WO2000006793A1 - Ensemble cible de pulverisation - Google Patents

Ensemble cible de pulverisation Download PDF

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Publication number
WO2000006793A1
WO2000006793A1 PCT/US1999/016734 US9916734W WO0006793A1 WO 2000006793 A1 WO2000006793 A1 WO 2000006793A1 US 9916734 W US9916734 W US 9916734W WO 0006793 A1 WO0006793 A1 WO 0006793A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
plate
sputtering
thickness
titanium
Prior art date
Application number
PCT/US1999/016734
Other languages
English (en)
Inventor
Tony Chiang
Peijun Ding
Vikram Pavate
Richard Hong
Ruben Diaz
Barry Chin
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2000006793A1 publication Critical patent/WO2000006793A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • This invention relates to sputtering targets, and more particularly to an improved tantalum sputtering target.
  • Recent developments in the semiconductor device field such as the commercial development of copper interconnects, and the growing popularity of ionized metal plasma deposition, have increased not only the demand for cost effective tantalum sputtering targets, but also the demand for tantalum targets that are mechanically stable despite exposure to high temperature gradients and continuous thermal cycling.
  • a target formed of the to be deposited material is bombarded by energetic ions to dislodge atoms thereof for deposition on a substrate.
  • the target often forms one wall of the vacuum deposition chamber and must therefore have a certain amount of strength.
  • a target assembly As the target is heated by the ion bombardment, its strength should not vary considerably at high temperatures.
  • Two styles of planar target design are typically used: monolithic, wherein the target material is a solid piece, and a target assembly, where target material is affixed to a structural member, commonly called a backing plate.
  • Sputter deposited tantalum and tantalum nitride are the choice materials for forming barrier layers in copper interconnects.
  • sputter deposition of tantalum and tantalum nitride is far from cost effective. Specifically, tantalum itself is expensive, and its expense in addition to its weight (181 atomic mass units) essentially prohibits the use of a monolithic (i.e., a thick solid) sputtering target. Instead a "target assembly" must be used.
  • Most sputtering target assemblies include a backing plate, which typically provides the target with structural rigidity to deter bowing thereof, and a target material plate adhered to the frontside (i.e. the chamber facing side) of the backing plate.
  • a cooling plate having grooves forming a channel is affixed to the backside of the backing plate.
  • cooling fluid is flowed through the channels.
  • a grooved backing plate may function as both a backing plate and a cooling cover plate, allowing cooling fluid to directly contact the back surface of the target material plate.
  • a sputtering target assembly is preferably placed over an aperture formed in a top surface of a chamber such that the target backing plate forms a portion of the chamber enclosure, and such that the target material plate is exposed to the chamber's internal environment, as is the interface between the target material plate and the backing plate.
  • a substrate such as a semiconductor wafer is placed in the chamber facing the sputtering target assembly and the chamber is evacuated to remove water and other contaminants from both the wafer and the chamber.
  • the chamber is then backfilled with an inert gas.
  • a tantalum target is used and the chamber is back filled with an inert gas (e.g., argon)
  • an inert gas e.g., argon
  • a tantalum target is used and the chamber is backfilled with nitrogen and an inert gas (e.g., argon)
  • the nitrogen forms a film on the surface of the tantalum sputtering target such that tantalum nitride is sputtered therefrom.
  • a gas plasma is generated by exposing the gas to a high magnitude electric field which ionizes gas atoms or molecules forming "ionized particles".
  • An electric field is applied to the target to attract the ionized particles to the target, where the ionized particles stride the target, dislodging atoms of target material.
  • the sputtered target atoms leave the target and deposit on the semiconductor wafer forming a thin film. Because of the large energy exchange between the ionized gas atoms and the target material plate, the target plate must be continuously cooled during sputtering to prevent sagging or melting thereof.
  • a sputtering target While cooling a sputtering target prevents the target from melting, it also produces a large thermal gradient across the target as one side of the target is cooled (the side in contact with the cooling cover plate) and the other side of the target is heated by collisions with energetic gas particles. This thermal gradient can cause the target to bow as the heated side of the target expands more than the cooled side.
  • the uniformity of the thickness of the film layer deposited is a function, in part, of the spacing between the target and the substrate. Thus, if only some regions of the target move relative to the deposition surface, the thickness uniformity of the deposited film will suffer.
  • a substantial thermally induced strain results across the target which may eventually cause the target material plate to separate from the backing plate (i.e., to debond) during repeated sputtering operations.
  • target/backing plate debonding occurs the target material bows, resulting in unevenly deposited layers and uneven target erosion, marking the end of the target's useful life, often well before the available target material is deposited. Accordingly, debonding wastes a portion of the expensive tantalum target material, driving up processing costs.
  • debonding and the resulting target bending may cause the target material to fracture—a catastrophic failure that can contaminate the sputtering chamber with large target particles and bonding material (e.g.*,, adhesive, brazing or soldering material). After such a catastrophic failure the sputtering chamber must be totally cleaned, resulting in significant downtime of the sputtering target as well as of upstream and downstream processing equipment which may have been contaminated.
  • IMP deposition ionized metal plasma (IMP) deposition
  • RF coil RF coil
  • target temperatures thermal gradients
  • thermal cycling strain further abbreviating target lifetimes. Accordingly, because of the expense associated with wasted tantalum, a method of extending a tantalum target life is required.
  • Patent No. Application Serial No. 08/511,824 (AMAT No.
  • the Patent (AMAT No. 642) discloses diffusion bonding a tantalum target plate to a titanium backing plate via an interlayer. Regarding the selection of the interlayer material, the Patent (AMAT
  • the interlayer formed on the backing plate is preferably composed of the backing plate material or a high-diffusivity alloy thereof.
  • the Patent (AMAT No. 642) indicates that a relatively soft-conformal material such as aluminum may form an interlayer where the titanium backing plate can readily diffuse.
  • the interlayer is said to adhere metallurgically to the target plate, forming a continuous metallurgical extension of the target material which also levels the bonding surface of the target plate by filling any valleys formed therein.
  • the configuration of the Patent has a, few disadvantages. Namely the titanium backing plate itself is expensive, so although the bond may improve target life and reduce catastrophic failure rates, the thick titanium backing plate increases target assembly costs. Moreover, relatively high temperatures and long bonding times are required in order to achieve a sufficient interdiffusion depth between the tantalum and aluminum layers. Unfortunately, the high temperatures and long bond periods can cause the tantalum target plate to develop large grains. Such large grains in the target material can reduce target life by causing uneven target erosion and unevenly deposited layers. Further, the use of titanium adds significant weight to the overall target assembly.
  • a diffusion bonded tantalum sputtering target assembly having a titanium interlayer and an aluminum backing plate provides a 500% increase in target life when compared to conventional tantalum targets diffusion bonded to an aluminum backing plate.
  • the inventors have found that despite titanium' s high surface hardness values and despite the fact that both titanium and tantalum are refractory metals, titanium and tantalum readily inter-diffuse to a depth sufficient to withstand even the severe thermal gradients and thermal cycling imposed by IMP sputter deposition.
  • the inventive tantalum sputtering target assembly bonds without requiring bonding times or temperatures that effect the tantalum's grain size. Because titanium is light-weight and inexpensive, alloys well with aluminum, and has been found to inter-diffuse readily with tantalum or tantalum nitride, the inventive target assembly is far superior to conventional tantalum target assemblies.
  • an inventive tantalum sputtering target assembly is formed by etching the bonding surfaces of the titanium backing plate and the tantalum sputtering plate, providing an interlayer of titanium (e.g., by sputtering, plating, or providing a sheet of titanium, etc.) and placing the aluminum, titanium, and tantalum layers in a furnace, as further described below.
  • the titanium and tantalum are preferably pure and the aluminum is preferably a commercial grade aluminum alloy such as 6061, 5051 or 5052.
  • the titanium and aluminum inter- diffuse and react chemically forming an aluminum-titanium alloy, and the titanium and tantalum or tantalum nitride inter-diffuse to form a solid solution, resulting in a strong sputtering target assembly that gradually transitions from tantalum to aluminum thereby reducing the probability of debonding which otherwise may occur between the tantalum/interlayer interface.
  • the interdiffused and alloyed region of the inventive sputtering target have a higher tensile strength than do the individual layers of aluminum, titanium or tantalum.
  • the inventive sputtering assembly is less expensive than conventional assemblies, as an inexpensive material (e.g., aluminum) is employed for the backing plate and only a small amount of titanium (a more expensive material) is required for the interlayer .
  • FIG. 1A is a diagrammatic side view of an inventive sputtering target assembly prior to diffusion bonding thereof;
  • FIG. IB is a diagrammatic side view of the inventive sputtering target assembly of FIG. 1A after diffusion bonding thereof;
  • FIG. 2 is a diagrammatic side sectional view of an IMP sputter deposition chamber that employs the inventive sputtering target assembly of FIG. 1.
  • FIG. 1A is a diagrammatic side view of an inventive tantalum sputtering target assembly 11 prior to diffusion bonding thereof.
  • the inventive sputtering target assembly 11 comprises a tantalum sputtering plate 13, an aluminum backing plate 15, and a titanium interlayer 17.
  • the titanium and tantalum are preferably pure and the aluminum is preferably a commercial grade aluminum alloy such as 6061, 5051 or 5052.
  • the sputtering plate 13 is as thick as possible based on weight considerations and on bond strength (described below) , as the thicker the sputtering plate 13, the greater the number of deposition cycles before sputtering plate replacement.
  • the thickness of the aluminum backing plate 15 is chosen to provide sufficient rigidity based on the weight of the target plate 13.
  • the initial interlayer thickness (i.e., the thickness of the interlayer prior to diffusion bonding) is preferably chosen to be as thin as possible yet provide sufficient titanium to achieve the desired diffusion and alloying depths with the tantalum target plate 13 and aluminum backing plate 15, respectively.
  • a one quarter inch target thickness, and an initial titanium layer having a thickness between 10-20 microns is presently preferred to provide optimal performance with minimal cost.
  • the titanium interlayer 17 may be formed by conventional methods known in the art, such as by sputter deposition, providing a sheet of titanium between the titanium and tantalum members, plating, etc.
  • the desired thickness of the titanium interlayer may be deposited (placed, plated, etc.) entirely on the bonding surface of either the tantalum sputtering plate 13 or the aluminum backing plate 15, or may be distributed therebetween in any proportion.
  • the bonding surfaces of both the tantalum sputtering plate 13 and the aluminum backing plate 15 are cleaned to remove oxides (etched, sputter-etched, etc.) immediately before diffusion bonding, and are maintained in an oxygen free environment, preferably with a hydrogen or argon gas purge to remove contaminants.
  • Any known methods and apparatuses for cleaning, transferring and diffusion bonding may be employed to form the inventive sputtering target 11, exemplary methods and apparatuses are disclosed in detail in US Patent No. , Application
  • FIG. IB is a diagrammatic side view of the inventive tantalum sputtering target assembly 11 after diffusion bonding thereof.
  • an inter-diffused region 19 extends on either side of the initial boundary (the initial boundary being represented by dashed line 17a) of the titanium interlayer 17, and has an overall thickness sufficient to provide a strong bond between the tantalum sputtering target 13 and the titanium interlayer 17.
  • the inter-diffused region 19 preferably has a thickness of less than 20 microns, with a thickness of less than 10 microns being preferred in order to provide an optimal balance of high bond strength, short bonding time, and minimal titanium expenditure.
  • the alloyed region 21 extends on either side of the initial boundary (the initial boundary being represented by dashed line 17b) of the titanium interlayer 17, and has an overall thickness sufficient to provide a strong bond between the aluminum backing plate 15 and the titanium interlayer 17.
  • the alloyed region 21 preferably has a thickness of less than 20 microns, with a thickness of less than 10 microns being preferred in order to provide an optimal balance of high bond strength, short bonding time, and minimal titanium expenditure.
  • the inventive tantalum sputtering target 11 gradually transitions from tantalum or tantalum nitride to aluminum.
  • the molecular structure and the coefficient of thermal expansion transitions gradually from substantially the molecular structure and coefficient of thermal expansion of tantalum or tantalum nitride to substantially the molecular structure and coefficient of thermal expansion of titanium.
  • the aluminum-titanium alloy has a molecular structure and coefficient of thermal expansion intermediate the molecular structures and coefficients of thermal expansion of aluminum and titanium. Further the transition between aluminum or titanium and the aluminum-titanium alloy will occur gradually.
  • the inventive sputtering target assembly interdiffuses and alloys so readily, and because titanium and tantalum have such high melting temperatures, the times and temperatures required to achieve sufficient inter-diffused and alloyed depths do not affect the grain size of the sputtering surface 15a of the tantalum sputtering plate 15. Moreover, during exposure to high temperature gradients and repeated thermal cycling (such as during the IMP process described below with reference to FIG. 2) the inventive sputtering target assembly exhibits a surprisingly long useful life, 500% longer than that of conventional diffusion bonded tantalum target assemblies.
  • FIG. 2 is a diagrammatic illustration, in section, of the pertinent portions of an IMP sputtering chamber 23 that employs the inventive sputtering target 11 of FIG. 1.
  • the inventive sputtering target 11 further comprises a cooling cover plate 25, having a plurality of cooling channels 27 formed therein, and an inlet hose 29 and an outlet hose 31 operatively coupled to the cooling channels 27 for supplying cooling fluid thereto.
  • the IMP sputtering chamber 23 contains a wire coil
  • the wire coil 13 is positioned along the inner surface of the IMP sputtering chamber 23, between the sputtering target assembly 11 and a substrate support pedestal 39.
  • the substrate support pedestal 39 is positioned in the lower portion of the IMP sputtering chamber 23 and the sputtering target assembly 11 is mounted in the upper portion of the IMP sputtering chamber 23.
  • the IMP sputtering chamber 23 generally includes a vacuum chamber enclosure wall 41 having at least one gas inlet 43 and having an exhaust outlet 45 operatively coupled to an exhaust pump 47.
  • the sputtering target assembly 11 is electrically isolated from the enclosure wall 41.
  • the enclosure wall 41 is preferably grounded so that a negative voltage (with respect to grounded enclosure wall 41) may be applied to the sputtering target assembly 11 via a DC power supply 49 operatively coupled between the sputtering target assembly 11 and the enclosure wall 41.
  • a controller 51 is operatively coupled to the RF power supply 35, the DC power supply 49, the gas inlet 43 and the exhaust outlet 45.
  • a throttle valve (not shown) operatively coupled to the exhaust outlet 45 is placed in a mid-position in order to maintain the deposition chamber at a desired low vacuum level.
  • a mixture of argon and nitrogen gas is flowed into the IMP sputtering chamber 23 via the gas inlet 43.
  • both a DC power signal is applied to the sputtering target assembly 11 via the DC power supply 49 and an RF power signal is applied to the wire coil 33 via the RF power supply 35, while the gas mixture continues to flow into the IMP sputtering chamber 23 via the gas inlet 43.
  • the DC power applied to the sputtering target assembly 11 causes the argon/nitrogen gas mixture to form a plasma and to generate energized plasma particles which strike the sputtering target assembly 11 causing target atoms to be ejected therefrom.
  • the RF power applied to the coil 33 causes the IMP sputtering chamber 23 and its components to heat rapidly and additionally causes the ejected target atoms to ionize.
  • the present invention provides a cost effective tantalum sputtering target assembly having a long useful life and capable of consistent deposition of high quality layers.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un ensemble cible de pulvérisation de tantale, perfectionné. Cet ensemble (11) comprend une plaque cible (13) de pulvérisation de tantale, ainsi qu'une plaque support (15) d'aluminium, lesquelles sont soudées par diffusion au moyen d'une intercouche de titane (17). Malgré la dureté élevée de sa surface et son point de fusion élevé, le titane constitue une intercouche supérieure, car il se produit une diffusion facile et réciproque entre le titane et le tantale, et le titane réagit avec l'aluminium pour former un alliage de titane-aluminium. Ainsi, la plaque cible de pulvérisation de l'ensemble pulvérisation de l'invention est fixée de manière sûre à la plaque support d'aluminium.
PCT/US1999/016734 1998-07-27 1999-07-22 Ensemble cible de pulverisation WO2000006793A1 (fr)

Applications Claiming Priority (2)

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US12301098A 1998-07-27 1998-07-27
US09/123,010 1998-07-27

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001262329A (ja) * 2000-03-15 2001-09-26 Vacuum Metallurgical Co Ltd 固相拡散接合スパッタリングターゲット組立て体及びその製造方法
WO2002036848A1 (fr) * 2000-10-31 2002-05-10 Nikko Materials Company, Limited Ensemble cible en tantale ou tungstène sur plaque-support en alliage de cuivre, et procédé de production
EP1644143A2 (fr) * 2003-07-14 2006-04-12 Tosoh Smd, Inc. Ensemble cible de pulverisation presentant une plaque de support a faible conductivite et procede de production associe
EP2155419A2 (fr) * 2007-05-04 2010-02-24 H.C. Starck Inc. Cibles de pulvérisation en métal réfractaire à grains fins sans bande avec une orientation cristallographique uniformément aléatoire, procédé de fabrication d'un tel film, et dispositifs et produits à base de film mince
US20110303535A1 (en) * 2007-05-04 2011-12-15 Miller Steven A Sputtering targets and methods of forming the same
US8961867B2 (en) 2008-09-09 2015-02-24 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US9095932B2 (en) 2006-12-13 2015-08-04 H.C. Starck Inc. Methods of joining metallic protective layers
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
WO2017172692A1 (fr) 2016-04-01 2017-10-05 Honeywell International Inc. Ensemble formant cible de pulvérisation cathodique avec couche intermédiaire graduée et procédés de fabrication
RU2708726C2 (ru) * 2017-08-07 2019-12-11 Общество с ограниченной ответственностью "Технологии для медицины" (ООО "Технологии для медицины") Способ нанесения многослойного износостойкого покрытия на рабочую поверхность металлического изделия
US10804063B2 (en) 2016-09-15 2020-10-13 Baker Hughes, A Ge Company, Llc Multi-layer X-ray source fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649502A (en) * 1969-08-14 1972-03-14 Precision Instr Co Apparatus for supported discharge sputter-coating of a substrate
EP0654543A2 (fr) * 1993-11-24 1995-05-24 Applied Materials, Inc. Assemblage intégré de cible de pulvérisation
JPH0959770A (ja) * 1995-08-23 1997-03-04 Hitachi Metals Ltd スパッタリング用ターゲットおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649502A (en) * 1969-08-14 1972-03-14 Precision Instr Co Apparatus for supported discharge sputter-coating of a substrate
EP0654543A2 (fr) * 1993-11-24 1995-05-24 Applied Materials, Inc. Assemblage intégré de cible de pulvérisation
JPH0959770A (ja) * 1995-08-23 1997-03-04 Hitachi Metals Ltd スパッタリング用ターゲットおよびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 07 31 July 1997 (1997-07-31) *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4519981B2 (ja) * 2000-03-15 2010-08-04 アルバックマテリアル株式会社 固相拡散接合スパッタリングターゲット組立て体及びその製造方法
JP2001262329A (ja) * 2000-03-15 2001-09-26 Vacuum Metallurgical Co Ltd 固相拡散接合スパッタリングターゲット組立て体及びその製造方法
WO2002036848A1 (fr) * 2000-10-31 2002-05-10 Nikko Materials Company, Limited Ensemble cible en tantale ou tungstène sur plaque-support en alliage de cuivre, et procédé de production
US6759143B2 (en) 2000-10-31 2004-07-06 Nikko Materials Company, Limited Tantalum or tungsten target-copper alloy backing plate assembly and production method therefor
EP1644143A2 (fr) * 2003-07-14 2006-04-12 Tosoh Smd, Inc. Ensemble cible de pulverisation presentant une plaque de support a faible conductivite et procede de production associe
EP1644143A4 (fr) * 2003-07-14 2008-10-15 Tosoh Smd Inc Ensemble cible de pulverisation presentant une plaque de support a faible conductivite et procede de production associe
US9095932B2 (en) 2006-12-13 2015-08-04 H.C. Starck Inc. Methods of joining metallic protective layers
US9783882B2 (en) 2007-05-04 2017-10-10 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom
EP2155419A2 (fr) * 2007-05-04 2010-02-24 H.C. Starck Inc. Cibles de pulvérisation en métal réfractaire à grains fins sans bande avec une orientation cristallographique uniformément aléatoire, procédé de fabrication d'un tel film, et dispositifs et produits à base de film mince
US20110303535A1 (en) * 2007-05-04 2011-12-15 Miller Steven A Sputtering targets and methods of forming the same
US8961867B2 (en) 2008-09-09 2015-02-24 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US9120183B2 (en) 2011-09-29 2015-09-01 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets
US9293306B2 (en) 2011-09-29 2016-03-22 H.C. Starck, Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
WO2017172692A1 (fr) 2016-04-01 2017-10-05 Honeywell International Inc. Ensemble formant cible de pulvérisation cathodique avec couche intermédiaire graduée et procédés de fabrication
EP3436618A4 (fr) * 2016-04-01 2019-12-25 Honeywell International Inc. Ensemble formant cible de pulvérisation cathodique avec couche intermédiaire graduée et procédés de fabrication
US10804063B2 (en) 2016-09-15 2020-10-13 Baker Hughes, A Ge Company, Llc Multi-layer X-ray source fabrication
RU2708726C2 (ru) * 2017-08-07 2019-12-11 Общество с ограниченной ответственностью "Технологии для медицины" (ООО "Технологии для медицины") Способ нанесения многослойного износостойкого покрытия на рабочую поверхность металлического изделия

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