WO2001041177A2 - Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission - Google Patents
Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission Download PDFInfo
- Publication number
- WO2001041177A2 WO2001041177A2 PCT/CA2000/001423 CA0001423W WO0141177A2 WO 2001041177 A2 WO2001041177 A2 WO 2001041177A2 CA 0001423 W CA0001423 W CA 0001423W WO 0141177 A2 WO0141177 A2 WO 0141177A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- yttrium
- iron
- coating
- garnet
- microwave device
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 53
- 239000011248 coating agent Substances 0.000 title claims abstract description 48
- 239000002223 garnet Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011573 trace mineral Substances 0.000 claims description 5
- 235000013619 trace mineral Nutrition 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims 2
- 238000004381 surface treatment Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000004891 communication Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 230000005672 electromagnetic field Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- -1 berillium Chemical compound 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000383 hazardous chemical Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007744 chromate conversion coating Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Definitions
- the present invention relates to components for communication
- this invention is a surface treatment and method for applying a surface treatment to microwave components or other components
- the surface treatment is a
- additional electrons can be emitted from the surface of the component.
- the electrons may bounce back and forth inside the component, driven by the electromagnetic field. Each time an electron impacts the surface of the component, an additional secondary electron may be emitted. This phenomenon, known as multipaction, may lead to an electromagnetic field driven regeneration or avalanching of electrons that can cause deterioration of the component, modulation distortion, instabilities with
- frequency electromagnetic fields are therefore designed to minimize the effects of secondary electron emission and multipaction, and thus reduce the likelihood of
- secondary yield coefficient is used in this field to describe the ratio of the number of secondary electrons generated for each incident electron impacting on the surface of a component. If the secondary yield coefficient
- dimensions of the inner surfaces of the component can be designed so as to control or prevent secondary electron multiplication, and thus prevent an avalanche failure of the component.
- payloads such as those in communication satellites, where size and weight must be minimized. Furthermore, analyzing such designed components is difficult, and
- the component materials may degrade with time and exposure to a condition that may result in component failure.
- coatings have been applied to the inner surface of components in an attempt to either interrupt the electron flight path or prevent avalanching.
- This alternative is often not feasible in high power designs, however, due to dielectric heating of the surface and increase in loss; any macroscopically thin dielectric inserted in the path of secondary electrons will prevent multipaction, but may render the component unusable due to an increase in the loss, or other
- alodine alodining is the chemical application of a protective chromate conversion coating on an aluminum alloy
- An appropriate surface treatment must also resist peeling at high temperatures, may not outgas, and preferably does not
- the ideal surface treatment not only has a secondary yield coefficient of less than 1, but also
- garnet (YIG) which is applied to the inner surface of the component preferably
- the coating is preferably sputtered at an argon pressure of 4.5 x 10 "2 Torr at a RF power of 100 Watts at 13.56 MHZ.
- the resulting coating is preferably sputtered at an argon pressure of 4.5 x 10 "2 Torr at a RF power of 100 Watts at 13.56 MHZ.
- the secondary yield coefficient is reduced from about 1.4 to less than 1.
- FIG. 1 illustrates the typical placement of a coating of the invention on the
- FIG. 2 is a plot of the secondary yield coefficient vs. the primary incident
- micrometers in thickness placed upon the inner surface of a silver/copper/aluminum sample, where the coating was created by 25 minutes of
- the present invention is a coating for communication components
- the present invention is also directed to a method for applying this coating to a communication component.
- the coating material is comprised of yttrium-iron-garnet (YIG).
- YIG is within the family of materials broadly described as ferrites and garnets.
- the material is available commercially in the form of a compressed, sintered
- An exemplary suitable YIG comprises 45%> oxygen, 2.5%) aluminum, 4.5%> gadolinium, 28%>
- suitable YIG further comprises manganese as a trace element.
- trace elements such as magnesium, calcium, titanium, sodium, phosphorous, berillium, and cesium.
- additional trace elements such as magnesium, calcium, titanium, sodium, phosphorous, berillium, and cesium.
- a trace element is defined as an element present in about 0.05% or
- the surface onto which the coating is sputtered is usually silver-plated, and may alternatively be aluminum or silicon, although this invention is not limited to
- FIG. 1 illustrates a coating of the invention applied to the inner
- the coating (1) has been applied to the inner
- the coating (1) has also been
- the inner surface of the component or substrate to which the coating is applied (2) is represented by hatched areas, whereas the coating (1) is represented by non-hatched areas.
- argon is the working
- the coating target which is the YIG source material, is electrically
- a voltage source and the pressure in the sputtering chamber is lowered.
- plasma is developed that generates electrons and ions and imparts kinetic energy
- Ar + ions are extracted from the plasma and
- the coating surface material is freed into the sputtering
- the negative target ions are attracted to and adhere to the surface of the component, which is electrically charged as the anode.
- the sputtering rate is determined by target voltage and current
- a coating of the invention was made by the following method.
- sputter target was made by cutting a 3/4" diameter, 3/16" in height circular disc
- target clamp housing was machined from aluminum.
- the clean metal substrate (representative of an electrical component) to be coated was then placed in the sputter chamber approximately 2" away from and facing the YIG target.
- sputter chamber was allowed to reach 10 "8 Torr before sputtering.
- argon gas was then leaked into the sputter chamber via a precision leak valve and the pressure was allowed to increase until a plasma was struck on the YIG target (about 10 "1 Torr). After achieving a sputter plasma, the argon pressure was
- a YIG coating is formed on the metal substrate at the rate of approximately 20 nm/minute.
- the graph (5) illustrates the change in secondary
- a coating thickness of approximately 0.5 micrometers was
- differential thermal expansion due to plasma heating of the substrate during sputtering between the aluminum and growing YIG film may play apart.
- a satisfactory YIG coating is therefore, about 1.5 micrometers or less in thickness, preferably about 0.2 to about 0.75 micrometers, most preferably about 0.5 micrometers in thickness.
- the RF power is about 100 Watts.
- the YIG target may crack severely which may adversely affect the coating characteristics.
- the argon gas pressure is preferably kept very close to the maximum allowed in the magnetron safe source's operation.
- pressures mean lower sputter rates and translate into longer sputter times.
- a coating of the invention has the following advantages.
- coating itself has a low electron emission, preventing secondary electron emission
- the coating is of microscopic thickness (about 1.5
- micrometers or less preferably about 0.2 to about 0.75 micrometers, most
- a low loss coating with a secondary yield coefficient of less than 1 can be provided in a relatively quick manner (on the order of approximately 10-30 minutes).
- the coating controls multipaction independently of frequency or power levels.
- a coating of the invention also allows design of the device to any geometry. The resulting devices are therefore simpler, smaller and often lighter.
- a coating of the invention is also
- a coating of the invention with its ability to prevent multipaction at various power and frequency levels provides
- the initiator of multipaction can be a random cosmic ray or other quantum event that generates
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU21320/01A AU2132001A (en) | 1999-12-03 | 2000-11-29 | Surface treatment and method for applying surface treatment to suppress secondary electron emission |
EP00984671A EP1245035B1 (en) | 1999-12-03 | 2000-11-29 | Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission |
JP2001542353A JP3854150B2 (en) | 1999-12-03 | 2000-11-29 | Fabrication of microwave devices to suppress secondary electron emission by applying yttrium-iron-garnet coating to the device surface |
DE60022681T DE60022681T2 (en) | 1999-12-03 | 2000-11-29 | PREPARATION OF A MICROWAVE DEVICE BY APPLYING A COATING OF YTTRIUM IRON GRANITE TO THE SURFACE OF THE DEVICE FOR SUPPRESSING SECONDARY ELECTRON EMISSION |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/453,653 US6179976B1 (en) | 1999-12-03 | 1999-12-03 | Surface treatment and method for applying surface treatment to suppress secondary electron emission |
US09/453,653 | 1999-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001041177A2 true WO2001041177A2 (en) | 2001-06-07 |
WO2001041177A3 WO2001041177A3 (en) | 2001-12-13 |
Family
ID=23801496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2000/001423 WO2001041177A2 (en) | 1999-12-03 | 2000-11-29 | Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission |
Country Status (6)
Country | Link |
---|---|
US (1) | US6179976B1 (en) |
EP (1) | EP1245035B1 (en) |
JP (1) | JP3854150B2 (en) |
AU (1) | AU2132001A (en) |
DE (1) | DE60022681T2 (en) |
WO (1) | WO2001041177A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100396812C (en) * | 2001-12-19 | 2008-06-25 | 日矿金属株式会社 | Method for connecting magnetic substance target to backing plate, and magnetic substance target |
US6942929B2 (en) * | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
US20230088552A1 (en) * | 2021-09-17 | 2023-03-23 | Applied Materials, Inc. | Top magnets for decreased non-uniformity in pvd |
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US3960512A (en) * | 1973-03-01 | 1976-06-01 | Varian Associates | Ferrite to metal bond for high-power microwave applications |
US4209552A (en) * | 1975-04-03 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Thin film deposition by electric and magnetic crossed-field diode sputtering |
EP0167213A2 (en) * | 1984-07-03 | 1986-01-08 | Philips Patentverwaltung GmbH | Method of producing layers of ferrimagnetic garnet substituted by bismuth |
US4626800A (en) * | 1984-06-05 | 1986-12-02 | Sony Corporation | YIG thin film tuned MIC oscillator |
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-
1999
- 1999-12-03 US US09/453,653 patent/US6179976B1/en not_active Expired - Lifetime
-
2000
- 2000-11-29 WO PCT/CA2000/001423 patent/WO2001041177A2/en active IP Right Grant
- 2000-11-29 EP EP00984671A patent/EP1245035B1/en not_active Expired - Lifetime
- 2000-11-29 AU AU21320/01A patent/AU2132001A/en not_active Abandoned
- 2000-11-29 JP JP2001542353A patent/JP3854150B2/en not_active Expired - Fee Related
- 2000-11-29 DE DE60022681T patent/DE60022681T2/en not_active Expired - Fee Related
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US3960512A (en) * | 1973-03-01 | 1976-06-01 | Varian Associates | Ferrite to metal bond for high-power microwave applications |
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Also Published As
Publication number | Publication date |
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AU2132001A (en) | 2001-06-12 |
EP1245035B1 (en) | 2005-09-14 |
US6179976B1 (en) | 2001-01-30 |
EP1245035A2 (en) | 2002-10-02 |
DE60022681D1 (en) | 2005-10-20 |
JP2003515670A (en) | 2003-05-07 |
DE60022681T2 (en) | 2006-07-06 |
JP3854150B2 (en) | 2006-12-06 |
WO2001041177A3 (en) | 2001-12-13 |
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