WO2001083607A1 - Compositions a base de resine epoxyde regulees par agent rheologique - Google Patents
Compositions a base de resine epoxyde regulees par agent rheologique Download PDFInfo
- Publication number
- WO2001083607A1 WO2001083607A1 PCT/US2001/011727 US0111727W WO0183607A1 WO 2001083607 A1 WO2001083607 A1 WO 2001083607A1 US 0111727 W US0111727 W US 0111727W WO 0183607 A1 WO0183607 A1 WO 0183607A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- methylimidazole
- epoxy
- amount
- composition according
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 125
- 239000004593 Epoxy Substances 0.000 title claims abstract description 47
- 238000000518 rheometry Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000004377 microelectronic Methods 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims description 49
- 230000001070 adhesive effect Effects 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 44
- 229920000647 polyepoxide Polymers 0.000 claims description 34
- 239000003822 epoxy resin Substances 0.000 claims description 33
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- -1 trialkoxysilyl isocyanurate derivatives Chemical class 0.000 claims description 16
- 239000011256 inorganic filler Substances 0.000 claims description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000007795 chemical reaction product Substances 0.000 claims description 9
- 150000002460 imidazoles Chemical class 0.000 claims description 9
- 239000011342 resin composition Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 150000008064 anhydrides Chemical class 0.000 claims description 5
- 239000000047 product Substances 0.000 claims description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 5
- 150000004756 silanes Chemical class 0.000 claims description 5
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 claims description 4
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 claims description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 3
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 2
- NOQONXWBCSGVGF-UHFFFAOYSA-N 1,2,4-triphenylimidazole Chemical compound C=1C=CC=CC=1N1C=C(C=2C=CC=CC=2)N=C1C1=CC=CC=C1 NOQONXWBCSGVGF-UHFFFAOYSA-N 0.000 claims description 2
- KKKDZZRICRFGSD-UHFFFAOYSA-N 1-benzylimidazole Chemical compound C1=CN=CN1CC1=CC=CC=C1 KKKDZZRICRFGSD-UHFFFAOYSA-N 0.000 claims description 2
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical compound C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 claims description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 2
- OPHSKKPSEMOQLM-UHFFFAOYSA-N 2-(2-phenylethenyl)-1h-imidazole Chemical compound N=1C=CNC=1C=CC1=CC=CC=C1 OPHSKKPSEMOQLM-UHFFFAOYSA-N 0.000 claims description 2
- YAXVEVGFPVWPKA-UHFFFAOYSA-N 2-[2-(4-methoxyphenyl)ethenyl]-1h-imidazole Chemical compound C1=CC(OC)=CC=C1C=CC1=NC=CN1 YAXVEVGFPVWPKA-UHFFFAOYSA-N 0.000 claims description 2
- SLLDUURXGMDOCY-UHFFFAOYSA-N 2-butyl-1h-imidazole Chemical compound CCCCC1=NC=CN1 SLLDUURXGMDOCY-UHFFFAOYSA-N 0.000 claims description 2
- XUZOLVDRTWTQJB-UHFFFAOYSA-N 2-heptadec-1-enyl-5-methyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCC=CC1=NC(C)=CN1 XUZOLVDRTWTQJB-UHFFFAOYSA-N 0.000 claims description 2
- RFWOZDRUDBNGSY-UHFFFAOYSA-N 2-heptadecyl-5-methyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC(C)=CN1 RFWOZDRUDBNGSY-UHFFFAOYSA-N 0.000 claims description 2
- OMBXZTBWATXTMQ-UHFFFAOYSA-N 2-methyl-1-(1-phenyltridecyl)imidazole Chemical compound C1=CN=C(C)N1C(CCCCCCCCCCCC)C1=CC=CC=C1 OMBXZTBWATXTMQ-UHFFFAOYSA-N 0.000 claims description 2
- SIQHSJOKAUDDLN-UHFFFAOYSA-N 2-methyl-1-propylimidazole Chemical compound CCCN1C=CN=C1C SIQHSJOKAUDDLN-UHFFFAOYSA-N 0.000 claims description 2
- WBDSXISQIHMTGL-UHFFFAOYSA-N 2-methyl-4,5-diphenyl-1h-imidazole Chemical compound N1C(C)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 WBDSXISQIHMTGL-UHFFFAOYSA-N 0.000 claims description 2
- UPOLYUOBDJSLRC-UHFFFAOYSA-N 2-undec-1-enyl-1h-imidazole Chemical compound CCCCCCCCCC=CC1=NC=CN1 UPOLYUOBDJSLRC-UHFFFAOYSA-N 0.000 claims description 2
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 claims description 2
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 claims description 2
- UPJQFPBIFZYRLB-UHFFFAOYSA-N 3-(4,5-diphenyl-1h-imidazol-2-yl)phenol Chemical compound OC1=CC=CC(C=2NC(=C(N=2)C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 UPJQFPBIFZYRLB-UHFFFAOYSA-N 0.000 claims description 2
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 claims description 2
- YGOFNNAZFZYNIX-UHFFFAOYSA-N 3-N-phenylbenzene-1,2,3-triamine Chemical compound NC=1C(=C(C=CC1)NC1=CC=CC=C1)N YGOFNNAZFZYNIX-UHFFFAOYSA-N 0.000 claims description 2
- LTGRDWFVGBZDIR-UHFFFAOYSA-N 4-(4,5-diphenyl-1h-imidazol-2-yl)-n,n-dimethylaniline Chemical compound C1=CC(N(C)C)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 LTGRDWFVGBZDIR-UHFFFAOYSA-N 0.000 claims description 2
- MJZYCDYAVCQQEQ-UHFFFAOYSA-N 5-tert-butyl-2-(4,5-diphenyl-1H-imidazol-2-yl)phenol Chemical compound OC1=CC(C(C)(C)C)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 MJZYCDYAVCQQEQ-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 claims description 2
- IKZDMJSZEMDIMC-UHFFFAOYSA-N chembl389656 Chemical compound OC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 IKZDMJSZEMDIMC-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims description 2
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- SEAZOECJMOZWTD-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethyl)silane Chemical compound CO[Si](OC)(OC)CC1CO1 SEAZOECJMOZWTD-UHFFFAOYSA-N 0.000 claims description 2
- BDHGFCVQWMDIQX-UHFFFAOYSA-N 1-ethenyl-2-methylimidazole Chemical compound CC1=NC=CN1C=C BDHGFCVQWMDIQX-UHFFFAOYSA-N 0.000 claims 1
- XIOGJAPOAUEYJO-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical compound COC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XIOGJAPOAUEYJO-UHFFFAOYSA-N 0.000 claims 1
- XDKUKGIJDNUFGK-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CN=C[N]1 XDKUKGIJDNUFGK-UHFFFAOYSA-N 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000000945 filler Substances 0.000 description 12
- 238000001723 curing Methods 0.000 description 10
- 229920003319 Araldite® Polymers 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000004014 plasticizer Substances 0.000 description 5
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910002012 Aerosil® Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229920000768 polyamine Polymers 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- KFUSXMDYOPXKKT-VIFPVBQESA-N (2s)-2-[(2-methylphenoxy)methyl]oxirane Chemical compound CC1=CC=CC=C1OC[C@H]1OC1 KFUSXMDYOPXKKT-VIFPVBQESA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- UIDDPPKZYZTEGS-UHFFFAOYSA-N 3-(2-ethyl-4-methylimidazol-1-yl)propanenitrile Chemical compound CCC1=NC(C)=CN1CCC#N UIDDPPKZYZTEGS-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- 229940086681 4-aminobenzoate Drugs 0.000 description 1
- 229910002014 Aerosil® 130 Inorganic materials 0.000 description 1
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- 229910002018 Aerosil® 300 Inorganic materials 0.000 description 1
- 235000013175 Crataegus laevigata Nutrition 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical class O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SOOZEQGBHHIHEF-UHFFFAOYSA-N methyltetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21C SOOZEQGBHHIHEF-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Definitions
- This invention relates to rheology-controlled epoxy- based compositions, particularly well suited for use in coating applications such as in the assembly of ink jet printheads for the printing industry, and in the microelectronics industry such as in the assembly of semiconductor devices.
- Epoxy-based compositions are well known. In fact, epoxy-based compositions are available for a variety of end uses .
- a flex circuit is first adhered to a silicon substrate via a barrier film. Portions of both the flex circuit and the substrate then are adhered to the pen body. To adhere the portions of the flex circuit to the pen body, the adjacent structures are heated to elevated temperatures, to cure an adhesive that has been applied to a groove about an opening in the pen body, so as to bond the flex circuit to the pen body. After curing, the pen is cooled to room temperature. In certain instances, the adhesive that has been applied may "run" out of the groove, particularly as the temperature begins to increase during the curing process .
- the adhesive tends to enter, and obstruct or clog (eventually permanently when cured) the nozzles of the flex circuit, through which ink drops are intended to be ejected. This event may lead to poor transfer of ink to paper at best, and oftentimes prevents the ink from flowing through the nozzles at all.
- Rheology control is oftentimes effected by the addition of fillers to increase viscosity, or the removal of fillers and/or the addition of plasticizers to improve flow.
- fillers While seemingly a simple matter, many adhesive compositions, particularly those that are epoxy based, already include fillers for other reasons. For instance, certain fillers may be added to the adhesive composition to confer thermal conductivity to the adhesive compositions . Other fillers may be added to aid in matching the coeffecients of thermal expansion ("CTE") between the substrates between which the adhesive is intended to be placed. Still other fillers may be added to improve yield point (the three dimensional structure of the adhesive composition) . As such, addition of further fillers to build rheology may prove too much to allow for ready dispensing and may interfere with the dispensing process. In the context of ink jet printheads, the addition of fillers to build viscosity may also result in clogging or obstructing the nozzles through which ink is to flow, in the event some wicking of the adhesive occurs .
- CTE coeffecients of thermal expansion
- an epoxy-based composition is in the assembly of microelectronic devices .
- Advances in the electronics industry have made precise deposition of epoxy-based compositions a critical processing parameter, particularly in view of the demands for high throughput and process efficiency.
- flow may be improved by adding a plasticizer.
- the addition of such a plasticizer is not without cost. That is, inclusion of such plasticizers may impact adversely the physical properties of the cured adhesive, such as weakening the strength of the adhesive bond formed.
- Degussa makes available commercially a number of treated fumed silicas under the tradename AEROSIL, and has suggested their use to impart in epoxy resins a thickening and thixotropic effect . See also CD. Wright and J.M. Muggee, "Epoxy Structural Adhesives” in Structural Adhesives: Chemistry and Technology, S.R. Hartshorn, ed. , 113-79, 131 (1986) .
- Carrier substrates and semiconductor devices used to assemble microelectronics devices are oftentimes constructed of, layered with or contain hard-to-bond materials, such as liquid crystal polymers, polyamides or silicone dies.
- adhesion-promoting materials As such, it is desirable to improve the adhesion of adhesive compositions to such substrates by adding adhesion-promoting materials or to first prime the surface of the substrates with an activator material prior to dispensing the adhesion formulation, the former being preferred in view of additional processing steps and decreased throughput observed with the latter, and the often unavailable space for a priming step. It would be desirable to provide to epoxy-based compositions adhesion promoting materials that also are capable of modifying the rheology of the compositions, so as to render the compositions with flow characteristics appropriate for the sought after end-use application.
- the present invention provides epoxy-based compositions with controllable rheological properties.
- the invention provides compositions that include an epoxy component, a rheology-control agent, and a curing agent .
- the invention provides reaction products ' of these epoxy-based compositions as well .
- the invention provides a method of controlling the viscosity of epoxy-based compositions without compromising the adhesive strength of reaction products of such compositions.
- the invention also provides a method of preparing such epoxy-based compositions, and a method of using such epoxy-based compositions in the assembly of ink jet printheads or microelectronic semiconductor devices .
- the present invention will be more fully understood by a reading of the "Detailed Description of the Invention", with reference to the figures, which follow.
- FIG. 1 is a perspective view of an ink jet printhead assembled with an epoxy composition according to the present invention.
- FIG. 2 depicts a cross- sectional view showing an example of a flip chip assembly with which an epoxy composition according to the present invention is used as an underfill sealant.
- FIG. 3 depicts a cross- sectional view showing an example of a semiconductor device to be mounted to a circuit board with an epoxy composition according to the present invention.
- FIG. 4 depicts a cross-sectional view showing an example of a mounted structure with which an epoxy composition according to the present invention is used as an underfill sealant .
- the present invention provides epoxy-based compositions having controlled rheo ⁇ ogical properties.
- the invention provides compositions that include an epoxy component, a rheology-control agent, and a curing agent .
- the epoxy resin component of the present invention may include any common epoxy resin, such as a multifunctional epoxy resin.
- the multifunctional epoxy resin should be included in an amount within the range of about 15 weight percent to about 75 weight percent of the total of the epoxy resin component.
- the amount thereof should be in the range of from about 35 to about 65 weight percent, such as about 40 to about 50 weight percent of the total of the epoxy resin component .
- multifunctional epoxy resin examples include bisphenol-A-type epoxy resin (such as RE-310-S from Nippon Kayaku, Japan) , bisphenol-F-type epoxy resin (such as RE-404-S from Nippon Kayaku) , phenol novolac-type epoxy resin, and cresol novolac-type epoxy resin (such as ARALDITE ECN 1871 from Ciba Specialty Chemicals, Hawthorne, New York or XD- 10002-L from Nippon Kayaku) .
- bisphenol-A-type epoxy resin such as RE-310-S from Nippon Kayaku, Japan
- bisphenol-F-type epoxy resin such as RE-404-S from Nippon Kayaku
- phenol novolac-type epoxy resin such as ARALDITE ECN 1871 from Ciba Specialty Chemicals, Hawthorne, New York or XD- 10002-L from Nippon Kayaku
- epoxy resins include polyepoxy compounds based on aromatic amines and epichlorohydrin, such as N,N,N' ,N' -tetraglycidyl-4, 4 ' -diaminodiphenyl methane; N- diglycidyl-4-aminophenyl glycidyl ether; and N,N,N',N'- tetraglycidyl-1, 3-propylene bis-4-aminobenzoate .
- polyepoxy compounds based on aromatic amines and epichlorohydrin such as N,N,N' ,N' -tetraglycidyl-4, 4 ' -diaminodiphenyl methane; N- diglycidyl-4-aminophenyl glycidyl ether; and N,N,N',N'- tetraglycidyl-1, 3-propylene bis-4-aminobenzoate .
- epoxy resins suitable for use herein also include polyglycidyl derivatives of phenolic compounds, such as those available commercially under the tradename EPON, such as EPON 828, EPON 1001, EPON 1009, and EPON 1031 from Shell
- Suitable epoxy resins include polyepoxides prepared from polyols and the like and polyglycidyl derivatives of phenol-formaldehyde novolacs, the latter of which are available commercially under the tradename DEN, such as DEN 431, DEN 438, and DEN 439 from Dow Chemical. Cresol analogs are also available commercially
- ARALDITE such as ARALDITE ECN 1235
- ARA DITE ECN 1273 is a bisphenol-A-type epoxy novolac available from Interez, Inc. Polyglycidyl adducts of amines, aminoalcohols and polycarboxylic acids are also useful in this
- the rheology control agent should be used in an amount within the range of about 0.01 to about 2 percent by weight, such as about 0.1 'to about 1 percent by weight.
- the rheology control agent includes silanes, such as epoxy silanes [e.g. , glycidyl trimethoxysilane (commercially available from OSI under the trade designation A-187)] , and amino silanes re . ⁇ . , gamma-amino propyl triethoxysilane (commercially available from OSI under the trade designation
- trialkoxysilyl isocyanurate derivatives e.g. , Y-11597 from OSI
- use of the epoxy silanes in the inventive epoxy- based compositions will tend to impart thixotropy on the compositions, and use of the amino silanes in the inventive
- the curing agent is capable of catalyzing polymerization of the epoxy resin component of the inventive
- the curing agent may be used in an amount of from about 1 to about 25 percent by weight, such as from about 5 to about 8 percent by weight, desirably about 6 to about 6.5 percent by weight of the total composition.
- Desirable curing agents for use with the present invention include nitrogen-containing compounds, such as amine compounds, amide compounds, imidazole compounds, and combinations thereof.
- amine compounds include aliphatic polyamines, such as diethylenetriamine, triethylenetetraamine and diethylaminopropylamine; aromatic polyamines, such as m- xylenediamine and diaminodiphenylamine; and alicyclic polyamines, such as isophoronediamine and menthenediamine .
- aliphatic polyamines such as diethylenetriamine, triethylenetetraamine and diethylaminopropylamine
- aromatic polyamines such as m- xylenediamine and diaminodiphenylamine
- alicyclic polyamines such
- amide compounds include cyano- functionalized amides, such as dicyandiamide .
- the imidazole compounds may be chosen from imidazole, isoimidazole, and substituted imidazoles -- such as alkyl-substituted imidazoles (e.g.
- Examples of commercially available imidazole compounds include those from Air Products, Allentown, Pennsylvania under the trade designation CUREZOL 1B2 Z, from Synthron, Inc., Morganton, North Carolina under the trade designation ACTIRON NXJ-60, and from Borregaard Synthesis under the trade designation CURAMID CN.
- the fillers are used for the purpose of providing thermal conductivity, CTE matching and/or yield point improvement.
- These fillers may be chosen from reinforcing silicas, such as fused or fumed silicas, which may be treated or untreated so as to alter the chemical nature of their surface, may be used.
- Such treated fumed silicas include polydimethylsiloxane-treated silicas and hexamethyldisilazane- treated silicas.
- Such treated silicas are commercially available, such as from Cabot Corporation under the tradename CAB-O-SIL ND-TS and Degussa Corporation under the tradename AEROSIL, such as AEROSIL R805.
- amorphous and hydrous silicas may be used.
- commercially available amorphous silicas include AEROSIL 300 with an average particle size of the primary particles of about 7 nm, AEROSIL 200 with an average particle size of the primary particles of about 12 nm, AEROSIL 130 with an average size of the primary particles of about 16 nm; and commercially available hydrous silicas include NIPSIL E150 with an average particle size of 4.5 nm, NIPSIL E200A with and average particle size of 2.0 nm, and NIPSIL E220A with an average particle size of 1.0 nm (manufactured by Japan Silica Kogya Inc.).
- Desirable ones also have a low ion concentration and are relatively small in particle size (e.g. , on the order of about 2 microns) , such as the silica commercially available from Ad atechs, Japan under the trade designation SO-E5.
- Other desirable ones include ZEOTHIX 95, which is an amorphous precipitated silica (commercially available from J.M. Huber Corporation) .
- Still other desirable materials for use as the inorganic filler component include those constructed of or containing aluminum oxide, silicon nitride, aluminum nitride and silica-coated aluminum nitride.
- the inorganic filler component should be used in the inventive compositions in an amount within the range of 5 to 40 percent by weight, such as about 20-28 percent by weight, desirably about 24 percent by weight of the composition.
- the rheology-controlled epoxy-based compositions may further include an anhydride component .
- anhydrides include mono- and poly-anhydrides, such as hexahydrophthalic anhydride ("HHPA”) and methyl hexahydrophthalic anhydride (“MHHPA”) (commercially available from Lindau Chemicals, Inc., Columbia, South Carolina, used individually or as a combination, which combination is available under the trade designation LINDRIDE 62C) , 5- (2,5- dioxotetrahydrol ) -3 -methyl-3 -cyclohexene- 1 , 2 -dicarboxylic anhydride (commercially available from ChrisKev Co., Leewood, Kansas under the trade designation B-4400) and nadic methyl anhydride .
- HHPA hexahydrophthalic anhydride
- MHHPA methyl hexahydrophthalic anhydride
- the cure agent When used, the cure agent may be present in an amount of from about 3 to about 100 percent by weight, based on the weight of the epoxy resin component, the chosen amount depending of course on the type and identity of the anhydride, and whether a cure agent is used as well.
- a method of controlling the rheology of epoxy-based compositions This method allows for a control of the rheology, without compromising the adhesive strength of reaction products of such compositions, which ordinarily would be observed due to conventional additives used for this purpose .
- the method involves adding to an epoxy-based composition an amount of a rheology-control agent sufficient to adjust the viscosity of the composition to the desired amount .
- a method of preparing such epoxy-based compositions This method involves combining an epoxy resin component, a rheology control agent, and a curing agent, and optionally an inorganic filler component .
- a method of using such epoxy-based compositions in the assembly of ink jet printheads or microelectronic semiconductor devices include generally dispensing onto a substrate a sufficient amount of the curable one-part epoxy resin composition, positioning over the epoxy resin composition dispensed onto the substrate an electronic component, a flex circuit, or a pen body, mating the electronic component, flex circuit or pen body, respectively with the substrate to form an assembly, and exposing the assembly to conditions favorable to effect cure of the curable one-part epoxy resin composition.
- the epoxy-based compositions of this invention may be prepared by selecting the type and amount of various components to reach a viscosity at a temperature of 25°C in the range of 500 to 70,000 cps, such as 800 to 3,000 cps, depending on the amount present of an inorganic filler component, so as to improve its ability to penetrate into the space (e.g. , of 10 to 200 ⁇ m) between the circuit board and the semiconductor device.
- the adhesive should have flow characteristics appropriate to allow for rapid spreading about and around a grooved surface, the adhesive should have a viscosity at a temperature of 25°C at 5 sees "1 in the range of about 35,000 cps to about 70,000 cps and at 20 sees "1 in the range of about 24,000 cps to about 40,000 cps.
- surface mount adhesives should have yield points in the range of about 30 Pa to about 70 Pa.
- FIG. 1 shows the printhead region of a conventional inkjet edge-feed pen 10.
- the pen includes a pen body 12, silicon substrate 14, and flex circuit 16.
- Ink is delivered to the ink chambers through ink channels that are in fluid communication with an ink 'Supply.
- the ink supply may be, for example, contained in a reservoir part of the pen.
- ink flows from channel 18 to printhead nozzles 20.
- the nozzles are defined by the silicon substrate 14 and flex circuit 16.
- the flex circuit 16 is attached to the silicon substrate 14 using an adhesive.
- the flex circuit/substrate assembly is then attached to the pen body 12 using an adhesive.
- substrate 14 and flex circuit 16 are heated to cure the adhesive. Once the adhesive cures, the pen body 12, substrate 14 and flex circuit 16 are heated to cure the adhesive. Once the adhesive cures, the pen body 12, substrate 14 and flex circuit 16 are heated to cure the adhesive. Once the adhesive cures, the pen body 12, substrate 14 and flex circuit 16 are heated to cure the adhesive. Once the adhesive cures, the pen body 12, substrate 14 and flex circuit 16 are heated to cure the adhesive. Once the adhesive cures, the pen body 12, substrate
- the adhesive may become embedded in either its uncured or cured state therein and therearound. This event impedes newly fired ink from the printhead and at best results in poor resolution of the ink emitted onto the ink receiving substrate. As such, tailoring the adhesive composition to have a rheology appropriate for the application may significantly reduce, if not eliminate, the potential for this occurrence .
- FIG. 2 shows a FC assembly in which an epoxy composition of the present invention has been applied and cured.
- the FC assembly 24 is formed by connecting a semiconductor chip (a bare chip) 22 to a circuit board 21 and sealing the space therebetween suitably with a thermosetting resin composition 23.
- the semiconductor chip 22 may be passed over a substrate bearing a conductive adhesive paste (such as a metal-filled epoxy) to form a layer thereof on the semiconductor chip 22.
- a conductive adhesive paste such as a metal-filled epoxy
- the layer is ordinarily formed by a printing mechanism.
- the conductive adhesive paste may be applied on either the carrier substrate or the semiconductor chip, One way to do this is with the stencil claimed and described in International Patent Publication No. PCT/FR95/00898. Alternatively, this connection may also be made by an anisotropically conductive adhesive. See International Patent Publication No. PCT/US97/13677,
- the semiconductor chip 22 is positioned over the carrier substrate 21 in such a manner so that the semiconductor chip 22 is in alignment with the electrodes 25 and 26 on the circuit board 21, now coated with a patterned layer of conductive adhesive paste or solder, 27 and 28.
- the conductive adhesive paste may be cured by a variety of ways, though ordinarily a heat cure mechanism is employed.
- the space between the semiconductor chip 22 and the circuit board 21 is sealed with an underfill sealing composition 23, such as is within the scope of this invention.
- the epoxy-based compositions of the present invention penetrate and flow readily into the space between the semiconductor chip and the circuit board, or at least show a reduction in viscosity under heated or use conditions thus allow for ready penetration and flow.
- the gel times of the compositions are often tailored to a specified period of time (such as 15 seconds, or 1 or 2 minutes) at a temperature of about 150°C.
- the inventive compositions should show no or substantially no increase of viscosity after a period of time of about six hours. With such a gel time, the compositions penetrate into the space (e.g. , of 10 to 200 ⁇ m) between the circuit board and the semiconductor device relatively rapidly, and allow for a greater number of assemblies to be filled without observing a viscosity increase in the composition thereby rendering it less effective for application.
- the epoxy resin compositions of the present invention may be applied to a substrate in any conventional fashion. Suitable application modes include syringe dispensing, pin-transfer, screen printing, and through other conventional adhesive dispensing equipment .
- the amount of composition applied should be suitably
- thermosetting resin composition is then thermally cured by the application of heat . During the early stage of this heating, the
- thermosetting resin composition shows a significant reduction in viscosity and hence an increase in fluidity, so that it more easily penetrates into the space between the carrier substrate and the semiconductor chip. Moreover, by preheating the carrier substrate, the thermosetting resin composition is
- thermosetting resin composition [5 allowed to penetrate fully into the entire space between the carrier substrate and the semiconductor chip.
- the cured . product of the thermosetting resin composition should completely fill that space.
- the semiconductor chip ordinarily may be coated with
- Carrier substrates may be constructed from ceramic substrates of A1 2 0 3 , SiN 3 and mullite (Al 2 0 3 -Si0 2 ) ; substrates or tapes of heat-resistant resins, such as polyimides; glass-
- the electrodes may be formed as wire bond bumps .
- the resulting structure is ordinarily subjected to a continuity test or the like.
- the semiconductor chip may be fixed thereto with a thermosetting resin composition, as described below. In this way, in the event of a failure, the semiconductor chip may be removed before it is fixed to the carrier substrate with the thermosetting resin composition.
- a mounted structure or chip scale package on which an epoxy composition 34 within the scope of the invention, has been disposed onto a circuit board 31 between the solder lands 33 is shown.
- FIG. 3 shows the epoxy composition 34 having been dispensed onto the circuit board 31; in certain instances it may be desirable to apply the composition onto the semiconductor chip 32 instead, or apply the composition onto both the circuit board 31 and the semiconductor chip 32.
- the composition is then cured, as above.
- the semiconductor device (or chip scale package) 40 is one formed as noted above by electrically connecting a semiconductor chip 42 to a carrier substrate 41 and sealing the space therebetween with an underfill sealant 43, such as in accordance with the invention.
- This semiconductor device 40 is mounted using a surface mount adhesive 46 at a predetermined position of the circuit board 45, and electrodes 48 and 49 are electrically connected by a suitable connection means such as solder.
- a suitable connection means such as solder.
- the space between semiconductor device 40 and circuit board 45 is sealed with an underfill sealant, also such as in accordance with the invention.
- the compositions of the present invention may ordinarily be cured by heating to a temperature in the range of about 120 to about 200°C for a period of time of about 0.5 minutes to about 2 hours. However, generally after application of the composition, an initial cure time of about 1 minute sets up the composition, and complete cure is observed after about 5 to about 15 minutes at about 165°C.
- the composition of the present invention can be used at relatively moderate temperatures and short-time curing conditions, and hence achieve very good productivity.
- Cured reaction products of the compositions of the present invention demonstrate excellent adhesive force, heat resistance and electric properties, and acceptable mechanical properties, such as flex-cracking resistance, chemical resistance, moisture resistance and the like, for the applications for which they are used herein.
- epoxy-based compositions in accordance with the present invention were prepared and evaluated for performance .
- An epoxy-based composition in accordance with this invention was prepared by mixing together for a period of time of about 10 minutes at room temperature in an open vessel the following components in the order noted:
- an epoxy resin component including
- a rheology control agent including
- an inorganic filler component including 15 percent by weight of an amorphous precipitated silica (commercially available from J.M. Huber Corporation under the trade designation ZEOTHIX 95) , and
- This formulation also included 4 percent by weight of a diluent (o-cresyl glycidyl ether, commercially available from CVC under the trade designation GE-10) .
- a diluent o-cresyl glycidyl ether, commercially available from CVC under the trade designation GE-10) .
- Example Nos . 2-4 Three other formulations (Sample Nos . 2-4) were prepared having the following components in the amounts noted below in Table 1.
- compositions were used upon formation (see below) , they may be stored for extended periods of time such as of up to about 3 to about 6 months, at a temperature of about -40 °C without experiencing viscosity increase.
- composition was transferred to a 10 ml syringe made of non-reactive plastic.
- compositions have a variety of properties in both the uncured and cured state which are measurable and useful parameters for the end user in choosing a particular formulation for a desired need.
- the viscosity and yield point are of interest; in reaching the cured state, the cure schedule is of interest .
- the viscostiy allows the end user to determine the rapidity with which the adhesive may be applied during a fabrication process, such as a circuit assembly operation. It may be measured using conventional techniques with a Haacke viscometer .
- the yield point (or yield stress) may generally be thought of as the minimum stress required to cause a material to flow.
- the cure schedule refers to the time required for the onset of cure to occur at a certain temperature, in a specified period of time. This may be seen in more detail with reference to Table 2.
- the adhesion provides ' information on the strength of the bond formed by the cured composition.
- the glass transition temperature (Tg) which is measured by differential scanning calorimetry (DSC) or by thermal mechanical analysis (TMA) , provides information on the hardness and strength of the cured reaction product (or, network) , and its behavior with respect to changes in temperature -- that is, a higher Tg should afford a material that is better able to withstand elevated temperatures.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01926841A EP1282660A4 (fr) | 2000-04-21 | 2001-04-23 | Compositions a base de resine epoxyde regulees par agent rheologique |
JP2001580224A JP2003531941A (ja) | 2000-04-21 | 2001-04-23 | レオロジー調整したエポキシ系組成物 |
AU2001253351A AU2001253351A1 (en) | 2000-04-21 | 2001-04-23 | Rheology-controlled epoxy-based compositions |
KR1020027014071A KR20020091224A (ko) | 2000-04-21 | 2001-04-23 | 유동성 조절된 에폭시계 조성물 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19874400P | 2000-04-21 | 2000-04-21 | |
US60/198,744 | 2000-04-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001083607A1 true WO2001083607A1 (fr) | 2001-11-08 |
Family
ID=22734625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/011727 WO2001083607A1 (fr) | 2000-04-21 | 2001-04-23 | Compositions a base de resine epoxyde regulees par agent rheologique |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1282660A4 (fr) |
JP (1) | JP2003531941A (fr) |
KR (1) | KR20020091224A (fr) |
AU (1) | AU2001253351A1 (fr) |
WO (1) | WO2001083607A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1460684A1 (fr) * | 2003-03-18 | 2004-09-22 | Delphi Technologies, Inc. | Procédé et matériau de sous-remplissage sans écoulement |
US9480164B2 (en) | 2011-05-31 | 2016-10-25 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg, and laminate |
US10178767B2 (en) | 2012-11-28 | 2019-01-08 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg, laminate, metallic foil clad laminate, and printed circuit board |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5114111B2 (ja) * | 2006-09-07 | 2013-01-09 | 日東シンコー株式会社 | 樹脂組成物、熱伝導シート、金属箔付高熱伝導接着シート、ならびに、金属板付高熱伝導接着シート |
JP5958799B2 (ja) * | 2012-03-08 | 2016-08-02 | パナソニックIpマネジメント株式会社 | 半導体封止用液状エポキシ樹脂組成物とそれを用いた半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3849187A (en) * | 1970-03-08 | 1974-11-19 | Dexter Corp | Encapsulant compositions for semiconductors |
US5908881A (en) * | 1996-11-29 | 1999-06-01 | Sumitomo Bakelite Company Limited | Heat-conductive paste |
US6180696B1 (en) * | 1997-02-19 | 2001-01-30 | Georgia Tech Research Corporation | No-flow underfill of epoxy resin, anhydride, fluxing agent and surfactant |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3532653A (en) * | 1969-02-27 | 1970-10-06 | United States Steel Corp | Epoxy adhesive compositions containing amine hardener and tertiar y amine catalyst |
US4248920A (en) * | 1978-04-26 | 1981-02-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Resin-sealed semiconductor device |
US5476884A (en) * | 1989-02-20 | 1995-12-19 | Toray Industries, Inc. | Semiconductor device-encapsulating epoxy resin composition containing secondary amino functional coupling agents |
US5013383A (en) * | 1989-07-11 | 1991-05-07 | Hewlett-Packard Company | Epoxy adhesive for use with thermal ink-jet printers |
US5346743A (en) * | 1992-03-13 | 1994-09-13 | Kabushiki Kaisha Toshiba | Resin encapsulation type semiconductor device |
TW357180B (en) * | 1994-07-19 | 1999-05-01 | Sumitomo Chemical Co | An epoxy resin composition and semiconductor device sealed with the above epoxy resin composition |
JP3576684B2 (ja) * | 1995-03-03 | 2004-10-13 | キヤノン株式会社 | インクジェットヘッド及びインクジェット装置 |
JP3435250B2 (ja) * | 1995-03-20 | 2003-08-11 | コニシ株式会社 | 接着剤組成物 |
JP3851441B2 (ja) * | 1998-04-23 | 2006-11-29 | 日東電工株式会社 | 光半導体素子封止用エポキシ樹脂組成物及び光半導体装置 |
JP2002540235A (ja) * | 1999-03-23 | 2002-11-26 | ロックタイト コーポレーション | 再処理可能な熱硬化性樹脂組成物 |
-
2001
- 2001-04-23 WO PCT/US2001/011727 patent/WO2001083607A1/fr not_active Application Discontinuation
- 2001-04-23 EP EP01926841A patent/EP1282660A4/fr not_active Withdrawn
- 2001-04-23 JP JP2001580224A patent/JP2003531941A/ja active Pending
- 2001-04-23 AU AU2001253351A patent/AU2001253351A1/en not_active Abandoned
- 2001-04-23 KR KR1020027014071A patent/KR20020091224A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3849187A (en) * | 1970-03-08 | 1974-11-19 | Dexter Corp | Encapsulant compositions for semiconductors |
US5908881A (en) * | 1996-11-29 | 1999-06-01 | Sumitomo Bakelite Company Limited | Heat-conductive paste |
US6180696B1 (en) * | 1997-02-19 | 2001-01-30 | Georgia Tech Research Corporation | No-flow underfill of epoxy resin, anhydride, fluxing agent and surfactant |
Non-Patent Citations (1)
Title |
---|
See also references of EP1282660A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1460684A1 (fr) * | 2003-03-18 | 2004-09-22 | Delphi Technologies, Inc. | Procédé et matériau de sous-remplissage sans écoulement |
US6943058B2 (en) | 2003-03-18 | 2005-09-13 | Delphi Technologies, Inc. | No-flow underfill process and material therefor |
US9480164B2 (en) | 2011-05-31 | 2016-10-25 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg, and laminate |
US10178767B2 (en) | 2012-11-28 | 2019-01-08 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg, laminate, metallic foil clad laminate, and printed circuit board |
Also Published As
Publication number | Publication date |
---|---|
AU2001253351A1 (en) | 2001-11-12 |
EP1282660A1 (fr) | 2003-02-12 |
KR20020091224A (ko) | 2002-12-05 |
EP1282660A4 (fr) | 2003-06-18 |
JP2003531941A (ja) | 2003-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20030036587A1 (en) | Rheology-controlled epoxy-based compositons | |
US7109061B2 (en) | Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith | |
US6881591B2 (en) | Underfilling material for semiconductor package | |
US7351784B2 (en) | Chip-packaging composition of resin and cycloaliphatic amine hardener | |
US6706417B2 (en) | Fluxing underfill compositions | |
US20070104960A1 (en) | Liquid epoxy resin composition | |
US6548189B1 (en) | Epoxy adhesive | |
JP5387874B2 (ja) | 液状封止樹脂組成物を用いた半導体装置の製造方法 | |
US20080051524A1 (en) | Epoxy-Based Compositions Having Improved Impact Resistance | |
US20090255629A1 (en) | Fluid ejection device utilizing a one-part epoxy adhesive | |
TWI480326B (zh) | 用於含低k介電質之半導體裝置中作為底填密封劑之可固化樹脂組合物 | |
JP2007056070A (ja) | フリップチップ型半導体装置用アンダーフィル材、並びにそれを用いたフリップチップ型半導体装置及びその製造方法 | |
JP2012054363A (ja) | 電子部品の封止方法 | |
TW202122270A (zh) | 模具底部填充封裝用的多層片材、模具底部填充封裝方法、電子元件安裝基板及電子元件安裝基板的製造方法 | |
US20070116962A1 (en) | Liquid epoxy resin composition | |
US20070152311A1 (en) | Chip-packaging compositions including bis-maleimides, packages made therewith, and methods of assembling same | |
WO2011065365A1 (fr) | Composition de résine époxy de scellement des semi-conducteurs et semi-conducteurs | |
EP1282660A1 (fr) | Compositions a base de resine epoxyde regulees par agent rheologique | |
KR20010043524A (ko) | 재작업 가능한 열경화성 수지 조성물 | |
KR20100075212A (ko) | 고온 속경화형 접착필름 조성물 및 이를 이용한 접착필름 | |
US6627683B1 (en) | Reworkable thermosetting resin compositions and compounds useful therein | |
US7108920B1 (en) | Reworkable compositions incorporating episulfide resins | |
KR101557123B1 (ko) | 언더필용 조성물 및 이를 이용한 전자 소자 실장 방법 | |
JP2003268203A (ja) | ウエハーモールド用液状エポキシ樹脂組成物及びこれを用いた半導体装置 | |
WO1999067324A1 (fr) | Compositions de resine thermodurcissable utilisees comme resines de remplissage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10204871 Country of ref document: US |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 580224 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001926841 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027014071 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027014071 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001926841 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2001926841 Country of ref document: EP |