WO2001080286A3 - Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation - Google Patents

Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation Download PDF

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Publication number
WO2001080286A3
WO2001080286A3 PCT/US2001/012281 US0112281W WO0180286A3 WO 2001080286 A3 WO2001080286 A3 WO 2001080286A3 US 0112281 W US0112281 W US 0112281W WO 0180286 A3 WO0180286 A3 WO 0180286A3
Authority
WO
WIPO (PCT)
Prior art keywords
separation
laminate
materials
applications
sarcrificial
Prior art date
Application number
PCT/US2001/012281
Other languages
English (en)
Other versions
WO2001080286A2 (fr
Inventor
Stephen J Fonash
Ali Kaan Kalkan
Sanghoon Bae
Dan Hayes
Wook Jun Nam
Kyuhwan Chang
Youngchul Lee
Original Assignee
Penn State Res Found
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/580,105 external-priority patent/US6399177B1/en
Priority claimed from US09/739,940 external-priority patent/US6794196B2/en
Application filed by Penn State Res Found filed Critical Penn State Res Found
Priority to CA002406214A priority Critical patent/CA2406214A1/fr
Priority to JP2001577585A priority patent/JP2004507880A/ja
Priority to KR1020027013867A priority patent/KR20020093919A/ko
Priority to EP01934877A priority patent/EP1280617A4/fr
Priority to AU2001261026A priority patent/AU2001261026A1/en
Publication of WO2001080286A2 publication Critical patent/WO2001080286A2/fr
Publication of WO2001080286A3 publication Critical patent/WO2001080286A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/008—Manufacture of substrate-free structures separating the processed structure from a mother substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)
  • Weting (AREA)

Abstract

Selon l'invention, on utilise des matériaux à grand rapport surface-volume pour des applications de séparation, de couche de libération et de matériau sacrificiel. L'invention porte sur la notion de matériau, les conceptions d'application et les méthodologies de fabrication. On utilise des matériaux déposés en réseau de colonnes/vides en tant qu'exemples de matériaux à grand rapport surface-volume. Plusieurs applications spécifiques montrent l'intérêt de créer des structures sur un laminé posé sur un substrat-mère et, ensuite, suivant l'approche matériau d'application de séparation, de séparer ce laminé du substrat-mère selon ledit programme de séparation. Lesdits matériaux constituent en outre un excellent utilitaire de couche de libération. Plusieurs applications montrent également comment utiliser l'approche pour former uniquement des cavités, des canaux, des entrefers et des structures connexes à l'intérieur de divers substrats ou sur ces derniers. Enfin, il est également possible et intéressant de combiner les programmes relatifs à la formation de cavités à celui concernant la séparation de laminé.
PCT/US2001/012281 2000-04-17 2001-04-17 Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation WO2001080286A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA002406214A CA2406214A1 (fr) 2000-04-17 2001-04-17 Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation
JP2001577585A JP2004507880A (ja) 2000-04-17 2001-04-17 堆積された薄膜、並びに分離及び犠牲層への適用におけるその使用
KR1020027013867A KR20020093919A (ko) 2000-04-17 2001-04-17 피착된 박막, 및 이것의 분리 및 희생층어플리케이션으로의 이용
EP01934877A EP1280617A4 (fr) 2000-04-17 2001-04-17 Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation
AU2001261026A AU2001261026A1 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US19754800P 2000-04-17 2000-04-17
US60/197,548 2000-04-17
US20193700P 2000-05-05 2000-05-05
US60/201,937 2000-05-05
US09/580,105 2000-05-30
US09/580,105 US6399177B1 (en) 1999-06-03 2000-05-30 Deposited thin film void-column network materials
US20819700P 2000-05-31 2000-05-31
US60/208,197 2000-05-31
US21553800P 2000-06-30 2000-06-30
US60/215,538 2000-06-30
US23162600P 2000-09-11 2000-09-11
US60/231,626 2000-09-11
US23579400P 2000-09-27 2000-09-27
US60/235,794 2000-09-27
US09/739,940 2000-12-19
US09/739,940 US6794196B2 (en) 1999-12-20 2000-12-19 Deposited thin films and their use in detection, attachment and bio-medical applications
US26820801P 2001-02-12 2001-02-12
US60/268,208 2001-02-12

Publications (2)

Publication Number Publication Date
WO2001080286A2 WO2001080286A2 (fr) 2001-10-25
WO2001080286A3 true WO2001080286A3 (fr) 2002-02-07

Family

ID=27578668

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/012281 WO2001080286A2 (fr) 2000-04-17 2001-04-17 Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation

Country Status (6)

Country Link
EP (1) EP1280617A4 (fr)
JP (1) JP2004507880A (fr)
CN (1) CN1427749A (fr)
AU (1) AU2001261026A1 (fr)
CA (1) CA2406214A1 (fr)
WO (1) WO2001080286A2 (fr)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427526B2 (en) 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
DE10155349C2 (de) * 2001-11-02 2003-11-20 Fraunhofer Ges Forschung Mikrobrennstoffzellensystem sowie Verfahren zu seiner Herstellung
WO2003060986A2 (fr) * 2002-01-11 2003-07-24 The Pennsylvania State University Utilisation de couches sacrificielles dans la fabrication de systemes haute performance sur substrats sur mesure
CN1328811C (zh) 2002-01-29 2007-07-25 松下电器产业株式会社 具有燃料电池的半导体装置及其制造方法
US6921014B2 (en) * 2002-05-07 2005-07-26 General Electric Company Method for forming a channel on the surface of a metal substrate
FR2844395A1 (fr) * 2002-09-06 2004-03-12 St Microelectronics Sa Procede de realisation d'un composant electronique integre et dispositif electrique incorporant un composant integre ainsi obtenu
FR2844396B1 (fr) * 2002-09-06 2006-02-03 St Microelectronics Sa Procede de realisation d'un composant electronique integre et dispositif electrique incorporant un composant integre ainsi obtenu
US7029781B2 (en) 2003-01-21 2006-04-18 Stmicroelectronics, Inc. Microfuel cell having anodic and cathodic microfluidic channels and related methods
JP2006522475A (ja) * 2003-04-02 2006-09-28 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 可撓性電子装置及び可撓性装置を製造する方法
SE526192C2 (sv) * 2003-04-17 2005-07-26 Micromuscle Ab Metod för att framställa en anordning
FR2857163B1 (fr) * 2003-07-01 2008-12-26 Commissariat Energie Atomique Pile a combustible dans laquelle un fluide circule sensiblement parallelement a la membrane electrolytique et procede de fabrication d'une telle pile a combustible
US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
JP2008517782A (ja) 2004-11-01 2008-05-29 ナノファイバー エイ／エス 有機ナノファイバーのソフトリフトオフ
JP4479006B2 (ja) * 2005-07-28 2010-06-09 セイコーエプソン株式会社 半導体装置の製造方法
US20080020923A1 (en) * 2005-09-13 2008-01-24 Debe Mark K Multilayered nanostructured films
DE102005045053A1 (de) * 2005-09-21 2007-03-29 Elringklinger Ag Verfahren zum Herstellen einer Dichtungsanordnung für einen Brennstoffzellenstapel und Dichtungsanordnung für einen Brennstoffzellenstapel
JP5345404B2 (ja) * 2006-03-14 2013-11-20 インスティチュート フュア ミクロエレクトロニク シュトゥットガルト 集積回路の製造方法
WO2008036837A2 (fr) 2006-09-20 2008-03-27 The Board Of Trustees Of The University Of Illinois Strategies de liberation mises en œuvre dans la fabrication de structures semiconductrices transferables, de dispositifs et de composants de dispositifs
US7851876B2 (en) 2006-10-20 2010-12-14 Hewlett-Packard Development Company, L.P. Micro electro mechanical system
JP5377066B2 (ja) * 2009-05-08 2013-12-25 キヤノン株式会社 静電容量型機械電気変換素子及びその製法
TWI444945B (zh) * 2011-08-23 2014-07-11 E Ink Holdings Inc 用於製作軟性顯示裝置之基板、結構及軟性顯示裝置的製作方法
FR2950733B1 (fr) * 2009-09-25 2012-10-26 Commissariat Energie Atomique Procede de planarisation par ultrasons d'un substrat dont une surface a ete liberee par fracture d'une couche enterree fragilisee
CN102104087B (zh) * 2010-12-15 2012-11-07 上海理工大学 一种柔性薄膜太阳能电池制备方法
KR101241708B1 (ko) * 2011-01-27 2013-03-11 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
CN102320558B (zh) * 2011-09-13 2014-03-26 上海先进半导体制造股份有限公司 全硅基微流体器件的腔体的制造方法
CN104247068B (zh) * 2012-04-23 2017-12-05 南洋理工大学 用于分离多层结构的装置和方法
CN104081552B (zh) * 2012-12-28 2016-08-10 深圳市柔宇科技有限公司 柔性电子器件的制作方法和制作柔性电子器件的基板
US11272621B2 (en) 2012-12-28 2022-03-08 Shenzhen Royole Technologies Co., Ltd. Substrate and method for fabricating flexible electronic device and rigid substrate
US9768271B2 (en) 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
CN103449358A (zh) * 2013-08-27 2013-12-18 上海先进半导体制造股份有限公司 Mems封闭腔体的制作方法
US9851327B2 (en) * 2014-06-02 2017-12-26 Maxim Integrated Products, Inc. Photopatternable glass micro electrochemical cell and method
KR102301501B1 (ko) * 2015-01-21 2021-09-13 삼성디스플레이 주식회사 가요성 표시 장치의 제조 방법
JP2018514083A (ja) * 2015-03-18 2018-05-31 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン プレパターニングされたメサを経由する歪み緩和エピタキシャルリフトオフ
EP3136443A1 (fr) 2015-08-28 2017-03-01 Nokia Technologies Oy Procédé de formation d'un appareil comprenant un matériau bidimensionnel
CN106226361A (zh) * 2016-08-31 2016-12-14 中国电子科技集团公司第四十九研究所 一种新型微热板式气体敏感元件
CN106784151B (zh) * 2016-12-28 2018-08-14 中国电子科技集团公司第十八研究所 一种柔性铜铟镓硒薄膜太阳电池制备方法
CN110068549B (zh) * 2018-01-22 2021-09-17 天津大学 一种可忽略力光耦合效应的柔性光子器件薄膜堆叠结构
CN109690773B (zh) 2018-12-07 2020-08-25 长江存储科技有限责任公司 半导体器件制造方法
CN111229339B (zh) * 2020-01-17 2021-11-30 上海新微技术研发中心有限公司 光栅波导微流体芯片的制造方法
DE102020203906A1 (de) * 2020-03-26 2021-09-30 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines mikromechanischen Sensors
CN112162015B (zh) * 2020-09-07 2024-06-11 天地（常州）自动化股份有限公司 一种抗气体干扰型mems气体传感器及制备方法
CN114858755B (zh) * 2022-07-05 2022-10-21 中国航发四川燃气涡轮研究院 一种航空发动机涂层变频原位激光检测系统
CN117153855B (zh) * 2023-10-30 2024-03-01 合肥晶合集成电路股份有限公司 一种背照式图像传感器的半导体结构及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849071A (en) * 1986-12-13 1989-07-18 Spectrol Reliance Limited Method of forming a sealed diaphragm on a substrate
US5262000A (en) * 1989-09-26 1993-11-16 British Telecommunications Public Limited Company Method for making micromechanical switch
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process
US5641709A (en) * 1994-08-30 1997-06-24 Lg Semicon Co., Ltd. Method of manufacturing a conductive micro bridge
US5834333A (en) * 1995-06-07 1998-11-10 Ssi Technologies, Inc. Transducer having a resonating silicon beam and method for forming same
US5855801A (en) * 1994-06-06 1999-01-05 Lin; Liwei IC-processed microneedles
US5907765A (en) * 1995-06-30 1999-05-25 Motorola, Inc. Method for forming a semiconductor sensor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
EP0895276A1 (fr) * 1997-07-31 1999-02-03 STMicroelectronics S.r.l. Procédé de fabrication de microstructures intégrées de matériau semi-conducteur en couches monocristallines

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849071A (en) * 1986-12-13 1989-07-18 Spectrol Reliance Limited Method of forming a sealed diaphragm on a substrate
US5262000A (en) * 1989-09-26 1993-11-16 British Telecommunications Public Limited Company Method for making micromechanical switch
US5855801A (en) * 1994-06-06 1999-01-05 Lin; Liwei IC-processed microneedles
US5641709A (en) * 1994-08-30 1997-06-24 Lg Semicon Co., Ltd. Method of manufacturing a conductive micro bridge
US5834333A (en) * 1995-06-07 1998-11-10 Ssi Technologies, Inc. Transducer having a resonating silicon beam and method for forming same
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process
US5907765A (en) * 1995-06-30 1999-05-25 Motorola, Inc. Method for forming a semiconductor sensor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1280617A4 *

Also Published As

Publication number Publication date
CN1427749A (zh) 2003-07-02
WO2001080286A2 (fr) 2001-10-25
AU2001261026A1 (en) 2001-10-30
CA2406214A1 (fr) 2001-10-25
EP1280617A4 (fr) 2005-08-03
EP1280617A2 (fr) 2003-02-05
JP2004507880A (ja) 2004-03-11

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