQ Q. 3. S. Φ? d 9 rt; r φ Φ 3 cn rt 3 P- α rt P

3 Φ Φ Φ et p- 3 rt 3 rt 3 SD rt tr P Hl o P ¹ Φ P- Ω Φ Φ Hl ≤ ^

S α vQ P- td ω 3 S P- P Φ vQ φ rt rT P φ tr o 3 rt Φ P- O vQ 3 ^* 3 P- Φ

SD Φ ω 3 P- rt SD O CΛ P- P rt p- 3 P- P d P- 3 Φ rt -> SD: 3 rt 3 φ Φ 3 SD s tr 3 O 3 N 3 Φ CΛ • _^ 3 3 vQ 3 3 P Φ P d CΛ • * _* Ω 3

Φ r P- 3 Φ P "SD P ¹ Φ Φ ≤ P SS CΛ P- P- Ω Φ vQ Φ P- P 3 rt 3 ^J

P tr 3 rt et 3 3 P- O P- P- φ 3 tr (d Φ CΛ Ω d vQ P P- Φ

P- SD tr rt d Φ O: 3 - Ω cn CΛ P Φ d 3 Φ P- Φ Φ tr Q- 3 d 3 3 φ

SD P Φ tr tr 3 P vQ Φ φ H 3 "Ω o ^f fl P- P vQ P vQ P- 3 rt Φ SD rT CΛ tr P

H • _^ P- φ Po vQ P- P rt 3 "s: d Ω <Ω CΛ 3 3 rt d P ^^ d rt tr Φ tr rt P o SD P- P Cd α d Φ P- 3 tr Φ 3 - tr Φ Φ 3 "cn 3 o CΛ d Φ P TJ

Φ 3 P "P" Ω Φ 3 Φ 3 3 φ? et P Φ P rt Φ 13 vQ xt vQ P cn Φ d

P SD d 0 vQ Φ P- 3 "P- rt cn vQ rt d tr ≤ P Po Φ P- P o Φ Φ o P- Hi

Φ CΛ 3 3 Φ P Φ? R Ω? Q. P- 3 p- Φ Φ P- 3 rt Φ SD 3 P tr α 3 Ω Po

P- cn Φ 3 φ t O T) SD Φ Φ o vQ 3 P- 3 Ω 3 rt P- φ α 3 'φ

Ω Ω 3 Φ P- rt 13 d 3 P P 3 rt "Ω Ω <σ ^ α SD cn P Φ P

3 "α X <3" φ P Φ 13 Hl α SD d 3 '"d O N Φ φ? T rt P C tr

P- O SD 3 ^" Po P- Φ P ¹ Hi Φ (Λ 3 d 3 Φ ~> 3 P ≤ 3 P rt P) Φ CΛ Φ SD Φ

O Φ 3 3 P P- 3 3 S. d φ P Ω Φ Φ cn vQ 3 vQ Po • α φ Φ tr rt Ω <1 P rt P- Φ 3 Φ O 3 P Φ 3 "Ω CΛ tr P- cn Φ Φ P P- P- 3 ^* SD o Φ

Φ <SD CΛ P α Po 0- vQ tr P SD 3 ^* P- N P- 3 vQ P ^ cn 3 P ¹ P- SD P <3 P-

P Φ? Ω Φ d tr d: d Φ ω SD 3 P ¹ s: 3 CΛ φ rt O Φ P φ CΛ cn Ω

P rt tr P 3 Φ P P Q- P Φ rt 3 Φ P- tr 3 P- 3 3 P- P- P rt rt SD tr

Φ tr Φ vQ cn Ω P- Φ P- d P- Ω σ CΛ Cd Φ SD: vQ rt rt rt Ω • d CΛ P ¹

P- P- P- rT Cd cn o 3 "Φ P- r + 3 CΛ 3 ^" SD Ω Φ cn EP d SD Φ cn tr «3 Ω Cn P-

3 3 3 o φ vQ 3 P- cn Ω cn vQ Ω SD P 3 ^* rt o Φ 3 rT vQ rt o D vQ - 3

Φ P 3 P Φ α φ cn Φ - • CΛ 3 ^" 3 Φ P 3 3 vQ rt P vQ d 3 SD ω P- P-

P d P- 13 Φ 3 Φ p- P cn Φ Φ P- P- 3 P- CΛ Φ SD Φ 3 rt α φ Ω 3 Cd

3 Ω SD P- SD: P φ Ω P- 3 1 CΛ Φ Φ <13 P- r 1 vQ! D d P- 3- φ vQ - rt Ω EP cn P- 3 'SD 3 rt tr P φ P 3 P- * - P 3 rt ≤ 1 cn 1 P- 3 Φ 3 P ^> 1 Φ Φ PO 1 O rt Ω 1 _^ Φ 1 1 Φ 3 1 CΛ PI 1 3 tr 1

Layer e.g. the buffer, through which both the buffer property and the connection function are then realized.

In operation, the connection area is advantageously formed at least with a surface area thereof as an essentially integral component, in particular as a layer, in an area of the existing structure of the contact device and / or the circuit unit. The integration into an existing structure also enables automated production, preferably in a prefabrication step, with regard to the design of the connection area.

The connection device can be designed such that the buffer area is connected to the circuit unit and the connection area is connected to the contact device. However, there is also the reverse procedure, in which the connection area faces the circuit unit and is connected to it, and on the other hand the buffer area is in contact with the contact device.

The buffer area and the connection area can be directly connected to at least one further surface area thereof during operation, so that the buffer area and the connection area are in contact without an additional intermediate layer and are fastened to one another.

In another advantageous embodiment of the connecting device according to the invention, an additional intermediate area is provided, in particular in the form of an intermediate layer, in order to indirectly mechanically and / or electrically connect the buffer area and the connecting area to one another during operation. It can thereby be achieved that the circuit unit and the contact device as well as the buffer area and the connection area are further decoupled from one another thermomechanically, ot ⁾ t P ¹ P> o cπ o Cπ o UI tr P- ≤ «SD SD ≤ td tr tr o CΛ 3> d ω Tl> ω o CΛ cn P <φ 13 n Cd CΛ

Φ 3 Φ o d d φ φ SD: P- Φ φ Ω d 3 Ω d = d φ Φ φ Ω φ o P SD Φ φ O

P P- 3 ω Po P- rt P ¹ 3 P 3 tr 3 d tr P Po 3 P φ P- tr P- PP rt 3 P

Φ CΛ rr • _^ rt P rt SD: Φ vQ 3 φ SD tr rt P rt P- Ω rt φ P- Φ α

P- P- Φ SD vQ Φ P- d Φ EP 3 Φ P- 3 P ¹ a SD CΛ CΛ Ω tr Φ P- tr P- SD

Ω P φ sC P Φ O 3 P 3 3 rr rt Φ d P- Ω 1 tr P- Ω P- s: Ω CΛ tr Φ P- et tr φ Φ tr vQ Po Φ td P- tr d 3 Ω tr cn φ rt d 3 ^* o tr CΛ f 3 Φ P- H 3 Φ CΛ P- P- P- SD d SD: 3 <l tr SD Ω P- SD 3 tr Φ P- α Φ rt P- H Ω P tr 3 3 vQ d 3 P ¹ iQ T5 O φ P- tr 3 P SD 3 rt d SD

> Φ <3 tr s: P- Φ Φ Φ Hl rt CΛ d P 3 rt P- Φ rt ^^ Po SD: P P- d

3 P φ P Φ φ Φ P P- P d P 3 vQ tr φ Hl d Ω P- o rt rt Ω 3 Ω

CΛ P P- et P P- Φ 3 Φ 3 CΛ P SD o P- Hi P- CΛ 3 tr S vQ Q. Φ SD: tr tr et <tr Ω cn P- vQ ≤ Ω d rt 3 Φ Φ Ω vQ rt Φ Φ P EP N tr

Φ φ P- tr P- Q et et ≤ Ω CΛ Φ tr 3 Φ tr P vQ tr cn φ tr SD P SS rt ≤ cn Φ a.

P 3 et cn o Φ tr vQ P- SD tr P Φ tr rt P- Φ 3 P d φ • P- p- N P- tr C rt 3 cn Φ rt Po P- P- Φ Ω P- N cn P - CΛ Ω d Φ

Φ P- d 3 φ P- Φ φ 3 Φ rt 3 P- rt P tr 3 PJ SD iQ Φ ω Ω tr vQ

3 3 vQ d P rt 3 p- SD: P Φ Φ CΛ 3 Φ et - d tr φ P φ tr rt

<! v 3 d rt 3 EP Φ 3 P P- P- P- SD Φ Po tr φ Φ SD tr o d SD 3 <φ Φ 3 Ω 3 Ω P P- s: P- <cn 3 P- d φ

3 3 3 tr φ Φ P- 3 3 tr Φ tr φ tr rt rt Φ 3 P ¹ Φ P- 3 Po P vQ P- vQ ≤ PP Ω tr Φ P- et Λ Ü; P- P- Φ P 3 CΛ φ φ 3

N et φ φ tSI tr tr Φ <φ CΛ vQ P ¹ Φ SD ≤ vQ N CΛ rt Φ tr α. O P- O

P- 3 s P- P- X φ P Φ Λ o φ p- 3 P ⁴ P- Φ d Φ! D rt P- tr tr 3 3

3 P- SD Ω 3 3 O 3 CΛ P o 3 3 Ω rt tr P P P 3 3 SD Φ SD Φ

3 rt φ 3 tr 3 3 rt tr 3 φ tr P ¹ α * P ¹ Φ P ¹ CΛ 3 Ω

P Φ d rt Φ P- φ 3 P- Φ O X! P- σ d P rt o tr

/ T Φ et P Φ 3 SD SD 3 3 Φ P Ω p- tr O CΛ cn SD 3 d 3 Φ SD

SD P- CΛ Φ 3 vQ ?? P P φ 3 Φ tr rt Φ φ 3 o Ω tr VQ πj 3 P_ P 3

3 3 Ω 3 P- et cn et SD Cd d CΛ Φ P φ φ <! P rt tr Φ ω d vQ φ P-

3 Φ tr 3 tr tr Φ d Φ 3 <o 3 P O! D α Φ P- tr Po CΛ P 3 CΛ CΛ

3 SD CΛ SD: Φ P- CΛ P vQ tr o tr> tr P CΛ _V SD P Φ Po φ CΛ O: Ω

SD P ¹ Φ D3 P ^> P 3 Φ CΛ Φ P SD d SD Φ N Ω rt CΛ? R P φ P- vQ tr d N rt P- φ rt Φ P vQ P- φ <! (ϊ- 3 Hi d P d tr Φ ω d 0: Φ P 3 tr H φ

Ω ≤ d rt rt P- P- Φ Ω P- o φ P- 3 CΛ Φ vQ P- P- 3 3 P- tr tr o P- tr P- 3 Φ PO Ω Ω tr tr 3 P P- CΛ SD P- et Ω 3 P- 3 Ω Φ Φ tr Ω <

CΛ vQ P- tr tr P- PNP ¹ Ω tr! Ω tr P 3 \ φ tr P P- Φ tr Φ

N Ω CΛ SD Φ φ rt SD P- d φ tr 3 tr 1 et P- o 3 Φ rt CΛ P

P- tr φ 3 tr P Φ d d Ω vQ • Φ φ d Po Ω ro cn P- et rt CΛ

3 Φ P- vQ p- 3 Φ Hi tr rt 3 3 1 P- O: tr φ Φ Ω Ω d tr 13

3 3 Φ SD P- 3 vQ et rt Φ 3 P- 3 P rt rt P P- tr tr 3 Φ vQ SD tr tr O d 3 φ d 3 d Φ 3 cn 3 d P φ p- P Φ 3

<Φ φ P Hl 3 <! P- s: 3 3 Ω P- SD tr P- 3 P- Ir "cn Ω 3 P 3

Φ P P- fl ≤ Φ CΛ Φ vQ tr d CΛ φ vQ vQ Φ φ φ tr XI o P- d

P Φ rt 3 φ Φ N P et d SD 3 CΛ CΛ Φ tr vQ et Φ o 3 3 3

≤ P- * »Φ P- cn ≤ tr Ω ≤ CΛ rt 3 OP tr P- CΛ Hi P 3 φ vQ vQ φ Ω rt 3 Φ Φ dd 3 Φ Hl tr P- vQ 3 P- P- Φ Ω O: rt Ω

3 tr vQ φ 3 P- 3 3 Φ P- d: Φ CΛ Φ P- <3 3 P tr P N SD tr vQ α

Φ P- P rt rt α P CΛ tr P Ω Hl φ Φ Φ d P- 3 s. K SD Φ P-

Φ o vQ ω Φ Φ rt P 3 tr Φ CΛ PP φ α = 3 Ω P- P- et 3 3 ^" φ rt Φ rt <! P- 3 3 ≤ CΛ do Φ P Φ Φ ¹ P- tr vQ tr vQ CΛ Φ P- SD CΛ

Φ tr _"* O Ω φ P- 3 3 P rt P SD 3 Φ cn et Ω P- CΛ φ

≤ P Φ 3 tr Cd P- H φ vQ Φ P- tr d P tr φ o tr 3 Ω rt P

Φ 3 <1 Φ Φ cn Ω tr P CΛ Ω <vQ Φ Po P- vQ φ 3 P- Φ P tr Φ

P • n φ O 3 P rt tr Φ Hi 3 "Φ rt P- 3 SD P Φ 3 P- φ 3 tr α d 3 P Φ Φ • Φ P <o PJ P d o 3 φ P- P tr Ω Φ

Φ Po Po N P P- P φ P 3 CΛ P- 3 Φ s. vQ P- tr Φ tr ^ i ≤ P-

3 Po SD d SD Ω ö Φ P 3 P- 13 CΛ p- P- φ φ Ω P 1 rt o Φ

• Φ P ¹ vQ P tr Φ P- 3 1 1 SD rt 3 3 P 1 <! 3 ^* Φ d cn 3 P Φ

PP ¹ cn 1 3 rt 3 "P- Φ o Φ P 3 1 1 3 1 1 1 1 1 P 3 1 vQ

co co M to P ¹ P ¹ cπ o Cπ o π o cπ

Öd P- P- tr SD <Cd ω φ Cd PP <P CΛ SD SD P α QT) ω N ^ sS ω> 3 S d Φ CΛ cn Φ do φ Φ P- d φ φ φ φ P- rt d φ H Φ d Φ d φ SS Φ Φ P- Φ d P- Φ

3 P- rt rt P- Hl 3 et 3 3 3 P- P- ?? P Ω Φ Pi P- cn P- 3 3 Hl 3 Φ PHMP cn CΛ P- Q • CΛ SS P rt φ vQ Ω et tr tr tr cn Ω vQ SD: Hi rt P- 3 Ω tr Hl Ω rt ω Φ d 13 Φ <P- P ¹ 3 cn φ tr Φ P- et rt rt s: 3 ^{^} cn EP Φ H rt Φ tr φ N d: tr Φ Q P- 3 P- P- o Φ P- vQ P- • P 3 d ≤ φ vQ P P- Φ P φ P sS tr φ P

Φ 3 φ CΛ P tr Ω Φ φ 3 3 d φ cn Φ Φ Φ σ Ω 3 P p- P 3 Φ

3 Φ P ¹ rt rt tr P 3 φ><d vQ 3 P ¹ φ Φ tr 3 P- Φ tr P- φ CΛ d

SD: P •• _* Φ 3 Φ cn SD: P 3 Φ 3 o P 3 φ SD: 3 P Φ Cd cn P- 3 Ω 3 <<

EP Φ 1 P- P- 3 rt EP CΛ P vQ SD tr rt 3 EP Φ Φ 3 Φ rt 3 rt tr vQ φ O

Φ ss s: P ¹ rt Φ Φ S rt tr tr s: Φ <Hl Φ P P- P tr Φ CΛ PP

3 Φ Ω H Φ α 3 3 φ φ p- 3 vQ Φ P φ P- (D 3 Ω a. Φ Φ öd SD: 3 Hl ω rt

P- tr P- SD P- 3 P- φ P Ω P ¹ SD tr SD P- cn φ tr o 13 Φ

<rt Φ rt Ω ≤ Φ P Cd <! rt rt z O SD σ tr <3 P Ω rt rt Φ P SD P-

Φ Φ P SD tr φ 3 SD Φ φ Φ φ d SD tr tr P- Φ cn Φ α <SD - <P P 3 3 H

P P 3 Φ 3 d P P P 3 3 Φ Φ 3 P P Φ Φ d O P- O Φ 3 Φ tr Φ P- P 3 <cn Φ σ Φ <vQ Φ α P P Φ tr P P cn SD 3 Φ P- P- d

P- 3 3 Φ Φ p- P- 3 o P rt d co P- P- φ tr d tr Φ Ω Φ 3 tr

3 3 1 P vQ Ω 3 3 3 φ P- ≤ 3 Φ 3 3 3 d vQ Po <P tr P vQ P- tr Cd et Φ tr Φ tr p tr p- CΛ 3 3 Φ vQ cn Φ SO, 3 Φ SS O 3 Φ 3 d φ Φ ≤ P P- tr d Φ tSl rt o ω cn rt 3 d <! tr Φ P P- P- Φ φ 3 cn

3 <! rt SD: P- 3 P- SD 3 <! P- tr CΛ Cd φ tr SD 3 o Φ P- P- rt rt 3 P- P P- Q o P ~> φ SSI P> d vQ o 3 Φ SD Φ φ 3 Φ 3 Φ vQ P 3 P ⁴ cn Φ 3 Po Φ Ω cn P P- et ≤ d Po cn P 3 P- P ¹ P- rt rt PP cn rt rt P- sS Φ P- P tr

Φ N φ tr p- 3 Φ • * «φ N 3 rt rt P H φ rt cn φ Φ P- Φ • Φ Φ 3 3 vQ et

P- d tr O Φ CΛ vQ rt P- d T Φ d Φ P- P- P- Φ rt P- P- cn rt _"* 3 CΛ α Φ P ¹

3 vQ P- Ω CΛ ≤ 3 vQ SD 3 3 Φ Ω Ω P- Φ 3 ¹ rt sS φ Φ d tr P-

P rt 3 Φ tr tr P- Φ P et 3 vQ SD tr tr tr \ -> 3 P tr • P- Φ sS <3 P 3 Φ Ω

P- Φ P- P Φ Φ CΛ P- Φ 3 N CΛ 3 p- SD cn ¹ Φ φ rt CΛ vQ 3 tr

Ω 3 rr Φ 3 P et Ω Ω 3 ≤ Φ vQ SD o Φ <Cd Ω Po rt Ω 3 PP ¹ rt ω tr P- 3 tr Φ • tr tr SD P- P- Φ d α tr O Φ 3 "rt tr 3 tr P- Φ vQ cn rt> 3 Φ P- φ rt d ω 3 O Hl Φ Φ PP rt Φ d φ P- Ω 3 φ P- Φ dd Φ o P Ω α P dd Ω Ω tr PP 3 vQ Φ d 3 3 P α 3 tr 3 Ω cn

3 cn 3 s. tr Φ tr P- 3 CΛ tr tr Φ Φ Po Φ P- 3 φ φ Cd SD: 3- vQ Po Φ Φ P- Φ X vQ Po Φ P- 3 P- SD P> cn Ω vQ> ι-3 P d 3 Φ cP * _* d: ^f CΛ 3 Ω <cn dd: tsi 3 rt Φ 3 d Φ tr d sS P- 3 P φ d p- 3 "d Φ tr Φ Φ U ≤ tr P- tr rt Φ CΛ P ¹ tr sS cn φ rt tsi vQ α Φ 3 sS ω cn P Hl 3 vQ PP Hl Φ P 3 Φ P CΛ cn φ SD Φ Hl H SD S CΛ SD P- Φ vQ et d Hl et φ Φ tr Φ P - d? r P vQ P- o 3 d P- d: Ω 3 P- tr P Ω <3 P ¹

3 φ P ¹ 3 P- d Φ P ω 3 Φ Φ CΛ <! tr φ Po cn tr tr CΛ Φ SD tr Φ 3 φ

Φ vQ P P- SD 3 3 P rt vQ <! P- vQ rt o P "P- P- rt P φ Φ Ω P d P P- cn cn tr Ω 3 φ cn φ CΛ Φ Ω Φ ^ * 3 p- 3 cn d P 3 tr Φ CΛ SD tr vQ Ω

Po Φ tr 3 3 Φ rt 3 Hi P tr σ Φ Φ et ≤ 3 rt φ P- d P- Φ tr

<O P Φ rt 3 Φ et Φ o ss φ <E 3. o Φ vQ P- tr 3 Ω vQ Po 3 3 cn

OP Φ 3 Φ N • tr PP Φ o 3 O Φ tr P cn 3 P ⁾ : tr tr φ sS f SD:

P 3 P- 3 SS to SD: 3 3 Φ P P P- N O Φ Hi "φ tr Φ d EP vQ Ω φ td Φ P" N Φ 3 N Ω ≤ Φ P- <o Cd rt P <! P- P- 3 φ

Φ α tr SD> P- CΛ P rt s: Φ P Po d tr Φ cn Φ P φ Φ φ P "cn» Q Φ P cn Φ P d et Φ P- φ rt SD vQ 0 P- SD P 3 rt o P- P α rt ω P- φ P <SD ω Φ P- P- o CΛ P Tl CΛ 3 SD rt Sl tr tr P α Ω tr Φ _^ Φ 3 et tr Φ Hl 3 CΛ Ω 0, Ω s: d H s: rt d Φ Φ Φ P- α P- tr d rt p- Φ tr

Φ Φ P CΛ d: et tr Φ tr Φ Φ Hl CΛ Φ SD CΛ 3 P- P 3 φ Φ P 3 sS 3 P Φ

3 P tr 3 "co P Φ P P Pl P- rT rt *« P tr φ α P-

"Φ P P

Po d vQ P Φ Po P- 3 Po (φ P- CΛ et ti tu Φ ^ d P- P- Φ CΛ _- ^■ P- 3

P- 3 φ d P Φ CΛ P- tr P- Φ P 3 Φ Φ P- Φ P d 3 φ 3 3 3 3 rt Ω Ω Φ o

3 tr 3 Φ P rt 3 Φ 3 3 tr P- 3 P Φ 15 vQ P p- Φ tr tr P- 3

SD 1 Φ P- vQ P- 3 P 1 • Φ P- 3 3 Φ 3 Ho ω Hi rt sS 3 P- d Φ et rt Φ cn 3 ¹ CΛ O Φ P- S. Φ 1 P- 3 1 P- Φ tr P- Φ CΛ 3 P d Φ Ω cn α 1 tr P 3 φ P- 1 tr Ω P Φ 3 1 rt sa 3 tr Φ 1 Ω φ tr 1 1 Φ vQ Φ rt tr 1 3 3

co ω l \ 3 ro P ¹ π o Cπ o cπ o Cπ

Q (X CΛ cn td rt P CΛ SD tr φ et tπ σ 3 P- d φ s α d tr ω = s SD N tr Q_ vQ ^ l_J. N p P- o P- p- d P- Ω 3 φ P- d SD P- Φ 3 3 P- P- P- 3 P- φ Φ dd P- Φ o Φ d

Φ Φ Ω 3 3 Ω tr O P- 3 3 H Φ P CΛ (X 3 P Φ 3 P ¹ P- Po cn 3 rt Φ 3 sS 3

3 sS tr P- vQ tr Φ P rt Φ vQ tr tr \ Φ α P. tr - ¹ Φ α P- rt φ P-

N> P- vQ et 3 CΛ Φ * _ Φ O 3 o iX d cn tr d P- Ω SD P- 3

Hl d P N Φ <! d 3! D Xi Φ Φ P O CΛ tr tr P- 3 rt Φ φ 3 cn tr?

Po d o 3 <d d o P- P- Hl 3 O Φ tc Φ Φ Φ vQ SD P 3 vQ rt Φ rt P- Φ

(D: 3 CΛ sS P vQ Φ 3 Hl 3 3 rr P- rt 3 P SD <3 cn O 3 P. cn • 3 Φ vQ CΛ

Ω SD <! SD Φ vQ P vQ et tr Φ 3! D H o tc tr tr 3 o φ tr ** P- Φ rt tr tr o 3 P- Φ 3 tr SD Φ P? Φ Φ tr P tr Φ Φ 3 tr Φ H 3

Φ 3 P J3 rt cn P- P- P. o? V P- 3 d rt P ¹ P ¹ N Φ PP Φ 3 P- CΛ P 3 d P Φ φ

Φ vQ Φ Φ Φ 3 3 SD φ rt rt o 3 Φ Φ Φ Φ d cn cn φ SD: 13 Ω Φ cn 3 P- P P-

N Φ 3 P tr P Φ vQ P- Ϊ P- vQ Ω rt P- sS 3 P tr P- tr (x Ω CΛ 3

$. CΛ Hl Φ Φ Φ d d φ P- d cn 3 Φ rt rt rt 3 "Φ Ω Φ d = P- Ω φ ^ tr rt

P- O Ω SD 3 cn 3 P 3 3 P- vQ P P- P φ P - ^> tr P- P- Ω Ω tr cn o et Φ Pl co 3 tr CΛ rt vQ Ω 3 P 3 Φ P- 3 P - P P- P- P ¹ cn rt Ω? tr cn o P. d φ

Ω cn cn P- Φ tr N P- ω SD 3 Ω Φ Cn 3 3 φ d Φ tr CΛ rt 3 φ 3 CO P- tr et SD Φ 13 CΛ 3 "Φ Ω tr d SD: tr cn Ω o tr 3 <l P Φ SD (XP vQ Φ φ tr vQ 3 Φ rt cn Φ P- 3 "φ cn EP rt tr φ Φ vQ φ Φ vQ p- or Φ P

3 Φ Φ (X? • P P Ω rt CΛ vQ Φ d O Φ d P- 3 P Φ rt cn P (D Φ Q.

P 3 et φ SD tr do φ 3 3 '3 ¹ 3 Φ 3 sS <P φ φ Φ P- P- φ φ 3 *% sS Φ P- CΛ cn 3 3 3 tr CΛ vQ P- Φ SD Φ O SD P «CΛ 3 Ω CΛ

P- O P- 3 Ω CΛ Φ vQ P. P- Ω 13 <o P Φ EP 3 P α 3 d: - CΛ tr

3 3 Φ Φ P- Φ tr rt Φ tr <cn φ ςx P iQ α tr φ o co 13 J P- tr <φ Φ P- Φ SD NNP P. SD Φ P Φ ω Hl Φ Φ Φ Ω φ Hl 3 3 Φ φ

P Ω 3 Po P Φ P ¹ d P- d Φ φ P "PO tr P Ω P- tr rt tr tr cn Φ 3 rt CΛ SD P

3 "Φ o P rt P cn P et et sS P P- tr 3 SD P- Ω P Φ o <er

CΛ SD 3 P ¹ <! Hi d et Φ d Φ Φ 3 SD P. P- sS 3 Φ PJ tr vQ 3 o P-

Ω 3 vQ o P- 3 3 Xi P- d 3 3 P 0, Φ _- ^■ d Ω Φ d P- tr sS P 3 3 tr p- ^f -ö rt P 3 iQ φ P o 3 3 vQ P d P r + 3 tr PP ¹ Xi Hl Ω Φ φ SD »P.

SD cn d P cn Ω P- 3 Φ P. CΛ Φ P. 3 vQ d vQ P. d d tr cn 3 P d 00

P ¹ Ω Po P- d Φ tr Φ rt 3 SD rt Φ vQ P ¹ 3 cn <Φ 3 13 rt rt 3 Φ Φ SD 3 rt tr Hl Φ 3 P- SD SD sS 3 • P Φ vQ vQ Φ 3 vQ Hl Φ d Φ PP ¹ vQ d φ Φ vQ iQ 3 3 Φ? O Φ O vQ Φ P- cn Φ P φ P 3 tr P Φ CΛ CΛ

3 3 P Φ cn tr p- P rt tr P- P P- Ω SD 3 Φ? R SD P vQ rt Φ CO P- tr vQ 3 vQ φ CΛ Po P- P- ω P. Φ 3 tr 3 SD: P- SD oo * _* P Φ 3 Φ cn <o α Φ P- Ω P- Φ 13 rt 3 P- Φ Φ o EP 3 3 cn σ tr SD CΛ φ φ P φ φ Φ 3 rt tr 3 P d Ω P 3 P Φ Hl 3 Φ Φ d 3 Φ rt CΛ P- Φ

(_ .. P Φ 3 SD: Φ P. d o 3 3 tr *> »SD» φ P P cn d P SD P "P-

3 cn P EP 3 3 d 3 α P- vQ φ CΛ 3 <Ω P Hi Po vQ So cn 3 i → Ω tr 13 td P- 3 vQ Φ 3 3 Ω N d Φ tr sS cn P ¹ φ rt φ o tr φ SD ⁱ χ) P <rr d vQ P P- tr d 3 P rt O rt SD: SD: tr; v Φ rt SD cn

P- 3 d Hl Φ 3 cn CX Φ cn 3 (DP vQ tr (X Φ Ω Ω P- Φ Φ P. Φ rt 3 Po P- P vQ Φ α cn et P- - "* _* P- sS d P tr tr P- CO P- Po P

* _* d Hl 3 σ φ \ Φ P Φ rt rt et 3 3 Φ P Φ φ α 3 Φ P P-

3 Φ (X P- P o 3 P Φ P- d φ P- P. P Ω Cd Φ Φ P SD co 3

3 vQ P d 3 p. SD: CΛ vQ 3 3 3 3 Ω 3 d P. tr Φ C rt Φ 3 Φ cn

SD: Φ tr 3 P ^ Φ EP Ω P ¹ cn cn P- vQ tr cn 3 φ P φ Φ φ P- SD φ CΛ tr

3 3 Φ vQ d o P Φ tr Φ tr 3 cn SD tr vQ 3 P. Φ cn CΛ sS Ω <! CΛ rt Φ

H P 3 3 SD P- φ φ P. φ 3 φ cn • Φ P- Φ 13 tr o SD cn

P- SD Φ Φ iQ rt Φ CΛ P ¹ Ω p- cn Φ P- P- cn Φ P Ω tr ¹ tr * PP ¹ 3 o 3 o

Ω 3 P- P cn SD P ¹ Ω rt tr 3 O cn 3 cn o P- tr Φ φ P. P- P 3 tr Ω vQ Φ T Φ tr d φ Φ 3 rt tr Ω 3 3 SD SD φ N φ (D Φ rt tr Φ P- rt rt SD 3 3 α Φ φ tr P d ςx 3 P- cn d P φ Φ

SD φ tr 3 Φ et P ¹ vQ CΛ φ 3 P- φ φ P- Pi Φ Po Po rt CΛ P- P

3 P Hl φ P p- P rt CΛ Ω P cn rt 3 P Ω tr cn PP <vQ P. ¹ Φ d: 3 P- 3 P- d φ ω tr φ Φ tr SD SD SD sS <! Φ Φ φ

Φ P Ω 1 1 3 P- o SD Φ et d <3 3 Φ 0 P σ P

P- tr vQ 3 sS SD P- P- d Φ φ P. P 1 P- 1 1 1 cn 1 P- 1 P ¹ 1 3 3 P CΛ cn Φ 1 P ¹ PP

1 φ cn vQ 1 P 1

to build a chip back and a die bond. So far, these thermomechanical tensions between a chip and, for example, a lead frame have been compensated for by gluing or soldering.

By means of the connecting device according to the invention and in particular by means of the buffer or buffer area, the stresses that occur due to different coefficients of thermal expansion of, for example, silicon and copper can be absorbed depending on the dimensioning. By using a buffer area or buffer, the assembly-related maximum chip areas of the individual housing types are significantly increased. This means that larger chip areas are available for each type of housing, which would be restricted in the conventional method by gluing or soldering using the appropriate gluing or soldering furnaces.

The buffer layer also favors the alloying process. Usually the thin alloy layers - from e.g. lμm - only applicable for small chip areas. The buffer layer also allows large chip areas according to the invention, as can also be achieved with gluing or soldering.

Furthermore, the alloying process is also considerably easier to implement than the gluing process or the soldering process. Overall, this leads to a significant reduction in process costs.

Another advantage lies in the far better reliability of the alloy connection compared to other die bonding processes.

The decoupling between the buffer layer and the connection layer is also decisive for the advantages of the connection device according to the invention described above. The buffer is moved to another existing structure, namely the structure of the circuit unit or the structure of the contact device.

The use of a buffer area with the properties specified above would significantly increase the maximum die-bondable chip area in a housing of a given dimension, because the connection layer is already on the back of the chip or on the lead frame and therefore does not have to be applied during the die-bonding process itself.

The area thus freed up on the contact device, which was previously wetted by adhesive ovens or solder ovens, is now available as a possible additional chip area.

Further aspects and advantages of the present invention result from the following illustrations:

As already mentioned above, it is proposed to form a connection layer in the connection area, in particular in a first area thereof, from gold and tin or from tin alone. The connection area as a whole and in particular the first area thereof, which at least contains tin, is advantageously realized as thin as possible and is thereby arranged between two areas or layers made of the same material - namely either between two silver layers or between two copper layers.

As a result of this procedure, a new alloy connection between tin Sn and silver Ag or copper Cu is formed in the area of the first and second areas of the connection area and the first area of the intermediate area through the interaction of the materials of the intermediate layer and the connection layer as part of an alloy exchange. co co ro N) P ¹ P ¹ cπ o Cπ O cπ o Cπ

3 13 S N P P sS tr P CX co S <! tsi Ω P tr α * 3 Φ SD CΛ P CΛ CΛ O Hl rt Φ vQ σ

P- P P- sS φ Φ p- Φ Φ Φ Φ OO P- tr φ Φ p- Φ P- P- P ¹ Ω d P- P- o Φ d rt Φ SD vQ OP P- P- P- P P- 3 P cn 3 P ¹ 3 φ 3 cn Φ vQ rt 3 cn tr 3 P ¹ HP ¹ 3 P sS tr rt N x CΛ Ω Ω (X P. O et h- ^> 3 3 o P- Φ O 3 vQ tr tr X 13 Φ SD tc Φ

Φ φ Ω 3 "tr Φ tsi Hl 3 SD CΛ 1 Φ 3 s; Φ <i φ CΛ Φ Φ 1 Φ 3 φ P- cn Φ tr CΛ 3 P- Φ P vQ rt iX <! P- CX SD P Φ <5 CX P ¹ rt PPNP N3 P

P- CΛ P- φ ex o 3 Ω Φ Φ SD: φ O 3 φ tr d P Φ Φ N φ 1 1 P- SD <CO cn Φ tn 3 3 Φ SD CΛ 3 tr P 13 3 vQ Φ PH 3 vQ PP rt 3 N CS! 3 rt O Ott P

O tr CΛ SD cn φ 3 cn P x P- cn vQ P ¹ vQ Φ 13 P- P- 3 d 3 o Φ vQ rt (tr Φ μ. Tr P- O P- φ cn tr Φ CΛ Φ P ¹ 3 Φ 3 3 1 P o P- tr Φ P <CΛ tr rt P- rT <! N vQ P rt Φ X P- <i P- Φ O 13 P 3 3 S tr N r- ¹ tr φ tr CΛ Φ Φ O φ φ 3 O Φ Φ d SD: cn 0- 3 Φ Ω P- P Φ SD P- φ P- tr d rt p 0 P- P P- 3 N CX P cn 3 3 o 3 Φ P tr Ω rt P rt tr tr CΛ P 3 P- 3

3 3 Ω tr x EP d φ rt cn P- vQ CX 3 3 P tr CΛ tr Φ SD d N N Ω φ 3 cn vQ cn

Φ SD tr P- Φ et ex vQ P Φ • cn • P- P. Φ P- s cn P- rt P SS SS tr P- ω P-

H Φ CΛ 3 P -> Φ Φ P- O vQ φ 3 tr 3 Φ ss P "d • • I Ω tr M 1 Ω td CΛ P CX P cn d rt H φ P Φ CX P- φ PNP tr N 00 tr

P O Cn p- d> P- Φ 3 tr tr 3 CΛ <cn d CΛ p- sS X <N P- sS o o

CΛ 3 3 d 3 CX rt N SD Φ c! Φ o 3 Φ cn CX O P- d d CΛ CX • o CX p- et φ <! vQ ex SD N d Hl P td 3 cn P 3 vQ Φ SD tr ω 13 rt φ cn φ 3

SD P- o CΛ cn CΛ Φ cn rt CΛ et 3 3 sS Ω tr CX VQ cn Φ Ω Po P PJ P CX P

P 3 P ^> P- tr 3 3 Φ φ x SD tr P- φ Φ Φ tr Λ P tr φ d φ <!

P Φ P ¹ P ¹ Φ 1 tSi sS rt P- Φ 3 3 3 P 3 CΛ o tr φ P 13 P ¹ CΛ P 3 <O d Cn tr P CX p- P- N CΛ td P cx φ cx cn rt rt tr tr SD 3 1 Po φ Ω SD: φ P

3 tr rt Φ φ o Φ 3 P φ et P vQ P ¹ P "d ω φ Φ φ P ¹ CX! Φ tr cn 3 P rt vQ Φ SD: P P- ex P 3 3 cn Φ d P ¹ 3 rt P- P- tr tv> P- P sS 3 o P> SD Φ cn 3 Ω Φ CX CX et tr 3 φ iQ d: Φ vQ 3 co 3 1 p- Φ P- P P-

P O ex σ tr P N Φ Φ SD SD 3 vQ cn 3 tr Φ Φ 3 <! o 3 tsi P H cx Ω tr H

Φ 3 P- N cn sS 3 3 tr P P- d tr 3 et P Ω p- O o P- CX N 1 tr Φ tr

P (X vQ sS CΛ Φ rt SD: \ X Φ P cn P- 3 φ φ • rt tr Φ 3 n 3- 3 rt tsi P- SD

Φ φ d 3 P- tr 3 Φ P- d 3 cx P 3 Φ SD CL SD 3 CX Φ P- P- rt Po

<P P 3 1 rt SD vQ 3 Φ φ P 3 P it-. tr rt SD 3 3 3 d rt

Φ cn P- ex Cd Φ P ¹ P- P- vQ P CX X P- <P- P- o P- tr 3 13 3 3 φ

P d 3 φ rt Ω Φ CL tr P- SD Ω Φ CΛ cn vQ o CΛ P- Φ 3 Φ 1 Cd vQ P tr <! 3 d = P co Φ tr P SD tr SD: φ P tr P Ω Ω Φ o 3 sS P 3! Φ cn

P- O (XJ tr φ Φ 3 d CΛ φ d: ω tr tr tr P ot ⁾ P- CX SD P- P rt S

3 P ¹ d φ P- P CX CΛ 3 cn P- et CΛ tr P- 3 1 • OD <P P- rt cn Φ Φ φ

(XP ¹ tr 13 P Ω Φ Φ P- vQ P- Φ P ¹ 3 Φ rt <O Φ -T Φ d Ω P- 3 P- d CΛ Φ Po tr P- 3 CΛ P- φ 3 P P- X tr Φ PH o P rt P tr Ω 13 ω

3 rt cn Φ ex Ω tr tr 3 P- SD tr Φ d N φ P 3 o vQ • tr ¹ Φ? tr Φ φ vQ (D: Ω P Φ tr CΛ φ Φ 3 3 Φ tr Po 3 rt P SD cn P "Φ 3 PP

3 tr 3 d Ω P cn cn φ P P- Φ vQ Φ 3 P vQ φ Φ σ vQ P- P SD Φ

Φ P ¹ φ tr ex tr et Φ 3 Φ 1 3 P cn 3 P- tr Φ P- P- P- P- <! cn Φ rt P-

P P- Φ P- Φ Φ φ P- tr SD vQ P- t i (D rt cn 13 cn Φ CΛ 3 Ω Φ Φ O rt P d 3

P vQ d 3 P P cn Ω N 3 Φ tr 3 P- d Ω Φ Ω P- SD Φ tr P 3 pi P Φ

Φ Φ 3 vQ cn tr sS CX 3 Φ Φ 3 cn σ tr P tr rt 3 3 d H CΛ

P- P- Φ rt ex <rt • et ω cn 3 Φ P- SD φ d rt PN φ 3 tsi P ¹ Ω P- P

Ω d vQ tr Φ Φ Φ Φ SD Ω tr 1 P- P- Ω rt 3 Φ dd vQ P- Φ tr 3 Φ tr 3 et Φ 3 3 P SD _ P- rt tr Φ 3 3 tr d CΛ vQ Φ P Φ cn 3 • 3 P ¹ rt CX Φ rt tr 3 d N cn tr et P rt CΛ P SD d 3 Φ td SD

, P rt co φ P- vQ 13 Φ ON Sl <τ) SD rt vQ rt πd ___- <3 H Φ rt tr Φ Φ P 3 Φ Po N d 3 sS φ P tr CX tr Φ P- P- P Φ tr o 3 NP P-

Φ S et P cn ex tr Φ sS d 3 P • cn o N Φ P- 3 tr <O vQ p- P rt Φ <

CΛ o Φ rt do P Φ 3 P- Φ φ N sS PP ¹ 13 rt N P- P ¹ Φ CX Φ P-

Ω 3 P- P- Φ 3 et _^ P "vQ PX <3 Φ • P- Φ tr Φ φ α P P- et cn 3 Ω 3 tr Ω 3 vQ Φ Ω CΛ rt cn d rt cn 3 rt P CΛ o CΛ P d Φ 'S tr P-

SD rt tr cn 3 <! tr et Φ 13 P ¹ cn φ Φ SD: SD P- tr cn d 3 CX cn Φ φ φ vQ Cd σ O φ SD 3 Po P- P- P- d rt rt Ω Φ P- 3 vQ Φ Φ P < CX d Φ ex Φ Φ 3 P 3 Φ 1 Φ 3 φ d tr Φ vQ P 3 SD OP

1 1 φ 1 1 X P 1 Φ 3 P 1 1 3 P-

1 d 1

CO to to P ¹ o cπ o Cπ O Cπ

tr o X ¹ Φ XO cx vQ CX 3 tr tr td cn 03 <cx CL 1 cn td rt vQ o sS tr CΛ O cn Pd σ

SD CX φ P- Φ tr Φ Φ SD Φ Φ Φ P- Ω Φ Φ Φ P- rt P- P- Φ tr P- Φ P- P Φ d: SD

3 φ SD 3 SD Φ cn 13 cn 3 P 3 3 tr PPP Φ 3 Φ 3 OO P- P P- φ P- Ω tr cx Φ XPP Hi Φ Φ 3 Φ tr SD: H 3 P 13 cx cn tr P 3 rt φ

P ¹ Po Hl Po <o is SD P- φ P- P- d tS3 3 P ¹ td CL 13 φ ω P- d iX P p- PP ¹ φ N P- Ω cx sS Ω 3 d = P- d PN 3 3 ex p- P cx Φ

3 Φ SD 3 SD SD: P Φ 3 P ¹ tr SD Φ P ¹ tr cx Ω 3 P- 3 Po d Φ p- SD φ cn φ d P- Pt Q SD 3 rt 3 Ω tr ω 3 ω cn cn P - φ d Pt 3 Ω vQ p- P rt rt 3 P ¹ Ω P 3 rt (D ex Φ Φ φ tr P- CΛ cn rt Φ 3 cn tr 3 ^• s 3 cn tr α Φ 3

O Po CΛ vQ cn Φ 3 Φ ω P- Φ p- P vQ φ Φ cx CL CX sS P- Q 3 3

CL P P 3 CX 3 3 P- 3 3 P cn N cn P- 3 P: Φ d d sS Φ sS φ Ω O CΛ 3

Φ SD o P- SD tr d O: rt P "d Φ o sS cn rt rt d P 3 cn OP SD: P- tr P ¹ P- Φ ex

P 3 Φ d Φ 3 vQ tr tr φ 3 et P- Ω φ tr 13 vQ tr cx tr cn et CL Φ rt P-

Φ Φ P cn P vQ H SD: Φ H- 3 Pt tr 3 tr 3 J Po Po cn P- d PO P Φ \ SD Φ

Cd P rt vQ Φ cn P- P ¹ P 3 Φ CX φ vQ P- 3 P ¹ Φ d = vQ P ¹ P d = Φ o tsi? R r->

Φ o Φ φ P- tr Ω rt Φ tr Φ P et Ω φ rt PP φ cx Ω Ω 3 SD ex P- SD P "Φ cn tr o tr Ω φ tr Φ 3 P Φ 3 3 ^{^} <-t Φ cx d tr t cx d φ 3 3 P- P-

Ω 3 tr CΛ P- tr P 3 φ cx rt (D 3 tr CL SD 3 ω Hl P 3 3 cn 3 tr φ P- P- P ¹ φ P- P- et Φ Φ CX P- _* P ¹ CX N P- 3 vQ cx φ ex I P- Φ p- tr 13 P ¹ P 1 P- cn 3 tr P P- Φ td Φ P "Φ s Φ r SD P- Φ φ *: CΛ CL φ

Ω P- et tr φ Ω rt SD: cn 3 PP sS p- Φ P 3 rt CΛ P- d Ω P- P CΛ tr 3 P φ rt cx tr • PP ¹ rt Φ cn vQ Φ CΛ CΛ P- Φ 3 Φ 3 13 tr P d P- et SD: P Φ CΛ SD: rt Φ <et Φ P- Ω CΛ ω P ¹ P 3 S Φ Po P- φ 3 H d SD vQ ω Λ cn D d _" > 3 mo SD sS Ω φ tr P- o P- φ 3 o 3 Φ Ω rt vQ tr

3 d Φ Ω Φ SD SD 3 PPP d = tr P P- H rt φ <P- Φ 3 P tr et φ Q Λ P tr P- Φ P ¹ cn H d Cd Φ P 3 Φ d Ω tr tr vQ Φ 3 rt rt IX cn rt P. P

CΛ p- 3 P- cn P- 3 Φ 3 P- d cn 3 tr Φ φ rt P φ SD SD Φ Ω Φ CΛ

XI Ω vQ tr Ω ex P 3 φ 3 Ω N vQ rt PP tr r- ¹ vQ SD tr SD O cn Ω φ d tr tr Pt Φ p- φ tr Φ d vQ vQ tr P- 3 SD P- φ P ^ Φ cx P- d P tr

CΛ 13 SD et SD 3 3 ex φ P- 3 Φ rt 3 P. 1 Φ P ¹ 3 3 P- 13 Po o Hi Φ P-

Hl 3 3 rt et Φ cn P- Ω vQ 3 φ 3 φ α cn cx rt ω PP tr vQ CL 3 Ω to φ cx P- 3 P ¹ Φ d Φ 3 tr CX SD: CΛ • <td od cn P- o (D rt Φ Φ rt tr tr P φ 3 P- vQ rt 13 Φ CL φ tr <i Φ tr o P 3 13 Φ CJ 3 tr P CΛ rt

P- Ω P φ SD 3 Φ 3 P o 3 o • 3 ω P- vQ P P φ φ rt P 13

13 3 o td tr SD rt P sS cn φ P "rt tr rt 3 Φ d cn SD SD P tr et CΛ tr ω Φ H P- N Φ td 3 tr P- <tr SD Φ Ω 3 cn 3 Ω d Φ N

P o Φ 3 Φ Φ S P "Φ P P cn SD: 13 o Φ P CL P tr vQ Φ SD 3 tr Cn Ω sS

SD: Cd P Pt P ex P Φ Ω P- Po et P "CΛ 3 P- P Φ P Φ cn d rt tr tr • vQ P- φ Po SD o SD ^' et P- tr vQ p- cx pj: rt ex d P Φ 3 SD Hl J P- φ

Φ CΛ CΛ P ¹ 3 tr Cd CΛ Φ rt Φ φ 3 φ 3 ^• s tr O Φ 3 P- CX d CX vQ d sS ¹ 3 Ά

P rt et SD: 3 P- Φ cn P Φ P 3 CX cn P φ tr 3 vQ rt Ω Φ Po Φ Φ Hl Φ cx cx d

CΛ Φ Ω 13 cn 3 et d P- SD P P- O tr P tr P φ 13

Φ tr tr cn rt rt cx ^ p. P "3 S vQ P" • 13 CΛ tr 3 et S α PPP 3 3 Po o P- et φ P- PJ φ o Cd d P- vQ o Φ CΛ et φ φ cn O Φ N SD Φ φ vQ φ tr 3 3 Ω SD: 3 PP Φ 13 Ω 3 σ P P- 3 rt sS 3 3 d Ω 3 3 n P

CΛ Φ CX tr tr vQ CX 3 P Ho tr sS rt d 3 SD SD: rt O: P P- rt 3 ^* • P tr CΛ o Φ φ Φ et φ Φ Φ φ P- SD 3 O: cn vQ Φ rt d P (D cn <1 rt O Φ P- Ω

P ¹ o PP cx P Φ P <! P- P 3 P vQ P vQ Φ 3 P- Pt P vQ tr φ 3 "o P 13 tr

Φ tr φ SD ω P- cn o Ω CX Φ H! P vQ et • Φ P- P sS P- P- CΛ P- rt Φ n P- tr P ¹ et P tr o <<i 3 P- d P- r P- rt 13 tr φ 13 φ tsi Ω

• P tr Ω Φ o Φ ex Φ CX OO: Ω cn ^* 3 Φ <! O rt P- P rt P- P- tr

Hl P- tr P- CX 1 cx Φ P SD P vQ tr Φ 3 Φ 3 P 3 CX P N 3 3 et

H 13 φ Cd φ sS P tr P vQ P ¹ cn Φ PW 3 cn SD: P φ SD: sS 3 et

[D: rt ex N P N Φ 3 Φ P- P- SD P- et vQ Φ S et vQ φ 3 vQ φ Cn Φ SD

Ω P Φ • • P l- ^J vQ 3 3 3 Ω Φ d N Φ O Φ Φ 3 • Φ P- Ω vQ tr SD: cn Cd cx td Φ s. Ω Φ cx vQ tr P 3 3 d et Φ r- ¹ P P. P rt tr P cn

Φ vQ φ • P- o X vQ d vQ cn cn d: CX vQ SD P Φ α Φ P- P-

3 Φ cn Ω 3 Φ φ 3 Φ • rt 3 CL P "Φ SD SD SD Ω Φ tr P d SD tr rt P tr vQ cn 3 Φ <SD P ¹ P- 1 3 tr tr P

Φ 3 P "Φ cn Φ Φ P o d Φ rt 1 Φ rt rt

1 cn 1 1 1 3 3 Hl 1 P-

o O to

Cπ O π o Cπ Cπ

A detail X of the connecting device 10 provided with a buffer layer 12, an intermediate layer 14 and a connecting layer 16 is shown in a partially sectioned side view in FIG. 2.

It is shown there that, starting from the circuit arrangement 2, which consists of a silicon chip, there is a buffer layer 12 made of aluminum. An intermediate layer 14 follows in the transition to the connecting layer 16, the intermediate layer 14 having a region 14-2 made of titanium and subsequently another region 14-1 made of silver, both of which have a layer thickness of approximately 0.5 μm. The titanium layer 14-2 lies against the aluminum buffer layer 12, while the silver layer 14-1 is connected to the subsequent layer 16-2 of the connection region 16.

The connection region 16 in this embodiment likewise consists of two layers, namely a layer 16-2 of gold and tin connected to the intermediate layer 14 with a thickness of 1 μm and subsequently another layer 16-1, which consists of silver and which Surface area 16b is connected to the copper of the lead frame or the contact device 4.

FIG. 3 shows a partially sectioned side view of an embodiment of a circuit arrangement 30 from the prior art.

In this case, contact devices 34 and 35 are also embedded in a housing 36 made of a potting compound. The circuit unit 32 of the conventional circuit arrangement 30 is connected to the contact device 34 via an adhesive or soldering 31. O CO t to P ¹ P ¹ cπ o cπ o cπ O cπ tr Hl H rt P tr 3 ^ d sS rr sS! X tc O vQ rt CL ω Cn> O t- ^J CL P <! vQ P rt rt PH d: 3 Φ d φ P- φ Φ d Φ O: tr φ Φ P- 13 P- d tr SD d φ Po O Φ P- d SD P- 3

P tr 3 3 3 P ιQ P 3 3 H <1 Po P- 3 Φ SD Ω CΛ d PP Po 3 3 Ω 3 P ¹ Ω

Φ PQ SD vQ Φ • tr 3 vQ Ω O Φ 13 o P tr vQ P Hl Ω SD tr vQ P ¹ tr cn

P- d Φ 3 CΛ 3 IS1 P- tr 3 P SD: P d Φ Po Φ tr CΛ Pt CL 3 rt CΛ P- et φ

Ω 3 vQ CΛ Hl sS 3 3 O CO co d 3 P ¹ 3 N tr 3 Ω et Φ 3 d Φ cn d vQ tr vQ Φ P- O <P- CL SD 4i »P ¹ P ¹ t 3 vQ φ vQ d SD: ex tr P- P rt 3 P- P- 3 φ cn CΛ 3 Ω P Φ CΛ N d 3 P- ^ SD L Φ σ 3 3 Ω α P- SD <! Φ vQ 3 φ vQ 3

P CΛ tr 3 P Ω φ 3 <3 CTi <! Hi d <P, tr Φ P- CΛ tr P CΛ

P> O SD et tr tr P- vQ <O d o H ^ 3 O w φ P rt Φ Ω tc CO φ d SD

4- P rt cx P- φ vQ CΛ 0 3 <g 3 P SD: vQ 3 φ <P d P- tr O: P- 3 o rt

3 N P- φ 3 3 et φ 3 Φ 3 ex SD Ω II P- O ex t- ¹ SD 3 3 SD Po rt vQ N

SD 3 P ex CΛ P- co P d tr o Φ cn 3 Φ O: 3 vQ vQ Φ tr cn SD d CX N d Ω ex 3 CX tr Φ O cn Φ ex rt 13 P rt rt cn Φ rt φ t 1 d N cn Φ d SD td 3 tr SD P Φ σi SD: μ. P ¹ cn _^ Φ sS P- CΛ d Φ φ 3 d CO P- CΛ d

PP 3 P vQ P- CΛ P- PP ¹ 3 tr φ Po vr> P SD φ rt P ^ 3 3 p- O 3 P »N o P t SD Hl cn Ω Ω rt φ et d: P ¹ SD o vQ P ¹ 3 g vQ (D CL d CL φ d Tl> P ¹ P- Φ tr α tr P 3 3 tsi P j3 tx co 3 3 SD: tr § CΛ φ φ P- M 3 P- d O 3 P- rt Φ et p P- ^ d P et § o- o φ CX rt O 3 φ Φ φ d P Po P 3 P

Hl vQ cn vQ P 3 rt d Φ to CΛ P ¹ vQ • ex et P- SD 3 o φ Po d P P> SD 3 o \ o ex vQ p- 3 P- φ Po Φ tr SD: μ. P-CL d

Φ 3 CX t φ Φ rt Φ 3 cx tr P- IX P P-

P d: P 3 P- - »P- vQ d N Ω tr O φ 3 • _^ Φ Φ rt P tr φ vQ φ 3 *> 3 ^* vQ Ω P" 3 P-

3 d tr rtd Po vQ P Φ ^ <o <1 φ co P Φ vQ CΛ cx QP -3 tr dd: vQ P φ P Xi P- sS Φ P- XI ro p- P ¹ Pt 3 P- Ω d

Φ d Φ P- rt 3 X tr Φ 3 CΛ Ω 3 N φ P ia 3 SD: rt tr O: Φ tr 3 tr Φ 3 P- 3 d CL φ O t cx P- tr φ P- d 3 Hl Φ P φ sS tr Ω g <P P- vQ

P- P vQ CΛ 3 CL P cx ^ d P ¹ P- Ω tr Φ vQ 3 p- Ω P- tr Φ tr co SD Φ d Ω • ω Φ Φ vQ Φ φ vQ φ P ¹ D: Φ Pi tr ex d PP 3 tr Ω ω Φ to d p- P 3 tr

P Hi P- P- S

P φ P tr Hl - <3 rt d 3 CL 3 tr 3 Ω rt Po P- 3 iQ et tr φ PO sS 3 P ¹ 3 tr Ω

3 rt tr ¹ tr Φ φ 3 vQ 3 J d p- et v tr P- 3 CU O SD CΛ cn et CΛ P P- Φ o Φ Po P CL P- P 3 3 Pt dg P- d tr vQ ω rt P-

• 01 rt 3 φ PP P- • O: P ¹ φ SD Φ o cn Φ iQ 3 § Ω Po sS Φ Ω P

Φ vQ rt et SD: 3 cn PP rt Φ cn sQ vQ PJ cn rt tr φ 3 tr d sS σ ex tr rt Φ <d φ Ω N cn Hl Φ P- vQ Φ P ¹ P- et CL sS p- Pt Φ

SD Cd φ Φ Φ 3 Φ Φ 3 tr P- P vQ 3 Φ 3 o CΛ Ω sS Φ Ω CΛ Φ Ω et P ¹

CΛ Φ P P- P- SD: P P- vQ φ <! tr 3 cn rt Φ 3 SD: 4l> O tr μ. CX P tr Ω P- tr d Ω

P EP tr 3 o Φ P tr «O ^ SD: EP P d tr CΛ rt P tr cn Φ • ^ d ^ 3 s P- Φ N SD 3 P- d O: Po to EP Φ ex ex CL P! SD rt Φ

P- P- P- Φ Φ 3 P dd 3 et φ sS Φ CL P dd Ω O ex P ¹ ex tr P

Φ Ω vQ vQ P- P-

• cx P Hl P> Φ vQ d P Φ 3 Φ Φ vQ P P tr 3 SD rt CL φ φ

P- tr. cn 3 d o P- cn 3 3 P "Φ P P P- Ω Ω cn rt N d P- 3 CΛ cx

Ω Φ Φ 3 d CL o 3 vQ vQ Ω rt tr tr tr tr O CL SD d 3 φ rt P- tr P>tv> t P vQ Po P vQ φ Cπ Φ Φ 3 tr N SD rt 3 P- t vQ Xi Φ φ 4- »• vQ CΛ Pi Po PP φ d P ^J 3 • L <SD tr

1 P- Φ SD CΛ Φ P- <! 3 d SD ex CL and Hl ω

3 SD: 3

P ¹ cn cn 3 Ω P 3 O 3 3 rt O P- SD Φ Φ d: SD φ 3 et <vQ tg O EP CL CL iQ Φ P φ cn PW P- tr 3 P rt

P- et Ω CX tr CΛ CL 3 o t tr Φ Φ d cn 3 P 3 SD 3 P o er Φ P

H α - Φ P- Ω d 3 P- 3 SD P- P Ho Φ 3 o tc> 3 P φ P P- 3 sS tr rt tr 3 P Ω tr 3 et P 13 d 3 Ω P ¹ d O: d <! r P- 3 CL 3 Φ P-

CΛ P- Φ tr P- vQ o SD Φ Pt 33 Ω Φ tr SD: • n 3 Hl cn P- Φ Ω 3 CX CL P- 3

Po P- rt 3 et Ω CΛ t SD Φ tr Ω P ¹ vQ Φ Φ Φ o \ ° 3 tr dd Φ Ω CX d: tsi rt tr vQ et 3 vQ P 3 ^* SD: P- P ¹ P ¹ et CL 3 3 P tr d

P sS cx Φ et Φ Φ rt Hl Po Φ P- φ Ω CO SD 3 p ^j φ 3 et 3 SD: d SD vQ vQ 3

P- d C 3 P- Φ SD d: Ω 3 tr O d SD φ 3 3 EP cn CΛ

P- vQ

P CΛ P Φ cn P> SD: 3 P- φ Po 3 tr φ 3 P ¹ P tr Φ ex vQ vQ CO Φ Ω SD CΛ

Φ Ω 3 Hl <! t EP P Φ rt d 3 Φ o P- tr φ

3 tr> d: φ Φ Hl CX P Φ cx

P- P SD: Φ Ω rt ex Φ P * l P Φ P CL Φ CO P- 3 SD CΛ P- φ d CΛ tr P 3 3 P ex φ Ω SD Ω P- vQ Φ P 4-> φ CΛ 1 P ¹ 3

3 cn Φ I CΛ φ 3 "" ^ rt vQ φ 3 Pt 3 tr 3 P- P 1 0 1! _§ 1

1 1 P- φ P- 1 Φ P P- 1 1 tr 1 φ I 1 1 1 rt 1

first area 16-1 of the connection area 16. In addition, this first area 16-1 of the connection layer 16 is formed as an integral part of the leadframe 4, namely of its surface. Furthermore, the second region 16-2 of the connecting layer 16 consists exclusively of tin and thus contains no mixed crystals as in the embodiment in FIG. 2.

Claims

claims

1. Connection device for a circuit arrangement, in particular for a semiconductor module or the like, which is designed to operate at least one circuit unit (2), in particular a chip or the like, of the circuit arrangement (1) with at least one contact device (4) of the circuit arrangement (1) to connect mechanically and / or electrically and to essentially decouple the circuit unit (2) and the contact device (4) thermomechanically, characterized in that the connecting device (10) essentially as a - preferably prefabricated - metallic or alloy area at least partially in the area the circuit unit (2) and / or in the area of the contact device (4) while largely avoiding adhesive elements and solder elements.

2. Connection device according to claim 1, characterized in that at least one buffer area (12), in particular in the form of a layer, is provided, through which thermomechanical tension between the circuit unit (2) and the contact device (4) can be absorbed during operation and thus the circuit unit ( 2) and the contact device (4) can be decoupled thermomechanically.

3. Connection device according to claim 2, characterized in that the buffer area (12) in operation at least with a surface area (12a) thereof as an essentially integral component, in particular as a layer, in an area of the existing structure of the circuit unit (2) and / or Contact device (4) can be formed.

4. Connection device according to one of the preceding claims, characterized in that at least one connection area (16), in particular in the form of a layer, is provided, through which in operation a mechanical and / or electrical connection essentially between the circuit unit (2) and the contact device (4) can be trained.

5. Connection device according to claim 4, characterized in that the connection area (16) in operation with at least one surface area (16b) thereof as an essentially integral component, in particular as a layer, in an area of the existing structure of the contact device (4) and / or the circuit unit (2) is formed.

6. Connecting device according to one of claims 2 to 5, so that the buffer area (12) and the connecting area (16) are directly connected to at least one further surface area (12b, 16a) thereof during operation.

7. Connection device according to one of claims 2 to 5, so that the buffer area (12) and the connection area (16) are mechanically and / or electrically connected to one another during operation via an intended intermediate area (14), in particular via an intermediate layer.

8. Connecting device according to one of claims 2 to 7, characterized in that the buffer area (12), the intermediate portion (14) and / or the connecting portion (16) det layered trained and / or a plurality of metallic and / or ^¬ approximately layers Legie have, so that in operation in the transition from the circuit unit (2) towards the contact device (4) has an essentially layered shape.

9. Connecting device according to one of claims 2 to 8, that the buffer region (12) has aluminum or is essentially formed therefrom.

10. Connecting device according to one of claims 2 to 9, d a d u r c h g e k e n n z e i c h n e t,

- That the connection area (16) has a first area (16-1), which contains silver or is essentially formed therefrom and which is directly connected to the contact device (4) during operation, and - that the connection area (16) has a second one Area

(16-2) which contains gold and tin or is essentially formed therefrom and which, in operation, is arranged on a side facing away from the contact device (4), preferably in connection with the circuit unit (2), if appropriate in a direct manner Connection with an intermediate area (14) or buffer area (12).

11. Connecting device according to one of claims 7 to 10, characterized in that - the intermediate region (14) has a first region (14-1) which contains silver or is essentially formed therefrom and which is connected to the connecting region (16) during operation is and

- That the intermediate region (14) has a second region (14-2) which contains titanium or is essentially formed therefrom and which is connected to the buffer region (12) during operation.

12. Connecting device according to one of claims 2 to 9, characterized in - That the connection area (16) has a first area (16-1) which contains copper or is essentially formed therefrom and which in operation is directly connected to the contact device £ .4), and - that the connection area (16) one second area

(16-2), which contains or is essentially formed from tin and which, in operation, is arranged on a side facing away from the contact device (4), preferably in connection with the circuit unit (2), possibly in direct connection with an intermediate area (14) or buffer area (12).

13. Connecting device according to one of claims 7 to 9 or 12, d a d u r c h g e k e n n z e i c h n e t,

- That the intermediate region (14) has a first region (14-1) which contains copper or is essentially formed therefrom and which is connected to the connecting region (16) during operation, and - that the intermediate region (14) has a second region (14-2) which contains or is essentially formed from titanium and which is connected to the buffer area (12) during operation.

14. Connection device according to one of the preceding claims, characterized in that at least a part of the connection area (16), in particular the first area (16-1) thereof, as part of the contact device (4), in particular the lead frame, and / or as is an integral part of it.

15. Use of a connecting device according to one of claims 1 to 14 in a circuit arrangement, in particular in a semiconductor module or the like, for the mechanical and / or electrical connection of a circuit unit (2), in particular a chip or the like with at least one contact device (4).

16.Circuit arrangement, in particular semiconductor module or the like, with at least one circuit unit (2), in particular a chip or the like, and with at least one contact device (4) for contacting the circuit unit (2), so that the mechanical and / or electrical connection of the

Circuit unit (2) with the contact device (4) at least one connecting device (10) according to one of claims 1 to 14 is provided.