WO2002023600A1

WO2002023600A1 - Ceramic heater for semiconductor manufacturing and inspecting equipment

Info

Publication number: WO2002023600A1
Application number: PCT/JP2001/007456
Authority: WO
Inventors: Yasuji Hiramatsu; Yasutaka Ito; Atsushi Ito; Satoru Kariya
Original assignee: Ibiden Co., Ltd.
Priority date: 2000-09-13
Filing date: 2001-08-30
Publication date: 2002-03-21

Abstract

A ceramic heater for semiconductor manufacturing and inspecting equipment capable of uniformly heating a semiconductor wafer by making uniform the temperature of the entire heated surface of the wafer, comprising a resistance heating element installed on the surface of or inside a ceramic substrate, characterized in that a variation in the resistance value of the resistance heating element with respect to the average resistance value is 25% or less.

Description

Specification

Ceramic heater for semiconductor manufacturing and inspection equipment

TECHNICAL FIELD-The present invention relates to a ceramic heater for semiconductor manufacturing and inspection equipment used in the semiconductor industry. Background art

Semiconductor products are manufactured through processes such as forming a photosensitive resin as an etching resist on a semiconductor wafer and etching the semiconductor wafer.

This photosensitive resin is a liquid and is applied to the surface of the semiconductor wafer using a spin coater or the like.After application, the resin must be dried to disperse the solvent, etc., and the applied semiconductor wafer is placed on a heater. And heat it.

Conventionally, as a metal heater used for such an application, a heater in which a resistance heating element is arranged on the back surface of an aluminum plate has been adopted.

However, such a metal heater has the following problems.

First, since it is made of metal, the thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warpage, distortion, and the like are generated due to thermal expansion caused by heating, and the semiconductor wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased while the force is being applied, the weight of the heater increases, and the heater becomes bulky.

In addition, the heating temperature is controlled by changing the voltage or current applied to the resistance heating element.However, the thickness of the metal plate causes the temperature of the heater plate to quickly change with changes in voltage or current. There was also a problem that it was difficult to control the temperature without following.

Therefore, Japanese Patent Application Laid-Open Nos. Hei 9-136642 and Hei 4-324276 discloses a non-oxide ceramic having high thermal conductivity and high strength as a substrate. A ceramic heater using 1 N and having a resistance heating element formed on the surface or inside of the A 1 N substrate is disclosed.

In addition, Japanese Patent Application Laid-Open No. 11-43030 discloses that a substrate has a high thermal conductivity, Ceramic heaters made of nitride ceramics or carbide ceramics with high strength, and provided with a resistance heating element formed by sintering metal particles on the surface of a plate-like body (ceramic substrate) made of these ceramics It has been disclosed.

As a method of forming a resistance heating element when manufacturing such a ceramic heater, the following method is exemplified.

First, a ceramic substrate having a predetermined shape is manufactured. Thereafter, when a resistance heating element is formed by a coating method, subsequently, a heating element pattern is formed on the surface of the ceramic substrate by using a method such as screen printing. A conductive paste layer was formed, and heating and firing were performed to form a resistance heating element.

When a resistance heating element is formed by a physical vapor deposition method such as sputtering or a plating method, a metal layer is formed on a predetermined region of a ceramic substrate by these methods, and then the heating element pattern is formed. After forming an etching resist so as to cover the portion, an etching process is performed to form a resistance heating element having a predetermined pattern.

Also, first, a portion other than the heating element pattern is covered with a resin or the like, and thereafter, the above-described processing is performed, so that a predetermined pattern of the resistance heating element can be formed on the surface of the ceramic substrate by a single processing. it can. Summary of the Invention

However, although methods such as sputtering and plating can form a precise pattern, the formation of a resistive heating element with a predetermined pattern requires the use of a photolithographic technique on the surface of the ceramic substrate to remove the etching resist. On the other hand, there is a problem that the cost is high because it is necessary to form a resist and the like, but the method using the conductive paste has a relatively low cost by using a method such as screen printing as described above. Although it is possible to form a resistive heating element, it is difficult to form a resistive heating element with a precise pattern if a precise pattern is to be formed. The question There was also a title.

In addition, depending on the heating element pattern, the thickness and width of the printing may vary, causing variations in the resistance value.Using a ceramic heater on which a resistance heating element composed of such a heating element pattern is formed, a semiconductor device may be used. When a wafer or the like is to be heated, the temperature of the entire heated surface of the wafer is not uniform, even if the density of the heating element pattern is uniform throughout. As a result, the temperature difference between the central portion and the outer peripheral portion of the heated semiconductor wafer is increased. There was a problem that occurs.

The present invention has been made in view of the above-described problems, and an object of the present invention is to suppress the variation of the resistance heating element to a certain level or less, thereby enabling the temperature variation within the heating surface during a constant temperature rise transient. It is an object of the present invention to provide a ceramic heater for a semiconductor manufacturing and inspection apparatus capable of suppressing the occurrence of the above.

That is, a first aspect of the present invention is a ceramic heater in which a resistance heating element is provided on the surface or inside of a ceramic substrate, wherein a variation in resistance value with respect to an average resistance value of the resistance heating element is 25% or less. This is a ceramic heater for semiconductor manufacturing and inspection equipment. ,

In addition, the average resistance value is obtained by measuring each resistance value in the divided area by dividing each resistance heating element finely, and calculating the average value of the measured resistance values and the difference between the maximum and minimum of the measured resistance values. The variability was calculated.

For example, as disclosed in Japanese Unexamined Patent Publication Nos. Hei 9-3106442, Hei 4-324276, etc., a resistive heating element having a concentric or spiral pattern is used. When formed, the thickness varies between the area perpendicular to the printing direction and the area parallel to the printing direction. This causes a change in the resistance value, and causes a variation in the temperature of the heated surface.

Further, the pattern portion in the region A of the resistive heating element 42 having the spiral pattern shown in FIG. 1 tends to have a large thickness while the region B has a small thickness. Accordingly, the resistance heating element 42 has a low resistance value in the region A and a high resistance value in the region B, and the amount of generated heat varies.

However, if a repetitive pattern of bending lines is used, the printing direction may vary depending on the location. Because of the variation, thickness variations are reduced.

As described above, in the first aspect of the present invention, the resistance heating element is formed by combining the repetitive pattern of the bent line and another pattern, and the variation of the resistance value of the resistance heating element is adjusted to 25% or less. In addition, it is possible to suppress the temperature variation in the heating surface at the time of a transient temperature rise.

The resistance heating element constituting the ceramic heater for semiconductor manufacturing and inspection equipment according to the first aspect of the present invention is a force composed of a resistance heating element having a repetitive pattern of a bent line, or a concentric or spiral pattern and a repetition of a bent line. It is desirable to use a resistance heating element formed by mixing patterns.

Further, it is preferable that the resistance heating element has a resistance heating element having a repeating pattern of bent lines formed at least on an outer peripheral portion of the ceramic substrate.

This is because the variation of the resistance value with respect to the average resistance value of the resistance heating element is suppressed to 25% or less.

In addition to the method of forming the resistance heating element by combining the repetitive patterns of the bending lines, even if the thickness of the resistance heating element is adjusted by belt sander treatment to adjust the variation of the resistance value of the resistance heating element to 25% or less. Good.

According to a second aspect of the present invention, there is provided a ceramic heater in which a resistance heating element is formed on a ceramic substrate, wherein the resistance heating element is formed with a groove or a notch, and the groove has a thickness of 20 mm. It is a ceramic heater for semiconductor manufacturing and inspection equipment characterized by having a depth of more than 10%.

Since the groove formed by trimming has a depth of 20% or more of the thickness of the resistance heating element, the amount of change in the resistance value due to the trimming is large, and the resistance value can be easily controlled. If the thickness of the resistance heating element is less than 20%, there is almost no change in resistance, and it is difficult to control the resistance value.

More preferably, the groove has a depth of 50% or more of the thickness of the resistance heating element, and more preferably reaches the surface of the ceramic substrate. If a groove reaching the surface of the ceramic substrate is formed, the formed groove completely separates the resistance heating element, and the trimming length and the amount of change in the resistance value are completely linked, so the resistance value Can be controlled more easily.

If the resistance heating element remains at the bottom of the groove formed by the trimming, the resistance value changes depending on the remaining amount, so the trimming length and the amount of change in the resistance value do not interlock accurately, and eventually the resistance value Variation increases. Also, if the resistance heating element remains at the bottom of the groove formed by trimming, the oxidation resistance of the remaining resistance heating element decreases, and the resistance value tends to change with time. However, such a problem does not occur if the trimming groove reaches the bottom of the ceramic substrate.

It is desirable that the groove formed by trimming be stopped at a depth of about 30% of the thickness of the ceramic substrate from the surface of the ceramic substrate. If it exceeds 30%, the strength of the ceramic substrate decreases, and the ceramic substrate warps easily. The width of the heating element pattern is preferably 0.5 mm or more. If the thickness is less than 0.5 mm, it is difficult to perform trimming in parallel with the direction in which the current of the resistance heating element flows.

A third aspect of the present invention is a ceramic heater in which a resistance heating element is formed on a ceramic substrate, wherein the resistance heating element is formed with a groove or a notch, and the surface of the resistance heating element formation surface of the ceramic substrate is roughened. This is a ceramic heater for semiconductor production and inspection equipment, characterized in that Ra ≦ 20 μm.

According to the third aspect of the invention, when forming a groove or a notch in the resistance heating element to adjust the resistance value, the laser light is easily reflected, and the bending strength of the ceramic substrate is reduced and the amount of warpage is reduced. Can be done.

When the surface roughness of the surface of the ceramic substrate on which the resistance heating element is formed is Ra> 20 μm, it becomes difficult to reflect laser light, and a deep groove or the like is formed in the ceramic substrate, so that the ceramic substrate warps. Or the strength is reduced.

More preferably, the surface roughness is Ra ≦ 10 μm. This is because the cooling time can be made within approximately 120 seconds. If the cooling time exceeds 120 seconds, productivity may decrease.

For example, in cooling a ceramic heater, a fluid serving as a refrigerant is sprayed on a surface of a ceramic substrate on which a resistance heating element is formed. At this time, notches or grooves are formed in the resistance heating element Then, turbulence is likely to occur, and if the surface roughness of the surface on which the resistance heating element is formed is large, turbulence is more likely to occur, causing the fluid with heat to stagnate and lower the cooling rate. As described above, by setting the resistance heating element forming surface of the ceramic substrate to R a ≤ 20 m, turbulence can be reduced, thereby improving the temperature lowering rate.

The variation of the resistance value with respect to the average resistance value of the resistance heating element constituting the ceramic heater for semiconductor manufacturing and inspection equipment of the second and third aspects of the present invention is desirably 5% or less.

This is because, even when the resistance heating element is divided into a plurality of circuits and controlled, the number of divisions can be reduced, and as a result, control can be performed easily. If the resistance value of the resistance heating element has a large variation, it is necessary to divide the circuit finely and control the temperature by changing the input power amount for each circuit (channel). Since there is almost no variation, fine division is not required and control becomes easier. Further, since the variation in the resistance value is small, the controllability is improved, and the temperature of the heating surface can be made uniform during the transition of the temperature rise.

In the second and third aspects of the present invention, it is desirable that the grooves are formed substantially in parallel along the direction in which the current of the resistance heating element flows.

As shown in FIG. 2A, if the groove 120 formed by trimming is formed substantially parallel to the direction in which the current ′ of the resistance heating element 12 flows, the resistance value locally increases. Nothing.

Note that the direction of current propagation and the direction of groove formation need not be mathematically parallel, and even if the groove 130 is formed in a curved line as shown in FIG. 2 (b). Often, as shown in FIG. 2 (c), the groove 140 may be formed so as to draw an oblique line with respect to the current propagation direction. In short, it is only necessary that the groove is formed so that the direction in which the groove is formed is parallel to the direction in which the current is propagated, or the angle between the direction in which the current is propagated and the direction in which the groove is formed is an acute angle.

As shown in Fig. 3, the resistance heating element 22 is trimmed perpendicularly to the direction in which the current flows. When the notch 22 a is formed, the resistance value of the portion A of the resistance heating element 22 becomes extremely high, and as shown in Fig. 4, the resistance heating element 22 melts due to heat generation. Resulting in. However, in the present invention, such extreme heat generation does not occur, and damage or the like due to overheating of the resistance heating element does not occur. Furthermore, there is no extreme rise in the resistance value, and the variation in the resistance value can be extremely reduced to 5% or less, preferably 1% or less.

In addition, since the variation in the resistance value of the resistance heating element can be reduced in this way, even when the resistance heating element is divided into a plurality of circuits and controlled, the number of divisions can be reduced and control can be facilitated. Can be. In the case of large variation in resistance value, it is necessary to control the temperature by dividing the circuit into small parts and changing the input power for each circuit (channel). However, in the present invention, there is almost no variation in resistance value. This eliminates the need for fine division and makes it easier to control. Furthermore, it is possible to make the temperature of the heating surface uniform during the transition of the temperature rise. '

Also, when performing trimming with a laser, if the trimming is performed perpendicularly to the direction in which the current of the resistance heating element flows, the surface of the ceramic substrate will be irradiated with the laser, and the ceramic substrate will be discolored, resulting in poor appearance and poor ceramic appearance. As described above, if the grooves are formed substantially parallel to the direction in which the current flows through the resistance heating element, the discolored portion will not only be hidden but also generate excess heat, as described above. Since energy is not transmitted to the ceramic substrate, a decrease in strength can be prevented.

According to the second and third aspects of the present invention, since the resistance heating element is formed on the ceramic substrate using a conductor paste made of a metal or a metal and an oxide, trimming is particularly performed by laser light. This is because the metal is evaporated and removed by the laser, but the ceramic is not removed. Therefore, it is completely different from laser trimming on a semiconductor wafer or a printed wiring board, and it is not necessary to adjust the laser beam output, and it is possible to realize accurate trimming without removing residues. Also, since it is a ceramic substrate, there is no warping or significant decrease in strength. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is an explanatory diagram showing a printing direction when producing a resistance heating element having a spiral pattern.

FIG. 2 is a perspective view schematically showing a resistance heating element in which a groove formed by trimming is formed substantially parallel to the direction in which current flows.

FIG. 3 is a perspective view schematically showing a resistance heating element having a groove formed by trimming perpendicular to the direction in which current flows.

Figure 4 is a photograph showing the molten resistance heating element.

FIG. 5 is a plan view schematically showing a pattern of a resistance heating element in the ceramic heater of the present invention.

FIG. 6 is a partially enlarged sectional view of the ceramic heater shown in FIG.

FIG. 7 is an explanatory diagram showing a printing direction when producing a resistance heating element having a repeating pattern of bent lines. '

FIG. 8 is a bottom view schematically showing a ceramic heater on which a resistance heating element formed by combining a spiral pattern and a repeating pattern of bent lines is formed.

FIG. 9 is a bottom view schematically showing a ceramic heater on which a resistance heating element having a concentric pattern is formed.

FIG. 10 is a bottom view schematically showing a ceramic heater on which a resistance heating element having a repeating pattern of bent lines is formed.

FIG. 11 is a perspective view showing how a resistance heating element is divided into a plurality of regions in order to measure a resistance value.

FIG. 12 is a block diagram showing an outline of a laser trimming apparatus used when manufacturing the ceramic heater of the present invention.

FIG. 13 is a perspective view schematically showing a table constituting the laser trimming apparatus shown in FIG.

(A) to (d) of FIG. 14 are cross-sectional views showing each step of manufacturing the resistance heating element of the present invention.

FIG. 15 shows a ceramic heater in which the ceramic heater of the present invention is housed in a holding container. It is sectional drawing which shows a knit typically.

Figures 16 (a) to (d) show the grooves reaching the ceramic substrate at 30%, 60%, and 90% of the thickness of the resistance heating element, respectively. Is a graph showing the shape (height and position) of the cross section, and the lower part is a cross-sectional view taken along the arrow in FIG. 11 in the upper part.

Figure 17 is a graph showing the cross-sectional shape (position and height) of the resistance heating element. Explanation of reference numerals

4, 34

5, 35 Through hole

1 1, 3 1, 6 1 Ceramic substrate

1 1a heated surface

l i b bottom

1 2 (1 2 a to 12 g), 32, 42, 52, 62 (6 2 a to 6 2 d) Resistance Heating element

1 2m conductor layer (resistance heating element)

1 3 tape / record.

1 3 a Mating protrusion

1 3 b Fixing protrusion

14 Laser irradiation equipment

1 5 Galvanometer mirror

1 Control unit

1 8 Memory

1 9 Operation section

20 Input section

2 1 Camera

22 Laser light

30 Ceramic heater 3 3 External terminal

3 6 Lifter ^ "pin

3 9 Semiconductor wafer Detailed disclosure of invention

First, the first present invention will be described based on the embodiment. However, the ceramic heater for a semiconductor manufacturing and inspection device of the first present invention has a variation in resistance value with respect to the average resistance value of the resistance heating element. If it is 5% or less, it is not limited to this embodiment. The ceramic heater for semiconductor manufacturing and inspection equipment according to the first embodiment of the present invention is a ceramic heater in which a resistance heating element is provided on the surface or inside of a disk-shaped ceramic substrate,

The above-mentioned resistance heating element has a repetitive pattern of bent lines, or the thickness of the resistance heating element is adjusted, and the variation with respect to the average resistance value is 25% or less. Ceramic heater.

In the following description, the ceramic heater for semiconductor manufacturing and inspection equipment will be simply referred to as a ceramic heater.

According to the ceramic heater, the resistance heating element is formed by repeating a bent line pattern (see FIG. 10) or a concentric or spiral pattern and a pattern formed by a bent line. Therefore (see Fig. 5), it is possible to suppress a decrease in the temperature of the outer peripheral portion as compared with the case where a concentric or spiral shaped patterned resistance heating element is formed on the entire ceramic substrate. As a result, the temperature of the entire wafer heating surface becomes uniform, so that the semiconductor wafer and the like can be uniformly heated. Further, in the pattern composed of the bent lines or the repeated pattern of the bent lines, as shown in FIG. 7, due to the presence of the bent portion, not only a portion parallel to the printing direction but also a portion perpendicular to the printing direction occurs. When the resistance heating element is parallel to the printing direction (D part in Fig. 7 and B part in Fig. 1), when forming the resistance heating element, the squeegee comes into line contact with the periphery of the mask opening, so metal particles Is difficult to fill into the opening of the mask. On the other hand, when the resistance heating element is perpendicular to the printing direction (part C in FIG. 7 and part A in FIG. 1), When the resistive heating element is formed, since the squeegee makes surface contact with the peripheral portion of the opening of the mask, the metal particles can easily fill the opening of the mask. Therefore, by having both the portion C when the heating element is perpendicular to the printing direction and the portion D parallel to the printing direction, metal particles can be filled in the mask opening and the variation in resistance value can be reduced. The heating element pattern is not limited to the above-mentioned pattern. For example, a spiral shape as shown in FIGS. 9 and 1 may be used. In this case, the portion perpendicular to the printing direction is a belt sander. It is necessary to adjust the thickness by polishing the surface with, for example. The thickness of the ceramic substrate is desirably 25 mm or less. If it exceeds 25 mm, the heat capacity becomes too large, the heat transfer takes time, and the temperature of the heating surface (the side opposite to the surface on which the resistance heating element is formed) is unlikely to be uneven, as in the first invention. This is because there is no need to control the variation in resistance value. However, the responsiveness to the input power is extremely reduced.

More preferably, the thickness is more than 1.5 mm and 5 mm or less. If the thickness is more than 5 mm, heat is difficult to propagate, and the heating efficiency tends to decrease.On the other hand, if the thickness is less than 1.5 mm, the heat propagating through the ceramic substrate will not be sufficiently diffused, so heating will not occur. This is because temperature variations may occur on the surface and the strength of the ceramic substrate may be reduced to cause breakage.

The diameter of the ceramic substrate should preferably exceed 19 O mm, more preferably 200 mm or more. This is because a substrate with a larger diameter is more likely to have a nonuniform heating surface temperature. In addition, a substrate having such a large diameter can be provided with a semiconductor wafer having a large diameter.

The diameter of the ceramic substrate is preferably at least 12 inches (300 mm '). This is because it will become the mainstream of next generation semiconductor wafers.

The porosity of the ceramic substrate is preferably 5% or less. Since the ceramic substrate having a high porosity has a low thermal conductivity, it takes a long time for heat transfer, and the temperature of the heating surface (the side opposite to the surface on which the resistance heating element is formed) is less likely to be uneven. This is because it is not necessary to control the variation of the resistance value. However, the responsiveness to the input power is extremely reduced. The ceramic heater according to the first aspect of the present invention uses a non-oxide ceramic such as a nitride ceramic or a carbide ceramic or an oxide ceramic as a ceramic substrate, and forms an insulating layer on the surface of the non-oxide ceramic substrate. Oxide ceramics can also be used. Nitride ceramics have a tendency to decrease in volume resistance at high temperatures due to oxygen solid solution, etc.Carbide ceramics are not particularly highly purified! It has electrical conductivity, and oxide ceramics are used as an insulating layer. This is because the formation can prevent a short circuit between circuits even at high temperatures or even when impurities are contained, thereby ensuring temperature controllability.

In addition, non-oxidizing ceramics are suitable for heaters because they have high thermal conductivity, so that the temperature can be raised and lowered quickly and the temperature can be easily controlled. On the other hand, since the thermal conductivity is high, temperature variations due to the heating element pattern are likely to occur, and the configuration of the first present invention is particularly advantageous as compared with oxide ceramics.

The surface on the opposite side (hereinafter referred to as the bottom) of the heating surface of the ceramic substrate has a surface roughness

Ra is preferably 20 m or less.

Examples of the nitride ceramic forming the ceramic substrate include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like.

Examples of the carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tansten carbide, and the like.

Note that an oxide ceramic may be used as the ceramic substrate, and alumina, silica, cordierite, mullite, zirconia, beryllia, or the like can be used.

These may be used alone or in combination of two or more.

Non-oxide ceramic substrates such as the nitride ceramics and carbide ceramics described above have high thermal conductivity, and the temperature of the heating surface of the ceramic substrate can quickly follow the temperature change of the resistance heating element. The surface temperature can be controlled well, and the mechanical strength is high, so the heater plate does not warp. It is possible to prevent the semiconductor wafer mounted thereon from being damaged.

Of the above-mentioned nitride ceramics, aluminum nitride is the most preferred. This is because the thermal conductivity is the highest at 18 O W / m · K.

FIG. 5 is a bottom view schematically showing an example of the first ceramic heater of the present invention, and FIG. 6 is a partially enlarged sectional view showing a part thereof.

A ceramic substrate 11 made of a ceramic substrate such as a nitride ceramic, a carbide ceramic, or an oxide ceramic (hereinafter, referred to as a nitride ceramic substrate) is formed in a disc shape, and has a heating surface of the ceramic substrate 11. In order to heat the entire 11a so that the entire temperature is uniform, a resistive heating element 12 (12e to 12g) with a concentric pattern is formed inside the bottom of the ceramic substrate 11. On the other hand, on the outer peripheral portion of the ceramic substrate 11, resistance heating elements 12 (12a to 12d) having a repeating pattern of bent lines are formed.

The inner resistance heating elements 12 e to l 2 g are connected such that double concentric circles close to each other form a single line. Further, the resistance heating element 12 is covered and protected by a metal coating layer 1200, and an external terminal 33 has a solder layer (not shown) or the like at an end of the resistance heating element 12. Connected through. In a portion near the center, a through hole 35 is formed for passing a lifter pin 36 for supporting and transporting the semiconductor wafer 39, and a bottomed hole for inserting a temperature measuring element. A hole 34 is formed.

In the first ceramic heater 30 of the present invention, an object to be heated such as a semiconductor wafer 39 is placed and heated while being in contact with the heating surface 11 a of the ceramic substrate 11. A recess or through hole is formed in the recess, and a pin having a spire or hemispherical tip is inserted and fixed into the recess with the tip slightly protruding from the surface of the ceramic substrate. The heated skin material may be held at a certain distance from the ceramic substrate by supporting the heated skin material with the support pins.

The distance between the heating surface and the wafer is preferably 5 to 500 μπι.

Also, by inserting a lifter pin into the through-hole and raising and lowering the lifter pin 36, an object to be heated such as a semiconductor wafer 39 can be received from the transfer machine, or the object to be heated can be received. Can be placed on the ceramic substrate 11 or heated while supporting the object to be heated.

In the ceramic heater 30 shown in FIGS. 5 and 6, the resistance heating element 12 is provided at the bottom of the ceramic substrate 11, but may be provided inside the ceramic substrate 11. Even when the resistance heating element 12 is provided inside the ceramic substrate 11, the pattern of the resistance heating element 12 is formed in the same manner.

In the first ceramic heater 30 of the present invention, ceramic such as nitride is used as the material of the ceramic substrate. This is because the ceramic heater has a smaller coefficient of thermal expansion than metal, and even if thinner, warps due to heating. This is because the ceramic substrate 11 can be made thin and light because it is not distorted.

Also, since the thermal conductivity of the ceramic substrate 11 is high and the ceramic substrate itself is thin, the surface temperature of the ceramic substrate 11 quickly follows the temperature change of the resistance heating element.

. That is, the surface temperature of the ceramic substrate 11 can be controlled well by changing the voltage and the current amount to change the temperature of the resistance heating element.

In the ceramic heater shown in FIGS. 5 and 6, spiral resistance heating elements 12 e to l 2 g are formed on the inner side, but the resistance heating elements may be concentric.

On the other hand, although the resistance heating elements 12 a to l 2 d are formed in the outer peripheral portion in a repeating pattern of the bent line, the degree of the repeated bending of the bent line is large even if the number per unit length is large. Good. That is, the resistance heating elements 12a to l2d shown in FIG. 5 may be bent more frequently.

FIG. 10 discloses a ceramic heater 70 consisting only of a repeating pattern of bent lines. Since the ceramic heater 70 includes only the resistance heating elements 72 a to 72 h each having a bent line pattern, it is possible to reduce the variation in the resistance value when printing metal particles. In addition, in the case of a hybrid pattern of a bent line repetition pattern and a spiral or concentric pattern, it is preferable that the bent line repetition pattern be formed at a radius of 1Z2 or more outside the center. This is because concentric circles and swirl arcs tend to be parallel to the printing direction in a region that is more than 1/2 radius away from the center, and the resistance varies widely. Further, in the first aspect of the present invention, since it is sufficient that at least the outer peripheral portion has a repetition pattern of the bending line, the repetition of the bending line is formed between the resistance heating elements formed of the inner spiral pattern and the concentric pattern. It may have a resistive heating element composed of a pattern.

It is desirable that the resistance heating element 12 formed on the surface or inside of the ceramic substrate such as nitride be divided into at least two or more circuits as shown in FIG. This is because, by dividing the circuit, the amount of heat generated can be changed by controlling the power supplied to each circuit, and the temperature of the heating surface of the semiconductor wafer can be adjusted. When the resistance heating element 12 is formed on the surface of the ceramic substrate 11, a conductive paste containing metal particles is applied to the surface of the ceramic substrate 11 to form a conductor base layer having a predetermined pattern. Is preferable, and metal particles are sintered on the surface of the ceramic substrate 11. The sintering of the metal is sufficient if the metal particles are fused together with the ceramic.

In the case of forming the resistor Tsutomunetsu body ceramic substrate 1 1 surface, the thickness of the resistance heating elements is preferably _1~3 0 μ ιη, more preferably 1 to 1 0 / im. When a resistance heating element is formed inside the ceramic substrate 11, the thickness thereof is preferably 1 to 50 μπι.

When a resistance heating element is formed on the surface of the ceramic substrate 11, the width of the resistance heating element is preferably 0.1 to 20 mm, more preferably 0.1 to 5 mm. When a resistance heating element is formed inside the ceramic substrate 11, the resistance heating element preferably has a thickness of 5 to 20 μm.

Although the resistance value of the resistance heating element 12 can be varied depending on its width and thickness, the above range is most practical. The resistance becomes thinner and thinner, and becomes larger. When the resistance heating element 12 is formed inside the ceramic substrate 11, the thickness and width are larger, but when the resistance heating element 12 is provided inside, the heating surface and the resistance heating element 1 2 And the uniformity of the temperature of the surface is reduced, so the width of the resistance heating element itself must be increased.In order to provide the resistance heating element 12 inside, it is necessary to use a ceramic such as nitride. Since there is no need to consider the adhesion of High melting point metals such as lipden can be used, and carbides such as tungsten and molybdenum can be used, and the resistance value can be increased. Therefore, the thickness itself can be increased to prevent disconnection. Therefore, it is desirable that the resistance heating element 12 has the above-mentioned thickness and width.

The resistance heating element 12 may have a rectangular or elliptical cross section, but is preferably flat. This is because the flattened surface tends to radiate heat toward the heated surface of the wafer, making it difficult to achieve a temperature distribution on the heated surface.

It is desirable that the aspect ratio of the cross section (the width of the resistance heating element and the thickness of the resistance heating element) be 10 to 500.

By adjusting to this range, the resistance value of the resistance heating element 12 can be increased, and the uniformity of the temperature of the heating surface can be ensured. When the thickness of the resistance heating element 12 is constant, if the aspect ratio is smaller than the above range, the amount of heat propagation in the wafer heating direction of the ceramic substrate 11 decreases, and the resistance heating element 12 Heat distribution similar to the above pattern occurs on the heating surface. Conversely, if the aspect ratio is too large, the temperature immediately above the center of the resistance heating element 12 becomes high, resulting in resistance heating. A heat distribution similar to the pattern of the body 12 occurs on the heated surface. Therefore, in consideration of the temperature distribution, the aspect ratio of the cross section is preferably 10 to 500.

When the resistance heating element 12 is formed on the surface of the ceramic substrate 11, the aspect ratio is 10 to 200. When the resistance heating element 12 is formed inside the ceramic substrate 11, the aspect ratio is It is desirable that the ratio be between 200 and 500.

When the resistance heating element 12 is formed inside the ceramic substrate 11, the aspect ratio is higher. However, when the resistance heating element 12 is provided inside, the resistance to the heating surface is reduced. This is because the distance from the heating element 12 becomes shorter, and the temperature uniformity of the surface decreases, so that the resistance heating element 12 itself needs to be flattened.

When the resistance heating element 12 is formed eccentrically inside the ceramic substrate 11, the position is close to the surface (bottom surface) facing the heating surface of the ceramic substrate 11, and the distance from the heating surface to the bottom surface Above 50% and up to 99% If it is less than 50%, the temperature distribution is generated because it is too close to the heated surface. Conversely, if it exceeds 99%, the ceramic substrate 11 itself warps and the semiconductor wafer is damaged. It is because it is damaged.

When the resistance heating element 12 is formed inside the ceramic substrate 11, a plurality of resistance heating element forming layers may be provided. In this case, the pattern of each layer is such that the resistive heating element 12 is formed on some layer so as to capture each other, and when viewed from above the wafer heating surface, the pattern is formed on any area. Is desirable. As such a structure, for example, there is a structure in which the staggered arrangement is provided.

Note that the resistance heating element 12 may be provided inside the ceramic substrate 11, and the resistance heating element 12 may be partially exposed.

The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramic for ensuring conductivity, but also a resin, a solvent, a thickener, and the like.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively hard to oxidize and have sufficient resistance to generate heat.

Examples of the conductive ceramic include tungsten and molybdenum carbide. These may be used alone or in combination of two or more. The particle diameter of the metal particles or conductive ceramic particles is preferably 0.1 to 100 μm. If it is too fine, less than 0.1 ^ πι, it is liable to be oxidized, while if it exceeds Ο Ο μππι, it becomes difficult to sinter, not only increases the resistance but also makes it difficult to print. It may be spherical or scaly. When these metal particles are used, they may be a mixture of the sphere and the flakes. When the metal particles are flakes or a mixture of spheres and flakes In addition, it is easy to hold the oxide particles between the metal particles, it is possible to secure the adhesion between the resistance heating element 12 and ceramics such as nitrides, and to increase the resistance value, which is advantageous. is there. ■

Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol, butyl carbitol, diethylene ether monoether, and the like. Examples of the thickener include cellulose.

It is preferable that the conductor paste is made by adding a metal oxide (glass frit) to metal particles and sintering the resistance heating element, the metal particles, and the metal oxide. Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate, such as a nitride ceramic, and the metal particles can be more closely adhered. It is not clear why the mixing with the metal oxide improves the adhesion with the nitride ceramic, etc., but the surface of the metal particles and the surface of the nitride ceramic, etc. are slightly oxidized to form an oxide film. It is considered that these oxide films are sintered together via the metal oxide to be integrated, and the metal particles and the nitride ceramics are brought into close contact with each other. Also, when the ceramic constituting the ceramic substrate is an oxide ceramic, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed. The metal oxide, for example, lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, Shi preferred is at least one selected from the group consisting of yttria and titania les.

This is because these oxides can improve the adhesion between metal particles and ceramics such as nitrides without increasing the resistance value of the resistance heating element 12.

The lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, Itsutori §, the proportion of titania, when the 1 0 0 parts by weight of the total amount of metal Sani匕物, by weight, Lead oxide 1 ~ 10, silica 1 ~ 30, boron oxide 5 ~ 50, zinc oxide 20 ~ 70, alumina 1 ~ 10, yttria :! Preferably, the titania is 1 to 50, and the total is adjusted so as not to exceed 100 parts by weight. By adjusting the amount of these oxides within these ranges, especially nitrides Can be improved in adhesion to ceramic.

The addition amount of the above-mentioned oxidized product to the metal particles is 0.1% by weight or more and 1 ° by weight. It is preferably less than / ₀ . Further, when the resistance heating element 12 is formed using the conductor paste having such a configuration, the area resistivity is preferably 1 to 5 Om QZ port.

If the sheet resistivity exceeds 5ΟπιΩ / port, the amount of heat generated is too large for the applied voltage, and the heat generated on the ceramic substrate 11 provided with the resistance heating element 12 on the surface of the ceramic substrate This is because it is difficult to control the amount. If the addition amount of the metal oxide is 10% by weight or more, the sheet resistivity exceeds 5ΟπιΩ / port, and the calorific value becomes too large to make temperature control difficult. The uniformity of distribution is reduced.

If necessary, the sheet resistivity can be set to 5ΟηαΩ / port to 10Ω〜port. If the sheet resistance is increased, the width of the pattern can be increased, so that there is no problem of disconnection.

When the resistance heating element 12 is formed on the surface of the ceramic substrate 11, it is desirable that a metal coating layer 1200 is formed on the surface of the resistance heating element 12. This is to prevent the internal metal sintered body from being oxidized to change the resistance value. The thickness of the formed metal coating layer 1200 is preferably 0.1 to 10 μπι.

The metal used for forming the metal coating layer 1200 is not particularly limited as long as it is a non-oxidizing metal, and specifically, for example, gold, silver, palladium, platinum, nickel, etc. No. These may be used alone or in combination of two or more. Of these, nickel is preferred. Further, as the coating layer, an inorganic insulating layer such as glass, a heat-resistant resin, or the like can be used.

The resistance heating element 12 needs a terminal to connect to the power supply, and this terminal is attached to the resistance heating element 12 via solder, but nickel prevents heat diffusion of the solder. . Examples of the connection terminal include an external terminal 33 made of Kovar.

When the resistance heating element 12 is formed inside the ceramic substrate 11, no coating is necessary because the surface of the resistance heating element is not oxidized. When the resistance heating element 12 is formed inside the ceramic substrate 11, part of the resistance heating element is exposed on the surface. Alternatively, a through hole for connecting the resistance heating element 12 may be provided in the terminal portion, and an external terminal may be connected and fixed to the through hole.

When connecting the external terminals 33, alloys such as silver-lead, lead-tin, and bismuth-tin can be used as the solder. The thickness of the solder layer is preferably from 0.1 to 50 / m. This is because the range is sufficient to secure connection by soldering. Also, as shown in FIG. 6, a through hole 35 is provided in the ceramic substrate 11 and a lifter pin 36 is inserted into the through hole 35 to transfer the semiconductor wafer to a carrier (not shown), From a semiconductor wafer.

The side of the ceramic substrate opposite to the surface on which the resistance heating element is formed is the heating surface of the object to be heated. · In the first aspect of the present invention, a thermocouple can be embedded in the ceramic substrate as needed. This is because the temperature of the resistance heating element is measured by a thermocouple, and the temperature and the amount of current can be changed based on the data to control the temperature.

The size of the junction of the metal wires of the thermocouple is the same as the wire diameter of each metal wire, or

It should be larger and less than 0.5 mm. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. Therefore, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced.

Examples of the thermocouple include K-type, R-type, B-type, S-type, E-type, J-type, and T-type thermocouples as described in, for example, JIS-C-162 (1980). Pairs. Next, a method for manufacturing the first ceramic heater will be described.

First, a method of manufacturing a ceramic heater (see FIGS. 5 and 6) in which a resistance heating element is formed on the bottom surface of a ceramic substrate 11 will be described.

A · Ceramic heater with resistance heating element formed on the bottom of ceramic substrate (1) Ceramic substrate manufacturing process

Sintering aids ₄ C such yttria (Y ₂ 0 ₃₎ and B as needed to ceramic powders such as nitrides such as nitride Arumiyuumu Ya silicon carbide mentioned above, N a, compounds containing C a, After preparing a slurry by blending a binder and the like, the slurry is granulated by a method such as a spray drier, and the granules are placed in a mold or the like and pressed to form a plate. To form a green body.

Next, if necessary, a part to be a through hole for inserting a lifter pin for supporting a semiconductor wafer and a part to be a bottomed hole for embedding a temperature measuring element such as a thermocouple are formed in the formed body. . The through hole and the bottomed hole can be formed after the formed body is fired.

Next, the formed body is heated, fired and sintered to produce a ceramic plate. Thereafter, the ceramic substrate 11 is manufactured by processing into a predetermined shape, but the ceramic substrate 11 may be used as it is after firing. By performing heating and baking while applying pressure, it is possible to manufacture a ceramic substrate 11 having no pores. The heating and sintering may be performed at a temperature equal to or higher than the sintering temperature. In the case of oxide ceramics, the temperature is 150 ° C. to 200 ° C.

Usually, after firing, a through hole and a bottomed hole for inserting a temperature measuring element are provided. The through-holes or the like can be formed by performing a drilling process such as sandblasting using SiC particles or the like after surface polishing.

(2) Process of printing conductive paste on ceramic substrate

The conductor paste is generally a high-viscosity fluid composed of metal particles, a resin, and a solvent. The conductor paste is printed on the portion where the resistance heating element is to be provided by screen printing or the like to form a conductor paste layer. The resistance heating element is printed in a combination pattern of concentric circles and bent lines as shown in Fig. 5 because the temperature of the entire ceramic substrate needs to be uniform.

The conductor paste layer is desirably formed so that the cross section of the resistance heating element 12 after firing has a rectangular and flat shape.

Further, when the pattern is a concentric circle or a spiral pattern, a portion perpendicular to the printing direction is polished with a belt sander to make the thickness uniform.

(3) Baking of conductive paste

The conductor paste layer printed on the bottom surface of the ceramic substrate 11 is heated and fired to remove the resin and the solvent, and at the same time, sinters the metal particles. To form a resistance heating element 12. The heating and firing temperature is preferably from 500 to 100 ° C.

If the above-mentioned acid is added to the conductor paste, the metal particles and the ceramic substrate oxide will sinter and be integrated, so that the adhesion between the resistance heating element and the ceramic substrate will be improved. Is improved.

(4) Formation of metal coating layer

It is desirable to provide a metal coating layer 1200 on the surface of the resistance heating element 12. The metal coating layer 1200 can be formed by electrolytic plating, electroless plating, sputtering, or the like, but in consideration of mass productivity, electroless plating is optimal. Further, instead of a metal, it may be covered with a cover such as glass or resin.

(5) Installation of terminals, etc.

Attach the terminal (external terminal 33) for connection to the power supply to the end of the pattern of the heating element 12 by soldering. In addition, a thermocouple is fixed to the bottomed hole 34 with silver brazing, gold brazing, or the like, and sealing is performed with a heat-resistant resin such as polyimide, thereby completing the manufacture of the ceramic heater.

Next, a method of manufacturing a ceramic heater in which a resistance heating element 12 is formed inside a ceramic substrate 11 will be described.

B. Ceramic heater with resistance heating element formed inside ceramic substrate

(1) Manufacturing process of ceramic substrate

First, a ceramic powder such as a nitride is mixed with a binder, a solvent and the like to prepare a paste, which is used to produce a green sheet.

Aluminum nitride or the like can be used as the ceramic powder such as nitride described above, and a sintering aid such as yttria or a compound containing Na or Ca may be added as necessary. Les ,.

Further, as the binder, at least one selected from acryl-based binder, ethyl cellulose, butyl cellulose-based solve, and polybutyl alcohol is preferable. Further, as the solvent, at least one selected from α-terbineol and glycol is desirable.

The paste obtained by mixing these is formed into a sheet by the doctor blade method. To produce a green sheet.

The thickness of the green sheet is preferably from 0.1 to 5 mm.

Next, if necessary, the obtained green sheet will be a part that becomes a through hole for inserting a lifter pin for supporting a semiconductor wafer, and a bottomed hole for embedding a temperature measuring element such as a thermocouple. A part, a part to be a through hole for connecting a resistance heating element to an external end pin, etc. are formed. The above processing may be performed after forming a green sheet laminate described later.

(2) Process of printing conductor paste on green sheet

A metal paste for forming a resistance heating element or a conductive paste containing a conductive ceramic is printed on the green sheet. The printing pattern at this time is desirably a combination pattern of concentric circles and bent lines as shown in FIG. These conductive pastes contain metal particles or conductive ceramic particles.

The average particle size of the tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. If the average particle size is less than 0.1 μππ, if it exceeds 5 m, it will be difficult to print the conductive paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; at least one kind of binder selected from acrylonitrile-based, ethylcellulose, sorbitol, and polyvinyl alcohol 1. 5 to 10 parts by weight; and a fibrous material (paste) obtained by mixing 1.5 to 10 parts by weight with at least one solvent selected from α-terbineol and glycol.

(3) Green sheet lamination process

Laminate green sheets without conductor paste printed on top and bottom of the green sheets with conductor paste printed.

At this time, the number of green sheets stacked on the upper side is made larger than the number of green sheets stacked on the lower side, and the formation position of the resistance heating element is eccentric toward the bottom. Specifically, the number of stacked green sheets on the upper side is preferably 20 to 50, and the number of stacked green sheets on the lower side is preferably 5 to 20. (4) Green sheet laminate firing process

The green sheet laminate is heated and pressed to sinter the green sheet and the internal conductor paste.

The heating temperature is preferably from 100 to 200 ° C., and the pressure is preferably from 100 to 200 kg / cm ² . Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

After firing, a bottomed hole for inserting a temperature measuring element may be provided. The bottomed hole can be formed by blasting sand blast or the like after surface polishing. Also, connect an external terminal to the through hole for connecting to the internal resistance heating element, and heat it to reflow. The heating temperature is preferably from 200 to 500 ° C.

In addition, a thermocouple as a temperature measuring element is attached with silver brazing or gold brazing, etc., sealed with polyimide or other heat-resistant resin, and production of the ceramic heater is completed.

Next, the second and third ceramic heaters of the present invention will be described.

A ceramic heater according to a second aspect of the present invention is a ceramic heater in which a resistance heating element is formed on a ceramic substrate, wherein the resistance heating element has a groove or notch, and the depth of the groove is equal to the resistance. This is a ceramic heater characterized in that it is 20% or more of the thickness of the heating element.

The ceramic heater according to the third aspect of the present invention is a ceramic heater in which a resistance heating element is formed on a ceramic substrate, wherein the resistance heating element has a groove or a notch formed therein. The ceramic heater is characterized in that the surface roughness of the body forming surface is Ra 20 μm.

The ceramic heater according to the second aspect of the present invention is characterized in that the depth of the groove formed in the resistance heating element is at least 20% of the thickness of the resistance heating element, and the ceramic heater according to the third aspect of the invention. The characteristic of the cook heater is that the surface roughness of the surface of the ceramic substrate on which the resistance heating element is formed is Ra≤20 um. Therefore, in the following description, the second invention and the third invention will be described at the same time, and the features of each invention will be individually described therein. And

The second and third ceramic heaters of the present invention have a heating surface on the side opposite to the surface on which the resistance heating element is formed, and the resistance value is adjusted by forming a groove or notch by trimming in the resistance heating element. The temperature distribution on the heating surface becomes uniform.

The notch is a kind of notch formed to locally reduce the width of the resistance heating element. By making a notch, the width of the resistance heating element is locally reduced and the resistance value is adjusted. Is what you do. The difference is that the groove does not form a cut on the side, whereas the notch forms a cut on the side.

In the ceramic heater having such a configuration, the variation in the resistance value can be reduced, and the reduction in the resistance to oxidation of the resistance heating element can be prevented. Further, the strength of the ceramic substrate is not reduced.

In the ceramic heater according to the second aspect of the present invention, since the groove formed in the resistance heating element has a depth of 20% or more of the thickness of the resistance heating element, the amount of change in the resistance value due to trimming is large, and the resistance value is controlled. Can be easily performed. If the thickness is less than 20% of the resistance heating element thickness, there is almost no change in resistance, and it is difficult to control the resistance value. More preferably, the groove has a depth of 50% or more of the thickness of the resistance heating element, and more preferably reaches the surface of the ceramic substrate. If a groove reaching the surface of the ceramic substrate is formed, the formed groove completely separates the resistance heating element, and the trimming length and the amount of change in the resistance value are completely linked, so that the resistance value can be controlled more. It can be done easily.

Further, when a groove is also formed in the ceramic plate, it is desirable that the depth is within 30% of the thickness of the ceramic substrate. If it exceeds 30%, the strength of the ceramic substrate is reduced, and the ceramic substrate is likely to be warped.

In the ceramic heater according to the third aspect of the present invention, the groove formed in the resistance heating element may have a depth of 20% or more of the thickness of the resistance heating element for the same reason as in the second aspect of the invention. More preferably, it has a depth of 50% or more of the thickness of the resistance heating element, and more preferably reaches the surface of the ceramic substrate. If a groove is also formed in the ceramic substrate, the depth is set to the thickness of the ceramic substrate. It is desirable to be within 30% of the value.

In the second and third aspects of the present invention, it is preferable that the groove is formed substantially parallel to a direction in which a current flows through the resistance heating element.

The trimming is formed on the surface (upper surface) of the resistance heating element. If a trimming groove is formed on the side surface of the resistance heating element, there will be a portion where the resistance value is locally increased, and the resistance heating element will be melted during heat generation. 2 (a) to 2 (c) are perspective views schematically showing the resistance heating element 12 when the surface of the resistance heating element is trimmed substantially parallel to the direction of current flow. The grooves 120, 130, 140 formed by trimming are straight or curved as shown in FIG. 2, but a plurality of such straight or curved grooves are formed. You may.

Further, when the resistance heating element is formed in a shape drawing an arc, trimming the inner peripheral side of the circular resistance heating element can greatly change the resistance value. This is because the current flows more easily toward the inner circumference.

In the second and third aspects of the present invention, regarding the variation in the resistance value of the resistance heating element, the variation in the resistance value with respect to the average resistance value is preferably 5% or less, more preferably 1%. By reducing the variation in this way, even when the resistance heating element is divided into a plurality of circuits and controlled, the number of divisions can be reduced and control can be facilitated. Further, it is possible to make the temperature of the heating surface uniform during the transition of the temperature rise. If the variation of the resistance value of the resistance heating element exceeds 5%, the uniformity of the temperature within the heating surface at the regular time is poor, and the uniformity of the temperature within the heating surface during the transition such as during the temperature rise is also poor. Furthermore, variations in the resistance value of the resistance heating element should be suppressed to 25% or less by making the thickness and width etc. uniform when printing the resistance heating element, and further adjusted to 5% or less by trimming. Is desirable. This is because the adjustment by trimming is smoother if the variation is reduced at the printing stage of the resistance heating element.

The width of the groove is preferably about 1 to 100 μm, more preferably about 1 to 100 m. If the width exceeds 100 μππι, disconnection or the like is likely to occur, while if the width is less than 1 / xm, it is difficult to adjust the resistance value of the resistance heating element. The spot diameter of the laser beam is 1π! It is desirable to adjust at ~ 2 cm, 5 0 11! ~ 2 cm It is more desirable to adjust with.

It is desirable that the trimming be performed by measuring the resistance value of the resistance heating element and based on the measured value. This is because the resistance value can be accurately adjusted.

As shown in Fig. 1, for example, the resistance value is measured by dividing the resistance heating element pattern from 1: _ to ₁₆ and measuring the resistance value for each section. Then, a trimming process is performed on a section having a low resistance value.

After the trimming process is completed, the resistance value measurement may be performed again, and if necessary, further trimming may be performed. In other words, resistance measurement and trimming may be performed not only once but also two or more times.

It is desirable to perform the trimming after printing the resistance heating element paste and firing it. This is because the resistance value fluctuates due to firing, and if trimming is performed before firing, peeling may occur due to irradiation with laser light.

Alternatively, the resistive heating element paste may be first printed in a planar shape (so-called solid shape) and then patterned by trimming. If you try to print in a pattern from the beginning, the thickness will vary depending on the printing direction.However, if you print in a plane, you can print with a uniform thickness, so trim it and pattern it. Thereby, a heating element pattern having a uniform thickness can be obtained.

The trimming can be performed using laser light irradiation or polishing treatment such as sand blasting or belt sanding.

Examples of the laser light include a YAG laser, an excimer laser (KrF), a carbon dioxide laser, and the like.

Next, a second and a third trimming system of the present invention will be described.

FIG. 12 is a block diagram showing an outline of a laser trimming apparatus used for manufacturing the second and third ceramic heaters of the present invention.

When performing laser trimming, as shown in Fig. 12, the conductor layer 12m is formed in a concentric shape with a predetermined width so as to include the circuit of the resistance heating element to be formed, or a predetermined pattern Disc-shaped ceramic substrate 11 on which the resistance heating element is formed Fix it on the tape 13.

The table 13 is provided with a motor and the like (not shown), and the motor and the like are connected to the control unit 17 so that a signal from the control unit 17 drives the motor and the like. Thus, the table 13 can be freely moved in the xy direction (or Θ direction in addition to this).

On the other hand, a galvanomirror 15 is provided above the table 13. The galvanomirror 15 can be freely rotated by a motor 16. The laser beam 22 emitted from the laser irradiation device 14 disposed on the galvanomirror 15 is reflected and illuminates the ceramic substrate 11.

The motor 16 and the laser irradiating device 14 are connected to the control unit 17, and the motor 16 and the laser irradiating device 14 are driven by a signal from the control unit 17. 5 is rotated by a predetermined angle so that the irradiation position can be freely set in the X- _y direction on the ceramic substrate 11. As described above, by driving the table 13 on which the ceramic substrate 11 is mounted and / or the galvanomirror 15, an arbitrary position on the ceramic substrate 11 can be irradiated with the laser beam 22.

On the other hand, a camera 21 is also installed above the table 13 so that the position (x, y) of the ceramic substrate 11 can be recognized. The camera 21 is connected to the storage unit 18, thereby recognizing the position (x, y) of the conductor layer 12 m of the ceramic substrate 11, and irradiating the position with the laser beam 22. The input unit 20 is connected to the storage unit 18 and has a keyboard or the like (not shown) as a terminal, and receives a predetermined instruction or the like via the storage unit 18 or a keyboard. It is supposed to be.

Furthermore, this laser trimming device includes a calculation unit 19, and based on data such as the position and thickness of the ceramic substrate 11 recognized by the camera 21, the irradiation position and irradiation position of the laser beam 22 are determined. Performs calculations to control speed, laser light intensity, etc. Based on the calculation result, the control unit 17 issues an instruction to the motor 16, the laser irradiation device 14, etc., and rotates the galvanomirror 15, or emits the laser beam 22 while moving the table 13. Irradiation is performed, and trimming is performed in an unnecessary part of the conductor layer 12 m or in a direction substantially parallel to the direction in which the current of the resistance heating element pattern flows. In this way, a predetermined pattern of the resistance heating element is formed, or a groove or a notch is formed in the resistance heating element.

Also, this laser trimming device has a resistance measuring unit. The resistance measuring section includes a plurality of tester pins, divides the resistance heating element pattern into a plurality of sections, contacts the tester pins for each section, measures the resistance value of the resistance heating element, and applies laser light to the section. Irradiation is performed, and trimming is performed almost in parallel along the direction in which the current of the resistance heating element flows.

Next, a method of manufacturing a ceramic heater using such a laser trimming device will be specifically described. Here, the laser trimming step, which is the main part of the second and third aspects of the present invention, will be described in detail, and other steps will be briefly described. The steps other than the trimming will be described in more detail later. First, a ceramic substrate is manufactured. First, a formed body made of ceramic powder and resin is manufactured. As a method of producing the formed body, there are a method of producing granules containing a ceramic powder and a resin, then putting the granules into a mold or the like and applying a pressing pressure, and a method of laminating and pressing green sheets. There is a manufacturing method, and a more appropriate method is selected depending on whether or not there is a force for forming another conductive layer such as an electrostatic electrode therein. Thereafter, the formed body is degreased and fired to produce a ceramic substrate.

Thereafter, a through hole for inserting a lifter pin into the ceramic substrate, a bottomed hole for burying a temperature measuring element, and the like are formed. 'Next, a conductive paste layer having the shape shown in FIG. 12 is formed on the ceramic substrate 11 by screen printing or the like in a wide area including a portion serving as a resistance heating element, and the conductive paste layer is baked. 2 m. The conductive layer may be formed by using a physical vapor deposition method such as plating or sputtering. In the case of plating, a conductive layer 12 m can be formed in a predetermined region by forming a plating resist, and in the case of sputtering or the like, by performing selective etching.

Further, the conductor layer may be formed as a resistance heating element pattern as described above.

In this manner, the force for forming the conductor layer 12 m in the predetermined area or the ceramic substrate 11 on which the resistance heating element of the predetermined pattern is formed is fixed to the predetermined position of the table 13.

The trimming data, the data of the resistance heating element pattern, both the trimming data and the data of the resistance heating element pattern, etc. are input from the input section 20 in advance and stored in the storage section 19. That is, data of the shape to be formed by trimming is stored. Trimming data is data used for trimming the side and surface of the resistance heating element pattern, trimming in the thickness direction, and trimming a ladder-like pattern. The resistance heating element pattern data is It is used when a conductor layer printed in a so-called solid shape is trimmed to form a resistance heating element pattern. Of course, these can be used in combination.

Further, in addition to these data, desired resistance value data may be input and stored in the storage unit. This means that the resistance measurement unit measures the resistance value and calculates how much the desired resistance value differs, and calculates what trimming is performed to correct this to the desired resistance value. Next, by photographing the fixed ceramic substrate 11 with the camera 21, the formation position of the conductor layer 12 m and the pattern of the resistance heating element are stored in the storage section 18. Is done. Based on the data of the position of the conductor layer, the data of the shape to be formed by trimming, and the resistance value data as required, the calculation unit 19 performs calculation, and the result is stored in the storage unit as control data. Stored in 18.

Then, a control signal is generated from the control unit 17 based on the calculation result, and By irradiating a laser beam while driving the motor 16 of the pano mirror 15 and / or the motor of the table 13, unnecessary portions of the conductor layer 12 m or portions where resistance of the heating element is desired to be increased by the above method. Trim using

As shown in FIGS. 12 and 13, the table 13 has a fixing projection 13b that comes into contact with the side surface of the ceramic substrate 11 and a fitting projection 13a that fits into the through hole into which the lifter pin is inserted. The ceramic substrate 11 is fixed on the table 13 using these projections.

After that, through the connection of external terminals, installation of temperature measuring element, etc., the production of ceramic heater is completed.

As shown in FIG. 11, the resistance value is controlled by dividing the resistance heating element pattern into two or more sections (1i to ₁₆ ) and controlling the resistance value for each section.

In the second and third aspects of the present invention, as described above, the resistance value is controlled by forming a groove or the like in a part of the resistance heating element.

When removing part of the conductor layer, etc., the part to be trimmed, such as the conductor layer, is trimmed by laser light irradiation, but the laser light irradiation has a large effect on the underlying ceramic substrate. It is important that there is no.

Therefore, it is necessary to select a laser beam that is well absorbed by the metal particles and the like constituting the conductor layer and the like, but hardly absorbed by the ceramic substrate. As described above, examples of such a laser include a YAG laser, a carbon dioxide laser, an excimer laser, and a UV (ultraviolet) laser.

The required laser light intensity varies depending on the type and thickness of the conductor layer to be removed, etc., but cannot be specified unconditionally, but a YAG laser or an excimer (KrF) laser can be optimized.

As the YAG laser, SL432H, SL436G, SL432GT, and SL411B manufactured by NEC Corporation can be used.

Preferably, the laser is pulsed light. This is because a large amount of energy can be applied to the resistance heating element in a very short time, and damage to the ceramic substrate can be reduced. The pulse is preferably 1 kHz or less. 1 kHz If it exceeds, the energy of the first pulse of the laser will be high and it will be trimmed excessively.

Further, the processing speed is desirably 100 mm / sec or less. If the time exceeds 100 mmZ seconds, a groove or the like cannot be formed unless the frequency is increased. As described above, since the upper limit of the frequency is 1 kHz or less, the frequency is preferably 100 mm or less.

Further, when a groove is formed in the resistance heating element so as to reach the ceramic substrate, the output of the laser is preferably 0.3 W or more.

The ceramic substrate is preferably made of a material that hardly absorbs laser light. For example, in the case of an aluminum nitride substrate, a substrate having a carbon content of 500 ppm or less and a small carbon content is preferable.

In the third aspect of the present invention, the surface roughness of the surface of the ceramic substrate is set to not more than 20 / im in JISB0601Ra. The surface roughness of the ceramic substrate is desirably 10 // m or less. This is because when the surface roughness is large, the laser light is absorbed.

The surface roughness is adjusted by polishing and polishing. Polishing # using 2 0 0-1 0 0 0 diamond grindstone to perform the polishing by applying a load of 1 to 1 0 0 kg Z cm ² from both sides. The polishing is performed by using a polishing cloth and a diamond paste containing diamond powder having a particle diameter of 0.1 to 100 / im. The surface roughness is measured using a surface roughness meter manufactured by KEYENCE CORPORATION.

In the second aspect of the present invention, for the same reason as in the third aspect of the present invention, it is preferable that the surface roughness of the surface is set to 20 μπι or less in JISB 0601 Ra, and 10 m It is more desirable to make the following. As a method for adjusting the surface roughness, a method similar to the above-described third invention can be used.

The ceramic heaters of the second and third aspects of the present invention have substantially the same configuration as the ceramic heater of the first aspect of the present invention except that a groove or a notch is formed in the resistance heating element. Since the description has already been made with reference to FIG. As in the second and third ceramic heaters of the present invention, the surface of the ceramic substrate When a resistance heating element is provided on the (bottom) surface, it is desirable that the heating surface be on the opposite side of the resistance heating element formation surface. This is because the ceramic substrate plays a role of thermal diffusion, so that the temperature uniformity of the heated surface can be improved.

The shape (diameter and thickness), material, and the like of the ceramic substrate in the second and third ceramic heaters of the present invention are the same as those of the above-described first present invention. However, for the material of the ceramic substrate, it is necessary to take measures such as reducing the amount of carbon so as not to absorb the laser beam.

As described above, the surface of the ceramic substrate constituting the ceramic heater according to the third aspect of the present invention is polished and adjusted to not more than 20 μπι by JIS B 0601 Ra. In addition, it is desirable to adjust it to 10 μπι or less.

The surface of the ceramic substrate constituting the ceramic heater according to the second aspect of the present invention is preferably polished and adjusted to 20 μπι or less by JISBO601Ra, and is preferably adjusted to 10 μπι or less. Is more desirable.

In the second and third aspects of the present invention, if necessary, a heat-resistant ceramic layer may be provided between the resistance heating element and the ceramic substrate. For example, in the case of a non-oxide ceramic, an oxide ceramic may be formed on the surface.

In the third invention, in such a case, the surface roughness of the surface of the heat-resistant ceramic layer or the oxide ceramic layer is adjusted to 20 zm or less. In such a case, in the second aspect of the present invention, it is desirable to adjust the surface roughness of the heat-resistant ceramic layer or the oxide ceramic layer to 20 // m or less.

In the second and third aspects of the present invention, it is preferable that the resistance heating element formed on the surface or inside of the ceramic substrate is divided into at least two or more circuits. This is because, by dividing the circuit, the amount of heat generated can be changed by controlling the power supplied to each circuit (channel), and the temperature of the heated surface of the semiconductor wafer can be adjusted. The number of circuits is desirably less than 15. This is because it is easy to control. According to the second aspect of the present invention, since the variation in the resistance value can be reduced, the number of circuits can be reduced to less than 15.

Examples of the pattern of the resistance heating element include concentric circles, spirals, eccentric circles, and bends. Although a line or the like may be used, a concentric shape as shown in FIG. 5 or a combination of a concentric shape and a bent shape is preferable because the temperature of the entire ceramic substrate can be made uniform.

When the resistance heating element is formed by using the laser, it is advantageous that the wiring has a narrow and mixed pattern.

The above-described method is used as a method for forming the resistance heating element on the surface of the ceramic substrate. That is, a conductor paste is applied to a predetermined region of a ceramic substrate, and then a force for performing a trimming process by a laser after forming a conductor paste layer, or a conductor paste is baked, and then a trimming process by a laser is performed. Forming a resistance heating element. By firing, metal particles can be sintered on the surface of the ceramic substrate via a glass frit or the like. The sintering of the metal is sufficient if the metal particles and the metal particles and the ceramic are fused. Trimming is optimal after firing. This is because the resistance value fluctuates due to firing, and the resistance value can be controlled more accurately after firing.

Note that a conductor layer may be formed in a predetermined region by using a plating method, a sputtering method, or the like, and may be subjected to laser trimming.

In the second and third ceramic heaters of the present invention, the resistance heating element is formed on the surface of the ceramic substrate. The thickness of the resistance heating element is preferably 1 to 3 0111, and 1 to 15 μπι is more preferred. Further, the width of the resistance heating element is preferably 0.5 to 20 mm, more preferably 0.5 to 5 mm.

The resistance heating element can have its resistance changed depending on its width and thickness, but the above range is the most practical. This resistance (volume resistivity) can be adjusted by using laser light as described above.

In the second and third ceramic heaters of the present invention, the cross-sectional shape and aspect ratio of the resistance heating element formed on the ceramic substrate are the same as in the first present invention, and have already been described. The description here is omitted.

Also, the conductor paste used for forming the resistance heating element is the same as that of the first embodiment of the present invention, and has already been described, so that the description is omitted here. Next, a method of manufacturing a ceramic heater of the present invention including laser processing will be described in more detail with reference to FIG. 14 regarding steps other than the laser processing step. Since the laser processing step has been described in detail above, it will be briefly described here. 14 (a) to 14 (d) are cross-sectional views schematically showing a part of the method for manufacturing a ceramic heater of the present invention including laser processing.

(1) Manufacturing process of ceramic substrate

A ceramic substrate 11 having a through-hole 35 and a bottomed hole (not shown) is manufactured in the same manner as (1) of A. in the first method of manufacturing a ceramic heater of the present invention described above (FIG. 14). (See (a))-.

(2) Printing conductive paste on ceramic substrate

The conductor paste is generally a high-viscosity fluid composed of metal particles, a resin, and a solvent. This conductor paste is printed on the area where the resistance heating element is to be provided by screen printing or the like to form a conductor paste layer 12m (see Fig. 14 (b)).

The pattern of the resistance heating element is preferably a pattern consisting of concentric and bent shapes as shown in Fig. 5 because the temperature of the entire ceramic substrate must be uniform. A wide concentric or circular pattern is included to include these patterns.

(3) Firing the conductor paste

The conductor paste layer printed on the bottom surface of the ceramic substrate 11 is heated and baked to remove the resin and the solvent, and the metal particles are sintered and baked on the bottom surface of the ceramic substrate 11 to obtain a conductor having a predetermined width. After the layer is formed (see FIG. 5), the above-described trimming process using a laser is performed to form a resistive heating element 12 having a predetermined pattern (see FIG. 14 (c)). The heating and firing temperature is preferably from 500 to 1,000. Alternatively, a pattern such as a concentric circle, a spiral, a bent pattern, or the like may be formed first, and a part of the pattern may be trimmed to adjust its resistance value, thereby forming a resistance heating element 12.

(4) Formation of metal coating layer It is desirable to provide a metal coating layer 1200 on the surface of the resistance heating element 12 as shown in FIG. The metal coating layer 1200 can be formed by electrolytic plating, electroless plating, sputtering, or the like. However, considering mass productivity, electroless plating is optimal. FIG. 14 does not show the metal coating layer 1200. Further, instead of a metal, it may be covered with a cover such as glass or resin.

(5) Installation of terminals, etc.

Attach a terminal (external terminal 33) for connection to the power supply to the end of the pattern of the resistance heating element 12 via solder (see Fig. 14 (d)). Also, a thermocouple is inserted into the bottomed hole 34 and sealed with a heat-resistant resin such as polyimide or the like, and the production of the ceramic heater is completed.

FIG. 15 is a cross-sectional view schematically showing the ceramic heater unit manufactured as described above.

In this ceramic heater, a support column 56 is formed in a support container 51 to support the ceramic substrate 11. On the bottom surface of the ceramic substrate 11, a resistance heating element 12 is formed. An intermediate bottom plate 52 having an opening 52 for preventing the ceramic substrate 11 from being overheated by radiant heat is mounted in the middle of the support column 56, and is supported by a panel 53. A bottom plate 51a having an opening 510 is formed at the bottom of 1, and a supply port 59 for supplying a refrigerant is provided.

Power is supplied by the power supply terminal 54. Further, the thermocouple 44 is pressure-bonded to the ceramic substrate 11 with the force of the panel 45 via the electric heating plate 42.

When the ceramic heater unit is cooled, a refrigerant is introduced into the support vessel 51, and the refrigerant flows in from the supply port 59 and is connected to the resistance heating element 12 and the ceramic substrate 11 While contacting, heat is exchanged and discharged from the opening 5 10.

The refrigerant may be a liquid or a gas as long as it is a fluid. Examples of the liquid include water, ammonia, alcohol, and ethylene glycol, and examples of the gas include nitrogen, carbon dioxide, argon, neon, and air.

The first, second and third ceramic heaters of the present invention can be used as an electrostatic chuck by providing an electrostatic electrode inside a ceramic substrate. Further, by providing a tip-top conductor layer on the surface and providing a guard electrode and a duland electrode inside, it can be used as a chuck top plate of a wafer prober. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in more detail with reference to Examples.

(Example 1)

(1) Aluminum nitride powder (average particle size: _{0.6 βΐα} ) 100 parts by weight, yttria (average particle size: 0.4 // m) 4 parts by weight, ataryl binder 12 parts by weight A spray drying of a composition comprising alcohol was performed to produce a granular powder.

(2) Next, the granular powder was placed in a mold and molded into a flat plate to obtain a green compact.

(3) Next, this generated form is 1800. C, Pressure: Hot pressed at 20 MPa to obtain an aluminum nitride plate having a thickness of about 3 mm.

Next, a disk having a diameter of 21 Omm was cut out from the plate to obtain a ceramic plate (ceramic substrate 11). This ceramic substrate is drilled to form a through hole 35 for inserting the lifter pins 36 of the semiconductor wafer, and a bottomed hole 34 (diameter: 1. lmm, depth: 2 mm) for embedding a thermocouple. did. The porosity of the ceramic substrate was approximately 0%.

The porosity was measured as follows. That is, the ceramic is crushed, immersed in mercury or an organic solvent, the volume is measured, the true specific gravity is calculated from the previously measured weight, and the porosity is calculated from the apparent specific gravity calculated from the shape. did.

(4) A conductor paste layer was formed on the ceramic substrate 11 obtained in (3) by screen printing. The printing pattern was as shown in FIG. As the conductor paste, A g 4 8 wt ^_0/0, P t 2 1 wt ^{_{0 / o, S i 0 2}} 1. 0 wt%, B ₂ 0 ₃ 1. ₂ wt%, Z n04. 1 wt% , P b 03. 4 wt%, acetic acid Echiru 3.4 wt%, was used a composition consisting of heptyl carbitol 1 7.9 wt ^_0/0. This conductive paste was an Ag—Pt paste, and the silver particles had an average particle size of 4.5 μιη and were scaly. The Pt particles were spherical with an average particle diameter of 0.5 μιη.

(5) Further, after forming the conductor paste layer of the heating element pattern, the ceramic substrate 11 is heated and fired at 780 ° C. to sinter Ag and Pt in the conductor paste and ceramic. It was baked on substrate 11.

As shown in FIG. 5, the pattern of the resistance heating element 12 is 7 channels of 12 a to 12 g. There are three spiral channels (12 e to 12 g) on the inner circumference, and four winding channels (12 a to l 2 d resistance heating elements) on the outer circumference.

Note that a channel is a circuit that performs the same control by applying the same voltage when performing control. In the present embodiment, each channel has a resistance heating element (12 a ~ 12 g).

(6) The variation in the resistance in each channel (resistance heating elements 12 a to l 2 g) is calculated by dividing the pattern in the same channel, measuring the resistance at both ends within the divided area, and calculating the average. The average resistance value of the channel was used, and the variation within one channel was calculated from the difference between the highest resistance value and the lowest resistance value and the average resistance value. Resistance variation is calculated for each channel. In the present invention, the largest variation of the resistance heating element may be 25% or less. '

(7) Next, a silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the portion where the external terminals 33 for securing the connection with the power supply were to be formed, thereby forming a solder layer.

Next, an external terminal 33 made of Kovar was placed on the solder layer, heated and reflowed at 420 ° C., and the external terminal 33 was attached to the surface of the resistance heating element 12.

(8) A thermocouple for temperature control was sealed with polyimide to obtain a ceramic heater 10.

(Example 2)

Same as Example 1, except that a ceramic substrate was manufactured as follows.

(1) SiC powder (average particle size: 1.1 μΐη) 100 parts by weight, B ^ C 4 parts by weight, A composition comprising 12 parts by weight of krill pinda alcohol was spray-dried to produce a granular powder.

(3) Next, the green compact was hot-pressed at 1890 ° C and a pressure of 2 OMPa.

A SiC plate having a thickness of about 3 mm was obtained. Furthermore, the surface was polished with a # 800 diamond whetstone and polished with diamond paste to Ra = 0.008. Further, a glass paste (G-5177, manufactured by Shoei Chemical Industry Co., Ltd.) was applied to the surface, and the temperature was raised to 600 ° C. to form a SiO ₂ layer having a thickness of 2 μιη. The porosity of the ceramic substrate was 3%.

Next, a disk having a diameter of 21 Omm was cut out from the plate to obtain a ceramic plate (ceramic substrate 11). The ceramic substrate was drilled to form a through hole 35 for inserting a lifter pin 36 of a semiconductor wafer and a bottomed hole 34 (diameter: 1. lmm, depth: 2 mm) for embedding a thermocouple.

(4) Further, after the conductor paste layer of the heating element pattern is formed, the ceramic substrate 11 is heated and fired at 780 ° C. to sinter Ag and Pt in the conductor paste and to form the ceramic paste on the ceramic substrate 11. Baked.

As shown in FIG. 9, the pattern of the resistance heating element 32 is a 9-channel spiral pattern.

Therefore, the part perpendicular to the printing direction is thicker than the other parts. Therefore, of the pattern of the resistance heating element 32, a portion perpendicular to the printing direction was polished by a belt sander for polishing by rotating a # 200 abrasive paper.

(5) The resistance variation is calculated by dividing the pattern in the same channel, measuring the resistance at both ends within the divided range, and taking the average as the average resistance value of the channel. The variation in one channel was calculated from the difference and the average resistance value. The variation of the resistance value is calculated for each channel, but the largest variation value should be 25% or less.

(6) Attach the external terminal 13 to secure the connection to the power supply. A silver-lead solder paste (Tanaka Kikinzoku Co., Ltd.) was printed by lean printing to form a solder layer.

Next, an external terminal 13 made of Kovar was placed on the solder layer, heated and reflowed at 420 ° C., and the external terminal 13 was attached to the surface of the resistance heating element 12.

(7) A thermocouple for temperature control was sealed with polyimide to obtain a ceramic heater 10.

(Example 3)

(1) Aluminum nitride powder (manufactured by Tokuyama, average particle size 0.6 μτα) 100 parts by weight, 4 parts by weight of alumina, 11.5 parts by weight of acrylic resin binder, 0.5 parts by weight of dispersant Using a paste obtained by mixing 53 parts by weight of alcohol composed of 1-butanol and ethanol, green sheets having a thickness of 0.47 mm were produced by a doctor blade method.

(2) Next, after drying this green sheet at 80 ° C. for 5 hours, a portion that becomes a through hole 35 for inserting a lifter pin for transporting a semiconductor wafer, etc., The part to be formed and the part to be a through hole were formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 xm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of a terbineol solvent 3.5 parts by weight of dispersant 0

The conductor paste A was prepared by mixing 3 parts by weight.

100 parts by weight of tungsten particles having an average particle diameter of 3 μπι, 1.9 parts by weight of an acrylic binder, 3. parts by weight of an α-terbineol solvent, and 0.2 parts by weight of a dispersant were mixed to prepare a conductive paste Β. .

This conductive paste was printed by screen printing on a daline sheet in which a portion to be a via hole was formed to form a conductive paste layer for a resistance heating element. The printing pattern was a spiral pattern as shown in Fig. 8 and a partially bent pattern. The width of the conductive paste layer was 1 Omm, and its thickness was 12 μm. The thickness variation is ± 0. As a whole, but the variation is not localized.

Next, a green sheet in which conductive paste A The conductor paste was printed on the top to form a conductor paste layer for conductor circuits. The shape of the print was strip-shaped.

In addition, the conductive paste B was filled in the portions to be the via holes and the portions to be the through holes.

On the green sheet printed with the conductor paste layer after the above process, 37 green sheets without printed conductor paste are stacked, and under that, the green sheet printed with the conductor paste layer is stacked. Underneath, 12 green sheets with no conductive paste printed are stacked 130. C, laminated at a pressure of 8 MPa (4) Next, the obtained laminated body was degreased in nitrogen gas at 600 ° C for 5 hours.

Hot pressing was performed at 0 ° C and a pressure of 15 MPa for 10 hours to obtain a ceramic plate having a thickness of 5 mm. This was cut into a 23 Omm disk to form a ceramic plate having a 6 / m-thick and 10-mm-wide resistance heating element through hole.

(5) Next, the ceramic plate obtained in (4) is polished with a diamond grindstone, a mask is placed, and a blast treatment with SiC particles or the like is performed to provide a thermocouple on the surface. A bottom hole was provided.

(6) A thermocouple for temperature control was inserted into the bottomed hole, filled with silica sol, and cured at 190 ° C for 2 hours to obtain a ceramic heater having a resistance heating element and a through hole.

(Example 4)

In this example, a ceramic heater was manufactured in substantially the same manner as in Example 1, except that the pattern of the resistance heating element was a pattern consisting of only the bent lines shown in FIG.

(Comparative Example 1)

A ceramic heater was manufactured in the same manner as in Example 1, except that the pattern of the resistance heating element to be formed was the concentric pattern shown in FIG.

(Comparative Example 2)

A ceramic heater was formed in the same manner as in Example 1 except that the pattern of the resistance heating element to be formed was the concentric pattern shown in Fig. 9 and the thickness of the ceramic substrate was 28 mm. Was manufactured.

(Comparative Example 3)

A ceramic heater was manufactured in the same manner as in Example 1 except that the pattern of the formed resistance heating element was the concentric pattern shown in FIG. 9 and the diameter of the ceramic substrate was 15 O mm. ''

(Comparative Example 4)

A ceramic heater was manufactured in the same manner as in Example 2 except that the sintering aid was not added. The porosity was 5.5%. The concentric pattern shown in Fig. 9 was used as the pattern of the resistance heating element.

With respect to the ceramic heaters obtained in Examples 1 to 4 and Comparative Example 1, variations in the resistance value of the resistance heating element were measured. The results are shown in Table 1 below.

table 1

Note) The number at the top indicates the channel number of the resistance heating element.

In the ceramic heater according to Example 1, 3, 4, 1. 2a-1 2 _g sequentially Numbering of Example 2, the ceramic heater of Comparative Example 1, from the outside of the resistance heating element

They are numbered in order. Further, the ceramic heaters according to Examples 1 to 4 and Comparative Examples 1 to 4 obtained through the above steps were evaluated by the following indexes. At this time, a temperature controller (Omron E5ZE) was attached to the obtained ceramic heater, and the performance was evaluated. The results are shown in Table 2.

(1) Temperature uniformity within the heating surface Using a semiconductor wafer with a 17-point temperature measuring element, the in-plane temperature distribution was measured. The temperature distribution is indicated by the difference between the maximum temperature and the minimum temperature at a setting of 200 ° C.

(2) Transient in-plane temperature uniformity and heating time

The distribution of the in-plane temperature when the temperature was raised from room temperature to 130 ° C. was measured. The temperature distribution is indicated by the difference between the highest and lowest temperatures. At the time of this heating, the heating time was also measured.

(3) Recovery time

When a semiconductor wafer at 25 ° C was placed at a set temperature of 140 ° C, the time to recover to 140 ° C (recovery time) was measured.

Table 2

As is clear from Table 1 above, the variation in the resistance value of the resistance heating element is 20% or less in the channel in Examples 1 to 4, and 6 is the highest accuracy. /. Met. On the other hand, in Comparative Example 1, there is a value of '27%, and the variation is large.

Also, as is clear from the descriptions in Tables 1 and 2, the ceramic heaters according to Examples 1 to 4 have no variation in the resistance value in the same channel and no variation in the resistance between channels. Excellent in-plane temperature uniformity during transition. In addition, since the resistance value is uniform, temperature control is easy and recappari one hour is short. On the other hand, in the ceramic heater according to Comparative Example 1, since the resistance variation in the same channel cannot be reduced, the in-plane temperature uniformity in a constant state and in a transient state is poor. In addition, the temperature controllability is poor and the recovery time is long.

Furthermore, in the ceramic heater according to Comparative Example 2, the substrate is too thick and the heat capacity is too large to control the temperature. Therefore, the in-plane temperature distribution during the transition becomes too large, resulting in poor controllability. In the steady state, the larger the heat capacity, the smaller the temperature distribution.

In the ceramic heater according to Comparative Example 3, it is found that the diameter of the substrate is small and the variation in the resistance value is not reflected as the temperature distribution.

In the ceramic heater according to Comparative Example 4, the porosity is too high, the thermal conductivity is reduced, and the temperature cannot be controlled. Therefore, the in-plane temperature distribution during the transition becomes too large, resulting in poor controllability. In the steady state, the thermal conductivity is poor and the temperature distribution is small.

(Example 5)

(1) 100 parts by weight of aluminum nitride powder (average particle diameter: 0.6 πι), 4 parts by weight (average particle diameter: 0.4 μπι), 12 parts by weight of ataryl bond binder The composition was spray-dried to produce a granular powder.

(3) Next, the green compact was hot-pressed at 1800 ° C. and a pressure of 2 OMPa to obtain an aluminum nitride plate having a thickness of approximately 3 mm.

(4) A conductor paste layer was formed on the ceramic substrate 11 obtained in (3) by screen printing. The printing pattern was as shown in FIG. As the conductor paste, A g 48 weight ^0, P t 21 weight ^{_{_{0/0, S i O 2}}} 1. 0 wt%, B ₂ 0 ₃ 1. ₂ wt%, Zn04. 1 wt%, P b03. 4 wt%, acetic acid Echiru 3.4 wt%, having composition consisting heptyl carbitol 1 7.9 wt ^_0/0 used.

This conductor paste was an Ag_Pt paste, and the silver particles had an average particle size of 4.5111 and were scaly. The Pt particles were spherical with an average particle diameter of 0.5 μιη.

(5) Further, after forming the conductor paste layer of the heating element pattern, the ceramic substrate 11 is heated and fired at 850 ° C to sinter Ag and Pt in the conductor paste, and the ceramic substrate 11 Baked on.

As shown in Fig. 5, the pattern of the resistance heating element is 7 channels of 12 a to l 2 g. Table 3 shows the variation in resistance in the outer four channels (trimming elements 12a to 12d) before trimming. Note that the channel is a circuit that performs the same control by applying the same voltage when performing control. In this embodiment, each channel includes a resistance heating element (12 a to l 2 g) formed as a continuous body. ).

The resistance variation in each channel (resistance heating elements 12a to l2d) is calculated by dividing the channel further into 20 parts, measuring the resistance at both ends within the divided area, and averaging the average divided resistance value (Table In Fig. 3, the average value) was used, and the variation was calculated from the difference between the highest and lowest resistance values in the channel and the average split resistance value. The resistance value in each channel (resistance heating elements 12a to 12d) is the sum of all resistance values measured separately.

(6) Next, as a device for trimming, a YAG laser with a wavelength of 1060 nm (manufactured by NEC S143AL, output 5 W, pulse frequency 0.1 to 40 kHz) was used. This device is equipped with an XY stage, a galvanometer mirror, a CCD camera, and a Nd •• YAG laser, and has a built-in controller for controlling the stage and the galvanometer mirror. The controller is a computer (NEC FC-9821) It is connected to the. The computer has a CPU that doubles as an arithmetic unit and a storage unit. It also has a hard disk that doubles as a storage unit and an input unit and a 3.5-inch FD drive.

Input the heating element pattern data from the FD drive to this computer, and read the position of the conductor layer (read the specific location of the conductor layer or ceramic Based on the marker formed on the substrate), the necessary control data is calculated, the heating element pattern is irradiated almost parallel along the direction in which current flows, the conductor layer in that part is removed, and the resistance heating element is removed. Until the ceramic substrate reached 30%, 60%, and 90% of its thickness, grooves of 50 μm each were formed until grooves of 2 μm were formed on the ceramic substrate. The measurement was performed using a laser displacement meter manufactured by Keyence Corporation.

Figures 16 (a) to (d) show the grooves reaching 30%, 60%, and 90% of the thickness of the resistance heating element and the ceramic substrate, respectively. The upper part is a photograph showing the appearance, and the middle part is a cross section. FIG. 4 is a graph showing the shape (height and position) of the upper part, and the lower part is a cross-sectional view when cut in the direction of the arrow in the external view of the upper part.

However, in order to clearly show the grooves in the above photograph and the above graph, the grooves are formed perpendicularly to the direction in which the current of the resistance heating element flows, and are actually different from the grooves formed in the above embodiment.

The resistance heating element had a thickness of 10 μπι and a width of 2.4 mm. The laser had a frequency of 1 kHz, a power of 0.4 W, a byte size of 10; ιη, and a processing speed of 1 Om mZ second. Table 3 shows the resistance values of the outer four channels (resistance heating elements 12a to 12d) after trimming and the variations within each channel. The resistance variation in the channel is calculated by dividing the channel further into 20 parts, measuring the resistance at both ends of the divided area, taking the average as the average divided resistance value, and calculating the maximum and minimum resistance values in the channel. The variation was calculated from the difference between the values and the average split resistance value. Also, the resistance value in the channel is the sum of all resistance values measured separately.

(7) After attaching N i to the part where the external terminals 13 for securing the connection to the power supply were to be attached, a silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing to form a solder layer. .

Next, the external terminal 13 made of Kovar was placed on the solder layer, and heated and reflowed at 420 ° C., and the external terminal 13 was attached to the surface of the resistance heating element 12.

(8) A thermocouple for temperature control was sealed with polyimide to obtain a ceramic heater 10. '

(Example 6) A ceramic heater was manufactured in the same manner as in Example 1 except that the ceramic substrate was manufactured as described below, and the variation in resistance value of the resistance heating element was measured.

(1) S i C powder (average particle size: 1. 1 μπι) 1 0 0 parts by weight, B ₄ C4 parts performs spray drying of § acrylic binder 1 2 parts by weight of the composition consisting of alcohols, granular Was prepared.

(3) Next, the formed body was hot-pressed at 189 ° C. and a pressure of 2 OMPa to obtain a SiC plate having a thickness of about 3 mm. The surface was further polished with a # 800 diamond grindstone and polished with diamond paste to Ra = 0.008 μm. Further, a glass paste (G-517, manufactured by Shoei Chemical Industry Co., Ltd.) was applied on the surface, and the temperature was raised to 600 ° C. to form a SiO ₂ layer having a thickness of 3 μπι.

Next, a disk having a diameter of 21 Omm was cut out from the plate to obtain a ceramic plate (ceramic substrate 11). This ceramic substrate is drilled to form a through hole 35 for inserting lifter pins 36 of a semiconductor wafer and a bottomed hole 34 (diameter: 1. lmm, depth: 2 mm) for embedding a thermocouple. did.

Also in this example, the width was 50% until the grooves of 30 μm, 60% and 90% of the thickness of the resistance heating element reached the ceramic substrate, and a 2 μπι deep groove was formed in the ceramic substrate. A μm groove was formed.

(Comparative Example 5)

A ceramic heater was manufactured in the same manner as in Example 5, except that the depth of the groove was set to 15% of the thickness of the resistance heating element, and the resistance value variation of the resistance heating element was measured.

For the ceramic heaters according to Examples 5 to 6 and the ceramic heater according to Comparative Example 5, variations in resistance values before and after trimming are shown in Table 3.

The ceramic heater obtained through the above steps was evaluated according to the following indices.

(1) Board warpage

Measure flatness with a flatness measuring device (Nexiv) at 17 locations on the ceramic substrate Then, the change in flatness was examined. If there was no change, it was determined that there was no warpage.

(2) Oxidation resistance of heating element

The sample was heated to 350 ° C and left for 2 weeks, and the rate of change in resistance was measured. The rate of change of the resistance was calculated by the following equation (1).

Rate of change of resistance value (./.) = [(Resistance value after heating-resistance value before heating) / resistance value before heating] X 100 · · · (1),

(3) Reduced board strength ■

Specimens were cut out according to JISR 1601, and the strength reduction rate was measured. The strength of the test specimen was measured using an instrument universal tester (Model 4507 load cell 500 kgf) in the air at a temperature of 25 to 1000 ° C, a crosshead speed of 0.5 mm Z, a span distance of L = 30 mm, and a test. The test was performed with a specimen thickness of 3.06 mm and a specimen width of 4.03 mm, and the three-point bending strength σ (kgf / mm ² ) was calculated using the following equation (1). Table 3 shows the bending strength at 25 ° C. Formula (1)

3PL

σ = ——

2wt ²

Table 3

As is evident from Table 3 above, when the depth of the formed groove is less than 20% of the thickness of the resistance heating element (Comparative Example 5), the variation in the resistance value cannot be suppressed.

Also, as is clear from the results shown in Table 3, in Example 56, since the groove was formed at a depth of 20% or more of the thickness of the resistance heating element, the resistance value was surely increased. Variation can be suppressed. Also, there is almost no warpage or reduction in strength of the substrate. 'If the heating element remains at the bottom of the groove, it is estimated that a slight change in resistance will occur, so the groove reaching the ceramic substrate is optimal.

(Example 7)

A ceramic heater 10 was manufactured in the same manner as in Example 5, except that the thickness of the resistance heating element was 5 μm, and a groove was formed in the resistance heating element to reach the ceramic substrate. Was. , Figure 17 is a graph showing the cross-sectional shape (position and height) of the resistance heating element. From FIG. 17, it can be seen that the groove formed by the trimming reaches the ceramic substrate. The measurement was performed using a laser displacement meter manufactured by Keyence Corporation.

(Example 8)

A ceramic heater was manufactured in the same manner as in Example 6, except that the thickness of the resistance heating element was 5 μm, and a groove was formed in the resistance heating element to reach the ceramic substrate.

(Example 9)

Same as Example 5 except that the thickness of the resistance heating element was set to 5 μm, and trimming was performed several times by laser light in the direction perpendicular to the current propagation, and grooves were formed perpendicular to the direction in which the current propagated. Then, a ceramic heater was manufactured, and the variation of the resistance value of the resistance heating element was measured.

Further, a temperature controller (E5ZE manufactured by Omguchi Company) was attached to the ceramic heaters manufactured in Examples 7 to 9, and the following performance evaluation was performed.

(1) Uniformity of temperature distribution in heated surface

Using a silicon wafer with a 17-point temperature measuring element, the in-plane temperature distribution was measured. The temperature distribution is indicated by the difference between the maximum and minimum temperatures at 200 ° C. (2) In-plane temperature uniformity during transient

The distribution of the in-plane temperature when the temperature was raised from room temperature to 130 ° C. was measured. The temperature distribution is indicated by the difference between the highest and lowest temperatures.

(3) Overshoot amount

The temperature was raised to 200 ° C, and the maximum rise from 200 ° C before reaching the steady temperature was measured.

(4) Recovery time

When a silicon wafer at 25 ° C was placed at a set temperature of 140 ° C, the time to recover to 140 ° C (recovery time) was measured.

Table 5 shows the results.

Table 5

As is clear from the results shown in Table 4, the variation in the resistance values of the resistance heating elements 12a to 12d after the trimming is about 5 or less even in the channel in Examples 7 and 8 (the highest accuracy). 1%), and the in-plane variation is as good as 0.5% or less. Moreover, there is nothing that the heating element melts.

On the other hand, in Example 9, it was found that the heating element melted at 7% or more even in the channel.

Also, as is clear from the results shown in Table 5, in Examples 7 and 8, there is no variation in the resistance value in the channels after trimming and no variation in the resistance value between the channels. Has excellent in-plane temperature uniformity. In addition, because the resistance is uniform, temperature control is easy, the overshoot temperature is low, and the recovery time is low. Is also short.

On the other hand, in the ninth embodiment, the resistance variation in the channel cannot be reduced, so that the in-plane temperature uniformity at the time of constant transient is poor. In addition, the temperature control is poor, the overshoot temperature is high, and the recovery time is long.

In the ninth embodiment, control on seven channels is not performed. Therefore, it is necessary to increase the number of channels and control the input power variably.

Further, in Example 9, there was a case in which a heating element was melted and disconnected due to excessive heating due to a local increase in the resistance value.

(Example 10)

When manufacturing the ceramic substrate was polished from both sides at 1 kg / cm ² load with a diamond grindstone of # 2 2 0, further, diamond paste (particle size 0. 5 / m) and polices in Po Li Sing Cross The surface roughness of the surface is 0.01 m in Ra, and when forming the resistance heating element, the thickness of the resistance heating element is 5 μιη, and a 2 μm groove is formed in the resistance heating element. A ceramic heater 10 was manufactured in the same manner as in Example 5 except that a groove having a width of 50 μm was formed.

(Example 11)

When manufacturing a ceramic substrate, it is polished with a # 800 diamond grindstone and polished with a diamond paste to reduce the surface roughness to _Ra at 0. Furthermore, a glass paste (manufactured by Shoei Chemical Industry Co., Ltd.) G-5177) was applied, and the temperature was raised to 600 ° C to form a Si0 ₂ layer having a thickness of 3 μπι, which was polished with a # 800 diamond grindstone. In addition, when forming the resistance heating element, the width of the resistance heating element was set to 5 μπι, and a groove having a width of 50 μm was formed until a groove of 2 μm was formed in the resistance heating element. In the same manner as in 6, a ceramic heater was manufactured.

With respect to the ceramic heaters manufactured in Examples 10 and 11, variations in resistance value before and after trimming were measured by the above-described method.

The results are shown in Table 6 below. '

As is clear from the results shown in Table 6, in Examples 10 and 11, the variation in the resistance values of the resistance heating elements 12a to l2d after trimming was less than about 5% even within the channel (the most accurate 1%), and the in-plane variation is better than 0.5% or less. Moreover, none of the heating elements melted.

(Example 12)

When manufacturing ceramic substrates, use lk gZ Polishing both sides of the ceramic substrate with a load of cm ² to make the surface roughness Ra 0.6 m, and when forming the resistance heating element, the thickness of the resistance heating element is set to 5 μπι. A ceramic heater was manufactured in the same manner as in Example 5, except that a groove having a width of 50 μιη was formed until a groove of 2 μΐη was formed.

(Example 13)

When manufacturing the ceramic substrate, using a diamond grindstone of # 120, the surface roughness by polishing the both surfaces of the ceramic substrate at 1 kg / cm ² load and 1. 0 m in R a, to form a resistance heating element At this time, a ceramic heater was manufactured in the same manner as in Example 5 except that the thickness of the resistance heating element was 5 m, and a groove having a width of 50 μm was formed until a groove of 2 m was formed in the resistance heating element.

(Example 14)

When manufacturing a ceramic substrate, use a # 100 diamond grindstone, grind both surfaces of the ceramic substrate with a load of 1 kgcm ² to make the surface roughness Ra 8. 8.μιη, and when forming a resistance heating element, A ceramic heater was manufactured in the same manner as in Example 5, except that the thickness of the resistance heating element was 5 μπι, and a groove having a width of 50 μm was formed until a groove of 2 μm was formed in the resistance heating element.

(Example 15)

When manufacturing a ceramic substrate, use a # 80 diamond grindstone and grind both surfaces with a load of lk gZc m ^{2 to} achieve a surface roughness of 180 μm with Ra. A ceramic heater was manufactured in the same manner as in Example 5, except that the thickness of the heating element was set to 5 μπι and a groove having a width of 50 μπι was formed in the resistance heating element until a groove of 2 μηα was formed.

(Comparative Example 6)

When manufacturing the ceramic substrate, do not grind both sides of the ceramic substrate.When forming the resistance heating element, set the thickness of the resistance heating element to 5 μm, and make the width until a 2 βm groove is formed in the resistance heating element. A ceramic heater was manufactured in the same manner as in Example 5 except that a groove of 50 μm was formed. The surface roughness of the ceramic substrate at this time was 12.0 and 22.0 μm. The ceramic heaters according to Examples 10 to 15 and Comparative Example 6 were evaluated using the following indices. Table 7 shows the results.

(1) substrate warpage

The change in flatness was examined by the same method as the method for evaluating the ceramic heaters according to Examples 5 to 6 and the ceramic heater according to Comparative Example 5.

(2) Reduced board strength

The strength reduction rate of the ceramic substrate was measured by the same method as the method for evaluating the ceramic heaters according to Examples 5 to 6 and the ceramic heater according to Comparative Example 5.

(3) Cooling characteristics

After the temperature was raised to 140 ° C, the time required to cool to 90 ° C was measured. The refrigerant is air, and injected with 0. 01M ³ Z min.

(4) Adhesion of resistance heating element

The surface of the heating element irradiated with laser was plated with Ni, the pins were fixed with solder, and the tensile strength was measured. ~

Table 7

Note) Tensile strength: Tensile strength of resistance heating element As is clear from the results shown in Table 7, in Examples 10 to 15, the surface roughness Ra was Since the thickness is adjusted to 20 μm or less, a decrease in the strength of the ceramic substrate can be suppressed, and the ceramic substrate hardly warps. This is probably because the laser light is reflected so that the ceramic substrate is not unnecessarily damaged.

Furthermore, the cooling time is shorter as the surface roughness Ra is smaller. This is because when the surface roughness Ra is large, a groove is formed in the resistance heating element, and the turbulence generated by the unevenness is further amplified by the concave の on the ceramic substrate surface, and the heat storage air is It is estimated that this was caused by stagnation. Industrial availability

As described above, according to the ceramic heater for semiconductor manufacturing and inspection equipment of the first aspect of the present invention, since there is almost no resistance variation, the temperature of the heating surface can be made uniform especially during a transition. In addition, recovery time can be reduced. Further, according to the second ceramic heater for semiconductor manufacturing inspection apparatus of the present invention, since the resistance value of the resistance heating element hardly varies, the temperature of the heating surface can be made uniform. Also, the substrate is not damaged, and the oxidation resistance of the heating element is not reduced.

Further, according to the third aspect of the present invention, the ceramic heater for an inspection device has a ceramic substrate surface roughness Ra of 20 μm or less, and thus the strength and warpage of the ceramic substrate are reduced. In addition, there is no decrease in the adhesion strength of the heating element irradiated with the laser. In addition, the cooling rate can be improved.

Also, in the second and third ceramic heaters for semiconductor manufacturing and inspection equipment of the present invention, by adjusting the resistance variation to 5% or less, a ceramic heater excellent in temperature uniformity of the heating surface can be obtained. Thus, the heating element can be prevented from being heated and melted. Furthermore, the number of channels can be reduced, the temperature uniformity in the plane during the transition can be improved, and the recovery time can be shortened.

Claims

The scope of the claims

1. A ceramic heater in which a resistance heating element is provided on the surface or inside of a ceramic substrate,

A ceramic heater for a semiconductor manufacturing / inspection apparatus, wherein a variation of a resistance value with respect to an average resistance value of the resistance heating element is 25% or less.

2. The ceramic heater for a semiconductor manufacturing / inspection apparatus according to claim 1, wherein the resistance heating element comprises a resistance ripening element having a repeating pattern of bent lines.

3. The semiconductor manufacturing / inspection apparatus according to claim 1, wherein the resistance heating element comprises a resistance heating element formed by mixing a concentric or spiral pattern and a repetitive pattern of bent lines. For ceramic heater.

4. The ceramic heater for semiconductor manufacturing and inspection equipment according to any one of claims 1 to 3, wherein the ceramic substrate has a thickness of 25 mm or less.

5. The ceramic heater for semiconductor manufacturing and inspection equipment according to any one of claims 1 to 4, wherein the porosity of the ceramic substrate is 5% or less.

6. The ceramic heater for a semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 5, wherein the ceramic substrate has a diameter of 20 O mm or more.

7. A ceramic heater having a resistance heating element formed on a ceramic substrate, wherein the resistance heating element is formed with a groove or a notch, and the groove has a thickness of 2 mm.

Ceramic heater for semiconductor manufacturing and inspection equipment characterized by having a depth of 0% or more.

8. A ceramic heater having a resistance heating element formed on a ceramic substrate, wherein the resistance heating element is formed with a groove or a notch, and a surface roughness of a resistance heating element forming surface of the ceramic substrate is: A ceramic heater for semiconductor manufacturing and inspection equipment, which has a Ra of 20 μm.

9. The ceramic heater for a semiconductor manufacturing / inspection apparatus according to claim 7, wherein a variation in a resistance value with respect to an average resistance value of the resistance heating element is 5% or less.

10. The ceramic heater for a semiconductor manufacturing / inspection device according to any one of claims 7 to 9, wherein the groove is formed along a direction in which a current of the resistance heating element flows.

11. The ceramic heater for semiconductor manufacturing and inspection equipment according to any one of claims 7 to 10, wherein the groove or the notch is formed by a laser beam.