WO2001008221A9 - High frequency module - Google Patents

High frequency module

Info

Publication number
WO2001008221A9
WO2001008221A9 PCT/JP2000/004949 JP0004949W WO0108221A9 WO 2001008221 A9 WO2001008221 A9 WO 2001008221A9 JP 0004949 W JP0004949 W JP 0004949W WO 0108221 A9 WO0108221 A9 WO 0108221A9
Authority
WO
WIPO (PCT)
Prior art keywords
frequency module
cap
substrate
module according
semiconductor chip
Prior art date
Application number
PCT/JP2000/004949
Other languages
French (fr)
Japanese (ja)
Other versions
WO2001008221A1 (en
Inventor
Katsuhiko Hayashi
Original Assignee
Tdk Corp
Katsuhiko Hayashi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21047999A external-priority patent/JP2001044341A/en
Priority claimed from JP32615599A external-priority patent/JP2001144235A/en
Priority claimed from JP32615699A external-priority patent/JP2001144202A/en
Application filed by Tdk Corp, Katsuhiko Hayashi filed Critical Tdk Corp
Priority to EP00946488A priority Critical patent/EP1130642A4/en
Publication of WO2001008221A1 publication Critical patent/WO2001008221A1/en
Publication of WO2001008221A9 publication Critical patent/WO2001008221A9/en
Priority to US10/667,583 priority patent/US6906259B2/en

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Classifications

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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Definitions

  • the present invention relates to a high-frequency module used in a high-frequency band, and particularly to a high-frequency module such as a power amplifier module equipped with a high-frequency semiconductor chip.
  • a high-frequency module such as a power amplifier module equipped with a high-frequency semiconductor chip.
  • a module or package on which a high-frequency semiconductor chip is mounted for example, a module or package disclosed in Japanese Patent Application Laid-Open No. H10-501102 is known.
  • a high-frequency module is constructed by mounting a semiconductor chip on a substrate that constitutes a package using a wire-bonding flip-chip, and then covering it with a metal cap.
  • Another conventional high-frequency module is disclosed in US Pat. No. 5,831,836. This is formed by constituting the high-frequency module in the form which is mounted on a substrate of semiconductor chips by Flip Puchippu, abuts a top plate portion of the rear metal cap of the semiconductor chip 0
  • FIG. 1 is a cross-sectional view schematically showing a conventional high-frequency module disclosed in US Pat. No. 5,831,836.
  • a conventional high-frequency module 1 includes a substrate 2, a semiconductor chip 3, and a metal cap 4.
  • the metal cap 4 also serves as a heat sink.
  • the semiconductor chip 3 is formed by a flip chip, that is, a microbump 5 is formed by solder or gold on an external connection electrode terminal on the bottom surface of the semiconductor chip 3, and the substrate 2 and the semiconductor chip 3 are electrically connected by the microbump 5.
  • a microbump 5 is wrapped in the gap between the substrate 2 and the semiconductor chip 3.
  • the resin 6 called underfilling is filled and cured.
  • the metal cap 4 is fixed to the top plate portion 4 b of the semiconductor chip 3 with a conductive adhesive 7, and the peripheral edge 4 a is connected to an electrode (not shown) on the substrate 2 and the conductive adhesive. Or fixed by solder 8.
  • the conventional high-frequency module shown in Fig. 1 had the following problems.
  • the connection between the semiconductor chip 3 and the substrate 2 is made by the microbump 5, but the height of the microbump 5 slightly varies depending on manufacturing conditions.
  • the distance between the semiconductor chip 3 and the substrate 2 varies from product to product, and due to this variation, the edge 4 a of the metal cap 4 fixed on the semiconductor chip 3 does not reach the surface of the substrate 2, or conversely.
  • the top plate portion 4b of the metal cap 4 does not reach the upper surface of the semiconductor chip 3.
  • Another object of the present invention is to provide a high-frequency module capable of effectively releasing heat generated from a semiconductor chip. Disclosure of the invention
  • An object of the present invention is a high-frequency module mounted on a mother board, comprising: a substrate; a semiconductor chip fixed on the substrate; and a cap provided above the semiconductor chip.
  • the cap includes a flat plate portion to which heat generated from the semiconductor chip is supplied, and an extending portion extending downward from both ends of the flat plate portion. The extending portion of the cap abuts on a side surface of the substrate.
  • the extension of the cap since the extension of the cap is in contact with the side surface of the substrate, there is some variation in the height of the semiconductor chip, and there is some manufacturing variation in the shape of the cap. Also, the extended portion of the cap can be brought into contact with the side surface of the substrate in a reliable and large area. For this reason, the heat supplied from the semiconductor chip to the flat plate portion of the cap is effectively released to the substrate through the extended portion of the cap.
  • the extension portion force S of the cap is connected to an electrode provided on the motherboard.
  • the extension of the cap is connected to the electrode provided on the motherboard, so that the heat generated by the semiconductor chip is applied to the motherboard having a large heat capacity. Can be released. Therefore, the heat radiation characteristics are further improved.
  • the apparatus further comprises a top plate provided between the semiconductor chip and the flat portion of the cap.
  • the top plate since the top plate is provided between the semiconductor chip and the flat plate portion of the cap, the top plate serves as a heat sink, and the heat radiation characteristics are further improved. .
  • the thickness of the top plate is larger than the thickness of the flat portion of the cap.
  • the thickness of the top plate is Since the thickness of the top plate is thicker than that of the flat plate, the heat capacity of the top plate is large, and the heat radiation characteristics are further improved.
  • the top plate includes aluminum.
  • the top plate contains aluminum, it is advantageous in terms of conductivity, heat conductivity, and price, and heat radiation from the semiconductor chip is satisfactorily performed. Costs can be reduced.
  • the semiconductor chip is mounted on the substrate in a flip chip shape.
  • the semiconductor chip is mounted on the substrate in a flip-chip shape, the size of the entire high-frequency module can be reduced.
  • the device further comprises a non-reciprocal element mounted on the substrate, and an upper surface of the non-reciprocal element is in contact with the flat portion of the cap.
  • the non-reciprocal element since the upper surface of the non-reciprocal element is in contact with the flat plate portion of the cap, the non-reciprocal element itself functions as a heat sink. Therefore, the heat radiation characteristics are further improved.
  • a side surface of the irreversible element is in contact with the extension of the cap.
  • the contact area between the non-reciprocal element and the cap is large, and the heat radiation characteristics are further improved.
  • the object of the present invention is also a high-frequency module mounted on a motherboard, comprising: a substrate; a semiconductor chip fixed on the substrate; and a heat sink having a protrusion abutting on the semiconductor chip. And a means for releasing heat supplied to the heat sink to the substrate.
  • the protrusion is provided on the heat sink, and the protrusion is provided. Since the semiconductor chip and the semiconductor chip are in contact with each other, the protrusion increases the heat capacity of the entire heat sink. Therefore, heat generated by the semiconductor chip is effectively released to the substrate. Furthermore, since the heat sink and the semiconductor chip are in contact with each other via the protrusion, a space is formed between the heat sink and the substrate in a portion other than the protrusion. For this reason, it is possible to mount other electronic components and the like on the substrate by using such a space.
  • the protrusion of the heat sink is formed from one end to the other end of the heat sink. Since the heat sink is formed from one end to the other end, the heat sink can be easily formed, and the cost can be reduced. However, since the protrusion of the heat sink is formed from one end to the other end of the heat sink, the substrate and the protrusion of the heat sink are not limited to the portion other than the portion where the semiconductor chip is mounted. Since they are close to each other, if an adhesive or the like is introduced into such close portions, the substrate and the heat sink can be firmly fixed.
  • the heat sink is manufactured by extrusion of metallic aluminum.
  • the manufacturing cost of the heat sink can be reduced.
  • the means is constituted by a cab having a flat plate portion covering the heat sink and extending portions extending downward from both ends of the flat plate portion.
  • the means for releasing the heat supplied to the heat sink to the substrate is constituted by a cap having a flat portion covering the heat sink and extending portions extending downward from both ends of the flat portion.
  • the extension of the cap is in contact with a first side surface of the substrate.
  • the extension of the cap since the extension of the cap is in contact with the first side surface of the substrate, the height of the semiconductor chip varies slightly, or the shape of the cap is changed. Even if there is some manufacturing variation, the extended portion of the cap and the first side surface of the substrate can be brought into contact with each other reliably and over a large area. Therefore, the heat supplied from the semiconductor chip to the flat plate portion of the cap via the heat sink is effectively released to the substrate via the extended portion of the cap.
  • the extension of the cap is connected to an electrode provided on the motherboard.
  • the extension of the cap is connected to the electrode provided on the motherboard, so that the heat generated by the semiconductor chip is removed from the motherboard having a large heat capacity. It can be effectively released to the board. Therefore, the heat radiation characteristics are further improved.
  • the electronic device further comprises an electronic component mounted in a space formed between the heat sink and the substrate.
  • the thickness of the electronic component is greater than the thickness of the semiconductor chip.
  • a space formed between the portion of the heat sink other than the protrusion and the substrate is wider than a space formed between the protrusion of the heat sink and the substrate.
  • the device further comprises a non-reciprocal element, and an upper surface of the non-reciprocal element is in contact with the flat portion of the cap.
  • the non-reciprocal element since the upper surface of the non-reciprocal element is in contact with the flat plate portion of the cap, the non-reciprocal element itself functions as a heat sink. Therefore, the heat radiation characteristics are further improved.
  • the first side surface of the non-reciprocal element is in contact with a second side surface of the substrate facing the first side surface.
  • the irreversible element is not mounted on the substrate, but is fixed so that the first side of the irreversible element is in contact with the second side of the substrate. Therefore, the height of the entire high-frequency module can be set to substantially the height of only the nonreciprocal element, not to the height of the nonreciprocal element plus the height of the substrate, and a reduction in thickness can be achieved. Therefore, a high-frequency module suitable for use in a mobile phone or the like can be provided.
  • the length of the second side surface of the substrate is substantially equal to the length of the first side surface of the irreversible element.
  • the shape of the high-frequency module as a whole may be square. it can. This not only makes it easier to handle the high-frequency module, but also eliminates the need for the cap to have a complicated shape, thereby reducing manufacturing costs.
  • a second side surface of the non-reciprocal element opposite to the first side surface is in contact with the extension of the cap.
  • the second side of the irreversible element Since the surface is in contact with the extended portion of the cap, the contact area between the irreversible element and the cap is large, and the heat radiation characteristics are further improved.
  • the cap has a curved portion extending downward from the other ends of the flat plate portion.
  • the bent portion extending downward from the other ends of the flat plate portion is formed on the cap, so that the mechanical strength of the cap is improved.
  • a length from the flat plate portion of the cap to an end of the bent portion is shorter than a length from the flat plate portion of the cap to an end of the extension portion.
  • the bent portion forms a gap between the end portion of the bent portion and the substrate without covering a side surface of the substrate.
  • the object of the present invention is also a high-frequency amplifier including a substrate having first and second side surfaces, a semiconductor chip mounted on the substrate, and a heat sink provided on the semiconductor chip; A non-reciprocal element having a second side face, and a cap having a flat plate portion, a first extension portion, and a second extension portion, wherein the high-frequency amplifier portion and the non-reciprocal element
  • the first side surface of the substrate and the first side surface of the non-reciprocal element are fixed so as to be in contact with each other, and the cap, the high-frequency amplifier unit, and the non-reciprocal element are connected to each other by the cap.
  • the flat portion contacts at least the heat sink of the high-frequency amplifier portion, the first extension of the cap contacts the second side surface of the substrate, and the second portion of the cap
  • the extension is the second of the irreversible element. It is achieved by a high-frequency module, characterized in that it is fixed so as to contact the side surface
  • the non-reciprocal element is not mounted on the substrate constituting the high-frequency amplifier, but is fixed so that the first side of the non-reciprocal element and the first side of the substrate abut.
  • the height of the entire high-frequency module can be set to almost the height of the non-reciprocal element, not the height of the non-reciprocal element plus the board height. Can be achieved.
  • a high-frequency module suitable for use in a mobile phone or the like can be provided. Further, since the high-frequency amplifier section and the non-reciprocal element are integrally covered with the cap, it is possible to provide a high-frequency module that is easy to handle.
  • a length of the first side surface of the substrate is substantially equal to a length of the first side surface of the non-reciprocal element.
  • the shape of the entire high-frequency module is square. Can be. This not only facilitates the handling of the high-frequency module, but also eliminates the need for the cap to have a complicated shape, thereby reducing manufacturing costs.
  • the length of the first side surface of the irreversible element is longer than a distance from the first side surface to the second side surface of the irreversible element.
  • the length of the first side face of the non-reciprocal element is made to match the length of the first side face of the substrate. Since it is configured to be longer than the distance to the side surface of 2, the permanent magnet included in the irreversible element can be a permanent magnet that has a large shape in the plane direction, and as a result, However, it is possible to generate a larger magnetic force with the same thickness. As a result, the thickness of the permanent magnet required to obtain the required magnetic force can be reduced, so that the thickness of the entire high-frequency module can be reduced.
  • the first extension portion is electrically connected to a mother board on which the high-frequency module is mounted.
  • the first extension of the cap is electrically connected to the mother board on which the high-frequency module is mounted, so that the heat generated by the semiconductor chip has a large heat capacity. It can be effectively released to the motherboard.
  • a predetermined potential can be applied to the semiconductor chip via the cap.
  • the irreversible element further has an upper surface, and the flat plate portion of the cap is in contact with the upper surface of the irreversible element.
  • the non-reciprocal device since the flat plate portion of the cap is in contact with the upper surface of the non-reciprocal device, the non-reciprocal device functions as a heat sink. Therefore, the heat radiation characteristics are improved.
  • FIG. 1 is a cross-sectional view schematically showing a conventional high-frequency module disclosed in US Pat. No. 5,831,836.
  • FIG. 2 (A) is a perspective view showing a high-frequency module according to a preferred embodiment of the present invention
  • FIG. 2 (B) is a cross-sectional view of the module mounted on a motherboard
  • FIG. 2 (C) is a partially enlarged view thereof. It is sectional drawing.
  • FIG. 3 is an exploded perspective view of a high-frequency module according to a preferred embodiment of the present invention.
  • FIG. 4 (A) is a perspective view showing a high-frequency module according to another preferred embodiment of the present invention
  • FIG. 4 (B) is a sectional view in a state where the module is mounted on a motherboard.
  • FIG. 5 is an exploded perspective view of a high-frequency module according to another preferred embodiment of the present invention.
  • FIG. 6 (A) is a perspective view showing a high-frequency module according to still another preferred embodiment of the present invention
  • FIG. 6 (B) is a module mounted on a motherboard.
  • FIG. 4 is a cross-sectional view in a state of being moved.
  • FIG. 7 is an exploded perspective view of a high-frequency module according to still another preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional view taken along the line X--X shown in FIG. 6 (A).
  • FIG. 9 is a cross-sectional view taken along the line Y--Y shown in FIG. 6 (A).
  • FIG. 10 is a cross-sectional view of a high-frequency module having a structure in which an isolator is removed from the high-frequency modules shown in FIGS. 6 to 9.
  • FIG. 11 is a diagram schematically illustrating the planar shapes of the high-frequency amplifier unit and the isolator.
  • FIG. 2 (A) is a perspective view showing a high-frequency module according to a preferred embodiment of the present invention
  • FIG. 2 (B) is a cross-sectional view of the module mounted on a motherboard
  • FIG. 2 (C) is a partially enlarged view thereof. It is sectional drawing.
  • FIG. 3 is an exploded perspective view of a high-frequency module according to a preferred embodiment of the present invention.
  • the high-frequency module 10 includes a substrate 11, a plurality of electrodes 12 formed on the back surface of the substrate 11, and a surface of the substrate 11.
  • An electronic component 14 such as a semiconductor chip 13 and a capacitor mounted on the semiconductor chip 13, a top plate 15 mounted on the upper surface of the semiconductor chip 13, and a cap 16 are provided.
  • the high-frequency module 10 having such a configuration is mounted on the motherboard 23 as shown in FIG. 2 (B).
  • the substrate 11 is a single-layer insulating substrate or a multi-layer substrate in which elements are built in a laminated structure.
  • semiconductor chip 13 and An electrode 19 for establishing electrical connection with the electronic component 14 is provided on the surface of substrate 11.
  • the electrode 19 is connected to a through-hole (not shown) provided inside the substrate 11. It is electrically connected to the electrode 12 formed on the back surface of the substrate 11 through the intermediary.
  • the electrode 12 is electrically connected to the electrode 24 provided on the motherboard 23 as shown in FIG. 2 (B).
  • the semiconductor chip 13 is a semiconductor chip that handles high-frequency signals. As shown in FIG. 2 (C), the semiconductor chip 13 has a plurality of electrodes 20, and micro bumps 17 made of solder or gold are formed on the electrodes 20. Is formed. The micro-bump 17 is electrically and mechanically connected to the electrode 19 formed on the surface of the substrate 11 described above, whereby the electrode 19 formed on the substrate 11 is connected to the semiconductor. The electrodes 20 formed on the chip 13 are electrically connected, and the semiconductor chip 13 is fixed on the surface of the substrate 11 in a flip chip shape. Further, as shown in FIG. 2 (C), the gap between the semiconductor chip 13 and the substrate 11 is filled with an underfilling resin 18 and is hardened. 13 and the substrate 11 are firmly fixed. Since the underfilling resin 18 needs to be supplied to the entire gap between the semiconductor chip 13 and the substrate 11, it is preferable to use a low-viscosity resin such as an epoxy resin.
  • a low-viscosity resin such as an epoxy resin.
  • the top plate 15 is a plate-like member made of a metal such as aluminum or copper. As shown in FIG. 2 (C), the top plate 15 of the semiconductor chip 13 has solder or conductive adhesive 2 It is electrically connected by 1. Further, at the position where the semiconductor chip 13 is mounted, the space between the top plate 15 and the substrate 11 is filled with an insulating resin 22, whereby the semiconductor chips 13 and 13 are filled. The top plate 15 and the substrate 11 are fixed to each other, and the semiconductor chip 13 is protected. Since it is necessary to protect the semiconductor chip 13 by +, the resin 22 is preferably a highly viscous resin such as a silicon resin.
  • the cap 16 is formed by bending a band-shaped metal such as aluminum or copper, and has a flat portion 16a and extending portions 16b extending downward from both ends of the flat portion 16a.
  • the flat plate portion 16a of the cap 16 is electrically connected and fixed to the top plate 15 by soldering, a conductive adhesive, or spot welding (neither is shown).
  • the extending portions 16b are in contact with both side surfaces of the substrate 11 so as to sandwich the substrate 11 therebetween.
  • ground electrodes (not shown) are provided on both side surfaces of the substrate 11, and the ground electrodes and the extending portions 16 b are electrically connected by a conductive adhesive or solder (not shown). Connected to and fixed.
  • the mother board 23 on which the high-frequency module 10 is mounted is provided with the plurality of electrodes 24 as described above, and is electrically connected to the electrodes 12 provided on the substrate 11. Further, a ground electrode 25 is provided on the mother board 23, and the ground electrode 25 and the lower portion of the extension 16 b of the cap 16 are connected by solder 26.
  • the heat generated by the semiconductor chip 13 is transmitted to the substrate 11 via the top plate 15 and the cap 16 and the ground of the mother board 23 is formed. It is transmitted to electrode 25 and dissipated. Moreover, since the extension 16b of the cap 16 is in contact with the side surface of the substrate 11, the flat plate 16a of the cap 16 is in close contact with the entire top surface of the top plate 15, and the cap 16 The extension 16b of 16 is in close contact with the side surface of the substrate 11 without any gap. For this reason, an extremely good heat radiation effect can be obtained.
  • the top plate 15 since the top plate 15 is interposed between the semiconductor chip 13 as a heat source and the cap 16, the top plate 15 itself serves as a heat sink for accumulating ripening. Role.
  • the heat accumulated in the top plate 15 is transmitted from the flat plate portion 16a of the cap 16 to the substrate 11 and the mother board 23 via the extension portion 16b as described above.
  • the top plate 15 since the top plate 15 serves as a heat sink for accumulating heat, the heat radiation characteristics are further improved.
  • Figures 2 and 3 show As shown, the thickness of the top plate 15 is formed to be thicker than the thickness of the cap 16, so that the capability as a heat sink is high, and the semiconductor chip 13 is relatively large like a high-frequency power amplifier.
  • the contact area between the top plate 15 and the flat plate portion 16a of the cap 16 is equal to the top plate 15 and the electrode 13a on the upper surface of the semiconductor chip 13. Since the contact area is larger than the contact area, the heat accumulated in the top plate 15 is efficiently released to the substrate 11 and the mother board 23.
  • the top plate 15 is not limited to metal, and may have a configuration in which a conductor is attached to a resin or a ceramic plate.
  • the heat generated by the semiconductor chip 13 is radiated to the mother board 23 via the top plate 15 and the cap 16, but a part of the heat is generated via the micro bump 17 and the resin 18.
  • the heat is also transmitted to the substrate 11, and is also radiated from the electrodes 12 of the substrate 11 to the motherboard 23.
  • the high-frequency module 10 according to the present embodiment is used in a high-frequency band exceeding, for example, 1 GHz, it is fixed to the electrode 13 a on the upper surface of the semiconductor chip 13 mounted on the high-frequency module 10.
  • the electrode 13 a force S on the upper surface of the semiconductor chip 13, the top plate 15, and the cap 16 may be applied. Since it is connected to the ground electrode 25 of the motherboard 23, the electrode 13a of the semiconductor chip 13 can be reliably set to the same potential as the ground potential of the motherboard 23.
  • the thickness of the cap 16 is smaller than the thickness of the top plate 15, bending is easy. That is, if the cap 16 and the top plate 15 are integrated, the shape becomes complicated and molding becomes difficult, but the thin cap 16 that is easy to bend and the thick one accumulates heat
  • the high-frequency module 10 can be manufactured easily and at low cost.
  • high frequency In the module 10 since the top plate 15 and the cap 16 are used in combination, even when manufacturing the high-frequency module 10 in which the thickness of the semiconductor chip 13 and the thickness of the substrate 11 are different, By adjusting the thickness of the top plate 15, the same cap 16 can be used. For this reason, versatility is also improved, and costs can be reduced.
  • the top plate 15 can be made as thick as the height of the high-frequency module allows, so that the performance as a heat sink can be improved.
  • aluminum-copper is preferably used as described above, but aluminum is most preferably used in consideration of price, heat conduction, and electric conductivity. If the strength is high, the cap 16 may be formed by metal stay.
  • top plate 15 aluminum is used as the material of the top plate 15, it is advantageous in terms of conductivity, heat conductivity, and price, and a ground electrode (not shown) provided on the substrate 11 of the semiconductor chip 13. Good connection and heat dissipation are achieved, and manufacturing costs can be reduced.
  • the cap 16 does not cover the entire semiconductor chip 13 and the electronic component 14, the semiconductor chip 1 is not mounted on the mother board 23. 3 and the electronic component 14 can be visually observed, so that even if a defect is detected after mounting on the motherboard 23, the defective portion can be easily found and repaired.
  • FIG. 4 (B) is a cross-sectional view of a state in which this is mounted on a mother board.
  • FIG. 5 is an exploded perspective view of a high-frequency module according to another preferred embodiment of the present invention.
  • the high-frequency module 30 includes a substrate 11, electrodes 12 formed on the back surface of the substrate 11, semiconductor chips 13 mounted on the surface of the substrate 11, and electronic components such as capacitors.
  • the semiconductor device includes a component, an isolator higher than the semiconductor chip, a top plate placed on the upper surface of the semiconductor chip, and a cap.
  • the high-frequency module 30 having such a configuration is mounted on the motherboard 23, as shown in FIG. 4 (B).
  • the isolator 31 is often used as a non-reciprocal circuit element in a high-frequency circuit after a high-frequency amplifier.
  • This isolator 31 uses permanent magnets mounted on a ferrite core such as YIG, and uses them in a structure that wraps a metal plate such as iron as a magnetic yoke, so that it is higher than a normal chip component. It is easy to become a part.
  • the top plate 15 is connected to the electrode 13a (not shown in FIGS. 4 and 5) on the upper surface of the semiconductor chip 13 by soldering or conductive adhesive 21 (see FIGS. 4 and 5).
  • the top surface of the top plate 15 is substantially coplanar with the top surface of the isolator 31 or the top surface of the top plate 15 is higher than the top surface of the isolator 31. Is also slightly higher.
  • the force that makes the upper surface of the top plate 15 almost flush with the upper surface of the isolator 31 or the force that is set slightly higher than the upper surface of the isolator 31 is due to manufacturing errors. This is to prevent the upper surface of 15 from being lower than the upper surface of the isolator 31, thereby preventing a gap from being formed between the top plate 15 and the cap 16.
  • the cap 16 has a flat plate portion 16a and an extension portion 16b, and the flat plate portion 16a of the cap 16 is connected to the top plate 15 by soldering, conductive adhesive, or spot welding ( Both are electrically connected and fixed by not shown), and hold the upper surface of the isolator 31.
  • the said The protruding portions 16b are in contact with both sides of the substrate 11 therebetween.
  • ground electrodes are provided on both side surfaces of the substrate 11, and the ground electrodes and the extending portions 16b are electrically connected and fixed by a conductive adhesive or solder.
  • the flat plate portion 16a of the cap 16 can be closely attached to the top plate 15. Since the electrical connection and fixing relationship between the substrate 11 and the semiconductor chip 13, the cap 16 and the substrate 11, and the cap 16 and the motherboard 23 are the same as those of the high-frequency module 10 according to the embodiment, Duplicate descriptions are omitted.
  • the high frequency module 30 according to the present embodiment has the following effects in addition to the effects of the high frequency module 10 according to the above embodiment. That is, in the high-frequency module 30 according to the present embodiment, the semiconductor chip 13 and the isolator 31 are collectively mounted on one substrate 11, but these components are covered with one cap 16. Therefore, when mounting the high-frequency module 30 including the substrate 11, the semiconductor chip 13, the top plate 16, and the isolator 31 to the motherboard 23, a nozzle of a mounter (not shown) is used. By sucking the cap 16 on the flat plate portion 16a, handling becomes possible. For this reason, in the high-frequency module 30, although the semiconductor chip 13 and the isolator 31 having different heights are mixedly mounted, handling during mounting becomes very easy.
  • FIG. 6 (A) is a perspective view showing a high-frequency module according to still another preferred embodiment of the present invention
  • FIG. 6 (B) is a cross-sectional view in a state where the module is mounted on a motherboard.
  • FIG. 7 is an exploded perspective view of a high-frequency module according to still another preferred embodiment of the present invention.
  • Fig. 8 is a cross-sectional view taken along the line X-X shown in Fig. 6 (A).
  • FIG. 9 is a cross-sectional view taken along the line Y--Y shown in FIG. 6 (A).
  • the high-frequency module 40 includes a substrate 41, a plurality of electrodes 42 formed on the back surface of the substrate 41, and a surface of the substrate 41.
  • a semiconductor chip 43 mounted on the semiconductor chip 43 and electronic components 44 such as a capacitor; a heat sink 45 mounted on the upper surface of the semiconductor chip 43; an isolator 47 as a non-reciprocal circuit element; and a heat sink
  • the substrate 41, the semiconductor chip 43, the electronic components 44, and the heat sink 45 constitute a high-frequency amplifier 70.
  • the high-frequency module 40 having such a configuration is mounted on the motherboard 23, as shown in FIG.
  • the substrate 41 belongs to the high-frequency amplifier unit 70, and is formed of a multilayer substrate in which a large number of conductor layers 48 are formed in a laminated structure.
  • An electrode 49 for establishing electrical connection with the semiconductor chip 43 and the electronic component 44 is provided on the surface of the substrate 41, and the electrode 49 is provided inside the substrate 41. It is electrically connected to an electrode 42 formed on the back surface of the substrate 41 via the provided conductor layer 48.
  • the electrode 42 is electrically connected to the electrode 51 provided on the motherboard 23 via the solder 50 as shown in FIG. 6 (().
  • the semiconductor chip 43 is a semiconductor chip that belongs to the high-frequency amplifier 70 and handles a high-frequency signal composed of, for example, a gallium arsenide substrate.
  • the semiconductor chip 43 includes a plurality of electrodes (not shown), and micro bumps 52 made of solder or gold are formed on the electrodes (not shown).
  • the micro-bumps 52 are electrically and mechanically connected to the electrodes 49 formed on the surface of the substrate 41 described above, whereby the electrodes 49 formed on the substrate 41 are connected to the semiconductors.
  • the electrodes (not shown) formed on the chip 43 are electrically connected, and the semiconductor chip 43 is fixed on the surface of the substrate 41 in a flip chip shape. Also, as shown in FIGS. 6 to 9, the gap between the semiconductor chip 43 and the substrate 41 is formed.
  • the underfilling resin 53 is filled and cured between the semiconductor chips 43 and the semiconductor chip 43 and the substrate 41 are firmly fixed. Since the underfilling resin 53 needs to be supplied to the entire gap between the semiconductor chip 43 and the substrate 41, it is preferable to use a low-viscosity resin such as an epoxy resin.
  • the electronic component 44 belongs to the high-frequency amplifier 70, and is composed of, for example, a single capacitor.
  • the height of the upper surface is higher than the height of the upper surface of the semiconductor chip 43.
  • the heat sink 45 belongs to the high-frequency amplifier 70 and is made of metal aluminum. Further, as shown in FIG. 6 to FIG. 8, a protruding portion 45a is provided at a substantially central portion thereof.
  • the protruding portion 45a is formed with a constant width from one end to the other end of the heat sink 45, and can be mass-produced inexpensively and easily by extruding and cutting metal aluminum.
  • the protrusion 45 a of the heat sink 45 is electrically connected to an electrode (not shown) on the upper surface of the semiconductor chip 43 by solder or a conductive adhesive 54. Further, an adhesive 55 is filled between the protrusion 45 a of the heat sink 45 and the substrate 41, whereby the semiconductor chip 43, the heat sink 45 and the substrate 41 are mutually connected.
  • the semiconductor chip 43 While being fixed, the semiconductor chip 43 is protected. As shown in FIG. 9, the adhesive 55 is provided almost over the entire surface between the protrusion 45 a of the heat sink 45 and the substrate 41, whereby the heat sink 45 and the adhesive 55 are provided. The substrate 41 is firmly fixed.
  • the upper surface of the heat sink 45 is set to be substantially the same as the upper surface of the isolator 47, or the upper surface of the heat sink 45 is set slightly higher than the upper surface of the isolator 47.
  • the reason for setting the upper surface of the heat sink 45 to be substantially flush with the upper surface of the isolator 47 or setting it to be slightly higher than the upper surface of the isolator 47 is due to manufacturing errors.
  • the top of 5 is above the isolator 4 7 This is to prevent a gap from being formed between the heat sink 45 and the cap 46 due to the lower surface. Further, since the heat sink 45 includes the protrusion 45 a, a space 69 is formed between the heat sink 45 and the substrate 41. As shown in FIGS.
  • the electronic component 44 is placed in the space 69.
  • the cap 46 is provided over both the high-frequency amplifier section 70 and the isolator section 71, and is formed by bending a band-shaped metal such as aluminum or copper. It has extending portions 46b and 46c and curved portions 46d and 46e. As shown in FIGS. 8 and 9, the flat plate portion 46 a of the cap 46 is formed on the upper surface of the heat sink 45 and the upper surface of the isolator 47 by soldering, conductive adhesive or spot welding. Electrically connected and fixed by 56.
  • the extension 46b of the cap 46 covers the side of the heat sink 45 and the side of the substrate 41, and the extension 46c of the cap 46 covers the side of the isolator 47. I have.
  • the extending portions 46 b and 46 c of the cap 46 abut the side surface of the substrate 41 and the side surface of the isolator 47 so as to sandwich the substrate 41 and the isolator 47.
  • a ground electrode (not shown) is provided on the side surface of the substrate 41, and the ground electrode and the extending portion 46b are electrically connected by a conductive adhesive or solder (not shown). Is connected and fixed.
  • the isolator 47 includes a dielectric substrate 58, a ferrite core 59 made of YIG or the like, and a resonance core provided around the ferrite core 59.
  • a conductor 60 and a permanent magnet 61 are provided, and have a structure in which the whole is covered with a yoke 62 and integrated.
  • the dielectric substrate 58 has an input terminal 63 and a ground terminal (not shown) for connection to the high-frequency amplifier unit 70 side, and is connected to the electrode 51 provided on the motherboard 23.
  • the electrodes 64, 65 provided on the isolator 47 and the electrodes 51 provided on the motherboard 23 are electrically connected via solder 50.
  • the high-frequency amplifier unit 70 and the isolator 47 having the above-described configuration are integrated by bonding their side surfaces to each other to form the high-frequency module 40. Further, the electrical connection between the high-frequency amplifier 70 and the isolator 47 is established by the solder 66.
  • the high-frequency amplifier 70 and the isolator 47 before being integrated are configured as a semi-finished product that can perform a function test and trimming as a whole. Therefore, after the high-frequency amplifier 70 and the isolator 47 are manufactured separately, before they are integrated, an adjustment by a function test, trimming, or the like is performed, and then they can be integrated.
  • the mother board 23 on which the high-frequency module 40 is mounted is provided with the plurality of electrodes 51 as described above, and is electrically connected to the electrodes 42 provided on the substrate 41.
  • a ground electrode 67 is provided on the motherboard 23, and the ground electrode 67 and the lower portions of the extensions 46b and 46c of the cap 46 are connected by solder 68. I have.
  • the protrusion 45 a is provided on the heat sink 45, the protrusion 45 a of the heat sink 45 is provided between the heat sink 45 and the substrate 41.
  • a space 69 for mounting an electronic component 44 having a thickness exceeding the thickness of the semiconductor chip 43 mounted between the semiconductor chip 43 and the substrate 41 is formed. Therefore, according to the high-frequency module 40 according to the present embodiment, even when the thickness of the electronic component 44 is larger than the thickness of the semiconductor chip 43 radiated by the heat sink 45, they are the same. Can be mounted on the substrate 41.
  • the heat sink 45 has the protruding portion 45a, the heat capacity can be increased, thereby improving the heat radiation characteristics.
  • the adhesive 55 is provided between the protruding portion 45 a and the semiconductor chip 43 and the substrate 41, the protruding portion 45 a of the heat sink 45 and the adhesive of the semiconductor chip 43 are provided. Adhesion can also be made between the side and the bonding strength.
  • the protrusion 45 a of the heat sink 45 extends from one end to the other end. Since the heat sink 45 is formed in a rail shape, the heat sink 45 can be easily manufactured by extruding and cutting metal aluminum or the like, and the manufacturing cost can be reduced.
  • the semiconductor chip 43 since the extension portions 46b and 46c of the cap 46 are soldered to the ground electrode 67 on the motherboard 23, the semiconductor chip 43 generates The heat is conducted to the ground electrode 67 on the motherboard 23 through the heat sink 45 and the cap 13.
  • the heat sink 45 and the cap 46 constitute a heat absorber having a large heat capacity, and the absorbed heat is transmitted to the ground electrode 67, so that good heat radiation is performed.
  • the extension 46b of the cap 46, which is in contact with the heat sink 45 and the board 41, of the extension 46b and 46c is a mother board 23
  • the extension portions 46 b and 46 c may be soldered to the motherboard 23, the heat radiation performance is further improved.
  • the cap 46 and the yoke 62 of the isolator 47 are joined by a conductive adhesive or solder 56, the semiconductor chip 43 The heat generated by the heat transfer can be transmitted to the yoke 62 via the heat sink 45 and the cap 46, thereby improving the heat radiation performance.
  • the narrow curved vertical portions 46 d and 46 e are provided on both sides of the cap 46, so that the cap 4 is provided. 6 is prevented and the mechanical strength is improved. Further, since the bent widths of these bent portions 46 d and 46 e are small, the high-frequency amplifier 70 and the isolator 67 covered by the cap 46 can be visually observed. In addition, since the high-frequency amplifier 70 and the isolator 67 covered by the cap 46 can be visually observed, the fitting state between the high-frequency amplifier 70 and the isolator 47 and the cap 46 can be directly checked.
  • the isolator 47 is not mounted on the substrate 41, but the side surface of the substrate 41.
  • the high-frequency module 40 is fixed so that it is in contact with the substrate, so the height of the entire high-frequency module 40 is not the height of the isolators 47 plus the height of the substrate 41, but is almost the height of the isolators 47 only.
  • the thickness can be reduced. For this reason, a high-frequency module suitable for use in a mobile phone or the like can be provided.
  • the cap 46 since the cap 46 is in contact with the isolator 47, the heat generated by the semiconductor chip 43 is also absorbed by the isolator 47 through the cap 46. The heat dissipation performance is improved.
  • the high-frequency amplifier unit 70 and the isolator 47 are joined, and the high-frequency amplifier unit 70 and the isolator 47 that are joined are covered with the cap 46 to constitute the high-frequency module 40.
  • the present invention can be embodied as a high-frequency module 80 having a structure obtained by removing the isolator 47 from the high-frequency module 40. is there.
  • the length of one side of the high-frequency amplifier 70 and the length of one side of the isolator 47 are generally different from each other.
  • the planar shape of the isolator 47 is a rectangle of L 1 XL 2 and the length of one side L 2 is the high-frequency amplifier unit 7. Because the length of one side of L is matched to L 2, The whole shape of the high-frequency module 40 can be made square. This not only facilitates the handling of the high-frequency module 40, but also eliminates the need for the cap 46 to have a complicated shape, thereby reducing manufacturing costs.
  • the length of one side of the isolator 47 is equal to the length L 2 of one side of the high-frequency amplifier 70, the length is extended.
  • a permanent magnet 61 having a large shape can be used, and as a result, a larger magnetic force can be generated with the same thickness.
  • the thickness of the permanent magnet 61 required to obtain the required magnetic force can be reduced, so that the entire high-frequency module 40 can be reduced in thickness.
  • the length of one side of the isolator 47 matches the length L 2 of one side of the high-frequency amplifier 70, and the whole shape of the high-frequency module 40 can be made square by simply joining them. Therefore, it is not necessary to mount the isolator 47 on the substrate 41.
  • the high-frequency module according to the present invention has excellent heat radiation characteristics, is small in size, and has low manufacturing costs. Therefore, the high-frequency module is suitable for application to various communication devices, particularly mobile phones.

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Abstract

A high frequency module capable of effectively dissipating the heat generated by a semiconductor device. The high frequency module comprises a substrate (11), a semiconductor chip (13) fixed on the substrate (11), a top plate (15) placed in contact with the upper surface (13a) of the semiconductor chip (13), and a cap (16) placed in contact with the upper surface of the top plate (15), wherein the cap (16) comprises a flat plate part (16a) and extending parts (16b) extending downward from both ends of the flat plate part (16a). The extending parts (16b) is in contact with the sides of the substrate (11). Thus, the extending parts (16b) are reliably in contact with the sides of the substrate (11) with a wide contact area even if the height of the semiconductor chip (13) involves some variation or the shape of the cap (16) involves some manufacturing variation. Therefore, the heat generated by the semiconductor chip (13) is effectively dissipated to the substrate (11).

Description

明細: 高周波モジュール 技術分野  Item: High-frequency module Technical field
本発明は、 高周波帯で使用される高周波モジュール、 特に高周波用 の半導体チップを搭載したパワーアンプモジュール等の高周波モジュ —ルに関する。 従来の技術  The present invention relates to a high-frequency module used in a high-frequency band, and particularly to a high-frequency module such as a power amplifier module equipped with a high-frequency semiconductor chip. Conventional technology
従来の高周波半導体チップを搭載したモジュールまたはパッケージ と して、 例えば特表平 1 0— 5 0 1 1 0 2号公報に開示されたものが 知られている。 これはパッケージを構成する基板に、 ワイヤ一ボンデ ィングゃフリ ップチップによって半導体チップを実装し、 さらに金属 キヤップを被せることによって高周波モジュールを構成している。 また、 他の高周波モジュールの従来例と して、 米国特許第 5 8 3 1 8 3 6号公報に開示されたものがある。 これは半導体チップをフリ ッ プチップによって基板に搭載し、 半導体チップの背面と金属キヤップ の天板部とを当接させる形で高周波モジュールを構成したものである 0 2. Description of the Related Art As a conventional module or package on which a high-frequency semiconductor chip is mounted, for example, a module or package disclosed in Japanese Patent Application Laid-Open No. H10-501102 is known. In this method, a high-frequency module is constructed by mounting a semiconductor chip on a substrate that constitutes a package using a wire-bonding flip-chip, and then covering it with a metal cap. Another conventional high-frequency module is disclosed in US Pat. No. 5,831,836. This is formed by constituting the high-frequency module in the form which is mounted on a substrate of semiconductor chips by Flip Puchippu, abuts a top plate portion of the rear metal cap of the semiconductor chip 0
図 1は、 米国特許第 5 8 3 1 8 3 6号公報に開示された従来の高周 波モジュールを模式的に示す断面図である。  FIG. 1 is a cross-sectional view schematically showing a conventional high-frequency module disclosed in US Pat. No. 5,831,836.
図 1 に示されるように、 従来の高周波モジュール 1は、 基板 2 と、 半導体チップ 3 と、 金属キャップ 4 とを備える。 金属キャップ 4はヒ — 卜シンクの役割をを兼ねている。 半導体チップ 3はフリ ップチップ により、 すなわち、 半導体チップ 3の底面の外部接続用の電極端子に 半田や金によりマイクロバンプ 5を形成し、 該マイクロバンプ 5によ つて基板 2 と半導体チップ 3とを電気的に接続している。 また、 通常 、 基板 2 と半導体チップ 3 との隙間には、 マイクロバンプ 5を包むよ うに、 アンダーフィ リングと称される樹脂 6が満たされ、 硬化されて いる。 金属キャップ 4は、 その天板部 4 b力' 半導体チップ 3の上面 に導電性接着剤 7により固着され、 周囲の縁 4 aは、 基板 2上の電極 (図示せず） と導電性接着剤または半田 8により固定される。 As shown in FIG. 1, a conventional high-frequency module 1 includes a substrate 2, a semiconductor chip 3, and a metal cap 4. The metal cap 4 also serves as a heat sink. The semiconductor chip 3 is formed by a flip chip, that is, a microbump 5 is formed by solder or gold on an external connection electrode terminal on the bottom surface of the semiconductor chip 3, and the substrate 2 and the semiconductor chip 3 are electrically connected by the microbump 5. Connected. Usually, a microbump 5 is wrapped in the gap between the substrate 2 and the semiconductor chip 3. Thus, the resin 6 called underfilling is filled and cured. The metal cap 4 is fixed to the top plate portion 4 b of the semiconductor chip 3 with a conductive adhesive 7, and the peripheral edge 4 a is connected to an electrode (not shown) on the substrate 2 and the conductive adhesive. Or fixed by solder 8.
図 1に示される従来の高周波モジュールには、 次のよ うな課題があ つた。  The conventional high-frequency module shown in Fig. 1 had the following problems.
まず第一に、 半導体チップ 3 と基板 2 との間の接続はマイクロバン プ 5によって行われているが、 かかるマイクロバンプ 5の高さは製造 条件によって多少のばらつきを生じる。 その結果、 半導体チップ 3 と 基板 2 との間隔は製品ごとにばらつき、 このばらつきにより、 半導体 チップ 3上に固定される金属キヤップ 4の縁 4 aが基板 2の表面に届 かなかったり、 逆に、 金属キャップ 4の天板部 4 bが半導体チップ 3 の上面に届かなかったりするという問題が生じていた。  First, the connection between the semiconductor chip 3 and the substrate 2 is made by the microbump 5, but the height of the microbump 5 slightly varies depending on manufacturing conditions. As a result, the distance between the semiconductor chip 3 and the substrate 2 varies from product to product, and due to this variation, the edge 4 a of the metal cap 4 fixed on the semiconductor chip 3 does not reach the surface of the substrate 2, or conversely. However, there has been a problem that the top plate portion 4b of the metal cap 4 does not reach the upper surface of the semiconductor chip 3.
第二に、 金属キヤッブ 4の縁 4 bの下端を天板部 4 bに対して完全 に平行に形成することは困難であり、 金属キャップ 4の縁 4 bの下端 は天板部 4 bに対して僅かな角度を持って形成される場合がある。 こ のような金属キヤップ 4を用いた場合、 金属キヤップ 4の縁 4 aの下 端が基板 2に対して斜めに当たるため、 金属キヤップ 4の縁 4 aの下 端と基板 2 との間には隙間ができるという問題が生じていた。  Second, it is difficult to form the lower end of the edge 4b of the metal cap 4 completely parallel to the top plate 4b, and the lower end of the edge 4b of the metal cap 4 is attached to the top plate 4b. It may be formed at a slight angle to the case. When such a metal cap 4 is used, since the lower end of the edge 4 a of the metal cap 4 hits the substrate 2 at an angle, there is a gap between the lower end of the edge 4 a of the metal cap 4 and the substrate 2. There has been a problem that a gap is formed.
これらの問題はいずれも、 金属キャップ 4を介した半導体チップ 3 から基板 2への放熱効率を低下させる。 特に、 半導体チップ 3が取り 扱う信号の電力が大きい場合、 半導体チップ 3から生じる熱が大きい ため、 金属キヤップ 4を介した半導体チップ 3から基板 2への放熱は 重要であり、 このため、 金属キャップ 4を介した半導体チップ 3から 基板 2への放熱効率の低下は大きな問題となる。  All of these problems reduce the efficiency of heat dissipation from the semiconductor chip 3 to the substrate 2 via the metal cap 4. In particular, when the power of signals handled by the semiconductor chip 3 is large, the heat generated from the semiconductor chip 3 is large, so that heat dissipation from the semiconductor chip 3 to the substrate 2 through the metal cap 4 is important, and therefore, the metal cap The reduction of the heat radiation efficiency from the semiconductor chip 3 to the substrate 2 via the 4 becomes a serious problem.
したがって本発明の目的は、 改良された高周波モジュールを提供す ることである。  Accordingly, it is an object of the present invention to provide an improved high frequency module.
また、 本発明の他の目的は、 半導体チップより発生する熱を効果的 に放出することができる高周波モジュールを提供することである。 発明の開示 Another object of the present invention is to provide a high-frequency module capable of effectively releasing heat generated from a semiconductor chip. Disclosure of the invention
本発明のかかる目的は、 マザ一ボードに搭載される高周波モジユー ルであって、 基板と、 前記基板上に固定された半導体チップと、 前記 半導体チップの上方に設けられたキャップとを備え、 前記キャップは 、 前記半導体チップから発せられる熱が供給される平板部及び前記平 板部の両端から下方へ延びる延出部とを備え、 前記キヤップの前記延 出部は、 前記基板の側面に当接していることを特徴とする高周波モジ ユールによつて達成される。  An object of the present invention is a high-frequency module mounted on a mother board, comprising: a substrate; a semiconductor chip fixed on the substrate; and a cap provided above the semiconductor chip. The cap includes a flat plate portion to which heat generated from the semiconductor chip is supplied, and an extending portion extending downward from both ends of the flat plate portion. The extending portion of the cap abuts on a side surface of the substrate. This is achieved by a high-frequency module characterized in that:
本発明によれば、 キャップの延出部が基板の側面に当接しているの で、 半導体チップの高さに多少のばらつきがあったり、 キャップの形 状に多少の製造ばらつきがあったり しても、 確実かつ広い面積にて、 キャップの延出部と基板の側面とを接触させることが可能となる。 こ のため、 半導体チップからキャップの平板部に供給された熱が、 キヤ ップの延出部を介して、 基板へ効果的に放出される。  According to the present invention, since the extension of the cap is in contact with the side surface of the substrate, there is some variation in the height of the semiconductor chip, and there is some manufacturing variation in the shape of the cap. Also, the extended portion of the cap can be brought into contact with the side surface of the substrate in a reliable and large area. For this reason, the heat supplied from the semiconductor chip to the flat plate portion of the cap is effectively released to the substrate through the extended portion of the cap.
本発明の好ましい実施態様においては、 前記キヤップの前記延出部 力 S、 前記マザ一ボード上に設けられた電極に接続されている。  In a preferred embodiment of the present invention, the extension portion force S of the cap is connected to an electrode provided on the motherboard.
本発明の好ましい実施態様によれば、 キャップの延出部が、 マザ一 ボード上に設けられた電極に接続されているので、 半導体チップが発 生する熱を、 熱容量の大きいマザ一ボードへ効果的に放出することが できる。 このため、 放熱特性が一層向上する。  According to the preferred embodiment of the present invention, the extension of the cap is connected to the electrode provided on the motherboard, so that the heat generated by the semiconductor chip is applied to the motherboard having a large heat capacity. Can be released. Therefore, the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記半導体チップと 前記キヤップの前記平板部との間に設けられた天板をさらに備える。 本発明のさらに好ましい実施態様によれば、 半導体チップとキヤッ プの平板部との間に天板が設けられているので、 天板がヒートシンク と しての役割を果たし、 放熱特性が一層向上する。  In a further preferred aspect of the present invention, the apparatus further comprises a top plate provided between the semiconductor chip and the flat portion of the cap. According to a further preferred embodiment of the present invention, since the top plate is provided between the semiconductor chip and the flat plate portion of the cap, the top plate serves as a heat sink, and the heat radiation characteristics are further improved. .
本発明のさらに好ましい実施態様においては、 前記天板の厚みが、 前記キヤップの前記平板部の厚みよ り も厚い。  In a further preferred aspect of the present invention, the thickness of the top plate is larger than the thickness of the flat portion of the cap.
本発明のさらに好ましい実施態様によれば、 天板の厚みがキヤップ の平板部の厚みより も厚いことから、 天板の熱容量が大きく、 そのた め、 放熱特性が一層向上する。 According to a further preferred embodiment of the present invention, the thickness of the top plate is Since the thickness of the top plate is thicker than that of the flat plate, the heat capacity of the top plate is large, and the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記天板がアルミ二 ゥムを含む。  In a further preferred aspect of the present invention, the top plate includes aluminum.
本発明のさらに好ましい実施態様によれば、 天板がアルミニウムを 含んでいることから、 導電性、 熱伝導性、 価格の面で有利であり、 半 導体チップからの放熱が良好に行われ、 製造コス トを低減できる。 本発明のさらに好ましい実施態様においては、 前記半導体チップが 、 前記基板上にフリ ップチップ状に搭載されている。  According to a further preferred embodiment of the present invention, since the top plate contains aluminum, it is advantageous in terms of conductivity, heat conductivity, and price, and heat radiation from the semiconductor chip is satisfactorily performed. Costs can be reduced. In a further preferred aspect of the present invention, the semiconductor chip is mounted on the substrate in a flip chip shape.
本発明のさらに好ましい実施態様によれば、 半導体チップが基板上 にフリ ップチップ状に搭載されているので、 高周波モジュール全体の サイズを小型化することが可能となる。  According to a further preferred embodiment of the present invention, since the semiconductor chip is mounted on the substrate in a flip-chip shape, the size of the entire high-frequency module can be reduced.
本発明のさらに好ましい実施態様においては、 前記基板上に搭載さ れた非可逆素子をさらに備え、 前記非可逆素子の上面が、 前記キヤッ プの前記平板部と接している。  In a further preferred aspect of the present invention, the device further comprises a non-reciprocal element mounted on the substrate, and an upper surface of the non-reciprocal element is in contact with the flat portion of the cap.
本発明のさらに好ましい実施態様によれば、 非可逆素子の上面がキ ャップの平板部と接しているため、 非可逆素子自体がヒートシンク と して機能する。 このため、 放熱特性が一層向上する。  According to a further preferred embodiment of the present invention, since the upper surface of the non-reciprocal element is in contact with the flat plate portion of the cap, the non-reciprocal element itself functions as a heat sink. Therefore, the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記非可逆素子の側 面が、 前記キャップの前記延出部と接している。  In a further preferred aspect of the present invention, a side surface of the irreversible element is in contact with the extension of the cap.
本発明のさらに好ましい実施態様によれば、 非可逆素子の側面がさ らにキャップの延出部と接しているため、 非可逆素子とキャップとの 接触面積が広く、 放熱特性が一層向上する。  According to a further preferred embodiment of the present invention, since the side surface of the non-reciprocal element further contacts the extended portion of the cap, the contact area between the non-reciprocal element and the cap is large, and the heat radiation characteristics are further improved.
本発明の前記目的はまた、 マザーボ一ドに搭載される高周波モジュ —ルであって、 基板と、 前記基板上に固定された半導体チップと、 前 記半導体チップに当接する突出部を有するヒートシンクと、 前記ヒー トシンクに供給された熱を前記基板に放出する手段とを備える高周波 モジュールによつて達成される。  The object of the present invention is also a high-frequency module mounted on a motherboard, comprising: a substrate; a semiconductor chip fixed on the substrate; and a heat sink having a protrusion abutting on the semiconductor chip. And a means for releasing heat supplied to the heat sink to the substrate.
本発明によれば、 ヒートシンクに突出部が設けられ、 かかる突出部 と半導体チップとが当接しているので、 突出部によってヒー トシンク 全体の熱容量を増大させる。 このため、 半導体チップが発生する熱が 基板へ効果的に放出される。 さらに、 ヒー トシンク と半導体チップと は突出部を介して当接しているので、 ヒー トシンクのうち突出部以外 の部分においては、 基板との間にスペースが形成される。 このため、 かかるスペースを利用して、 他の電子部品等を基板に搭載することが 可能となる。 According to the present invention, the protrusion is provided on the heat sink, and the protrusion is provided. Since the semiconductor chip and the semiconductor chip are in contact with each other, the protrusion increases the heat capacity of the entire heat sink. Therefore, heat generated by the semiconductor chip is effectively released to the substrate. Furthermore, since the heat sink and the semiconductor chip are in contact with each other via the protrusion, a space is formed between the heat sink and the substrate in a portion other than the protrusion. For this reason, it is possible to mount other electronic components and the like on the substrate by using such a space.
本発明の好ましい実施態様においては、 前記ヒー トシンクの前記突 出部が、 前記ヒ一トシンクの一端から他端にわたって形成されている 本発明の好ましい実施態様によれば、 ヒー トシンクの突出部が、 ヒ 一トシンクの一端から他端にわたって形成されているので、 ヒ一 トシ ンクの成形が容易であり、 コス トを低減することが可能となる。 しか も、 ヒー トシンクの突出部が、 ヒートシンクの一端から他端にわたつ て形成されていることから、 半導体チップが搭載されている部分以外 に部分においても、 基板とヒー トシンクの突出部とが近接するので、 かかる近接部分に接着剤等を導入すれば、 基板とヒートシンクとが強 固に固定することができる。  In a preferred embodiment of the present invention, according to a preferred embodiment of the present invention, wherein the protrusion of the heat sink is formed from one end to the other end of the heat sink. Since the heat sink is formed from one end to the other end, the heat sink can be easily formed, and the cost can be reduced. However, since the protrusion of the heat sink is formed from one end to the other end of the heat sink, the substrate and the protrusion of the heat sink are not limited to the portion other than the portion where the semiconductor chip is mounted. Since they are close to each other, if an adhesive or the like is introduced into such close portions, the substrate and the heat sink can be firmly fixed.
本発明のさらに好ましい実施態様においては、 前記ヒートシンクが 、 金属アルミニウムの押し出し成形によって製造される。  In a further preferred embodiment of the present invention, the heat sink is manufactured by extrusion of metallic aluminum.
本発明のさらに好ましい実施態様によれば、 ヒー トシンク力；、 金属 アルミニウムの押し出し成形によって製造されることから、 ヒートシ ンクの製造コス トを抑えることが可能となる。  According to a further preferred embodiment of the present invention, since the heat sink force is manufactured by extruding metal aluminum, the manufacturing cost of the heat sink can be reduced.
本発明のさらに好ましい実施態様においては、 前記手段が、 前記ヒ 一トシンクを覆う平板部及び前記平板部の両端から下方へ延びる延出 部とを備えるキヤッブによって構成される。  In a further preferred aspect of the present invention, the means is constituted by a cab having a flat plate portion covering the heat sink and extending portions extending downward from both ends of the flat plate portion.
本発明のさらに好ましい実施態様によれば、 ヒートシンクに供給さ れた熱を基板に放出する手段が、 ヒートシンクを覆う平板部及び平板 部の両端から下方へ延びる延出部とを備えるキャップによって構成さ れることから、 ヒー トシンクに蓄えられた熱は、 キャ ップの平板部か ら延出部を介して基板に放出される。 According to a further preferred embodiment of the present invention, the means for releasing the heat supplied to the heat sink to the substrate is constituted by a cap having a flat portion covering the heat sink and extending portions extending downward from both ends of the flat portion. As a result, the heat stored in the heat sink is released from the flat plate portion of the cap to the substrate via the extended portion.
本発明のさらに好ましい実施態様においては、 前記キヤップの前記 延出部は、 前記基板の第 1の側面に当接している。  In a further preferred aspect of the present invention, the extension of the cap is in contact with a first side surface of the substrate.
本発明のさらに好ましい実施態様によれば、 キャップの延出部は、 基板の第 1の側面に当接していることから、 半導体チップの高さに多 少のばらつきがあったり、 キヤップの形状に多少の製造ばらつきがあ つたり しても、 確実かつ広い面積にて、 キャップの延出部と基板の第 1の側面とを接触させることが可能となる。 このため、 半導体チップ からヒー トシンクを介してキャップの平板部に供給された熱が、 キヤ ップの延出部を介して、 基板へ効果的に放出される。  According to a further preferred embodiment of the present invention, since the extension of the cap is in contact with the first side surface of the substrate, the height of the semiconductor chip varies slightly, or the shape of the cap is changed. Even if there is some manufacturing variation, the extended portion of the cap and the first side surface of the substrate can be brought into contact with each other reliably and over a large area. Therefore, the heat supplied from the semiconductor chip to the flat plate portion of the cap via the heat sink is effectively released to the substrate via the extended portion of the cap.
本発明のさらに好ましい実施態様においては、 前記キヤップの前記 延出部が、 前記マザ一ボード上に設けられた電極に接続されている。 本発明のさらに好ましい実施態様によれば、 キャ ップの延出部が、 マザ一ボード上に設けられた電極に接続されているので、 半導体チッ プが発生する熱を、 熱容量の大きいマザ一ボードへ効果的に放出する ことができる。 このため、 放熱特性が一層向上する。  In a further preferred aspect of the present invention, the extension of the cap is connected to an electrode provided on the motherboard. According to a further preferred embodiment of the present invention, the extension of the cap is connected to the electrode provided on the motherboard, so that the heat generated by the semiconductor chip is removed from the motherboard having a large heat capacity. It can be effectively released to the board. Therefore, the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記ヒ一トシンクと 前記基板との間に形成されるスペースに搭載された電子部品をさらに 備える。  In a further preferred aspect of the present invention, the electronic device further comprises an electronic component mounted in a space formed between the heat sink and the substrate.
本発明のさらに好ましい実施態様によれば、 ヒー トシンクのうち突 出部以外の部分と基板との間に形成されたスペースを有効利用するこ とができる。  According to a further preferred embodiment of the present invention, it is possible to effectively utilize a space formed between a portion of the heat sink other than the protruding portion and the substrate.
本発明のさらに好ましい実施態様においては、 前記電子部品の厚み 力 前記半導体チップの厚みより も厚い。  In a further preferred aspect of the present invention, the thickness of the electronic component is greater than the thickness of the semiconductor chip.
本発明のさらに好ましい実施態様によれば、 ヒートシンクのうち突 出部以外の部分と基板との間に形成されたスペースが、 ヒー トシンク の突出部と基板との間に形成されたスペースより も広いことを利用し て、 半導体チップの厚みよ り も厚い電子部品を搭載することが可能と なる。 According to a further preferred embodiment of the present invention, a space formed between the portion of the heat sink other than the protrusion and the substrate is wider than a space formed between the protrusion of the heat sink and the substrate. This makes it possible to mount electronic components that are thicker than the semiconductor chip. Become.
本発明のさらに好ましい実施態様においては、 非可逆素子をさらに 備え、 前記非可逆素子の上面が、 前記キャップの前記平板部と接して いる。  In a further preferred aspect of the present invention, the device further comprises a non-reciprocal element, and an upper surface of the non-reciprocal element is in contact with the flat portion of the cap.
本発明のさらに好ましい実施態様によれば、 非可逆素子の上面がキ ヤップの平板部と接しているため、 非可逆素子自体がヒートシンクと して機能する。 このため、 放熱特性が一層向上する。  According to a further preferred embodiment of the present invention, since the upper surface of the non-reciprocal element is in contact with the flat plate portion of the cap, the non-reciprocal element itself functions as a heat sink. Therefore, the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記非可逆素子の第 1の側面が、 前記基板の前記第 1の側面と対向する第 2の側面と当接 している。  In a further preferred aspect of the present invention, the first side surface of the non-reciprocal element is in contact with a second side surface of the substrate facing the first side surface.
本発明のさらに好ましい実施態様によれば、 非可逆素子が基板上に 搭載されているのではなく、 非可逆素子の第 1の側面が基板の第 2の 側面と当接するように固定されているので、 高周波モジュール全体の 高さを、 非可逆素子の高さに基板の高さ加えた高さではなく、 ほぼ非 可逆素子だけの高さに設定することができ、 薄型化が達成できる。 こ のため、 携帯電話等に使用する場合に好適な高周波モジュールが提供 できる。  According to a further preferred embodiment of the present invention, the irreversible element is not mounted on the substrate, but is fixed so that the first side of the irreversible element is in contact with the second side of the substrate. Therefore, the height of the entire high-frequency module can be set to substantially the height of only the nonreciprocal element, not to the height of the nonreciprocal element plus the height of the substrate, and a reduction in thickness can be achieved. Therefore, a high-frequency module suitable for use in a mobile phone or the like can be provided.
本発明のさらに好ましい実施態様においては、 前記基板の前記第 2 の側面の長さと、 前記非可逆素子の前記第 1の側面の長さが実質的に 等しい。  In a further preferred aspect of the present invention, the length of the second side surface of the substrate is substantially equal to the length of the first side surface of the irreversible element.
本発明のさらに好ましい実施態様によれば、 基板の第 2の側面の長 さと、 非可逆素子の第 1の側面の長さが実質的に等しいので、 高周波 モジュール全体の形状を四角形とすることができる。 このため、 高周 波モジュールの取り扱いが容易となるだけでなく、 キヤップを複雑な 形状とする必要がなく、 製造コス トを削減できる。  According to a further preferred embodiment of the present invention, since the length of the second side surface of the substrate is substantially equal to the length of the first side surface of the non-reciprocal element, the shape of the high-frequency module as a whole may be square. it can. This not only makes it easier to handle the high-frequency module, but also eliminates the need for the cap to have a complicated shape, thereby reducing manufacturing costs.
本発明のさらに好ましい実施態様においては、 前記非可逆素子の第 1 の側面と対向する第 2の側面が、 前記キヤ ップの前記延出部に当接 している。  In a further preferred aspect of the present invention, a second side surface of the non-reciprocal element opposite to the first side surface is in contact with the extension of the cap.
本発明のさらに好ましい実施態様によれば、 非可逆素子の第 2の側 面がキヤップの延出部と接しているため、 非可逆素子とキャップとの 接触面積が広く、 放熱特性が一層向上する。 According to a further preferred embodiment of the present invention, the second side of the irreversible element Since the surface is in contact with the extended portion of the cap, the contact area between the irreversible element and the cap is large, and the heat radiation characteristics are further improved.
本発明のさらに好ましい実施態様においては、 前記キャップが、 前 記平板部の他の両端から下方へ延びる曲成部を有する。  In a further preferred aspect of the present invention, the cap has a curved portion extending downward from the other ends of the flat plate portion.
本発明のさらに好ましい実施態様によれば、 キャップに平板部の他 の両端から下方へ延びる曲成部が形成されているので、 キヤップの機 械的強度が向上する。  According to a further preferred embodiment of the present invention, the bent portion extending downward from the other ends of the flat plate portion is formed on the cap, so that the mechanical strength of the cap is improved.
本発明のさらに好ましい実施態様においては、 前記キャップの前記 平板部から前記曲成部の端部までの長さが、 前記キヤップの前記平板 部から前記延出部の端部までの長さより も短い。  In a further preferred aspect of the present invention, a length from the flat plate portion of the cap to an end of the bent portion is shorter than a length from the flat plate portion of the cap to an end of the extension portion. .
本発明のさらに好ましい実施態様においては、 前記曲成部は前記基 板の側面を覆うことなく、 前記曲成部の前記端部と前記基板との間に 隙間を形成している。  In a further preferred aspect of the present invention, the bent portion forms a gap between the end portion of the bent portion and the substrate without covering a side surface of the substrate.
本発明のさらに好ましい実施態様によれば、 曲成部の端部と基板と の間に隙間が形成されていることから、 かかる隙間を介して高周波モ ジュールの内部を目視することが可能となる。  According to a further preferred embodiment of the present invention, since a gap is formed between the end of the bent portion and the substrate, it is possible to visually check the inside of the high-frequency module through the gap. .
本発明の前記目的はまた、 第 1及び第 2の側面を有する基板、 前記 基板上に搭載された半導体チップ、 及び前記半導体チップ上に設けら れたヒートシンクを含む高周波アンプ部と、 第 1及び第 2の側面を有 する非可逆素子と、 平板部、 第 1の延出部、 及び第 2の延出部を有す るキャップとを備え、 前記高周波アンプ部と前記非可逆素子とは、 前 記基板の前記第 1の側面と前記非可逆素子の前記第 1の側面とが当接 するよ うに固定されており、 前記キャップと前記高周波アンプ部及び 前記非可逆素子とは、 前記キヤップの前記平板部が少なく とも前記高 周波アンプ部の前記ヒートシンクに当接し、 前記キャ ップの前記第 1 の延出部が前記基板の前記第 2の側面に当接し、 前記キャップの前記 第 2の延出部が前記非可逆素子の前記第 2の側面に当接するように固 定されていることを特徴とする高周波モジュールによって達成される 本発明によれば、 非可逆素子が、 高周波アンプ部を構成する基板上 に搭載されているのではなく、 非可逆素子の第 1の側面と基板の第 1 の側面とが当接するように固定されているので、 高周波モジュール全 体の高さを、 非可逆素子の高さに基板の高さ加えた高さではなく、 ほ ぼ非可逆素子だけの高さに設定することができ、 薄型化が達成できる 。 このため、 携帯電話等に使用する場合に好適な高周波モジュールが 提供できる。 また、 高周波アンプ部と非可逆素子とが、 一体的にキヤ ップで覆われているので、 ハンドリ ングの容易な高周波モジュールを 提供することが可能となる。 The object of the present invention is also a high-frequency amplifier including a substrate having first and second side surfaces, a semiconductor chip mounted on the substrate, and a heat sink provided on the semiconductor chip; A non-reciprocal element having a second side face, and a cap having a flat plate portion, a first extension portion, and a second extension portion, wherein the high-frequency amplifier portion and the non-reciprocal element The first side surface of the substrate and the first side surface of the non-reciprocal element are fixed so as to be in contact with each other, and the cap, the high-frequency amplifier unit, and the non-reciprocal element are connected to each other by the cap. The flat portion contacts at least the heat sink of the high-frequency amplifier portion, the first extension of the cap contacts the second side surface of the substrate, and the second portion of the cap The extension is the second of the irreversible element. It is achieved by a high-frequency module, characterized in that it is fixed so as to contact the side surface According to the present invention, the non-reciprocal element is not mounted on the substrate constituting the high-frequency amplifier, but is fixed so that the first side of the non-reciprocal element and the first side of the substrate abut. The height of the entire high-frequency module can be set to almost the height of the non-reciprocal element, not the height of the non-reciprocal element plus the board height. Can be achieved. Therefore, a high-frequency module suitable for use in a mobile phone or the like can be provided. Further, since the high-frequency amplifier section and the non-reciprocal element are integrally covered with the cap, it is possible to provide a high-frequency module that is easy to handle.
本発明の好ましい実施態様においては、 前記基板の前記第 1の側面 の長さと前記非可逆素子の前記第 1の側面の長さが実質的に等しい。 本発明の好ましい実施態様によれば、 基板の第 1の側面の長さと、 非可逆素子の第 1の側面の長さが実質的に等しいので、 高周波モジュ ール全体の形状を四角形とすることができる。 このため、 高周波モジ ユールの取り扱いが容易となるだけでなく、 キャップを複雑な形状と する必要がなく、 製造コス トを削減できる。  In a preferred embodiment of the present invention, a length of the first side surface of the substrate is substantially equal to a length of the first side surface of the non-reciprocal element. According to a preferred embodiment of the present invention, since the length of the first side surface of the substrate is substantially equal to the length of the first side surface of the non-reciprocal element, the shape of the entire high-frequency module is square. Can be. This not only facilitates the handling of the high-frequency module, but also eliminates the need for the cap to have a complicated shape, thereby reducing manufacturing costs.
本発明のさらに好ましい実施態様においては、 前記非可逆素子の前 記第 1の側面の長さが、 前記非可逆素子の前記第 1の側面から前記第 2の側面までの距離より も長い。  In a further preferred aspect of the present invention, the length of the first side surface of the irreversible element is longer than a distance from the first side surface to the second side surface of the irreversible element.
本発明のさらに好ましい実施態様によれば、 非可逆素子の第 1の側 面の長さを、 基板の前記第 1の側面の長さと一致させるベく、 非可逆 素子の第 1の側面から第 2の側面までの距離より も長く なるように構 成しているので、 非可逆素子に含まれる永久磁石と して、 平面方向に おいて大きな形状を有する永久磁石を用いることができ、 その結果、 同じ厚みでより大きな磁力を発生することが可能となる。 これにより 、 必要な磁力を得るために必要とされる永久磁石の厚みを薄くするこ とができるので、 高周波モジュール全体の厚みを薄くすることが可能 となる。  According to a further preferred embodiment of the present invention, the length of the first side face of the non-reciprocal element is made to match the length of the first side face of the substrate. Since it is configured to be longer than the distance to the side surface of 2, the permanent magnet included in the irreversible element can be a permanent magnet that has a large shape in the plane direction, and as a result, However, it is possible to generate a larger magnetic force with the same thickness. As a result, the thickness of the permanent magnet required to obtain the required magnetic force can be reduced, so that the thickness of the entire high-frequency module can be reduced.
本発明のさらに好ましい実施態様においては、 前記キヤップの前記 第 1の延出部は、 前記高周波モジュールが搭載されるマザ一ボードに 電気的に接続される。 In a further preferred embodiment of the present invention, The first extension portion is electrically connected to a mother board on which the high-frequency module is mounted.
本発明のさらに好ましい実施態様によれば、 キヤップの第 1の延出 部が高周波モジュールが搭載されるマザ一ボードに電気的に接続され ているので、 半導体チップが発生する熱を、 熱容量の大きいマザ一ボ ードへ効果的に放出することができる。 また、 キャップを介して、 半 導体チップに所定の電位を与えることが可能となる。  According to a further preferred embodiment of the present invention, the first extension of the cap is electrically connected to the mother board on which the high-frequency module is mounted, so that the heat generated by the semiconductor chip has a large heat capacity. It can be effectively released to the motherboard. In addition, a predetermined potential can be applied to the semiconductor chip via the cap.
本発明のさらに好ましい実施態様においては、 前記非可逆素子が上 面をさらに有し、 前記キヤップの前記平板部が前記非可逆素子の前記 上面に当接している。  In a further preferred aspect of the present invention, the irreversible element further has an upper surface, and the flat plate portion of the cap is in contact with the upper surface of the irreversible element.
本発明のさらに好ましい実施態様によれば、 キヤップの平板部が非 可逆素子の上面に当接していることから、 非可逆素子がヒートシンク として機能する。 このため、 放熱特性が向上する。 図面の簡単な説明  According to a further preferred embodiment of the present invention, since the flat plate portion of the cap is in contact with the upper surface of the non-reciprocal device, the non-reciprocal device functions as a heat sink. Therefore, the heat radiation characteristics are improved. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 米国特許第 5 8 3 1 8 3 6号公報に開示された従来の高周 波モジュールを模式的に示す断面図である。  FIG. 1 is a cross-sectional view schematically showing a conventional high-frequency module disclosed in US Pat. No. 5,831,836.
図 2 ( A ) は本発明の好ましい実施態様にかかる高周波モジュール を示す斜視図、 図 2 ( B ) はこれがマザ一ボードに搭載された状態に おける断面図、 図 2 ( C ) はその部分拡大断面図である。  2 (A) is a perspective view showing a high-frequency module according to a preferred embodiment of the present invention, FIG. 2 (B) is a cross-sectional view of the module mounted on a motherboard, and FIG. 2 (C) is a partially enlarged view thereof. It is sectional drawing.
図 3は、 本発明の好ましい実施態様にかかる高周波モジュールの分 解斜視図である。  FIG. 3 is an exploded perspective view of a high-frequency module according to a preferred embodiment of the present invention.
図 4 ( A ) は本発明の好ましい他の実施態様にかかる高周波モジュ ールを示す斜視図、 図 4 ( B ) はこれがマザ一ボー ドに搭載された状 態における断面図である。  FIG. 4 (A) is a perspective view showing a high-frequency module according to another preferred embodiment of the present invention, and FIG. 4 (B) is a sectional view in a state where the module is mounted on a motherboard.
図 5は、 本発明の好ましい他の実施態様にかかる高周波モジュール の分解斜視図である。  FIG. 5 is an exploded perspective view of a high-frequency module according to another preferred embodiment of the present invention.
図 6 ( A ) は本発明の好ましいさらに他の実施態様にかかる高周波 モジュールを示す斜視図、 図 6 ( B ) はこれがマザ一ボードに搭載さ れた状態における断面図である。 FIG. 6 (A) is a perspective view showing a high-frequency module according to still another preferred embodiment of the present invention, and FIG. 6 (B) is a module mounted on a motherboard. FIG. 4 is a cross-sectional view in a state of being moved.
図 7は、 本発明の好ましいさらに他の実施態様にかかる高周波モジ ユールの分解斜視図である。  FIG. 7 is an exploded perspective view of a high-frequency module according to still another preferred embodiment of the present invention.
図 8は、 図 6 ( A ) に示される X— X線で切断した場合の断面図で ある。  FIG. 8 is a cross-sectional view taken along the line X--X shown in FIG. 6 (A).
図 9は、 図 6 ( A ) に示される Y— Y線で切断した場合の断面図で ある。  FIG. 9 is a cross-sectional view taken along the line Y--Y shown in FIG. 6 (A).
図 1 0は、 図 6乃至図 9に示される高周波モジュールからアイソレ ータを取り除いた構造を有する高周波モジュールの断面図である。 図 1 1は、 高周波アンプ部とアイ ソレータの平面形状を模式的に表 した図である。 発明の実施の形態  FIG. 10 is a cross-sectional view of a high-frequency module having a structure in which an isolator is removed from the high-frequency modules shown in FIGS. 6 to 9. FIG. 11 is a diagram schematically illustrating the planar shapes of the high-frequency amplifier unit and the isolator. Embodiment of the Invention
以下、 添付図面に基づいて、 本発明の好ましい実施態様につき、 詳 細に説明を加える。  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
図 2 ( A ) は本発明の好ましい実施態様にかかる高周波モジュール を示す斜視図、 図 2 ( B ) はこれがマザ一ボードに搭載された状態に おける断面図、 図 2 ( C ) はその部分拡大断面図である。 また、 図 3 は、 本発明の好ましい実施態様にかかる高周波モジュールの分解斜視 図である。  2 (A) is a perspective view showing a high-frequency module according to a preferred embodiment of the present invention, FIG. 2 (B) is a cross-sectional view of the module mounted on a motherboard, and FIG. 2 (C) is a partially enlarged view thereof. It is sectional drawing. FIG. 3 is an exploded perspective view of a high-frequency module according to a preferred embodiment of the present invention.
図 2及び図 3に示されるように、 本実施態様にかかる高周波モジュ ール 1 0は、 基板 1 1 と、 基板 1 1の裏面に形成された複数の電極 1 2と、 基板 1 1の表面に実装された半導体チップ 1 3及びコンデンサ 等の電子部品 1 4と、 半導体チップ 1 3の上面に載置される天板 1 5 と、 キャップ 1 6 とを備える。 かかる構成を有する高周波モジュール 1 0は、 図 2 ( B ) に示されるように、 マザ一ボード 2 3に搭載され る。  As shown in FIGS. 2 and 3, the high-frequency module 10 according to the present embodiment includes a substrate 11, a plurality of electrodes 12 formed on the back surface of the substrate 11, and a surface of the substrate 11. An electronic component 14 such as a semiconductor chip 13 and a capacitor mounted on the semiconductor chip 13, a top plate 15 mounted on the upper surface of the semiconductor chip 13, and a cap 16 are provided. The high-frequency module 10 having such a configuration is mounted on the motherboard 23 as shown in FIG. 2 (B).
基板 1 1は、 単層の絶縁基板または積層構造により内部に素子を内 蔵した多層基板からなる。 基板 1 1 の表面には、 半導体チップ 1 3及 び電子部品 1 4との電気的な接続を確立するための電極 1 9が設けら れており、 かかる電極 1 9は、 基板 1 1の内部に設けられたスルーホ ール （図示せず） を介して基板 1 1の裏面に形成された電極 1 2と電 気的に接続されている。 The substrate 11 is a single-layer insulating substrate or a multi-layer substrate in which elements are built in a laminated structure. On the surface of substrate 11, semiconductor chip 13 and An electrode 19 for establishing electrical connection with the electronic component 14 is provided. The electrode 19 is connected to a through-hole (not shown) provided inside the substrate 11. It is electrically connected to the electrode 12 formed on the back surface of the substrate 11 through the intermediary.
電極 1 2は、 図 2 ( B ) に示されるように、 マザ一ボード 2 3に設 けられた電極 2 4と電気的に接続される。  The electrode 12 is electrically connected to the electrode 24 provided on the motherboard 23 as shown in FIG. 2 (B).
半導体チップ 1 3は、 高周波信号を取り扱う半導体チップであり、 図 2 ( C ) に示されるように、 複数の電極 2 0を備え、 電極 2 0上に は半田または金からなるマイクロバンプ 1 7が形成されている。 かか るマイクロバンプ 1 7は、 上述した基板 1 1の表面に形成された電極 1 9 と電気的及び機械的に接続され、 これによつて基板 1 1上に形成 された電極 1 9 と半導体チップ 1 3上に形成された電極 2 0とが電気 的に接続されるとともに、 半導体チップ 1 3が基板 1 1の表面にフリ ップチップ状に固定されている。 また、 図 2 ( C ) に示すように、 半 導体チップ 1 3 と基板 1 1 との間の隙間にはアンダーフィ リ ング樹脂 1 8が充填、 硬化されており、 これによつて、 半導体チップ 1 3 と基 板 1 1 とは強固に固定されている。 かかるアンダーフィ リング樹脂 1 8は、 半導体チップ 1 3 と基板 1 1 との間の隙間全体に供給される必 要があるので、 エポキシ系樹脂等の粘性の低い樹脂を用いることが好 ましい。  The semiconductor chip 13 is a semiconductor chip that handles high-frequency signals. As shown in FIG. 2 (C), the semiconductor chip 13 has a plurality of electrodes 20, and micro bumps 17 made of solder or gold are formed on the electrodes 20. Is formed. The micro-bump 17 is electrically and mechanically connected to the electrode 19 formed on the surface of the substrate 11 described above, whereby the electrode 19 formed on the substrate 11 is connected to the semiconductor. The electrodes 20 formed on the chip 13 are electrically connected, and the semiconductor chip 13 is fixed on the surface of the substrate 11 in a flip chip shape. Further, as shown in FIG. 2 (C), the gap between the semiconductor chip 13 and the substrate 11 is filled with an underfilling resin 18 and is hardened. 13 and the substrate 11 are firmly fixed. Since the underfilling resin 18 needs to be supplied to the entire gap between the semiconductor chip 13 and the substrate 11, it is preferable to use a low-viscosity resin such as an epoxy resin.
天板 1 5は、 アルミニウム、 銅等の金属からなる板状部材であり、 図 2 ( C ) に示されるように、 半導体チップ 1 3の上面の電極 1 3 a に半田または導電性接着剤 2 1により電気的に接続されている。 さら に、 半導体チップ 1 3が搭載された位置において、 天板 1 5 と基板 1 1 との間には絶縁性樹脂 2 2が充填されており、 これによつて、 半導 体チップ 1 3、 天板 1 5及び基板 1 1が相互に固定されるとともに、 半導体チップ 1 3が保護されている。 かかる樹脂 2 2は、 半導体チッ プ 1 3を+分に保護する必要があるので、 シリコン系樹脂等の粘性の 高い樹脂を用いることが好ましい。 キャップ 1 6は、 アルミニウムや銅等の帯状金属を曲成して形成さ れており、 平板部 1 6 a及び平板部 1 6 aの両端部から下方へ延びる 延出部 1 6 bを有する。 該キヤップ 1 6の平板部 1 6 aは前記天板 1 5に半田、 導電性接着剤またはスポッ ト溶接 （いずれも図示せず） に より電気的に接続されかつ固定される。 前記延出部 1 6 bは基板 1 1 を挟むように基板 1 1 の両側面部に当接している。 ここで、 基板 1 1 の両側面部にはグランド電極 （図示せず） が設けられており、 かかる グランド電極と延出部 1 6 b とが導電性接着剤または半田 （図示せず ) により電気的に接続され、 固定されている。 The top plate 15 is a plate-like member made of a metal such as aluminum or copper. As shown in FIG. 2 (C), the top plate 15 of the semiconductor chip 13 has solder or conductive adhesive 2 It is electrically connected by 1. Further, at the position where the semiconductor chip 13 is mounted, the space between the top plate 15 and the substrate 11 is filled with an insulating resin 22, whereby the semiconductor chips 13 and 13 are filled. The top plate 15 and the substrate 11 are fixed to each other, and the semiconductor chip 13 is protected. Since it is necessary to protect the semiconductor chip 13 by +, the resin 22 is preferably a highly viscous resin such as a silicon resin. The cap 16 is formed by bending a band-shaped metal such as aluminum or copper, and has a flat portion 16a and extending portions 16b extending downward from both ends of the flat portion 16a. The flat plate portion 16a of the cap 16 is electrically connected and fixed to the top plate 15 by soldering, a conductive adhesive, or spot welding (neither is shown). The extending portions 16b are in contact with both side surfaces of the substrate 11 so as to sandwich the substrate 11 therebetween. Here, ground electrodes (not shown) are provided on both side surfaces of the substrate 11, and the ground electrodes and the extending portions 16 b are electrically connected by a conductive adhesive or solder (not shown). Connected to and fixed.
高周波モジュール 1 0が搭載されるマザ一ボード 2 3には、 上述の とおり複数の電極 2 4が設けられており、 基板 1 1に設けられた電極 1 2と電気的に接続される。 さらに、 マザ一ボード 2 3にはグランド 電極 2 5が設けられており、 グランド電極 2 5 とキャップ 1 6の延出 部 1 6 bの下部とは、 半田 2 6により接続されている。  The mother board 23 on which the high-frequency module 10 is mounted is provided with the plurality of electrodes 24 as described above, and is electrically connected to the electrodes 12 provided on the substrate 11. Further, a ground electrode 25 is provided on the mother board 23, and the ground electrode 25 and the lower portion of the extension 16 b of the cap 16 are connected by solder 26.
このような構成からなる高周波モジュール 1 0においては、 半導体 チップ 1 3が発生する熱は、 天板 1 5、 キャップ 1 6を介して基板 1 1に伝達されると共に、 マザ一ボード 2 3のグランド電極 2 5に伝達 され、 放熱される。 しかも、 キャップ 1 6の延出部 1 6 bは基板 1 1 の側面部に当接しているので、 キャップ 1 6の平板部 1 6 aは天板 1 5の上面全体と密着し、 且つ、 キャップ 1 6の延出部 1 6 bは隙間な く基板 1 1の側面部と密着する。 このため、 きわめて良好な放熱作用 が得られる。  In the high-frequency module 10 having such a configuration, the heat generated by the semiconductor chip 13 is transmitted to the substrate 11 via the top plate 15 and the cap 16 and the ground of the mother board 23 is formed. It is transmitted to electrode 25 and dissipated. Moreover, since the extension 16b of the cap 16 is in contact with the side surface of the substrate 11, the flat plate 16a of the cap 16 is in close contact with the entire top surface of the top plate 15, and the cap 16 The extension 16b of 16 is in close contact with the side surface of the substrate 11 without any gap. For this reason, an extremely good heat radiation effect can be obtained.
また、 高周波モジュール 1 0においては、 熱源である半導体チップ 1 3 とキャップ 1 6 との間に天板 1 5が介在しているので、 かかる天 板 1 5 自体が熟を蓄積するヒー トシンク と しての役割を果たす。 天板 1 5に蓄積された熱は、 上述のとおりキャップ 1 6の平板部 1 6 a力 ら延出部 1 6 bを介して基板 1 1及びマザ一ボード 2 3へ伝達される 。 このように、 天板 1 5が熱を蓄積するヒー トシンクと しての役割を 果たすことから、 放熱特性はより向上する。 さらに、 図 2及び図 3に 示されるように、 天板 1 5の厚みはキャップ 1 6の厚みより も厚く形 成されているので、 ヒートシンク と しての能力は高く、 半導体チップ 1 3が高周波パワーアンプのような比較的大きな電力を信号を扱うチ ップである場合のように、 半導体チップ 1 3が非常に多くの熱を発す る場合においても、 十分に放熱することが可能となる。 しかも、 図 2 及び図 3に示されるように、 天板 1 5とキャップ 1 6の平板部 1 6 a との接触面積は、 天板 1 5 と半導体チップ 1 3の上面の電極 1 3 a と の接触面積より も大きいことから、 天板 1 5に蓄積された熱は、 効率 よく基板 1 1及びマザ一ボード 2 3に放出される。 また、 本発明にお いて、 天板 1 5は金属に限定されず、 樹脂やセラミ ック板に導体を被 着した構成であってもよい。 Further, in the high-frequency module 10, since the top plate 15 is interposed between the semiconductor chip 13 as a heat source and the cap 16, the top plate 15 itself serves as a heat sink for accumulating ripening. Role. The heat accumulated in the top plate 15 is transmitted from the flat plate portion 16a of the cap 16 to the substrate 11 and the mother board 23 via the extension portion 16b as described above. As described above, since the top plate 15 serves as a heat sink for accumulating heat, the heat radiation characteristics are further improved. Figures 2 and 3 show As shown, the thickness of the top plate 15 is formed to be thicker than the thickness of the cap 16, so that the capability as a heat sink is high, and the semiconductor chip 13 is relatively large like a high-frequency power amplifier. Even when the semiconductor chip 13 generates a great deal of heat, as in the case of a chip that handles electric power, it is possible to sufficiently dissipate heat. Moreover, as shown in FIGS. 2 and 3, the contact area between the top plate 15 and the flat plate portion 16a of the cap 16 is equal to the top plate 15 and the electrode 13a on the upper surface of the semiconductor chip 13. Since the contact area is larger than the contact area, the heat accumulated in the top plate 15 is efficiently released to the substrate 11 and the mother board 23. Further, in the present invention, the top plate 15 is not limited to metal, and may have a configuration in which a conductor is attached to a resin or a ceramic plate.
尚、 半導体チップ 1 3が発生する熱の多くは天板 1 5及びキャップ 1 6を介してマザ一ボード 2 3へ放熱されるが、 一部は、 マイクロバ ンプ 1 7や樹脂 1 8を介して基板 1 1にも伝達され、 基板 1 1の電極 1 2からマザ一ボード 2 3へも放熱される。  Most of the heat generated by the semiconductor chip 13 is radiated to the mother board 23 via the top plate 15 and the cap 16, but a part of the heat is generated via the micro bump 17 and the resin 18. The heat is also transmitted to the substrate 11, and is also radiated from the electrodes 12 of the substrate 11 to the motherboard 23.
また、 本実施態様にかかる高周波モジュール 1 0は、 例えば 1 G H zを越える高周波帯で使用されるため、 高周波モジュール 1 0に搭載 される半導体チップ 1 3の上面の電極 1 3 aに対して一定の電位を与 える必要がある場合があるが、 本実施態様にかかる高周波モジュール 1 0においては、 半導体チップ 1 3の上面の電極 1 3 a力 S、 天板 1 5 及びキヤップ 1 6を介してマザ一ボード 2 3のグランド電極 2 5に接 続されているので、 半導体チップ 1 3の電極 1 3 a を確実にマザーボ ード 2 3のグランド電位と同じ電位とすることができる。  Further, since the high-frequency module 10 according to the present embodiment is used in a high-frequency band exceeding, for example, 1 GHz, it is fixed to the electrode 13 a on the upper surface of the semiconductor chip 13 mounted on the high-frequency module 10. However, in the high-frequency module 10 according to the present embodiment, the electrode 13 a force S on the upper surface of the semiconductor chip 13, the top plate 15, and the cap 16 may be applied. Since it is connected to the ground electrode 25 of the motherboard 23, the electrode 13a of the semiconductor chip 13 can be reliably set to the same potential as the ground potential of the motherboard 23.
さらに、 キャップ 1 6の厚みは天板 1 5の厚みより も薄いので、 曲 げ加工が容易である。 すなわち、 仮にキャップ 1 6 と天板 1 5とが一 体的であると形状が複雑となり成形が困難となるが、 薄いために曲げ 加工が容易なキヤップ 1 6 と、 厚いために熱を蓄積する能力の高い天 板 1 5 とを組み合わせて使用することにより、 簡単かつ低コス トで、 高周波モジュール 1 0を製造することが可能となる。 しかも、 高周波 モジュール 1 0においては、 天板 1 5 とキャップ 1 6 とを組み合わせ て使用しているので、 半導体チップ 1 3の厚みや基板 1 1 の厚みが異 なる高周波モジュール 1 0を製造する場合にも、 天板 1 5の厚みを調 節すれば同じキャップ 1 6を使用することが可能となる。 このため、 汎用性も向上し、 コス トを低減することが可能となる。 Further, since the thickness of the cap 16 is smaller than the thickness of the top plate 15, bending is easy. That is, if the cap 16 and the top plate 15 are integrated, the shape becomes complicated and molding becomes difficult, but the thin cap 16 that is easy to bend and the thick one accumulates heat By using a combination with the top plate 15 having high capability, the high-frequency module 10 can be manufactured easily and at low cost. Moreover, high frequency In the module 10, since the top plate 15 and the cap 16 are used in combination, even when manufacturing the high-frequency module 10 in which the thickness of the semiconductor chip 13 and the thickness of the substrate 11 are different, By adjusting the thickness of the top plate 15, the same cap 16 can be used. For this reason, versatility is also improved, and costs can be reduced.
その上、 キャップ 1 6を薄くすることにより、 高周波モジュールの 高さが許す限り天板 1 5の厚みを厚くすることができるので、 ヒー ト シンクと しての性能を上げることが可能である。 このキャップ 1 6の 材質と しては、 上述のとおりアルミユウムゃ銅を用いることが好まし いが、 価格、 熱伝導、 電気伝導度を考慮すれば、 アルミニウムを用い ることが最も好ましい。 また、 強度があれば、 金属泊によってキヤッ プ 1 6を構成してもよい。  In addition, by making the cap 16 thinner, the top plate 15 can be made as thick as the height of the high-frequency module allows, so that the performance as a heat sink can be improved. As a material of the cap 16, aluminum-copper is preferably used as described above, but aluminum is most preferably used in consideration of price, heat conduction, and electric conductivity. If the strength is high, the cap 16 may be formed by metal stay.
また、 天板 1 5の材料と してアルミニウムを用いれば、 導電性、 熱 伝導性、 価格の面で有利であり、 半導体チップ 1 3の基板 1 1に設け られたグランド電極 （図示せず） への接続、 放熱が良好に行われ、 製 造コス トを低減できる。  Also, if aluminum is used as the material of the top plate 15, it is advantageous in terms of conductivity, heat conductivity, and price, and a ground electrode (not shown) provided on the substrate 11 of the semiconductor chip 13. Good connection and heat dissipation are achieved, and manufacturing costs can be reduced.
また、 本実施態様にかかる高周波モジュール 1 0においては、 キヤ ップ 1 6が、 半導体チップ 1 3や電子部品 1 4の全体を覆っていない ので、 マザ一ボード 2 3に実装後も半導体チップ 1 3や電子部品 1 4 を目視することができ、 そのためマザ一ボード 2 3に実装した後に不 良が検出された場合であっても、 不良個所の発見及び修復を容易に行 うことができる。 ただし、 本発明において、 キャップ 1 6が半導体チ ップ 1 3や電子部品 1 4の全体を覆っていない点は必須ではなく、 キ ヤップ 1 6の平板部 1 6 aの全ての辺から延出部 1 6 bを延出させ、 基板 1 1の全ての側面を延出部 1 6 bによって覆うことも可能である 次に、 本発明の好ましい他の実施態様につき、 詳細に説明を加える 図 4 ( A ) は本発明の好ましい他の実施態様にかかる高周波モジュ ールを示す斜視図、 図 4 ( B ) はこれがマザ一ボードに搭載された状 態における断面図である。 また、 図 5は、 本発明の好ましい他の実施 態様にかかる高周波モジュールの分解斜視図である。 Further, in the high-frequency module 10 according to the present embodiment, since the cap 16 does not cover the entire semiconductor chip 13 and the electronic component 14, the semiconductor chip 1 is not mounted on the mother board 23. 3 and the electronic component 14 can be visually observed, so that even if a defect is detected after mounting on the motherboard 23, the defective portion can be easily found and repaired. However, in the present invention, it is not essential that the cap 16 does not entirely cover the semiconductor chip 13 and the electronic component 14, and the cap 16 extends from all sides of the flat plate portion 16 a of the cap 16. It is also possible to extend the portion 16b and cover all sides of the substrate 11 with the extension 16b. Next, another preferred embodiment of the present invention will be described in detail. (A) is a high-frequency module according to another preferred embodiment of the present invention. FIG. 4 (B) is a cross-sectional view of a state in which this is mounted on a mother board. FIG. 5 is an exploded perspective view of a high-frequency module according to another preferred embodiment of the present invention.
本実施態様にかかる高周波モジュール 3 0は、 基板 1 1 と、 基板 1 1の裏面に形成された電極 1 2 と、 基板 1 1 の表面に実装された半導 体チップ 1 3及びコンデンサ等の電子部品 1 4と、 半導体チップ 1 3 より高さの高いアイ ソレータ 3 1 と、 半導体チップ 1 3の上面に載置 される天板 1 5 と、 キャップ 1 6 とを備える。 かかる構成を有する高 周波モジュール 3 0は、 図 4 ( B ) に示されるように、 マザ一ボード 2 3に搭載される。  The high-frequency module 30 according to the present embodiment includes a substrate 11, electrodes 12 formed on the back surface of the substrate 11, semiconductor chips 13 mounted on the surface of the substrate 11, and electronic components such as capacitors. The semiconductor device includes a component, an isolator higher than the semiconductor chip, a top plate placed on the upper surface of the semiconductor chip, and a cap. The high-frequency module 30 having such a configuration is mounted on the motherboard 23, as shown in FIG. 4 (B).
アイ ソレータ 3 1は、 高周波回路において非可逆回路素子と して高 周波アンプの後段に良く使用されるものである。 このアイ ソレータ 3 1は、 Y I G等のフェライ トコアに永久磁石を載せ、 さらに、 それら を鉄等の金属板を磁気ヨークと して包み込む構造にして使うため、 通 常のチップ部品より も高さのある部品となりやすい。  The isolator 31 is often used as a non-reciprocal circuit element in a high-frequency circuit after a high-frequency amplifier. This isolator 31 uses permanent magnets mounted on a ferrite core such as YIG, and uses them in a structure that wraps a metal plate such as iron as a magnetic yoke, so that it is higher than a normal chip component. It is easy to become a part.
高周波モジュール 3 0においては、 天板 1 5が半導体チップ 1 3の 上面の電極 1 3 a (図 4及び図 5には図示せず） に半田または導電性 接着剤 2 1 (図 4及び図 5には図示せず） により電気的に接続されて おり、 天板 1 5の上面はアイソレータ 3 1 の上面とほぼ同一平面であ る力 または、 天板 1 5の上面がアイソレータ 3 1の上面より も僅か に高くなつている。 ここで、 天板 1 5の上面をアイ ソレータ 3 1の上 面とほぼ同一平面とする力 、 または、 アイ ソレータ 3 1 の上面よ り も 僅かに高く設定する理由は、 製造誤差により、 天板 1 5の上面がアイ ソレータ 3 1の上面より も低く なり、 これによつて天板 1 5 とキヤッ プ 1 6 との間に隙間が生じるのを防ぐためである。  In the high-frequency module 30, the top plate 15 is connected to the electrode 13a (not shown in FIGS. 4 and 5) on the upper surface of the semiconductor chip 13 by soldering or conductive adhesive 21 (see FIGS. 4 and 5). The top surface of the top plate 15 is substantially coplanar with the top surface of the isolator 31 or the top surface of the top plate 15 is higher than the top surface of the isolator 31. Is also slightly higher. Here, the force that makes the upper surface of the top plate 15 almost flush with the upper surface of the isolator 31 or the force that is set slightly higher than the upper surface of the isolator 31 is due to manufacturing errors. This is to prevent the upper surface of 15 from being lower than the upper surface of the isolator 31, thereby preventing a gap from being formed between the top plate 15 and the cap 16.
また、 キャップ 1 6は、 平板部 1 6 a及び延出部 1 6 bを有し、 該 キャップ 1 6の平板部 1 6 aは天板 1 5に半田、 導電性接着剤または スポッ ト溶接 （いずれも図示せず） により電気的に接続されかつ固定 されるとともに、 アイ ソレータ 3 1 の上面を保持する。 また、 前記延 出部 1 6 bは基板 1 1の両側面部を挟むように当接している。 ここで 、 基板 1 1の両側面部にはグランド電極が設けられており、 かかるグ ランド電極と延出部 1 6 b とが導電性接着剤または半田により電気的 に接続され、 固定されている。 The cap 16 has a flat plate portion 16a and an extension portion 16b, and the flat plate portion 16a of the cap 16 is connected to the top plate 15 by soldering, conductive adhesive, or spot welding ( Both are electrically connected and fixed by not shown), and hold the upper surface of the isolator 31. In addition, the said The protruding portions 16b are in contact with both sides of the substrate 11 therebetween. Here, ground electrodes are provided on both side surfaces of the substrate 11, and the ground electrodes and the extending portions 16b are electrically connected and fixed by a conductive adhesive or solder.
ここで、 天板 1 5の上面をアイソレータ 3 1の上面と同じかまたは やや高く しているので、 天板 1 5にキャップ 1 6の平板部 1 6 a を密 着させることができる。 基板 1 1 と半導体チップ 1 3、 キャップ 1 6 と基板 1 1、 キャップ 1 6 とマザ一ボード 2 3 との電気的接続、 固定 関係は前記実施態様にかかる高周波モジュール 1 0 と同様であるため 、 重複する説明は省く。  Here, since the upper surface of the top plate 15 is the same as or slightly higher than the upper surface of the isolator 31, the flat plate portion 16a of the cap 16 can be closely attached to the top plate 15. Since the electrical connection and fixing relationship between the substrate 11 and the semiconductor chip 13, the cap 16 and the substrate 11, and the cap 16 and the motherboard 23 are the same as those of the high-frequency module 10 according to the embodiment, Duplicate descriptions are omitted.
本実施態様にかかる高周波モジュール 3 0は、 上述の実施態様にか かる高周波モジュール 1 0による効果に加え、 以下の効果をさらに有 する。 すなわち、 本実施態様にかかる高周波モジュール 3 0において は、 半導体チップ 1 3 とアイ ソレータ 3 1を 1個の基板 1 1にまとめ て搭載しているが、 これらの部品を 1つのキャップ 1 6で覆うことに より、 基板 1 1、 半導体チップ 1 3、 天板 1 6、 アイ ソレータ 3 1を 含めた高周波モジュール 3 0をマザ一ボード 2 3にマウントする際に 、 マウンタ （図示せず） のノズルをキヤップ 1 6の平板部 1 6 aに吸 着させることによりハンドリ ングすることが可能となる。 このため、 高周波モジュール 3 0においては、 互いに高さの異なる半導体チップ 1 3及びアイ ソレータ 3 1が混載されているにもかかわらず、 実装時 におけるハンドリングが非常に容易となる。  The high frequency module 30 according to the present embodiment has the following effects in addition to the effects of the high frequency module 10 according to the above embodiment. That is, in the high-frequency module 30 according to the present embodiment, the semiconductor chip 13 and the isolator 31 are collectively mounted on one substrate 11, but these components are covered with one cap 16. Therefore, when mounting the high-frequency module 30 including the substrate 11, the semiconductor chip 13, the top plate 16, and the isolator 31 to the motherboard 23, a nozzle of a mounter (not shown) is used. By sucking the cap 16 on the flat plate portion 16a, handling becomes possible. For this reason, in the high-frequency module 30, although the semiconductor chip 13 and the isolator 31 having different heights are mixedly mounted, handling during mounting becomes very easy.
次に、 本発明の好ましいさらに他の実施態様につき、 詳細に説明を 加える。  Next, still another preferred embodiment of the present invention will be described in detail.
図 6 ( A ) は本発明の好ましいさらに他の実施態様にかかる高周波 モジュールを示す斜視図、 図 6 ( B ) はこれがマザ一ボードに搭載さ れた状態における断面図である。 また、 図 7は、 本発明の好ましいさ らに他の実施態様にかかる高周波モジュールの分解斜視図である。 ま た、 図 8は、 図 6 ( A ) に示される X— X線で切断した場合の断面図 であり、 図 9は、 図 6 ( A ) に示される Y— Y線で切断した場合の断 面図である。 FIG. 6 (A) is a perspective view showing a high-frequency module according to still another preferred embodiment of the present invention, and FIG. 6 (B) is a cross-sectional view in a state where the module is mounted on a motherboard. FIG. 7 is an exploded perspective view of a high-frequency module according to still another preferred embodiment of the present invention. Fig. 8 is a cross-sectional view taken along the line X-X shown in Fig. 6 (A). FIG. 9 is a cross-sectional view taken along the line Y--Y shown in FIG. 6 (A).
図 6乃至図 9に示されるように、 本実施態様にかかる高周波モジュ ール 4 0は、 基板 4 1 と、 基板 4 1の裏面に形成された複数の電極 4 2と、 基板 4 1 の表面に実装された半導体チップ 4 3及びコンデンサ 等の電子部品 4 4と、 半導体チップ 4 3の上面に載置されるヒー トシ ンク 4 5 と、 非可逆回路素子であるアイ ソレータ 4 7と、 ヒートシン ク 4 5及びアイ ソレータ 4 7を覆うキャップ 4 6とを備え、 基板 4 1 、 半導体チップ 4 3、 電子部品 4 4及びヒートシンク 4 5は、 高周波 アンプ部 7 0を構成する。 かかる構成を有する高周波モジュール 4 0 は、 図 6 ( Β ) に示されるように、 マザ一ボード 2 3に搭載される。 基板 4 1は、 高周波アンプ部 7 0に属し、 積層構造により内部に多 数の導体層 4 8が形成された多層基板からなる。 基板 4 1の表面には 、 半導体チップ 4 3及び電子部品 4 4との電気的な接続を確立するた めの電極 4 9が設けられており、 かかる電極 4 9は、 基板 4 1の内部 に設けられた上記導体層 4 8を介して基板 4 1 の裏面に形成された電 極 4 2 と電気的に接続されている。  As shown in FIGS. 6 to 9, the high-frequency module 40 according to the present embodiment includes a substrate 41, a plurality of electrodes 42 formed on the back surface of the substrate 41, and a surface of the substrate 41. A semiconductor chip 43 mounted on the semiconductor chip 43 and electronic components 44 such as a capacitor; a heat sink 45 mounted on the upper surface of the semiconductor chip 43; an isolator 47 as a non-reciprocal circuit element; and a heat sink The substrate 41, the semiconductor chip 43, the electronic components 44, and the heat sink 45 constitute a high-frequency amplifier 70. The high-frequency module 40 having such a configuration is mounted on the motherboard 23, as shown in FIG. The substrate 41 belongs to the high-frequency amplifier unit 70, and is formed of a multilayer substrate in which a large number of conductor layers 48 are formed in a laminated structure. An electrode 49 for establishing electrical connection with the semiconductor chip 43 and the electronic component 44 is provided on the surface of the substrate 41, and the electrode 49 is provided inside the substrate 41. It is electrically connected to an electrode 42 formed on the back surface of the substrate 41 via the provided conductor layer 48.
電極 4 2は、 図 6 ( Β ) に示されるように、 半田 5 0を介して、 マ ザ一ボード 2 3に設けられた電極 5 1 と電気的に接続される。  The electrode 42 is electrically connected to the electrode 51 provided on the motherboard 23 via the solder 50 as shown in FIG. 6 (().
半導体チップ 4 3は、 高周波アンプ部 7 0に属し、 例えばガリ ウム 砒素基板によって構成される高周波信号を取り扱う半導体チップであ る。 半導体チップ 4 3は、 複数の電極 （図示せず） を備え、 かかる電 極 （図示せず） 上には半田または金からなるマイクロバンプ 5 2が形 成されている。 かかるマイクロバンプ 5 2は、 上述した基板 4 1の表 面に形成された電極 4 9 と電気的及び機械的に接続され、 これによつ て基板 4 1上に形成された電極 4 9 と半導体チップ 4 3上に形成され た電極 （図示せず） とが電気的に接続されるとともに、 半導体チップ 4 3が基板 4 1 の表面にフリ ップチップ状に固定される。 また、 図 6 乃至図 9に示されるように、 半導体チップ 4 3 と基板 4 1 との間の隙 間にはアンダーフィ リング樹脂 5 3が充填、 硬化されており、 これに よって、 半導体チップ 4 3 と基板 4 1 とは強固に固定されている。 か かるアンダーフイ リ ング樹脂 5 3は、 半導体チップ 4 3 と基板 4 1 と の間の隙間全体に供給される必要があるので、 エポキシ系樹脂等の粘 性の低い樹脂を用いることが好ましい。 The semiconductor chip 43 is a semiconductor chip that belongs to the high-frequency amplifier 70 and handles a high-frequency signal composed of, for example, a gallium arsenide substrate. The semiconductor chip 43 includes a plurality of electrodes (not shown), and micro bumps 52 made of solder or gold are formed on the electrodes (not shown). The micro-bumps 52 are electrically and mechanically connected to the electrodes 49 formed on the surface of the substrate 41 described above, whereby the electrodes 49 formed on the substrate 41 are connected to the semiconductors. The electrodes (not shown) formed on the chip 43 are electrically connected, and the semiconductor chip 43 is fixed on the surface of the substrate 41 in a flip chip shape. Also, as shown in FIGS. 6 to 9, the gap between the semiconductor chip 43 and the substrate 41 is formed. The underfilling resin 53 is filled and cured between the semiconductor chips 43 and the semiconductor chip 43 and the substrate 41 are firmly fixed. Since the underfilling resin 53 needs to be supplied to the entire gap between the semiconductor chip 43 and the substrate 41, it is preferable to use a low-viscosity resin such as an epoxy resin.
電子部品 4 4は、 高周波アンプ部 7 0に属し、 例えば単体のコンデ ンサからなる。 また、 図 6乃至図 8に示されるように、 基板 4 1 に搭 載された状態において、 その上面の高さは、 半導体チップ 4 3の上面 の高さより も高くなっている。  The electronic component 44 belongs to the high-frequency amplifier 70, and is composed of, for example, a single capacitor. In addition, as shown in FIGS. 6 to 8, when mounted on the substrate 41, the height of the upper surface is higher than the height of the upper surface of the semiconductor chip 43.
ヒ一 トシンク 4 5は、 高周波アンプ部 7 0に属し、 金属アルミニゥ ムからなる。 また、 図 6乃至図 8に示されるように、 その略中央部に 突出部 4 5 aを有している。 突出部 4 5 aはヒートシンク 4 5の一端 から他端にわたって一定の幅で形成されており、 金属アルミ二ゥムの 押し出し形成、 切断によって安価かつ容易に量産することができる。 該ヒー トシンク 4 5の突出部 4 5 a は、 半導体チップ 4 3の上面の電 極 （図示せず） に半田または導電性接着剤 5 4により電気的に接続さ れている。 さらに、 ヒートシンク 4 5の突出部 4 5 a と基板 4 1 との 間には接着剤 5 5が充填されており、 これによつて、 半導体チップ 4 3、 ヒートシンク 4 5及び基板 4 1が相互に固定されるとともに、 半 導体チップ 4 3が保護されている。 図 9に示されるように、 接着剤 5 5は、 ヒートシンク 4 5の突出部 4 5 a と基板 4 1 との間のほぼ全面 に亘つて設けられており、 これによつて、 ヒートシンク 4 5 と基板 4 1 とは強固に固定されることになる。  The heat sink 45 belongs to the high-frequency amplifier 70 and is made of metal aluminum. Further, as shown in FIG. 6 to FIG. 8, a protruding portion 45a is provided at a substantially central portion thereof. The protruding portion 45a is formed with a constant width from one end to the other end of the heat sink 45, and can be mass-produced inexpensively and easily by extruding and cutting metal aluminum. The protrusion 45 a of the heat sink 45 is electrically connected to an electrode (not shown) on the upper surface of the semiconductor chip 43 by solder or a conductive adhesive 54. Further, an adhesive 55 is filled between the protrusion 45 a of the heat sink 45 and the substrate 41, whereby the semiconductor chip 43, the heat sink 45 and the substrate 41 are mutually connected. While being fixed, the semiconductor chip 43 is protected. As shown in FIG. 9, the adhesive 55 is provided almost over the entire surface between the protrusion 45 a of the heat sink 45 and the substrate 41, whereby the heat sink 45 and the adhesive 55 are provided. The substrate 41 is firmly fixed.
また、 ヒートシンク 4 5の上面はアイソレータ 4 7の上面とほぼ同 —平面であるか、 または、 ヒー トシンク 4 5の上面がアイ ソレータ 4 7の上面より も僅かに高くなるように設定される。 ヒー トシンク 4 5 の上面をアイソレータ 4 7の上面とほぼ同一平面とする力 、 または、 アイ ソレータ 4 7の上面より も僅かに高くなるように設定する理由は 、 製造誤差によ り、 ヒー トシンク 4 5の上面がアイ ソレータ 4 7の上 面より も低くなり、 これによつてヒートシンク 4 5 とキャップ 4 6 と の間に隙間が生じるのを防ぐためである。 さらに、 ヒー トシンク 4 5 は突出部 4 5 a を備えているため、 ヒートシンク 4 5と基板 4 1 との 間には、 スペース 6 9が形成される。 図 6及び図 8に示されるよ うに 、 上記電子部品 4 4は、 かかるスペース 6 9内に載置されている。 キャップ 4 6は、 高周波アンプ部 7 0及びアイソレータ部 7 1の両 方に亘つて設けられており、 アルミ二ゥムゃ銅等の帯状金属を曲成し て形成され、 平板部 4 6 a、 延出部 4 6 b、 4 6 c、 曲成部 4 6 d、 4 6 eを有している。 該キャップ 4 6の平板部 4 6 aは、 前記ヒート シンク 4 5の上面及びアイ ソレータ 4 7の上面に、 図 8及び図 9に示 されるように、 半田、 導電性接着剤またはスポッ ト溶接 5 6によ り電 気的に接続されかつ固定される。 また、 キャップ 4 6の延出部 4 6 b はヒートシンク 4 5の側面部及び基板 4 1 の側面部を覆い、 キャップ 4 6の延出部 4 6 cはアイ ソレータ 4 7の側面部を覆っている。 すな わち、 キャップ 4 6の延出部 4 6 b及び 4 6 cは、 基板 4 1 とァイソ レータ 4 7とを挟むように基板 4 1 の側面部およびアイソレータ 4 7 の側面部に当接している。 ここで、 基板 4 1の側面部にはグランド電 極 （図示せず） が設けられており、 かかるグランド電極と延出部 4 6 bとが導電性接着剤または半田 （図示せず） により電気的に接続され 、 固定されている。 The upper surface of the heat sink 45 is set to be substantially the same as the upper surface of the isolator 47, or the upper surface of the heat sink 45 is set slightly higher than the upper surface of the isolator 47. The reason for setting the upper surface of the heat sink 45 to be substantially flush with the upper surface of the isolator 47 or setting it to be slightly higher than the upper surface of the isolator 47 is due to manufacturing errors. The top of 5 is above the isolator 4 7 This is to prevent a gap from being formed between the heat sink 45 and the cap 46 due to the lower surface. Further, since the heat sink 45 includes the protrusion 45 a, a space 69 is formed between the heat sink 45 and the substrate 41. As shown in FIGS. 6 and 8, the electronic component 44 is placed in the space 69. The cap 46 is provided over both the high-frequency amplifier section 70 and the isolator section 71, and is formed by bending a band-shaped metal such as aluminum or copper. It has extending portions 46b and 46c and curved portions 46d and 46e. As shown in FIGS. 8 and 9, the flat plate portion 46 a of the cap 46 is formed on the upper surface of the heat sink 45 and the upper surface of the isolator 47 by soldering, conductive adhesive or spot welding. Electrically connected and fixed by 56. The extension 46b of the cap 46 covers the side of the heat sink 45 and the side of the substrate 41, and the extension 46c of the cap 46 covers the side of the isolator 47. I have. That is, the extending portions 46 b and 46 c of the cap 46 abut the side surface of the substrate 41 and the side surface of the isolator 47 so as to sandwich the substrate 41 and the isolator 47. ing. Here, a ground electrode (not shown) is provided on the side surface of the substrate 41, and the ground electrode and the extending portion 46b are electrically connected by a conductive adhesive or solder (not shown). Is connected and fixed.
アイ ソレータ 4 7は、 図 8に示されるように、 支持体 5 7に、 誘電 体基板 5 8 と、 Y I G等でなるフェライ トコア 5 9 と、 フェライ トコ ァ 5 9を包むように設けられた共振用導体 6 0と、 永久磁石 6 1 とが 設けられ、 全体をヨーク 6 2により覆って一体化した構造を有する。 誘電体基板 5 8は、 高周波アンプ部 7 0側と接続するための入力端子 6 3 とグランド端子 （図示せず） とを有するとともに、 マザ一ボード 2 3に設けられた電極 5 1 と接続するための電極 6 4、 6 5を有する 。 アイ ソレータ 4 7に設けられた電極 6 4、 6 5 とマザ一ボード 2 3 に設けられた電極 5 1 とは、 半田 5 0を介して電気的に接続される。 上述した構成を有する高周波アンプ部 7 0 とアイ ソレータ 4 7 とは 、 その側面同士を接着することによって一体化され、 高周波モジユー ル 4 0が構成される。 また、 高周波アンプ部 7 0とアイ ソレータ 4 7 との電気的な接続は、 半田 6 6によって確立される。 As shown in FIG. 8, the isolator 47 includes a dielectric substrate 58, a ferrite core 59 made of YIG or the like, and a resonance core provided around the ferrite core 59. A conductor 60 and a permanent magnet 61 are provided, and have a structure in which the whole is covered with a yoke 62 and integrated. The dielectric substrate 58 has an input terminal 63 and a ground terminal (not shown) for connection to the high-frequency amplifier unit 70 side, and is connected to the electrode 51 provided on the motherboard 23. For electrodes 64, 65. The electrodes 64, 65 provided on the isolator 47 and the electrodes 51 provided on the motherboard 23 are electrically connected via solder 50. The high-frequency amplifier unit 70 and the isolator 47 having the above-described configuration are integrated by bonding their side surfaces to each other to form the high-frequency module 40. Further, the electrical connection between the high-frequency amplifier 70 and the isolator 47 is established by the solder 66.
尚、 一体化される前の高周波アンプ部 7 0及びアイ ソレータ 4 7は 、 全体として機能検査やト リ ミングを行うことができる半製品と して 構成される。 したがって、 高周波アンプ部 7 0及びアイ ソレータ 4 7 を別個に製造した後、 これらを一体化する前に、 機能検査やトリ ミ ン グ等による調整を行い、 その後一体化することができる。  The high-frequency amplifier 70 and the isolator 47 before being integrated are configured as a semi-finished product that can perform a function test and trimming as a whole. Therefore, after the high-frequency amplifier 70 and the isolator 47 are manufactured separately, before they are integrated, an adjustment by a function test, trimming, or the like is performed, and then they can be integrated.
高周波モジュール 4 0が搭載されるマザ一ボード 2 3には、 上述の とおり複数の電極 5 1が設けられており、 基板 4 1に設けられた電極 4 2と電気的に接続される。 さらに、 マザ一ボード 2 3にはグランド 電極 6 7が設けられており、 グランド電極 6 7とキャップ 4 6の延出 部 4 6 b及び 4 6 cの下部とは、 半田 6 8により接続されている。  The mother board 23 on which the high-frequency module 40 is mounted is provided with the plurality of electrodes 51 as described above, and is electrically connected to the electrodes 42 provided on the substrate 41. In addition, a ground electrode 67 is provided on the motherboard 23, and the ground electrode 67 and the lower portions of the extensions 46b and 46c of the cap 46 are connected by solder 68. I have.
このような構成を有する高周波モジュール 4 0は、 ヒートシンク 4 5に突出部 4 5 aが設けられているので、 ヒートシンク 4 5 と基板 4 1 との間には、 ヒートシンク 4 5の突出部 4 5 a と基板 4 1 との間に 載置される半導体チップ 4 3を超える厚みを有する電子部品 4 4を搭 載するスペース 6 9が形成される。 したがって、 本実施態様にかかる 高周波モジュール 4 0によれば、 電子部品 4 4の厚みが、 ヒートシン ク 4 5により放熱がされる半導体チップ 4 3の厚みより も厚い場合で あっても、 これらを同一の基板 4 1上に搭載することが可能となる。 また、 ヒートシンク 4 5は突出部 4 5 aを有することから、 熱容量 を大とすることができ、 これにより放熱特性を向上させることができ る。 しかも、 かかる突出部 4 5 a と、 半導体チップ 4 3及び基板 4 1 との間には接着剤 5 5が設けられているので、 ヒートシンク 4 5の突 出部 4 5 a と半導体チップ 4 3の側面部との間も接着することができ 、 接着強度が高まる。  In the high-frequency module 40 having such a configuration, since the protrusion 45 a is provided on the heat sink 45, the protrusion 45 a of the heat sink 45 is provided between the heat sink 45 and the substrate 41. A space 69 for mounting an electronic component 44 having a thickness exceeding the thickness of the semiconductor chip 43 mounted between the semiconductor chip 43 and the substrate 41 is formed. Therefore, according to the high-frequency module 40 according to the present embodiment, even when the thickness of the electronic component 44 is larger than the thickness of the semiconductor chip 43 radiated by the heat sink 45, they are the same. Can be mounted on the substrate 41. In addition, since the heat sink 45 has the protruding portion 45a, the heat capacity can be increased, thereby improving the heat radiation characteristics. Moreover, since the adhesive 55 is provided between the protruding portion 45 a and the semiconductor chip 43 and the substrate 41, the protruding portion 45 a of the heat sink 45 and the adhesive of the semiconductor chip 43 are provided. Adhesion can also be made between the side and the bonding strength.
また、 ヒートシンク 4 5の突出部 4 5 aは、 一端から他端にわたつ てレール状に形成しているので、 ヒートシンク 4 5を金属アルミニゥ ム等の押し出し成形、 切断により容易に製造でき、 製造コス トを低減 することができる。 Also, the protrusion 45 a of the heat sink 45 extends from one end to the other end. Since the heat sink 45 is formed in a rail shape, the heat sink 45 can be easily manufactured by extruding and cutting metal aluminum or the like, and the manufacturing cost can be reduced.
さらに、 高周波モジュール 4 0においては、 キャップ 4 6の延出部 4 6 b及び 4 6 c力 マザ一ボード 2 3上のグランド電極 6 7に半田 付けされているので、 半導体チップ 4 3より発生した熱は、 ヒートシ ンク 4 5、 キヤップ 1 3を通してマザ一ボード 2 3上のグランド電極 6 7上に伝導される。 また、 ヒートシンク 4 5、 キャップ 4 6とによ つて熱容量の大きな吸熱体が構成される上、 吸収された熱は、 グラン ド電極 6 7まで伝熱されるので、 良好な放熱が行われる。 なお、 高周 波モジュール 4 0においては、 キャップ 4 6の延出部 4 6 b及び 4 6 cのうち、 ヒートシンク 4 5及び基板 4 1 と接する延出部 4 6 bのみ をマザ一ボード 2 3に半田付けしてもよいが、 延出部 4 6 b及び 4 6 cの双方をマザ一ボード 2 3に半田付けすることによってより放熱性 能が向上する。  Further, in the high-frequency module 40, since the extension portions 46b and 46c of the cap 46 are soldered to the ground electrode 67 on the motherboard 23, the semiconductor chip 43 generates The heat is conducted to the ground electrode 67 on the motherboard 23 through the heat sink 45 and the cap 13. In addition, the heat sink 45 and the cap 46 constitute a heat absorber having a large heat capacity, and the absorbed heat is transmitted to the ground electrode 67, so that good heat radiation is performed. In the high frequency module 40, only the extension 46b of the cap 46, which is in contact with the heat sink 45 and the board 41, of the extension 46b and 46c is a mother board 23 Although the extension portions 46 b and 46 c may be soldered to the motherboard 23, the heat radiation performance is further improved.
また、 本実施態様にかかる高周波モジュール 4 0においては、 キヤ ップ 4 6とアイ ソレータ 4 7のヨーク 6 2 とを導電性接着剤または半 田 5 6によって接合しているので、 半導体チップ 4 3で発生した熱を ヒートシンク 4 5、 キャップ 4 6を介してヨーク 6 2に伝達すること ができ、 これによつて放熱性能を高めることができる。  Further, in the high-frequency module 40 according to the present embodiment, since the cap 46 and the yoke 62 of the isolator 47 are joined by a conductive adhesive or solder 56, the semiconductor chip 43 The heat generated by the heat transfer can be transmitted to the yoke 62 via the heat sink 45 and the cap 46, thereby improving the heat radiation performance.
また、 本実施態様にかかる高周波モジュール 4 0においては、 キヤ ップ 4 6の両側部分に小幅の垂直の曲成部 4 6 d、 4 6 e (図 9参照 ) を設けているので、 キャップ 4 6のたわみが防止され、 機械的強度 が改善されている。 また、 これらの曲成部 4 6 d、 4 6 eの折り曲げ 幅が小さいことから、 キャップ 4 6により覆われる高周波アンプ部 7 0及びアイソレータ 6 7を目視することができる。 また、 キャップ 4 6により覆われる高周波アンプ部 7 0及びアイ ソレータ 6 7を目視す ることができるので、 高周波ァンプ部 7 0およびアイソレータ 4 7と キャップ 4 6 との嵌合状態も直接目で確認することができるばかりで なく、 高周波アンプ部 7 0およびアイソレータ 4 7 とキャップ 4 6 と の嵌合部に、 必要に応じて半田ペース トまたは導電性接着剤をデイス ペンサ等で塗布する作業も可能となる。 さらに、 マザ一ボード 2 3に 実装後も高周波アンプ部 7 0およびアイ ソレータ 4 7を目視すること ができ、 そのためマザ一ボード 2 3に実装した後に不良が検出された 場合であっても、 不良個所の発見及び修復を容易に行うことができる また、 本実施態様にかかる高周波モジュール 4 0においては、 アイ ソレータ 4 7が基板 4 1に載置されているのではなく、 基板 4 1 の側 面に当接するように固定されているので、 高周波モジュール 4 0全体 の高さを、 アイ ソレータ 4 7の高さに基板 4 1の高さ加えた高さでは なく、 ほぼアイ ソレータ 4 7だけの高さに設定することができ、 薄型 化が達成できる。 このため、 携帯電話等に使用する場合に好適な高周 波モジュールが提供できる。 Further, in the high-frequency module 40 according to the present embodiment, the narrow curved vertical portions 46 d and 46 e (see FIG. 9) are provided on both sides of the cap 46, so that the cap 4 is provided. 6 is prevented and the mechanical strength is improved. Further, since the bent widths of these bent portions 46 d and 46 e are small, the high-frequency amplifier 70 and the isolator 67 covered by the cap 46 can be visually observed. In addition, since the high-frequency amplifier 70 and the isolator 67 covered by the cap 46 can be visually observed, the fitting state between the high-frequency amplifier 70 and the isolator 47 and the cap 46 can be directly checked. Can only do In addition, it is also possible to apply a solder paste or a conductive adhesive with a dispenser or the like to the high-frequency amplifier 70 and the fitting portion between the isolator 47 and the cap 46 as necessary. Furthermore, even after mounting on the motherboard 23, the high-frequency amplifier 70 and the isolator 47 can be visually observed, so that even if a defect is detected after mounting on the motherboard 23, the defect is not affected. In addition, in the high-frequency module 40 according to the present embodiment, the isolator 47 is not mounted on the substrate 41, but the side surface of the substrate 41. The high-frequency module 40 is fixed so that it is in contact with the substrate, so the height of the entire high-frequency module 40 is not the height of the isolators 47 plus the height of the substrate 41, but is almost the height of the isolators 47 only. The thickness can be reduced. For this reason, a high-frequency module suitable for use in a mobile phone or the like can be provided.
さらに、 本実施態様にかかる高周波モジュール 4 0においては、 キ ヤップ 4 6がアイソレータ 4 7に接しているので、 半導体チップ 4 3 が発生する熱がキヤップ 4 6を通してアイソレータ 4 7にも吸収され るため、 放熱性能が上がる。  Furthermore, in the high-frequency module 40 according to the present embodiment, since the cap 46 is in contact with the isolator 47, the heat generated by the semiconductor chip 43 is also absorbed by the isolator 47 through the cap 46. The heat dissipation performance is improved.
尚、 上記実施態様においては、 高周波アンプ部 7 0とアイソレータ 4 7とを接合し、 これら接合した高周波アンプ部 7 0とアイ ソレータ 4 7にキャップ 4 6 を被せることによって高周波モジュール 4 0を構 成しているが、 本発明は、 図 1 0に示されるように、 高周波モジユー ル 4 0からアイ ソレータ 4 7を取り除いた構造を有する高周波モジュ ール 8 0と して具現化することも可能である。  In the above embodiment, the high-frequency amplifier unit 70 and the isolator 47 are joined, and the high-frequency amplifier unit 70 and the isolator 47 that are joined are covered with the cap 46 to constitute the high-frequency module 40. However, as shown in FIG. 10, the present invention can be embodied as a high-frequency module 80 having a structure obtained by removing the isolator 47 from the high-frequency module 40. is there.
さらに、 高周波アンプ部 7 0の一辺の長さとアイ ソレータ 4 7の一 辺の長さとは互いに異なるのが一般的である。 しかし、 本実施態様に かかる高周波モジュール 4 0においては、 図 1 1に示されるように、 アイソレータ 4 7の平面形状を L 1 X L 2の長方形と し、 一辺 L 2の 長さを高周波アンプ部 7 0の一辺の長さ L 2 と一致させているため、 高周波モジュール 4 0全体の形状を四角形とすることができる。 この ため、 高周波モジュール 4 0の取り扱いが容易となるだけでなく、 キ ヤップ 4 6を複雑な形状とする必要がなく、 製造コス トを削減できる 。 また、 アイソレータ 4 7の一辺の長さを高周波アンプ部 7 0の一辺 の長さ L 2 と一致させるベく、 伸張しているため、 アイ ソレータ 4 7 を構成する永久磁石と して、 平面方向において大きな形状を有する永 久磁石 6 1を用いることができ、 その結果、 同じ厚みでより大きな磁 力を発生することが可能となる。 これにより、 必要な磁力を得るため に必要とされる永久磁石 6 1 の厚みを薄くすることができるので、 高 周波モジュール 4 0全体の厚みを薄くすることが可能となる。 また、 アイ ソレータ 4 7の一辺の長さと高周波アンプ部 7 0の一辺の長さ L 2とが一致しており、 これらを接合するだけで高周波モジュール 4 0 全体の形状を四角形とすることができるため、 アイ ソレータ 4 7を基 板 4 1に載置する必要がない。 そのため、 高周波モジュール 4 0全体 の厚みを薄くすることが可能となるだけでなく、 アイソレータ 4 7を 基板 4 1に載置する場合に必要となる種々の加工、 例えばアイソレー タ 4 7が載置された部分において基板 4 1に貫通孔を設ける等の加工 が不要となる。 産業上の利用可能性 Further, the length of one side of the high-frequency amplifier 70 and the length of one side of the isolator 47 are generally different from each other. However, in the high-frequency module 40 according to the present embodiment, as shown in FIG. 11, the planar shape of the isolator 47 is a rectangle of L 1 XL 2 and the length of one side L 2 is the high-frequency amplifier unit 7. Because the length of one side of L is matched to L 2, The whole shape of the high-frequency module 40 can be made square. This not only facilitates the handling of the high-frequency module 40, but also eliminates the need for the cap 46 to have a complicated shape, thereby reducing manufacturing costs. Further, since the length of one side of the isolator 47 is equal to the length L 2 of one side of the high-frequency amplifier 70, the length is extended. In this case, a permanent magnet 61 having a large shape can be used, and as a result, a larger magnetic force can be generated with the same thickness. As a result, the thickness of the permanent magnet 61 required to obtain the required magnetic force can be reduced, so that the entire high-frequency module 40 can be reduced in thickness. In addition, the length of one side of the isolator 47 matches the length L 2 of one side of the high-frequency amplifier 70, and the whole shape of the high-frequency module 40 can be made square by simply joining them. Therefore, it is not necessary to mount the isolator 47 on the substrate 41. Therefore, not only can the overall thickness of the high-frequency module 40 be reduced, but also various processing required when the isolator 47 is mounted on the substrate 41, for example, the isolator 47 is mounted. Processing such as providing a through-hole in the substrate 41 in the portion where it is not required becomes unnecessary. Industrial applicability
以上のように、 本発明にかかる高周波モジュールは放熱特性に優れ るとともに、 小型であり、 しかも製造コス トが低いので、 各種通信機 器、 特に携帯電話等への適用が好適である。  As described above, the high-frequency module according to the present invention has excellent heat radiation characteristics, is small in size, and has low manufacturing costs. Therefore, the high-frequency module is suitable for application to various communication devices, particularly mobile phones.

Claims

請求の範囲 l . マザ一ボードに搭載される高周波モジュールであって、 基板と、 前記基板上に固定された半導体チップと、 前記半導体チップの上方に 設けられたキャップとを備え、 前記キャップは、 前記半導体チップか ら発せられる熱が供給される平板部及び前記平板部の両端から下方へ 延びる延出部とを備え、 前記キャップの前記延出部は、 前記基板の側 面に当接していることを特徴とする高周波モジュール。  Claims 1. A high-frequency module mounted on a mother board, comprising: a substrate; a semiconductor chip fixed on the substrate; and a cap provided above the semiconductor chip. A flat portion to which heat generated from the semiconductor chip is supplied, and an extending portion extending downward from both ends of the flat portion, wherein the extending portion of the cap is in contact with a side surface of the substrate A high-frequency module characterized in that:
2 . 前記キャップの前記延出部が、 前記マザ一ボード上に設けられた 電極に接続されていることを特徴とする請求項 1に記載の高周波モジ ユール。 2. The high-frequency module according to claim 1, wherein the extension of the cap is connected to an electrode provided on the motherboard.
3 . 前記半導体チップと前記キヤップの前記平板部との間に設けられ た天板をさらに備えることを特徴とする請求項 1に記載の高周波モジ ュ—ノレ。 3. The high frequency module according to claim 1, further comprising a top plate provided between the semiconductor chip and the flat portion of the cap.
4 . 前記天板の厚みが、 前記キャップの前記平板部の厚みよりも厚い ことを特徴とする請求項 3に記載の高周波モジュール。 4. The high-frequency module according to claim 3, wherein the thickness of the top plate is larger than the thickness of the flat portion of the cap.
5 . 前記天板がアルミニウムを含むことを特徴とする請求項 4に記載 の高周波モジュール。 5. The high-frequency module according to claim 4, wherein the top plate contains aluminum.
6 . 前記半導体チップが、 前記基板上にフリ ップチップ状に搭載され ていることを特徴とする請求項 1に記載の高周波モジュール。 6. The high-frequency module according to claim 1, wherein the semiconductor chip is mounted on the substrate in a flip-chip shape.
7 . 前記基板上に搭載された非可逆素子をさらに備え、 前記非可逆素 子の上面が、 前記キヤップの前記平板部と接していることを特徴とす る請求項 1 に記載の高周波モジュール。 7. The high-frequency module according to claim 1, further comprising an irreversible element mounted on the substrate, wherein an upper surface of the irreversible element is in contact with the flat portion of the cap.
8 . 前記非可逆素子の側面が、 前記キャップの前記延出部と接してい ることを特徴とする請求項 7に記載の高周波モジュール。 8. The high-frequency module according to claim 7, wherein a side surface of the irreversible element is in contact with the extension of the cap.
9 . マザ一ボードに搭載される高周波モジュールであって、 基板と、 前記基板上に固定された半導体チップと、 前記半導体チップに当接す る突出部を有するヒートシンク と、 前記ヒートシンクに供給された熱 を前記基板に放出する手段とを備える高周波モジュール。 9. A high-frequency module mounted on a mother board, comprising: a substrate; a semiconductor chip fixed on the substrate; a heat sink having a protrusion contacting the semiconductor chip; Means for emitting heat to the substrate.
1 0 . 前記ヒー トシンクの前記突出部が、 前記ヒー トシンクの一端か ら他端にわたって形成されていることを特徴とする請求項 9に記載の 高周波モジュール。 10. The high frequency module according to claim 9, wherein the protrusion of the heat sink is formed from one end to the other end of the heat sink.
1 1 . 前記ヒー トシンクが、 金属アルミニウムの押し出し成形によつ て製造されることを特徴とする請求項 1 0に記載の高周波モジュール 11. The high-frequency module according to claim 10, wherein the heat sink is manufactured by extrusion of metal aluminum.
1 2 . 前記手段が、 前記ヒー トシンクを覆う平板部及び前記平板部の 両端から下方へ延びる延出部とを備えるキヤップによって構成される ことを特徴とする請求項 9に記載の高周波モジュール。 12. The high-frequency module according to claim 9, wherein the means comprises a cap including a flat plate portion covering the heat sink and extending portions extending downward from both ends of the flat plate portion.
1 3 . 前記キャップの前記延出部は、 前記基板の第 1の側面に当接し ていることを特徴とする請求項 1 2に記載の高周波モジュール。 1 4 . 前記キャップの前記延出部が、 前記マザ一ボード上に設けられ た電極に接続されていることを特徴とする請求項 1 3に記載の高周波 モジユーノレ。 13. The high-frequency module according to claim 12, wherein the extension of the cap is in contact with a first side surface of the substrate. 14. The high-frequency module according to claim 13, wherein the extension of the cap is connected to an electrode provided on the motherboard.
1 5 . 前記ヒー トシンクと前記基板との間に形成されるスペースに搭 載された電子部品をさらに備えることを特徴とする請求項 9に記載の 高周波モジュール。 15 5. Install in the space formed between the heat sink and the substrate. 10. The high-frequency module according to claim 9, further comprising an electronic component mounted thereon.
1 6 . 前記電子部品の厚みが、 前記半導体チップの厚みより も厚いこ とを特徴とする請求項 1 5に記載の高周波モジュール。 16. The high-frequency module according to claim 15, wherein a thickness of the electronic component is larger than a thickness of the semiconductor chip.
1 7 . 非可逆素子をさらに備え、 前記非可逆素子の上面が、 前記キヤ ップの前記平板部と接していることを特徴とする請求項 1 3に記載の 高周波モジュール。 17. The high-frequency module according to claim 13, further comprising a non-reciprocal element, wherein an upper surface of the non-reciprocal element is in contact with the flat portion of the cap.
1 8 . 前記非可逆素子の第 1の側面が、 前記基板の前記第 1の側面と 対向する第 2の側面と当接していることを特徴とする請求項 1 7に記 載の高周波モジュール。 18. The high-frequency module according to claim 17, wherein a first side surface of the non-reciprocal element is in contact with a second side surface of the substrate facing the first side surface.
1 9 . 前記基板の前記第 2の側面の長さと、 前記非可逆素子の前記第 1の側面の長さが実質的に等しいことを特徴とする請求項 1 8に記載 の高周波モジュール。 19. The high-frequency module according to claim 18, wherein the length of the second side surface of the substrate is substantially equal to the length of the first side surface of the non-reciprocal element.
2 0 . 前記非可逆素子の第 1の側面と対向する第 2の側面が、 前記キ ャップの前記延出部に当接していることを特徴とする請求項 1 8に記 載の高周波モジュール。 20. The high-frequency module according to claim 18, wherein a second side surface of the non-reciprocal element facing the first side surface is in contact with the extension of the cap.
2 1 . 前記キャップが、 前記平板部の他の両端から下方へ延びる曲成 部を有することを特徴とする請求項 1 2に記載の高周波モジュール。 21. The high-frequency module according to claim 12, wherein the cap has a curved portion extending downward from other ends of the flat plate portion.
2 2 . 前記キヤップの前記平板部から前記曲成部の端部までの長さが 、 前記キヤップの前記平板部から前記延出部の端部までの長さより も 短いことを特徴とする請求項 2 1に記載の高周波モジュール。 WO 01/08221 o PCT/JPOO/0494922. The length of the cap from the flat portion to the end of the bent portion is shorter than the length of the cap from the flat portion to the end of the extension. 21. The high-frequency module according to 1. WO 01/08221 o PCT / JPOO / 04949
. O  . O
2 3 . 前記曲成部は前記基板の側面を覆うことなく、 前記曲成部の前 記端部と前記基板との間に隙間を形成していることを特徴とする請求 項 2 2に記載の高周波モジュール。 23. The bent part according to claim 22, wherein the bent part forms a gap between the end part of the bent part and the substrate without covering a side surface of the substrate. High frequency module.
2 4 . 第 1及び第 2の側面を有する基板、 前記基板上に搭載された半 導体チップ、 及び前記半導体チップ上に設けられたヒートシンクを含 む高周波アンプ部と、 第 1及び第 2の側面を有する非可逆素子と、 平 板部、 第 1の延出部、 及び第 2の延出部を有するキャップとを備え、 前記高周波アンプ部と前記非可逆素子とは、 前記基板の前記第 1の側 面と前記非可逆素子の前記第 1の側面とが当接するように固定されて おり、 前記キヤップと前記高周波アンプ部及び前記非可逆素子とは、 前記キャップの前記平板部が少なく とも前記高周波アンプ部の前記ヒ ートシンクに当接し、 前記キヤップの前記第 1の延出部が前記基板の 前記第 2の側面に当接し、 前記キヤップの前記第 2の延出部が前記非 可逆素子の前記第 2の側面に当接するように固定されていることを特 徵とする高周波モジュール。 24. A substrate having first and second side surfaces, a semiconductor chip mounted on the substrate, a high-frequency amplifier section including a heat sink provided on the semiconductor chip, and first and second side surfaces And a cap having a flat plate portion, a first extension portion, and a second extension portion. And the first side surface of the non-reciprocal element is fixed so as to abut, and the cap, the high-frequency amplifier unit, and the non-reciprocal element are arranged such that at least the flat plate part of the cap is The heat sink of the high-frequency amplifier unit contacts the heat sink, the first extension of the cap contacts the second side surface of the substrate, and the second extension of the cap contacts the non-reciprocal element. Firmly contact the second side. RF module to FEATURE: that it is.
2 5 . 前記基板の前記第 1の側面の長さと前記非可逆素子の前記第 1 の側面の長さが実質的に等しいことを特徴とする請求項 2 4に記載の 高周波モジュール。 25. The high-frequency module according to claim 24, wherein a length of the first side surface of the substrate is substantially equal to a length of the first side surface of the non-reciprocal element.
2 6 . 前記非可逆素子の前記第 1の側面の長さが、 前記非可逆素子の 前記第 1の側面から前記第 2の側面までの距離より も長いことを特徴 とする請求項 2 5に記載の高周波モジュール。 26. The length of the first side surface of the irreversible element is longer than a distance from the first side surface to the second side surface of the irreversible element. The high-frequency module as described.
2 7 . 前記キャップの前記第 1 の延出部は、 前記高周波モジュールが 搭載されるマザ一ボードに電気的に接続されることを特徴とする請求 項 2 4に記載の高周波モジュール。 27. The high-frequency module according to claim 24, wherein the first extension portion of the cap is electrically connected to a mother board on which the high-frequency module is mounted.
2 8 . 前記非可逆素子が上面をさらに有し、 前記キャップの前記平板 部が前記非可逆素子の前記上面に当接していることを特徴とする請求 項 2 4に記載の高周波モジュール。 28. The high-frequency module according to claim 24, wherein the irreversible element further has an upper surface, and the flat plate portion of the cap is in contact with the upper surface of the irreversible element.
WO 01/08221 3Q PCT/JPOO/04949 WO 01/08221 3Q PCT / JPOO / 04949
捕正書の請求の範囲  Claims in the certificate
[ 2 0 0 0年 1 2月 2 0日 （2 0 . 1 2 . 0 0 ) 国際事務局受理：出願当初の請求の 範囲 3は取り下げられた；出願当初の請求の範囲 1 , 4及び 9は補正された； 他の請求の範囲は変更なし。 （2頁）] [2000 1 February 20 (20.1 20.00) Accepted by the International Bureau: Claim 3 originally filed was withdrawn; Claims 1, 4, and 9 originally filed Has been amended; other claims remain unchanged. (2 pages)]
1 . (補正後）マザ一ボードに搭載される高周波モジュールであって、 基板と、 前記基板上に固定された半導体チップと、 前記半導体チップ の上方に設けられたキャップと、 前記半導体チップと前記キャップと の間に設けられた天板とを備え、 前記キャップは、 前記半導体チップ から発せられる熱が供給される平板部及び前記平板部の両端から下方 へ延びる延出部とを備え、 前記キャップの前記延出部は、 前記基板の 側面に当接していることを特徴とする高周波モジュール。  1. (After correction) a high-frequency module mounted on a mother board, comprising: a substrate; a semiconductor chip fixed on the substrate; a cap provided above the semiconductor chip; A top plate provided between the semiconductor chip and the cap, the cap comprising: a flat plate portion to which heat generated from the semiconductor chip is supplied; and extending portions extending downward from both ends of the flat plate portion. The high-frequency module according to claim 1, wherein the extension portion is in contact with a side surface of the substrate.
2 . 前記キャップの前記延出部が、 前記マザ一ボード上に設けられた 電極に接続されていることを特徴とする請求項 1に記載の高周波モジ ユール。 3 . (削除） 2. The high-frequency module according to claim 1, wherein the extension of the cap is connected to an electrode provided on the motherboard. 3. (Delete)
4 . (補正後）前記天板の厚みが、前記キヤップの前記平板部の厚みよ りも厚いことを特徴とする請求項 1に記載の高周波モジュール。 4. The high frequency module according to claim 1, wherein the thickness of the top plate (after correction) is larger than the thickness of the flat plate portion of the cap.
5 . 前記天板がアルミニゥムを含むことを特徴とする請求項 4に記載 の高周波モジュール。 5. The high frequency module according to claim 4, wherein the top plate includes aluminum.
6 . 前記半導体チップが、 前記基板上にフリ ップチップ状に搭載され ていることを特徴とする請求項 1に記載の高周波モジュール。 6. The high-frequency module according to claim 1, wherein the semiconductor chip is mounted on the substrate in a flip-chip shape.
7 . 前記基板上に搭載された非可逆素子をさらに備え、 前記非可逆素 子の上面が、 前記キヤップの前記平板部と接していることを特徴とす る請求項 1に記載の高周波モジュール。 7. The high-frequency module according to claim 1, further comprising an irreversible element mounted on the substrate, wherein an upper surface of the irreversible element is in contact with the flat portion of the cap.
補正された用紙 (条約第 19条) Amended paper (Article 19 of the Convention)
8 . 前記非可逆素子の側面が、 前記キャップの前記延出部と接してい ることを特徴とする請求項 7に記載の高周波モジュール。 8. The high-frequency module according to claim 7, wherein a side surface of the irreversible element is in contact with the extension of the cap.
9 . (補正後）マザ一ボードに搭載される高周波モジュールであって、 基板と、 前記基板上に固定された半導体チップと、 前記半導体チップ に当接する突出部を有するヒートシンクと、 前記ヒートシンクを覆つ て設けられ、 前記ヒートシンクに供給された熱を前記基板の側面に放 出する手段とを備える高周波モジュール。 9. A high-frequency module mounted on a mother board (after correction), comprising: a substrate; a semiconductor chip fixed on the substrate; a heat sink having a protrusion contacting the semiconductor chip; And a means for discharging heat supplied to the heat sink to the side surface of the substrate.
1 0 . 前記ヒートシンクの前記突出部が、 前記ヒートシンクの一端か ら他端にわたって形成されていることを特徴とする請求項 9に記載の 高周波モジュール。 10. The high-frequency module according to claim 9, wherein the protrusion of the heat sink is formed from one end to the other end of the heat sink.
1 1 . 前記ヒートシンクが、 金属アルミニウムの押し出し成形によつ て製造されることを特徴とする請求項 1 0に記載の高周波モジュール。 11. The high-frequency module according to claim 10, wherein the heat sink is manufactured by extrusion of metallic aluminum.
1 2 . 前記手段が、 前記ヒートシンクを覆う平板部及び前記平板部の 両端から下方へ延びる延出部とを備えるキヤップによって構成される ことを特徴とする請求項 9に記載の高周波モジュール。 12. The high-frequency module according to claim 9, wherein the means comprises a cap including a flat plate portion covering the heat sink and extending portions extending downward from both ends of the flat plate portion.
1 3 . 前記キャップの前記延出部は、 前記基板の第 1の側面に当接し ていることを特徴とする請求項 1 2に記載の高周波モジュール。 13. The high-frequency module according to claim 12, wherein the extension of the cap is in contact with a first side surface of the substrate.
1 4 . 前記キャップの前記延出部が、 前記マザ一ボード上に設けられ た電極に接続されていることを特徴とする請求項 1 3に記載の高周波 モジュール。 14. The high-frequency module according to claim 13, wherein the extension of the cap is connected to an electrode provided on the motherboard.
1 5 . 前記ヒ一トシンクと前記基板との間に形成されるスペースに搭 15 5. Install in the space formed between the heat sink and the substrate.
補正された用紙 (条約第 19条) Amended paper (Article 19 of the Convention)
PCT/JP2000/004949 1999-07-26 2000-07-25 High frequency module WO2001008221A1 (en)

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