WO1999021033A2 - Element presentant une structure filtrante - Google Patents

Element presentant une structure filtrante Download PDF

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Publication number
WO1999021033A2
WO1999021033A2 PCT/DE1998/003068 DE9803068W WO9921033A2 WO 1999021033 A2 WO1999021033 A2 WO 1999021033A2 DE 9803068 W DE9803068 W DE 9803068W WO 9921033 A2 WO9921033 A2 WO 9921033A2
Authority
WO
WIPO (PCT)
Prior art keywords
structure according
filter structure
filter
openings
layer sequence
Prior art date
Application number
PCT/DE1998/003068
Other languages
German (de)
English (en)
Other versions
WO1999021033A3 (fr
Inventor
Markus THÖNISSEN
Gilles Lerondel
Michael Krüger
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Priority to EP98961024A priority Critical patent/EP1036342A2/fr
Priority to JP2000517296A priority patent/JP2001521177A/ja
Publication of WO1999021033A2 publication Critical patent/WO1999021033A2/fr
Publication of WO1999021033A3 publication Critical patent/WO1999021033A3/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters

Definitions

  • the invention relates to a component having a filter structure according to the preamble of claim 1.
  • FIG. 1 The present invention is explained in more detail with reference to the exemplary embodiment shown in FIG. 1:
  • Filter structure Bl, B2 and B3 has its own filter characteristics. Additional layers ZI and Z2 provided for separating the filter structures are etched between the filters. On the one hand, these layers can be used as an etch stop in the production of etching, and on the other hand as an optical stop for deeper layers. However, the filter structure shown in FIG. 1 can also be formed without such layers ZI and Z2.
  • openings S1 and S2 are provided. These openings S1 and S2 can be obtained by imaging periodic interference figures be formed on the surface of the filter structures due to an illumination-sensitive etching process. It is conceivable here, for example, the opening S1 by imaging two laser beams brought to interference on the sample surface with periodicity P1 of the interference, and the opening S2 by imaging two laser beams brought to interference on the sample surface with periodicity P2 of the interference by photodissolution of the porous silicon to build.
  • the openings S1 and S2 can be produced by targeted etching, such as, for example, using reactive ion etching designated as “RIE” at the relevant locations.
  • targeted etching such as, for example, using reactive ion etching designated as “RIE” at the relevant locations.
  • the filter structure according to the invention according to FIG. 1 can be used as a reflection and transmission filter.
  • the filter structure according to the invention is used as a reflection filter, the light to be analyzed strikes the structure shown in FIG. 1 from above and the light is then reflected differently by the different filters. In the surface area R1 of the silicon wafer, the light strikes all three filter structures B1, B2 and B3 in succession.
  • the layer structure in the region R1 can be designed such that selectively only the filter structure B1 has the optical behavior of the structure according to the invention. Due to the etching of the area S1, that is to say the removal of the layers B1 and ZI in this area S1, the incident light is selectively reflected only by the filter structure B2. In a comparable manner, the reflection in the area S2 takes place only from the layer structure B3.
  • the formation of one or more such intermediate layers ZI or Z2 can be omitted if a reflection characteristic of the component containing such filter structures according to the invention the total filtering effect is desired, which can be achieved by means of a plurality of filter structures located one above the other.
  • the filter structure according to the invention according to FIG. 1 can also be used as a transmission filter.
  • a layer sequence forming a p / n transition is advantageously to be provided on the side of the filter structure according to the invention facing away from the incidence of light.
  • Such a color detector can be realized according to the invention.
  • the light arriving at the detector is composed of parts that are transmitted through the individual filters.
  • additional filter layers can be added. The signals received at the individual filter positions can thus be determined and evaluated by suitable subtraction of the electrical signals obtained.
  • a filter system for maximum reflection at 24,000 cm -1 was implemented in filter 1.
  • the etching parameters required for this were 30 mA / cm 2 and 120 mA / cra 2 for the individual layers contained therein, the etching times were 2.003 s and 0.797 s.
  • the filter underneath was etched with the same current densities, but with the etching times 2.954 s and 1.148 s and is therefore designed for a maximum reflection at 18,000 cm "1.
  • the filter with the higher wavenumber was deliberately etched over the one with the lower one in order to keep absorption in the UV-near range as low as possible.
  • the left photodiode consists only of a filter for the wavelength at 18,000 cm -1 , the filter above was etched using the RIE.
  • the corresponding photocurrent can be measured between the rear and front contacts.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filtering Materials (AREA)

Abstract

L'invention concerne une structure filtrante (R1, S1, S2) comportant une succession de couches qui comprend plusieurs couches (B1, B2, B3) constituées d'un matériau poreux. Une ou plusieurs autres successions de couches de ce type sont formées à l'intérieur d'un substrat et sont décalées en profondeur par rapport à la première succession de couches. Dans cette structure filtrante, cette ou ces autres successions de couches exercent, de façon appropriée et avantageuse, une fonction filtrante différente de la première succession de couches.
PCT/DE1998/003068 1997-10-20 1998-10-20 Element presentant une structure filtrante WO1999021033A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98961024A EP1036342A2 (fr) 1997-10-20 1998-10-20 Element presentant une structure filtrante
JP2000517296A JP2001521177A (ja) 1997-10-20 1998-10-20 フィルタ構造体を有する部品

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19746089A DE19746089A1 (de) 1997-10-20 1997-10-20 Eine Filterstruktur aufweisendes Bauelement
DE19746089.5 1997-10-20

Publications (2)

Publication Number Publication Date
WO1999021033A2 true WO1999021033A2 (fr) 1999-04-29
WO1999021033A3 WO1999021033A3 (fr) 1999-06-10

Family

ID=7845938

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/003068 WO1999021033A2 (fr) 1997-10-20 1998-10-20 Element presentant une structure filtrante

Country Status (4)

Country Link
EP (1) EP1036342A2 (fr)
JP (1) JP2001521177A (fr)
DE (1) DE19746089A1 (fr)
WO (1) WO1999021033A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000041456A2 (fr) * 1999-01-12 2000-07-20 Forschungszentrum Jülich GmbH Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur
WO2000068983A1 (fr) * 1999-05-07 2000-11-16 Forschungszentrum Jülich GmbH Procede pour la production d'un element avec du materiau rendu poreux

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5424730B2 (ja) * 2009-06-12 2014-02-26 三菱電機株式会社 光学フィルタの製造方法
JP2011002546A (ja) * 2009-06-17 2011-01-06 Mitsubishi Electric Corp 光学フィルタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994029757A1 (fr) * 1993-06-14 1994-12-22 Jülich GmbH Forschungszentrum Composant optique
EP0831341A2 (fr) * 1996-09-21 1998-03-25 Forschungszentrum Jülich Gmbh Réseau optique de diffraction à base de matériaux poreux

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242495B2 (ja) * 1993-07-01 2001-12-25 シャープ株式会社 多層膜フィルタ付き受光素子及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994029757A1 (fr) * 1993-06-14 1994-12-22 Jülich GmbH Forschungszentrum Composant optique
EP0831341A2 (fr) * 1996-09-21 1998-03-25 Forschungszentrum Jülich Gmbh Réseau optique de diffraction à base de matériaux poreux

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THONISSEN M ET AL: "Porous silicon: how a sponge became an application" MOC/GRIN '97. TECHNICAL DIGEST OF THE SIXTH MICROOPTICS CONFERENCE AND THE FOURTEENTH TOPICAL MEETING ON GRADIENT-INDEX OPTICAL SYSTEMS, PROCEEDINGS OF 1997 6TH MICROOPITCS CONF/14TH TOPICAL MEETING ON GRADIENT INDEX OPTICAL SYSTEMS, TOKYO, JAPAN, 7-, Seiten 170-173, XP002098823 1997, Tokyo, Japan, Japan Soc. Appl. Phys, Japan *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000041456A2 (fr) * 1999-01-12 2000-07-20 Forschungszentrum Jülich GmbH Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur
WO2000041456A3 (fr) * 1999-01-12 2000-10-19 Forschungszentrum Juelich Gmbh Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur
WO2000068983A1 (fr) * 1999-05-07 2000-11-16 Forschungszentrum Jülich GmbH Procede pour la production d'un element avec du materiau rendu poreux

Also Published As

Publication number Publication date
JP2001521177A (ja) 2001-11-06
WO1999021033A3 (fr) 1999-06-10
DE19746089A1 (de) 1999-04-29
EP1036342A2 (fr) 2000-09-20

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