WO1999021022A3 - Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper - Google Patents

Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper Download PDF

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Publication number
WO1999021022A3
WO1999021022A3 PCT/DE1998/003026 DE9803026W WO9921022A3 WO 1999021022 A3 WO1999021022 A3 WO 1999021022A3 DE 9803026 W DE9803026 W DE 9803026W WO 9921022 A3 WO9921022 A3 WO 9921022A3
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WO
WIPO (PCT)
Prior art keywords
current
solid body
magnetic
detecting
generated
Prior art date
Application number
PCT/DE1998/003026
Other languages
English (en)
French (fr)
Other versions
WO1999021022A9 (de
WO1999021022A2 (de
Inventor
Georg Schmidt
Original Assignee
Siemens Ag
Georg Schmidt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Georg Schmidt filed Critical Siemens Ag
Priority to EP98959729A priority Critical patent/EP1046045A2/de
Priority to KR1020007004144A priority patent/KR20010031201A/ko
Priority to JP2000517287A priority patent/JP2001521151A/ja
Publication of WO1999021022A2 publication Critical patent/WO1999021022A2/de
Publication of WO1999021022A3 publication Critical patent/WO1999021022A3/de
Publication of WO1999021022A9 publication Critical patent/WO1999021022A9/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0213—Measuring direction or magnitude of magnetic fields or magnetic flux using deviation of charged particles by the magnetic field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Semiconductor Memories (AREA)

Abstract

Es wird ein Verfahren zum Detektieren der Polarisationsrichtung eines durch Injektion aus einem magnetisierten ferromagnetischen Kontaktkörper in einen nicht ferromagnetischen Festkörper erzeugten Stroms spinpolarisierter Elektronen beschrieben. Um den Prozeßaufwand zu vermindern, die Bauelemente mit kleinerer Dimension als bisher herstellen zu können, Analysekontakte oder Magnetfeldsensoren nicht zu benötigen und eine vom Elektronenstrom unabhängige Meßspannung für die Polarisationsrichtung zu erhalten, wird in dem Festkörper ein das jeweils injizierte Elektron abhängig von seinen durch den Spin erzeugten magnetischen Moment ablenkendes inhomogenes Magnetfeld erzeugt, und das durch diese magnetische Ablenkung der Elektronen aufgebaute elektrische Feld wird als Spannung gemessen.
PCT/DE1998/003026 1997-10-18 1998-10-15 Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper WO1999021022A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98959729A EP1046045A2 (de) 1997-10-18 1998-10-15 Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper
KR1020007004144A KR20010031201A (ko) 1997-10-18 1998-10-15 고체 바디내 스핀 분극화된 전자의 흐름을 검출하기 위한방법
JP2000517287A JP2001521151A (ja) 1997-10-18 1998-10-15 固体中のスピン分極した電子の流れを検出する方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19746138A DE19746138A1 (de) 1997-10-18 1997-10-18 Verfahren zum Detektieren eines Stroms spingpolarsierter Elektronen in einem Festkörper
DE19746138.7 1997-10-18

Publications (3)

Publication Number Publication Date
WO1999021022A2 WO1999021022A2 (de) 1999-04-29
WO1999021022A3 true WO1999021022A3 (de) 1999-07-01
WO1999021022A9 WO1999021022A9 (de) 1999-08-05

Family

ID=7845967

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/003026 WO1999021022A2 (de) 1997-10-18 1998-10-15 Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper

Country Status (6)

Country Link
EP (1) EP1046045A2 (de)
JP (1) JP2001521151A (de)
KR (1) KR20010031201A (de)
CN (1) CN1279765A (de)
DE (1) DE19746138A1 (de)
WO (1) WO1999021022A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108878519B (zh) * 2017-05-11 2024-02-20 原子能和替代能源委员会 具有自旋量子位的量子器件

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019697A1 (de) * 2000-04-20 2001-11-15 Sebastian T B Goennenwein Verfahren zur Erzeugung und Charakterisierung von spinpolarisierten Ladungsträgersystemen und darauf beruhende Bauelemente
JP4714918B2 (ja) * 2002-11-29 2011-07-06 独立行政法人科学技術振興機構 スピン注入素子及びスピン注入素子を用いた磁気装置
US7164181B2 (en) 2003-07-30 2007-01-16 Hewlett-Packard Development Company, L.P. Spin injection devices
KR101106639B1 (ko) * 2005-08-08 2012-01-18 삼성전자주식회사 전자제품의 조작패널
CN102376872B (zh) * 2010-08-20 2014-05-28 中国科学院微电子研究所 基于霍尔效应的mos晶体管
CN108151931B (zh) * 2017-12-23 2019-08-09 福州大学 一种估算硒化铋中线偏振光产生的自旋横向力的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663751B1 (fr) * 1990-06-25 1992-09-18 Commissariat Energie Atomique Magnetometre directionnel a resonance.
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ARONOV, A G, PIKUS, G E: "Spin injection into semiconductors", SOV. PHYS. SEMICOND., vol. 10, no. 6, 1976, pages 698 - 700, XP002099171 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108878519B (zh) * 2017-05-11 2024-02-20 原子能和替代能源委员会 具有自旋量子位的量子器件

Also Published As

Publication number Publication date
WO1999021022A9 (de) 1999-08-05
WO1999021022A2 (de) 1999-04-29
EP1046045A2 (de) 2000-10-25
JP2001521151A (ja) 2001-11-06
CN1279765A (zh) 2001-01-10
DE19746138A1 (de) 1999-04-22
KR20010031201A (ko) 2001-04-16

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