WO2002029858A3 - Deep trench etching method to reduce/eliminate formation of black silicon - Google Patents

Deep trench etching method to reduce/eliminate formation of black silicon Download PDF

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Publication number
WO2002029858A3
WO2002029858A3 PCT/US2001/027000 US0127000W WO0229858A3 WO 2002029858 A3 WO2002029858 A3 WO 2002029858A3 US 0127000 W US0127000 W US 0127000W WO 0229858 A3 WO0229858 A3 WO 0229858A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
plasma
etch
reduce
deep trench
Prior art date
Application number
PCT/US2001/027000
Other languages
French (fr)
Other versions
WO2002029858A2 (en
Inventor
Rajiv M Ranade
Gangadhara S Mathad
Original Assignee
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp filed Critical Infineon Technologies Corp
Publication of WO2002029858A2 publication Critical patent/WO2002029858A2/en
Publication of WO2002029858A3 publication Critical patent/WO2002029858A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

In a method of etching a wafer to form a DT (deep trench) in a plasma reactor, wherein the wafer temperature is greater than the cathode temperature, the improvement of conducting etching to reduce or eliminate 'black silicon', comprising:a) providing a plasma etch reactor comprising walls defining an etch chamber; b) providing a plasma source chamber remote from and in communication with the etch chamber, and a wafer chuck or pedestal disposed in the etch chamber to seat a wafer; c) forming a plasma within the plasma source chamber and providing the plasma to the etch chamber; d) supplying RF energy to etch the wafer to a point where the wafer temperature is greater than the cathode temperature; and e) increasing the flow rate of fluorine species near the end of the DT process to provide the isotropic component needed to widen the CD.
PCT/US2001/027000 2000-09-29 2001-08-30 Deep trench etching method to reduce/eliminate formation of black silicon WO2002029858A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67543300A 2000-09-29 2000-09-29
US09/675,433 2000-09-29

Publications (2)

Publication Number Publication Date
WO2002029858A2 WO2002029858A2 (en) 2002-04-11
WO2002029858A3 true WO2002029858A3 (en) 2003-02-13

Family

ID=24710467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/027000 WO2002029858A2 (en) 2000-09-29 2001-08-30 Deep trench etching method to reduce/eliminate formation of black silicon

Country Status (1)

Country Link
WO (1) WO2002029858A2 (en)

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US7399851B2 (en) 2002-07-25 2008-07-15 Dana Farber Cancer Institute, Inc. Composition and method for imaging cells
WO2005082415A2 (en) 2004-02-25 2005-09-09 Dana Farber Cancer Institute, Inc. Inhibitors of insulin-like growth factor receptor-1 for inhibiting tumor cell growth
US7968762B2 (en) 2004-07-13 2011-06-28 Van Andel Research Institute Immune-compromised transgenic mice expressing human hepatocyte growth factor (hHGF)
US20080199475A1 (en) 2006-11-27 2008-08-21 Patrys Limited Novel glycosylated peptide target in neoplastic cells
AU2008317495B2 (en) 2007-08-02 2013-08-01 Novimmune S.A. Anti-RANTES antibodies and methods of use thereof
US9289475B2 (en) 2008-11-06 2016-03-22 The Johns Hopkins University Treatment of chronic inflammatory respiratory disorders
EP2258858A1 (en) 2009-06-05 2010-12-08 Universitätsklinikum Freiburg Transgenic LSD1 animal model for cancer
WO2011071916A2 (en) 2009-12-07 2011-06-16 The Johns Hopkins University Sr-bi as a predictor of human female infertility and responsiveness to treatment
CR20180589A (en) 2016-05-13 2019-02-27 4D Molecular Therapeutics Inc VARIANT CAPSULES OF ADENOASOCIATED VIRUSES AND METHODS OF USE OF THESE
CR20200165A (en) 2017-09-20 2020-06-05 4D Molecular Therapeutics Inc Adeno-associated virus variant capsids and methods of use thereof
CN111770999A (en) 2017-11-27 2020-10-13 4D分子治疗有限公司 Adeno-associated virus variant capsids and use for inhibiting angiogenesis
JP2024519888A (en) 2021-05-28 2024-05-21 上海瑞宏迪医薬有限公司 Recombinant adeno-associated virus with capsid mutation and its application

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996008036A1 (en) * 1994-09-02 1996-03-14 Stichting Voor De Technische Wetenschappen Process for producing micromechanical structures by means of reactive ion etching
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
WO1996008036A1 (en) * 1994-09-02 1996-03-14 Stichting Voor De Technische Wetenschappen Process for producing micromechanical structures by means of reactive ion etching
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JANSEN H ET AL: "The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 27, no. 1, 1 February 1995 (1995-02-01), pages 475 - 480, XP004025125, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
WO2002029858A2 (en) 2002-04-11

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