WO1999052132A1 - Procede et systeme de detection du point d'extremite d'un traitement au plasma, et de fabrication d'un dispositif a semi-conducteurs par ces moyens - Google Patents

Procede et systeme de detection du point d'extremite d'un traitement au plasma, et de fabrication d'un dispositif a semi-conducteurs par ces moyens Download PDF

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Publication number
WO1999052132A1
WO1999052132A1 PCT/JP1999/001675 JP9901675W WO9952132A1 WO 1999052132 A1 WO1999052132 A1 WO 1999052132A1 JP 9901675 W JP9901675 W JP 9901675W WO 9952132 A1 WO9952132 A1 WO 9952132A1
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WIPO (PCT)
Prior art keywords
plasma
processing
end point
emission
light
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PCT/JP1999/001675
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English (en)
Japanese (ja)
Inventor
Toshihiko Nakata
Hideaki Sasazawa
Shinji Sasaki
Shigeru Kakuta
Takanori Ninomiya
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Hitachi, Ltd.
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Publication date
Priority claimed from JP08842498A external-priority patent/JP4041579B2/ja
Priority claimed from JP13877898A external-priority patent/JP4042208B2/ja
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1999052132A1 publication Critical patent/WO1999052132A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a method and an apparatus for detecting an end point of plasma processing, and a method and an apparatus for manufacturing a semiconductor device using the same.
  • the present invention relates to a method and an apparatus for detecting an end point of a plasma processing, and a method and an apparatus for manufacturing a semiconductor device using the same, and is particularly suitable for processing a substrate by plasma generated in a processing chamber.
  • a method and an apparatus therefor Background art
  • Processing using plasma is widely applied to a semiconductor manufacturing process and a substrate manufacturing process for a liquid crystal display device.
  • a high voltage from a high-frequency power supply 5 is applied between an upper electrode 2 and a lower electrode 3 arranged in parallel in a processing chamber 1, and plasma is generated from an etching gas by a discharge between the two electrodes. 6 is generated, and the semiconductor wafer 4 as an object to be processed is etched by the active species.
  • the power supply frequency of the high-frequency power supply 5 is, for example, about 400 kHz.
  • spectroscopic analysis and mass spectrometry have been used for detecting the end point of etching, and among them, as disclosed in Japanese Patent Application Laid-Open No. 6-282525, which is filed in Japan.
  • simple and highly sensitive spectroscopic analysis is widely used.
  • a specific active species is selected from active species such as radicals and ions such as an etching gas, a decomposition product or a reaction product thereof, and the selected species is selected.
  • the light-emitting component 10 is received by a photoelectric conversion element 11 such as a photomultiplier, converted into an electric signal, and has an bandwidth of about 100 to several kHz, which is sufficiently lower than the high frequency power supply for plasma excitation.
  • a photoelectric conversion element 11 such as a photomultiplier
  • the temporal change 15 in the luminescence intensity is observed as shown in Fig. 25, and the luminescence intensity at the change point and its first derivative or second derivative are calculated in advance.
  • the end point E of the etching is determined.
  • the output of the high frequency power supply 5 is stopped by the power supply control device 14. In this method, since the band of the amplifier 12 is sufficiently lower than the plasma excitation frequency, the DC component of the plasma emission is detected.
  • the active species to be selected depends on the type of etching gas. For example, when a silicon oxide film is etched using a fluorocarbon-based etching gas such as CF, the emission spectrum from the reaction product C 0 (219 nm or 483 nm) can be obtained. Measure the emission spectrum (eg, 260 nm) from CF, which is an intermediate product.
  • a fluorocarbon-based etching gas such as CF
  • the end point of the etching can be obtained with a simple configuration.
  • the total area of etched portions tends to decrease, and the absolute amount of reaction products tends to decrease.
  • the luminescence intensity itself decreases, and the amount of change in the luminescence intensity at the end position decreases greatly.
  • the effect of background noise such as the generation of reaction products accompanying the etching of the quartz member and 1Zf noise such as plasma fluctuations becomes relatively large, making it difficult to determine the end point position.
  • a ratio between two emission signals is calculated using an In order to reduce the influence of 1Zf noise, as shown in the method of improving the amplitude of the signal at the time of Instead of detecting the signal, the plasma emission is modulated with a chitva and the modulation signal is used as a reference signal, or the RF signal for plasma generation is used as a reference signal without using a chipper and demodulated with a lock amplifier. A way to do that has been proposed.
  • An object of the present invention is to detect an end point of a processing of a substrate to be processed using plasma, in which the end point of the plasma processing can always be detected stably and with high accuracy without being affected by miniaturization of a pattern to be processed or disturbance. It is an object of the present invention to provide a method and an apparatus therefor, and a semiconductor manufacturing method and an apparatus using the same. Disclosure of the invention
  • a light emission of a plasma during processing of a substrate to be processed is detected, and a signal component that changes from the detected light emission signal of the plasma according to the progress of the processing by the plasma is detected.
  • a signal component that changes from the detected light emission signal of the plasma according to the progress of the processing by the plasma is detected.
  • the end point of the plasma processing is detected based on a change in the intensity of the extracted signal component. Then, the processing of the substrate to be processed is terminated based on the detected end point of the processing by the plasma.
  • plasma is generated inside the processing chamber in which the substrate to be processed is disposed, the substrate is processed by the plasma, the emission of the plasma being processed is detected, and the detected emission of the plasma is detected.
  • a signal component that changes in accordance with the progress of the plasma processing is extracted from the signal at a predetermined cycle, and the end point of the plasma processing is detected based on the change in the intensity of the extracted signal component.
  • the processing of the substrate to be processed is terminated based on the end point of the processing.
  • plasma is generated inside a processing chamber in which a substrate to be processed is disposed, the substrate is processed by the plasma, and the emission intensity of light having a predetermined wavelength of the plasma being processed is detected.
  • the state of processing by plasma is determined from the emission intensity of light of a predetermined wavelength when a predetermined time has elapsed, and the determined state of processing by plasma is compared with preset data. When the state of the processing by the plasma determined by the above is different from the preset data, an abnormal signal is transmitted.
  • the present invention from a plurality of luminescence signals such as reaction products and intermediate products, only an amplitude component that strongly reflects the etching reaction, that is, only an amplitude component that largely changes at the end of etching, is selectively extracted and extracted.
  • unnecessary components can be removed and the signal change at the end point can be greatly expanded. That As a result, it becomes possible to clearly detect the weak signal change at the end point of a finer pattern, which was difficult with the conventional method, and to stably detect the end point of the plasma processing for a longer time. This enables stable end point determination.
  • FIG. 1 is a diagram showing an etching apparatus and an etching end point detection apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a diagram showing the shape of the incident end of the quartz optical fiber
  • FIG. 3 is a diagram showing the cross-sectional shape of the quartz optical fiber bundle.
  • FIG. 4 shows the emission waveform of the C0 component at a wavelength of 219 nm during etching (a), the emission waveform immediately after reaching the end point (b), and the waveform of a sampling signal consisting of a square wave function.
  • Fig. 5 shows the emission waveform of the CF component with a wavelength of 260 nm during etching (a), the emission waveform immediately after reaching the end point (b), and the rectangular shape.
  • FIG. 4 is a diagram showing a waveform (c) of a sampling signal composed of a wave function.
  • FIG. 6 shows the emission signal of the CO component after signal processing (solid line) and the conventional method (dashed line).
  • Fig. 7 shows the CF component after signal processing (solid line) and the conventional method (dashed line).
  • FIG. 4 is a diagram illustrating a light emission signal.
  • FIG. 8 is a diagram showing a signal waveform obtained by dividing the C0 emission signal after signal processing (solid line) by the CF emission signal, and a signal waveform according to the conventional method (broken line).
  • FIG. 9 is a diagram showing an etching device and an etching end point detecting device in a second embodiment of the present invention.
  • FIG. 10 is a diagram showing an etching apparatus and an etching end point detecting apparatus according to a third embodiment of the present invention.
  • FIG. 11 shows an etching apparatus and an etching apparatus according to a fourth embodiment of the present invention.
  • FIG. 3 is a diagram showing a device for detecting a ending point of a vehicle.
  • FIG. 12 is a diagram showing a light emission signal detected for each wafer.
  • FIG. 13 is a diagram showing an etching apparatus and an etching end point detecting apparatus according to a fifth embodiment of the present invention, and
  • FIG. 14 illustrates a sampling method for a light emission waveform of light having a specific wavelength.
  • FIG. 15 is a diagram showing the time change of the sampling value.
  • FIG. 16 is a diagram showing an etching apparatus and an etching end point detecting apparatus according to a sixth embodiment of the present invention.
  • FIG. 17 is a diagram showing the flow of processing until the etching reaction waveform component is extracted after removing the influence of the light emission life time.
  • FIG. 18 is a diagram showing an etching apparatus and an etching end point detecting apparatus according to a seventh embodiment of the present invention.
  • FIG. 19 is a diagram showing a change in light emission waveform due to a difference in pressure inside the processing chamber
  • FIG. 20 is a diagram showing a change in a light emission decay rate curve due to a difference in effective light emission life time. is there.
  • FIG. 21 is a diagram showing an example of a setting screen on the end point determination unit in consideration of a light emission waveform correction process based on a light emission lifetime.
  • FIG. 22 is a diagram showing an example of a change in light transmittance due to a difference in wavelength in the light emission detection window with the elapse of the plasma start time.
  • FIG. 23 is a diagram showing a photolithographic process of a semiconductor manufacturing line in which an etching end point detecting device is introduced in a ninth embodiment of the present invention.
  • FIG. 24 is a view showing a plasma etching apparatus and a conventional etching end point detecting apparatus
  • FIG. 25 is a view showing a time change of the emission intensity of active species by the conventional etching end point detecting apparatus.
  • FIG. 1 shows an etching apparatus and an etching end point detecting apparatus in the first embodiment.
  • the etching end point detection device includes a light emission detection optical system 101 and a signal processing / judgment / control system 201.
  • the etching apparatus is a parallel plate type plasma etching apparatus.
  • the output voltage of the amplifier 38 is modulated, and this high-frequency voltage is distributed by the distributor 39, and is applied between the upper electrode 2 and the lower electrode 3 arranged in parallel in the processing chamber 1, and both electrodes are applied.
  • Plasma 6 is generated from the etching gas by the inter-discharge, and the semiconductor wafer 4 as the object to be processed is etched by the active species. For example, a frequency of about 400 kHz is used as the high frequency signal.
  • the emission 31 from the plasma passes through the quartz window 30 and forms an image on the entrance end 75 of the quartz optical fiber 50 by the quartz lens 32.
  • a certain point 74 on the substrate 4 and the incident end 75 of the quartz optical fiber 50 are in an imaging relationship.
  • a fiber bundle 76 having a rectangular cross-sectional shape corresponding to the plasma emission distribution observed from the quartz window 30 is used as a light receiving part. Is formed. As shown in FIG. 3, the fiber bundle 76 is divided into two regions, a central portion 77 and peripheral portions 78a and 78b. The peripheral portions 78 a and 78 b are connected to the fiber 51, and the peripheral portions 78 a and 78 b are connected to the fiber 52.
  • the fan 51 is connected to the monochromator 53, and the fan 52 is connected to the monochromator 58.
  • the emission spectrum component of a specific active species is selectively extracted, and photoelectric conversion such as photomultiplier is performed.
  • the photoelectric conversion is performed by the elements 54 and 59.
  • the monochromator 53 emits light from the reaction product CO, that is, 21
  • the wavelength component of 9 nm or 4.83.5 nm is detected, and the monochromator 58 detects the emission spectrum from CF as an intermediate product, that is, the wavelength component of 26 O nm.
  • an interference filter instead of a monochromator.
  • the light emission detection optical system 101 as an imaging optical system, it is possible to detect light emission components in a limited area on the wafer, so that the in-plane variation of the film thickness to be processed and the etching rate can be improved. It is possible to reduce the dullness of the end point detection signal due to the in-plane variation of the signal.
  • the light emission signal of the C0 component having a wavelength of 219 nm photoelectrically converted by the photoelectric conversion element 54 is amplified by an amplifier 55 having a band of about 2 MHz, which is sufficiently wider than the high-frequency power for plasma excitation. It is sent to the processing circuit 56.
  • FIG. 4 (a) shows a light emission waveform 70a during etching. The emission intensity changes repeatedly, with the emission process associated with the excitation and decay of active species in the plasma superimposed on the fundamental period of 400 kHz synchronized with the high frequency power for plasma excitation. I understand.
  • the repetition of the peak with the same amplitude at 400 kHz and 180 ° out of phase is due to the upper and lower electrodes. This is due to the fact that the polarities of the applied high-frequency voltages are shifted by exactly 180 ° from each other.
  • FIG. 4 (b) shows the emission waveform 70b of the C0 component immediately after the silicon oxide film has been completely etched, that is, immediately after reaching the end point. It can be seen that the amplitude of the high peak in FIG. 4 (a) is greatly attenuated while the amplitude of the low peak hardly changes in synchronization with the decrease in the amount of the reaction product generated.
  • the emission waveform of the C0 component which is an etching reaction product, has a component that greatly attenuates at the end of etching, even if the component is the same at 400 kHz. It can be seen that components that hardly change are mixed. Therefore, if a lock-in amplifier is simply used, it is not possible to selectively extract only the components that greatly change.
  • a sampling signal 72 composed of a rectangular wave function having a pulse width ⁇ t and a frequency of 400 kHz is generated.
  • the sampling signal 72 is sent to the signal processing circuit 56 after the phase is adjusted by a desired amount according to the light emission waveform by the phase shifter 65 in FIG.
  • the phase adjustment method for example, the luminescence signal 70 from the amplifier 55 is observed with an oscilloscope 63, and as shown in FIGS. 4 (a), (b), and (c), it changes greatly at the end point. Adjust the phase of the sampling signal 72 so that the peak component is sampled.
  • a line 64 from the oscilloscope 63 to the phase shifter 65 in FIG. 1 indicates an operation of adjusting the phase of the sampling signal 72 while observing the waveform.
  • reference numeral 63 is not limited to an oscilloscope but includes various means for detecting the phase of a light-emitting component to be selected from the light-emitting waveform 70a.
  • a means for detecting only a high peak with a binarization circuit or the like to determine the phase of the peak may be used, or a positive / negative timing of a high-frequency signal from the signal generator 37 and a delay until plasma emission.
  • Means for obtaining the phase of a high peak in consideration of time may be used. It is also possible to capture the peak waveform at a timing slightly attenuated from the maximum amplitude by adjusting the amount of phase shift, or to capture the lower peak of the 400 kHz cycle.
  • the amount of phase shift depends on the process conditions such as the processing chamber pressure and etching gas, so that the etching reaction is most strongly reflected, that is, the phase shift at which the amplitude change at the end point is the largest.
  • Light emission waveform is sampled by mining It is desirable to be set to ring.
  • the pulse width ⁇ t be set to a time width at which the amplitude change at the end point is maximized.
  • the emission signal 70 from the amplifier 55 is multiplied by the sampling signal 72, and the emission peak in the section corresponding to the pulse width ⁇ t, that is, the high peak that greatly changes at the end point, is obtained. Selectively detected and output.
  • the output signal from the signal processing circuit 56 is sent to a single-pass filter 57 having a band of about 100 Hz, and an emission signal 80 shown by a solid line in FIG. 6 is obtained.
  • the time t E at which the signal intensity abruptly decays corresponds to the end point of the etching.
  • a broken line 79 is a light emission signal obtained by a conventional DC component detection method.
  • the same signal processing as described above is performed on the wavelength component of 260 nm, and by combining the two emission signals, highly accurate end point detection is realized even for a finer pattern.
  • the emission signal of the CF component with a wavelength of 260 nm photoelectrically converted by the photoelectric conversion element 59 is amplified by an amplifier 60 having a band of about 2 MHz, which is 10 times wider than the high frequency power for plasma excitation, and the signal is processed. Sent to circuit 61.
  • FIG. 5 (a) shows a light emission waveform 71a during etching.
  • the emission intensity change is repeated, with the emission process associated with the excitation and attenuation of the active species in the plasma superimposed on the fundamental period of 400 kHz synchronized with the high-frequency power for plasma excitation.
  • the C0 component Similar to the case of the C0 component, there is a peak with a slightly lower amplitude with a phase shift of 180 ° also at 400 kHz with respect to the repetition of the peak with a period of 400 kHz. This is due to the fact that the polarities of the high-frequency voltages applied to the upper and lower electrodes are exactly 180 ° apart from each other.
  • FIG. 5 (b) shows the emission waveform 71b of the CF component immediately after the silicon oxide film is completely etched, that is, immediately after reaching the end point.
  • the consumption of the intermediate product CF decreased, and the amplitude of the slightly higher peak in Fig. 5 (a) increased significantly, while the amplitude of the lower peak was almost the same. It turns out that it does not change.
  • the emission waveform of the CF component which is an intermediate product of etching, contains a component that greatly increases at the end of etching and a component that hardly changes even at the same 400 kHz component. I understand.
  • the sampling signal generation circuit 69 based on the high-frequency signal of 400 kHz from the signal generator 37, as shown in FIG. As shown in (c), a sampling signal 73 composed of a rectangular wave function having a pulse width ⁇ t and a frequency of 400 kHz is generated.
  • the sampling signal 73 is sent to the signal processing circuit 61 after the phase is adjusted by a desired amount according to the light emission waveform by the phase shifter 68 in FIG.
  • the phase is adjusted by observing the luminescence signal 71 from the amplifier 60 with an oscilloscope 66, for example, as shown in Fig. 5 (a), (b), and (c).
  • the phase of the sampling signal 73 is adjusted so as to sample a high peak component that sometimes changes greatly.
  • a line 67 extending from the oscilloscope 66 to the phase shifter 68 in FIG. 1 indicates an operation of adjusting the phase of the sampling signal 73 while observing the waveform.
  • reference numeral 68 is not limited to an oscilloscope but includes various means for detecting the phase of a light-emitting component to be selected from the light-emitting waveform 71a.
  • a means for detecting only a high peak with a binarization circuit or the like to determine the phase of the peak may be used, or a method for detecting the positive / negative timing of a high-frequency signal from the signal generator 37 and the plasma emission.
  • Means for finding the phase of the high peak in consideration of the delay time may be used. It is also possible to capture the peak waveform at a timing slightly attenuated from the maximum amplitude by adjusting the amount of phase shift, or to capture the lower peak of the 400 kHz cycle.
  • the phase shift amount should be set so that the emission waveform is sampled at the timing at which the etching reaction is most strongly reflected, that is, at the timing at which the amplitude change at the end point is the largest. Is desirable.
  • the pulse width ⁇ t is set to a time width at which the amplitude change at the end point is maximized.
  • the signal processing circuit 61 the light emission signal 71 from the amplifier 60 is multiplied by the sampling signal 73, and the light emission peak in the section corresponding to the pulse width ⁇ t, that is, the high peak that greatly changes at the end point, is obtained. Selectively detected and output.
  • the output signal from the signal processing circuit 61 is sent to a single-pass filter 62 having a band of about 100 Hz, and an emission signal 82 shown by a solid line in FIG. 7 is obtained.
  • the time t E at which the signal intensity increases sharply corresponds to the etching end point.
  • the broken line 81 is a light emission signal obtained by the conventional DC component detection method.
  • the timing at which the etching reaction is most strongly reflected i.e., the ability to sample the plasma emission at the timing when the amplitude change at the end point is the largest, and selectively extract the components synchronized with the etching reaction, It can be seen that the signal change at the end of etching is about twice as large.
  • FIG. 8 shows a signal waveform 84 obtained by dividing the C0 emission signal 80 (FIG. 6) by the CF emission signal 82 (FIG. 7).
  • the dashed line 83 is the result of the division of the two emission signals (dashed line 79 in FIG. 6 and broken line 81 in FIG. 7) obtained by the conventional DC component detection method. It can be seen that the change in the signal at the end point is larger than in the case of the C0 light emission signal 80 alone in FIG.
  • the signal change at the end point of the etching is about the same as the conventional DC component detection method using the signal processing of the present embodiment. It turns out that it is twice as large.
  • the effects of fluctuations and sudden fluctuations of the plasma itself appear in both emission signals in the same manner, and therefore can be canceled out by the above-described arithmetic processing.
  • the signal processing of this embodiment has a greater effect of canceling out plasma fluctuations and fluctuations using two emission signals than the conventional DC component detection method. . This is also one of the major features of the present invention.
  • the end point determination circuit 74 compares the signal strength at the signal change point and its first derivative value or second derivative value with a preset threshold value to accurately determine the etching end point position. It is determined. For example, as shown in FIG. 8, the time t E at which the light emission intensity becomes equal to or less than the threshold IE is determined as the end point.
  • the threshold IE is determined by the equipment conditions such as high-frequency power and pressure, and the thickness, material and etching gas of the film to be processed. Set according to process conditions such as When the end point is detected, the control signal
  • the output of the power amplifier 38 is stopped based on 7 4 c.
  • the light emission of the reaction product or the intermediate product is synchronized with the high frequency power for plasma excitation, but some of the synchronized components reflect the etching reaction, that is, are large at the end point of the etching. Components that change and components that hardly change are mixed.
  • the conventional DC component detection method also detects components that do not change at the end point.
  • unnecessary components are removed by selectively extracting only the amplitude components that greatly change at the end point of the etching from the components synchronized with the high frequency power for plasma excitation, thereby eliminating the unnecessary components and suppressing the signal change at the end point. It is expanding. As a result, not only is it difficult to be affected by so-called 1 / f noise such as gradual fluctuations in plasma emission, it is also possible to accurately detect the progress of etching in fine patterns, and to detect end points with high accuracy. Will be possible.
  • the same amplitude component is extracted not only for the reaction product but also for the intermediate product, and processing such as division and subtraction is performed between the two signals, thereby further expanding the signal change at the end point and increasing the SN ratio.
  • processing such as division and subtraction is performed between the two signals, thereby further expanding the signal change at the end point and increasing the SN ratio.
  • it is possible to realize improvement of the frequency and to cancel sudden fluctuations of the plasma, and it becomes possible to detect the end point with a finer pattern, which has been difficult with the conventional method.
  • the reduction in light transmittance of the window due to the accumulation of reaction products, etc. has the effect that the stable detection operation time is longer than that of the conventional method because the signal change at the end point and the SN ratio are improved.
  • the method for detecting the end point of etching according to the present invention can perform stable detection for a longer time.
  • a means for preventing the light transmittance of the window from decreasing a method of blowing gas into the vicinity of the surface inside the window (the processing chamber side) during the etching process, or attaching a transparent film to the inside of the window is used.
  • there is a method of replacing the film when the light transmittance decreases a method of installing an orifice near the window in the processing chamber, and detecting the emission of plasma through this orifice.
  • the light emission detection optical system 101 as an imaging optical system, it is possible to detect light emission components in a limited area on the wafer. It is possible to reduce the dullness of the end point detection signal due to the in-plane variation of the above.
  • a second embodiment of the present invention will be described with reference to FIG.
  • the basic configuration and functions of the light emission detection optical system 101 and the signal processing / judgment / control system 202 are almost the same as those of the first embodiment.
  • the etching apparatus of the first embodiment is a parallel plate type plasma etching apparatus in which a high frequency power supply for plasma excitation and a high frequency power supply for ion acceleration are shared and have the same frequency. This is called the power supply method, and differs in that both have different power supplies and different frequencies.
  • the upper electrode 2 has a frequency 27 from a high frequency power supply 85 for plasma excitation.
  • a high frequency power of 12 MHz is applied to the lower electrode 3
  • a high frequency power of 800 kHz is applied to the lower electrode 3 from an ion acceleration high frequency power source 86.
  • the etching reaction proceeds mainly in synchronization with the 800 kHz high frequency power applied to the lower electrode 3.
  • the luminescence 31 from the plasma is imaged by the quartz lens 32 through the quartz window 30, and the quartz optical fiber is formed.
  • the emission spectrum of the reaction product CO, 219 nm or 4.83.5 nm is also obtained by the monochromator 53, as in the first embodiment.
  • the wavelength component is measured by the monochromator 58, the emission spectrum of the intermediate product CF, 2
  • the wavelength components of 60 nm are respectively detected and photoelectrically converted by the photoelectric conversion elements 54 and 59.
  • the sampling signal generation circuit 69 is based on the high-frequency signal with a frequency of 800 kHz extracted from the high-frequency power source for ion acceleration 86, as shown in Figs. 4 (c) and 5 (c). And generates sampling signals 72 and 73 composed of a square wave function having a pulse width At and a frequency of 800 kHz. Subsequent signal processing is exactly the same as in the first embodiment, and the signal processing circuits 56 and 61 generate the emission signal of the reaction product C0 and the intermediate signal based on the sampling signals 72 and 73. From the luminescence signal of the product CF, only the amplitude component that reflects the etching reaction and changes greatly at the end point is selectively extracted.
  • the light emission signals after passing through the mouth-pass filters 57 and 62 are the same as those shown in FIGS. 6 and 7, and the signal change at the end point is larger than in the conventional DC component detection method. Further, by performing a division process or the like for both signals in the end point determination circuit 87, a light emission signal in which the signal change at the end point is further enlarged can be obtained as shown in FIG.
  • the end point determination circuit 87 the signal strength at the signal change point, its first derivative, Alternatively, by comparing the second derivative value or the like with a preset threshold value, the etching end point position is accurately determined.
  • the control signal 87c is sent to the control circuit of the etching device (not shown), and based on this, the outputs of the high frequency power supplies 85 and 86 are stopped to terminate the etching.
  • the emission of the reaction product or the intermediate product is synchronized with the ion accelerating high-frequency power, but some of the synchronized components reflect the etching reaction, that is, greatly change at the end of the etching.
  • unnecessary components are removed by selectively extracting only the amplitude components that greatly change at the end point of the etching from the components synchronized with the high frequency power for ion acceleration, thereby expanding the signal change at the end point. ing.
  • 1 / f noise such as gradual fluctuations in plasma emission
  • the effect of increasing the signal change at the end point and improving the SN ratio has the effect of increasing the stable detection operation time as compared with the conventional method.
  • the light emission detection optical system 101 by configuring the light emission detection optical system 101 as an imaging optical system, it is possible to detect light emission components in a limited area on the wafer. It is possible to reduce the dullness of the end point detection signal due to the in-plane variation of the surface and the in-plane variation of the etching rate.
  • the etching apparatus is a parallel plate type plasma etching apparatus as in the second embodiment, and the upper electrode 2 is supplied with high frequency power of a frequency 27.12 MHz from a high frequency power supply 85 for plasma excitation to the lower electrode 2.
  • High-frequency power having a frequency of 800 kHz is applied to the electrode 3 from a high-frequency power source 86 for ion acceleration.
  • the etching reaction proceeds mainly in synchronization with the 800 kHz high-frequency power applied to the lower electrode 3.
  • the light emission detection optical system is configured to form an image on a certain point on the pen niha.
  • the light emission from the plasma After 0 is reflected by a scanning mirror such as a galvano mirror 23, an image is formed on the incident end 25 of the quartz optical fiber 50 by the quartz lens 24.
  • a scanning mirror such as a galvano mirror 23
  • One point 21 on the substrate 4 in the plasma emission region and the incident end 25 of the quartz optical fiber 50 are in an imaging relationship.
  • By rotating the galvano mirror 23 at high speed with the drive system 22, multiple points (black circles) on the wafer 4 can be detected. These luminescence can be sequentially imaged on the incident end 2 ⁇ of the quartz optical fiber 50.
  • the configuration and function of the emission detection optical system 102 and signal processing, judgment, and control system 203 are the drive control of the galvanometer mirror 23 and the rearrangement of the emission signals at each point obtained in time series. This is the same as the second embodiment except that control is added.
  • Light emission detected by the quartz optical fiber 50 is subjected to signal processing, determination, and control processing in the control system 203 in the same manner as in the first and second embodiments.
  • the end point of the etching at each point on the wafer is detected in synchronization with the drive of the galvanometer mirror 23. For example, when the latest end point is detected, the outputs of the high frequency power supplies 85 and 86 are stopped based on the control signal 88c.
  • the plasma emission at an arbitrary point or a plurality of points on the wafer is measured almost simultaneously.
  • the accuracy of the end point determination in a minute aperture pattern is improved.
  • film residue due to insufficient etching, displacement of the underlying film due to over-etching, and damage are reduced.
  • This makes it possible to reduce defects caused by etching during the photolithography process, and to manufacture a high-quality semiconductor device. Diagnosis of in-plane variation of plasma density, variation of film thickness to be processed, variation of etching rate, etc., based on the variation of the emission signal intensity at each point and the variation of the end point time. Deback is possible.
  • the etching apparatus is a parallel plate type plasma etching apparatus, and the high frequency power supply for plasma excitation and the high frequency power supply for ion acceleration are shared. 400 kHz.
  • the configuration and function of the light emission detection optical system 101 are exactly the same as those in the first embodiment, and the signal processing, judgment, and control system 204 also operate from the quartz optical fiber 50 to the end point judgment circuit 89. Since the configuration and function of this embodiment are completely the same as those of the first embodiment, the description is omitted.
  • the end point time is determined by the film thickness to be processed, the pressure, Set in advance from process conditions such as etching gas and etching rate and equipment conditions.
  • the purpose of this embodiment is to manage the over-etching time for each wafer by constantly observing the difference between the actually measured etching end point and the set etching time, and to detect abnormalities such as film thickness and etching rate. I do.
  • the signal processing / judgment / control system 204 of the present embodiment has an end point control unit 91 and an end point management unit 93 added to the first signal processing / judgment / control system 201.
  • the configuration is as follows.
  • the end point control unit 91 sets an etching time t EP based on process and equipment conditions 92 such as a film thickness to be processed, a pressure, an etching gas, an etching rate, and the like, and a control signal 91 c to the power amplifier 38. To output high frequency power and start etching. At the same time, the set etching time information 92a is sent to the end point management unit 93. When the set etching time comes, the output of the power amplifier 38 is stopped based on the control signal 91c. In the end point judgment circuit 89, as shown in FIG. 12, the end points ta, tb, and tc are obtained from the emission signals 96 to 99 detected for each wafer, and the end point time information 90 is managed by the end point. Send it to Unit 93.
  • the end point management unit 93 refers to the applied film thickness information and the etching rate information 94 for each wafer unit or unit, as shown in Fig. 1 and Fig. 2.
  • the set etching time t EP is compared with the actual etching end time ta, tb, tc for each wafer to determine whether there is any abnormality.
  • ⁇ t EP be the allowable limit of the over-etching time.
  • the over-etching time ⁇ tc with respect to the end point tc of the light emission signal 98 falls within the allowable range, but the over-etching times ⁇ ta and ⁇ tb with respect to the light emission signals 96 and 97 exceed the allowable range.
  • an abnormality is detected from the end point management unit 93, for example, the alarm lamp blinks, an alarm sound is emitted by an alarm buzzer, the abnormality is displayed on the display screen, or the external control means or external device is notified.
  • the alarm signal is transmitted.
  • the waveform 99 does not reach the end point within the set etching time t EP.
  • an abnormality is also issued.
  • the wafers corresponding to the waveforms 96 and 97 are excluded from the line, the state of the underlayer is checked, and the wafer corresponding to the waveform 990 is subjected to additional etching after measuring the remaining film.
  • the end point management unit 93 further calculates a predicted end point value for each wafer or each lot based on the processed film thickness information and the etching rate information 94, and calculates the predicted value and the measured value ta. , Tb, and tc are compared, and if the difference exceeds a certain allowable range, a sudden film thickness abnormality or an etch rate abnormality is reported, and an abnormality is reported.
  • the present embodiment similarly to the first and second embodiments, it is possible to detect an end point with high accuracy in etching a fine pattern. In addition, it is possible to detect an abnormality such as an etching rate. As a result, film residue due to insufficient etching, and displacement and damage of the underlying film due to overetching are reduced. This makes it possible to reduce defects caused by etching during the photolithography process, and to manufacture a high-quality semiconductor device.
  • FIG. Fig. 13 Although the basic configuration is the same as that of the plasma etching apparatus shown in FIG. 1, parts other than those necessary for describing the fifth embodiment are omitted for the sake of simplicity.
  • a high frequency voltage from a high frequency power supply 38 is supplied in parallel to each other in a processing chamber 1 into which an etching gas is introduced. Is applied between the electrodes, and a plasma 6 is generated by the discharge between the electrodes 2 and 3.
  • the semiconductor wafer 4 is etched by the active species generated by the plasma 6.
  • the plasma emission from the plasma 6 during the etching process is generated by an imaging optical system using a quartz lens 32 through a quartz window 30 in order to constantly monitor and control the progress of the etching process.
  • An image is formed on the incident end 75 of the quartz optical fiber 50 which has an image forming relationship with a certain point in the light emitting region of the plasma 6.
  • the light from the plasma 6 imaged at the incident end 75 enters the monochromator (or interference filter) 53 via the quartz optical fiber 50, and the monochromator 53 emits specific light of the active species.
  • the wavelength components of the spectrum are selectively extracted.
  • the light emission spectrum extracted by the monochromator 53 is photoelectrically converted by the photoelectric conversion element 54.
  • the waveform of the emission intensity signal from the plasma 6 photoelectrically converted by the photoelectric conversion element 54 becomes: The shape is as shown in FIG.
  • the sampling signal generation circuit 69 generates a sampling signal having the same frequency as the power supply frequency of the high frequency power supply 38, and inputs the generated signal to the A / D converter 118.
  • the high-frequency power supply 38 generally has a power supply frequency of several hundred kHz to several tens MHz.
  • a few GHz higher than the power supply frequency Sampling frequency is required, but it is difficult to obtain stable operation at such high frequencies with currently available AZD converters.
  • the sampling signal from the sampling signal generation circuit 69 is not used directly as the sampling frequency, but a value obtained by multiplying that frequency by N / (N + 1) is sent to the AZD converter 110. Used as sampling frequency for
  • the emission waveform 140 is set as shown in FIG. 14 as sampling points 14 1, 14 2, 14 3,. Sampling is performed with a slightly different phase for each cycle (such a sampling method is called undersampling). When sampling is performed in this manner, a light emission waveform 140 for one cycle is detected for the first time in N samplings, as shown as a detected waveform 150 in FIG. At this time, if N is set to a sufficiently large value, for example, 100 or more, the emission waveform 140 can be accurately reproduced. If the power frequency of the high-frequency power supply 38 is unstable at that time, sampling is performed N times more than once and the average value is used as the detection waveform 150 to obtain An averaged waveform can be obtained.
  • the analog emission waveform 140 input from the photoelectric converter 54 to the AZD converter 110 is converted to digital waveform data 144, 144, 1 43 by the A / D converter 110.
  • the end point determination unit 74 it is determined whether or not the end point time position has been reached from a change in the emission intensity of the specific wavelength light depending on the etching reaction. end point When it is determined that the time position has been reached, the application of the high frequency voltage by the high frequency power supply 38 is stopped in response to the signal from the end point determination unit 74.
  • FIG. 16 Next, a sixth embodiment will be described with reference to FIGS. 16 and 17.
  • FIG. 16 Next, a sixth embodiment will be described with reference to FIGS. 16 and 17.
  • the fifth embodiment is performed until the A / D converter 110 processes the AZD conversion of the signal obtained by detecting the emission of the plasma 6 and performing photoelectric conversion. This is the same as that described in the example.
  • This embodiment is different from the fifth embodiment in that the end point of the plasma processing is detected in consideration of the emission lifetime of the active species in the plasma 6.
  • the AZD converter 110 detects the emission waveform of the emission spectrum of the active species in the same manner as in the fifth embodiment.
  • the power supply frequency of the high-frequency power supply 38 is increased to several MHz or more, the cycle T of the power supply frequency and one cycle of the emission waveform synchronized therewith become about several hundred ns, and the emission lifetime of the active species (several ns) This is because the effect of (.about.100 ns) on the shape of the emission waveform cannot be ignored.
  • FIG. 17 (A) shows the light emission waveform in such a state. As shown in FIG.
  • the amplitude of the light emission waveform 17 1 of the specific wavelength light during the etching process is small, and It becomes difficult to make the waveform components synchronized with the pitching reaction visible. This is because the emission life time of the active species generated by the etching reaction becomes so long as to be negligible compared to the period T of the plasma excitation frequency, and the attenuation of the emission of the active species is superimposed on the amplitude. It is.
  • a waveform corrector 112 is placed in front of the end point determination unit 74 to correct the effect of the emission lifetime of the active species on the shape of the emission waveform. . That is, the light emission waveform from the AZD converter 110 is affected by the light emission lifetime of the active species, and the force observed as the light emission waveform 17 1 shown in FIG. 17 (A), for example, the light emission waveform
  • the effect of the luminescence life time can be removed, and the deconvolution as shown in Fig. 17 (B) can be eliminated.
  • a light emission waveform 17 2 after the irradiation is obtained.
  • the end point of the etching reaction is determined by the end point determination unit 74 in the same manner as in the fifth embodiment.
  • the waveform component region corresponding to the etching reaction near the peak value I s of the light emission waveform 172 after deconvolution is subjected to digital signal processing, and the result is shown in FIG. 17 (C).
  • the etching reaction component waveform 173 as shown below is extracted, and the end point of the etching reaction is determined by the end point determination unit 74 using the extracted data.
  • FIG. 18 shows, similarly to FIG. 16, the configuration of the parallel plate type etching apparatus shown in FIG. 13 after the quartz optical fiber 50.
  • the difference between the configuration in FIG. 18 and the configuration in FIG. 16 is that, in the configuration in FIG. 18, the processing chamber 1 and the waveform corrector 112 are connected to each other to obtain information on the pressure in the processing chamber.
  • the luminescence life time of the active species in the plasma changes due to the pressure inside the processing chamber 1.
  • Plasma emission occurs when an atom or molecule excited to a higher energy level transitions to a lower energy level, and the energy difference is emitted as light.
  • the rate at which excited atoms or molecules collide with other atoms or molecules is lower than at higher pressures (atomic or molecular The mean free path is longer), and the effective emission lifetime of the excited atom or molecule is longer than when the pressure is high.
  • the effect of the superposition due to the decay of the light emission is greater when the pressure is low than when the pressure is high.
  • the emission waveform 190 of the active species in the plasma decreases as the pressure decreases.
  • 192 the effect of light emission attenuation increases, and the amplitude change in the light emission waveform decreases.
  • the attenuation factor of the emission time t when the r e ff and effective radiative lifetime, exp - expressed as (t / r e ff).
  • an attenuation rate curve is obtained as shown in FIG.
  • the effective emission lifetime eff is shorter, and thus the processing chamber pressure is higher, the decay rate increases, and the effect of the luminescence decay quickly converges accordingly.
  • a light emission decay rate curve corresponding to the processing chamber pressure is prepared in advance, and the pressure inside the processing chamber obtained via the processing chamber pressure data line 113 or the plasma processing is obtained. If the luminescence waveform is corrected using the prepared decay rate curve based on the set pressure at the time of application, the influence of the superposition due to the decay of the luminescence of the active species will be more accurate. Can be removed.
  • Fig. 21 shows the end point determination unit 74 in consideration of such correction processing.
  • 5 shows an example of a setting screen in. The user can directly set the light emission life time, the high frequency power supply frequency (RF frequency) and the chamber (processing chamber) pressure for the light emission waveform actually observed, or input the light from another system. By using this parameter, parameters for correction processing are set.
  • RF frequency high frequency power supply frequency
  • chamber processing chamber
  • the monochromator 53 selectively extracts the wavelength component of the specific emission spectrum, but when the object to be processed contains hydrogen atoms (H), the monochromator 53 uses Select and extract the luminescence spectrum (656.3 nm) of the sample. For example, when a silicon oxide film is etched using a fluorocarbon-based etching gas such as CF, an emission spectrum (219 nm or 4 nm) from the reaction product, C, is used. 83.5 nm, etc.) or extraction of the emission spectrum (260 nm, etc.) from CF which is an intermediate product. It is common to measure, but H If they are included, they selectively detect the H emission spectrum (656.3 nm) instead. This is because H has a shorter luminescence lifetime than C O and C F and the effect of decay of luminescence is smaller than C ⁇ and C F.
  • the emission spectrum of H (656.3 nm) is larger than that in the ultraviolet region (less than 400 nm). This is because the rate of decrease in transmittance is small, and therefore, the rate of decrease in the amount of detected light is small.
  • FIG. 22 shows an example of the state of the decrease in transmittance for each wavelength.
  • 220 indicates the ultraviolet region
  • 221 indicates the visible region (650 nm).
  • the transmittance curve in the ultraviolet region 2 Comparing with the rate curve 2 21, the transmittance in the visible region has a smaller rate of decrease in transmittance with time than the ultraviolet region. Therefore, as the plasma processing time becomes longer, a large difference occurs in the transmittance between the light in the ultraviolet region and the light in the visible region.
  • the Ar emission spectrum used simultaneously with the etching gas is strong, and the emission spectrum of the C0 emission spectrum is strong. Due to the difficulty of separation, the ultraviolet region of 219 nm or 260 nm is used to detect the emission spectrum of C0 or CF. However, in the ultraviolet region, as described above, the amount of light detected is greatly reduced due to the effect of the decrease in the transmittance of the light emission detection window due to the deposit.
  • the emission spectrum of H is relatively insensitive to contamination of the quartz window 30 by the etching deposits. Therefore, if the emission spectrum of H (656.3 nm) is selected, it is possible to reduce the effect of light emission attenuation and the effect of the decrease in transmittance at the light emission detection window due to deposits. As described above, it is possible to detect the emission spectrum of H and determine the state of the plasma processing by detecting the emission spectrum of H in a stable and accurate manner over a long period of time.
  • the application is not limited to the plasma etching apparatus using the method described above, but it is easily conceived that the method can be widely applied to determination of the end point of plasma processing of a processing apparatus using a plasma, monitoring of a plasma processing state, and the like. It is possible to do.
  • the plasma etching apparatus provided with the etching end point detecting means based on the first to seventh embodiments described above is introduced as close to the photolithography as a semiconductor manufacturing line.
  • Figure 23 shows the photolithography process of a semiconductor manufacturing line.
  • a film to be processed such as a silicon oxide film is formed on a semiconductor wafer by the film forming apparatus 301.
  • a resist is applied by a resist coating device 303.
  • Exposure apparatus 304 transfers a desired circuit pattern on a reticle or mask onto the wafer coated with the resist.
  • the exposed semiconductor wafer is developed by a developing device 305 to remove a portion of the resist corresponding to the transferred circuit pattern.
  • the etching apparatus 306 the resist film is used as a mask to remove and process the film to be processed in the portion where the resist has been removed by etching.
  • the emission spectrum of a reaction product or an intermediate product generated during the etching is detected by the method described in the first to eighth embodiments, and the end point of the etching process is determined.
  • the output of the high-frequency power supply of the etching device 303 is stopped.
  • the semiconductor wafer is sent to an asher 307 to remove the resist, and then washed by a washing device 308.
  • the detection accuracy of the etching end point is improved. And the film remaining due to insufficient etching, the under film being displaced by over-etching, and damage can be reduced. This makes it possible to reduce defects caused by etching during the photolithography process, and to manufacture a high-quality semiconductor device.
  • the variation in the film thickness, the variation in the etching rate Alternatively, it becomes possible to detect erroneous setting of the etching conditions, and furthermore, detection of overexposure and underexposure in the exposure / development process and overexposure and underexposure.
  • defects in the film deposition device 301, the etching device 303, the exposure device 304, and the developing device 304 can be found at an early stage.
  • 311, 312, 313, 314 it is possible to take countermeasures at an early stage, thereby preventing the occurrence of defective products and improving the yield. Become.
  • the high frequency power for plasma excitation is set to 400 kHz or 27.12 MHz
  • the high frequency power for ion acceleration is set to 400 kHz or 800 kHz.
  • the present invention is not limited to these frequencies, and the present invention is not limited to these frequencies. If the frequency is in a band in which periodic plasma emission can be observed, other frequencies such as 13.56 MHz may be used.
  • the present invention can be applied to frequencies, and the same effect can be obtained by detecting not only components synchronized with these frequencies but also components that are integral multiples of those components.
  • the two wavelengths are set to 2 19 nm and 260 nm, and these wavelengths are only examples, and the present invention is not limited to these. Any wavelength can be applied as long as it reflects the etching reaction, that is, a wavelength at which a change appears at the end of etching.
  • the force for detecting the end point from the emission signals of the two wavelengths corresponding to the reaction product and the intermediate product is not limited to two wavelengths, but three or more. It is also applicable to the above wavelength. Also, at the end point If a sufficient signal change is detected, only one wavelength may be used. Further, in the above embodiment, signal processing for extracting a component reflecting the etching reaction was performed on both of the emission signals of the two wavelengths, but signal processing was performed on only one of them, and the other was performed on the conventional light emitting signal. It is also possible to apply the DC component detection method.
  • the present invention is also applicable to etching of metals such as aluminum, polysilicon, silicon nitride (Si 3 N 4), and the like. It is.
  • the sampling signal of the rectangular wave function was used as a method for selectively extracting only the component reflecting the etching reaction from the light emission signal.
  • the method is not limited to this. It is also possible to use a sampling signal consisting of a function (impulse train). It is also possible to sample only the amplitude of the modulation component (AC component) of the emission signal after removing the DC component from the emission signal by high-pass filtering or the like.
  • the etching apparatus is a parallel plate plasma etching apparatus.
  • the present invention is not limited to this, and various etching apparatuses such as an ECR etching apparatus or a microwave etching apparatus are used. It is needless to say that the present invention can be applied to a device such as a device.
  • the present invention is not limited to the detection of the end point of the etching process or the plasma emission measurement, and as the plasma process proceeds,
  • the present invention can be applied to the detection of the end point of various plasma processing apparatuses in which the emission spectrum intensity changes, for example, a sputter processing apparatus or a plasma CVD apparatus, or the measurement of plasma emission.
  • the object to be processed is not limited to a semiconductor wafer, but may be applied to various elements and materials that are subjected to plasma processing in a manufacturing process thereof, such as a substrate for a liquid crystal display device and a semiconductor laser element.
  • amplitude components which strongly reflect the etching reaction that is, only the amplitude components which greatly change at the end of etching
  • signals are extracted.
  • film residue due to insufficient etching and displacement of the underlying film due to overetching are reduced. This makes it possible to reduce defects caused by etching during the photolithography process, and has an effect that a high-quality semiconductor element can be manufactured.
  • the end point when etching a small contact hole having a pattern aperture ratio of 0.5% or less, the end point can always be detected with high accuracy without inserting an extra preceding operation during the etching. As a result, the productivity of the etching process can be improved, and the entire production line can be automated.
  • the end point of the plasma processing can be detected stably, so that the plasma processing apparatus can be stably operated for a long time. Becomes possible.
  • the light emission detection optical system as an imaging optical system, it is possible to detect light emission components in a limited area on the wafer, so that the in-plane variation of the film thickness to be processed and the surface of the etching rate can be detected. It is possible to reduce the dullness of the end point detection signal due to internal variations.
  • the present invention it is possible to more accurately determine the end point of the plasma processing, and in particular, it is possible to more accurately detect the end point of the etching processing in the plasma etching apparatus, and to improve the processing accuracy. Suitable for high etching processing.

Abstract

Dans un procédé classique de microminiaturisation des motifs d'un circuit, le changement du signal d'émission au point d'extrémité de la gravure s'affaiblit. Par conséquent, l'incidence du bruit de fond due aux produits de réaction issus de la gravure de la matière de résistance et des éléments à quartz dans la chambre de traitement et du bruit l/f du plasma devient relativement forte, d'où la difficulté de déceler correctement le point d'extrémité par la seule émission de plasma. Selon la présente invention, dans un procédé de traitement au plasma, tel qu'une gravure au plasma, une lumière ayant une longueur d'onde préétablie est détectée à partir des émissions lumineuses d'un plasma en cours d'utilisation pour traiter une tranche à travailler; un élément de signal évoluant avec la progression du traitement au plasma est extrait en cycles préétablis du signal lumineux de la lumière ayant la longueur d'onde préétablie. On peut ainsi détecter avec plus de précision le point d'extrémité du traitement au plasma à partir du changement d'intensité de l'élément de signal extrait.
PCT/JP1999/001675 1998-04-01 1999-03-31 Procede et systeme de detection du point d'extremite d'un traitement au plasma, et de fabrication d'un dispositif a semi-conducteurs par ces moyens WO1999052132A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10/88424 1998-04-01
JP08842498A JP4041579B2 (ja) 1998-04-01 1998-04-01 プラズマ処理の終点検出方法及びそれを用いた半導体デバイスの製造方法
JP10/138778 1998-05-20
JP13877898A JP4042208B2 (ja) 1998-05-20 1998-05-20 プラズマ処理方法及びその装置

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04242920A (ja) * 1991-01-08 1992-08-31 Fujitsu Ltd 半導体装置の製造方法
JPH0529276A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd ドライエツチング方法
JPH0633271A (ja) * 1992-07-15 1994-02-08 Tokyo Electron Ltd 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JPH06338477A (ja) * 1993-05-28 1994-12-06 Oki Electric Ind Co Ltd エッチング終点検出装置
JPH0774152A (ja) * 1993-09-02 1995-03-17 Seiko Epson Corp プラズマ処理装置
JPH09115883A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置、並びに本検出方法及び装置を用いて製造された半導体素子
JPH10199867A (ja) * 1996-12-20 1998-07-31 Texas Instr Inc <Ti> プラズマエッチング方法およびプラズマ放電を分析するためのシステム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04242920A (ja) * 1991-01-08 1992-08-31 Fujitsu Ltd 半導体装置の製造方法
JPH0529276A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd ドライエツチング方法
JPH0633271A (ja) * 1992-07-15 1994-02-08 Tokyo Electron Ltd 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JPH06338477A (ja) * 1993-05-28 1994-12-06 Oki Electric Ind Co Ltd エッチング終点検出装置
JPH0774152A (ja) * 1993-09-02 1995-03-17 Seiko Epson Corp プラズマ処理装置
JPH09115883A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置、並びに本検出方法及び装置を用いて製造された半導体素子
JPH10199867A (ja) * 1996-12-20 1998-07-31 Texas Instr Inc <Ti> プラズマエッチング方法およびプラズマ放電を分析するためのシステム

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