WO2002017384A1 - Procede et systeme servant a reguler la temperature d'un support electrostatique - Google Patents

Procede et systeme servant a reguler la temperature d'un support electrostatique Download PDF

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Publication number
WO2002017384A1
WO2002017384A1 PCT/US2001/041838 US0141838W WO0217384A1 WO 2002017384 A1 WO2002017384 A1 WO 2002017384A1 US 0141838 W US0141838 W US 0141838W WO 0217384 A1 WO0217384 A1 WO 0217384A1
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WO
WIPO (PCT)
Prior art keywords
wafer
electrostatic chuck
heat transfer
temperature
voltage
Prior art date
Application number
PCT/US2001/041838
Other languages
English (en)
Inventor
Nitin Khurana
Eugene Tzou
Vijay D. Parkhe
Stefanie Harvey
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2002017384A1 publication Critical patent/WO2002017384A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Definitions

  • the present invention relates generally to a method and system for temperature control of a substrate in a vacuum processing chamber and, more specifically, to a method and system for aluminum planarization of a semiconductor wafer in a semiconductor wafer processing system.
  • FIG. 1 is a cross-sectional view of a wafer processing chamber 100 according to the prior art.
  • the wafer 110 rests on a supporting pedestal 104 and is secured thereto by a mechanical clamp (not shown) or by an electrostatic chuck 112.
  • Electrostatic chucks contain one or more electrodes 108 that are embedded within a chuck body 114 formed of a dielectric material such as ceramic or polyimide. Such electrostatic chucks are described in, for example, U.S. Pat. No. 4,184,188, to Briglia ("the ' 188 patent"), incorporated herein by reference.
  • a voltage from a power supply 124 is applied to the electrode(s) to electrostatically attract the wafer to the chuck.
  • This voltage must be sufficiently high to prevent the wafer from moving during processing, for example in response to vibration or the force of a back side heat transfer gas. However, the voltage also must be sufficiently low for reasons including preventing the wafer from breaking or warping, and preventing the production of excessive contaminating particles.
  • a process software application known as a "recipe" can be stored in at least one memory 154 and includes process system parameter requirements such as chamber pressure, temperature, and the times and durations of any parameter modifications.
  • the system parameters of the fabrication process are controlled in accordance with the recipe in response to process control signals from a process control module 150 associated with the memory.
  • the process control module also typically includes a central processing unit (“CPU") 152 as well as other well-known hardware and software components.
  • CPU central processing unit
  • a significant factor in assuring accuracy and efficiency in the manufacture of semiconductor devices is the consistency or uniformity of processing conditions. For example, in temperature sensitive processes such as aluminum planarization, the temperature across the surface of a semiconductor wafer must be maintained within a specific range to minimize process degradation.
  • Aluminum planarization is discussed generally in commonly assigned U.S. Pat. No. 5,467,220 to Xu ("the '220 patent”), incorporated by reference herein. As disclosed in the '220 patent, the failure, in a hot aluminum planarization process, to provide a high degree of temperature consistency across the wafer surface can result in poor planarization of the aluminum film.
  • the ' 188 patent describes wafer temperature control through heat transfer between the wafer and the chuck.
  • a channel (not shown) containing a fluid for cooling the pedestal can be disposed therein.
  • one or more heaters 106 are disposed within the pedestal for use in heating a wafer secured to the electrostatic chuck. Such heater can be controlled by a heater control module 120, responsive to manual control or to a signal from the process control module.
  • a gas such as helium or argon can be supplied to the gap 116 between the chuck and the wafer to facilitate heat transfer by conduction and convection in addition to radiant heat transfer.
  • the effectiveness of such back side gas heat transfer depends in large part on the ability of the gas to flow behind the wafer as well as on the distance between the chuck surface and the wafer. Therefore, to achieve a desired wafer temperature profile, different chuck surface configurations have been used to vary the amount of chuck-to- wafer contact as well as the distance between the wafer and the chuck.
  • a grooved electrostatic chuck surface is described in commonly assigned U.S. Pat. 5,522,131, to Steger, incorporated by reference herein.
  • the pressure and flow rate of the heat transfer gas can be varied to increase or decrease the heat transfer between the wafer and the chuck. In the prior art systems, this is accomplished, for example, using a mass flow controller 132 responsive to the process control signals of the process control module 150 to vary the amount and flow rate of gas supplied to the backside region from the gas supply 130.
  • a mass flow controller 132 responsive to the process control signals of the process control module 150 to vary the amount and flow rate of gas supplied to the backside region from the gas supply 130.
  • the amount and flow rate of the gas can be varied in the prior art systems, once the wafer has initially been electrostatically attracted to the chuck, the distance(s) between the wafer and the chuck remains, relatively constant throughout the fabrication process. As a result, the rate of increase or decrease ("ramp") of wafer temperature is limited consistent with the known properties of the heat transfer gas and the fixed distance between the wafer and the chuck.
  • the present invention is a method and system for controlling temperature of a substrate retained by an electrostatic chuck in a vacuum process chamber.
  • the method and system according to the present invention is preferably applied to a semiconductor wafer processing system and, more specifically, to an aluminum planarization process.
  • the method and system described herein can be used with an electrostatic chuck having any appropriate surface configuration.
  • a power supply control module is used to vary the voltage supplied to the electrode(s) of the electrostatic chuck during processing. As the chucking voltage is decreased, the electrostatic chucking force attracting the wafer to the chuck is decreased and the gap between the back side surface of the wafer and the chuck is correspondingly increased. Conversely, as the chucking voltage is increased, the electrostatic chucking force is increased and the gap between the wafer back side surface and the chuck is correspondingly decreased.
  • a heat transfer gas is supplied to the gap during processing to facilitate heat transfer between the chuck and the wafer.
  • the heat transfer gas is preferably maintained at a relatively constant pressure through use of a needle valve.
  • an increase in gap size results in decreased back side gas pressure and a decrease in gap size results in increased back side gas pressure. Because heat transfer between the wafer and the chuck is dependent upon both the distance therebetween and the heat transfer gas pressure, the rates of heat transfer by radiation, conduction, and convection are varied with the changes in gap size and heat transfer gas pressure, in accordance with well-known principles of fluid heat transfer.
  • the amount and flow rate of the heat transfer gas can be varied at the same time as the chucking voltage to permit an additional level of temperature control.
  • the amount and flow rate of the heat transfer gas is preferably controlled independently of the chucking voltage by any well-known control mechanism.
  • the heat transfer gas can be controlled in conjunction with the voltage control.
  • a feedback mechanism is used to dynamically control the voltage and/or heat transfer gas.
  • a parameter sensor such as a temperature sensor and/or a pressure sensor, is used to measure the process conditions at the back side surface of the wafer.
  • the measured parameter data is transmitted to a feedback control module associated with the power supply control module.
  • the power supply control module issues process control signals in response to the measured parameter data to vary process conditions included but not limited to the chucking voltage, back side gas pressure, heat transfer gas leakage and any combinations thereof to achieve a desired temperature or temperature profile of the wafer.
  • the voltage variation according to the present invention provides an additional level of temperature control over the prior art methods and permits rapid temperature ramping.
  • the variations in wafer temperature ramp rate that can be achieved using the present invention can be of advantage in numerous processes and conditions, including but not limited to aluminum planarization, chemical vapor deposition, physical vapor deposition, metal deposition, etching, annealing, BSGP, to minimize the effects of outgassing, and to increase or decrease the absorption of ions or molecules by the wafer.
  • the varying of chucking voltage according to the present invention can also be used to control the time required to perform a particular step or process.
  • decreasing the voltage supplied to the electrostatic chuck can also reduce the time required to dechuck a wafer. This can be of advantage in decreasing wafer throughput time for the fabrication process.
  • Figure 1 is a cross-sectional view of a wafer processing chamber according to the prior art.
  • Figure 2 is a cross-sectional view of a wafer processing chamber according to the present invention.
  • Figure 3 is a graph of wafer temperature ramp rate according to the present invention.
  • Figure 4 is a graph of wafer temperature vs. time vs. backside gas pressure in an aluminum planarization process according to the present invention.
  • Figure 5 is a graph of electrostatic chuck backside gas pressure and dechucking time for various chucking voltages according to the present invention.
  • the present invention is a method and system for controlling temperature of a substrate retained by an electrostatic chuck in a vacuum process chamber.
  • voltage variation is used to change the distance between the substrate and the chuck, thereby providing an additional level of temperature control over the prior art methods and permitting rapid temperature ramping.
  • the present invention can be used in conjunction with any other appropriate method for controlling the temperature of a substrate, including but not limited to use of heat transfer fluid channels disposed within the pedestal, use of a heater disposed within the pedestal, controlling the temperature of heat transfer gas, controlling the flow of heat transfer gas, controlling the pressure of heat transfer gas, and controlling the leakage of heat transfer gas into the vacuum process chamber, or any combinations thereof.
  • the method and system according to the present invention is preferably applied to a semiconductor wafer processing system such as that illustrated by Figure 1.
  • a semiconductor wafer processing system such as that illustrated by Figure 1.
  • the invention described herein can additionally be applied to any electrostatic holding system, process, or substrate for which temperature control is required.
  • the invention can be used with both monopolar and bipolar electrostatic chucks.
  • Figure 2 is a sectional view of a wafer processing chamber according to the present invention.
  • the invention is best understood as applied to a hot aluminum planarization process.
  • the invention can also be applied to other wafer fabrication processes in which substrate temperature control is desirable, including but not limited to etch and deposition processes.
  • the wafer is electrostatically attracted to the chuck and the wafer back side region is pressurized to control the wafer temperature during a seed layer deposition step.
  • Aluminum has a relatively low melting point and degrades above a certain temperature range.
  • wafer temperature is maintained at a level below 180 - 200° C during the seed layer deposition step to avoid degradation of the aluminum.
  • a heater(s) disposed within the pedestal is used to heat the wafer to the desired temperature for a fill step. It is at this step that heat transfer gas is supplied to the wafer back side region to facilitate the transfer of heat from the heater to the wafer.
  • the heated aluminum then flows into the structures over the wafer to form a planar surface.
  • Wafer temperature during processing can be controlled by controlling the temperature of the heater. Furthermore, because the temperature of the wafer is also dependent upon the transfer by the heat transfer gas of heat from the heater, the wafer temperature can also be controlled by manipulating the rate of heat transfer. This can be accomplished by controlling the amount and flow rate of the heat transfer gas to manipulate the pressure of the back side heat transfer gas.
  • the invention additionally includes the functionality to permit changing the distance between the wafer and the electrostatic chuck and heater. This is accomplished by varying the voltage supplied from the power supply to the electrode(s) of the electrostatic chuck.
  • a power supply control module 246 is used to vary the voltage supplied to the electrodes.
  • the power supply control module is preferably associated with and directed in response to the process control module, but can alternatively be independent thereof.
  • the electrostatic chucking force attracting the wafer to the chuck is decreased and the distance between the back side surface of the wafer and the chuck is correspondingly increased. Because the heat transfer between the wafer and the pedestal ⁇ i.e. heaters) is dependent, in part, on the distance and amount of surface-to-surface contact between the wafer and the chuck, the rate of heat transfer between the wafer and pedestal is decreased in accordance with well-known scientific principles of heat transfer.
  • a heat transfer gas is also supplied to the wafer back side region.
  • the amount and flow rate of the back side heat transfer gas is maintained relatively constant and leakage is controlled using a needle valve (described in further detail, below).
  • the pressure of the heat transfer gas remains relatively constant during the varying of the voltage.
  • the heat transfer gas leaks from the wafer back side region into the vacuum process chamber. In these alternative embodiments, the decreased chucking force results in increased, leakage, reducing the back side gas pressure.
  • the rates of heat transfer by radiation, conduction, and convection are reduced in accordance with well-known principles of heat transfer.
  • the electrostatic chucking force is increased and the distance between the wafer back side surface and the chuck is correspondingly decreased.
  • heat transfer gas is supplied to the wafer back side region and maintained at a relatively constant pressure during the varying of the voltage.
  • conduction and convection heat transfer between the wafer and the chuck is increased within the well- known parameters for such heat transfer.
  • radiant heat transfer is also increased, in accordance with the well-known parameters for radiant heat transfer.
  • the increased chucking force inhibits the leakage of heat transfer gas.
  • the pressure of the back side heat transfer gas is increased.
  • Process voltages typically depend on the temperature of the chuck and the chucking force required to hold the wafer against any back side heat transfer gas pressure.
  • the present invention is operable over a chucking voltage range of from approximately 50V to 1000V and a substrate temperature range of from approximately 100°C to 900°C.
  • a low voltage such as 50 V is generally used to attract a wafer with sufficient force to minimize wafer movement resulting from such conditions as vibration or gas flow within the chamber.
  • a higher voltage can be used for a short period of time to flatten a bowed wafer.
  • the preferred voltage range for the present invention is from approximately 150V to 400V, which is the voltage range generally required for an electrostatic chuck temperature of from approximately 300°C to 550°C.
  • the heat transfer gas pressure is also dependent upon the leakage rate of gas from the back side region into the vacuum process chamber.
  • the leakage rate of back side heat transfer gas is not appreciably affected by the changes in distance between the wafer and the chuck caused by the variances in chucking voltage.
  • any resulting increase or decrease in leakage rate can easily be taken into account in determination of the requisite process parameters by one of skill in the art using well- known scientific principles and techniques.
  • a needle valve 252 is used to control the leakage rate of back side heat transfer gas into the vacuum process chamber.
  • the needle valve is installed in a gas line 250 that connects the heat transfer gas supply line 254 to the chamber.
  • the needle valve can be opened to permit a higher leakage rate, thereby reducing the pressure of the back side heat transfer gas.
  • the needle valve can be closed to minimize gas leakage, resulting in increased back side heat transfer gas pressure.
  • the needle valve can be used to advantage to maintain the heat transfer gas at a relatively constant pressure not only during processing but during any varying of the chucking voltage.
  • process qualification is used to measure the effects of the chucking voltage and/or the back side gas pressure to achieve a desired wafer temperature profile. Any desired variations in chucking voltages and/or back side gas pressure are incorporated into the process recipe.
  • the chucking voltage is supplied to the electrode(s) from the power supply 124 responsive to the to the power supply control module 246 as directed by the process control signals of the process control module 150.
  • the chucking voltage can be manually controlled, for example using a manual control 242.
  • the chucking voltage is varied in response to a feedback mechanism.
  • at least one parameter sensor 244 such as a temperature sensor and/or a pressure sensor, is used to measure the process conditions at the back side surface of the wafer.
  • a temperature sensor and/or a pressure sensor is used to measure the process conditions at the back side surface of the wafer.
  • an infrared pyrometer can be used to measure the wafer temperature during processing.
  • the measured temperature data is transmitted to a feedback control module 240 associated with the process control module 150 and/or power supply control module 246.
  • the process control module can then issue process control signals to modify process conditions included but not limited to the chucking voltage, back side gas pressure, heat transfer gas leakage and any combinations thereof to achieve a desired temperature or temperature profile of the wafer.
  • the recipe stored in the process control module is programmed to query a table, accessible to the process control module, that contains an appropriate voltage for a measured temperature.
  • the same or an additional table can contain the appropriate back side heat transfer gas pressure for the measured temperature.
  • an intelligent software agent accessible to the process control module is used to dynamically change the chucking voltage and/or back side heat transfer gas pressure.
  • Varying the voltage supplied to the electrostatic chuck according to the present invention permits a rapid ramping up or down of wafer temperature.
  • Figure 3 is a graph of wafer temperature ramp rate according to the present invention.
  • Test Example 310 the temperature of an electrostatically chucked wafer is increased, commencing at time zero, from approximately 210° C to approximately 400° C by manipulating the amount and flow rate of back side heat transfer gas according to the prior art.
  • Test Example, 320 the temperature of a wafer is similarly increased, commencing at time zero, by additionally changing the voltage supplied to the electrostatic chuck to 200V.
  • the reduction in voltage results in a decreased rate of temperature increase.
  • Test Example 330 using a different type of electrostatic chuck, the temperature of a wafer is increased, commencing at time zero, from approximately 200° C to approximately 400° C by manipulating the amount and flow rate of back side heat transfer gas.
  • a comparison of the wafer temperature ramp rate for Test Examples 330 and 340 clearly shows that the voltage increase of Test Example 340 also correspondingly increases the wafer temperature ramp rate over that for the prior art method.
  • the amount and flow rate of the heat tran'sfer gas can be varied at the same time as the chucking voltage to permit an additional level of temperature control.
  • Figure 4 is a graph of wafer temperature vs.
  • the recipe specifies that the back side heat transfer gas pressure be ramped up for a 15 second period.
  • process gas supplied to the vacuum process chamber and argon heat transfer gas is supplied to the wafer back side region, followed by a 5 second period during which the argon heat transfer gas is pumped from behind the wafer into the chamber.
  • Test Examples 420 and 460 were attracted to the electrostatic chuck using 250 Volts, but with respective back side heat transfer gas pressures of 2 Torr and 4 Torr. As shown by Figure 3, the wafer temperature ramp rate increased with increased backside heat transfer gas pressure. In Test Examples 430 and 440, the heat transfer gas pressure is was 5 Torr and the chucking voltages were 250 Volts and 400 Volts, respectively. Figure 3 shows that the increased back side gas pressure for Test Examples 630 and 640 resulted in improved heat transfer as compared to the other Test Examples. In addition, the increase of the chucking voltage for Test Example 440 to 400 Volts further improved heat transfer, resulting in an increased wafer temperature ramp rate as compared to the other Test Examples.
  • the variations in wafer temperature ramp rate that can be achieved using the present invention can be of advantage in numerous processes.
  • the voltage can be increased at the completion of the seed layer deposition step to rapidly ramp up the wafer temperature for the fill step.
  • Variation of the wafer temperature ramp rate can additionally be of advantage in an annealing process, to minimize the effects of outgassing, and to increase or decrease the absorption of ions or molecules by the wafer.
  • the varying of chucking voltage according to the present invention can also be used to control the time required to perform a particular step or process. For example, the diffusion of metal through barriers is time and temperature dependent. By rapidly ramping the wafer temperature, the required time for the diffusion process can be correspondingly decreased. As a result, the amount of diffusion is reduced.
  • the amount of time during which the process is performed is a factor in the deposition thickness.
  • the invention can therefore be used to increase or decrease the thickness of deposited layers by varying the chucking voltage to modify the wafer temperature ramp rate.
  • the chucking voltage and/or back side gas pressure can be varied as appropriate in accordance with the process recipe. For example, while an aluminum planarization process is commenced at a lower temperature and then ramped up to a higher temperature, the present invention can also be applied to processes that commence at a higher temperature that is subsequently reduced.
  • the chucking voltage can be increased or decreased any number of times and to any appropriate voltage level as required by the particular process. By decreasing the voltage supplied to the electrostatic chuck, the time required to dechuck a wafer can be reduced. This can be of advantage in decreasing wafer throughput time for the fabrication process.
  • Figure 5 is a graph of electrostatic chuck backside gas pressure and dechucking time for various chucking voltages according to the present invention.
  • a boron silicate glass deposition process (“BSGP") is performed at varying chucking voltages and using varying back side heat transfer gas pressures 510. It can be seen from Figure 5 that as the chucking voltage increases from approximately 175 Volts, the time to dechuck the wafer also increases.
  • the method and system according to the present invention is used with an electrostatic chuck with having a grooved surface.
  • the method and system described herein can also be used with an electrostatic chuck having any other appropriate surface configuration.
  • the method according to the present invention can be used not only to modify substrate temperature, but to maintain a selected substrate temperature.
  • a higher chucking voltage and higher back side heat transfer gas pressure can be used at the commencement of a process until a desired substrate temperature is achieved.
  • the voltage and/or gas pressure can thereafter be varied to maintain this substrate temperature.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un procédé et un système servant à réguler la température d'un substrat (110) retenu par un support électrostatique (112), ce qui consiste à soumettre à des variations la tension alimentant l'électrode ou les électrodes (108) de ce support électrostatique. On diminue la tension afin d'augmenter l'espace (116) entre la tranche et le support et on augmente la tension afin de diminuer cet espace. On modifie en conséquence les vitesses de transfert thermique par rayonnement, conduction et convection. Un gaz de transfert thermique alimente, de préférence, l'espace et est maintenu à une pression relativement constante. On peut modifier de façon indépendante la pression du gaz de transfert thermique simultanément à la tension de support, de manière à obtenir un niveau supplémentaire de régulation de température. Dans un autre mode de réalisation, on peut modifier la pression du gaz de transfert thermique en réaction aux dimensions de l'espace. On peut effectuer cette modification de la tension de support et/ou de la pression du gaz de transfert thermique en réponse à une rétroaction de données de mesures paramétriques émanant du substrat.
PCT/US2001/041838 2000-08-23 2001-08-21 Procede et systeme servant a reguler la temperature d'un support electrostatique WO2002017384A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64503200A 2000-08-23 2000-08-23
US09/645,032 2000-08-23

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WO2002017384A1 true WO2002017384A1 (fr) 2002-02-28

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1753014B1 (fr) * 2005-08-09 2009-03-25 Shin-Etsu Chemical Co., Ltd. Elément de chauffage
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20210175049A1 (en) * 2019-12-06 2021-06-10 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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EP0693774A2 (fr) * 1994-07-19 1996-01-24 International Business Machines Corporation Caractérisation, modelage, et forme d'un mandrin électrostatique ayant une uniformité améliorée de la température de la plaquette
US5777838A (en) * 1995-12-19 1998-07-07 Fujitsu Limited Electrostatic chuck and method of attracting wafer
US5880923A (en) * 1997-06-09 1999-03-09 Applied Materials Inc. Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system
WO1999052144A1 (fr) * 1998-04-03 1999-10-14 Applied Materials, Inc. Bloc d'alimentation a support electrostatique
WO2000019519A1 (fr) * 1998-09-30 2000-04-06 Lam Research Corporation Procede et appareil permettant de retirer d'un mandrin electrostatique des pieces dielectriques dans des dispositifs de traitement par le vide

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
EP0693774A2 (fr) * 1994-07-19 1996-01-24 International Business Machines Corporation Caractérisation, modelage, et forme d'un mandrin électrostatique ayant une uniformité améliorée de la température de la plaquette
US5675471A (en) * 1994-07-19 1997-10-07 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5777838A (en) * 1995-12-19 1998-07-07 Fujitsu Limited Electrostatic chuck and method of attracting wafer
US5880923A (en) * 1997-06-09 1999-03-09 Applied Materials Inc. Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system
WO1999052144A1 (fr) * 1998-04-03 1999-10-14 Applied Materials, Inc. Bloc d'alimentation a support electrostatique
WO2000019519A1 (fr) * 1998-09-30 2000-04-06 Lam Research Corporation Procede et appareil permettant de retirer d'un mandrin electrostatique des pieces dielectriques dans des dispositifs de traitement par le vide

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US8747559B2 (en) 2003-06-30 2014-06-10 Lam Research Corporation Substrate support having dynamic temperature control
EP1753014B1 (fr) * 2005-08-09 2009-03-25 Shin-Etsu Chemical Co., Ltd. Elément de chauffage
US7683295B2 (en) 2005-08-09 2010-03-23 Shin-Etsu Chemical Co., Ltd. Heating element
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US9883549B2 (en) 2006-07-20 2018-01-30 Applied Materials, Inc. Substrate support assembly having rapid temperature control
US10257887B2 (en) 2006-07-20 2019-04-09 Applied Materials, Inc. Substrate support assembly
US20210175049A1 (en) * 2019-12-06 2021-06-10 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US11705309B2 (en) * 2019-12-06 2023-07-18 Tokyo Electron Limited Substrate processing method

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