WO2002003515A3 - Gain voltage control of sampled grating distributed bragg reflector lasers - Google Patents

Gain voltage control of sampled grating distributed bragg reflector lasers Download PDF

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Publication number
WO2002003515A3
WO2002003515A3 PCT/US2001/020726 US0120726W WO0203515A3 WO 2002003515 A3 WO2002003515 A3 WO 2002003515A3 US 0120726 W US0120726 W US 0120726W WO 0203515 A3 WO0203515 A3 WO 0203515A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
gain
bragg reflector
distributed bragg
voltage
Prior art date
Application number
PCT/US2001/020726
Other languages
French (fr)
Other versions
WO2002003515A2 (en
Inventor
Paul F Crowder
Larry A Coldren
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Priority to AU2001273073A priority Critical patent/AU2001273073A1/en
Publication of WO2002003515A2 publication Critical patent/WO2002003515A2/en
Publication of WO2002003515A3 publication Critical patent/WO2002003515A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating

Abstract

A gain voltage controller for use with a sampled grating distributed Bragg reflector (SGDBR) laser is presented. The controller for provides separate inputs to the laser including a front mirror current controlling a front mirror and a back mirror current controlling a back mirror to control the laser and a voltage monitor, coupled to a gain section of the laser for monitoring a gain voltage of the gain section and providing input of the gain voltage to the controller. The controller controls the front mirror current and the back mirror current to minimize the voltage monitored from the gain section of the laser.
PCT/US2001/020726 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers WO2002003515A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001273073A AU2001273073A1 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US21573900P 2000-06-29 2000-06-29
US21574200P 2000-06-29 2000-06-29
US21517000P 2000-06-29 2000-06-29
US60/215,170 2000-06-29
US60/215,739 2000-06-29
US60/215,742 2000-06-29

Publications (2)

Publication Number Publication Date
WO2002003515A2 WO2002003515A2 (en) 2002-01-10
WO2002003515A3 true WO2002003515A3 (en) 2002-04-18

Family

ID=27396084

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2001/020725 WO2002003514A2 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers
PCT/US2001/020726 WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020725 WO2002003514A2 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers

Country Status (2)

Country Link
AU (2) AU2001273073A1 (en)
WO (2) WO2002003514A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
CN108011294A (en) * 2017-12-30 2018-05-08 武汉理工光科股份有限公司 Pulsed swept light source and production method based on semiconductor tunable laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622672A (en) * 1984-01-20 1986-11-11 At&T Bell Laboratories Self-stabilized semiconductor lasers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835650A (en) * 1995-11-16 1998-11-10 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US6101200A (en) * 1997-12-24 2000-08-08 Nortel Networks Corporation Laser module allowing simultaneous wavelength and power control
SE519081C3 (en) * 1998-01-21 2003-02-19 Altitun Ab Method and apparatus for optimizing the laser operating point and device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622672A (en) * 1984-01-20 1986-11-11 At&T Bell Laboratories Self-stabilized semiconductor lasers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ISHII H ET AL: "MODE STABILIZATION METHOD FOR SUPERSTRUCTURE-GRATING DBR LASERS", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 16, no. 3, 1 March 1998 (1998-03-01), pages 433 - 442, XP000751395, ISSN: 0733-8724 *
SARLET G ET AL: "WAVELENGTH AND MODE STABILIZATION OF WIDELY TUNABLE SG-DBR AND SSG-DBR LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 11, November 1999 (1999-11-01), pages 1351 - 1353, XP000893767, ISSN: 1041-1135 *

Also Published As

Publication number Publication date
WO2002003515A2 (en) 2002-01-10
AU2001273072A1 (en) 2002-01-14
WO2002003514A2 (en) 2002-01-10
AU2001273073A1 (en) 2002-01-14
WO2002003514A3 (en) 2002-04-18

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