WO2002007194A8 - Cleaning gas for semiconductor production equipment - Google Patents

Cleaning gas for semiconductor production equipment

Info

Publication number
WO2002007194A8
WO2002007194A8 PCT/JP2001/006164 JP0106164W WO0207194A8 WO 2002007194 A8 WO2002007194 A8 WO 2002007194A8 JP 0106164 W JP0106164 W JP 0106164W WO 0207194 A8 WO0207194 A8 WO 0207194A8
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
production equipment
semiconductor production
gas
cleaning gas
Prior art date
Application number
PCT/JP2001/006164
Other languages
French (fr)
Other versions
WO2002007194A3 (en
WO2002007194A2 (en
Inventor
Hiromoto Ohno
Toshio Ohi
Shuji Yoshida
Manabu Ohhira
Koutarou Tanaka
Original Assignee
Showa Denko Kk
Hiromoto Ohno
Toshio Ohi
Shuji Yoshida
Manabu Ohhira
Koutarou Tanaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000397269A external-priority patent/JP2002198357A/en
Priority claimed from JP2001189388A external-priority patent/JP2002100618A/en
Application filed by Showa Denko Kk, Hiromoto Ohno, Toshio Ohi, Shuji Yoshida, Manabu Ohhira, Koutarou Tanaka filed Critical Showa Denko Kk
Priority to AU2001271063A priority Critical patent/AU2001271063A1/en
Publication of WO2002007194A2 publication Critical patent/WO2002007194A2/en
Publication of WO2002007194A3 publication Critical patent/WO2002007194A3/en
Publication of WO2002007194A8 publication Critical patent/WO2002007194A8/en
Priority to HK03104036A priority patent/HK1051934A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

The present invention relates to (1) a cleaning gas for cleaning semiconductor production equipment, obtained by mixing SF6 and one or both of F2 with and NF3 with an inert gas at a specific ratio; (2) a cleaning gas for cleaning semiconductor production equipment, obtained by mixing SF6 and one or both of F2 and NF3 with an inert gas and an oxygen-containing gas at a specific ratio; (3) a method for cleaning semiconductor production equipment using the gas; and (4) a method for producing a semiconductor device including a cleaning step using the cleaning gas. By using the cleaning gas for semiconductor production equipment of the present invention which is high in the etching rate, efficient cleaning and production of semiconductor production equipment with excellent cost performance can be achieved.
PCT/JP2001/006164 2000-07-18 2001-07-17 Cleaning gas for semiconductor production equipment WO2002007194A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2001271063A AU2001271063A1 (en) 2000-07-18 2001-07-17 Cleaning gas for semiconductor production equipment
HK03104036A HK1051934A1 (en) 2000-07-18 2003-06-09 Cleaning gas for semiconductor production equipment

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2000217610 2000-07-18
JP2000-217610 2000-07-18
US23081100P 2000-09-07 2000-09-07
US60/230,811 2000-09-07
JP2000-397269 2000-12-21
JP2000397269A JP2002198357A (en) 2000-12-27 2000-12-27 Cleaning gas and cleaning method of semiconductor manufacturing apparatus
US26126501P 2001-01-16 2001-01-16
US60/261,265 2001-01-16
JP2001-189388 2001-06-22
JP2001189388A JP2002100618A (en) 2000-07-18 2001-06-22 Cleaning gas for semiconductor manufacturing apparatus and its method of cleaning

Publications (3)

Publication Number Publication Date
WO2002007194A2 WO2002007194A2 (en) 2002-01-24
WO2002007194A3 WO2002007194A3 (en) 2002-04-18
WO2002007194A8 true WO2002007194A8 (en) 2002-05-30

Family

ID=27531608

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006164 WO2002007194A2 (en) 2000-07-18 2001-07-17 Cleaning gas for semiconductor production equipment

Country Status (3)

Country Link
KR (1) KR100485743B1 (en)
AU (1) AU2001271063A1 (en)
WO (1) WO2002007194A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234299A (en) * 2002-02-12 2003-08-22 Research Institute Of Innovative Technology For The Earth Cleaning gas and etching gas
US6886573B2 (en) 2002-09-06 2005-05-03 Air Products And Chemicals, Inc. Plasma cleaning gas with lower global warming potential than SF6
FR2887245B1 (en) * 2005-06-21 2007-11-02 Air Liquide PROCESS FOR THE PREPARATION OF A GAS OR MIXTURE OF GAS CONTAINING MOLECULAR FLUORINE
US20080110744A1 (en) * 2004-06-30 2008-05-15 Jean-Marc Girard Method for the Preparation of a Gas or Mixture of Gases Containing Molecular Fluorine
FR2872505B1 (en) * 2004-06-30 2007-02-02 Air Liquide FLUORINE GAS GENERATOR
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
US8623148B2 (en) 2009-09-10 2014-01-07 Matheson Tri-Gas, Inc. NF3 chamber clean additive
JP6661283B2 (en) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 Cleaning method and plasma processing method
US11961719B2 (en) 2020-06-25 2024-04-16 Hitachi High-Tech Corporation Vacuum processing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02129371A (en) * 1988-11-08 1990-05-17 Canon Inc Method for cleaning device for forming deposited film
JPH0729877A (en) * 1991-12-02 1995-01-31 Applied Materials Inc Dry method for removing undesired residual oxide and/or silicon from processed semiconductor wafer

Also Published As

Publication number Publication date
KR20020032581A (en) 2002-05-03
WO2002007194A3 (en) 2002-04-18
WO2002007194A2 (en) 2002-01-24
AU2001271063A1 (en) 2002-01-30
KR100485743B1 (en) 2005-04-28

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