WO2002011286A1 - Vorrichtung zur schnellen kurzschlussabsicherung bei einem leistungshalbleiter - Google Patents
Vorrichtung zur schnellen kurzschlussabsicherung bei einem leistungshalbleiter Download PDFInfo
- Publication number
- WO2002011286A1 WO2002011286A1 PCT/DE2001/002704 DE0102704W WO0211286A1 WO 2002011286 A1 WO2002011286 A1 WO 2002011286A1 DE 0102704 W DE0102704 W DE 0102704W WO 0211286 A1 WO0211286 A1 WO 0211286A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power semiconductor
- load
- circuit
- current
- voltage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
Definitions
- the invention is based on a device for fast short-circuit protection in a power semiconductor according to the preamble of the independent claim.
- a sense highside switch is described in the article "Sense highside switch performs fuse functions" by A. Blessing, A. Graf, P. Sommer in the magazine “Components 5-6 / 97", pages 32 to 35 (BTS 640S2), in which important protective functions are integrated.
- An overtemperature cut-off and a current limitation are provided, which are constantly active. At a so-called sense output of the power semiconductor one can
- Load current proportional signal can be tapped. This sense voltage is evaluated by an A / D converter of a microcontroller and processed for example for security purposes.
- a short-circuit shutdown of the power semiconductor that can be applied in terms of value is desirable.
- the applicable short-circuit shutdown is particularly important in connection with a dual-voltage on-board electrical system (12 V / 42 V) in order to make a short circuit between the two voltage levels manageable.
- Short-circuit protection means are present between the two voltage levels of the multi-voltage electrical system, which largely reduce a short circuit and / or reduce the effects of a short circuit between the two voltages and / or protect or switch off endangered consumers in the event of a short circuit.
- the evaluation of a possible overcurrent is carried out under program control in a microcontroller.
- the device according to the invention for fast short-circuit protection in a power semiconductor comprises at least one power semiconductor via which a load current can be applied to at least one electrical load.
- Current detection means are provided which provide a measure of the load current acting on the electrical load.
- a semiconductor protection circuit controls the power semiconductor in a protective operation in the event of impending impairment of the power semiconductor.
- Semiconductor protection circuit at least one further electronic component is provided which compares the load current or a measure of the load current with a limit value, monitoring means triggering the power semiconductor into a protective operation relating to the electrical load when the limit value is exceeded or fallen below.
- the additional load current monitoring is implemented according to the invention by a hardware circuit. Compared to a software-based evaluation, there are advantages with regard to the speed of possible overload detection. This means that countermeasures can be initiated quickly that reliably protect the electrical load.
- the value of the short-circuit shutdown of the power semiconductor can preferably be set by the user. The user is thus given the option of using a suitable
- a locking circuit which activates the Power semiconductor is prevented if the limit is fallen below in the meantime. Since the switch-on and switch-off processes particularly endanger the power semiconductor and the electrical load, the locking circuit increases the protection against destruction of the
- Power semiconductor and / or the electrical load The state of the lock can be queried for further processing.
- the power semiconductor can only resume normal operation with a specific unlocking signal. This targeted influencing increases the possibility for a user to influence the protective function of the power semiconductor.
- FIG. 1 and 2 show typical configurations of the power semiconductor
- FIG. 3 shows an additional protective function implemented in the power semiconductor
- FIG. 4 shows a protective function implemented outside the power semiconductor
- FIG. 5 shows a typical dual-voltage electrical system in which the power semiconductors are preferably used.
- An integrated power semiconductor 10 has at least one load output 12, via which an electrical load 24 can be supplied with a load current IL that is connected to ground 26 flows off.
- a switching means 20 is provided, when it is closed, a control input 16 of the power semiconductor 10 is connected to a logic reference potential 22.
- the power semiconductor 10 has a current mirror output 14, in which a current proportional to the load current IL flows through a measuring resistor 18 to the logic reference potential 22. The voltage drop VIS caused at the measuring resistor 18 is evaluated.
- the individual components of the power semiconductor 10 are shown in more detail.
- Various protection and evaluation functions are provided, such as a voltage source 30, an overvoltage protection 32, a current limitation 34, a gate protection 36, the actual circuit breaker 38, a voltage sensor 40, a charge pump 42, a protective circuit for inductive loads 44, and a current detection 46, an electrostatic discharge protection 48, a logic circuit 50 and a temperature sensor 52.
- the external components correspond to those in FIG. 1.
- the exemplary embodiment according to FIG. 3 serves for an internal protective circuit which acts directly on the current limitation 34 of the power semiconductor 10.
- the current mirror output 14 is connected via the measuring resistor 18 to the control input 16 in the event that the switching means 20 is closed and the power semiconductor 10 has thus been activated.
- the voltage VIS dropping across the measuring resistor 18 is compared by a comparator 62 with a reference voltage 60.
- the output signal of the comparator 62 is fed to the current limiter 34.
- the voltage VIS dropping across the measuring resistor 18 is smoothed by a filter 70, which consists, for example, of an RC element.
- the smoothed output voltage becomes a transistor stage 72 or alternatively an inverting one
- Logic reference potential 22 is set in order to apply the load current IL to the electrical load 24 (not shown in FIG. 4).
- G designate the generator, for example a claw-pole alternator that is driven by the vehicle engine.
- the generator G supplies an output voltage UO of, for example, 42 V, which leads directly to the Charge the battery Bl with 36 V nominal voltage.
- the line resistance between the generator G and the battery Bl is symbolized by the resistors R1 and R2.
- the consumers that are to be supplied with the voltage UO are connected via a signal / power distributor VI.
- three consumers R6, R7 and R8 are shown as examples of the electrical load 24, which can be connected to the generator G, for example, via power semiconductors Hl, H2 and H3. Due to their design, these power semiconductors Hl, H2 and H3 have the inverse diodes Dl, D2 and D3 and the internal resistors R3, R4 and R5.
- a second battery B2 is charged by the generator G via a direct voltage converter W1.
- the voltage Ul is supplied from the voltage converter Wl to the battery B2 via the
- the resistance denoted by R9 also includes the internal resistance of the battery B2.
- the battery B2 is used to supply consumers who require a lower voltage, for example 12 V or 14 V.
- the connection is made via the signal power distributor V2.
- These consumers are designated R13, R14 and R15, they can be connected via the power semiconductors H4, H5 and H6, which each have the inverse diodes D4, D5 and D6.
- the line resistances between the consumers, R13, R14 and R15 are labeled RIO, Rll and R12.
- this decision also includes a Zener diode ZI and a further diode D7, which together form an overvoltage protection.
- the Zener diode ZI and the further diode D7 are only examples as possible
- Called voltage limiting means It is also possible to use other limiter circuits.
- the consumers are selected for one or the other voltage level depending on the
- the starter can be connected to either the 12V battery or the 36 V battery.
- the switch with the short-circuited 14 V load becomes conductive over the inverse diode of the power semiconductor in question and thus applies all 14 V consumers to 42 V, which means that the consumers that are not designed for it are at risk.
- Such a short circuit is shown in FIG.
- a resistor RK which is on the voltage side between the resistors R8 and R13, represents a short circuit ⁇ , the effects of which are reduced according to the invention. How a short circuit symbolized by the resistor R16 can be limited in its effects is explained in more detail below.
- the measuring resistor 18 converts the output current IS of the current mirror output 14 into a voltage signal VIS, which is proportional to the load current IL, generally directly proportional.
- the measuring resistor 18 is dimensioned in such a way that the current range of interest for the application, which is located between the value zero and the peak current, reaches a voltage range which is customary for an A / D converter, for example 0 to 5 V. is mapped.
- the power semiconductor 10 is to be controlled in a protective operation.
- Protective operation is understood to mean, for example, operation with a current limitation or the complete shutdown of the power semiconductor 10.
- the comparator 62 compares the voltage VIS dropping across the measuring resistor 18 with the reference voltage 60. For the reasons already mentioned above, this is located at 5.5 V, for example, in order to reliably detect that the working range of the load current IL has been exceeded. If the voltage VIS falling across the measuring resistor 18 exceeds the reference voltage 60, the output signal of the comparator 62 activates the current limitation 34 already integrated in the power semiconductor 10. The current limiting circuit either effects the immediate one Switching off the power semiconductor 10, 38 or regulating the voltage drop across the measuring resistor 18 to a maximum of 5.5 V. This would limit the load current IL to a value proportional to the reference voltage 60.
- the user can adapt the reference voltage 60 as desired to the respective application or to the electrical load 24 to be controlled.
- This additional circuit is relatively small in comparison to the already existing circuit of the power semiconductor 10 and thus increases the additional costs only slightly.
- the functionality of the power semiconductor 10 is greatly upgraded without having to intervene in the semiconductor switch itself. This means that the user's previous interconnection can remain the same.
- the load 24 is acted upon by the load current IL.
- the signal proportional to the load current IL is available at the current mirror output 14.
- the voltage VIS falling across the measuring resistor 18 is smoothed by the (optional) RC element 70. That so smoothed output signal is fed to either the transistor stage 72 or the comparator stage 74 in order to carry out a monitoring for a predetermined limit value being exceeded.
- the limit value is selected as the VCC signal, that is to say approximately 5 V.
- either the transistor stage 72 or the comparator stage 74 output an output signal of logic zero.
- This logic zero output signal is fed to the first AND gate 76, the output signal of which therefore also assumes the logic zero value. Since the output signal of the first AND gate 76 is also used as an input signal of the second AND gate 78, the output signal of the second AND gate 78 also changes its logic state to logic zero.
- the switching means 86 is also no longer activated, so that the control input 16 is no longer set to logic reference potential 22. As a result, the power semiconductor 10 is switched off. The current flow IL through the load 24 is omitted.
- a locking circuit is provided.
- the output signal of the first AND gate 76 arrives at the second input of the first AND gate 76 via the self-holding resistor 80.
- the logic zero signal is also present when the monitoring function is activated at the second input of the AND gate 76, so that the output signals of the two AND gates 76, 78 always remain at logic zero.
- the status of the locking circuit can be queried via signal 84. It can be used for further evaluation purposes.
- a locking signal with the logic zero status indicates that the protective function has been activated.
- the user In order to be able to put the power semiconductors 10 back into operation, the user must send a signal 84 with the state logic one to the second input of the first and Lay gate 76.
- the first AND gate 76 Since normally the load current IL will no longer have exceeded the limit value VCC, the first AND gate 76 has two logic one signals applied to it, so that its output signal also assumes the value logic one. In this way, the control signal 82 is switched through to the output of the second AND gate 78 in order to permit a desired activation of the switching means 86 with an associated application of the control input 16. The semiconductor 10 can thus be controlled again such that the load current IL can flow through the electrical load 24.
- the power semiconductors 10 can be used as power semiconductors Hl-H6 in the manner already described. Especially in the event of a short circuit between the different voltage levels U1 and UO of the multi-voltage subnet, the electronic components help to detect an impermissible load current IL at an early stage and to initiate countermeasures.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7001258A KR20030040377A (ko) | 2000-07-29 | 2001-07-18 | 전력용 반도체 내의 급속 쇼트 보호 장치 |
JP2002515702A JP2004505599A (ja) | 2000-07-29 | 2001-07-18 | 電力半導体における迅速な短絡防止装置 |
AU2001283775A AU2001283775A1 (en) | 2000-07-29 | 2001-07-18 | Device for rapid short-circuit protection in a power semiconductor |
EP01962565A EP1307964A1 (de) | 2000-07-29 | 2001-07-18 | Vorrichtung zur schnellen kurzschlussabsicherung bei einem leistungshalbleiter |
US10/343,346 US20040051398A1 (en) | 2000-07-29 | 2001-07-18 | Device for rapid short-circuit protection in a power semiconductor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10036983A DE10036983A1 (de) | 2000-07-29 | 2000-07-29 | Vorrichtung zur schnellen Kurzschlussabsicherung bei einem Leistungshalbleiter |
DE10036983.9 | 2000-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002011286A1 true WO2002011286A1 (de) | 2002-02-07 |
Family
ID=7650641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/002704 WO2002011286A1 (de) | 2000-07-29 | 2001-07-18 | Vorrichtung zur schnellen kurzschlussabsicherung bei einem leistungshalbleiter |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040051398A1 (de) |
EP (1) | EP1307964A1 (de) |
JP (1) | JP2004505599A (de) |
KR (1) | KR20030040377A (de) |
AU (1) | AU2001283775A1 (de) |
DE (1) | DE10036983A1 (de) |
WO (1) | WO2002011286A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007032960B4 (de) * | 2007-07-14 | 2011-02-24 | Beru Ag | Schalteinrichtung |
DE102008035664B3 (de) * | 2008-07-31 | 2010-02-25 | Continental Automotive Gmbh | Schaltungssanordnung und System |
DE102012208115B4 (de) | 2012-05-15 | 2023-02-16 | Lisa Dräxlmaier GmbH | Vorrichtung und Verfahren zur intelligenten Absicherung einer elektrischen Leitung |
DE102015221729A1 (de) | 2015-11-05 | 2017-05-11 | Robert Bosch Gmbh | Verfahren zum Überwachen eines elektrischen Bordnetzes |
DE102016223139B4 (de) | 2016-11-23 | 2022-03-17 | Vitesco Technologies GmbH | Verfahren zum Betreiben einer elektrischen Komponente mittels eines Stromrichters in einem Fahrzeugbordnetz mit mehreren Bordnetzzweigen |
ES2929540T3 (es) * | 2019-02-22 | 2022-11-30 | Future Systems Besitz Gmbh | Aparato para la conmutación y protección de una carga |
DE102019131192A1 (de) * | 2019-11-19 | 2021-05-20 | Bayerische Motoren Werke Aktiengesellschaft | Schutzschaltung mit Leistungshalbleiterschalter für ein Hochvoltbordnetz, Verfahren zum Betreiben eines Leistungshalbleiterschalters, Hochvoltbordnetz sowie Kraftfahrzeug |
DE102020109948A1 (de) | 2020-04-09 | 2021-10-14 | HELLA GmbH & Co. KGaA | Kraftfahrzeugbordnetz und elektronische Sicherung für ein Kraftfahrzeugbordnetz |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4750079A (en) * | 1986-05-27 | 1988-06-07 | Motorola, Inc. | Low side switch integrated circuit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09331625A (ja) * | 1996-06-11 | 1997-12-22 | Yazaki Corp | インテリジェントパワースイッチ及びスイッチング装置 |
US6011416A (en) * | 1997-02-19 | 2000-01-04 | Harness System Technologies Research Ltd. | Switch circuit having excess-current detection function |
DE19712261A1 (de) * | 1997-03-24 | 1998-10-08 | Siemens Ag | Elektronische Sicherung |
JP3363074B2 (ja) * | 1997-08-08 | 2003-01-07 | 株式会社オートネットワーク技術研究所 | 過電流検知回路 |
DE19846319C1 (de) * | 1998-10-08 | 2000-02-17 | Daimler Chrysler Ag | Energieversorgungsschaltung für ein Kraftfahrzeugbordnetz mit zwei Spannungsversorgungszweigen |
-
2000
- 2000-07-29 DE DE10036983A patent/DE10036983A1/de not_active Ceased
-
2001
- 2001-07-18 JP JP2002515702A patent/JP2004505599A/ja active Pending
- 2001-07-18 AU AU2001283775A patent/AU2001283775A1/en not_active Abandoned
- 2001-07-18 US US10/343,346 patent/US20040051398A1/en not_active Abandoned
- 2001-07-18 KR KR10-2003-7001258A patent/KR20030040377A/ko not_active Application Discontinuation
- 2001-07-18 WO PCT/DE2001/002704 patent/WO2002011286A1/de active Application Filing
- 2001-07-18 EP EP01962565A patent/EP1307964A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4750079A (en) * | 1986-05-27 | 1988-06-07 | Motorola, Inc. | Low side switch integrated circuit |
Non-Patent Citations (2)
Title |
---|
BAYERER R: "ANWENDUNG, ANSTEUERUNG UND KURZSCHLUSSSCHUTZ VON IGBT", ELEKTROTECHNISCHE ZEITSCHRIFT - ETZ, VDE VERLAG GMBH. BERLIN, DE, vol. 110, no. 10, 1 May 1989 (1989-05-01), pages 472 - 474-476-477, XP000096664, ISSN: 0948-7387 * |
GRAF A ET AL: "42V AUTOMOTIVE SYSTEMS CUT CHIP COSTS", COMPONENTS, SIEMENS AKTIENGESELLSCHAFT. MUNCHEN, DE, vol. 32, no. 3, 1997, pages 26 - 29, XP000735458, ISSN: 0945-1137 * |
Also Published As
Publication number | Publication date |
---|---|
EP1307964A1 (de) | 2003-05-07 |
AU2001283775A1 (en) | 2002-02-13 |
JP2004505599A (ja) | 2004-02-19 |
KR20030040377A (ko) | 2003-05-22 |
US20040051398A1 (en) | 2004-03-18 |
DE10036983A1 (de) | 2002-02-14 |
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