WO2001034310A1 - Process for the non-galvanic tin plating of copper or copper alloys - Google Patents

Process for the non-galvanic tin plating of copper or copper alloys Download PDF

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Publication number
WO2001034310A1
WO2001034310A1 PCT/US2000/030983 US0030983W WO0134310A1 WO 2001034310 A1 WO2001034310 A1 WO 2001034310A1 US 0030983 W US0030983 W US 0030983W WO 0134310 A1 WO0134310 A1 WO 0134310A1
Authority
WO
WIPO (PCT)
Prior art keywords
tin
copper
thiourea
accordance
precipitation
Prior art date
Application number
PCT/US2000/030983
Other languages
French (fr)
Inventor
Jane Bell
Joachim Heyer
Jurgen Hupe
Ingo Kalker
Marlies Kleinfeld
Original Assignee
Enthone Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7928903&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2001034310(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Enthone Inc. filed Critical Enthone Inc.
Priority to DE60044943T priority Critical patent/DE60044943D1/en
Priority to JP2001536299A priority patent/JP4084569B2/en
Priority to US10/129,998 priority patent/US6821323B1/en
Priority to EP00978519A priority patent/EP1230034B1/en
Priority to AT00978519T priority patent/ATE480340T1/en
Priority to AU15975/01A priority patent/AU1597501A/en
Publication of WO2001034310A1 publication Critical patent/WO2001034310A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48Coating with alloys

Definitions

  • a tin bath is suggested for the formation of a tin layer by chemical precipitation, which contains at least one foreign metal.
  • the addition of foreign metals to the tin bath achieves an advantageous suppression of the diffusion processes, and thus a diffusion barrier is built which prevents the liberation of metals from the base material to a large extent.
  • the advantages thus gained are good soldering characteristics at the surface and good durability of the tin layer.
  • a diffusion-stable tin layer is produced which prevents the liberation of materials from the base layer to a large extent. This is an advantage especially in view of the copper liberation from potable water carrying copper tubing. However, an out-diffusion of lead and zinc from basic brass materials is prevented by a diffusion-stable tin layer.
  • a metal of the group silver, bismuth, nickel, titanium, zirconium and indium is suggested as the foreign metal, whereby the use of indium has shown to be especially effective.
  • the foreign metal for the formation of a diffusion barrier within the tin layer, at least one of the above metals is added to the tin bath as a foreign metal.
  • thiourea and/or its derivative is used as the complexing agent.
  • Thiourea as the complexing agent enables the liberation of positively charged copper ions.
  • a copper thiourea complex forms which is soluble in electrolytes at a temperature of >28°C.
  • As a result of the complexing of the copper its potential compared to that of tin is reduced.
  • the then more noble tin precipitates, forming a layer of tin on the copper.
  • the liberated copper ions concentrate in the electrolyte, whereby at a 3 copper concentration above 7 g/1 economical working is no longer possible since at these concentrations tin is no longer precipitated at satisfactory rates.
  • a tin bath which preferably contains the following components:
  • a source of tin preferably a bivalent tin salt, for example tin methanesulfonate, with 1 to 30 g/1 of tin in the tin bath;
  • An acid preferably methanesulphomc acid with 5 to 200 g/1 in the tin bath, whereby the tin bath assumes a pH value of 0 to 3 ;
  • a complexing agent preferably thiourea or a derivative in quantities of 10 to 200 g/1;
  • a wetting agent in quantities of 1 to 10 g/1; 5. At least one foreign metal, preferably a metal in the group Ag, Bi, Ni, Ti, Zr and In in a proportion of
  • a working temperature of the tin bath of 35 to 80°C is suggested.
  • already known measures common to the state of the art can be taken when using the process described. This includes, for example, rinsing, pickling and drying of the work pieces.
  • the process described by the invention makes it possible to produce diffusion-stable tin layers by means of chemical precipitation, whereby the diffusion barrier generated by the addition of foreign metals prevents the liberation of metals from the base materials in an advantageous manner.
  • thiourea as complexing agent it becomes possible to remove the 5 copper ions liberated from the copper from the electrolyte by filtration, and thus to achieve a substantially extended useful life. Furthermore, in this manner a substantial acceleration of the process is achieved.

Abstract

The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the tin layer.

Description

2
In order to avoid the above disadvantages it is the purpose of the invention to devise a process for the non-galvanic tin plating of copper or copper alloys by which a durable tin layer which can easily be soldered can be produced which, at the same time, prevents the liberation of the basic material. As a solution it is proposed by the invention that at least one foreign metal is added to the electrolyte to form a diffusion barrier in the tin layer.
With the process described in the invention, a tin bath is suggested for the formation of a tin layer by chemical precipitation, which contains at least one foreign metal. The addition of foreign metals to the tin bath achieves an advantageous suppression of the diffusion processes, and thus a diffusion barrier is built which prevents the liberation of metals from the base material to a large extent. The advantages thus gained are good soldering characteristics at the surface and good durability of the tin layer.
The formation of a tin layer by the above process therefore not only creates the possibility to produce effective corrosion protection but, moreover, by the use of foreign metals a diffusion-stable tin layer is produced which prevents the liberation of materials from the base layer to a large extent. This is an advantage especially in view of the copper liberation from potable water carrying copper tubing. However, an out-diffusion of lead and zinc from basic brass materials is prevented by a diffusion-stable tin layer.
In accordance with one feature of the invention, a metal of the group silver, bismuth, nickel, titanium, zirconium and indium is suggested as the foreign metal, whereby the use of indium has shown to be especially effective. For the formation of a diffusion barrier within the tin layer, at least one of the above metals is added to the tin bath as a foreign metal.
In accordance with an additional feature of the invention, thiourea and/or its derivative is used as the complexing agent. Thiourea as the complexing agent enables the liberation of positively charged copper ions. A copper thiourea complex forms which is soluble in electrolytes at a temperature of >28°C. As a result of the complexing of the copper, its potential compared to that of tin is reduced. The then more noble tin precipitates, forming a layer of tin on the copper. The liberated copper ions concentrate in the electrolyte, whereby at a 3 copper concentration above 7 g/1 economical working is no longer possible since at these concentrations tin is no longer precipitated at satisfactory rates. It is therefore suggested to remove the copper by precipitation of the copper-thiourea compounds in solution in the electrolyte. In this manner, a substantial increase in the useful life of the tin bath may be achieved. The precipitation of the copper- thiourea compounds can be achieved by means of another feature of the invention by filtration.
For the application of the non-galvanic precipitation of diffusion-stable tin layers in accordance with the invention a tin bath is of advantage, which preferably contains the following components:
1. A source of tin, preferably a bivalent tin salt, for example tin methanesulfonate, with 1 to 30 g/1 of tin in the tin bath;
2. An acid, preferably methanesulphomc acid with 5 to 200 g/1 in the tin bath, whereby the tin bath assumes a pH value of 0 to 3 ;
3. A complexing agent, preferably thiourea or a derivative in quantities of 10 to 200 g/1;
4. A wetting agent in quantities of 1 to 10 g/1; 5. At least one foreign metal, preferably a metal in the group Ag, Bi, Ni, Ti, Zr and In in a proportion of
1 to 500 mg/1 in the tin bath.
To apply the process described in the invention, a working temperature of the tin bath of 35 to 80°C is suggested. In addition, already known measures common to the state of the art can be taken when using the process described. This includes, for example, rinsing, pickling and drying of the work pieces.
Further details regarding the invention follow from the examples below in each of which an electrolyte composition is suggested. Example 1
Thiourea 100 g/1
Methanesulphomc acid 100 g/1
Tin methanesulphonate 5 g/1 tin
Wetting agent 5 g/1
Bismuth 30 mg/1
Example 2
Thiourea 100 g/1
Methanesulphomc acid 100 g/1
Tin methanesulphonate 15 g/1 tin
Wetting agent 3 g/1
Antioxidant 5 g/1
Titanium 5 mg/1
Example 3
Thiourea 120 g/1
Methanesulphonic acid 140 g/1
Tin methanesulphonate 15 g/1 tin
Wetting agent 5 g/1
Antioxidant 5 g/1
Indium 50 mg/1
The process described by the invention makes it possible to produce diffusion-stable tin layers by means of chemical precipitation, whereby the diffusion barrier generated by the addition of foreign metals prevents the liberation of metals from the base materials in an advantageous manner. In addition, by using thiourea as complexing agent it becomes possible to remove the 5 copper ions liberated from the copper from the electrolyte by filtration, and thus to achieve a substantially extended useful life. Furthermore, in this manner a substantial acceleration of the process is achieved.

Claims

Claims
1. Process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent, characterized by the electrolyte having at least one foreign metal added in order to build a diffusion barrier in the tin layer.
2. A process in accordance with claim 1, characterized by a metal of the group Ag, Bi, Ni, Ti, Zr and In being used as the foreign metal.
3. A process in accordance with claims 1 and 2, characterized by thiourea and/or its derivative being used as a complexing agent.
4. A process in accordance with one of the preceding claims, characterized by the electrolytes being reconditioned by having the copper in solution removed through precipitation of the copper-thiourea compound.
5. A process in accordance with claim 4, characterized by the copper- thiourea compound being filtered out.
PCT/US2000/030983 1999-11-12 2000-11-09 Process for the non-galvanic tin plating of copper or copper alloys WO2001034310A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE60044943T DE60044943D1 (en) 1999-11-12 2000-11-09 METHOD FOR THE ELECTRICIZING OF COPPER OR COPPER ALLOY
JP2001536299A JP4084569B2 (en) 1999-11-12 2000-11-09 Non-electric tin plating method for copper or copper alloy
US10/129,998 US6821323B1 (en) 1999-11-12 2000-11-09 Process for the non-galvanic tin plating of copper or copper alloys
EP00978519A EP1230034B1 (en) 1999-11-12 2000-11-09 Process for the non-galvanic tin plating of copper or copper alloys
AT00978519T ATE480340T1 (en) 1999-11-12 2000-11-09 METHOD FOR ELECTROLESS TINNING OF COPPER OR COPPER ALLOYS
AU15975/01A AU1597501A (en) 1999-11-12 2000-11-09 Process for the non-galvanic tin plating of copper or copper alloys

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19954613.4 1999-11-12
DE19954613A DE19954613A1 (en) 1999-11-12 1999-11-12 Process for electroless tinning of copper or copper alloys

Publications (1)

Publication Number Publication Date
WO2001034310A1 true WO2001034310A1 (en) 2001-05-17

Family

ID=7928903

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/030983 WO2001034310A1 (en) 1999-11-12 2000-11-09 Process for the non-galvanic tin plating of copper or copper alloys

Country Status (7)

Country Link
EP (1) EP1230034B1 (en)
JP (1) JP4084569B2 (en)
CN (1) CN1192125C (en)
AT (1) ATE480340T1 (en)
AU (1) AU1597501A (en)
DE (2) DE19954613A1 (en)
WO (1) WO2001034310A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010031181A1 (en) 2010-07-09 2012-01-12 Atotech Deutschland Gmbh Method and arrangement for depositing a metal layer
EP2882420A4 (en) * 2012-08-13 2016-06-01 Teni Boulikas Improved methods for treating cancer with reduced renal toxicity

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4998704B2 (en) 2007-01-22 2012-08-15 上村工業株式会社 Method for forming substituted tin alloy plating film, substituted tin alloy plating bath, and method for maintaining plating performance
US9175400B2 (en) * 2009-10-28 2015-11-03 Enthone Inc. Immersion tin silver plating in electronics manufacture
JP5830242B2 (en) * 2010-12-28 2015-12-09 ローム・アンド・ハース電子材料株式会社 Method for removing impurities from plating solution
JP5715411B2 (en) * 2010-12-28 2015-05-07 ローム・アンド・ハース電子材料株式会社 Method for removing impurities from plating solution
JP5937320B2 (en) * 2011-09-14 2016-06-22 ローム・アンド・ハース電子材料株式会社 Method for removing impurities from plating solution

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160422A (en) * 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys
US5217751A (en) * 1991-11-27 1993-06-08 Mcgean-Rohco, Inc. Stabilized spray displacement plating process
US5266103A (en) * 1991-07-04 1993-11-30 C. Uyemura & Co., Ltd. Bath and method for the electroless plating of tin and tin-lead alloy
EP0715003A1 (en) * 1993-06-01 1996-06-05 Dipsol Chemical Co., Ltd Sn-Bi alloy-plating bath and plating method using the same
JPH10245683A (en) * 1997-03-06 1998-09-14 Electroplating Eng Of Japan Co Formation of tin alloy coating and tin alloy plating bath

Family Cites Families (5)

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US4749626A (en) 1985-08-05 1988-06-07 Olin Corporation Whisker resistant tin coatings and baths and methods for making such coatings
JP2833026B2 (en) 1989-07-05 1998-12-09 上村工業株式会社 Electroless tin plating method
US5211831A (en) 1991-11-27 1993-05-18 Mcgean-Rohco, Inc. Process for extending the life of a displacement plating bath
US5391402A (en) * 1993-12-03 1995-02-21 Motorola Immersion plating of tin-bismuth solder
JP3419995B2 (en) 1996-05-10 2003-06-23 株式会社大和化成研究所 Electroless tin-silver alloy plating bath

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160422A (en) * 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys
US5266103A (en) * 1991-07-04 1993-11-30 C. Uyemura & Co., Ltd. Bath and method for the electroless plating of tin and tin-lead alloy
US5217751A (en) * 1991-11-27 1993-06-08 Mcgean-Rohco, Inc. Stabilized spray displacement plating process
EP0715003A1 (en) * 1993-06-01 1996-06-05 Dipsol Chemical Co., Ltd Sn-Bi alloy-plating bath and plating method using the same
JPH10245683A (en) * 1997-03-06 1998-09-14 Electroplating Eng Of Japan Co Formation of tin alloy coating and tin alloy plating bath

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010031181A1 (en) 2010-07-09 2012-01-12 Atotech Deutschland Gmbh Method and arrangement for depositing a metal layer
WO2012004325A2 (en) 2010-07-09 2012-01-12 Atotech Deutschland Gmbh Method and arrangement for depositing a metal coating
WO2012004325A3 (en) * 2010-07-09 2012-03-22 Atotech Deutschland Gmbh Method and arrangement for depositing a metal coating
US20130164451A1 (en) * 2010-07-09 2013-06-27 Helmut Bruckner Method and Arrangement for Depositing a Metal Coating
EP2882420A4 (en) * 2012-08-13 2016-06-01 Teni Boulikas Improved methods for treating cancer with reduced renal toxicity

Also Published As

Publication number Publication date
DE60044943D1 (en) 2010-10-21
ATE480340T1 (en) 2010-09-15
EP1230034B1 (en) 2010-09-08
DE19954613A1 (en) 2001-05-17
EP1230034A1 (en) 2002-08-14
JP4084569B2 (en) 2008-04-30
EP1230034A4 (en) 2003-01-08
AU1597501A (en) 2001-06-06
CN1387465A (en) 2002-12-25
CN1192125C (en) 2005-03-09
JP2003514120A (en) 2003-04-15

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