WO1999063134A1 - Dispositif et procede de culture de cristaux - Google Patents

Dispositif et procede de culture de cristaux Download PDF

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Publication number
WO1999063134A1
WO1999063134A1 PCT/EP1999/003788 EP9903788W WO9963134A1 WO 1999063134 A1 WO1999063134 A1 WO 1999063134A1 EP 9903788 W EP9903788 W EP 9903788W WO 9963134 A1 WO9963134 A1 WO 9963134A1
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WO
WIPO (PCT)
Prior art keywords
variables
fuzzy
controller
model
data
Prior art date
Application number
PCT/EP1999/003788
Other languages
German (de)
English (en)
Inventor
Joachim Aufreiter
Original Assignee
Leybold Systems Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Systems Gmbh filed Critical Leybold Systems Gmbh
Priority to JP2000552324A priority Critical patent/JP2002517367A/ja
Priority to EP99926496A priority patent/EP1007769A1/fr
Priority to KR1020007001200A priority patent/KR20010022606A/ko
Publication of WO1999063134A1 publication Critical patent/WO1999063134A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B11/00—Automatic controllers
    • G05B11/01—Automatic controllers electric
    • G05B11/36—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential
    • G05B11/42—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/0265—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion
    • G05B13/0285—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion using neural networks and fuzzy logic

Definitions

  • the invention relates to a device and a method for growing crystals according to the preambles of claims 1, 6 and 16.
  • Controllers used i.e. controllers with yielding and delayed feedback. If a controller is only to be operated stably, a PI controller is sufficient. It delivers very good steady-state accuracy and, with the correct setting of its parameters, good stabilization at moderate speed. However, a PI controller is no longer sufficient if, with good stabilization, high demands are made on the speed of the control. In this case, a PID controller is used.
  • fuzzy controllers can also be used in complex systems, which include the manufacturing processes of single or polycrystals. Such controllers are used in fuzzy technology (cf. K. Goser, fuzzy technology: fuzzy controllers for complex systems, Phys. Bl. 50, 1994, No. 11, pp. 1064-1067; Preuss: fuzzy control -heuristic control using fuzzy logic ", atp- automation engineering practice, 4/92, pages 176 to 184 and 5/92, pages 239
  • Each neuron first calculates the weighted sum of the outputs of the neurons in front of it. Then it calculates the baseline by taking the weighted
  • Kohonen networks developed by T. Kohonen around 1988 Here, all neurons are linked to the inputs and all other neurons, neighboring neurons become stronger, distant neurons inhibit each other and each input pattern correlates with an active center. Compared to that of David Rummelhard u. a.
  • the generalized backpropagation algorithm with delta rule proposed around 1985 for multilayered artificial neural networks these alternatives have remained of little importance in practice.
  • a training data set is first searched for, on which the neural network is trained.
  • Such a training data record generally consists of a finite number of mutually assigned input and output vectors (series of numbers).
  • Each input vector consists e.g. B. from three numbers (three inputs!) And each output vector from one number (one output).
  • An error backpropation algorithm is then determined.
  • the average error of all outputs of the last layer of the network is calculated.
  • the weights of the individual neurons are then set in such a way that the mentioned error becomes iteratively zero.
  • the Rummelhard artificial neural network is thus a type of iteration machine which, through small, targeted changes in the weights, approaches an optimum, the error minimum.
  • the conventional PID controllers 204 to 206 which are implemented in the PLC 17, remain. They are only corrected by the signals coming from the robustness filter 203. If only controllers 204 to 206 were used, there would be no optimal control because of the multi-size problems. The individual controllers 204 to 206 would have to be corrected manually by the system operator.
  • the conventional controllers 204 to 206 are, however, already able to operate a system, although not optimally. Therefore, the fuzzy controller 201 becomes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Artificial Intelligence (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Software Systems (AREA)
  • Organic Chemistry (AREA)
  • Evolutionary Computation (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Fuzzy Systems (AREA)
  • Medical Informatics (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Feedback Control In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

L'invention concerne un dispositif et un procédé de culture de cristaux. Selon l'invention, des signaux de régulation provenant d'un réseau neuronal sont superposés aux signaux de régulation destinés à un régulateur PID. On obtient ainsi des monocristaux et des polycristaux d'une qualité très élevée en ce qui concerne leur forme extérieure et leur constitution intérieure.
PCT/EP1999/003788 1998-06-04 1999-06-01 Dispositif et procede de culture de cristaux WO1999063134A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000552324A JP2002517367A (ja) 1998-06-04 1999-06-01 結晶成長装置および方法
EP99926496A EP1007769A1 (fr) 1998-06-04 1999-06-01 Dispositif et procede de culture de cristaux
KR1020007001200A KR20010022606A (ko) 1998-06-04 1999-06-01 결정 성장 장치 및 프로세스

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19824838.5 1998-06-04
DE19824838A DE19824838A1 (de) 1998-06-04 1998-06-04 Verfahren zum Herstellen von Kristallen

Publications (1)

Publication Number Publication Date
WO1999063134A1 true WO1999063134A1 (fr) 1999-12-09

Family

ID=7869801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1999/003788 WO1999063134A1 (fr) 1998-06-04 1999-06-01 Dispositif et procede de culture de cristaux

Country Status (5)

Country Link
EP (1) EP1007769A1 (fr)
JP (1) JP2002517367A (fr)
KR (1) KR20010022606A (fr)
DE (1) DE19824838A1 (fr)
WO (1) WO1999063134A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038450A1 (fr) 2006-09-27 2008-04-03 Sumco Techxiv Corporation Appareil et procédé de fabrication d'un monocristal
WO2022141755A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de préparation d'oxyde de gallium de type à résistance élevée basé sur l'apprentissage profond et procédé d'échange de chaleur
WO2022141765A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de prédiction de qualité d'oxyde de gallium de type à résistance élevée et procédé et système de préparation basés sur l'apprentissage profond et la technique de croissance alimentée par film défini par un bord
WO2022141756A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé et système de préparation d'oxyde de gallium basés sur un apprentissage profond, et procédé bridgman-stockbarger
WO2022141760A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de préparation d'oxyde de gallium conducteur basé sur l'apprentissage profond et procédé bridgman

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
KR20030020474A (ko) * 2001-08-29 2003-03-10 주식회사 실트론 잉곳 성장 장치 제어 시스템
TW200706711A (en) 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method
DE102007041632A1 (de) * 2006-09-18 2008-04-03 Sms Demag Ag Verfahren zum Betreiben eines schmelzmetallurgischen Ofens und Ofen
KR100958530B1 (ko) * 2008-01-17 2010-05-19 케이엔디티앤아이 주식회사 연속공정이 가능한 용융 결정화 반응장치 및 이를 포함하는시스템
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
JP5170061B2 (ja) * 2009-11-02 2013-03-27 信越半導体株式会社 抵抗率計算プログラム及び単結晶の製造方法
DE102012202111A1 (de) * 2012-02-13 2013-08-14 Krones Ag Verfahren zur Steuerung und/oder Regelung von Filteranlagen zur Ultrafiltration
JP2017124498A (ja) * 2016-01-12 2017-07-20 財團法人精密機械研究發展中心 射出成形に用いられる製造パラメータの取得方法
CN111984044A (zh) * 2020-07-21 2020-11-24 航天晨光股份有限公司 水平管外冷凝换热试验中双管流量和出口压力协同控制方法
CN112863617A (zh) 2020-12-31 2021-05-28 杭州富加镓业科技有限公司 一种基于深度学习和坩埚下降法的高阻型氧化镓制备方法

Citations (8)

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Publication number Priority date Publication date Assignee Title
EP0310494A2 (fr) * 1987-09-29 1989-04-05 Commissariat A L'energie Atomique Procédé de commande d'une machine de tirage de monocristaux
JPH03177396A (ja) * 1989-12-07 1991-08-01 Nissin Electric Co Ltd 半導体製造装置の温度制御装置
JPH0637021A (ja) * 1992-07-17 1994-02-10 Fuji Electric Co Ltd 学習予測・指示機能付半導体製造装置
DE4301072A1 (de) * 1993-01-16 1994-07-21 Leybold Ag Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
JPH07118090A (ja) * 1993-10-20 1995-05-09 Sumitomo Metal Ind Ltd 単結晶成長方法及びその装置
US5579439A (en) * 1993-03-24 1996-11-26 National Semiconductor Corporation Fuzzy logic design generator using a neural network to generate fuzzy logic rules and membership functions for use in intelligent systems
US5649063A (en) * 1993-10-12 1997-07-15 Lucent Technologies Inc. Feedback process control using a neural network parameter estimator
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Patent Citations (8)

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EP0310494A2 (fr) * 1987-09-29 1989-04-05 Commissariat A L'energie Atomique Procédé de commande d'une machine de tirage de monocristaux
JPH03177396A (ja) * 1989-12-07 1991-08-01 Nissin Electric Co Ltd 半導体製造装置の温度制御装置
US5671335A (en) * 1991-05-23 1997-09-23 Allen-Bradley Company, Inc. Process optimization using a neural network
JPH0637021A (ja) * 1992-07-17 1994-02-10 Fuji Electric Co Ltd 学習予測・指示機能付半導体製造装置
DE4301072A1 (de) * 1993-01-16 1994-07-21 Leybold Ag Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
US5579439A (en) * 1993-03-24 1996-11-26 National Semiconductor Corporation Fuzzy logic design generator using a neural network to generate fuzzy logic rules and membership functions for use in intelligent systems
US5649063A (en) * 1993-10-12 1997-07-15 Lucent Technologies Inc. Feedback process control using a neural network parameter estimator
JPH07118090A (ja) * 1993-10-20 1995-05-09 Sumitomo Metal Ind Ltd 単結晶成長方法及びその装置

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Title
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038450A1 (fr) 2006-09-27 2008-04-03 Sumco Techxiv Corporation Appareil et procédé de fabrication d'un monocristal
EP2071060A1 (fr) * 2006-09-27 2009-06-17 Sumco Techxiv Corporation Appareil et procédé de fabrication d'un monocristal
EP2071060A4 (fr) * 2006-09-27 2010-09-01 Sumco Techxiv Corp Appareil et procédé de fabrication d'un monocristal
US8216371B2 (en) 2006-09-27 2012-07-10 Sumco Techxiv Corporation Single crystal manufacturing apparatus and method
WO2022141755A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de préparation d'oxyde de gallium de type à résistance élevée basé sur l'apprentissage profond et procédé d'échange de chaleur
WO2022141765A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de prédiction de qualité d'oxyde de gallium de type à résistance élevée et procédé et système de préparation basés sur l'apprentissage profond et la technique de croissance alimentée par film défini par un bord
WO2022141756A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé et système de préparation d'oxyde de gallium basés sur un apprentissage profond, et procédé bridgman-stockbarger
WO2022141760A1 (fr) * 2020-12-31 2022-07-07 杭州富加镓业科技有限公司 Procédé de préparation d'oxyde de gallium conducteur basé sur l'apprentissage profond et procédé bridgman
US12024791B2 (en) 2020-12-31 2024-07-02 Hangzhou Fujia Gallium Technology Co. Ltd. Quality prediction method, preparation method and system of high resistance gallium oxide based on deep learning and edge-defined film-fed growth method
US12057199B2 (en) 2020-12-31 2024-08-06 Hangzhou Fujia Gallium Technology Co. Ltd. Preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method

Also Published As

Publication number Publication date
EP1007769A1 (fr) 2000-06-14
DE19824838A1 (de) 1999-12-09
JP2002517367A (ja) 2002-06-18
KR20010022606A (ko) 2001-03-26

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