WO2002023586A3 - Apparatus for etching noble metals using ion implantation and method of use - Google Patents

Apparatus for etching noble metals using ion implantation and method of use Download PDF

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Publication number
WO2002023586A3
WO2002023586A3 PCT/US2001/028440 US0128440W WO0223586A3 WO 2002023586 A3 WO2002023586 A3 WO 2002023586A3 US 0128440 W US0128440 W US 0128440W WO 0223586 A3 WO0223586 A3 WO 0223586A3
Authority
WO
WIPO (PCT)
Prior art keywords
etching
ion implantation
noble metal
noble metals
power output
Prior art date
Application number
PCT/US2001/028440
Other languages
French (fr)
Other versions
WO2002023586A2 (en
Inventor
Satish Athavale
Brian Lee
Heon Lee
Kilho Lee
Young Limb
Young Jin Park
Jai-Hoon Sim
Original Assignee
Infineon Technologies Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp, Ibm filed Critical Infineon Technologies Corp
Publication of WO2002023586A2 publication Critical patent/WO2002023586A2/en
Publication of WO2002023586A3 publication Critical patent/WO2002023586A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

Apparatus for etching a patterned layer of a noble metal such as platinum. The apparatus implements a process whereby exposed areas of the noble metal are first implanted with ions and are subsequently etched. Both the ion implantation step and the etching step occur sequentially in the same chamber in the presence of a plasma discharge. The apparatus uses either a dual output power supply or two distinct power supplies to sequentially supply a high power output required for the ion implantation step and a low power output required for the etching step. Multiple cycles of implantation followed by etching may be applied to achieve deep etching of thick layers. A programmed computer controls the process steps. A method of using the apparatus is also provided.
PCT/US2001/028440 2000-09-13 2001-09-13 Apparatus for etching noble metals using ion implantation and method of use WO2002023586A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66067900A 2000-09-13 2000-09-13
US09/660,679 2000-09-13

Publications (2)

Publication Number Publication Date
WO2002023586A2 WO2002023586A2 (en) 2002-03-21
WO2002023586A3 true WO2002023586A3 (en) 2002-06-27

Family

ID=24650520

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/028440 WO2002023586A2 (en) 2000-09-13 2001-09-13 Apparatus for etching noble metals using ion implantation and method of use

Country Status (1)

Country Link
WO (1) WO2002023586A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI312645B (en) * 2002-07-11 2009-07-21 Panasonic Corporatio Method and apparatus for plasma doping
WO2009006679A1 (en) * 2007-07-06 2009-01-15 The University Of Sydney Pattern transferring by direct current plasma based ion implantation and deposition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2732818A1 (en) * 1995-04-07 1996-10-11 Centre Nat Rech Scient METHOD AND DEVICE FOR MONITORING THE POLARIZATION OF A BODY DIVIDED IN PLASMA
US5928528A (en) * 1996-09-03 1999-07-27 Matsushita Electric Industrial Co., Ltd. Plasma treatment method and plasma treatment system
JP2000054125A (en) * 1998-08-10 2000-02-22 Nissin Electric Co Ltd Surface treating method and device therefor
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2732818A1 (en) * 1995-04-07 1996-10-11 Centre Nat Rech Scient METHOD AND DEVICE FOR MONITORING THE POLARIZATION OF A BODY DIVIDED IN PLASMA
US5928528A (en) * 1996-09-03 1999-07-27 Matsushita Electric Industrial Co., Ltd. Plasma treatment method and plasma treatment system
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
JP2000054125A (en) * 1998-08-10 2000-02-22 Nissin Electric Co Ltd Surface treating method and device therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05 14 September 2000 (2000-09-14) *

Also Published As

Publication number Publication date
WO2002023586A2 (en) 2002-03-21

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