WO1998057374A1 - Convertisseur et son utilisation - Google Patents

Convertisseur et son utilisation Download PDF

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Publication number
WO1998057374A1
WO1998057374A1 PCT/DE1998/001475 DE9801475W WO9857374A1 WO 1998057374 A1 WO1998057374 A1 WO 1998057374A1 DE 9801475 W DE9801475 W DE 9801475W WO 9857374 A1 WO9857374 A1 WO 9857374A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching element
converter
diode
active switching
axis
Prior art date
Application number
PCT/DE1998/001475
Other languages
German (de)
English (en)
Inventor
Eric Baudelot
Manfred Bruckmann
Heinz Mitlehner
Dietrich Stephani
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to EP98934829A priority Critical patent/EP0992067A1/fr
Publication of WO1998057374A1 publication Critical patent/WO1998057374A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Definitions

  • the invention relates to a converter comprising at least one semiconductor component with a substrate on which an active switching element is built.
  • the invention also relates to the use of such a converter.
  • the invention relates in particular to a converter comprising a semiconductor component, the substrate of which consists of a polytype of silicon carbide.
  • MOSFET insulated gate electrode
  • IGBT insulated gate electrode
  • thyristor thyristor separated from the associated substrate by an oxide layer
  • a converter is an electronic circuit which converts alternating current with a predetermined frequency into alternating current with a different frequency, which is accomplished with appropriately switched semiconductor components.
  • a converter can in principle be constructed with practically all known active semiconductor components, with active semiconductor components such as MOSFETs recently enjoying particular interest.
  • Any semiconductor component that can be used in this regard can be said to generally NEN brings specific advantages and specific disadvantages, under consideration of which the relevant specialist has to choose the semiconductor component to be used in the individual case.
  • a converter in each case consists of a rectifier, which first converts an alternating current to be supplied from a public network into direct current, and an inverter, which converts the direct current again into one
  • Alternating current with the desired and optionally adjustable frequency can be a two-phase or three-phase alternating current, depending on the desired performance.
  • the term “power converter” comprising both rectifiers and inverters, semiconductor components are required which block, regardless of the polarity of an electrical voltage present via corresponding electrodes, that is to say can prevent a flow of electrical current due to the voltage.
  • the used MOSFETs are not suitable as such symmetrically blocking semiconductor components. This is because they can only block when the electrical ones above the corresponding electrodes
  • Symmetrically blocking components are available on the market in the form of symmetrically blocking classic thyristors and switch-off thyristors. However, these are generally characterized in that they have high storage charge effects which slow down their switching processes and Do not allow these components to be used if periodic switching operations with frequencies of significantly more than 1 kHz have to be carried out.
  • a converter comprising at least one semiconductor component with a substrate, on which a series circuit, comprising an active switching element, which can be switched to a switchable state by applying a corresponding electrical voltage, and a diode, is constructed.
  • the semiconductor component in the converter according to the invention is characterized by a monolithic structure which comprises an asymmetrically blocking active switching element and a diode.
  • the diode takes over the desired blocking if an electrical voltage applied via corresponding electrodes of the semiconductor component does not have the polarity at which the active switching element is in the switchable state.
  • the semiconductor component is thus a symmetrically blocking switch that can meet the requirements in a wide variety of converter topologies up to very high clock frequencies.
  • the semiconductor component is also characterized by relatively low forward losses and can be used in combination with a further semiconductor component connected in antiparallel for switching alternating current as with a triac, without having the disadvantages of the triac that correspond to the disadvantages of the normal thyristor described.
  • the diode in the semiconductor component is preferably a Schottky diode;
  • the Schottky diode is characterized by both an almost negligible memory effect and thus its suitability for switching operations with very high clock frequencies as well as a comparatively low forward voltage, which results in particularly low losses in the conductive state.
  • the active switching element of the semiconductor component has a symmetrical alignment along an axis, the diode being arranged axially next to the active switching element with respect to the axis.
  • the active switching element is preferably formed from a main surface in the substrate that is approximately perpendicular to the axis, and the diode extends to a counter surface of the substrate that is approximately parallel to the main surface and axially adjacent to the axis with respect to the axis.
  • the active switching element is thus characterized by a more or less "vertical" geometry oriented parallel or axially symmetrical to the axis. This is particularly the case in connection with MOSFETs of the so-called “vertical” type, which are particularly advantageous when used as Mark switch.
  • An alternative preferred embodiment of the invention is characterized in that the active switching element has a symmetrical alignment along an axis, and that the diode is arranged laterally next to the active switching element with respect to the axis and axially adjacent to the active switching element and the diode with respect to the axis Connection area is connected to the active switching element.
  • the active switching element has a symmetrical alignment along an axis
  • the diode is arranged laterally next to the active switching element with respect to the axis and axially adjacent to the active switching element and the diode with respect to the axis Connection area is connected to the active switching element.
  • An active switching element that is particularly preferred for the semiconductor component is a field effect transistor, in particular such a field effect transistor, which has a channel region oriented approximately perpendicular to an axis and a drift region lying behind the channel region along the axis, behind which the diode lies.
  • a field-effect transistor is particularly suitable for a switching application, even if the switchable state has to be blocked when a comparatively high electrical voltage is present; the entire drift area is available for the blocking function.
  • the field effect transistor can be a customary field effect transistor used for switching purposes with a gate electrode separated from the rest of the substrate by an oxide layer or a pn junction; it is also conceivable and advantageous for various applications to provide a special form of a field effect transistor, for example a field effect transistor designed as a current limiter.
  • junction field-effect transistors each having a gate electrode (JFETs) or bipolar transistors separated from the rest of the substrate by a pn junction.
  • the substrate of the semiconductor component preferably consists of a semiconductor with a breakdown field strength of more than 10 6 V / cm, in particular silicon carbide.
  • the active switching element constructed in this preferred semiconductor can be preceded by a further switching element constructed in silicon, in particular a field effect transistor.
  • This A particularly preferred embodiment allows the advantageous properties of the further active switching element constructed in conventional silicon technology to be combined with the properties of the active switching element constructed in the preferred semiconductor, which are in particular superior in terms of blocking capability.
  • the preferred semiconductor is silicon carbide, since the silicon carbide technology is still comparatively difficult due to the special properties of the silicon carbide, which, due to its extremely high breakdown field strength and its extremely high thermal conductivity and thermal stability, are nevertheless suitable for high-performance electronics - tronics is ideal.
  • the semiconductor component is preferably arranged as a switch in the converter.
  • the use of the converter according to the invention for the periodically repeated switching of an electrical voltage with a switching frequency that is above 1 kHz is specified.
  • An embodiment of the use results when the electrical voltage is an AC voltage.
  • the polarity of the electrical voltage across the semiconductor component of the converter changes constantly, the active switching element being alternately present in its switchable state and in its conductive state.
  • the active switching element can switch the electrical voltage according to a corresponding specification
  • the semiconductor component is permanently and reliably blocked by the diode.
  • FIG. 1 shows a first embodiment of a semiconductor component for the converter
  • FIG. 2 shows a second embodiment of the semiconductor component for the converter
  • FIG. 3 shows a semiconductor component which is particularly suitable for interconnection with a conventional silicon MOSFET in the converter
  • Figure 4 is a circuit diagram of such an interconnection
  • Figure 5 is a schematic of a converter in which the converter is used.
  • FIG. 1 shows an embodiment of the semiconductor component, built up on a substrate 1 and consisting of the semiconductor silicon carbide.
  • the semiconductor component consists of an active switching element 2, in this case designed as a MOSFET, and a diode 3 connected in series therewith.
  • the active switching element 2 and the diode 3 lie with respect to an axis 4, which is oriented essentially perpendicular to the substrate 1 , axially side by side.
  • the active switching element 2 is constructed starting from a main surface 5 and is essentially rotationally symmetrical to the axis 4; it is a "vertical type" MOSFET.
  • the active switching element 2 has an annular source electrode 6, formed as a region with n-doping in an annular, p-doped well, and one through an oxide layer or the like of isolated from the actual semiconductor component, disc-shaped gate electrode 7. Below the gate electrode 7 and starting from the source electrode 6, a channel region 8 is formed, the electrical conductivity of which can be varied within wide limits by applying a corresponding voltage between the source electrode 6 and the gate electrode 7 is; a current flow through the channel region 8 can be substantially completely prevented, corresponding to a "blocking state" of the active switching element 2, or a current flow can be permitted largely unhindered, corresponding to a "conductive state" of the active switching element 2.
  • the resulting switching characteristic of the active switching element 2 requires that the electrical voltage across the active switching element 2 has a certain polarity; then the active switching element 2 can be regarded as in a "switchable state". If the voltage present does not have this polarity, it can be assumed that the active switching element 2 always allows a current to flow at a certain level, depending on its specific properties and It cannot therefore serve as a barrier to undesired current flow, so it is in a "conductive state".
  • drift area 9 In the channel area 8 there is always a current flow essentially perpendicular to the axis 4; The direction of the current flow changes near the axis 4 and becomes essentially parallel to the axis 4.
  • This area of the active switching element 2 is usually referred to as “drift area” 9.
  • the drift area 9 ends at a special “gate electrode” ";
  • a diode 3 namely a Schottky diode 3 is connected to the drift region 9.
  • the drift region 9 extends into the substrate 1 and beyond.
  • a cathode layer 11, which serves as the cathode of the diode 3, has grown on the substrate 1 on a side facing away from the active switching element 2.
  • An anode metallization 12 is provided, which forms the Schottky diode 3 with the cathode layer 11. This is a unipolar component and as such is free of memory effects that can occur on a bipolar component such as a pn diode.
  • the metal of the anode metallization 12 is suitably selected.
  • the diode 3 has a lateral boundary 13 in the form of an annular, p-doped region. The diode 3 is thus clearly defined.
  • the component according to FIG. 1 is continuously vertically oriented with respect to the axis 4 and is therefore particularly compact, which is of great importance in view of the technological difficulties in handling silicon carbide.
  • a consistent vertical orientation is by no means mandatory in the present context.
  • FIG. 2 shows another embodiment of the semiconductor component, an active switching element 2 and a diode 3 again being combined on a single substrate 1.
  • the active switching element 2 is in turn designed as a MOSFET and, in terms of its structure and function, corresponds to that of the MOSFET according to FIG.
  • the diode 3 of the semiconductor component according to FIG. 2 also corresponds as such to the diode 3 of the semiconductor component according to FIG. 1, so that the corresponding explanations for the diode 3 according to FIG. 1 also apply to the diode 3 in FIG.
  • the configuration of the diode 3 as a Schottky diode is by no means mandatory; Depending on the application, it may be appropriate to provide a bipolar diode instead of a Schottky diode. Referring to FIG. 3, such a bipolar diode only required see a p-doped additional layer between the anode metallization 12 and the n-doped cathode layer 11. For the sake of clarity, a graphic representation of this simple modification has been left out.
  • the semiconductor component according to FIG. 2 is not designed to be continuously axially symmetrical with respect to the axis 4, but rather the active switching element 2, which is designed as a MOSFET of the vertical type and axially symmetrically with respect to the axis 4, and the diode 3 are located laterally with respect to the axis 4 side by side.
  • the active switching element 2 and the diode 3 are located on the same side of the substrate 1.
  • a special connection region 14 is provided for connecting the active switching element 2 to the diode 3, in this case formed in the substrate 1 itself. This connection region 14 electrical current can flow between the active switching element 2 and the diode 3. It is not excluded that the connection area 14 may be made by means of a corresponding metallization.
  • insulation 15 m in the form of a p-doped region is provided in the arrangement.
  • FIG. 3 shows a further embodiment of the semiconductor component with an active switching element 2 designed as a junction field effect transistor (JFET) and a Schottky diode 3.
  • the active switching element 2 has a multiplicity of source electrodes 6, identified by a common one Connection, and likewise a plurality of gate electrodes 7, also identified on a common connection.
  • the gate electrodes 7 are formed as p-doped zones in an n-doped environment and are therefore only isolated by pn junctions. Electric current flows through the source electrodes 6 through channels that are between the gate Electrodes 7 are too.
  • the relevant electrical properties of these channels can be changed by changing an electrical voltage which is applied between the gate electrodes 7 and the source electrodes 6; if the voltage is close to zero, each channel has a maximum size and if the active switching element is correspondingly highly conductive, if the voltage is such that the gate electrodes 7 have a sufficiently high negative potential with respect to the source electrodes 6, then the channels are completely cut off and the active switching element 2 locks.
  • the diode 3 is arranged on a side of the substrate 1 opposite the active switching element 2, again configured as a Schottky diode as explained above.
  • the semiconductor component according to FIG. 3 likewise consists of silicon carbide, a semiconductor which has high expectations for use in high-voltage,
  • FIG. 4 shows how the semiconductor component according to FIG. 3 can be combined in combination with a further switching element 16, which can be manufactured in a conventional manner from silicon.
  • the mode of operation of the circuit shown in FIG. 4 is immediately apparent to the average specialist who is experienced in this field and requires no further explanation; the circuit offers an advantageous combination of the switching properties of the switching element 16 produced in the context of a sophisticated technology in silicon technology with the comparable blocking capability and thermal stability of the switching element 2 realized in silicon carbide and the diode also realized in silicon carbide 3rd
  • FIG. 5 finally shows an application for an active switching element referred to in the present context 2, namely a converter 17.
  • a converter 17 contains two converters 18 and 19, namely a rectifier 18 which first converts alternating current, which is obtained from a public network, into direct current, and then an inverter 19, which converts the DC is converted into AC.
  • the number of phases and the frequency are largely freely selectable and can be set by appropriate design and control of the inverter 19 from a corresponding control circuit 20.
  • Such a converter 17 can be used to great advantage for supplying an electric motor, since it allows the AC power supplied to be adapted to specific requirements of the electric motor.
  • an active switching element 2 in the inverter 19 will be subjected to a more or less oscillating electrical voltage. It is therefore generally necessary for the active switching element 2 to have defined line properties with respect to an electrical voltage lying above it for every possible polarity of this voltage. For this reason, the active switching element 2 is supplemented by a diode, as explained above. For the sake of clarity, this diode is not shown in FIG. 5.
  • a plurality of active switching elements 2 are provided in a converter 19, and therefore the converter 19 is also intended to contain a plurality of semiconductor components here, as explained above.
  • the active switching elements 2 of these semiconductor components form a set of all active switching elements 2 of the converter 19, the circuit of which thus has an optimum symmetry.
  • the power converter according to the invention comprises a semiconductor component with a series connection of an asymmetrical blocking active switching element and a diode has a monolithic structure on a single substrate.
  • the diode assumes a desired blocking if an electrical voltage applied via corresponding electrodes of the semiconductor component does not have the polarity at which the active switching element is in a switchable state.
  • the semiconductor component according to the invention thus forms a symmetrically blocking switch which can meet the relevant requirements in a wide variety of converter topologies, and this up to very high clock frequencies.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un convertisseur (19) comportant au moins un composant semi-conducteur pourvu d'un substrat (1) sur lequel est réalisé un montage en série (2, 3) comprenant un élément de commutation actif (2) pouvant être mis dans un état commutable ou un état conducteur par application d'une tension électrique correspondante, et une diode (3), ainsi que l'utilisation d'un tel convertisseur (19). L'élément semi-conducteur est constitué de préférence d'un semi-conducteur à grande intensité de champs de claquage, notamment du carbure de silicium.
PCT/DE1998/001475 1997-06-09 1998-05-29 Convertisseur et son utilisation WO1998057374A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98934829A EP0992067A1 (fr) 1997-06-09 1998-05-29 Convertisseur et son utilisation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19724269.3 1997-06-09
DE19724269 1997-06-09

Publications (1)

Publication Number Publication Date
WO1998057374A1 true WO1998057374A1 (fr) 1998-12-17

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Family Applications (1)

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PCT/DE1998/001475 WO1998057374A1 (fr) 1997-06-09 1998-05-29 Convertisseur et son utilisation

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EP (1) EP0992067A1 (fr)
WO (1) WO1998057374A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1779435A2 (fr) * 2004-07-08 2007-05-02 Semisouth Laboratories, Inc. Transistor a effet de champ monolithique a jonction verticale et diode de schottky en carbure de silicium et procede de fabrication associe
EP3182463A1 (fr) * 2015-12-17 2017-06-21 ABB Technology AG Dispositif à semi-conducteur de puissance à blocage inverse
JP2017130597A (ja) * 2016-01-22 2017-07-27 三菱電機株式会社 炭化珪素半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB995773A (en) * 1961-09-08 1965-06-23 Bendix Corp Semi-conductor devices
JPS60113470A (ja) * 1983-11-24 1985-06-19 Hitachi Ltd 縦形電界効果トランジスタ
EP0213608A2 (fr) * 1985-08-30 1987-03-11 Hitachi, Ltd. Dispositif de commutation à semiconducteurs
WO1995024055A1 (fr) * 1994-03-04 1995-09-08 Siemens Aktiengesellschaft Structure mis a base de carbure de silicium a resistance elevee au verrouillage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB995773A (en) * 1961-09-08 1965-06-23 Bendix Corp Semi-conductor devices
JPS60113470A (ja) * 1983-11-24 1985-06-19 Hitachi Ltd 縦形電界効果トランジスタ
EP0213608A2 (fr) * 1985-08-30 1987-03-11 Hitachi, Ltd. Dispositif de commutation à semiconducteurs
WO1995024055A1 (fr) * 1994-03-04 1995-09-08 Siemens Aktiengesellschaft Structure mis a base de carbure de silicium a resistance elevee au verrouillage

Non-Patent Citations (3)

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Title
BALIGA B J: "MOS controlled bipolar devices", ELECTRO '83. ELECTRONICS SHOW AND CONVENTION, NEW YORK, NY, USA, 19-21 APRIL 1983, 1983, EL SEGUNDO, CA, USA, ELECTRON. COMVENTIONS, USA, PAGE(S) 7/1/1 - 8, XP002082473 *
NAOTO FUJISHIMA: "N-CH IGBT WITH HIGH REVERSE BLOCKING CAPABILITY FOR MULTIPOINT DIFFERENTIAL LINE DRIVERS", 22 April 1991, PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S, BALTIMORE, APRIL 22 - 24, 1991, NR. SYMP. 3, PAGE(S) 70 - 75, AYMAN SHIBIB;JAYANT BALIGA, XP000218975 *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 266 (E - 352) 23 October 1985 (1985-10-23) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1779435A2 (fr) * 2004-07-08 2007-05-02 Semisouth Laboratories, Inc. Transistor a effet de champ monolithique a jonction verticale et diode de schottky en carbure de silicium et procede de fabrication associe
EP1779435A4 (fr) * 2004-07-08 2007-10-24 Semisouth Lab Inc Transistor a effet de champ monolithique a jonction verticale et diode de schottky en carbure de silicium et procede de fabrication associe
US7416929B2 (en) 2004-07-08 2008-08-26 Semisouth Laboratories, Inc. Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
EP3182463A1 (fr) * 2015-12-17 2017-06-21 ABB Technology AG Dispositif à semi-conducteur de puissance à blocage inverse
JP2017130597A (ja) * 2016-01-22 2017-07-27 三菱電機株式会社 炭化珪素半導体装置

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