WO2001031696A1 - Composition for chemical purification of surfaces off adsorbed metal ions and atoms - Google Patents
Composition for chemical purification of surfaces off adsorbed metal ions and atoms Download PDFInfo
- Publication number
- WO2001031696A1 WO2001031696A1 PCT/PL2000/000077 PL0000077W WO0131696A1 WO 2001031696 A1 WO2001031696 A1 WO 2001031696A1 PL 0000077 W PL0000077 W PL 0000077W WO 0131696 A1 WO0131696 A1 WO 0131696A1
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- WO
- WIPO (PCT)
- Prior art keywords
- composition
- weight
- units
- anhydride
- atoms
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Abstract
The composition for chemical purification of surfaces off adsorbed metal ions and atoms is designed for chemical treatment in production technology where basic and auxiliary materials must meet strict requirements concerning purity, especially in case of chemical treatment of siliceous structures and AIII BV structures in semiconductor technology used before operations of epitaxial growth, oxidation, ion implementation, diffusion, annealing and application of thin metal or dielectric coats. According to the invention, the composition for chemical purification of surfaces off adsorbed metal ions and atoms consists of 0.1 - 20 units of weight of sulphomaleic anhydride, 0.1 - 50 units of weight of disulphomaleic anhydride, which is used in the composition as an activator of change of water molecule in cation hydration sheath during formation of chelate and water. It is most effective if used in the amount of 0.1 - 2 units of weight of the composition to purify siliceous plates before thermal process, and in the amount of 10 - 20units of weight of the composition to purify diffusive pipes.
Description
Composition for chemical purification of surfaces off adsorbed metal ions and atoms.
An invention concerns electronic engineering, and also a number of closely related production industries, where basic and auxiliary materials must meet strict requirements of purity, and especially it can be used for chemical treatment of siliceous structures and AιπBv structures in semiconductor technology.
Chemical treatment is an integral part of technology of semiconductor devices production and it is performed before the operations of epitaxial growth, oxidation, ion implementation, diffusion, annealing and application of thin metal or dielectric coats.
There are many well-known compositions for chemical treatment (pickling) of semiconductor structure plates that contain organic solvents, mineral acids and their salts, alkalis, detergents, complex compounds and other.
There are widely used pickling agents based on the mixtures of concentrated acids: hydrofluoric acid, sulphuric acid, nitric acid, hydrochloric acid, acetic acid, etc. (IIojιτaBiιeB K).r., KHSOCB A.C. //»TexHO iornH o6pa6oτκπ πoβepxHOCTeH B Mnκpo3JieκτpoHHκe.» Knee: Texmn a, 1990r. 206 c.).However they have major disadvantages, among others:
• they are characterised by instability resulting from release of acid vapours;
• their instability causes their frequent exchange, therefore they are used in huge, multi-tonne quantities, and this results in high costs of transport and enormous load on treatment systems;
• release of acid vapours causes very fast deterioration of basic technological equipment.
There is a well-known composition for purification of semiconductor structure plate surfaces before application of an epitaxial coat, which contains ammonium hydroxide and hydrogen peroxide (US Patent, N5127984, MKU HOIL 21/306). The process of treatment in the solution of ammonium hydroxide and hydrogen peroxide does not assure quality purification of siliceous plates either, as a considerable number of microscopic impurities are left on them leading to deterioration of electrophysical parameters of integrated circuits, and especially to the increase of threshold voltages of MOS transistors contained in them. The presence of ammonia, which has alkaline properties, in the solution leads in the purification process, at the temperature of 75-80°C, to pickling of siliceous plate surfaces. Besides, purifying properties of the solution deteriorate due to decomposition of hydrogen peroxide at an increased temperature, simultaneously increasing pH of the solution.
The increase of alkaline properties of the solution decreases oxidising properties of hydrogen peroxide.
Pickling agents of acidic-basic type containing 3HNO3 + HF + 5H20 + 6NaOH + H2O2 are widely used in the processes of semiconductor material pickling in order to remove metal ions from gallium arsenide base before application of epitaxial coats. Pickling agents of similar type combine all disadvantages of both acidic and basic solutions.
From a technical point of view as well as from the point of view of results achieved most similarities are found in the composition of a solution (PFS-1) for surface treatment (Russia, Patent 2052868, 20 Jan.1996. MKI HOIL 21/302), and especially for semiconductor materials, that contains water and an active additive - sulphomaleic anhydride, in the following proportion (percentages by weight):
• sulphomaleic anhydride - 0.1-70
• water - remaining
Its disadvantages are as follows:
• while dissolving ions on semiconductor structure surfaces, it does not remove molecules of metal atoms;
• with a high price of the solution — an insufficient number of plates treated per unit of composition volume;
• electrophysical characteristics of devices - on the level of characteristics after treatment in acids.
The target of the invention is to:
• create a composition for chemical purification of semiconductor structure surfaces off adsorbed metal ions and atoms;
• increase the number of semiconductor structure plates treated per unit of composition volume;
• improve the quality of products treated which leads to the increase of production output;
• improve electrophysical characteristics of structures obtained.
The target set has been achieved by use of a composition including sulphomaleic anhydride, disulphomaleic anhydride and water. The composition proposed for chemical purification of surfaces off adsorbed metal ions and atoms possesses the following component ratio, in percentages by weight:
• sulphomaleic anhydride 0.1 - 20
• disulphomaleic anhydride 0.1 - 50
• water remaining.
The proposed composition has properties of novelty, provided that, according to available data, disulphomaleic anhydride or its technical equivalent has not been used in combination with sulphomaleic anhydride for the proposed applications, i.e. for chemical purification of surfaces off adsorbed metal ions and atoms. Only the method of preparing disulphomaleic anhydride is known (Application No. 96117018/04 (023163) of 20 Aug.1996, with the right to issue a patent of 7 Jul.1997, Authors: Panajeva S.A., Malutin S.A., Lihoded O.G. et al.). The areas of its application have not been explored.
Chemical structure of disulphomaleic anhydride and its known properties do not allow drawing a clear-cut conclusion on its capabilities, in combination with sulphomaleic anhydride, to dissolve ions, and all the more adsorbed metal ions, from semiconductor material surfaces. At the same time, thanks to the composition proposed, the number of semiconductor structure plates treated per unit of composition volume increased. Electrophysical properties of devices improved and the number of efficient devices increased, as well.
The presence of disulphomaleic anhydride in the composition demonstrated such a composition behaviour that characterised the system as a whole, and that could in no way be predicted or understood on the basis of properties of its individual components - for example - the creation of an acid buffer with pH=l, which extends possibilities of the system as a whole considerably: it increased its capacity related to ions, and especially to metal atoms, it increased composition action time, etc.
An environmental problem is solved with the help of the proposed composition in the following way: only water evaporates above working baths which decreases load on treating devices considerably.
Claims
Claims
A composition for chemical purification of surfaces off adsorbed metal ions and atoms, consisting of sulphomaleic anhydride, disulphomaleic anhydride and water, characterised by the fact, that it is constituted by 0.1 - 20 units of weight of sulphomaleic anhydride, 0.1 - 50 units of weight of disulphomaleic anhydride, which is used in the composition as an activator for change of water molecule in cation hydration sheath during formation of chelate and water; and it is most effective if used in the amount of 0.1 - 2 units of weight of the composition to purify siliceous plates before thermal process, and in the amount of 10 - 20 units of weight of the composition to purify diffusive pipes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL99336365A PL188424B1 (en) | 1999-10-29 | 1999-10-29 | Composition for chemically removing metal ions and atoms from surfaces |
| PLP.336365 | 1999-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2001031696A1 true WO2001031696A1 (en) | 2001-05-03 |
Family
ID=20075380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/PL2000/000077 WO2001031696A1 (en) | 1999-10-29 | 2000-10-25 | Composition for chemical purification of surfaces off adsorbed metal ions and atoms |
Country Status (2)
| Country | Link |
|---|---|
| PL (1) | PL188424B1 (en) |
| WO (1) | WO2001031696A1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5127984A (en) * | 1991-05-02 | 1992-07-07 | Avantek, Inc. | Rapid wafer thinning process |
| WO1996024158A1 (en) * | 1995-02-03 | 1996-08-08 | Aktsionernoe Obschestvo 'nauchno-Proizvodstvennoe Predpriyatie 'sapfir' | Compound for cleaning solid surfaces |
-
1999
- 1999-10-29 PL PL99336365A patent/PL188424B1/en not_active IP Right Cessation
-
2000
- 2000-10-25 WO PCT/PL2000/000077 patent/WO2001031696A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5127984A (en) * | 1991-05-02 | 1992-07-07 | Avantek, Inc. | Rapid wafer thinning process |
| WO1996024158A1 (en) * | 1995-02-03 | 1996-08-08 | Aktsionernoe Obschestvo 'nauchno-Proizvodstvennoe Predpriyatie 'sapfir' | Compound for cleaning solid surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| PL188424B1 (en) | 2005-01-31 |
| PL336365A1 (en) | 2001-05-07 |
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