WO1999027620A3 - Monolithisch integriertes laserarray - Google Patents

Monolithisch integriertes laserarray Download PDF

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Publication number
WO1999027620A3
WO1999027620A3 PCT/DE1998/003548 DE9803548W WO9927620A3 WO 1999027620 A3 WO1999027620 A3 WO 1999027620A3 DE 9803548 W DE9803548 W DE 9803548W WO 9927620 A3 WO9927620 A3 WO 9927620A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
lasers
output power
optical
corresponding coupling
Prior art date
Application number
PCT/DE1998/003548
Other languages
English (en)
French (fr)
Other versions
WO1999027620A2 (de
Inventor
Frank Fidorra
Martin Moehrle
Herbert Venghaus
Original Assignee
Hertz Inst Heinrich
Frank Fidorra
Martin Moehrle
Herbert Venghaus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1997154473 external-priority patent/DE19754473C2/de
Application filed by Hertz Inst Heinrich, Frank Fidorra, Martin Moehrle, Herbert Venghaus filed Critical Hertz Inst Heinrich
Publication of WO1999027620A2 publication Critical patent/WO1999027620A2/de
Publication of WO1999027620A3 publication Critical patent/WO1999027620A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

Optische Sender für Multiplexbetrieb benötigen Laserarrays, die auf verschiedenen Werten einer lasercharakteristischen Variablen, beispielsweise der Emissionswellenlänge, arbeiten. Bekannte Arrays erlauben zur Vermeidung von Kreuzbeeinflussungen nur den gleichzeitigen oder gestaffelten Betrieb der Laser. Außerdem verbrauchen die zugehörigen Koppelnetzwerke einen hohen Anteil der optischen Ausgangsleistung. Weiterhin ist bekannt, durch Integration zweier Zusatzlaser drei verschiedene Serien von Lasern vorzusehen, von denen dann nur eine für den optischen Chip konfektioniert wird. Das erfindungsgemäße Laserarray weist unter Beibehaltung dieser Auswahlabstimmung für einen beliebigen Laserbetrieb doppelt so viele Laser (0 ... 9) auf als für die Sendekanäle benötigt werden und verteilt diese durch Paarzuordnung auf die drei Serien (A, B, C) in der Form, daß immer zwischen zwei benutzten Lasern ein unbenutzter Laser angeordnet ist. Durch diese räumliche Distanz werden Kreuzbeeinflussungen weitgehend unterdrückt. Außerdem ist das zugehörige Koppelnetzwerk unter Ausnutzung beider Ausgänge von 3dB-Kopplern gegenüber herkömmlichen Netzwerken mit einer Stufe weniger aufgebaut, so daß die erzielte Ausgangsleistung verdoppelt werden konnte.
PCT/DE1998/003548 1997-11-26 1998-11-26 Monolithisch integriertes laserarray WO1999027620A2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19754473.8 1997-11-26
DE1997154473 DE19754473C2 (de) 1997-11-26 1997-11-26 Monolithisch integriertes Halbleiter-Laserarray
DE19815567.0 1998-03-31
DE1998115567 DE19815567C2 (de) 1997-11-26 1998-03-31 Monolithisch integriertes Halbleiter-Laserarray

Publications (2)

Publication Number Publication Date
WO1999027620A2 WO1999027620A2 (de) 1999-06-03
WO1999027620A3 true WO1999027620A3 (de) 1999-08-12

Family

ID=26042282

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/003548 WO1999027620A2 (de) 1997-11-26 1998-11-26 Monolithisch integriertes laserarray

Country Status (2)

Country Link
DE (1) DE19815567C2 (de)
WO (1) WO1999027620A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202005015673U1 (de) * 2005-10-03 2005-12-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Monolithisch integrierte BH-Laserstruktur als Verstärkerelement mit integrierter Taperung der aktiven Laserschicht

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143571C2 (de) * 1980-11-04 1991-02-28 Canon K.K., Tokio/Tokyo, Jp
EP0590331A2 (de) * 1992-09-01 1994-04-06 Fuji Xerox Co., Ltd. Optisches Kommunikationsnetz
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
EP0732785A1 (de) * 1995-03-17 1996-09-18 Mitsubishi Denki Kabushiki Kaisha Halbleiterlaservorrichtung und Herstellungsverfahren
WO1996030976A1 (de) * 1995-03-31 1996-10-03 HEINRICH-HERTZ-INSTITUT FüR NACHRICHTENTECHNIK BERLIN GMBH Selbstpulsierender mehrsektionslaser
US5570226A (en) * 1991-04-26 1996-10-29 Fuji Xerox Co., Ltd. Optical link amplifier and a wavelength multiplex laser oscillator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143571C2 (de) * 1980-11-04 1991-02-28 Canon K.K., Tokio/Tokyo, Jp
US5570226A (en) * 1991-04-26 1996-10-29 Fuji Xerox Co., Ltd. Optical link amplifier and a wavelength multiplex laser oscillator
EP0590331A2 (de) * 1992-09-01 1994-04-06 Fuji Xerox Co., Ltd. Optisches Kommunikationsnetz
EP0732785A1 (de) * 1995-03-17 1996-09-18 Mitsubishi Denki Kabushiki Kaisha Halbleiterlaservorrichtung und Herstellungsverfahren
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
WO1996030976A1 (de) * 1995-03-31 1996-10-03 HEINRICH-HERTZ-INSTITUT FüR NACHRICHTENTECHNIK BERLIN GMBH Selbstpulsierender mehrsektionslaser

Also Published As

Publication number Publication date
DE19815567A1 (de) 1999-10-14
DE19815567C2 (de) 2000-02-10
WO1999027620A2 (de) 1999-06-03

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