WO2001099225A1

WO2001099225A1 - Composite substrate type circulator

Info

Publication number: WO2001099225A1
Application number: PCT/JP2001/005220
Authority: WO
Inventors: Osamu Myohga; Mitsuru Furuya; Yoshitsugu Okada
Original assignee: Nec Corporation
Priority date: 2000-06-23
Filing date: 2001-06-19
Publication date: 2001-12-27
Also published as: JP2002009508A

Abstract

A composite substrate type circulator comprising a conductive thin film formed on a ferrite disc (10) and a second dielectric material film (4) for constructing a circulator circuit, the conductive thin film being made of a three-layered laminate structure which is composed of a first conductive film (3) formed on the upper faces of the ferrite disc (10) and the second dielectric material film (4), a nonmagnetic conductive layer film (1) formed on the first conductive film (3), and a second conductive film (2) formed on said nonmagnetic conductive film (1).

Description

Description Composite substrate type circuit

The present invention relates to a circulator or an isolator used for a high-frequency communication device using a frequency band of a millimeter wave band as well as a microwave band. More specifically, the present invention relates to a light source embedded in a dielectric layer. The composite substrate type to be used is related to the evening or night sky. Background of the Invention

As a circulator used in high-frequency communication devices that use the microwave and millimeter-wave frequency bands, a composite substrate type circulator with a disc-shaped filler embedded in a dielectric layer has been used. I have.

This composite substrate type circulator has a dielectric layer, a disk-shaped X-light having the same thickness as the dielectric layer, and embedded in the dielectric layer, A ground electrode (ground) layer formed on the lower surface of the ferrite; a circular conductor portion formed on the dielectric layer and the upper surface of the ferrite; and having substantially the same planar shape as the disk-shaped ferrite; A signal circuit consisting of three microstrip lines extending from the conductor, and a, constitutes a drop-in type circuit.

For example, such a drop-in type circulator is disclosed in Japanese Patent Application Laid-Open Nos. 10-33512-09, 11-3551014, and 2000-2006. It is described in Japanese Patent Publication No. 8712.

The thickness of the dielectric layer and the disk-shaped ferrite, that is, the gap between the ground electrode (ground) layer on the lower surface and the signal circuit layer on the upper surface depends on the operating frequency range of the composite substrate type circulator. Selected.

In addition, this kind of composite substrate type circuit is actually using an insulating substrate, usually a dielectric substrate, as a base substrate, and the configuration from the dielectric layer to the signal circuit is as follows. For example, as described in Japanese Patent Application Laid-Open No. 2000-28686, It is formed on this dielectric substrate.

Conventionally, this type of composite board type circuit configuration has been used, for example, the shape of a signal circuit layer consisting of a circular conductor and three microstrip lines, and a disk-shaped X-light for the diameter of the circular conductor. Regarding the relative ratio of the diameters of the devices, various improvements and modifications in the element shape surface have been proposed.

However, the operating principle itself is based on the magnetic field formed by the high-frequency current input from one end of the three microstrip lines of the circuit, and the magnetic material, mainly a disk-shaped ferrite. There is no change in using the gyromagnetic phenomenon induced by the interaction with the magnetic field generated by the gyro.

That is, when a high-frequency current having a circuit-specific resonance frequency defined by the shape of the circulator circuit is input, the interaction between the magnetic field formed by the high-frequency current and the magnetic field of the disk-shaped ferrite causes The magnetic field induced by the high-frequency current is distributed in the surface of the circuit formation surface, and as a result, the high-frequency current is output to the other end of the microstrip line. Therefore, by designing the electrode shape and the like of the circuit so as to give a desired resonance frequency based on the magnetic field caused by the disk-shaped ferrite, a drop-in type circulator suitable for the target frequency region can be obtained. It can be manufactured. .

On the other hand, a drop-in type circulator, whose electrode shape is designed to give a specific resonance frequency based on the magnetic field caused by the disk-shaped ferrite, has a disk-like shape. In addition to the ferrite, a fine magnetic material is placed around the ferrite, and the weak magnetic field generated by the magnetic material is applied to the magnetic field caused by the disk-shaped ferrite, so that the resonance frequency of the entire circuit can be set to a certain width. The present inventors have already proposed a technique for fine-tuning in (Japanese Patent Laid-Open No. 11-355014).

Further, the present inventors, when configuring the above-described composite substrate type circuit, for example, into a shape as shown in FIG. 1, depending on the structure, the magnetic field of the circuit circuit initially designed It was found that the distribution was disturbed.

This will be described below.

The composite substrate type circulator shown in FIG. 1 includes a first dielectric substrate 6, a ground layer 5 formed on one surface of the first dielectric substrate 6, and a conductive adhesive on the ground layer 5. A ferrite disk 10 fixed via layer 11 and a second dielectric provided around ferrite disk 10 so as to embed ferrite disk 10 on ground layer 5. It comprises a body material film 4 and a circuit composed of a conductive thin film formed on the ferrite disk 10 and the second dielectric material film 4.

When viewed from above, the circuit composed of the conductive thin film includes a circular conductor 9, three microstrip lines 7 extending from the circular conductor 9 in three directions at equal circumferential angles, and vias 12. And a ground pad 8 arranged on both sides of the end of each microstrip line 7.

Here, it is assumed that the circuit composed of the conductive thin film has, for example, a three-layered structure of different metals of a Cu thin film, a magnetic Ni plating film, and an Au plating film in order from the bottom. In this case, when the magnetic Ni film forming the three-layer structure is magnetized, it is affected by the magnetic field generated by the magnetized magnetic Ni film, and the magnetic field distribution of the initially designed circuit circuit Is disturbed.

This disturbance of the magnetic field distribution is not predicted and controlled in advance, unlike the fine tuning of the resonance frequency using the additional magnetic material. Therefore, as a result, the frequency characteristics of the composite substrate type circulator are different from the target frequency characteristics.

Although the three-layer structure of dissimilar metals, such as Cu thin film, magnetic Ni plating film, and Au plating film, is preferable in terms of bonding properties, it causes fluctuations in electrical characteristics such as frequency characteristics over a circular cycle. It is a cause for improvement, and improvement is desired.

The present invention has been made in order to solve such problems, and an object of the present invention is to further improve the bonding property, which is an advantage of a three-layer structure of dissimilar metal, It is an object of the present invention to provide a multi-substrate circulator capable of eliminating a factor causing disturbance in a magnetic field distribution of a circulator circuit and suppressing variations in electric characteristics such as frequency characteristics over time.

More specifically, for example, the effect of an extra magnetic field caused by the use of a magnetic conductive material film, such as a multilayer structure of different metals such as a Cu thin film, a magnetic Ni film, and an Au film, is considered. Eliminates and further improves the bondability achieved with the three-layer structure of dissimilar metals It is an object of the present invention to provide a composite substrate type circulator using a new three-layer structure of dissimilar metals for a circulator circuit.

In addition, another object of the present invention is to provide an isolator configured using such a composite substrate type circuit. Disclosure of the invention

Note that the present inventors have found that circular characteristics such as frequency characteristics associated with the use of a magnetic conductive material film such as a Cu thin film, a magnetic Ni plating film, and a Au plating film of a dissimilar metal three-layer structure. Variations in the electrical characteristics of the evening were found because improvements were made to eliminate variations due to other factors that cause variations in frequency characteristics, circuit dimensional errors, alignment errors, etc. As a result of the elimination of characteristic variations, the cause of the overlooked variations became apparent.

The present inventors have elucidated that the cause of this variation is due to the use of a magnetic conductive material film in the three-layer structure of dissimilar metals. Between the Cu film and the uppermost Au film, a non-magnetic conductive material film other than Cu or Au is used instead of the Ni film of magnetic material. Thus, it has been confirmed that the above-mentioned factors that cause variations in the electrical characteristics of the circulating device such as the frequency characteristics can be eliminated, and the present invention has been completed.

That is, the present invention provides a first dielectric substrate, a metal film layer formed on one surface of the first dielectric substrate, and a ferrite fixed on the metal film layer via a conductive adhesive layer. A disk, a second dielectric material film provided around the fly disk so as to embed the fly disk on the metal film layer, and a ferrite disk and the second dielectric material film. A circuit comprising a formed conductive thin film, and a composite substrate type curator comprising: a conductive disk formed of a first conductive film formed on an upper surface of a flight disk and a second dielectric material film; A three-layer structure consisting of a conductive film, a non-magnetic conductive material film formed on the first conductive film, and a second conductive film formed on the non-magnetic conductive material film. A circulator for a composite substrate is provided.

For example, the first conductive film is preferably made of copper (Cu), The second conductive film is preferably made of gold (Au).

The nonmagnetic conductive material film can be composed of, for example, a Ni—P film.

The film thickness of the nonmagnetic conductive material film is preferably 0.3 or more and 5 or less, particularly preferably 1 μm or more and 3 μm or less.

For example, the nonmagnetic conductive material film, the second conductive film, or the first conductive film can be formed by plating.

The second dielectric material film is preferably, for example, a non-conductive resin film.

The first dielectric substrate is preferably, for example, an alumina substrate or a glass ceramic substrate.

The metal layer film can be made of, for example, a copper (Cu) film.

In addition, the nonmagnetic conductive material film is preferably a film made of a material having a higher pick-up hardness than magnetic Ni.

The first conductive film, the non-magnetic conductive material film, and the second conductive film can be configured to have the same shape. Alternatively, the nonmagnetic conductive material film is formed so as to cover the upper surface and side surfaces of the first conductive film, and the second conductive film is formed so as to cover the upper surface and side surfaces of the nonmagnetic conductive material film. Can be formed.

Preferably, the first conductive film has a thickness in the range from 2 to 7 m. Further, it is preferable that the second conductive film has a thickness in a range of 0.5 m to 5 m.

The present invention further comprises any one of the above-described composite substrate-type circuit elements, wherein one of three microstrip lines serving as an input terminal and an output terminal of a circuit formed of a conductive thin film has a termination resistor. A connected isolator is provided. Brief description of drawings

FIG. 1 is a plan view showing an example of the structure of a circulator circuit in a composite substrate type circulator according to one embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line AA of FIG.

FIG. 3 is a cross-sectional view taken along line BB of FIG.

Figure 4 shows the three-layer structure of the dissimilar metal in the composite substrate type circulator shown in Figure 1. FIG. 2 is a cross-sectional view showing an example of a cross-sectional shape of a microstrip line made of the above.

FIG. 5 is a cross-sectional view showing another example of a cross-sectional shape of a microstrip line having a three-layer structure of dissimilar metals in the composite substrate type circulator shown in FIG. Detailed Description of the Preferred Embodiment

In the composite substrate type circulator according to the present invention, the circulator circuit formed on the upper surface of the element and the conductive thin film forming the ground pad have a three-layer structure made of different metals. On the top layer of this three-layer structure, an Au film with much better bonding properties than conductive epoxy is provided. As the lowermost layer, a Cu layer having excellent adhesion to the ferrite disk and the dielectric material film embedded therein is used. In addition, a nonmagnetic conductive material film is adopted between the uppermost Au film and the lowermost Cu layer as an intermediate layer for joining the two layers. By forming the circuit and the ground pad from such a three-layered conductive thin film, variations in electrical characteristics such as frequency characteristics can be suppressed.

Hereinafter, an embodiment of a composite substrate type circuit according to the present invention will be described with reference to the drawings.

The composite substrate type circulator according to the present invention can employ any structure as the element structure itself except for the structure of the conductive thin film constituting the circulator circuit and the ground pad. Therefore, the basic configuration of a composite substrate type circulator according to an embodiment of the present invention will be described by taking a composite substrate type circular circuit having the structure shown in FIG. 1 as an example.

FIG. 1 is a plan view showing an example of the structure of a circulator circuit in a composite board type circulator according to one embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line AA of FIG. 1, and FIG. 3 is a cross-sectional view taken along line BB of FIG.

As shown in FIGS. 2 and 3, the composite substrate type circuit according to the present embodiment includes a first dielectric substrate 6 and a ground layer formed on one surface of the first dielectric substrate 6. Metal film 5, a cylindrical ferrite disk 10 fixed on the metal film 5 via a conductive adhesive layer 11, and a filler disk 10 embedded on the metal film 5. A second dielectric material film 4 provided around the disk 10 and And a circuit 13 made of a conductive thin film formed on the disk 10 and the second dielectric material film 4.

When viewed from above, this circuit 13 made of a conductive thin film has a circular conductor portion 9 and three microphone ports extending in three equal circumferential angles from the circular conductor portion 9 as shown in FIG. A strip line 7 and ground pads 8 disposed on both sides of the input / output end of each microstrip line 7.

As shown in FIG. 2, the ground pad 8 is electrically connected to the metal film 5 on the lower surface via a via 12 formed in the thickness direction inside the second dielectric material film 4.

As shown in FIG. 1, the composite substrate type circuit according to the present embodiment uses a first dielectric substrate 6 as a base substrate for holding the entire composite substrate. The first dielectric substrate 6 is, of course, formed of a non-magnetic and non-conductive material. As the first dielectric substrate 6, for example, it is preferable to use a substrate made of a material having high insulating properties and high mechanical strength, such as an alumina substrate or a glass ceramic substrate.

The operating region of the composite substrate type circulator according to the present embodiment is provided above the first dielectric substrate 6.

First, the metal film 5 is formed on one surface (upper surface) of the first dielectric substrate 6. When an alumina substrate or a glass ceramic substrate is used as the first dielectric substrate 6, the metal film 5 has excellent adhesion to the first dielectric substrate 6 and has high conductivity. Preferably, a membrane is used.

The metal film 5 is formed on the entire surface of one surface of the first dielectric substrate 6 and functions as a ground layer for the entire circuit. Further, the Cu film is excellent in adhesion to the second dielectric film layer 4 disposed thereon, and is preferable as a ground layer for the solar cell.

As shown in Fig. 1, a composite substrate-type circuit using a gyromagnetic phenomenon caused by the interaction between a bias magnetic field generated by a circular magnetic body and a magnetic field induced by a high-frequency current flowing through the circuit. In the evening, a circular magnetic material is used on the metal film 5 serving as the ground layer, and in this embodiment, the X-light disc 10 uses a conductive adhesive 11. And sticks.

Further, the second dielectric material film 4 is integrally formed on the metal film 5 so as to embed the light disk 10. The second dielectric material film 4 may be formed after the light disk 10 is fixed so as to embed the light disk 10 fixed by using the conductive adhesive 11. Conversely, a hole for inserting the bright disk 10 is formed in the second dielectric material film, and then the bright disk 10 is inserted into the hole, and the bright disk 10 is connected to the metal film. 5 may be fixed on the top.

As the dielectric material used for the second dielectric material film 4, it is preferable to select a material having a small dielectric loss in the operating frequency range over a short period of time.

When the method of forming the second dielectric material film 4 in which the ferrite disc 10 is fixed on the metal film 5 and then embedding the ferrite disc 10 is adopted, a resin with low loss is used. be able to. When this resin is used to form the second dielectric material film 4, there is essentially no gap between the fly disk 10 and the second dielectric material film 4, which is more preferable. It will be. That is, it is possible to prevent erosion of the metal film 5 due to a chemical or the like entering from the gap.

Also, in order to increase the operating frequency range to several tens of GHz, etc., when reducing the element dimensions and the diameter and thickness of the ferrite disk 10, the resin The method of forming the second dielectric material film 4 by embedding is more advantageous in terms of work efficiency and accuracy.

The magnetic material used for the filler disk 10 is appropriately selected in consideration of the strength of the generated bias magnetic field. When the magnetic material is a soft magnetic material having a small coercive force, a permanent magnet material is arranged in an external magnetic field, specifically, in the sky, and the soft magnetic material is magnetized.

On the other hand, when a magnetic material having a large coercive force is used as the magnetic material used for the X-light disc 10, since the remanent magnetization is maintained after being magnetized once, it is similar to the case where a soft magnetic material is used. The use of permanent magnets becomes unnecessary.

In the composite substrate type circulator according to the present embodiment, a magnetic material is not used for both the conductive thin film provided on the upper surface for the circulator circuit and the metal film 5 provided as the ground layer on the lower surface. , Ferrite disk 10 Magnetic material As the material, any of a soft magnetic material having a small magnetization coercive force and a magnetic material having a large magnetization coercive force can be used.

When a magnetic material having a large magnetization coercive force is used as the magnetic material forming the ferrite disk 10, it becomes more suitable when mounted in an integrated high-frequency circuit.

The upper surfaces of the light disk 10 and the second dielectric material film 4 are parallel to the upper surface of the metal film 5 serving as the ground layer on the lower surface, in fact, the upper surface of the first dielectric substrate 6 of the underlying substrate. Polishing is performed as necessary so that Ultimately, the upper surfaces of the ferrite disk 10 and the second dielectric material film 4 are smooth with the upper surface of the ferrite disk 10 and the surface of the second dielectric material film 4 exposed in the same horizontal plane. It has a simple planar shape.

At this time, the thickness of the second dielectric material film 4 is set so as to suppress the loss of the high-frequency current propagating through the microstrip line line 7 of the circulator circuit according to the operating frequency range of the circuit. It is preferable to select an optimal one.

At this stage, vias 12 that penetrate the second dielectric material film 4 and establish electrical continuity between the metal film 5 serving as the ground layer on the lower surface and the ground pad 8 provided on the upper surface are formed at predetermined positions. I do.

Next, a heterometallic three-layer structure forming a circuit 13 is formed on the fly disk 10 and the second dielectric material film 4. This three-layer structure is composed of an uppermost Au film, a lowermost Cu layer, and a nonmagnetic conductive material film 1 which is formed as an intermediate layer between these two layers and joins both layers. I'm sorry.

Like the Cu layer suitable for the metal layer 5 as the ground layer, the lower Cu layer 3 is preferable in terms of adhesion between the disk 10 and the second dielectric material film 4. Selected as

The uppermost Au layer 2 is the most suitable electrode material for Au wire bonding, and is selected for its high conductivity.

The nonmagnetic conductive material film 1 is provided mainly for the purpose of bonding the lower Cu layer 3 and the uppermost Au layer 2 to each other. Also, when the uppermost Au layer 2 is formed by plating, it functions as a plating underlayer and protects the Cu layer 3 so that the lower Cu layer 3 is not damaged during plating. It also has

Therefore, the material used for the non-magnetic conductive material film 1 is a non-magnetic conductive material, Furthermore, it is preferable to select a material that sufficiently satisfies the function of the junction between the lower Cu layer 3 and the uppermost Au layer 2 and the function of the plating underlayer.

Suitable nonmagnetic conductive materials that meet this condition include Ni-P and the like.

In addition, when Au wire is bonded to the uppermost Au layer 2, the bonding performance is comparable to that of the magnetic Ni film conventionally used for the intermediate layer. Alternatively, it is preferable to select a better material.

For example, a material having a Vickers hardness higher than that of the magnetic Ni film is more suitable as the nonmagnetic conductive material film 1, and Ni-P is one example thereof. Specifically, the Vickers hardness of the non-magnetic Ni—P film (50 OHv or more) is larger than the Pickers hardness of the magnetic Ni plating film (about 10 OHv). Therefore, comparing the bonding properties of the Au plating films 2 formed on those films, the nonmagnetic Ni-P film is better than the magnetic Ni plating film. Assuming that the bonding property of the Au layer 2 formed on the non-magnetic Ni—P film and the bonding property of the Au layer 2 formed on the magnetic Ni film are comparable, the non-magnetic N i The required film thickness of the P film can be much smaller than the required film thickness of the magnetic Ni plating film.

The thickness of the lower Cu layer 3 may be within a range necessary for achieving close contact with the flat disk 10 and the second dielectric material film 4, and need not be unnecessarily thick. Therefore, it is preferable to select, for example, a range of 2 m to 7 m, particularly a range of 3 m to 5 rn. With such a thickness range, when producing the nonmagnetic conductive material film 1 by the plating method, the Cu layer 3 sufficiently functions as a plating base film.

As a method for forming the Cu layer 3, any method may be used as long as the adhesion to the fly disk 10 and the second dielectric material film 4 is satisfied. For example, in order to form a dense Cu layer 3, it is preferable to use a sputtering method or a plating method.

The film thickness of the non-magnetic conductive material film 1 of the intermediate layer is, for example, considering the pick hardness of the non-magnetic conductive material forming the non-magnetic conductive material film 1 in order to achieve a desired bonding property. Then, the lower limit is determined by itself.

On the other hand, the non-magnetic conductive material film 1 in the present embodiment causes an extra magnetic field to be generated. In principle, there is no upper limit on the film thickness as long as it does not become unnecessarily thick. However, the electrical conductivity of many non-magnetic conductive materials is used for the top layer

It is considerably inferior to the Au layer 2 and is preferably in a range that is not excessively thick compared to the film thickness of the Au layer 2 used as the uppermost layer.

In addition, when the non-magnetic conductive material film 1 is formed by, for example, a plating method, if the film thickness is too thin, pinholes occur more frequently. For this reason, it is preferable to set the thickness of the nonmagnetic conductive material film 1 to 0.3 m or more to avoid the problem of the occurrence of pinholes.

• Since the plating method is more suitable for forming a film having a larger thickness than other film forming methods, if the upper limit of the film thickness of the nonmagnetic conductive material film 1 is set to 5 im, workability is improved. It is also favorable in terms of surface.

Therefore, the film thickness of the nonmagnetic conductive material film 1 is preferably in the range of 0.3 m or more and 5 μm or less, more preferably 1 m when using a Ni—P film. Set it within the range of 3 m or less.

However, as will be shown later in the verification example, in the composite substrate type circulating device according to the present embodiment, the thickness of the non-magnetic conductive material film 1 of the intermediate layer depends on the electric characteristics such as the frequency characteristics of the circuit. Has essentially no effect on properties. For this reason, the range of the thickness of the nonmagnetic conductive material film 1 may be set to a range that is preferable mainly due to bonding characteristics and restrictions on fabrication.

This nonmagnetic conductive material film 1 is formed according to the circuit pattern. Therefore, as a method for forming the nonmagnetic conductive material film 1, it is preferable to select a method suitable for pattern formation according to the nonmagnetic conductive material forming the nonmagnetic conductive material film 1. When the total thickness of the nonmagnetic conductive material film 1 and the uppermost Au layer 2 exceeds 1 m, and both layers are formed in the same shape, for example, a mask may be used. It is preferable to use and form by plating.

The uppermost Au layer 2 mainly controls the resistance of the circular circuit, for example, the microstrip-line line 7. For this reason, the appropriate thickness of the Au layer 2 varies depending on the operating frequency region and the width of the microstrip line line 7, but is generally preferably in the range of 0.5 to 5, .7 ^ m ~ 2 The range of m is more preferred.

Since the bonding by the Au wire is performed on the Au layer 2, the lower limit of the film thickness of the Au layer 2 is determined according to the diameter of the Au wire used for bonding. For this reason, the thickness range of the Au layer 2 is selected so as to satisfy this lower limit. Normally, the thickness of the uppermost Au layer 2 is set to at least about 1 m. When the Au layer 2 and the nonmagnetic conductive material film 1 are formed in the same shape, it is preferable to form the Au layer 2 and the nonmagnetic conductive material film 1 by, for example, a plating method using a mask.

The conductive thin film used in the circuit 13 has a three-layer structure in which a Cu film 3, a nonmagnetic conductive material film 1, and an Au film 2 are formed in this order. In this three-layer structure, as shown in FIG. 4, the three layers 3, 1, and 2 can be formed in the same shape. When the three layers 3, 1, and 2 are formed in the same shape as described above, the nonmagnetic conductive material film 1 and the uppermost Au layer 2 are the same, with the lower Cu film 3 as a plating underlayer. It is preferable to sequentially form by a plating method using a mask.

Further, as shown in FIG. 5, the three-layer laminated structure forming the circuit 13 is composed of a nonmagnetic conductive material film 1 covering the upper surface and side surfaces of the lower Cu film 3 and a top layer. The Au layer 2 can be formed so as to cover the upper surface and side surfaces of the nonmagnetic conductive material film 1. When the upper film covers the side surface of the lower film in this way, when the uppermost Au layer 2 is formed by plating, the erosion of the drug from the side end surface of the lowermost Cu film 3 is prevented. There is an advantage that can be.

4 and 5 each show a cross section taken along line CC of FIG. In the composite substrate type circulator according to this embodiment, the conductive thin film forming the circuit 13 formed on the upper surface is formed of the Cu film 3, the non-magnetic conductive material film 1, and the Au film 2. Since it has a three-layer laminated structure formed in order, there is no magnetic layer in the circuit plane. The magnetic permeability of this conductive thin film is almost 1, and in the region where microwave and millimeter wave currents flow in the composite circuit type circuit, a magnetic material for generating a bias magnetic field, that is, a ferrite disk 1 Nothing generates a magnetic field other than 0, and the magnetic field distribution generated at the resonance frequency specific to the circulator circuit 13 is not disturbed. As a result, in a circulator circuit having the same shape in which only the thickness of the nonmagnetic conductive material film 1 is different, the operating center frequency is essentially a conductive value. The same value is obtained regardless of the thickness of the material film 1.

A conventional composite substrate-type solar cell using a Ni film, which is a magnetic metal that has excellent adhesion between the Cu film and Au film as the intermediate layer and is suitable as a plating underlayer for the Au film. In a short time, the Ni film is magnetized, causing a disturbance in the magnetic field distribution. In addition, the degree of the magnetization varies, and as a result, the operating center of the obtained composite substrate type solar cell is obtained. The frequency also varied. According to the composite substrate type semiconductor device according to the present embodiment, as an intermediate layer between the Cu film 3 and the Au film 2, a nonmagnetic conductive material film different from the magnetic metal Ni film is used. Therefore, there is essentially no variation in the operating center frequency of the composite substrate type circuit described above.

In addition, even if the degree of magnetization of the magnetic Ni film is the same, if the width and thickness of the magnetic Ni film of each composite substrate type circulator are different, the operating center of each composite substrate type circulator is different. It causes frequency shift and variation. On the other hand, in the composite substrate type circulator according to the present embodiment, even if the width and thickness of the nonmagnetic conductive material film 1 are different, the change and the variation of the operating center frequency of the composite substrate type circulator are different. It is not a factor.

Furthermore, if the operating center frequency of the composite board type circulator shifts or varies, the frequency of the high-frequency signal actually input to the composite board type circulator and the operating center frequency of the composite board type circulator itself are changed. -It will not be. As a result, at the frequency of the high-frequency signal input to the composite substrate type circulator, the isolation decreases and the loss also increases. For this reason, the frequency characteristics may not be sufficiently high for practical use. However, in the composite substrate type circulator according to the present embodiment, the secondary electric characteristics accompanying such frequency characteristics The decline has been essentially avoided.

Since the composite substrate type circuit according to the present embodiment has a configuration of a drop-in type circulator, three microstrips which serve as input and output terminals of the circulator circuit 13 are used. When a terminating resistor is connected to one of them, the composite substrate type circulator according to the present embodiment can be used as an isolator. This isolator has the same structure as the composite substrate type circulator according to the present embodiment. Therefore, the frequency characteristics, the bonding properties, and the like are essentially the same as those of the composite substrate type circulator according to the present embodiment.

Hereinafter, a specific example will be described, and the composite substrate type circuit according to the present embodiment will be described more specifically. These specific examples are examples of the best embodiment of the composite substrate type circuit according to the present invention, but the present invention is not limited to these specific examples.

(Specific examples 1-5)

The composite substrate type circulator according to the specific example 1-5 has a structure as shown in FIG.

As the first dielectric substrate 6, an alumina substrate having a thickness of 0.8 mm was used. On this alumina substrate 6, a Cu layer was formed on one surface as a metal film layer 5 serving as a ground layer. A disk-shaped ferrite 10 is fixed on the Cu layer 5 using a conductive adhesive 11. A non-conductive resin is applied to the same thickness as the ferrite 10 so as to surround the periphery of the disk-shaped light 10 and to cover the surface of the metal film layer 5, and then cure the non-conductive resin. Let me know. After curing, the non-conductive resin was polished from the upper surface, and polished until the upper surface of the light 10 and the surface of the non-conductive resin became flat and the same surface.

The thickness of the resin layer after polishing was a predetermined thickness. The resin layer thus obtained functions as the second dielectric material film 4.

As a resin constituting the second dielectric material film 4, a material having a low dielectric loss near a target operating frequency of 76 GHz was selected.

In addition, the resin layer, that is, the second dielectric material film 4 has a ground layer Cu layer 5 corresponding to the arrangement position of the ground pad 8 associated with the three microstrip lines 7 shown in FIG. Then, a via hole reaching the ground layer 5 was formed, and a via 12 electrically connecting the ground layer 5 and the ground pad 8 was formed in the via hole.

Next, a photoresist film is first formed on the polished surface of the ferrite 10 and the second dielectric material film 4 in order to fabricate a pattern of the circuit 13 and then the circuit pattern is formed. The photoresist film was removed to form a mask. Using this plating mask, a lower Cu film 3 having a thickness of 4 m was formed by plating. Then, on the Cu film 3, non-magnetic Ni—P Film 1 was formed by plating according to the circuit pattern.

In specific examples 115, as shown in Table 1, the thickness of the nonmagnetic Ni-P film 1 is selected in the range of 0.3 to 5.0 i / m. The uppermost Au film 2 was also formed by plating, and the thickness was set to 1.

Therefore, in the composite substrate type circuit of Example 1-5, the pattern of the circuit 13 and the ground pad 8 are formed from the Cu film 3, the nonmagnetic Ni-P film 1 and the Au film 2. It has a three-layer structure of dissimilar metals, and its cross-sectional structure is a simple laminated film as shown in Fig. 2.

The ferrite 10 used has a magnetic property such that the coercive force i He is 3.8 kO e (kilo-elsted) and the index Br of the residual magnetic flux density is 3600 Gauss (gauss).

On the other hand, a composite substrate-type circulator of Comparative Examples 1-5 was manufactured in order to compare with the composite-substrate-type circuit of Specific Examples 15-5. In the composite substrate-type circuit of Comparative Example 1-5, instead of the non-magnetic Ni-P film 1, a magnetic Ni film made of the same material was used. Except for the membrane, it has the same structure as the composite substrate type circulator of Example 15.

Also in Comparative Examples 1 to 5, as shown in Table 1, the thickness of the magnetic Ni film was selected in the range of 0.3 m to 5.0 m.

Specific examples 11-5 The composite substrate type circuit circulator and the comparative example 1 _5 The composite substrate type circuit converter, the main electrical characteristics, such as the operating center frequency, the isolation between the ports during the circuit operation, and the input The loss between the port and the output port was measured. At the time of these measurements, a plurality of each of the specific examples and comparative examples were produced, and the variability in the same group was evaluated.

In addition, the pattern of the circulator circuit 13 and the bonding property to the ground pad 8 were also evaluated.

The bondability of the Au wire-bonding was judged as good or bad when the Au wire was pulled and a break occurred at the bonding location when the wire was pulled.

Table 1 shows the composite substrate type circuit (element number 1 _5) and the ratio of Example 1-5. The evaluation results of the composite substrate type oscillator (element numbers 6-10) of Comparative Examples 15 are shown.

(table 1)

As shown in Table 1, the circuit 13 and the ground pad 8 are formed in a heterometallic three-layer structure composed of a Cu film 3, a nonmagnetic Ni-P film 1 and an Au film 2. In the 1-5 complex substrate type circulator (element number 1-5), the operating center frequency is within the design value of 76 GHz, and the variation is within 0.3%.

On the other hand, the composite of Comparative Examples 1-5 in which the solar cell circuit 13 and the ground pad 8 are formed in a three-layer structure of dissimilar metals consisting of a Cu film, a magnetic Ni film and an Au film In the circuit type circuit (element number 6-10), the operating center frequency is 3.9% even though the average value is the same as the designed value of 76 GHz, even if the variation is small.

Also, in the composite board type circulator (element number 15) of Example 15 (5), the isolation at the measurement frequency of 76 GHz is approximately 45 dB, and the maximum variation is only 12%. In the composite circuit type circulator (element number 6-10), the isolation at a measurement frequency of 76 GHz is only about 23 dB, and even if the dispersion is small, it is 19%. Furthermore, in the composite substrate type sacrificial device of Example 15 (element number 115), the loss at a measurement frequency of 76 GHz is approximately 2. OdB or less, and the maximum variation is 10%. However, in the composite board type circuit (Comparative Example 1-5), the loss at the measurement frequency of 76 GHz was about 3.5 dB, and the variation was about 13%. Has become.

From the results of the evaluation of the electrical characteristics, the non-magnetic Ni—P film 1 was used in the composite substrate type circuit collector (element number 115) of Example 15 and the circuit circuit 13 Since the ground pad 8 does not include a magnetic material that generates a magnetic field, the target operating center frequency can be obtained with good reproducibility without causing a large change (fluctuation) in the operating center frequency. .

On the other hand, in the composite substrate type circuit of Comparative Example 1-5 (element number 6-10), a magnetic Ni film is used in place of the nonmagnetic Ni_P film 1, and this magnetic material is used. It can be seen that a large shift (variation) in the operating center frequency is caused by the effect of the moving magnetic field. Variations in the magnetic field strength occur due to variations in the thickness of the magnetic Ni film, and this is also considered to be a factor that increases the variation in the center frequency of the magnetic operation.

In the composite substrate type circulator (element numbers 1-5) of Example 15 using the non-magnetic Ni_P film 1, the operating center frequency only slightly changes from the target value of 76 GHz. As a result, the isolation at the measurement frequency of 76 GHz is sufficiently large, and the dispersion is small.

In contrast, the composite substrate-type circulator of Comparative Example 1-5 using the magnetic Ni film In the evening (element numbers 6 to 10), the operating center frequency often shifted significantly from the target value of 76 GHz, and as a result, the operating center frequency of each composite board type oscillator was At a significantly different measurement frequency of 76 GHz, the isolation is smaller and, of course, the variation is larger.

Example 11 Loss at the measurement frequency of 76 GHz of the composite board type circulator (element numbers 1 to 5) of 15 and the measurement frequency of 76 GHz of the composite board type circulator (element numbers 6 to 10) of Comparative Example 1-5 The difference from the loss in the above is also due to the difference in the variation of the operating center frequency. In the composite substrate type circuit controller (element Nos. 6-10) of Comparative Example 1-5, in which the deviation from the resonance condition was large, the loss at the measurement frequency of 76 GHz increased, and the isolation was not large. The accompanying leakage is also a factor that increases the apparent loss.

The above-mentioned frequency characteristics between the composite substrate-type circuit elements of the specific example 1-5 using the non-magnetic Ni-P film 1 (element numbers 115) are also obtained by the non-magnetic Ni-P film 1. It does not depend on thickness, but is virtually the same. This is because the nonmagnetic Ni-P film 1 is used in the composite substrate type circuit element (element number 1-5) in Example 1-5, so the bias magnetic field that determines the operating center frequency is Is only the magnetic field generated by the ferrite 10, and as with the Cu film 3 and the Au film 2, the non-magnetic Ni-P film 1 is a result of not being an extra magnetic field source that disturbs the bias magnetic field. It should be noted that Ni-P has a higher electrical resistance than Ni, but it is not enough to significantly change the pattern of the circuit 13 such as the line resistance of the microstrip line 7, for example. Although it has a small effect on the loss, it has no effect on the frequency characteristics such as the operating center frequency.

In addition to the electric characteristics such as the frequency characteristics described above, all of the composite substrate type circuit elements (element numbers 115) of Example 1-15 using the nonmagnetic Ni—P film 1 are favorable. It shows excellent bonding properties.

On the other hand, in the composite substrate type circulator (element numbers 6-10) of Comparative Examples 1-5, the bondability was poor when the magnetic Ni film thickness was 0.5 μm and 0.3 μm. Has become. That is, the bonding property is poor in the Ni plating film. Even with such a small film thickness, the Ni-P plating film still has sufficient strength. This difference is considered to be due to the remarkable difference in Vickers hardness between the two. That is, the above difference is a result of the fact that the Vickers hardness of the Ni-P plating film 1 (500 Hv or more) is larger than the Vickers hardness of the Ni plating film (about Ι Ο Η ν). However, if the thickness of the plating film is too small, the frequency of occurrence of pinholes increases, which is not preferable in practical use.

Thus, Ni-P is also effective for improving the bonding property, and it is understood that Ni-P is one of the more preferable nonmagnetic conductive materials. When the Ni-P film is used as the nonmagnetic conductive material film 1 of the intermediate layer, the lower limit of the film thickness should be set to 0.3 m to avoid pinholes when using the plating method. Is preferred.

The line resistance of the microstrip line 7 is governed by the electrical conductivity of the uppermost Au film 2, and the contribution of the nonmagnetic Ni—P film 1 in the intermediate layer is slight, but Ni_ Since P itself has a relatively high resistivity as a conductive material, it is not preferable to make the film too thick. Therefore, it is preferable to set an upper limit of the thickness of the non-magnetic Ni—P film 1, and select an upper limit of, for example, 5 μm. Furthermore, considering that the nonmagnetic Ni-P film 1 is formed by plating, if the upper limit of the thickness of the nonmagnetic Ni-P film 1 is selected to be 5 m, it is preferable in terms of workability. Become.

As shown in the above specific example 115, the circulator circuit pattern 13 on the upper surface and the ground pad 8 are, for example, a Cu film 3 in the lower layer and a Ni 1 film in the non-magnetic conductive material film in the intermediate layer. When composed of a three-layer structure of dissimilar metals using a P film 1 and an Au film 2 as the uppermost layer, variations in the operating center frequency can be reduced and composites with high reproducibility of electrical characteristics such as frequency characteristics can be achieved. A substrate-type solar cell can be manufactured. The improvement of the frequency characteristics does not depend on the thickness of the nonmagnetic conductive material film 1 and does not depend on the structure of the composite substrate type circulator.

In addition, since the effect of improving the electrical characteristics described above does not essentially depend on the thickness of the nonmagnetic conductive material film 1, the nonmagnetic conductive material film depends on the hardness of the nonmagnetic conductive material used. The film thickness of 1 can be selected to a film thickness suitable for obtaining a desired bonding property.

Thus, according to the composite substrate type oscillator according to the present embodiment, the bond At the same time, electrical characteristics such as frequency characteristics are improved. In particular, when a high-hardness non-magnetic conductive material, such as the Ni-P film shown in the specific examples, is used, the above-described improvement in bonding properties and improvement in electrical characteristics such as frequency characteristics can be more easily achieved. be able to. Industrial applicability

In the composite substrate type circulator according to the present invention, the circulator circuit pattern 13 and the ground pad 8 are formed of a heterometallic three-layer structure using a nonmagnetic conductive material film as an intermediate layer. As a result, compared with a conventional composite substrate type circulator using a magnetic metal film as the intermediate layer, it is possible to significantly reduce the variation of the operating center frequency, and at the same time, increase the magnitude of the isolation and reduce the loss. And variations thereof can be reduced. That is, the composite substrate type circulator according to the present invention has much better electrical characteristics than the conventional composite substrate type circulator.

The improvement of electrical characteristics such as frequency characteristics due to the adoption of a dissimilar metal three-layer structure using a nonmagnetic conductive material film for the intermediate layer can be achieved irrespective of the structure of the composite substrate type circulator. It is. That is, such improvements can be made in any of the composite board type circulators having various element structures. In addition, the effect of improving the frequency characteristics described above does not essentially depend on the thickness of the nonmagnetic conductive material film of the intermediate layer. For this reason, it is possible to freely select a film thickness suitable for obtaining a desired bonding property according to the hardness of the nonmagnetic conductive material to be used, and to improve the bonding property. it can.

Claims

The scope of the claims

1. a first dielectric substrate;

A metal film layer formed on one surface of the first dielectric substrate,

An X-light disc fixed on the metal film layer via a conductive adhesive layer, and provided around the light disc so as to embed the light disc on the metal film layer. A second dielectric material film,

A circuit comprising a conductive thin film formed on the ferrite disk and the second dielectric material film;

It is a composite substrate type circulator consisting of

The conductive thin film,

A first conductive film formed on the upper surface of the X light disk and the second dielectric material film,

A non-magnetic conductive material film formed on the first conductive film,

A second conductive film formed on the non-magnetic conductive material film,

A composite substrate type circulator, having a three-layer laminated structure consisting of:

2. The composite substrate type circuit according to claim 1, wherein the first conductive film is made of copper (Cu).

3. The composite substrate type circulator according to claim 1, wherein the second conductive film is made of gold (Au).

4. The circulator according to claim 1, wherein the nonmagnetic conductive material film is a Ni—P film.

5. The composite substrate type circular according to any one of claims 1 to 3, wherein the nonmagnetic conductive material film has a thickness of 0.3 or more and 5 m or less. evening.

6. The circulator according to claim 5, wherein a thickness of the nonmagnetic conductive material film is 1 m or more and 3 μm or less.

7. The circuit board according to claim 1, wherein the nonmagnetic conductive material film is a film formed by plating.

8. The composite substrate type circulator according to any one of claims 1 to 3, wherein the second conductive film is a film formed by plating.

9. The composite substrate type circulator according to any one of claims 1 to 3, wherein the first conductive film is a film formed by plating.

10. The composite substrate type circuit according to any one of claims 1 to 3, wherein the second dielectric material film is a non-conductive resin film.

11. The composite substrate type circulator according to claim 1, wherein the first dielectric substrate is an alumina substrate or a glass ceramic substrate.

1 2. The composite substrate type circular circuit according to claim 1, wherein the metal layer film is a copper (Cu) film.

1 3. The nonmagnetic conductive material film according to any one of claims 1 to 3, wherein the nonmagnetic conductive material film is a film made of a material having a Vickers hardness greater than magnetic Ni. A composite board type circuit.

1 4. The first conductive film, the non-magnetic conductive material film, and the second conductive film The composite substrate type circulator according to any one of claims 1 to 3, wherein the circulator has the same shape as that of the circulator.

1 5. The non-magnetic conductive material film is formed so as to cover an upper surface and side surfaces of the first conductive film, and the second conductive film is an upper surface of the non-magnetic conductive material film. The composite substrate type circulator according to any one of claims 1 to 3, wherein the circulator is formed so as to cover the side surface.

1 6. The composite according to any one of claims 1 to 3, wherein the first conductive film has a thickness in the range of 2 to 7 m. Substrate type

-Jyureta.

17. The second conductive film according to any one of claims 1 to 3, wherein the second conductive film has a thickness in a range of 0.5 m to 5 m. Composite board type circulator.

1 8. comprising the composite substrate type circulator according to any one of claims 1 to 17,

An isolator in which a terminating resistor is connected to one of three microstrip lines serving as an input terminal and an output terminal of the circuit made of the conductive thin film.