WO1998054375A1 - Vacuum deposition system including mobile source - Google Patents

Vacuum deposition system including mobile source Download PDF

Info

Publication number
WO1998054375A1
WO1998054375A1 PCT/AU1998/000390 AU9800390W WO9854375A1 WO 1998054375 A1 WO1998054375 A1 WO 1998054375A1 AU 9800390 W AU9800390 W AU 9800390W WO 9854375 A1 WO9854375 A1 WO 9854375A1
Authority
WO
WIPO (PCT)
Prior art keywords
vacuum
vacuum chamber
article
deposition system
shield
Prior art date
Application number
PCT/AU1998/000390
Other languages
French (fr)
Inventor
Steven Butler
Original Assignee
Lintek Pty. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintek Pty. Ltd. filed Critical Lintek Pty. Ltd.
Priority to AU75139/98A priority Critical patent/AU7513998A/en
Publication of WO1998054375A1 publication Critical patent/WO1998054375A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition

Definitions

  • This invention relates to a vacuum deposition system including a mobile source.
  • vacuum deposition is given a broad meaning and includes all processes in which an article is coated with a material under vacuum conditions and includes, for example, vapour deposition, sputtering and electron beam evaporation.
  • the invention has particular but not exclusive application to high vacuum vapour deposition systems for coating panels of circuit boards with electrically conductive material such as copper.
  • Circuit boards often include blind or through holes which extend perpendicularly to the major surface of the circuit board. Difficulties exist in depositing conductive material into the bores of the blind holes and through holes, particularly where the hole has a relatively small diameter and/or large depth. This is due to the fact that the material must be travelling at a particular angle of incidence relative to the board in order to enter the hole and impinge on the bore. Thus, it will be readily understood that only a small percentage of the total material satisfies this requirement and enters the hole.
  • the invention resides in a vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material; vacuum generating means for generating a vacuum within the vacuum chamber; a material source located within the vacuum chamber for coating the article; transportation means for transporting the material source within the vacuum chamber, wherein the material source is omni-directional and includes a shield so that only a selected beam of material impinges on the article and wherein the article is swept by the beam of material.
  • the shield is made out of said material to facilitate recovery of said material which impinges on the shield.
  • the article is also moved within the vacuum chamber.
  • the article is moved within the vacuum chamber in a first direction and the material source is transported in a second direction which is generally orthogonal to the first direction.
  • the invention resides in a vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material ; vacuum generating means for generating a vacuum within the vacuum chamber; a mobile shielded material source located within the vacuum chamber .
  • FIG 1 is a schematic plan view of a vaccum deposition system with no panel present in the vacuum chamber.
  • FIG 2 is an end sectional view of the vacuum deposition system with a panel present.
  • the drawings illustrate a vacuum chamber 9 in which a material source 11 produces vapour for deposition on a panel 3 having holes 4 therein which are to be plated.
  • Material source 11 is located in a shield 2 in a manner subsequently to be described. Material source 11 and shield 2 move in the direction illustrated by the arrow in FIG 1 and panel 3 moves transverse to this direction.
  • Panel 3 is gripped by panel handling grippers 1 and moves continuously or incrementally toward the rotating position 12 and source 11 moves back and forward across panel 3 at a speed and distance which is conducive to optimum coverage of the first side of the panel.
  • panel 3 When panel 3 reaches the rotating position 12 it is released by the panel handling grippers 1 and it is rotated 180 degrees by motion through vacuum shaft seal 13.
  • the panel is then moved back to a load lock gate as the second side is coated in the same way as the first . At this point emission from the source may be reduced or stopped until the next panel enters through the load lock.
  • vacuum chamber 9 has an evacuation port 7, a plating material source 11 and a shield 2 surrounding source 11.
  • Shield 2 is shaped to allow only a limited amount of atoms or ions from source 11 to reach substrate 3, and to capture all other plating materials for recovery or re-use.
  • the shield 2 may be made of the same material as the plating material and may be removed with the captured waste at the end of the plating run and be replaced with a new shield or may be made of a different material from which the waste material may be recovered by physical or chemical means.
  • the shield 2 may be allowed to reach a temperature as imparted by the source or may be cooled by fluid cooling, heat sinking or other means well known to operators experienced in the art of heat exchange .
  • the shield 2 is preferably moved within the borders of the substrate so that virtually no plating material escapes into the chamber, although if it is required to have an even thickness of plating to the edge of the border the shield and source may be moved beyond the border.
  • a cover shield 5 captures plating material which escapes in such circumstances.
  • shield 2 is designed such that only those atoms or ions of the plating material from the source which will deposit on the hole bore to the desired depth in the smallest diameter holes are allowed to escape capture by the shield. This is particularly beneficial when these holes have a small diameter compared to the substrate thickness (high aspect ratio) .
  • the design of shield 2 to facilitate this is effected by adjusting the height of the walls and the width of the opening of the shield until the optimum result in the holes is achieved. Generally when the source and shield are moved closer to the substrate the deposition rate will be faster and waste will be reduced.
  • Cover shield 5 may be used to capture plating material which escapes the substrate border.
  • rotating means invert the panel or alternatively a source or sources are located on opposite sides of the substrate to simultaneously coat the substrate.
  • the substrate can be arranged vertically.
  • the system allows efficient coating of a substrate surface whilst reducing substrate heating and captures the majority of the waste for plating material recovery and or re-use.
  • the system also effectively plates the bore of holes, especially high aspect ratio holes in a substrate, whilst reducing the thickness of the surface deposit and reducing substrate heating. This is particularly advantageous when the substrate is to become a printed circuit where some of the surface plating will subsequently be removed by etching means.

Abstract

A vaccum deposition system in which the material source (11) is mobile and carries with it a directional shield (2) whereby an article (3) being coated is swept by a selected beam of material. The system is space efficient, reduces waste, facilitates recovery of waste and ensures efficient coating of bores.

Description

"VACUUM DEPOSITION SYSTEM INCLUDING MOBILE SOURCE"
Technical Field
This invention relates to a vacuum deposition system including a mobile source.
As used herein, the expression "vacuum deposition" is given a broad meaning and includes all processes in which an article is coated with a material under vacuum conditions and includes, for example, vapour deposition, sputtering and electron beam evaporation.
The invention has particular but not exclusive application to high vacuum vapour deposition systems for coating panels of circuit boards with electrically conductive material such as copper.
Background of Invention
Many methods exist for the vacuum deposition of electrically conductive materials, such as copper, onto circuit boards. Once the material has been deposited on the board, it is necessary to etch away selected areas of the deposited material to thereby define electrically conductive paths on the surface of the circuit board. The etched material is usually recovered and recycled. Known systems for coating panels of circuit boards involve one or more fixed sources which coat articles as the articles are moved about within the vacuum chamber.
Circuit boards often include blind or through holes which extend perpendicularly to the major surface of the circuit board. Difficulties exist in depositing conductive material into the bores of the blind holes and through holes, particularly where the hole has a relatively small diameter and/or large depth. This is due to the fact that the material must be travelling at a particular angle of incidence relative to the board in order to enter the hole and impinge on the bore. Thus, it will be readily understood that only a small percentage of the total material satisfies this requirement and enters the hole.
This problem is sometimes overcome by simply increasing the duration of exposure to the material source. However, this approach has the disadvantage that the remainder of the board is overcoated, and the excess material must then be removed and recovered.
Summary of Invention
In one aspect the invention resides in a vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material; vacuum generating means for generating a vacuum within the vacuum chamber; a material source located within the vacuum chamber for coating the article; transportation means for transporting the material source within the vacuum chamber, wherein the material source is omni-directional and includes a shield so that only a selected beam of material impinges on the article and wherein the article is swept by the beam of material.
In a highly preferred embodiment the shield is made out of said material to facilitate recovery of said material which impinges on the shield. Preferably, the article is also moved within the vacuum chamber. In the preferred embodiment the article is moved within the vacuum chamber in a first direction and the material source is transported in a second direction which is generally orthogonal to the first direction.
In another aspect the invention resides in a vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material ; vacuum generating means for generating a vacuum within the vacuum chamber; a mobile shielded material source located within the vacuum chamber . Description of Drawings
In order that this invention may be more easily understood and put into practical effect, reference will now be made to the accompanying drawings which illustrate a preferred embodiment of the invention, wherein: -
FIG 1 is a schematic plan view of a vaccum deposition system with no panel present in the vacuum chamber; and
FIG 2 is an end sectional view of the vacuum deposition system with a panel present.
Description of Preferred Embodiment of Invention
The drawings illustrate a vacuum chamber 9 in which a material source 11 produces vapour for deposition on a panel 3 having holes 4 therein which are to be plated. Material source 11 is located in a shield 2 in a manner subsequently to be described. Material source 11 and shield 2 move in the direction illustrated by the arrow in FIG 1 and panel 3 moves transverse to this direction. Panel 3 is gripped by panel handling grippers 1 and moves continuously or incrementally toward the rotating position 12 and source 11 moves back and forward across panel 3 at a speed and distance which is conducive to optimum coverage of the first side of the panel. When panel 3 reaches the rotating position 12 it is released by the panel handling grippers 1 and it is rotated 180 degrees by motion through vacuum shaft seal 13. The panel is then moved back to a load lock gate as the second side is coated in the same way as the first . At this point emission from the source may be reduced or stopped until the next panel enters through the load lock.
As can be seen in the drawings vacuum chamber 9 has an evacuation port 7, a plating material source 11 and a shield 2 surrounding source 11. Shield 2 is shaped to allow only a limited amount of atoms or ions from source 11 to reach substrate 3, and to capture all other plating materials for recovery or re-use. The shield 2 may be made of the same material as the plating material and may be removed with the captured waste at the end of the plating run and be replaced with a new shield or may be made of a different material from which the waste material may be recovered by physical or chemical means. The shield 2 may be allowed to reach a temperature as imparted by the source or may be cooled by fluid cooling, heat sinking or other means well known to operators experienced in the art of heat exchange . The shield 2 is preferably moved within the borders of the substrate so that virtually no plating material escapes into the chamber, although if it is required to have an even thickness of plating to the edge of the border the shield and source may be moved beyond the border. A cover shield 5 captures plating material which escapes in such circumstances.
Where the substrate has holes 4 to be plated by plating material, shield 2 is designed such that only those atoms or ions of the plating material from the source which will deposit on the hole bore to the desired depth in the smallest diameter holes are allowed to escape capture by the shield. This is particularly beneficial when these holes have a small diameter compared to the substrate thickness (high aspect ratio) . The design of shield 2 to facilitate this is effected by adjusting the height of the walls and the width of the opening of the shield until the optimum result in the holes is achieved. Generally when the source and shield are moved closer to the substrate the deposition rate will be faster and waste will be reduced.
Where holes are placed near the border of the substrate, the source is moved past the border to ensure that atoms or ions of the plating material sufficiently coat the bore of the holes facing the border. Cover shield 5 may be used to capture plating material which escapes the substrate border.
Where it is required to coat both sides of a substrate with plating material, rotating means invert the panel or alternatively a source or sources are located on opposite sides of the substrate to simultaneously coat the substrate. In this case the substrate can be arranged vertically. The preferred embodiment of the present invention has a number of advantages over the apparatus and methods of known vapour deposition systems.
It avoids the disadvantage of known systems in which a significant proportion of the plating material atoms or ions are deposited not only on the substrate but on the surrounding chamber and internal apparatus . This causes malfunctions and requires difficult cleaning operations. This is particularly wasteful if the deposition material is precious metal. The bore of holes in the substrate is more reliably and fully plated (whether blind or through holes) , particularly when these holes have a high aspect ratio in relation to the substrate thickness, than is the case with known prior art systems in which difficulty is experienced in that by the time sufficient plating material is deposited in the centre bore of the holes, more plating material than desired ends up on the substrate surface.
It reduces the prolonged deposition times of prior art systems which can cause excess substrate heating which may cause damage.
It also reduces both the waste of plating materials and the radiation of excess heat to the chamber and internal apparatus occurring in prior art systems in which additional material plating sources are placed outside of the border of the substrate.
It allows efficient coating of a substrate surface whilst reducing substrate heating and captures the majority of the waste for plating material recovery and or re-use. The system also effectively plates the bore of holes, especially high aspect ratio holes in a substrate, whilst reducing the thickness of the surface deposit and reducing substrate heating. This is particularly advantageous when the substrate is to become a printed circuit where some of the surface plating will subsequently be removed by etching means.
It will of course be realised that whilst the above has been given by way of an illustrative example of this invention, all such and other modifications and variations hereto, as would be apparent to persons skilled in the art, are deemed to fall within the broad scope and ambit of this invention as is herein set forth.

Claims

The Claims defining the Invention are as follows :-
1. A vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material; vacuum generating means for generating a vacuum within the vacuum chamber; a material source located within the vacuum chamber for coating the article; transportation means for transporting the material source within the vacuum chamber, wherein the material source is omni-directional and includes a shield so that only a selected beam of material impinges on the article and wherein the article is swept by the beam of material.
2. A vacuum deposition system as claimed in claim 1, wherein the shield is made out of said material to facilitate recovery of said material which impinges on the shield.
3. A vacuum deposition system as claimed in claim 1, wherein the article is also moved within the vacuum chamber .
4. A vacuum deposition system as claimed in claim 3, wherein the article is moved within the vacuum chamber in a first direction and the material source is transported in a second direction which is generally orthogonal to the first direction.
5. A vacuum deposition system including :- a vacuum chamber adapted to accomodate an article to be coated with a material; vacuum generating means for generating a vacuum within the vacuum chamber; a mobile shielded material source located within the vacuum chamber.
PCT/AU1998/000390 1997-05-30 1998-05-26 Vacuum deposition system including mobile source WO1998054375A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU75139/98A AU7513998A (en) 1997-05-30 1998-05-26 Vacuum deposition system including mobile source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPO7120 1997-05-30
AUPO7120A AUPO712097A0 (en) 1997-05-30 1997-05-30 Vacuum deposition system

Publications (1)

Publication Number Publication Date
WO1998054375A1 true WO1998054375A1 (en) 1998-12-03

Family

ID=3801411

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU1998/000390 WO1998054375A1 (en) 1997-05-30 1998-05-26 Vacuum deposition system including mobile source

Country Status (3)

Country Link
AU (1) AUPO712097A0 (en)
TW (1) TW388198B (en)
WO (1) WO1998054375A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1338673A1 (en) * 2002-02-25 2003-08-27 Semiconductor Energy Laboratory Co., Ltd. Vacuum evaporation system and coating method
EP1113087A3 (en) * 1999-12-27 2003-11-19 Sel Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and method for forming a film
EP1492157A1 (en) * 2003-06-27 2004-12-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
KR100471358B1 (en) * 2002-07-19 2005-03-15 엘지전자 주식회사 Device for depositing electroluminescent layer
JP2005120476A (en) * 2003-10-15 2005-05-12 Samsung Sdi Co Ltd Vertical vapor deposition method for organic electro-luminescence device, apparatus therefor, and vapor deposition source used therefor
KR100518709B1 (en) * 2000-09-28 2005-10-05 산요덴키가부시키가이샤 Method of attaching layer material and forming layer in predetermined pattern on substrate using mask
US7943443B2 (en) 2002-09-20 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light-emitting device
US8110509B2 (en) 2002-05-17 2012-02-07 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light emitting devices
US8815331B2 (en) 2000-05-02 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US9209427B2 (en) 2002-04-15 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
EP0477474A1 (en) * 1990-09-28 1992-04-01 Mitsubishi Jukogyo Kabushiki Kaisha Vacuum vapor deposition apparatus
US5182567A (en) * 1990-10-12 1993-01-26 Custom Metallizing Services, Inc. Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
WO1995011517A1 (en) * 1993-10-18 1995-04-27 Pixel International Metal vapour deposition unit
US5536381A (en) * 1994-06-29 1996-07-16 Samsung Electronics Co., Ltd. Sputtering device
WO1996035822A1 (en) * 1995-05-10 1996-11-14 Centre De Recherches Metallurgiques - Centrum Voor Research In De Metallurgie Device and plant for coating a steel band

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
EP0477474A1 (en) * 1990-09-28 1992-04-01 Mitsubishi Jukogyo Kabushiki Kaisha Vacuum vapor deposition apparatus
US5182567A (en) * 1990-10-12 1993-01-26 Custom Metallizing Services, Inc. Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
WO1995011517A1 (en) * 1993-10-18 1995-04-27 Pixel International Metal vapour deposition unit
US5536381A (en) * 1994-06-29 1996-07-16 Samsung Electronics Co., Ltd. Sputtering device
WO1996035822A1 (en) * 1995-05-10 1996-11-14 Centre De Recherches Metallurgiques - Centrum Voor Research In De Metallurgie Device and plant for coating a steel band

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1113087A3 (en) * 1999-12-27 2003-11-19 Sel Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and method for forming a film
US9559302B2 (en) 1999-12-27 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
US8968823B2 (en) 1999-12-27 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8815331B2 (en) 2000-05-02 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
KR100518709B1 (en) * 2000-09-28 2005-10-05 산요덴키가부시키가이샤 Method of attaching layer material and forming layer in predetermined pattern on substrate using mask
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
US9551063B2 (en) 2002-02-25 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and a fabrication method of a light emitting device
CN100354452C (en) * 2002-02-25 2007-12-12 株式会社半导体能源研究所 System and method for producing luminous device
EP1338673A1 (en) * 2002-02-25 2003-08-27 Semiconductor Energy Laboratory Co., Ltd. Vacuum evaporation system and coating method
EP2444518A1 (en) * 2002-02-25 2012-04-25 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and a fabrication method of a light emitting device
US9209427B2 (en) 2002-04-15 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US8110509B2 (en) 2002-05-17 2012-02-07 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light emitting devices
KR100471358B1 (en) * 2002-07-19 2005-03-15 엘지전자 주식회사 Device for depositing electroluminescent layer
US7943443B2 (en) 2002-09-20 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light-emitting device
US8168483B2 (en) 2002-09-20 2012-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for light emitting device
US8377764B2 (en) 2002-09-20 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for light emitting device
US8609476B2 (en) 2002-09-20 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light emitting device
EP1492157A1 (en) * 2003-06-27 2004-12-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4685404B2 (en) * 2003-10-15 2011-05-18 三星モバイルディスプレイ株式會社 Organic electroluminescent element vertical vapor deposition method, apparatus thereof, and vapor deposition source used in organic electroluminescent element vertical vapor deposition apparatus
JP2005120476A (en) * 2003-10-15 2005-05-12 Samsung Sdi Co Ltd Vertical vapor deposition method for organic electro-luminescence device, apparatus therefor, and vapor deposition source used therefor

Also Published As

Publication number Publication date
AUPO712097A0 (en) 1997-06-26
TW388198B (en) 2000-04-21

Similar Documents

Publication Publication Date Title
JP3231900B2 (en) Film forming equipment
US5538610A (en) Vacuum coating system
WO1998054375A1 (en) Vacuum deposition system including mobile source
US20090020416A1 (en) Sputter coating device and method of depositing a layer on a substrate
JPS63282269A (en) Method for depositing metal coating on body
CA1198085A (en) Rapid rate reactive sputtering of metallic compounds
GB2138449A (en) Method for pure ion plating using magnetic fields
EP1489643A3 (en) Method and apparatus for ionized physical vapor deposition
Mattox Physical vapor deposition (PVD) processes
JPS61170050A (en) Formation of low resistance contact
Pargellis Evaporating and sputtering: Substrate heating dependence on deposition rate
CA1192672A (en) Method of producing positive slope step changes on vacuum deposited layers
JPH03122274A (en) Production of thin film and device thereof
JP2014148736A (en) Thin-substrate treatment apparatus
CN113667949B (en) Magnetron sputtering equipment
KR20130075639A (en) A film forming apparatus and a plate for capturing particles
KR20180008578A (en) Apparatus and method for multi-layer deposition
KR100270460B1 (en) Sputtering apparatus
JPH09190899A (en) Plasma processing method and device for it
JPH0748669A (en) Film forming device
CN110965029B (en) Apparatus for depositing a metal film on the surface of a three-dimensional object
JPH0681145A (en) Magnetron sputtering device
CN212199400U (en) Film coating equipment
KR20060127741A (en) Methods of cleaning the shadow masks in the production of displays and decive for their realization
Darrow et al. Low-cost patterned metallization technique for high density multilayer interconnect applications

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM GW HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

NENP Non-entry into the national phase

Ref country code: CA

NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 1999500012

Format of ref document f/p: F

122 Ep: pct application non-entry in european phase