WO2001086701A3 - Method of high selectivity sac etching - Google Patents

Method of high selectivity sac etching Download PDF

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Publication number
WO2001086701A3
WO2001086701A3 PCT/JP2001/003897 JP0103897W WO0186701A3 WO 2001086701 A3 WO2001086701 A3 WO 2001086701A3 JP 0103897 W JP0103897 W JP 0103897W WO 0186701 A3 WO0186701 A3 WO 0186701A3
Authority
WO
WIPO (PCT)
Prior art keywords
etching
sac
perfluorocarbon
wafer
carbon monoxide
Prior art date
Application number
PCT/JP2001/003897
Other languages
French (fr)
Other versions
WO2001086701A2 (en
Inventor
Kazuo Tsuchiya
Original Assignee
Tokyo Electron Ltd
Kazuo Tsuchiya
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Kazuo Tsuchiya filed Critical Tokyo Electron Ltd
Priority to EP01930027A priority Critical patent/EP1281193A2/en
Priority to US10/257,990 priority patent/US7030029B2/en
Priority to JP2001582823A priority patent/JP4852213B2/en
Publication of WO2001086701A2 publication Critical patent/WO2001086701A2/en
Publication of WO2001086701A3 publication Critical patent/WO2001086701A3/en
Priority to US11/203,211 priority patent/US7329610B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.
PCT/JP2001/003897 2000-05-12 2001-05-10 Method of high selectivity sac etching WO2001086701A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP01930027A EP1281193A2 (en) 2000-05-12 2001-05-10 Method of high selectivity sac etching
US10/257,990 US7030029B2 (en) 2000-05-12 2001-05-10 Method of high selectivity SAC etching
JP2001582823A JP4852213B2 (en) 2000-05-12 2001-05-10 Method for etching highly selective SAC
US11/203,211 US7329610B2 (en) 2000-05-12 2005-08-15 Method of high selectivity SAC etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56988200A 2000-05-12 2000-05-12
US09/569,882 2000-05-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US56988200A Continuation-In-Part 2000-05-12 2000-05-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10257990 A-371-Of-International 2001-05-10
US11/203,211 Division US7329610B2 (en) 2000-05-12 2005-08-15 Method of high selectivity SAC etching

Publications (2)

Publication Number Publication Date
WO2001086701A2 WO2001086701A2 (en) 2001-11-15
WO2001086701A3 true WO2001086701A3 (en) 2002-09-06

Family

ID=24277282

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/003897 WO2001086701A2 (en) 2000-05-12 2001-05-10 Method of high selectivity sac etching

Country Status (6)

Country Link
US (2) US7030029B2 (en)
EP (1) EP1281193A2 (en)
JP (1) JP4852213B2 (en)
KR (1) KR100759602B1 (en)
TW (1) TW495877B (en)
WO (1) WO2001086701A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782632B1 (en) * 2000-12-21 2007-12-06 동경 엘렉트론 주식회사 Etching method for insulating film
KR100400033B1 (en) * 2001-02-08 2003-09-29 삼성전자주식회사 Semiconductor device having multi-interconnection structure and manufacturing method thereof
US6787475B2 (en) * 2001-09-06 2004-09-07 Zhuxu Wang Flash step preparatory to dielectric etch
US6955914B2 (en) * 2002-04-10 2005-10-18 Geneohm Sciences, Inc. Method for making a molecularly smooth surface
US6790772B2 (en) * 2002-05-09 2004-09-14 Macronix International Co., Ltd. Dual damascene processing method using silicon rich oxide layer thereof and its structure
JP2004327507A (en) * 2003-04-22 2004-11-18 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor device
US7425512B2 (en) * 2003-11-25 2008-09-16 Texas Instruments Incorporated Method for etching a substrate and a device formed using the method
WO2005076336A1 (en) * 2004-02-09 2005-08-18 Tadahiro Ohmi Semiconductor device manufacturing method and insulating film etching method
US7229931B2 (en) * 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
JP2006196663A (en) * 2005-01-13 2006-07-27 Tokyo Electron Ltd Etching method, program, recording, computer-readable recording medium, and plasma processor
US7955515B2 (en) * 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
JP4205734B2 (en) * 2006-05-25 2009-01-07 エルピーダメモリ株式会社 Manufacturing method of semiconductor device
JP2008078382A (en) * 2006-09-21 2008-04-03 Toshiba Corp Semiconductor device and its manufacturing method
JP4257357B2 (en) * 2006-09-27 2009-04-22 エルピーダメモリ株式会社 Manufacturing method of semiconductor device
JP5568209B2 (en) * 2007-03-01 2014-08-06 ピーエスフォー ルクスコ エスエイアールエル Semiconductor device manufacturing method and manufacturing apparatus
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8603363B1 (en) * 2012-06-20 2013-12-10 Praxair Technology, Inc. Compositions for extending ion source life and improving ion source performance during carbon implantation
US9064801B1 (en) 2014-01-23 2015-06-23 International Business Machines Corporation Bi-layer gate cap for self-aligned contact formation
JP2016157793A (en) 2015-02-24 2016-09-01 東京エレクトロン株式会社 Etching method
DE202015102094U1 (en) 2015-04-27 2015-05-12 Liu Kuo-Lung Multifunctional rowing machine

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726596A2 (en) * 1995-02-07 1996-08-14 Tokyo Electron Limited Plasma etching method
WO1999034419A1 (en) * 1997-12-27 1999-07-08 Tokyo Electron Limited Etching process
JPH11186229A (en) * 1997-12-18 1999-07-09 Toshiba Corp Dry etching and manufacture of semiconductor device
DE19929239A1 (en) * 1998-06-30 2000-01-05 Siemens Ag MOSFET integrated circuit manufacture lithography masking technique
JP2000036491A (en) * 1998-05-15 2000-02-02 Fujitsu Ltd Fabrication of semiconductor device
US6159862A (en) * 1997-12-27 2000-12-12 Tokyo Electron Ltd. Semiconductor processing method and system using C5 F8

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US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US5635418A (en) * 1995-03-23 1997-06-03 Micron Technology, Inc. Method of making a resistor
US6066555A (en) 1995-12-22 2000-05-23 Cypress Semiconductor Corporation Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning
US5811357A (en) 1997-03-26 1998-09-22 International Business Machines Corporation Process of etching an oxide layer
US6183655B1 (en) * 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
US6033962A (en) * 1998-07-24 2000-03-07 Vanguard International Semiconductor Corporation Method of fabricating sidewall spacers for a self-aligned contact hole
US6168989B1 (en) * 1999-05-26 2001-01-02 Taiwan Semiconductor Manufacturing Company Process for making new and improved crown-shaped capacitors on dynamic random access memory cells
US6221772B1 (en) * 1999-07-14 2001-04-24 United Microelectronics Corp. Method of cleaning the polymer from within holes on a semiconductor wafer
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US6803318B1 (en) * 2000-09-14 2004-10-12 Cypress Semiconductor Corp. Method of forming self aligned contacts

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726596A2 (en) * 1995-02-07 1996-08-14 Tokyo Electron Limited Plasma etching method
JPH11186229A (en) * 1997-12-18 1999-07-09 Toshiba Corp Dry etching and manufacture of semiconductor device
WO1999034419A1 (en) * 1997-12-27 1999-07-08 Tokyo Electron Limited Etching process
EP1041613A1 (en) * 1997-12-27 2000-10-04 Tokyo Electron Limited Etching process
US6159862A (en) * 1997-12-27 2000-12-12 Tokyo Electron Ltd. Semiconductor processing method and system using C5 F8
JP2000036491A (en) * 1998-05-15 2000-02-02 Fujitsu Ltd Fabrication of semiconductor device
DE19929239A1 (en) * 1998-06-30 2000-01-05 Siemens Ag MOSFET integrated circuit manufacture lithography masking technique

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05 14 September 2000 (2000-09-14) *
See also references of EP1281193A2 *

Also Published As

Publication number Publication date
JP4852213B2 (en) 2012-01-11
US7030029B2 (en) 2006-04-18
WO2001086701A2 (en) 2001-11-15
US20030127422A1 (en) 2003-07-10
US20050263487A1 (en) 2005-12-01
TW495877B (en) 2002-07-21
EP1281193A2 (en) 2003-02-05
KR100759602B1 (en) 2007-09-17
JP2003533042A (en) 2003-11-05
US7329610B2 (en) 2008-02-12
KR20020094036A (en) 2002-12-16

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