WO2000030185A1 - Materiau thermoelectrique a puits quantique applique sur un substrat tres mince - Google Patents

Materiau thermoelectrique a puits quantique applique sur un substrat tres mince Download PDF

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Publication number
WO2000030185A1
WO2000030185A1 PCT/US1999/026996 US9926996W WO0030185A1 WO 2000030185 A1 WO2000030185 A1 WO 2000030185A1 US 9926996 W US9926996 W US 9926996W WO 0030185 A1 WO0030185 A1 WO 0030185A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor material
substrate
conducting
materials
thermoelectric
Prior art date
Application number
PCT/US1999/026996
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English (en)
Other versions
WO2000030185A8 (fr
Inventor
Saeid Ghamaty
Norbert B. Elsner
Original Assignee
Hi-Z Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/192,098 external-priority patent/US6096965A/en
Priority claimed from US09/192,097 external-priority patent/US6096964A/en
Application filed by Hi-Z Technology, Inc. filed Critical Hi-Z Technology, Inc.
Priority to JP2000583095A priority Critical patent/JP4903307B2/ja
Priority to EP99960340A priority patent/EP1155460A4/fr
Priority to AU17238/00A priority patent/AU1723800A/en
Publication of WO2000030185A1 publication Critical patent/WO2000030185A1/fr
Publication of WO2000030185A8 publication Critical patent/WO2000030185A8/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

Definitions

  • thermoelectric devices and in particular to thermoelectric materials for such devices.
  • Thermoelectric devices for cooling and heating and the generation of electricity have been known for many years; however, their use has not been cost competitive except for limited applications.
  • thermoelectric material is measured by its "figure of merit" or Z, defined as where S is the Seebeck coefficient, p is the electrical resistivity, and K is the thermal conductivity.
  • the Seebeck coefficient is further defined as the ratio of the open- circuit voltage to the temperature difference between the hot and cold junctions of a circuit exhibiting the Seebeck effect, or
  • thermoelectric material V/(T h -T c ). Therefore, in searching for a good thermoelectric material, we look for materials with large values of S and low values of p and K.
  • Thermoelectric materials currently in use today include the materials listed below with their figures of merit shown:
  • thermoelectric element having a very large number of very thin alternating layers of semiconductor material having the same crystalline structure.
  • superlattice layers of SiGe with Si as barrier layers demonstrated figures of merit of more than six times better than bulk SiGe. These superlattice layers were grown on a Si substrate using a sputtering technique in an argon atmosphere.
  • Kapton® is a trademark of Dupont Corp. and is used to describe a well-known polyimide material. Films made of this material are also extensively used.
  • thermoelectric elements described in the above two patents represented a major advancement in thermoelectric technology
  • the prior art technology required the removal of the substrate on which the thin layers were laid down.
  • thermoelectric elements for use in a thermoelectric device.
  • the thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin substrate.
  • the layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material.
  • the conducting semiconductor material is doped to create conducting properties.
  • the substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability, strong and flexible.
  • the thin organic substrate is a thin polyimide film (specifically Kapton®) coated with an even thinner film of crystalline silicon.
  • the substrate is about .3 mills (127 microns) thick.
  • the crystalline silicon layer is about 0.1 micron thick.
  • This embodiment includes on each side of the thin Kapton® substrate about 3,000 alternating layers of silicon and silicon- germanium, each layer being about 100 A and the total thickness of the layers being about 30 microns.
  • the silicon layer is applied in an amorphous form and heated to about 350°C to 375°C to crystallize it.
  • the substrate material is thin films of other organic materials or thin films of inorganic materials such as silicon.
  • FIG. 1 is a simple drawing showing an apparatus for making superlattice materials.
  • FIG. 2A is a top view of a preferred deposition chamber for fabricating thermoelectric film.
  • FIG. 2B is a side view of a preferred deposition chamber for fabricating thermoelectric film.
  • FIG. 3 shows an enlarged view of a section of Kapton® tape with alternating layers attached.
  • FIGS. 4A and 4B show the top and bottom views of how copper connections are made to put the elements in series.
  • FIG. 5 A shows how 12 elements could be connected in series to provide 12mV/°C.
  • FIG. 5B shows how the 12 elements could be connected to provide 6 mV/°C from the same 12 elements.
  • FIG. 6 shows an expanded view of a tape with 250 couples connected in series to produce a thermoelectric module for generating 12.5 milliwatts at a 5 volt potential from a 10 °C temperature difference.
  • FIG. 7 shows another deposition technique that will permit the copper connections to be made more easily.
  • FIG. 8 shows the pattern from which thermoelectric elements are cut from the substrate on which grown and also shows a detailed enlarged view of the alternating layers.
  • thermoelectric material is deposited in layers on substrates.
  • heat loss through the substrate can greatly reduce the efficiency of a thermoelectric device made from the material. If the substrate is removed some of the thermoelectric layers could be damaged and even if not damaged the process of removal of the substrate could significantly increase the cost of fabrication of the devices.
  • the present invention provides a substrate that can be retained.
  • the substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible.
  • Kapton is a product of DuPont Corporation. According to DuPont bulletins:
  • Kapton® polyimide film possesses a unique combination of properties that make it ideal for a variety of applications in many different industries.
  • the ability of Kapton® to maintained its excellent physical, electrical, and mechanical properties over a wide temperature range has opened new design and application areas to plastic films.
  • Kapton® is synthesized by polymerizing an aromatic dianhydride and an aromatic diamine. It has excellent chemical resistance; there are no known organic solvents for the film. Kapton® does not melt or burn as it has the highest UL-94 flammability rating: V-0. The outstanding properties of Kapton® permit it to be used at both high and low temperature extremes where other organic polymeric materials would not be functional.
  • Adhesives are available for bonding Kapton® to itself and to metals, various paper types, and other films.
  • Kapton® polyimide film can be used in a variety of electrical and electronic insulation applications: wire and cable tapes, formed coil insulation, substrates for flexible printed circuits, motor slot liners, magnet wired insulation, transformer and capacitor insulation, magnetic and pressure-sensitive tapes, and tubing. Many of these applications are based on the excellent balance of electrical, thermal, mechanical, physical, and chemical properties of Kapton® over a wide range of temperatures. It is this combination of useful properties at temperature extremes that makes Kapton® a unique industrial material.
  • thermoelectric material on these thin flexible substrates provides some important advantages for the design of thermoelectric elements and devices.
  • Ge 0.2 layers were alternatively deposited on the initial crystalline Si layer to make Sio. 8 Ge 0.2 /Si superlattices with each layer being about 100 A thick.
  • the actual deposition configuration is illustrated schematically in FIG. 1.
  • Two Kapton® substrates 2 are mounted on the bottom of platen 4 that rotates at a rate of 1 revolution per minute. The platen is 20 cm in diameter and the substrates are each 5 cm in diameter.
  • Two deposition sources 6 and 8 are mounted on a source flange 7 such that their deposition charges are about 10 cm from the axis 5.
  • Deposition source 6 is pure silicon and deposition source 8 is silicon germanium doped to ⁇ 10 19 carriers per cc.
  • boron for the dopant
  • antimony for the dopant.
  • the rotating platen is positioned 20 cm above the sources. We alternate the plasma so layers of silicon only and silicon and germanium are deposited.
  • the apparatus could be computer controlled to evaporate the sources alternatively at intervals appropriate to achieve the desired thickness while the platen rotates above.
  • Two electroluminescent deposition meters 9 at the side of platen 4 could monitor layer thickness. Layers will continue to build on the substrates until we have a wafer with about 300,000 layers and a thickness of about 0.3 cm, which is the thickness needed for a preferred thermoelectric device.
  • the Kapton® substrate is 0.5 mills or 0.0127 cm thick. The wafer is then diced into chips as indicated in FIG. 8.
  • Test Results The inventors have tested materials produced in accordance with the teachings of this invention.
  • the tested thermoelectric properties of both n-type and p- type samples of Sio. Ge 0 . 2 /Si are compared in Table 1 with the properties of bulk material with the same ratios of Si and Ge.
  • Table 1 The data reported in Table 1 was obtained with thin samples of about 500 alternating layers, each about lOOA thick (for a total layer thickness of about 0.0005cm) deposited on a 1 mill (0.00254cm) Kapton substrate coated with a lOOOA (0.00001cm) silicon layer. All measured values didn't need any correction for the insulating Kapton®.
  • Typical samples comprised about 500 layers (250 each of Si and SiGe) for a total thickness of about 50,000A deposited on a Kapton® film.
  • the samples were about 1 cm 2 so that the element dimensions were about 1cm x 1cm x (0.00254cm + 0.0005cm + 0.00001cm) or about 1cm x 1cm x 0.003cm.
  • Both p-type and n-type thermoelectric elements were prepared and the thermoelectric properties were measured.
  • the test results provided about 1 millivolt per °C per 1cm x 1cm x 0.003cm element.
  • the test results indicated Z values in the range of about 3 x 10 "3 /K to 5 x 10 "3 /K, which are about 10 times larger than Z values for bulk Si 0 8 Ge 02 .
  • Intermediate Crystalline Layer Applicants have shown that a crystal layer laid down between the Kapton substrate and the series of very thin conducting and barrier layers greatly improve thermoelectric performance especially for n-type layers.
  • the preferred technique is to lay it on about 1000 A thick in an amorphous form then to crystallize it by heating the substrate and the silicon layer to about 350° C to 375° C.
  • the crystalline layer could also be germanium or Group 3 - 5 compounds such as GaAs and GaP since these compounds have the same structures as silicon and germanium.
  • Substrates Other than Kapton® Kapton® is an excellent film for the practice of this invention since it has extremely low thermal conductivity and is a very good insulator. It is also strong so the film thickness can be very thin.
  • Suppliers other than DuPont make thin films of polyimide, and substrates of these other polymides could be used. Many other organic materials such as Mylar, polyethylene, and polyamide, polyamide-imides and polyimide compounds could be used as substrates.
  • Other potential substrate materials are Si, Ge and oxide films such as SiO 2 , Al 2 O 3 and TiO 2 . Mica could also be used for substrate.
  • the substrate preferably should be very thin a very good thermal and electrical insulator with good thermal stability, strong and flexible.
  • n-Type and p-Type Material Sputtering equipment for making the n-type and p-type layered material is commercially available from several suppliers such as Kurt J. Lesker Co. with offices in Clairton, Pa.
  • Molecular beam epitaxy is done in a manner similar to the techniques used for the fabrication of X-ray optics. Vacuum is established and maintained by a two-stage mechanical roughing pump and a high-capacity cryogenic pump. The system usually achieves base pressures of approximately 10 "10 torr after bake-out and before deposition. Substrates are mounted on a rotating carousel driven by a precision stepper motor.
  • Well known chemical vapor deposition can also be utilized for laying down the layers of Si, SiGe, Ge and B-C alloys.
  • Substrates can be heated or cooled by the carousel during sputtering. Heating of the substrate during deposition and subsequent annealing is used as a means of controlling the structure and orientation of individual crystalline layers, as well as means of reducing the number of defects in the films. (We can also control the temperature in order to enhance strain within the layers as a function of temperature as discussed later).
  • One of the essential conditions for epitaxial film growth is a high mobility of condensed atoms and molecules on the surface of the substrate. Two lkW magnetrons, each having a 2-5 inch diameter target and a 1 kW power supply, are used to deposit films.
  • the sputter sources are operated at an argon pressure between 0.001 and 0.1 torr. Argon is admitted to the system by a precision flow controller. All functions of the system, including movement of the carousel, rates of heating and cooling, magnetron power, and argon pressure, could be computer controlled.
  • FIG. 2 A is a top view of a preferred deposition chamber for fabricating thermoelectric film.
  • FIG. 2B is a side view sketch.
  • Alternate layers (100 A thick) of Si and SiGe (P doped) are deposited on one side of the tape from sources 44 and 46 and alternate layers of Si and SiGe (n- type) are deposited on the other side from sources 48 and 50.
  • Stepper table 52 steps the tape back and forth so that 1500 layers of Si and 1500 layers of SiGe are deposited to form each thermoelectric element. After the 3000 layers are deposited on each side the tape is advanced toward take up roll 42 to permit a copper connection to be provided at the top and bottom of the top from copper targets 54 and 56. Masks 60 are provided to limit the deposition areas.
  • the completed thermoelectric material includes the 0.5 mil substrate that results in bypass losses of about 5 to 10 percent. This shows the importance of choosing a substrate film as thin as feasible with good thermal and electrical insulating properties.
  • FIG. 3 shows an enlarged view of a section of tape. Elements 62A and 62B are completed and elements 64A, 64B, 66A and 66B are in the deposition process.
  • FIG. 4A is the top view of the tape showing how the top copper connections are made and FIG. 4B is a bottom view showing how the bottom copper connections are made to put the elements in series.
  • FIG. 5 A shows how 12 elements could be connected in series to provide 12mV/°C.
  • FIG. 5B shows how the 12 elements could be connected to provide 6 mV/°C from the same 12 elements.
  • FIG. 6 shows an expanded view of a tape with 250 couples connected in series to produce a thermoelectric module for generating 12.5 milliwatts at a 5 volt potential from a 10 °C temperature difference.
  • FIG. 7 shows another deposition technique that will permit the copper connections to be made more easily.
  • the SiGe ratio could be any composition between about 5 percent Ge to 100 percent Ge; however, the preferred composition is between about 10 percent Ge and about 40 percent Ge.
  • the barrier layer need not be pure silicon. It could be a SiGe solid solution. The overall rational is that the band gap of the barrier layer should be higher than the conducting layer and these band gaps may be adjusted by altering the Si-Ge ratios in the respective layers. Those skilled in the art will envision many other possible variations within its scope. Persons skilled in thermoelectric art are aware of many different dopants other than the ones discussed above which would produce similar effects.
  • n- type dopants include antimony, nitrogen, phosphorus and arsenic.
  • p-type dopants in addition to boron are aluminum, gallium and indium.
  • Persons skilled in the are will recognize that it is possible to produce quantum layers having the same crystalline structures from materials having different crystal structures. For example, epitaxial layers of GeTe and PbTe could be fabricated even though PbTe and GeTe differ slightly in crystalline structure. Many film materials other than the ones identified could be used.
  • the principals of this invention could be used with an array of very small diameter threads, preferable of substrate materials identified such as Kapton®. Accordingly the reader is requested to determine the scope of the invention by the appended claims and their legal equivalents, and not by the examples which have been given.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

La présente invention concerne des éléments thermoélectriques (62A, 64A, 66A, 62B, 64B, et 66B) destinés à être utilisés dans un dispositif thermoélectrique. Ces éléments thermoélectriques comportent un très grand nombre de couches stratifiées de matériau semiconducteur appliquées sur un substrat très mince. Les couches du matériau semiconducteur sont appliquées en alternance entre un matériau semiconducteur à effet barrière et un matériau semiconducteur de conduction, constituant un puits quantique dans les couches minces du matériau semiconducteur de conduction. On dope le matériau semiconducteur de conduction pour lui conférer des propriétés de conduction. De préférence, ce substrat doit être très mince, robuste et flexible, caractérisé par une très bonne isolation thermique et électrique et une excellente stabilité thermique. Dans un mode préféré de réalisation, ce substrat organique mince représente un film en polyimide mince (particulièrement du Kapton®), recouvert d'un film plus mince encore de silicium cristallin. L'épaisseur de ce substrat est d'environ 3 mm (127 microns), et celle de la couche de silicium cristallin est d'environ 0,1 micron. Par ailleurs, ce mode de réalisation comprend de part et d'autre du substrat en Kapton® mince environ 3000 couches stratifiées de silicium et de silicium-germanium, l'épaisseur de chaque couche est d'environ 100 Å alors que l'épaisseur totale des couches atteint environ 30 microns.
PCT/US1999/026996 1998-11-13 1999-11-12 Materiau thermoelectrique a puits quantique applique sur un substrat tres mince WO2000030185A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000583095A JP4903307B2 (ja) 1998-11-13 1999-11-12 極薄基板上の量子井戸熱電材料
EP99960340A EP1155460A4 (fr) 1998-11-13 1999-11-12 Materiau thermoelectrique a puits quantique applique sur un substrat tres mince
AU17238/00A AU1723800A (en) 1998-11-13 1999-11-12 Quantum well thermoelectric material on very thin substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/192,097 1998-11-13
US09/192,098 1998-11-13
US09/192,098 US6096965A (en) 1998-11-13 1998-11-13 Quantum well thermoelectric material on organic substrate
US09/192,097 US6096964A (en) 1998-11-13 1998-11-13 Quantum well thermoelectric material on thin flexible substrate

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WO2000030185A1 true WO2000030185A1 (fr) 2000-05-25
WO2000030185A8 WO2000030185A8 (fr) 2000-09-21

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WO2004105146A1 (fr) * 2003-05-23 2004-12-02 Koninklijke Philips Electronics N.V. Procede de fabrication d'un dispositif thermoelectrique et dispositif thermoelectrique obtenu selon ce procede
WO2008005075A2 (fr) * 2006-06-30 2008-01-10 Caterpillar Inc. Système et procédé de traitement d'un revêtement sur un substrat
WO2008013584A2 (fr) * 2006-07-21 2008-01-31 Caterpillar Inc. Dispositif thermoélectrique
WO2009045862A2 (fr) * 2007-09-28 2009-04-09 Battelle Memorial Institute Dispositifs thermoélectriques
US7559215B2 (en) 2005-12-09 2009-07-14 Zt3 Technologies, Inc. Methods of drawing high density nanowire arrays in a glassy matrix
US7767564B2 (en) 2005-12-09 2010-08-03 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US7834263B2 (en) 2003-12-02 2010-11-16 Battelle Memorial Institute Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting
US7851691B2 (en) 2003-12-02 2010-12-14 Battelle Memorial Institute Thermoelectric devices and applications for the same
FR2946798A1 (fr) * 2009-06-12 2010-12-17 Commissariat Energie Atomique Micro-structure pour generateur thermoelectrique a effet seebeck et procede de fabrication d'une telle micro- structure.
EP2381497A1 (fr) * 2009-01-20 2011-10-26 Shenzhen University Cellule à couche mince à différence de température et son procédé de fabrication
CN102881815A (zh) * 2011-07-14 2013-01-16 索尼公司 热电器件
US8455751B2 (en) 2003-12-02 2013-06-04 Battelle Memorial Institute Thermoelectric devices and applications for the same
WO2013119293A2 (fr) * 2011-11-22 2013-08-15 Research Triangle Institute Nanofilms à l'échelle nanométrique pour un excellent facteur de mérite thermoélectrique
US8658880B2 (en) 2005-12-09 2014-02-25 Zt3 Technologies, Inc. Methods of drawing wire arrays
US9281461B2 (en) 2003-12-02 2016-03-08 Battelle Memorial Institute Thermoelectric devices and applications for the same
CN111816753A (zh) * 2019-06-18 2020-10-23 桂林电子科技大学 一种纸基底碲化铋基纳米线柔性热电偶型温度传感器的制备方法

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DE102009045208A1 (de) * 2009-09-30 2011-04-14 Micropelt Gmbh Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes

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WO2004105146A1 (fr) * 2003-05-23 2004-12-02 Koninklijke Philips Electronics N.V. Procede de fabrication d'un dispositif thermoelectrique et dispositif thermoelectrique obtenu selon ce procede
US7834263B2 (en) 2003-12-02 2010-11-16 Battelle Memorial Institute Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting
US9281461B2 (en) 2003-12-02 2016-03-08 Battelle Memorial Institute Thermoelectric devices and applications for the same
US8455751B2 (en) 2003-12-02 2013-06-04 Battelle Memorial Institute Thermoelectric devices and applications for the same
US7851691B2 (en) 2003-12-02 2010-12-14 Battelle Memorial Institute Thermoelectric devices and applications for the same
US7915683B2 (en) 2005-12-09 2011-03-29 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US7767564B2 (en) 2005-12-09 2010-08-03 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US7559215B2 (en) 2005-12-09 2009-07-14 Zt3 Technologies, Inc. Methods of drawing high density nanowire arrays in a glassy matrix
US8143151B2 (en) 2005-12-09 2012-03-27 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US8658880B2 (en) 2005-12-09 2014-02-25 Zt3 Technologies, Inc. Methods of drawing wire arrays
WO2008005075A3 (fr) * 2006-06-30 2008-12-04 Caterpillar Inc Système et procédé de traitement d'un revêtement sur un substrat
WO2008005075A2 (fr) * 2006-06-30 2008-01-10 Caterpillar Inc. Système et procédé de traitement d'un revêtement sur un substrat
WO2008013584A2 (fr) * 2006-07-21 2008-01-31 Caterpillar Inc. Dispositif thermoélectrique
WO2008013584A3 (fr) * 2006-07-21 2008-09-04 Caterpillar Inc Dispositif thermoélectrique
WO2009045862A3 (fr) * 2007-09-28 2009-11-05 Battelle Memorial Institute Dispositifs thermoélectriques
WO2009045862A2 (fr) * 2007-09-28 2009-04-09 Battelle Memorial Institute Dispositifs thermoélectriques
EP2381497A1 (fr) * 2009-01-20 2011-10-26 Shenzhen University Cellule à couche mince à différence de température et son procédé de fabrication
EP2381497A4 (fr) * 2009-01-20 2014-01-22 Shenzhen Caihuang Entpr & Dev Co Ltd Cellule à couche mince à différence de température et son procédé de fabrication
FR2946798A1 (fr) * 2009-06-12 2010-12-17 Commissariat Energie Atomique Micro-structure pour generateur thermoelectrique a effet seebeck et procede de fabrication d'une telle micro- structure.
CN102449789A (zh) * 2009-06-12 2012-05-09 原子能与替代能源委员会 用于赛贝克效应热电发电机的微结构及制作该微结构的方法
RU2521147C2 (ru) * 2009-06-12 2014-06-27 Коммиссариат А Л'Энержи Атомик Э О Энержи Альтернатив Микроструктура для термоэлектрического генератора на основе эффекта зеебека, и способ получения такой микроструктуры
US8962970B2 (en) 2009-06-12 2015-02-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Microstructure for a Seebeck effect thermoelectric generator, and method for making such a microstructure
WO2010142880A3 (fr) * 2009-06-12 2011-02-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Micro-structure pour générateur thermoélectrique à effet seebeck et procédé de fabrication d'une telle micro-structure
CN102881815A (zh) * 2011-07-14 2013-01-16 索尼公司 热电器件
WO2013119293A2 (fr) * 2011-11-22 2013-08-15 Research Triangle Institute Nanofilms à l'échelle nanométrique pour un excellent facteur de mérite thermoélectrique
WO2013119293A3 (fr) * 2011-11-22 2013-10-03 Research Triangle Institute Nanofilms à l'échelle nanométrique pour un excellent facteur de mérite thermoélectrique
CN111816753A (zh) * 2019-06-18 2020-10-23 桂林电子科技大学 一种纸基底碲化铋基纳米线柔性热电偶型温度传感器的制备方法
CN111816753B (zh) * 2019-06-18 2022-07-12 桂林电子科技大学 一种纸基底碲化铋基纳米线柔性热电偶型温度传感器的制备方法

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EP1155460A1 (fr) 2001-11-21
EP1155460A4 (fr) 2006-12-06
JP2002530874A (ja) 2002-09-17
AU1723800A (en) 2000-06-05
WO2000030185A8 (fr) 2000-09-21
JP4903307B2 (ja) 2012-03-28

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