WO2000073856A3 - Article et procede hybride de modification d'une surface - Google Patents

Article et procede hybride de modification d'une surface Download PDF

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Publication number
WO2000073856A3
WO2000073856A3 PCT/US2000/014797 US0014797W WO0073856A3 WO 2000073856 A3 WO2000073856 A3 WO 2000073856A3 US 0014797 W US0014797 W US 0014797W WO 0073856 A3 WO0073856 A3 WO 0073856A3
Authority
WO
WIPO (PCT)
Prior art keywords
machining
chemical
electrical discharge
discharge machining
grooves
Prior art date
Application number
PCT/US2000/014797
Other languages
English (en)
Other versions
WO2000073856A2 (fr
Inventor
Jeffrey M Johnston
Original Assignee
Bmc Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bmc Ind Inc filed Critical Bmc Ind Inc
Priority to EP00939399A priority Critical patent/EP1145083A2/fr
Priority to KR1020017001315A priority patent/KR20020010562A/ko
Priority to JP2001500912A priority patent/JP2003501687A/ja
Priority to CA002338346A priority patent/CA2338346A1/fr
Priority to MXPA01000994A priority patent/MXPA01000994A/es
Publication of WO2000073856A2 publication Critical patent/WO2000073856A2/fr
Publication of WO2000073856A3 publication Critical patent/WO2000073856A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
    • B23H9/008—Surface roughening or texturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La combinaison ou hybridation de l'usinage chimique (notamment usinage photochimique, usinage chimique ou thermique utilisant une réserve) avec l'usinage par électroérosion permet d'obtenir une méthode d'usinage plus efficace présentant des caractéristiques d'attaque chimique unique et d'amélioration des coûts. La propriété de l'usinage chimique permettant d'usiner avec précision et rapidité un substrat à des profondeurs importantes est alliée à une meilleure planéité des surfaces de paroi ou pente de l'usinage à électroérosion plus lent, mais plus précis, et permet d'obtenir des configurations de surfaces tridimensionnelles dont les caractéristiques faciales sont uniques, obtenues rapidement et de haute qualité. Pour effectuer ce procédé, on a recours à : a) un premier usinage chimique pour obtenir la configuration de base et approcher la profondeur de texturation désirée dans le produit final et améliorer les gorges, les parois et les creux de la surface configurée par un autre usinage à électroérosion, ou b) l'usinage électrochimique pour obtenir une configuration de creux, gorges et parois, et ensuite augmenter la profondeur de ces gorges par usinage chimique (en combinaison avec une réserve sur la surface du plateau de la configuration initiale). Le produit initial obtenu à partir de l'alternative b) peut subir un autre usinage à électroérosion pour améliorer les caractéristiques des gorges.
PCT/US2000/014797 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface WO2000073856A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP00939399A EP1145083A2 (fr) 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface
KR1020017001315A KR20020010562A (ko) 1999-06-01 2000-05-30 혼성 표면 변성방법과 제조품
JP2001500912A JP2003501687A (ja) 1999-06-01 2000-05-30 複合表面変性法及び製品
CA002338346A CA2338346A1 (fr) 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface
MXPA01000994A MXPA01000994A (es) 1999-06-01 2000-05-30 Proceso de modificaciones de superficie hibrida y articulo.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32397999A 1999-06-01 1999-06-01
US09/323,979 1999-06-01

Publications (2)

Publication Number Publication Date
WO2000073856A2 WO2000073856A2 (fr) 2000-12-07
WO2000073856A3 true WO2000073856A3 (fr) 2001-07-19

Family

ID=23261550

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/014797 WO2000073856A2 (fr) 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface

Country Status (6)

Country Link
EP (1) EP1145083A2 (fr)
JP (1) JP2003501687A (fr)
KR (1) KR20020010562A (fr)
CA (1) CA2338346A1 (fr)
MX (1) MXPA01000994A (fr)
WO (1) WO2000073856A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012213787A1 (de) * 2012-08-03 2014-02-06 Robert Bosch Gmbh Oberflächenstrukturierung für zellbiologische und/oder medizinische Anwendungen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4436584A (en) * 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US5342481A (en) * 1991-02-15 1994-08-30 Sony Corporation Dry etching method
WO1998051506A1 (fr) * 1997-05-14 1998-11-19 Seiko Epson Corporation Procede de formation d'ajutage pour injecteurs et procede de fabrication d'une tete a jet d'encre
US5866482A (en) * 1996-09-27 1999-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for masking conducting layers to abate charge damage during plasma etching

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4436584A (en) * 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors
US5342481A (en) * 1991-02-15 1994-08-30 Sony Corporation Dry etching method
US5866482A (en) * 1996-09-27 1999-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for masking conducting layers to abate charge damage during plasma etching
WO1998051506A1 (fr) * 1997-05-14 1998-11-19 Seiko Epson Corporation Procede de formation d'ajutage pour injecteurs et procede de fabrication d'une tete a jet d'encre

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
OKUYAMA ET AL.: "Micromachining with SR and FEL", NUCLEAR INSTRUMENTS AND MEHODS IN PHYSICS RESEARCH B, vol. 144, 1998, pages 58 - 65, XP004142324 *

Also Published As

Publication number Publication date
JP2003501687A (ja) 2003-01-14
MXPA01000994A (es) 2002-06-04
KR20020010562A (ko) 2002-02-04
CA2338346A1 (fr) 2000-12-07
WO2000073856A2 (fr) 2000-12-07
EP1145083A2 (fr) 2001-10-17

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