WO2001023800A1 - Systeme de distribution de gaz - Google Patents

Systeme de distribution de gaz Download PDF

Info

Publication number
WO2001023800A1
WO2001023800A1 PCT/JP2000/006616 JP0006616W WO0123800A1 WO 2001023800 A1 WO2001023800 A1 WO 2001023800A1 JP 0006616 W JP0006616 W JP 0006616W WO 0123800 A1 WO0123800 A1 WO 0123800A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
pipe
sub
valve
gas supply
Prior art date
Application number
PCT/JP2000/006616
Other languages
English (en)
Japanese (ja)
Inventor
Ryoichi Yamamoto
Original Assignee
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude filed Critical L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
Priority to AU73215/00A priority Critical patent/AU7321500A/en
Publication of WO2001023800A1 publication Critical patent/WO2001023800A1/fr

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/02—Pipe-line systems for gases or vapours
    • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas

Definitions

  • the present invention relates to a gas supply device, and more particularly to a gas supply device capable of supplying high-purity gas to a consuming facility without staying in a piping system.
  • high-purity gases such as nitrogen gas, argon gas, and hydrogen gas are supplied from a gas supply device to a semiconductor manufacturing device. These high-purity gases are supplied to a semiconductor manufacturing apparatus in a state where impurities such as moisture, hydrocarbons, carbon monoxide or carbon dioxide have been removed to a sub-ppb concentration.
  • a plurality of semiconductor manufacturing apparatuses are installed in a production site. Conventionally, high-purity gas has been supplied to a plurality of these semiconductor manufacturing apparatuses, generally using a gas supply apparatus using a fishbone type piping system.
  • the loop pipe system is composed of a loop-shaped main pipe and sub pipes connected to the main pipe at both ends.
  • a plurality of semiconductor manufacturing apparatuses are connected to the ends of branch pipes branched from the sub-pipe.
  • a plurality of sub-pipes as described above are provided in parallel.
  • the pipe is formed in a loop shape in this way, the location of the gas is reduced, and it is possible to prevent impurities from being mixed into the high-purity gas.
  • the flow rate and pressure in the tube tend to fluctuate due to the fluctuation of the gas consumption of each semiconductor manufacturing device. Is also difficult to produce.
  • an object of the present invention is to provide a gas supply device capable of supplying high-purity gas to a consuming facility without staying in a piping system.
  • the gas supply device of the present invention has the following features:
  • a looped main pipe connected to a gas supply
  • a sub-pipe connected to the main pipe at both ends and connected to a gas consuming facility on the way;
  • the exhaust pipe is configured to discharge a part of the gas in the sub pipe to the outside while the gas is being supplied to the consuming facility.
  • the gas supplied from the gas supply source does not easily stay in the pipe.
  • some of the gas in the sub-pipe is exhausted through the exhaust pipe. This makes it possible to create a state in which the gas is constantly flowing in the piping system. For this reason, gas can be reliably prevented from staying in the piping system, and the purity of the gas supplied to the consuming facility (for example, semiconductor manufacturing equipment) can be maintained at a high level.
  • the gas containing the impurities remaining in the piping system when the gas containing the impurities remaining in the piping system is removed after the maintenance of the gas supply device (main piping or sub piping, etc.), Can be purged through the exhaust pipe. For this reason, the gas containing the above-mentioned impurities should not be passed through the interior of the consuming facility (or even if it should be kept to a minimum), the piping system should be purged. As a result, gas containing impurities can be removed.
  • the gas supply device of the present invention further includes a flow restricting means for restricting a gas flow in the sub-pipe in the middle of the sub-pipe, wherein the exhaust pipe has A flow meter is provided near each side of the restriction means, and a flow meter is provided on each exhaust pipe.
  • the gas By controlling the flow state of the gas in the sub-pipe by using this flow restricting means, the gas can be reliably discharged from the exhaust pipe. As a result, high-purity gas can be stably supplied to consuming facilities. That is, by stopping or restricting the flow of gas passing through the flow restriction means, a part of the gas flowing in from one end of the sub-pipe is removed from the pair of exhaust pipes. Exhaust from the exhaust pipe connected to the one side of At the same time, a part of the gas flowing from the other end of the sub-pipe is exhausted from the exhaust pipe connected to the other side, so that the gas can be prevented from staying in the sub-pipe. You.
  • the flow restricting means is a valve whose opening can be adjusted.
  • the gas supply device of the present invention further includes an openable / closable valve at both ends of the sub-pipe which is in the vicinity of a connection with the main pipe.
  • the sub-pipe is closed. Maintenance of the facilities of the consumer facility connected between one end of the You can do a nonsense. At this time, gas can be supplied normally to the consuming facilities connected to other parts.
  • FIG. 1 is a piping diagram showing an example of the configuration of a gas supply device according to the present invention.
  • FIG. 2 is a diagram showing another example of the flow rate limiting means used in the gas supply device according to the present invention.
  • the supplied gas is nitrogen gas
  • the gas consuming facility is a semiconductor manufacturing apparatus.
  • the supplied gas and the gas consuming facility in the gas supply apparatus of the present invention are as follows. It is not limited to.
  • FIG. 1 shows an example of a piping diagram of a gas supply device according to the present invention.
  • the gas supply device 1 includes a loop-shaped main pipe 2, a plurality of sub-pipes 3 connected to the main pipe 2 at both ends, and an exhaust pipe 4 branched from each sub-pipe 3. I have.
  • a liquefied nitrogen storage tank 6 (gas supply source) is connected to the main pipe 2 via a purifier 5.
  • the liquefied nitrogen in the liquefied nitrogen storage tank 6 is introduced into the purifier 5 after being vaporized.
  • the nitrogen gas is introduced into the main pipe 2 after impurities such as moisture, hydrocarbons, carbon monoxide and carbon dioxide are removed to a sub-ppb concentration in the purifier 5.
  • Valve V 1 is installed at the connection between the purifier 5 and the main pipe 2. Using this valve V 1, the flow of nitrogen gas to the main pipe 2 is controlled.
  • the liquefied nitrogen storage tank 6 is located outside the factory building, and the part after the purifier 5 is located inside the factory building. Arranging the main pipe 2 along the wall of the factory building (or inside the wall) is advantageous in terms of space.
  • Each sub pipe 3 is connected to the main pipe 2 at both ends.
  • the plurality of sub-pipes 3 are provided at appropriate intervals from each other.
  • Valves V 2 are provided at both ends of the sub-pipe 3 (accordingly, at the connection with the main pipe 2). By closing the valve V 2 at both ends of the sub pipe 3, it is possible to prevent nitrogen gas from flowing into the sub pipe 3. At this time, the flow of the nitrogen gas in the main pipe 2 is not hindered.
  • the valve V 2 is connected to the main piping 3 on the sub-piping 3 so that a stagnant portion does not occur in the flow of nitrogen gas in the main piping 2. Mounted as close as possible to 2.
  • a valve V3 (flow rate restricting means) for restricting the flow of nitrogen gas in the sub-pipe 3 is provided.
  • Two semiconductor manufacturing apparatuses 7 are connected to each sub-pipe 3 on both sides of the valve V3 via branch pipes.
  • An exhaust pipe 4 is branched from the vicinity of both sides of each valve V 3. That is, two exhaust pipes 4 are branched from one sub pipe 3.
  • each valve V 3 is closed, each exhaust pipe 4 is connected to a valve V on the sub-pipe 3 so that a stagnant portion does not occur in the flow of the nitrogen gas in the sub-pipe 3. 3 in Mounted as close as possible.
  • a valve V 4 and a flow meter FI 1 are mounted on each exhaust pipe 4. Using the flow meter FI 1, the flow rate of the nitrogen gas discharged through each exhaust pipe 4 is measured.
  • All the exhaust pipes 4 are connected to one exhaust collecting pipe 8.
  • the exhaust collecting pipe 8 is provided with a delivery pipe 9.
  • a flow meter FI 2 and an abatement device 10 are mounted on the delivery pipe 9.
  • the total flow rate of the nitrogen gas discharged through all the exhaust pipes 4 is measured using the flow meter FI 2.
  • the nitrogen gas discharged through the delivery pipe 9 is used as a dilution gas of the abatement apparatus 10.
  • the nitrogen gas discharged through the delivery pipe 9 can be used as a diluting gas when venting the combustible gas.
  • High-purity nitrogen gas is introduced from the liquefied nitrogen storage tank 6 into the main pipe 2 via the purifier 5 and the valve V1.
  • the high-purity nitrogen gas flows through the main pipe 2 and then flows into the sub-pipe 3 via the valve V 2.
  • the valves V1 to V4 are open. ⁇
  • the nitrogen gas flowing into the pipe 3 is supplied to each semiconductor manufacturing apparatus 7 via each branch pipe. At the same time, a part of the nitrogen gas in the sub pipe 3 is exhausted through the exhaust pipe 4.
  • the nitrogen gas is always kept in the main pipe 2 and the sub-pipe 3. Since it flows into the pipe, there is no stagnation in the piping system. Since no stagnant portion of nitrogen gas is generated in the piping system, the phenomenon that impurities released from the inner surface of the pipe into the nitrogen gas are not accumulated in the stagnant portion is eliminated, and the purity of the nitrogen gas supplied to the semiconductor manufacturing equipment is reduced. It is possible to maintain a high level at all times.
  • a valve V 3 is provided in the middle of the sub-pipe 3, and the exhaust pipe 4 is branched from the vicinity of both sides of each valve V 3.
  • the gas can always be reliably discharged from the exhaust pipe 4.
  • the flow rate of the discharged gas is measured by using the flow meter FI 1 mounted on each exhaust pipe 4, whereby the nitrogen gas is supplied to the semiconductor manufacturing apparatus 7. It is also possible to know the supply state. Furthermore, if the opening degree of each valve V3 is adjusted according to the flow rate of the gas measured by the flow meter FI1, the nitrogen gas to each semiconductor manufacturing apparatus 7 can be obtained. Supply state can be more stabilized.
  • the valve V 3 By increasing the opening of 3, the gas flow from the side that consumes less nitrogen gas to the side that consumes more gas is promoted, The supply state of raw gas can be stabilized.
  • the valve V provided on the exhaust pipe 4 By adjusting the opening degree of 4, the flow of gas on one side can be restricted, and the supply state of nitrogen gas can be stabilized. In some cases, it is also possible to stabilize the supply state of the nitrogen gas by using the opening adjustment of the valve V3 and the valve V4 in combination.
  • the total flow of the gas exhausted through all the exhaust pipes 4 is measured using a flow meter FI2. Therefore, by comparing the total flow rate of the gas measured by the flow meter FI 2 with the flow rate of the gas measured by the flow meter FI 1 for each sub-pipe 3, The variation in the supply state of the nitrogen gas to the semiconductor manufacturing apparatus 7 connected to each sub-pipe 3 can also be known. Further, by providing a nitrogen gas purity meter near the flow meter FI 2, centralized purity control of nitrogen gas supplied to the semiconductor manufacturing apparatus 7 can be performed.
  • the flow of nitrogen gas can be stopped only between the one end of the sub pipe 3 and the valve V3.
  • the valve V 3 and the valve V 2 on the side where the inflow of nitrogen gas is to be stopped may be closed.
  • nitrogen gas flows into the sub-pipe 3 on the side of the valve 2 which has not been closed, but since the exhaust pipe 4 is connected to the end thereof, no stagnation portion is generated.
  • the piping system by configuring the piping system as shown in Fig. 1, it is possible to easily add or modify equipment within the production site. At this time, the piping system can be changed while maintaining the state where no gas stagnation occurs.
  • the gas supply device of the present invention is not limited to the embodiment shown in the above example.
  • the valve V3 is used as the gas flow restricting means.
  • the orifice 11 may be used in place of the valve V3. Even in this manner, the flow of gas in the sub pipe 3 can be restricted, so that the gas is reliably discharged from the exhaust pipe 4 and the generation of gas stagnation is prevented. Can be prevented.
  • the main pipe and the sub-pipe are configured in a loop, and a part of the gas in the sub-pipe can be constantly exhausted through the exhaust pipe while supplying gas to the consumption facilities. If the device is configured, generation of gas stagnation can be prevented. This makes it possible to stably supply high-purity gas to consumer facilities. That is, although the example shown in FIG. 1 is a preferred embodiment, a gas flow restricting means such as the valve V 3 is not always necessary, and at least one exhaust pipe is provided for each sub-pipe. If pipes are provided, high-purity gas can be supplied to consuming facilities.
  • the gas supply system of the present invention it is possible to reliably prevent the gas from staying in the piping system, so that the purity of the gas supplied to the consuming facility can be maintained at a high level. become.
  • the gas supply system of the present invention can be used particularly effectively in a facility such as a semiconductor factory, which has many facilities that consume high-purity gas.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Pipeline Systems (AREA)

Abstract

L'invention porte sur un système de distribution stable d'un gaz de grande pureté aux lieux de consommation empêchant l'accumulation du gaz dans les conduites. Ledit système comporte une conduite principale en boucle (2) reliée à la source (6) de gaz et des conduites auxiliaires (3) dont les deux extrémités sont raccordées à la conduite principale et le long desquelles sont piquées les installations (7) des consommateurs. Une vanne (V3) montée sur les conduites auxiliaires (3) en règle le débit de gaz, tandis que des tubulures d'échappement (4) branchées de part et d'autre de ladite vanne sont munies respectivement d'un robinet (V4) et d'un débitmètre (F11). Les tubulures d'échappement (4) peuvent laisser s'échapper une partie du gaz des conduites auxiliaires (3) tandis que le gaz alimente les installations (7) des consommateurs. De plus une vanne d'arrêt (V2) est montée à chaque extrémité des conduites auxiliaires (3).
PCT/JP2000/006616 1999-09-27 2000-09-26 Systeme de distribution de gaz WO2001023800A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU73215/00A AU7321500A (en) 1999-09-27 2000-09-26 Gas feed device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/272695 1999-09-27
JP27269599A JP2001099400A (ja) 1999-09-27 1999-09-27 ガス供給装置

Publications (1)

Publication Number Publication Date
WO2001023800A1 true WO2001023800A1 (fr) 2001-04-05

Family

ID=17517516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/006616 WO2001023800A1 (fr) 1999-09-27 2000-09-26 Systeme de distribution de gaz

Country Status (4)

Country Link
JP (1) JP2001099400A (fr)
AU (1) AU7321500A (fr)
TW (1) TW440665B (fr)
WO (1) WO2001023800A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020183646A1 (fr) * 2019-03-13 2020-09-17 三菱電機株式会社 Système d'alimentation en fluide, dispositif de détermination de trajet, programme de détermination de trajet et procédé de détermination de trajet

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009144966A (ja) * 2007-12-13 2009-07-02 Panasonic Corp 気体搬送装置
US8381756B2 (en) * 2008-12-03 2013-02-26 Taiyo Nippon Sanso Corporation Method for supplying gas
CN103807600B (zh) * 2013-11-09 2016-03-30 沈军 车载储气瓶组拖车

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091100A (ja) * 1983-10-21 1985-05-22 Shinko Fuaudoraa Kk 滞留部をもたない配管構造
JPH04151097A (ja) * 1990-10-11 1992-05-25 Hitachi Ltd ガス配管システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091100A (ja) * 1983-10-21 1985-05-22 Shinko Fuaudoraa Kk 滞留部をもたない配管構造
JPH04151097A (ja) * 1990-10-11 1992-05-25 Hitachi Ltd ガス配管システム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020183646A1 (fr) * 2019-03-13 2020-09-17 三菱電機株式会社 Système d'alimentation en fluide, dispositif de détermination de trajet, programme de détermination de trajet et procédé de détermination de trajet
JPWO2020183646A1 (ja) * 2019-03-13 2021-09-13 三菱電機株式会社 流体供給システム、経路決定装置、経路決定プログラム及び経路決定方法
CN113544430A (zh) * 2019-03-13 2021-10-22 三菱电机株式会社 流体供给系统、路径决定装置、路径决定程序及路径决定方法

Also Published As

Publication number Publication date
TW440665B (en) 2001-06-16
JP2001099400A (ja) 2001-04-10
AU7321500A (en) 2001-04-30

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