WO2000025337A1 - Relais micromecanique a contact a effet ressort et procede permettant de le produire - Google Patents
Relais micromecanique a contact a effet ressort et procede permettant de le produire Download PDFInfo
- Publication number
- WO2000025337A1 WO2000025337A1 PCT/EP1999/008016 EP9908016W WO0025337A1 WO 2000025337 A1 WO2000025337 A1 WO 2000025337A1 EP 9908016 W EP9908016 W EP 9908016W WO 0025337 A1 WO0025337 A1 WO 0025337A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- resistance
- contact
- contact surfaces
- control lines
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
Definitions
- the present invention relates to a micromechanical relay with a resilient contact and a method for producing the same.
- Micromechanical relays with dimensions in the sub-mm range have recently been implemented using microtechnology. This extreme miniaturization makes properties possible that stand out from the prior art.
- the switching time in the ⁇ s range, the bounce-free switching behavior and the almost powerless switching due to the electrostatic drive are particularly worth mentioning here.
- the contact capacities of a microrelay are in the fF range. This extremely low value leads to a pronounced insulation capacity when the contact is open, i.e. the coupling of signals into an adjacent circle is sufficiently attenuated even at very high frequencies (GHz range).
- Micromechanical relays and methods for producing the same are known from DE 196 46 667 and DE 197 30 715.
- the resistances built into the control lines avoid resonances caused by coupled signals.
- the current is limited by the resistors, but this is not disadvantageous for the operation of the microrelay, since only charge has to be supplied to generate an electrostatic force between the movable bar and the bottom electrode; a continuous current is not necessary.
- the coupling is also damped by the resistors in the control lines that a microrelay designed in this way is suitable for transmitting frequencies up to 100 GHz.
- FIG. 1 shows the individual steps for the production of a micromechanical relay according to the invention
- FIG. 2 shows the basic structure and the electrical mode of operation.
- FIG. 2 shows a microstrip line with a coupling gap, which can be bridged by a micro relay.
- the contact clip of the microrelay is narrower or as wide as the stripline. If the contact clip is narrower than the strip conductor, the ends that run towards the micro relay can be chamfered. This increases the insulation since the coupling between the strip conductors is damped more due to the smaller coupling area.
- the microrelay is firmly connected to the substrate via an anchor pad. Signals can also reach the opposite strip conductor via this anchor pad.
- the anchor pads must be beveled according to the invention ( Figure 2). This increases the path from the stripline to the anchor pad and prevents overcoupling.
- the coupling is greatly damped by the low contact capacity of the microrelay, so that such a microstrip line, which can be switched with a microrelay, is also suitable for switching very high frequencies in the GHz range.
- a microrelay can transmit high frequencies due to the small dimensions, since the component size is very small compared to the wavelength.
- the switching signal is coupled in via the stripline with low reflection, the control lines are connected to the voltage supply via bond pads and bond wires.
- a NiCr layer is deposited as a resistance layer on an Al 2 O 3 ceramic substrate.
- the surface resistance is in the lOOOhm / square range.
- an adhesive layer for example TiW
- a conductive layer for example gold
- These three layers are structured for the bottom electrode and for control lines, gold being applied with an electrodeposition and subsequently etched to roughen the surface thereof.
- gold and TiW are removed from the control lines in a defined area, so that a NiCr resistor is created (NiCr resistor in the kOhm range).
- the control lines are thus defined as resistance conductors ( Figure la).
- polyimide is spun on, which serves as a spacer between the bottom electrode and the movable electrode. Indentations are etched into this polyimide layer, which also serves as a sacrificial layer (FIG. 1 a). These depressions are made by the subsequent silicon dioxide deposition
- the movable bar is formed, which is characterized by elevations and depressions on the underside of the bar (FIG. 1d).
- the structure of the movable bar is analogous to the prior art disclosed in DE 196 46 667 (FIG. 1b).
- the lower compressive stress layer SiO 2 (1) is deposited thicker than the upper compressive stress layer SiO 2 (2).
- the lower compressive stress layer has a larger volume than the upper, so that the resulting force of the lower compressive stress layer is greater than the upper. After removing the sacrificial layer, this leads to a deformation of the bar upwards.
- a second layer of polyimide is applied.
- This polyimide layer is not only windowed at the free end of the movable bar (as in DE 196 46 667), but also at the points of firm contact (FIG. 1c).
- the two polyimide layers are also removed locally at the clamping point.
- the subsequent metal deposition TiW adhesive layer and electroplating gold
- the conductor tracks are also galvanically reinforced for firm contact. This reinforcement of the conductor track leads to a lower conductor track resistance and thus to an improved volume resistance.
- a metal connection is also made from the fixed end of the movable beam to a control line on the substrate.
- the movable electrode is now connected to the control line and can now be controlled via the NiCr resistor.
- An adhesive layer for example TiW and a gold layer, is deposited on the back of the Al 2 O 3 substrate. This rear-side metallization is necessary for the implementation of the microstrip line from FIG. 2, since it represents the planar electrode with ground contact, while the strip line from FIG. 2 serves as a strip-shaped electrode.
- the microrelay shown in FIG. 1d is formed with deformed movable bars and a voltage-compensated contact clip.
- the distance of the movable bar from the substrate is between 0.1 ⁇ m and 5 ⁇ m at the clamping point and between 0.1 ⁇ m and 100 ⁇ m at the free end.
- the bar length is between l ⁇ m and lOOOO ⁇ m.
- the dome-shaped or cylindrical resilient contact is achieved by the local removal of polyimide below the fixed contact.
- the compressive stress layer SiO 2 (l) pushes the two-layer metal composite upwards.
- the resilient contact is anchored to the substrate via polyimide supports. If the polyimide supports only remain on two sides, a cylindrical surface is formed. The resilient contact is only anchored on two sides like a bridge. On the other hand, if the fixed contact is clamped on all four sides, a dome-shaped contact occurs. A resilient contact is created with both embodiments.
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- Micromachines (AREA)
Abstract
L'invention concerne un relais micromécanique pour commuter des signaux haute fréquence, qui comprend une électrode de masse placée sur un substrat, une contre-électrode mobile avec un étrier de contact électroconducteur, deux lignes de commande pour piloter l'électrode de masse et la contre-électrode et deux surfaces de contact espacées l'une de l'autre par l'intermédiaire d'un espace d'interaction entre électrodes. Lorsqu'une tension électrique est appliquée entre l'électrode de masse et la contre-électrode, l'étrier de contact est déplacé dans le sens de l'électrode de masse, ce qui crée une liaison électrique entre les surfaces de contact. Les deux lignes de commande présentent chacune une résistance de l'ordre du kΦ et sont munies d'un élément de résistance ou d'une chaîne de résistance de l'ordre du kΦ.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19849041 | 1998-10-23 | ||
DE19849041.0 | 1998-10-23 | ||
DE19950373A DE19950373B4 (de) | 1998-10-23 | 1999-10-19 | Mikromechanisches Relais mit federndem Kontakt und Verfahren zum Herstellen desselben |
DE19950373.7 | 1999-10-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000025337A1 true WO2000025337A1 (fr) | 2000-05-04 |
Family
ID=26049722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1999/008016 WO2000025337A1 (fr) | 1998-10-23 | 1999-10-22 | Relais micromecanique a contact a effet ressort et procede permettant de le produire |
Country Status (1)
Country | Link |
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WO (1) | WO2000025337A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959515A (en) * | 1984-05-01 | 1990-09-25 | The Foxboro Company | Micromechanical electric shunt and encoding devices made therefrom |
DE4008832C1 (en) * | 1990-03-20 | 1991-07-18 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | Microswitch operated by electrostatic force - has force electrode of resistance material between end contacts |
EP0665590A2 (fr) * | 1994-01-31 | 1995-08-02 | Canon Kabushiki Kaisha | Microstructure mécanique, son procédé de fabrication et dispositifs incorporant cette structure |
EP0711029A2 (fr) * | 1994-11-07 | 1996-05-08 | Canon Kabushiki Kaisha | Microstructure et procédé pour sa production |
WO1998021734A1 (fr) * | 1996-11-12 | 1998-05-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Procede de production d'un relais micromecanique |
-
1999
- 1999-10-22 WO PCT/EP1999/008016 patent/WO2000025337A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959515A (en) * | 1984-05-01 | 1990-09-25 | The Foxboro Company | Micromechanical electric shunt and encoding devices made therefrom |
DE4008832C1 (en) * | 1990-03-20 | 1991-07-18 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | Microswitch operated by electrostatic force - has force electrode of resistance material between end contacts |
EP0665590A2 (fr) * | 1994-01-31 | 1995-08-02 | Canon Kabushiki Kaisha | Microstructure mécanique, son procédé de fabrication et dispositifs incorporant cette structure |
EP0711029A2 (fr) * | 1994-11-07 | 1996-05-08 | Canon Kabushiki Kaisha | Microstructure et procédé pour sa production |
WO1998021734A1 (fr) * | 1996-11-12 | 1998-05-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Procede de production d'un relais micromecanique |
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