WO2001038597A3 - Verfahren zur regelung von sputterprozessen - Google Patents
Verfahren zur regelung von sputterprozessen Download PDFInfo
- Publication number
- WO2001038597A3 WO2001038597A3 PCT/EP2000/010782 EP0010782W WO0138597A3 WO 2001038597 A3 WO2001038597 A3 WO 2001038597A3 EP 0010782 W EP0010782 W EP 0010782W WO 0138597 A3 WO0138597 A3 WO 0138597A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sputtering processes
- regulating sputtering
- analysis
- regulating
- frequency
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT00977458T ATE240423T1 (de) | 1999-11-25 | 2000-11-02 | Verfahren zur regelung von sputterprozessen |
EP00977458A EP1232293B1 (de) | 1999-11-25 | 2000-11-02 | Verfahren zur regelung von sputterprozessen |
DE50002220T DE50002220D1 (de) | 1999-11-25 | 2000-11-02 | Verfahren zur regelung von sputterprozessen |
US10/148,099 US6797128B1 (en) | 1999-11-25 | 2000-11-02 | Method for regulating sputtering processes |
JP2001539934A JP2003516472A (ja) | 1999-11-25 | 2000-11-02 | スパッタプロセスの調整方法 |
KR1020027006719A KR20020069194A (ko) | 1999-11-25 | 2000-11-02 | 스퍼터링 프로세스를 조정하는 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19956733.6 | 1999-11-25 | ||
DE19956733A DE19956733A1 (de) | 1999-11-25 | 1999-11-25 | Verfahren zur Regelung von Sputterprozessen |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001038597A2 WO2001038597A2 (de) | 2001-05-31 |
WO2001038597A3 true WO2001038597A3 (de) | 2001-10-25 |
Family
ID=7930287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/010782 WO2001038597A2 (de) | 1999-11-25 | 2000-11-02 | Verfahren zur regelung von sputterprozessen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6797128B1 (de) |
EP (1) | EP1232293B1 (de) |
JP (1) | JP2003516472A (de) |
KR (1) | KR20020069194A (de) |
AT (1) | ATE240423T1 (de) |
DE (2) | DE19956733A1 (de) |
WO (1) | WO2001038597A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1681367A4 (de) * | 2003-05-26 | 2008-08-27 | Shinmaywa Ind Ltd | Fimbildungsvorrichtung und filmbildungsverfahren |
DE10359508B4 (de) | 2003-12-18 | 2007-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Magnetronsputtern |
US8500965B2 (en) * | 2004-05-06 | 2013-08-06 | Ppg Industries Ohio, Inc. | MSVD coating process |
DE102006061324B4 (de) * | 2006-06-20 | 2008-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Regelung eines reaktiven Hochleistungs-Puls-Magnetronsputterprozesses und Vorrichtung hierzu |
JP5256475B2 (ja) * | 2011-02-10 | 2013-08-07 | 株式会社ユーテック | 対向ターゲット式スパッタ装置及び対向ターゲット式スパッタ方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0501016A1 (de) * | 1991-03-01 | 1992-09-02 | Leybold Aktiengesellschaft | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung für die Durchführung des Verfahrens |
US5939886A (en) * | 1994-10-24 | 1999-08-17 | Advanced Energy Industries, Inc. | Plasma monitoring and control method and system |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ZA884511B (en) * | 1987-07-15 | 1989-03-29 | Boc Group Inc | Method of plasma enhanced silicon oxide deposition |
ATE144004T1 (de) | 1991-04-12 | 1996-10-15 | Balzers Hochvakuum | Verfahren und anlage zur beschichtung mindestens eines gegenstandes |
FR2699934B1 (fr) | 1992-12-30 | 1995-03-17 | Lorraine Inst Nat Polytech | Procédé de contrôle de la concentration en métalloïde d'un dépôt réalisés par voie physique en phase vapeur réactive à l'aide d'un plasma froid de pulvérisation. |
CH686747A5 (de) | 1993-04-01 | 1996-06-14 | Balzers Hochvakuum | Optisches Schichtmaterial. |
DE19537212A1 (de) | 1994-10-06 | 1996-04-11 | Leybold Ag | Vorrichtung zum Beschichten von Substraten im Vakuum |
DE19506515C1 (de) | 1995-02-24 | 1996-03-07 | Fraunhofer Ges Forschung | Verfahren zur reaktiven Beschichtung |
DE19605932A1 (de) * | 1996-02-17 | 1997-08-21 | Leybold Systems Gmbh | Verfahren zum Ablagern einer optisch transparenten und elektrisch leitenden Schicht auf einem Substrat aus durchscheinendem Werkstoff |
DE19609970A1 (de) * | 1996-03-14 | 1997-09-18 | Leybold Systems Gmbh | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
US5770922A (en) | 1996-07-22 | 1998-06-23 | Eni Technologies, Inc. | Baseband V-I probe |
US6351683B1 (en) * | 1997-09-17 | 2002-02-26 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
DE19800758C2 (de) * | 1998-01-12 | 2000-08-31 | Fraunhofer Ges Forschung | Verfahren zum Beschichten von Folie aus Nickel oder einer Nickellegierung und beschichtete Folie aus Nickel oder einer Nickellegierung |
-
1999
- 1999-11-25 DE DE19956733A patent/DE19956733A1/de not_active Ceased
-
2000
- 2000-11-02 WO PCT/EP2000/010782 patent/WO2001038597A2/de active IP Right Grant
- 2000-11-02 DE DE50002220T patent/DE50002220D1/de not_active Expired - Lifetime
- 2000-11-02 KR KR1020027006719A patent/KR20020069194A/ko not_active Application Discontinuation
- 2000-11-02 US US10/148,099 patent/US6797128B1/en not_active Expired - Fee Related
- 2000-11-02 AT AT00977458T patent/ATE240423T1/de not_active IP Right Cessation
- 2000-11-02 JP JP2001539934A patent/JP2003516472A/ja active Pending
- 2000-11-02 EP EP00977458A patent/EP1232293B1/de not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0501016A1 (de) * | 1991-03-01 | 1992-09-02 | Leybold Aktiengesellschaft | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung für die Durchführung des Verfahrens |
US5939886A (en) * | 1994-10-24 | 1999-08-17 | Advanced Energy Industries, Inc. | Plasma monitoring and control method and system |
Non-Patent Citations (1)
Title |
---|
SOBOLEWSKI M A ET AL: "Electrical measurements for monitoring and control of RF plasma processing", ADVANCED TECHNIQUES FOR INTEGRATED CIRCUIT PROCESSING II, SAN JOSE, CA, USA, 21-23 SEPT. 1992, vol. 1803, Proceedings of the SPIE - The International Society for Optical Engineering, 1993, USA, pages 309 - 320, XP000987027, ISSN: 0277-786X * |
Also Published As
Publication number | Publication date |
---|---|
EP1232293A2 (de) | 2002-08-21 |
US6797128B1 (en) | 2004-09-28 |
DE19956733A1 (de) | 2001-06-28 |
JP2003516472A (ja) | 2003-05-13 |
WO2001038597A2 (de) | 2001-05-31 |
KR20020069194A (ko) | 2002-08-29 |
ATE240423T1 (de) | 2003-05-15 |
EP1232293B1 (de) | 2003-05-14 |
DE50002220D1 (de) | 2003-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1170777A3 (de) | Mehrzweckbehandlungskammer mit ausnehmbarer Kammerauskleidung | |
EP0840349A3 (de) | RF Abstimmungsverfahren für RF Plasmareaktor mittels eine Frequenzservosteuerung der Leistung, Spannung, Strom oder di/dt | |
AU2002313528A1 (en) | Method for the liquefaction and denitrogenation of natural gas, system for carrying out said method | |
WO2004030015A3 (en) | Method and apparatus for an improved baffle plate in a plasma processing system | |
CA2377253A1 (en) | Sterilization system employing a switching module adapted to pulsate the low frequency power applied to a plasma | |
AU4856299A (en) | Electrode for plasma processes and method for manufacture and use thereof | |
AU2003290932A1 (en) | Method, system and medium for controlling manufacture process having multivariate input parameters | |
EP1564794A4 (de) | Verfahren und system zur uniformierung von hochfrequenzplasma über einen grösseren bereich in einem plasma-cvd-system | |
WO2002071438A3 (en) | Capillary discharge plasma apparatus and method for surface treatment using the same | |
WO2002016927A3 (en) | Sample introduction interface for analytical processing | |
EP1101831A4 (de) | Kompositmaterial auf titanbasis, verfahren zu dessen herstellung und motorventil | |
WO2005104186A3 (en) | Method and processing system for plasma-enhanced cleaning of system components | |
EP1180429A3 (de) | Anlage zur Plasmabeschichtung von Linsen | |
EP0880163A3 (de) | Plasmabearbeitungs-Verfahren und -Gerät | |
WO2001093999A3 (en) | Electrocatalyst powders, methods for producing powders and devices fabricated from same | |
AU6634900A (en) | Method for reducing the amount of perfluorocompound gas contained in exhaust emissions from plasma processing | |
WO2001078101A3 (en) | Method and apparatus for plasma processing | |
WO2001038597A3 (de) | Verfahren zur regelung von sputterprozessen | |
WO1999030127A3 (de) | Verfahren zur überwachung von bearbeitungsanlagen | |
TW353200B (en) | Plasma processing method | |
WO2002075801A3 (en) | Method of fabricating oxides with low defect densities | |
CA2398194A1 (en) | Method for plasma jet welding | |
EP1000619A3 (de) | Verfahren zur Behandlung von Glaukoma | |
TW370569B (en) | Method for depositing golden titanium nitride | |
AU2002229382A1 (en) | Welding device, welding system and method for controlling and/or regulating the quantity of gas to be supplied to a welding process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 539934 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027006719 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2000977458 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10148099 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2000977458 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027006719 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 2000977458 Country of ref document: EP |