JPH05325780A - Manufacture of collector electrode for microwave tube - Google Patents

Manufacture of collector electrode for microwave tube

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Publication number
JPH05325780A
JPH05325780A JP12151992A JP12151992A JPH05325780A JP H05325780 A JPH05325780 A JP H05325780A JP 12151992 A JP12151992 A JP 12151992A JP 12151992 A JP12151992 A JP 12151992A JP H05325780 A JPH05325780 A JP H05325780A
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JP
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Patent type
Prior art keywords
collector electrode
microwave tube
surface
film
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP12151992A
Other languages
Japanese (ja)
Inventor
Toshihiro Kabei
敏広 壁井
Original Assignee
Nec Corp
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To improve the secondary electron preventing effect of a collector electrode for improving the efficiency of a microwave tube.
CONSTITUTION: A material having the secondary electron emission coefficient of 1 or below is coated on the surface of a collector electrode 1 by spatter coating and spatter etching to form an irregular film 2. The electron trapping efficiency of the collector electrode 1 is improved, and the efficiency of a microwave tube can be improved.
COPYRIGHT: (C)1993,JPO&Japio

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明はマイクロ波管用コレクタ電極の製造方法に関し、特に高効率が要求される進行波管及びクライストロンに用いられるマイクロ波管用コレクタ電極の製造方法に関する。 The present invention relates relates to a method of manufacturing a collector electrode for microwave tube, a method of manufacturing a microwave tube collector electrode for the use in traveling-wave tube and klystron particularly high efficiency is required.

【0002】 [0002]

【従来の技術】進行波管及びクライストロン等のマイクロ波管は、通信からテレビ放送,レーダ,工業用加熱, BACKGROUND OF THE INVENTION traveling-wave tubes and microwave tube such as a klystron, TV broadcast from communication, radar, industrial heating,
該融合等に至る広範な分野で使用されており、近年、増々その重要性を増している。 Are used in a wide variety of fields ranging in the fusion or the like, in recent years, it is gaining increasingly important.

【0003】特に、衛星通信分野においては、高周波, [0003] In particular, in the field of satellite communications, high-frequency,
高出力特性が要求されており、この分野での増幅器として増々進行波管,クライストロン等のマイクロ波管が要求されている。 It is high output characteristics required increasingly traveling wave tube, microwave tube klystron and the like are required as an amplifier in the field.

【0004】図2(a),(b)に示すように、進行波管は電子銃部3,高周波回路部4及びコレクタ部5から構成されている。 [0004] FIG. 2 (a), the (b), the traveling wave tube is constructed from an electron gun unit 3, high-frequency circuit section 4 and the collector portion 5.

【0005】電子銃部3のカソード6から熱電子が放射され、グリッド及び陽極により加速され高周波回路部4 [0005] Thermal electrons emitted from the cathode 6 of the electron gun portion 3, the high-frequency circuit portion 4 are accelerated by the grid and the anode
に入射する。 Incident on. 高周波回路部4においては、入射した電子ビーム7と入力部8より入力した高周波信号とが相互作用をし、この高周波信号が増幅され出力部9より取り出される。 In the high frequency circuit unit 4, and the high-frequency signal input from the input unit 8 and the electron beam 7 is incident is an interaction, the high-frequency signal is amplified taken out from the output unit 9.

【0006】コレクタ部5で高周波信号と相互作用して高周波信号を増幅した電子ビーム7はコレクタ電極10 [0006] electron beam 7 obtained by amplifying the high-frequency signal interact with the high-frequency signal at the collector section 5 the collector electrode 10
に捕獲される。 They are trapped in. この時、コレクタ電極10の表面で2次電子が発生し、逆行電子11として高周波回路部4に戻入する。 At this time, secondary electrons at the surface of the collector electrode 10 is generated, and reversal to the high-frequency circuit section 4 as retrograde electrons 11. このような状態においては、高周波回路部4内の電子ビーム7の軌道が乱され出力信号の損失が生じる。 In such state, the loss of the trajectory of the electron beam 7 in the high-frequency circuit portion 4 is disturbed output signals.

【0007】このため、従来よりコレクタ電極10での電子の捕獲効率を高めるためにコレクタ電極10の表面にグラファイト,窒化チタン及び炭化チタン等の2次電子放出係数が1以下である物質を被覆する方法が取られている。 [0007] Therefore, the graphite on the surface of the collector electrode 10 in order to increase the electron capture efficiency at the collector electrode 10 conventionally, the secondary electron emission coefficient, such as titanium nitride and titanium carbide covers the material is 1 or less methods have been taken.

【0008】従来の被覆方法は、例えば、グラファイト粉末を溶媒に分散させた溶液をコレクタ電極10の表面に塗布する方法、あるいは、CVD法,PVD法にてコレクタ電極10の表面にカーボン被膜,窒化チタン被膜あるいは炭化チタン被膜を被覆する方法が公知である。 [0008] Conventional coating methods, for example, a method for applying a solution obtained by dispersing graphite powder in a solvent to the surface of the collector electrode 10 or,, CVD method, carbon coating on the surface of the collector electrode 10 by the PVD method, nitride method of coating a titanium film or a titanium carbide coating is known.

【0009】 [0009]

【発明が解決しようとする課題】この従来のコレクタ電極への被覆方法では、被膜の表面形状が滑らかであり、 [Problems that the Invention is to Solve] In the coating method to this conventional collector electrode, a smooth surface shape of the film,
2次電子防止の効果が低減され、マイクロ波管の効率を制限してしまうという問題点があった。 Effect of secondary electrons prevention is reduced, there is a problem that limits the efficiency of the microwave tube.

【0010】特に、近年所望されている衛星搭載用のマイクロ波管では、搭載されるマイクロ波管の本数が制限されるため、マイクロ波管の効率化は最も重要な課題であった。 [0010] Particularly, in recent years microwave tube for desired it has been that satellite, since the number of microwave tube to be mounted is limited, the efficiency of microwave tube was the most important issue.

【0011】本発明の目的は、2次電子防止効果が大きく、マイクロ波管の効率の高いマイクロ波管用コレクタ電極の製造方法を提供することにある。 An object of the present invention is that the secondary electron preventing effect is large, to provide a method of manufacturing a high microwave tube collector electrode for the efficiency of the microwave tube.

【0012】 [0012]

【課題を解決するための手段】本発明は、コレクタ電極の表面に2次電子放出係数が1以下の物質にて被膜を形成する工程を含むマイクロ波管用コレクタ電極の製造方法において、前記2次電子放出係数が1以下の物質にて前記コレクタ電極の表面にスパッタ法により前記被膜を形成する工程と、スパッタエッチング法により該被膜表面に凹凸面を形成する工程とを含む。 The present invention SUMMARY OF] is the manufacturing method of the collector electrode for microwave tube comprising a step of secondary electron emission coefficient on the surface of the collector electrode to form a film at 1 the following materials, the secondary and forming the film by sputtering on the surface of the collector electrode electron emission coefficient at 1 following materials by a sputtering etching method and forming an uneven surface on the coating film surface.

【0013】 [0013]

【作用】スパッタ法にて形成された被膜は柱状構造を有しており、この被膜をアルゴンイオン等を用いてスパッタエッチングを施すと粒界が選択的にエッチングされて凹凸状に形成され被膜の表面積が増大する。 [Action] film formed by the sputtering method has a columnar structure, when subjected to sputter etching grain boundaries selectively formed by etching the uneven coating of the coating with argon ions or the like surface area is increased. このようにして形成されたコレクタ電極では表面に凹凸状の被膜を有するため表面積が大きくなるので、2次電子防止の効果が大きく入射電子の捕獲効率が高くなる。 The surface area since it has an uneven coating this way the surface is the collector electrode which is formed is increased, the effect of the secondary electrons prevents capture efficiency of the incident electron increases significantly.

【0014】 [0014]

【実施例】次に、本発明の実施例について図面を参照して説明する。 EXAMPLES will be described with reference to the accompanying drawings embodiments of the present invention.

【0015】図1(a)〜(c)は本発明の第1の実施例の工程順に示した被膜の断面図である。 [0015] Figure 1 (a) ~ (c) is a cross-sectional view of the film shown in the order of steps of the first embodiment of the present invention. コレクタ電極1は無酸素銅材からなり、まず、図1(a)に示すように、この表面上に最大2次電子放出係数が1.0であるグラファイトをスパッタコーティング法により厚さ5 Collector electrode 1 is made of oxygen-free copper material, first, FIG. 1 (a), a thickness of 5 to graphite maximum secondary electron emission coefficient of 1.0 by sputter coating method on the surface
μm設け被膜2を形成した。 μm provided to form a coating film 2.

【0016】次に、図1(b)に示すように、この被膜2をアルゴンイオンを用いてスパッタエッチングを施こし、図1(c)に示すように表面が凹凸状の被膜2を有するコレクタ電極1を得た。 [0016] Next, as shown in FIG. 1 (b), collector this coating 2 sputter etching facilities stiffness using argon ions, with a coating 2 surface uneven as shown in FIG. 1 (c) to obtain an electrode 1. この時の被膜2の突起部の高さは約4μm,突起部の間隔は大旨1μm,凹部の深さは約3μmであった。 A height of approximately 4μm protrusions of the film 2 at this time, spacing of the protrusions Daimune 1 [mu] m, the depth of the recess was about 3 [mu] m.

【0017】このようにして製造したコレクタ電極1を使用して進行波管の実装評価を行なった結果、従来に比べ約10%効率の向上が認められた。 [0017] Thus the results of performing the mounting evaluation of TWT using a collector electrode 1 manufactured, improvement of about 10% efficient than conventional was observed.

【0018】第2の実施例は、コレクタ電極にはモリブデン部材を用い、まず、この表面上に最大2次電子放出係数が0.9である窒化チタンを反応性スパッタコーティングで厚さ5μm設け被膜を形成した。 [0018] The second embodiment uses a molybdenum member to the collector electrode, first, the coating provided 5μm thickness by reactive sputter coating a titanium nitride maximum secondary electron emission coefficient of 0.9 on the surface It was formed.

【0019】次に、第1の実施例と同様にしてスパッタエッチングを施こし、表面が凹凸の被膜を有するコレクタ電極を得た。 Next, sputter etching facilities strainer as in the first embodiment, to obtain surface collector electrode having an uneven coating. この時の突起部の高さは約3μm,突起部の間隔は大旨1μm,凹部の深さは約3μmであった。 Height of about 3 [mu] m of the protruding portion when the spacing protrusions Daimune 1 [mu] m, the depth of the recess was about 3 [mu] m.

【0020】このコレクタ電極を使用し、第1の実施例と同様にして実装評価を行った結果、従来に比べ約7% [0020] Using this collector electrode, as a result of implementation evaluated in the same manner as in the first embodiment, from about 7% compared with the conventional
の効率向上が認められた。 Improvement of efficiency was observed.

【0021】 [0021]

【発明の効果】以上説明したように本発明は、コレクタ電極の表面にスパッタコーティング法とスパッタエッチング法とにより2次電子放出係数が1以下の物質を表面が凹凸状になるように被膜を形成したので、このコレクタ電極の2次電子防止効果が大きくなり、マイクロ波管の効率を向上できる効果を有する。 The present invention described above, according to the present invention may form a film as the secondary electron emission coefficient by a sputter coating method and sputter etching process on the surface of the collector electrode surface 1 following materials becomes uneven since the secondary electron preventing effect of the collector electrode is increased, an effect capable of improving the efficiency of the microwave tube.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1の実施例を説明する工程順に示した被膜の断面図である。 1 is a cross-sectional view of the film shown in step order for explaining a first embodiment of the present invention.

【図2】従来の進行波管の概略の構成を示す断面図及びそのコレクタ部の部分拡大断面図である。 2 is a cross-sectional view and a partially enlarged cross-sectional view of the collector portion showing a schematic configuration of a conventional traveling-wave tube.

【符号の説明】 DESCRIPTION OF SYMBOLS

1,10 コレクタ電極 2 被膜 3 電子銃部 4 高周波回路部 5 コレクタ部 6 カソード 7 電子ビーム 8 入力部 9 出力部 11 逆行電子 1,10 collector electrode 2 film 3 electron gun portion 4 high frequency circuit 5 collector 6 cathode 7 electron beam 8 input unit 9 output unit 11 reverses the electronic

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 コレクタ電極の表面に2次電子放出係数が1以下の物質にて被膜を形成する工程を含むマイクロ波管用コレクタ電極の製造方法において、前記2次電子放出係数が1以下の物質にて前記コレクタ電極の表面にスパッタ法により前記被膜を形成する工程と、スパッタエッチング法により該被膜表面に凹凸面を形成する工程とを含むことを特徴とするマイクロ波管用コレクタ電極の製造方法。 1. A method of manufacturing a collector electrode for microwave tube comprising a step of secondary electron emission coefficient on the surface of the collector electrode to form a film at 1 the following materials, the coefficient of secondary electron emission of less than 1 material process and method for producing a collector electrode for microwave tube, characterized in that it comprises a step of forming an uneven surface on the coating film surface by sputter etching method for forming the film by sputtering on the surface of the collector electrode at.
JP12151992A 1992-05-14 1992-05-14 Manufacture of collector electrode for microwave tube Withdrawn JPH05325780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12151992A JPH05325780A (en) 1992-05-14 1992-05-14 Manufacture of collector electrode for microwave tube

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Application Number Priority Date Filing Date Title
JP12151992A JPH05325780A (en) 1992-05-14 1992-05-14 Manufacture of collector electrode for microwave tube

Publications (1)

Publication Number Publication Date
JPH05325780A true true JPH05325780A (en) 1993-12-10

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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041177A3 (en) * 1999-12-03 2001-12-13 Com Dev Ltd Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041177A3 (en) * 1999-12-03 2001-12-13 Com Dev Ltd Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission

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A300 Withdrawal of application because of no request for examination

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Effective date: 19990803