JP2002198364A5 - - Google Patents
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- JP2002198364A5 JP2002198364A5 JP2000392000A JP2000392000A JP2002198364A5 JP 2002198364 A5 JP2002198364 A5 JP 2002198364A5 JP 2000392000 A JP2000392000 A JP 2000392000A JP 2000392000 A JP2000392000 A JP 2000392000A JP 2002198364 A5 JP2002198364 A5 JP 2002198364A5
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- JP
- Japan
- Prior art keywords
- gas
- semiconductor device
- manufacturing
- containing silicon
- gas containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【特許請求の範囲】
【請求項１】
珪素を含む絶縁膜を形成するプラズマＣＶＤ法において、
１０〜６０ＭＨｚの高周波電力を２０〜７０％のデューティー比でカソードに断続的に印加し、気体を導入してプラズマを断続的に発生させ、絶縁膜を形成することを特徴とする半導体装置の作製方法。
【請求項２】
請求項１において、
前記気体は、珪素を含む気体であることを特徴とする半導体装置の作製方法。
【請求項３】
請求項１において、
前記気体は、珪素を含む気体、酸素を含む気体および窒素を含む気体であることを特徴とする半導体装置の作製方法。
【請求項４】
請求項１において、
前記気体は、珪素の水素化物を含む気体、酸素を含む気体および窒素を含む気体であることを特徴とする半導体装置の作製方法。
【請求項５】
請求項２または請求項３において、
前記珪素を含む気体とは、ＳｉＨ４またはＳｉ２Ｈ６を含む気体であることを特徴とする半導体装置の作製方法。
【請求項６】
請求項４において、
前記珪素の水素化物を含む気体とは、ＳｉＨ４またはＳｉ２Ｈ６を含む気体であることを特徴とする半導体装置の作製方法。
【請求項７】
請求項３または請求項４において、
前記窒素を含む気体とは、Ｎ２Ｏを含む気体であることを特徴とする半導体装置の作製方法。
【請求項８】
請求項１乃至請求項７のいずれか一において、
前記高周波電力のパルス周波数が１〜１０ｋＨｚであることを特徴とする半導体装置の作製方法。
[Claims]
(1)
In a plasma CVD method for forming an insulating film containing silicon,
Intermittently applied to the cathode 20 to 70% duty ratio RF power 10～60MHz, by introducing a gas intermittently to generate a plasma, a semiconductor device and forming a insulation Enmaku Production method.
(2)
In claim 1,
The gas, a method for manufacturing a semiconductor device, characterized in that a gas containing silicon.
(3)
In claim 1,
The gas, a method for manufacturing a semiconductor device which is a gas including a gas containing silicon, the gas and nitrogen containing oxygen.
(4)
In claim 1,
The gas, a method for manufacturing a semiconductor device which is a gas including a gas containing a hydride of silicon, the gas and nitrogen containing oxygen.
Claim 5.
In claim 2 or claim 3 ,
The method for manufacturing a semiconductor device, wherein the gas containing silicon is a gas containing SiH 4 or Si 2 H 6 .
6.
In claim 4 ,
The method for manufacturing a semiconductor device, wherein the gas containing silicon hydride is a gas containing SiH 4 or Si 2 H 6 .
7.
In claim 3 or claim 4 ,
Gas and is comprising the nitrogen, a method for manufacturing a semiconductor device which is a gas comprising N 2 O.
Claim 8.
In any one of claims 1 to 7,
The method for manufacturing a semiconductor device pulse frequency of the high frequency power, characterized in 1~10kHz der Rukoto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000392000A JP4610080B2 (en) | 2000-12-25 | 2000-12-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000392000A JP4610080B2 (en) | 2000-12-25 | 2000-12-25 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002198364A JP2002198364A (en) | 2002-07-12 |
| JP2002198364A5 true JP2002198364A5 (en) | 2007-11-22 |
| JP4610080B2 JP4610080B2 (en) | 2011-01-12 |
Family
ID=18858056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000392000A Expired - Fee Related JP4610080B2 (en) | 2000-12-25 | 2000-12-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4610080B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1313867C (en) * | 2002-09-17 | 2007-05-02 | 统宝光电股份有限公司 | Equipment for assembling insulation film used for making LCD of film transistor |
| JP4135541B2 (en) * | 2003-03-26 | 2008-08-20 | ソニー株式会社 | Plasma surface treatment method |
| JP2007123174A (en) * | 2005-10-31 | 2007-05-17 | Canon Inc | Organic electroluminescent element |
| JP2007123173A (en) * | 2005-10-31 | 2007-05-17 | Canon Inc | Organic electroluminescent element |
| WO2009104531A1 (en) * | 2008-02-19 | 2009-08-27 | 株式会社 アルバック | Film forming method |
| KR20180118803A (en) * | 2011-10-07 | 2018-10-31 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods for depositing a silicon containing layer with argon gas dilution |
| JP6370048B2 (en) * | 2013-01-21 | 2018-08-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| CN105977179A (en) * | 2016-05-31 | 2016-09-28 | 宁夏银星能源光伏发电设备制造有限公司 | Tubular PECVD film thickness calculating method |
| CN111108581A (en) * | 2017-09-21 | 2020-05-05 | 应用材料公司 | High aspect ratio deposition |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03259512A (en) * | 1990-03-09 | 1991-11-19 | Fujitsu Ltd | High frequency plasma chemical vapor deposition system |
| JPH07183236A (en) * | 1993-11-11 | 1995-07-21 | Nissin Electric Co Ltd | Method and device for plasma cvd |
| JP3520577B2 (en) * | 1994-10-25 | 2004-04-19 | 株式会社日立製作所 | Plasma processing equipment |
| JP2820070B2 (en) * | 1995-08-11 | 1998-11-05 | 日本電気株式会社 | Plasma chemical vapor deposition and its equipment. |
| JP2743895B2 (en) * | 1995-12-22 | 1998-04-22 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JPH09263948A (en) * | 1996-03-29 | 1997-10-07 | Toshiba Corp | Formation of thin film by using plasma, thin film producing apparatus, etching method and etching device |
| JPH10163317A (en) * | 1996-11-28 | 1998-06-19 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| JP3562357B2 (en) * | 1998-12-22 | 2004-09-08 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JP3533968B2 (en) * | 1998-12-22 | 2004-06-07 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JP3827056B2 (en) * | 1999-03-17 | 2006-09-27 | キヤノンマーケティングジャパン株式会社 | Method for forming interlayer insulating film and semiconductor device |
-
2000
- 2000-12-25 JP JP2000392000A patent/JP4610080B2/en not_active Expired - Fee Related
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