WO2000042621A3 - Epitaxial thin films - Google Patents
Epitaxial thin films Download PDFInfo
- Publication number
- WO2000042621A3 WO2000042621A3 PCT/US2000/000824 US0000824W WO0042621A3 WO 2000042621 A3 WO2000042621 A3 WO 2000042621A3 US 0000824 W US0000824 W US 0000824W WO 0042621 A3 WO0042621 A3 WO 0042621A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin films
- epitaxial thin
- capacitors
- disclosed
- epitaxial
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 239000002887 superconductor Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000000280 densification Methods 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000446 fuel Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Capacitors (AREA)
- Inert Electrodes (AREA)
- Fuel Cell (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00921311A EP1145252A2 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
AU41656/00A AU774828B2 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
JP2000594127A JP2002535224A (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin film |
US09/889,237 US7033637B1 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
CA002359710A CA2359710C (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
US11/452,591 US20070178227A1 (en) | 1999-01-12 | 2006-06-15 | Epitaxial thin films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11551999P | 1999-01-12 | 1999-01-12 | |
US60/115,519 | 1999-01-12 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/862,605 Division US20050019594A1 (en) | 1999-01-12 | 2004-06-07 | Epitaxial thin films |
US11/452,591 Division US20070178227A1 (en) | 1999-01-12 | 2006-06-15 | Epitaxial thin films |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000042621A2 WO2000042621A2 (en) | 2000-07-20 |
WO2000042621A3 true WO2000042621A3 (en) | 2001-08-02 |
Family
ID=22361922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/000824 WO2000042621A2 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1145252A2 (en) |
JP (2) | JP2002535224A (en) |
CN (1) | CN100385696C (en) |
AU (1) | AU774828B2 (en) |
CA (1) | CA2359710C (en) |
WO (1) | WO2000042621A2 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003092089A2 (en) * | 2002-04-23 | 2003-11-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | High-temperature solid electrolyte fuel cell comprising a composite of nanoporous thin-film electrodes and a structured electrolyte |
CN100365740C (en) * | 2006-04-27 | 2008-01-30 | 西南交通大学 | Buffer layer of high temp superconductive coated conductor |
DE102007024166B4 (en) * | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | A method of processing a metal substrate and using it for a high temperature superconductor |
JP5376500B2 (en) * | 2008-12-04 | 2013-12-25 | 株式会社ノリタケカンパニーリミテド | Oxygen ion conductive ceramic membrane material and manufacturing method thereof |
CN102039264A (en) * | 2009-10-21 | 2011-05-04 | 正峰新能源股份有限公司 | Non-vacuum CIGS (Copper Indium Gallium Selenium) film densification method |
CN102804434A (en) * | 2010-03-26 | 2012-11-28 | 俄亥俄大学 | Engineering of an ultra-thin molecular superconductor by charge transfer |
EP2426684A1 (en) * | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
JP5720001B1 (en) | 2013-05-07 | 2015-05-20 | パナソニックIpマネジメント株式会社 | Proton conductor and proton conducting device |
CN109234679B (en) * | 2018-08-31 | 2020-06-12 | 内蒙古科技大学 | Double-layer PNZST perovskite antiferroelectric film and preparation method thereof |
CN114774844A (en) * | 2022-03-31 | 2022-07-22 | 清华大学 | Method for regulating and controlling flat surface components of thin film at atomic level |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3822904A1 (en) * | 1988-07-06 | 1990-01-11 | Siemens Ag | JOSEPHSON ELEMENT WITH OXIDE-CERAMIC SUPER LADDER MATERIAL AND METHOD FOR PRODUCING THE ELEMENT |
US5027253A (en) * | 1990-04-09 | 1991-06-25 | Ibm Corporation | Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards |
JPH05299584A (en) * | 1992-02-21 | 1993-11-12 | Toshiba Corp | Thin film capacitor element and semiconductor memory device |
JPH07283069A (en) * | 1994-04-07 | 1995-10-27 | Murata Mfg Co Ltd | Dielectric thin film and production thereof |
JPH0864216A (en) * | 1994-08-25 | 1996-03-08 | Tonen Corp | Oxygen ion conductor thin film and manufacture thereof |
JPH09221393A (en) * | 1996-02-13 | 1997-08-26 | Tdk Corp | Lead-containing perovskite type ferroelectric single crystal film and its production |
JP3724049B2 (en) * | 1996-04-17 | 2005-12-07 | 株式会社村田製作所 | Thin film capacitor manufacturing method |
JPH09321361A (en) * | 1996-05-27 | 1997-12-12 | Tdk Corp | Piezoelectric vibrator component and manufacture thereof |
-
2000
- 2000-01-12 JP JP2000594127A patent/JP2002535224A/en active Pending
- 2000-01-12 CN CNB008045860A patent/CN100385696C/en not_active Expired - Fee Related
- 2000-01-12 WO PCT/US2000/000824 patent/WO2000042621A2/en not_active Application Discontinuation
- 2000-01-12 CA CA002359710A patent/CA2359710C/en not_active Expired - Fee Related
- 2000-01-12 AU AU41656/00A patent/AU774828B2/en not_active Ceased
- 2000-01-12 EP EP00921311A patent/EP1145252A2/en not_active Withdrawn
-
2010
- 2010-07-23 JP JP2010166139A patent/JP2011044705A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
Also Published As
Publication number | Publication date |
---|---|
JP2002535224A (en) | 2002-10-22 |
WO2000042621A2 (en) | 2000-07-20 |
CA2359710C (en) | 2008-09-02 |
CA2359710A1 (en) | 2000-07-20 |
AU774828B2 (en) | 2004-07-08 |
CN100385696C (en) | 2008-04-30 |
EP1145252A2 (en) | 2001-10-17 |
JP2011044705A (en) | 2011-03-03 |
CN1526172A (en) | 2004-09-01 |
AU4165600A (en) | 2000-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Peng et al. | BaZr0. 8Y0. 2O3− δ electrolyte with and without ZnO sintering aid: Preparation and characterization | |
Hart et al. | Functionally graded composite cathodes for solid oxide fuel cells | |
JP5022228B2 (en) | Electrolyte sheet with corrugated pattern | |
EP0476808A1 (en) | Process for producing a composite body and use in a solid oxide fuel cell | |
Shi et al. | Wet powder spraying fabrication and performance optimization of IT-SOFCs with thin-film ScSZ electrolyte | |
Lee et al. | Fabrication of solid oxide fuel cells (SOFCs) by solvent-controlled co-tape casting technique | |
JP2012221946A (en) | Solid oxide fuel cell including nanostructure composite air electrode and manufacturing method therefor | |
JPH04332474A (en) | Method of forming electronic conductive composite layer onto base material of device containing solid electrolyte | |
Mehta et al. | Two-layer fuel cell electrolyte structure by sol-gel processing | |
WO2000042621A3 (en) | Epitaxial thin films | |
KR20170038553A (en) | Ceramic interconnects and method of manufacturing the same | |
La O et al. | Microstructural features of RF-sputtered SOFC anode and electrolyte materials | |
KR20110074528A (en) | Electrolyte for an sofc battery, and method of making same | |
BR0112505A (en) | Crystalline thin films with reduced grain thickness | |
Ishii et al. | Fabrication of BSCF-based mixed ionic-electronic conducting membrane by electrophoretic deposition for oxygen separation application | |
Timurkutluk et al. | The role of tape thickness on mechanical properties and performance of electrolyte supports in solid oxide fuel cells | |
Antunes et al. | YSZ/Al2O3 multilayer thick films deposited by spin coating using ceramic suspensions on Al2O3 polycrystalline substrate | |
Badwal et al. | Microstructure of Pt electrodes and its influence on the oxygen transfer kinetics | |
Park et al. | Development of robust YSZ thin-film electrolyte by RF sputtering and anode support design for stable IT-SOFC | |
JP2005503246A (en) | Oxide ion conductive ceramic membrane structure / microstructure, use to separate oxygen from air | |
KR20140043039A (en) | Method for producing solid oxide fuel cells having a cathode-electrolyte-anode unit borne by a metal substrate, and use of said solid oxide fuel cells | |
Menzler et al. | Influence of anode thickness on the power output of solid oxide fuel cells with (La, Sr)(Co, Fe)-type cathode | |
WO2000069008A1 (en) | Electrochemical cell | |
JPH09245813A (en) | Manufacture of solid electrolyte fuel cell | |
CN111587299A (en) | Oxygen permeable member and sputtering target material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 00804586.0 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2000921311 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2359710 Country of ref document: CA Ref document number: 2359710 Country of ref document: CA Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 09889237 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2000 594127 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: IN/PCT/2001/00629/DE Country of ref document: IN |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
WWP | Wipo information: published in national office |
Ref document number: 2000921311 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2000921311 Country of ref document: EP |