WO1999019447A1 - Compositions contenant du borate d'ammonium destinees a l'eliminination des residus de substrats a semi-conducteur - Google Patents

Compositions contenant du borate d'ammonium destinees a l'eliminination des residus de substrats a semi-conducteur Download PDF

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Publication number
WO1999019447A1
WO1999019447A1 PCT/US1998/021807 US9821807W WO9919447A1 WO 1999019447 A1 WO1999019447 A1 WO 1999019447A1 US 9821807 W US9821807 W US 9821807W WO 9919447 A1 WO9919447 A1 WO 9919447A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
wafer
percentage
ammonium
formulation
Prior art date
Application number
PCT/US1998/021807
Other languages
English (en)
Inventor
William A. Wojtczak
George Guan
Original Assignee
Advanced Chemical Systems International, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Chemical Systems International, Inc. filed Critical Advanced Chemical Systems International, Inc.
Priority to US09/529,496 priority Critical patent/US6875733B1/en
Priority to JP2000516001A priority patent/JP2001520267A/ja
Priority to KR1020007004029A priority patent/KR20010031136A/ko
Priority to EP98953564A priority patent/EP1044251A4/fr
Publication of WO1999019447A1 publication Critical patent/WO1999019447A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Definitions

  • the present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations, including an ammonium borate compound, that are utilized to remove residue from wafers following a resist plasma ashing step.
  • the prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a photoresist ashing step.
  • these prior art chemical formulations include strong reagents such as strong acids or strong bases to help remove unwanted inorganic residues.
  • strong reagents can cause unwanted further removal of metal or insulator layers remaining on the wafer and are therefore undesirable in many instances.
  • chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
  • the present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
  • the formulations contain the following general components (percentages are by weight):
  • MEA Monoethanolamine
  • PMDETA Pentamethyldiethylenetriamine
  • TAA Triethanolamine
  • Preferred formulations include:
  • Typical steps in the fabrication of semiconductor wafers involve the creation of metalized layers or insulating layers having patterned resist layers formed thereon. Such a wafer may then be exposed to plasmas (such as halogen based plasmas) to remove exposed metal or insulator. Thereafter, a plasma ashing step is conducted (typically using an oxygen based plasma) in which the remaining resist is removed from the wafer. The result is a patterned metal layer or a patterned insulator layer.
  • plasmas such as halogen based plasmas
  • the residue following the plasma ashing step is predominantly composed of inorganic compounds such as metal halides and metal oxides.
  • the present invention comprises chemical formulations for the removal of inorganic compound residues, where the formulations do not contain strong acids or strong bases of the prior art formulations.
  • the present invention comprises new formulations for stripping wafer residues which originate from high density plasma metal etching followed by plasma ashing.
  • the formulations contain amines and ammonium borates and water or another solvent as primary ingredients.
  • the preferred formulations utilize the following general components (percentages are by weight):
  • Ammonium tetraborate or ammonium pentaborate 9-20% aAxi optional polar organic solvent 0-15%
  • the preferred amines are: Monoethanolamine (MEA)
  • Preferred formulations include:
  • One or more of the preferred amines 35-57%
  • borates as metal-chelating agents in combination with amines are unique features of this invention. These formulations provided good stripping performance and considerably less corrosivity than traditional formulations containing amines and other chelating agents. Borate/amine combinations are not known to have been utilized in commercial strippers.
  • formulations of the present invention are particularly useful on wafers which have been etched with chlorine- or fluorine-containing plasmas followed by oxygen plasma ashing.
  • the residues generated by this type of processing typically contain inorganic materials such as, but not limited to. aluminum oxide and titanium oxide. These residues are often difficult to dissolve completely without causing corrosion of metal and titanium nitride features required for effective device performance.
  • the substrate was silicon oxide.
  • Example 2 A wafer having one micron diameter, three layer vias comprised of a silicon oxide top layer (7000 angstroms thick), a second layer of titanium nitride (1200 angstroms thick), and a bottom layer of aluminum.
  • the substrate was silicon oxide.
  • the present invention formulations were rated for relative stripping effectiveness and corrosivity.
  • the preferred formulations scored best and, in overall performance based on both stripping effectiveness and low corrosivity, are approximately equal.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

La présente invention concerne des formulations d'élimination des résidus de tranche provenant de l'attaque du métal au plasma à base d'halogène suivie de l'ébarbarge au plasma d'oxygène. Les formulations contiennent les constituants généraux suivants (exprimés en pourcentages en poids): une amine organique ou des mélanges d'amines 15-60 %, de l'eau 20-60 %, du tétraborate d'ammonium ou de pentaborate d'ammonium 9-20 %, un solvant organique polaire facultatif 0-15 %.
PCT/US1998/021807 1997-10-14 1998-10-14 Compositions contenant du borate d'ammonium destinees a l'eliminination des residus de substrats a semi-conducteur WO1999019447A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US09/529,496 US6875733B1 (en) 1998-10-14 1998-10-14 Ammonium borate containing compositions for stripping residues from semiconductor substrates
JP2000516001A JP2001520267A (ja) 1997-10-14 1998-10-14 半導体基板からの残留物をストリッピングするためのホウ酸アンモニウム含有組成物
KR1020007004029A KR20010031136A (ko) 1997-10-14 1998-10-14 반도체 기판으로부터 잔류물을 스트리핑하는 조성물을함유하는 붕산 암모늄
EP98953564A EP1044251A4 (fr) 1997-10-14 1998-10-14 Compositions contenant du borate d'ammonium destinees a l'eliminination des residus de substrats a semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6285697P 1997-10-14 1997-10-14
US60/062,856 1997-10-14

Publications (1)

Publication Number Publication Date
WO1999019447A1 true WO1999019447A1 (fr) 1999-04-22

Family

ID=22045285

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/021807 WO1999019447A1 (fr) 1997-10-14 1998-10-14 Compositions contenant du borate d'ammonium destinees a l'eliminination des residus de substrats a semi-conducteur

Country Status (4)

Country Link
EP (1) EP1044251A4 (fr)
JP (1) JP2001520267A (fr)
KR (1) KR20010031136A (fr)
WO (1) WO1999019447A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010113396A (ko) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
JP2002241795A (ja) * 2001-02-21 2002-08-28 Tosoh Corp 洗浄剤
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
WO2014081465A1 (fr) * 2012-11-21 2014-05-30 Dynaloy, Llc Traitement et composition permettant d'enlever des substances contenues dans des substrats
US9069259B2 (en) 2005-10-28 2015-06-30 Dynaloy, Llc Dynamic multi-purpose compositions for the removal of photoresists and method for its use
US9243218B2 (en) 2005-10-28 2016-01-26 Dynaloy, Llc Dynamic multipurpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887497A (en) * 1973-03-15 1975-06-03 George B Ulvild Liquid cleansing composition and method of producing
US4786578A (en) * 1985-01-19 1988-11-22 Merck Patent Gesellschaft Mit Beschrankter Haftung Agent and method for the removal of photoresist and stripper residues from semiconductor substrates
US5128057A (en) * 1989-09-29 1992-07-07 Kyzen Corporation Furfuryl alcohol mixtures for use as cleaning agents
US5482566A (en) * 1990-11-05 1996-01-09 Ekc Technology, Inc. Method for removing etching residue using a hydroxylamine-containing composition
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5783538A (en) * 1994-06-30 1998-07-21 Minnesota Mining And Manufacturing Company Detergent composition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3264405B2 (ja) * 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887497A (en) * 1973-03-15 1975-06-03 George B Ulvild Liquid cleansing composition and method of producing
US4786578A (en) * 1985-01-19 1988-11-22 Merck Patent Gesellschaft Mit Beschrankter Haftung Agent and method for the removal of photoresist and stripper residues from semiconductor substrates
US5128057A (en) * 1989-09-29 1992-07-07 Kyzen Corporation Furfuryl alcohol mixtures for use as cleaning agents
US5482566A (en) * 1990-11-05 1996-01-09 Ekc Technology, Inc. Method for removing etching residue using a hydroxylamine-containing composition
US5783538A (en) * 1994-06-30 1998-07-21 Minnesota Mining And Manufacturing Company Detergent composition
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1044251A4 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
KR20010113396A (ko) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
JP2002241795A (ja) * 2001-02-21 2002-08-28 Tosoh Corp 洗浄剤
US9069259B2 (en) 2005-10-28 2015-06-30 Dynaloy, Llc Dynamic multi-purpose compositions for the removal of photoresists and method for its use
US9243218B2 (en) 2005-10-28 2016-01-26 Dynaloy, Llc Dynamic multipurpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
WO2014081465A1 (fr) * 2012-11-21 2014-05-30 Dynaloy, Llc Traitement et composition permettant d'enlever des substances contenues dans des substrats
CN104024394A (zh) * 2012-11-21 2014-09-03 戴纳洛伊有限责任公司 从衬底去除物质的方法和组合物
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
CN104024394B (zh) * 2012-11-21 2019-07-16 慧盛材料美国有限责任公司 从衬底去除物质的方法和组合物

Also Published As

Publication number Publication date
EP1044251A1 (fr) 2000-10-18
EP1044251A4 (fr) 2002-03-20
JP2001520267A (ja) 2001-10-30
KR20010031136A (ko) 2001-04-16

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