WO1999053687A1 - Appareil a pixels d'imagerie actifs basse tension a large gamme et son procede d'utilisation - Google Patents

Appareil a pixels d'imagerie actifs basse tension a large gamme et son procede d'utilisation Download PDF

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Publication number
WO1999053687A1
WO1999053687A1 PCT/US1999/007797 US9907797W WO9953687A1 WO 1999053687 A1 WO1999053687 A1 WO 1999053687A1 US 9907797 W US9907797 W US 9907797W WO 9953687 A1 WO9953687 A1 WO 9953687A1
Authority
WO
WIPO (PCT)
Prior art keywords
bootstrap
node
circuit
voltage
photovoltage
Prior art date
Application number
PCT/US1999/007797
Other languages
English (en)
Inventor
James R. Mann
Original Assignee
Lygent, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lygent, Inc. filed Critical Lygent, Inc.
Priority to AU35517/99A priority Critical patent/AU3551799A/en
Publication of WO1999053687A1 publication Critical patent/WO1999053687A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Definitions

  • CMOS complementary metal-oxide-semiconductor
  • CMOS complementary metal-oxide-semiconductor
  • active pixel image sensors typically consists of a photosensitive diode, bipolar transistor
  • CCD charge-coupled device
  • capacitor's charge is initially set to a reference potential during a reset period, allowed to
  • the dynamic range of a pixel is determined by the total charge that can be stored
  • CMOS active pixels are designed
  • optical resolution that is approximately 4x4 micrometers.
  • CMOS technology employs two types of transistors that are, as the
  • NFET's field effect transistors
  • PFET's field effect transistors
  • FET field effect transistor
  • the FET stops
  • the integrating capacitor must first be reset or charged up to some maximum reference
  • threshold voltage typically 1.0 V or more below the supply voltage. Therefore in a 5V
  • the maximum starting voltage on the integrating capacitor is less than 4.0V. If one were to substitute a PFET device that can work up to the maximum positive
  • An NFET follower's output voltage is a threshold voltage
  • Figure 1 shows a block diagram of a first exemplary embodiment of a wide-range
  • active imaging pixel 10 including a reset circuit 12, a photo-measurement circuit 14, and
  • a readout circuit 16 is shown.
  • the bootstrap transistor 24 is gated by the positive supply voltage 28
  • the bootstrap node 32 is
  • bootstrap capacitor 30 is not explicitly instantiated in the exemplary design but is the
  • the reset transistor 26 connects
  • the bootstrap clock 20 to a photovoltage node 34 when the reset input 22 is asserted (i.e.
  • the integrating capacitor is
  • integrating capacitor's 38 magnitude comes from the gate to channel capacitance of a
  • supply voltage 28 and the second positive supply voltage 58 may be a single positive
  • the follower transistor gate 43 is connected to the
  • the select transistor 42 connects the follower transistor 40 to a
  • a readout coupling capacitor 48 connects the photovoltage node's 34
  • the readout coupling capacitor 48 as shown is
  • a current source not shown, which biases the follower transistor 40 toward whichever
  • the reset circuit 12 operation in the wide-range, low- voltage active imaging pixel
  • the first step is to charge the bootstrap node 32 through the
  • bootstrap transistor 24 (which is always on) by asserting the reset input 22.
  • the bootstrap transistor 24 (which is always on) by asserting the reset input 22.
  • node 32 voltage rises to approximately 3.5 volts, which is a threshold voltage below the
  • the bootstrap clock input 20 When the bootstrap clock input 20 is asserted, the bootstrap node 32 rises to a
  • the amount of the increase is given by the product of the supply voltage and the ratio of the
  • the next stage of the measurement process is to allow charge to bleed off the
  • the wide-range, low- voltage active imaging pixel 10 introduces a readout
  • the wide-range, low- voltage active imaging pixel 10 is selected for output, its
  • photovoltage node 34 potential is raised by an amount equal to the ratio of the readout
  • This readout coupling capacitor 48 should be sized to realize a threshold voltage
  • imaging pixel 10 The idea is to overlap a portion of the photovoltage node 34 with the
  • select input's 46 conducting material For instance, in a process using two polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un circuit de pixels d'imagerie actifs basse tension à large gamme conçu pour fournir une tension utile accrue à la photodiode (36) des pixels et au noeud (34) de phototension par mise en application d'une autoélévation et d'un couplage capacitif ainsi qu'un procédé d'utilisation dudit circuit comprenant un circuit de remise à zéro (12) ayant un transistor d'auto-élévation (24) connectant une entrée de remise à zéro (22) à une grille (27) de transistor de remise à zéro; un condensateur d'auto-élévation (30) connectant une entrée (20) d'horloge d'auto-élévation à un noeud (32) d'auto-élévation, le noeud (32) d'auto-élévation étant connecté à la grille (27) du transistor de remise à zéro; un transistor de remise à zéro (26) connectant en série l'entrée (20) d'horloge d'auto-élévation à un circuit de photomesure (14); ainsi qu'un circuit de lecture (16) en parallèle au circuit de photomesure (14). Le circuit de pixels d'imagerie actifs basse tension à large gamme peut également comprendre un circuit de lecture (16) ayant un condensateur de couplage de lecture (48) connecté entre le noeud (34) de phototension du circuit de photomesure et une entrée de sélection (46) du circuit de lecture, l'entrée de sélection (46) étant connectée de manière déclenchée au transistor de sélection (42).
PCT/US1999/007797 1998-04-10 1999-04-09 Appareil a pixels d'imagerie actifs basse tension a large gamme et son procede d'utilisation WO1999053687A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU35517/99A AU3551799A (en) 1998-04-10 1999-04-09 A wide-range, low-voltage active imaging pixel apparatus and method of using thesame

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8133498P 1998-04-10 1998-04-10
US60/081,334 1998-04-10
US09/287,823 1999-04-07

Publications (1)

Publication Number Publication Date
WO1999053687A1 true WO1999053687A1 (fr) 1999-10-21

Family

ID=22163520

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/007797 WO1999053687A1 (fr) 1998-04-10 1999-04-09 Appareil a pixels d'imagerie actifs basse tension a large gamme et son procede d'utilisation

Country Status (2)

Country Link
AU (1) AU3551799A (fr)
WO (1) WO1999053687A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2359355A (en) * 1999-11-12 2001-08-22 Honda Motor Co Ltd A photosensor circuit with a shutter function
US7218349B2 (en) * 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7616242B2 (en) * 2002-08-23 2009-11-10 Micron Technology, Inc. Linear-logarithmic pixel sensors and gain control circuits therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621283A (en) * 1968-04-23 1971-11-16 Philips Corp Device for converting a physical pattern into an electric signal as a function of time utilizing an analog shift register
US3660667A (en) * 1970-06-22 1972-05-02 Rca Corp Image sensor array in which each element employs two phototransistors one of which stores charge
US4023048A (en) * 1975-12-15 1977-05-10 International Business Machines Corporation Self-scanning photo-sensitive circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621283A (en) * 1968-04-23 1971-11-16 Philips Corp Device for converting a physical pattern into an electric signal as a function of time utilizing an analog shift register
US3660667A (en) * 1970-06-22 1972-05-02 Rca Corp Image sensor array in which each element employs two phototransistors one of which stores charge
US4023048A (en) * 1975-12-15 1977-05-10 International Business Machines Corporation Self-scanning photo-sensitive circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2359355A (en) * 1999-11-12 2001-08-22 Honda Motor Co Ltd A photosensor circuit with a shutter function
GB2359355B (en) * 1999-11-12 2004-06-02 Honda Motor Co Ltd A photo-sensor circuit and method
US7218349B2 (en) * 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7616242B2 (en) * 2002-08-23 2009-11-10 Micron Technology, Inc. Linear-logarithmic pixel sensors and gain control circuits therefor

Also Published As

Publication number Publication date
AU3551799A (en) 1999-11-01

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