JPH05325780A - Manufacture of collector electrode for microwave tube - Google Patents
Manufacture of collector electrode for microwave tubeInfo
- Publication number
- JPH05325780A JPH05325780A JP12151992A JP12151992A JPH05325780A JP H05325780 A JPH05325780 A JP H05325780A JP 12151992 A JP12151992 A JP 12151992A JP 12151992 A JP12151992 A JP 12151992A JP H05325780 A JPH05325780 A JP H05325780A
- Authority
- JP
- Japan
- Prior art keywords
- collector electrode
- microwave tube
- efficiency
- coating
- secondary electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はマイクロ波管用コレクタ
電極の製造方法に関し、特に高効率が要求される進行波
管及びクライストロンに用いられるマイクロ波管用コレ
クタ電極の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a collector electrode for a microwave tube, and more particularly to a method of manufacturing a collector electrode for a microwave tube used in a traveling wave tube and a klystron that require high efficiency.
【０００２】[0002]
【従来の技術】進行波管及びクライストロン等のマイク
ロ波管は、通信からテレビ放送，レーダ，工業用加熱，
該融合等に至る広範な分野で使用されており、近年、増
々その重要性を増している。2. Description of the Related Art Traveling wave tubes and microwave tubes such as klystrons are used for communication, television broadcasting, radar, industrial heating,
It is used in a wide range of fields such as fusion, and its importance is increasing in recent years.
【０００３】特に、衛星通信分野においては、高周波，
高出力特性が要求されており、この分野での増幅器とし
て増々進行波管，クライストロン等のマイクロ波管が要
求されている。Particularly in the field of satellite communication, high frequency,
High output characteristics are required, and microwave tubes such as traveling wave tubes and klystrons are increasingly required as amplifiers in this field.
【０００４】図２（ａ），（ｂ）に示すように、進行波
管は電子銃部３，高周波回路部４及びコレクタ部５から
構成されている。As shown in FIGS. 2A and 2B, the traveling wave tube comprises an electron gun section 3, a high frequency circuit section 4 and a collector section 5.
【０００５】電子銃部３のカソード６から熱電子が放射
され、グリッド及び陽極により加速され高周波回路部４
に入射する。高周波回路部４においては、入射した電子
ビーム７と入力部８より入力した高周波信号とが相互作
用をし、この高周波信号が増幅され出力部９より取り出
される。Thermoelectrons are radiated from the cathode 6 of the electron gun unit 3 and accelerated by the grid and the anode, and the high-frequency circuit unit 4 is accelerated.
Incident on. In the high frequency circuit section 4, the incident electron beam 7 interacts with the high frequency signal input from the input section 8, and the high frequency signal is amplified and taken out from the output section 9.
【０００６】コレクタ部５で高周波信号と相互作用して
高周波信号を増幅した電子ビーム７はコレクタ電極１０
に捕獲される。この時、コレクタ電極１０の表面で２次
電子が発生し、逆行電子１１として高周波回路部４に戻
入する。このような状態においては、高周波回路部４内
の電子ビーム７の軌道が乱され出力信号の損失が生じ
る。The electron beam 7 which has interacted with the high frequency signal in the collector section 5 and amplified the high frequency signal is used as a collector electrode 10.
Captured by. At this time, secondary electrons are generated on the surface of the collector electrode 10 and return to the high-frequency circuit unit 4 as retrograde electrons 11. In such a state, the trajectory of the electron beam 7 in the high-frequency circuit unit 4 is disturbed and the output signal is lost.
【０００７】このため、従来よりコレクタ電極１０での
電子の捕獲効率を高めるためにコレクタ電極１０の表面
にグラファイト，窒化チタン及び炭化チタン等の２次電
子放出係数が１以下である物質を被覆する方法が取られ
ている。For this reason, conventionally, in order to improve the efficiency of capturing electrons in the collector electrode 10, the surface of the collector electrode 10 is coated with a substance having a secondary electron emission coefficient of 1 or less such as graphite, titanium nitride, and titanium carbide. The method is taken.
【０００８】従来の被覆方法は、例えば、グラファイト
粉末を溶媒に分散させた溶液をコレクタ電極１０の表面
に塗布する方法、あるいは、ＣＶＤ法，ＰＶＤ法にてコ
レクタ電極１０の表面にカーボン被膜，窒化チタン被膜
あるいは炭化チタン被膜を被覆する方法が公知である。The conventional coating method is, for example, a method in which a solution in which graphite powder is dispersed in a solvent is applied to the surface of the collector electrode 10, or a carbon coating or nitriding is performed on the surface of the collector electrode 10 by a CVD method or a PVD method. A method of coating a titanium coating or a titanium carbide coating is known.
【０００９】[0009]
【発明が解決しようとする課題】この従来のコレクタ電
極への被覆方法では、被膜の表面形状が滑らかであり、
２次電子防止の効果が低減され、マイクロ波管の効率を
制限してしまうという問題点があった。In this conventional method of coating the collector electrode, the surface shape of the coating is smooth,
There is a problem that the effect of preventing secondary electrons is reduced and the efficiency of the microwave tube is limited.
【００１０】特に、近年所望されている衛星搭載用のマ
イクロ波管では、搭載されるマイクロ波管の本数が制限
されるため、マイクロ波管の効率化は最も重要な課題で
あった。In particular, in the microwave tube for mounting on a satellite, which has been desired in recent years, the number of microwave tubes to be mounted is limited, so that the efficiency of the microwave tube has been the most important issue.
【００１１】本発明の目的は、２次電子防止効果が大き
く、マイクロ波管の効率の高いマイクロ波管用コレクタ
電極の製造方法を提供することにある。An object of the present invention is to provide a method of manufacturing a collector electrode for a microwave tube, which has a large effect of preventing secondary electrons and has a high efficiency of the microwave tube.
【００１２】[0012]
【課題を解決するための手段】本発明は、コレクタ電極
の表面に２次電子放出係数が１以下の物質にて被膜を形
成する工程を含むマイクロ波管用コレクタ電極の製造方
法において、前記２次電子放出係数が１以下の物質にて
前記コレクタ電極の表面にスパッタ法により前記被膜を
形成する工程と、スパッタエッチング法により該被膜表
面に凹凸面を形成する工程とを含む。The present invention provides a method for manufacturing a collector electrode for a microwave tube, which comprises the step of forming a film on the surface of the collector electrode with a material having a secondary electron emission coefficient of 1 or less. The method includes a step of forming the coating film on the surface of the collector electrode by a sputtering method using a substance having an electron emission coefficient of 1 or less, and a step of forming an uneven surface on the coating surface by a sputter etching method.
【００１３】[0013]
【作用】スパッタ法にて形成された被膜は柱状構造を有
しており、この被膜をアルゴンイオン等を用いてスパッ
タエッチングを施すと粒界が選択的にエッチングされて
凹凸状に形成され被膜の表面積が増大する。このように
して形成されたコレクタ電極では表面に凹凸状の被膜を
有するため表面積が大きくなるので、２次電子防止の効
果が大きく入射電子の捕獲効率が高くなる。The film formed by the sputtering method has a columnar structure. When this film is sputter-etched using argon ions or the like, grain boundaries are selectively etched to form unevenness. The surface area is increased. Since the collector electrode thus formed has an uneven coating on the surface, the surface area is large, so that the effect of preventing secondary electrons is large and the efficiency of trapping incident electrons is high.
【００１４】[0014]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１５】図１（ａ）〜（ｃ）は本発明の第１の実施
例の工程順に示した被膜の断面図である。 コレクタ電
極１は無酸素銅材からなり、まず、図１（ａ）に示すよ
うに、この表面上に最大２次電子放出係数が１．０であ
るグラファイトをスパッタコーティング法により厚さ５
μｍ設け被膜２を形成した。1 (a) to 1 (c) are cross-sectional views of the coating film shown in the order of steps of the first embodiment of the present invention. The collector electrode 1 is made of an oxygen-free copper material. First, as shown in FIG. 1A, graphite having a maximum secondary electron emission coefficient of 1.0 is formed on the surface of the collector electrode 1 by sputtering to a thickness of 5
A coating film 2 having a thickness of μm was formed.
【００１６】次に、図１（ｂ）に示すように、この被膜
２をアルゴンイオンを用いてスパッタエッチングを施こ
し、図１（ｃ）に示すように表面が凹凸状の被膜２を有
するコレクタ電極１を得た。この時の被膜２の突起部の
高さは約４μｍ，突起部の間隔は大旨１μｍ，凹部の深
さは約３μｍであった。Next, as shown in FIG. 1 (b), this coating film 2 is sputter-etched using argon ions, and a collector having a coating film 2 having an uneven surface as shown in FIG. 1 (c). The electrode 1 was obtained. At this time, the height of the protrusions of the coating film 2 was about 4 μm, the interval between the protrusions was 1 μm, and the depth of the recesses was about 3 μm.
【００１７】このようにして製造したコレクタ電極１を
使用して進行波管の実装評価を行なった結果、従来に比
べ約１０％効率の向上が認められた。As a result of mounting evaluation of the traveling-wave tube using the collector electrode 1 thus manufactured, an improvement in efficiency of about 10% was recognized as compared with the conventional one.
【００１８】第２の実施例は、コレクタ電極にはモリブ
デン部材を用い、まず、この表面上に最大２次電子放出
係数が０．９である窒化チタンを反応性スパッタコーテ
ィングで厚さ５μｍ設け被膜を形成した。In the second embodiment, a molybdenum member is used for the collector electrode, and titanium nitride having a maximum secondary electron emission coefficient of 0.9 is provided on the surface by reactive sputter coating to a thickness of 5 μm. Formed.
【００１９】次に、第１の実施例と同様にしてスパッタ
エッチングを施こし、表面が凹凸の被膜を有するコレク
タ電極を得た。この時の突起部の高さは約３μｍ，突起
部の間隔は大旨１μｍ，凹部の深さは約３μｍであっ
た。Next, sputter etching was carried out in the same manner as in the first embodiment to obtain a collector electrode having a film with an uneven surface. At this time, the height of the protrusions was about 3 μm, the interval between the protrusions was roughly 1 μm, and the depth of the recesses was about 3 μm.
【００２０】このコレクタ電極を使用し、第１の実施例
と同様にして実装評価を行った結果、従来に比べ約７％
の効率向上が認められた。As a result of mounting evaluation using this collector electrode in the same manner as in the first embodiment, it is about 7% as compared with the conventional one.
The efficiency improvement was confirmed.
【００２１】[0021]
【発明の効果】以上説明したように本発明は、コレクタ
電極の表面にスパッタコーティング法とスパッタエッチ
ング法とにより２次電子放出係数が１以下の物質を表面
が凹凸状になるように被膜を形成したので、このコレク
タ電極の２次電子防止効果が大きくなり、マイクロ波管
の効率を向上できる効果を有する。As described above, according to the present invention, a film having a secondary electron emission coefficient of 1 or less is formed on the surface of the collector electrode by the sputter coating method and the sputter etching method so that the surface becomes uneven. Therefore, the secondary electron preventing effect of the collector electrode becomes large, and the efficiency of the microwave tube can be improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の第１の実施例を説明する工程順に示し
た被膜の断面図である。FIG. 1 is a cross-sectional view of a coating film showing a process sequence for explaining a first embodiment of the present invention.
【図２】従来の進行波管の概略の構成を示す断面図及び
そのコレクタ部の部分拡大断面図である。FIG. 2 is a sectional view showing a schematic configuration of a conventional traveling wave tube and a partially enlarged sectional view of a collector portion thereof.
１，１０ コレクタ電極 ２ 被膜 ３ 電子銃部 ４ 高周波回路部 ５ コレクタ部 ６ カソード ７ 電子ビーム ８ 入力部 ９ 出力部 １１ 逆行電子 1, 10 collector electrode 2 film 3 electron gun part 4 high frequency circuit part 5 collector part 6 cathode 7 electron beam 8 input part 9 output part 11 retrograde electron
Claims (1)
が１以下の物質にて被膜を形成する工程を含むマイクロ
波管用コレクタ電極の製造方法において、前記２次電子
放出係数が１以下の物質にて前記コレクタ電極の表面に
スパッタ法により前記被膜を形成する工程と、スパッタ
エッチング法により該被膜表面に凹凸面を形成する工程
とを含むことを特徴とするマイクロ波管用コレクタ電極
の製造方法。1. A method of manufacturing a collector electrode for a microwave tube, comprising the step of forming a film on the surface of the collector electrode with a material having a secondary electron emission coefficient of 1 or less, wherein the material having a secondary electron emission coefficient of 1 or less. 2. A method of manufacturing a collector electrode for a microwave tube, comprising: a step of forming the coating film on the surface of the collector electrode by a sputtering method; and a step of forming an uneven surface on the surface of the coating film by a sputter etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12151992A JPH05325780A (en) | 1992-05-14 | 1992-05-14 | Manufacture of collector electrode for microwave tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12151992A JPH05325780A (en) | 1992-05-14 | 1992-05-14 | Manufacture of collector electrode for microwave tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05325780A true JPH05325780A (en) | 1993-12-10 |
Family
ID=14813232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12151992A Withdrawn JPH05325780A (en) | 1992-05-14 | 1992-05-14 | Manufacture of collector electrode for microwave tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05325780A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041177A3 (en) * | 1999-12-03 | 2001-12-13 | Com Dev Ltd | Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission |
| JP2018524182A (en) * | 2015-06-24 | 2018-08-30 | ユニバーシティー オブ ダンディーＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｄｕｎｄｅｅ | Method and apparatus for reducing photoelectron yield and / or secondary electron yield |
| JP2019508256A (en) * | 2016-03-08 | 2019-03-28 | ユニバーシティー オブ ダンディーＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｄｕｎｄｅｅ | Method of reducing photoelectron yield and / or secondary electron yield on ceramic surfaces and corresponding devices and products |
-
1992
- 1992-05-14 JP JP12151992A patent/JPH05325780A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041177A3 (en) * | 1999-12-03 | 2001-12-13 | Com Dev Ltd | Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission |
| JP2018524182A (en) * | 2015-06-24 | 2018-08-30 | ユニバーシティー オブ ダンディーＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｄｕｎｄｅｅ | Method and apparatus for reducing photoelectron yield and / or secondary electron yield |
| JP2019508256A (en) * | 2016-03-08 | 2019-03-28 | ユニバーシティー オブ ダンディーＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｄｕｎｄｅｅ | Method of reducing photoelectron yield and / or secondary electron yield on ceramic surfaces and corresponding devices and products |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990803 |