AU2001273072A1 - Power and wavelength control of sampled grating distributed bragg reflector lasers - Google Patents
Power and wavelength control of sampled grating distributed bragg reflector lasersInfo
- Publication number
- AU2001273072A1 AU2001273072A1 AU2001273072A AU7307201A AU2001273072A1 AU 2001273072 A1 AU2001273072 A1 AU 2001273072A1 AU 2001273072 A AU2001273072 A AU 2001273072A AU 7307201 A AU7307201 A AU 7307201A AU 2001273072 A1 AU2001273072 A1 AU 2001273072A1
- Authority
- AU
- Australia
- Prior art keywords
- power
- bragg reflector
- distributed bragg
- wavelength control
- sampled grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21573900P | 2000-06-29 | 2000-06-29 | |
US21517000P | 2000-06-29 | 2000-06-29 | |
US21574200P | 2000-06-29 | 2000-06-29 | |
US60215170 | 2000-06-29 | ||
US60215739 | 2000-06-29 | ||
US60215742 | 2000-06-29 | ||
PCT/US2001/020725 WO2002003514A2 (en) | 2000-06-29 | 2001-06-29 | Power and wavelength control of sampled grating distributed bragg reflector lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001273072A1 true AU2001273072A1 (en) | 2002-01-14 |
Family
ID=27396084
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001273072A Abandoned AU2001273072A1 (en) | 2000-06-29 | 2001-06-29 | Power and wavelength control of sampled grating distributed bragg reflector lasers |
AU2001273073A Abandoned AU2001273073A1 (en) | 2000-06-29 | 2001-06-29 | Gain voltage control of sampled grating distributed bragg reflector lasers |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001273073A Abandoned AU2001273073A1 (en) | 2000-06-29 | 2001-06-29 | Gain voltage control of sampled grating distributed bragg reflector lasers |
Country Status (2)
Country | Link |
---|---|
AU (2) | AU2001273072A1 (en) |
WO (2) | WO2002003515A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
WO2006039341A2 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
CN108011294A (en) * | 2017-12-30 | 2018-05-08 | 武汉理工光科股份有限公司 | Pulsed swept light source and production method based on semiconductor tunable laser |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622672A (en) * | 1984-01-20 | 1986-11-11 | At&T Bell Laboratories | Self-stabilized semiconductor lasers |
US5835650A (en) * | 1995-11-16 | 1998-11-10 | Matsushita Electric Industrial Co., Ltd. | Optical apparatus and method for producing the same |
US6101200A (en) * | 1997-12-24 | 2000-08-08 | Nortel Networks Corporation | Laser module allowing simultaneous wavelength and power control |
SE519081C3 (en) * | 1998-01-21 | 2003-02-19 | Altitun Ab | Method and apparatus for optimizing the laser operating point and device |
-
2001
- 2001-06-29 AU AU2001273072A patent/AU2001273072A1/en not_active Abandoned
- 2001-06-29 WO PCT/US2001/020726 patent/WO2002003515A2/en active Application Filing
- 2001-06-29 AU AU2001273073A patent/AU2001273073A1/en not_active Abandoned
- 2001-06-29 WO PCT/US2001/020725 patent/WO2002003514A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002003514A3 (en) | 2002-04-18 |
WO2002003515A3 (en) | 2002-04-18 |
AU2001273073A1 (en) | 2002-01-14 |
WO2002003515A2 (en) | 2002-01-10 |
WO2002003514A2 (en) | 2002-01-10 |
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