WO1999017346A1 - Procede de formation de structures nanometriques monolithiques - Google Patents

Procede de formation de structures nanometriques monolithiques Download PDF

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Publication number
WO1999017346A1
WO1999017346A1 PCT/RU1998/000288 RU9800288W WO9917346A1 WO 1999017346 A1 WO1999017346 A1 WO 1999017346A1 RU 9800288 W RU9800288 W RU 9800288W WO 9917346 A1 WO9917346 A1 WO 9917346A1
Authority
WO
WIPO (PCT)
Prior art keywords
structures
forming solid
ions
state nano
iοnοv
Prior art date
Application number
PCT/RU1998/000288
Other languages
English (en)
Russian (ru)
Inventor
Valery Konstantinovich Smirnov
Sergey Alexandrovich Krivelevich
Dmitry Stanislavovich Kibalov
Pavel Anatolievich Lepschin
Original Assignee
Zakrytoe Aktsionernoe Obschestvo Tsentr 'analiz Veschestv'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zakrytoe Aktsionernoe Obschestvo Tsentr 'analiz Veschestv' filed Critical Zakrytoe Aktsionernoe Obschestvo Tsentr 'analiz Veschestv'
Priority to AU96545/98A priority Critical patent/AU9654598A/en
Publication of WO1999017346A1 publication Critical patent/WO1999017346A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

Definitions

  • the plasma was turned off by nitrogen to receive a stream of nitrogen ions.
  • We set the energy flow of ions ⁇ 8 keg and the angle of the irradiation of the object of the negative input from the territory of 48 units.
  • the transition of the process and the indicated parameters of the process was 86 nm.
  • a glass plate with a thickness of 606 ⁇ m was installed in the scanning mode ⁇ 660, and the same conditions apply to the processing.
  • the transition of the structure was 18 nm at a depth of 2.6 nm.
  • the indicated examples do not vanish the possible ways of realizing the invention.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Cette invention concerne un procédé de formation de structures nanométriques monolithiques, lequel procédé consiste à soumettre la surface d'un matériau à un flux d'ions selon un angle différent de la normale. La période de la structure ainsi produite est déterminée en choisissant le type des ions et en ajustant les valeurs de température du matériau à traiter, d'énergie des ions et d'angle d'incidence de ces derniers. Afin de générer le flux d'ions, on utilise une substance dont les ions forment un composé diélectrique en présence d'un matériau semi-conducteur.
PCT/RU1998/000288 1997-09-30 1998-08-27 Procede de formation de structures nanometriques monolithiques WO1999017346A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU96545/98A AU9654598A (en) 1997-09-30 1998-08-27 Method for forming solid-state nano-structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU97116234 1997-09-30
RU97116234A RU2141699C1 (ru) 1997-09-30 1997-09-30 Способ формирования твердотельных наноструктур

Publications (1)

Publication Number Publication Date
WO1999017346A1 true WO1999017346A1 (fr) 1999-04-08

Family

ID=20197581

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU1998/000288 WO1999017346A1 (fr) 1997-09-30 1998-08-27 Procede de formation de structures nanometriques monolithiques

Country Status (3)

Country Link
AU (1) AU9654598A (fr)
RU (1) RU2141699C1 (fr)
WO (1) WO1999017346A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1104011A1 (fr) * 1999-11-25 2001-05-30 Sceptre Electronics Limited Procédé de formation de nanostructures en silicium, matrice de fils quantiques et composants basés sur ladite matrice
EP1672415A1 (fr) * 2004-12-17 2006-06-21 Freewire Limited Méthode pour former une structure nano-relief sur la surface d'un film

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2240280C1 (ru) * 2003-10-10 2004-11-20 Ворлд Бизнес Ассошиэйтс Лимитед Способ формирования упорядоченных волнообразных наноструктур (варианты)
RU2569638C2 (ru) 2011-08-05 2015-11-27 Востек, Инк. Светоизлучающий диод с наноструктурированным слоем и способы изготовления и применения
US9057704B2 (en) 2011-12-12 2015-06-16 Wostec, Inc. SERS-sensor with nanostructured surface and methods of making and using
WO2013109157A1 (fr) 2012-01-18 2013-07-25 Wostec, Inc. Agencements à caractéristiques pyramidales ayant au moins une surface nanostructurée et leurs procédés de fabrication et d'utilisation
US9134250B2 (en) 2012-03-23 2015-09-15 Wostec, Inc. SERS-sensor with nanostructured layer and methods of making and using
US9500789B2 (en) 2013-03-13 2016-11-22 Wostec, Inc. Polarizer based on a nanowire grid
US20170194167A1 (en) 2014-06-26 2017-07-06 Wostec, Inc. Wavelike hard nanomask on a topographic feature and methods of making and using
WO2018093284A1 (fr) 2016-11-18 2018-05-24 Wostec, Inc. Dispositifs de mémoire optique utilisant un polariseur à grille en fil de silicium et procédés de fabrication et d'utilisation
WO2018156042A1 (fr) 2017-02-27 2018-08-30 Wostec, Inc. Polariseur à grille de nanofils sur une surface incurvée et procédés de fabrication et d'utilisation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2454714B2 (de) * 1974-11-19 1978-08-17 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Maskierverfahren zur Herstellung periodischer Strukturen in einem Substrat mittels Ionenimplantation
EP0244140A2 (fr) * 1986-04-21 1987-11-04 Hitachi, Ltd. Dispositif semi-conducteur à structure périodique
EP0317952A2 (fr) * 1987-11-24 1989-05-31 Hitachi, Ltd. Dispositif ayant une structure de super-réseau ainsi que la méthode et l'appareil pour sa fabrication
RU2007783C1 (ru) * 1991-10-02 1994-02-15 Борис Михайлович Овчинников Способ создания наноструктур

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2454714B2 (de) * 1974-11-19 1978-08-17 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Maskierverfahren zur Herstellung periodischer Strukturen in einem Substrat mittels Ionenimplantation
EP0244140A2 (fr) * 1986-04-21 1987-11-04 Hitachi, Ltd. Dispositif semi-conducteur à structure périodique
EP0317952A2 (fr) * 1987-11-24 1989-05-31 Hitachi, Ltd. Dispositif ayant une structure de super-réseau ainsi que la méthode et l'appareil pour sa fabrication
RU2007783C1 (ru) * 1991-10-02 1994-02-15 Борис Михайлович Овчинников Способ создания наноструктур

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
R. MARK BRADLEY et al., "Theory of Ripple Topography Induced by Ion Bombardment", J. VAC. SCI. TECHNOL. A., July/August 1988, Vol. 6, No. 4, pages 2390-2395. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1104011A1 (fr) * 1999-11-25 2001-05-30 Sceptre Electronics Limited Procédé de formation de nanostructures en silicium, matrice de fils quantiques et composants basés sur ladite matrice
WO2001039259A1 (fr) * 1999-11-25 2001-05-31 Sceptre Electronics Limited Procedes de formation d'une nanostructure en silicium, reseau de fils quantiques en silicium et dispositif a base de ce dernier
US6274007B1 (en) 1999-11-25 2001-08-14 Sceptre Electronics Limited Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
EP1672415A1 (fr) * 2004-12-17 2006-06-21 Freewire Limited Méthode pour former une structure nano-relief sur la surface d'un film

Also Published As

Publication number Publication date
AU9654598A (en) 1999-04-23
RU2141699C1 (ru) 1999-11-20

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