WO1998002925A1 - Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur - Google Patents
Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur Download PDFInfo
- Publication number
- WO1998002925A1 WO1998002925A1 PCT/DE1997/001458 DE9701458W WO9802925A1 WO 1998002925 A1 WO1998002925 A1 WO 1998002925A1 DE 9701458 W DE9701458 W DE 9701458W WO 9802925 A1 WO9802925 A1 WO 9802925A1
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- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- electrode
- gate electrode
- region
- component according
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000012212 insulator Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000000615 nonconductor Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Definitions
- power MOSFETs do not require any control current in the stationary operating state. Because of their structure, however, power OSFETs contain comparatively large parasitic capacitances that have to be reloaded with every switching operation. Since these capacitances influencing the switching behavior of the MOSFET consist both of metallizations and insulator layers and of the space charge zones formed in the area of the pn junctions, their respective size depends in a nonlinear manner on the voltage applied.
- the feedback capacitance caused by the gate electrode and the insulator of the gate-drain / or the gate-collector overlap surface has a predominantly disadvantageous effect on the switching behavior of the respective component and its circuitry ⁇ Freewheeling branch).
- the invention relates to a MOS-controlled semiconductor component.
- the aim is a structure that ensures good switching behavior of the component without impairing its static properties.
- the component should have a high breakdown strength and should be usable in particular in the field of power electronics.
- a semiconductor component with the features specified in patent claim 1 has these properties.
- the dependent claims relate to refinements and advantageous developments of the semiconductor component according to the invention.
- the invention enables the construction of power semiconductors
- FIG. 2 shows an enlarged section of the symmetry unit according to FIG. 1. 4. Description of the embodiments
- Figures 1 and 2 show a mirror-symmetrical with respect to the axis 2, in the vertical; to the axis 2 oriented plane, for example circular, square or hexagonal cell 1 of a vertical n-channel MOS field-effect transistor.
- the individual transistor cells 1 are connected in parallel.
- the dielectric strength of the structure depends on the dopant concentration and thickness of the Si epitaxial layer 5 deposited on the low-resistance, n + -doped substrate (n-buffer) 4 provided with the drain metallization 3.
- the p + -doped wells 7 of the transistor cells 1 are introduced into this n ⁇ -doped layer 5, each of the wells 7 containing an annular, n * -doped source zone 6.
- An Al metallization 8 serves as the source electrode, which contacts both the annular n + region 6 and the respective p + trough 7.
- the metallization 8 connects adjacent transistor cells to one another in a conductive manner and closes them in parallel.
- the gate electrode 9 made of polycrystalline silicon is arranged between the thin gate oxide (Si0 2 ) 10 and the oxide layer 11 carrying the source metallization 8.
- L gd the gate-drain overlap area and this in turn determines the size of the feedback capacitance
- L d ⁇ p denotes the width of the space charge zone of the p * -n ⁇ junction in the epitaxial layer 5 with the channel formed and the maximum forward current.
- the ring-shaped or frame-shaped electrode 13 ensures a comparatively homogeneous field distribution in the edge region of the gate electrode 9 and thus prevents the electrical field strength in the semiconductor material from reaching the critical ionization and thus triggering electron multiplication, which is the critical value of approximately 10 5 volts / cm.
- the parameter L gd must be adjusted accordingly in order to ensure an optimal transmission and switching characteristic of the component.
- a small length L gd improves the switching shafts in principle, but at the same time worsens the transmission properties.
- the distance L s between the gate 9 and the additional electrode 13 the field distortion in Affected area of the electrode ends and L s should therefore be as small as possible.
- the dopant concentration N A of the edge region 15 is determined by the charge which the region 15 serving as contact contributes to the absorption of the electric field until the entire semiconductor structure breaks through. Its dimensions L A / D A should be chosen so that the space charge zone extending from the p + n junction does not or only insignificantly affects the transmission properties of the transistor cell 1.
- the invention is of course not limited to the exemplary embodiments described above.
- This component differs essentially only from a MOSFET in that the substrate provided with the collector metallization has p-doping, as a result of which an additional, minority charge carrier is injected into the epitaxial layer (n-base) and the source electrode is formed by a Emitter connection is replaced (see for example [1], pages 350 - 353).
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97932757A EP0925610A1 (de) | 1996-07-16 | 1997-07-10 | Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur |
US09/214,931 US6150675A (en) | 1996-07-16 | 1997-07-10 | Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19628656 | 1996-07-16 | ||
DE19628656.5 | 1996-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998002925A1 true WO1998002925A1 (de) | 1998-01-22 |
Family
ID=7799971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1997/001458 WO1998002925A1 (de) | 1996-07-16 | 1997-07-10 | Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur |
Country Status (3)
Country | Link |
---|---|
US (1) | US6150675A (de) |
EP (1) | EP0925610A1 (de) |
WO (1) | WO1998002925A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0997936A1 (de) * | 1998-10-30 | 2000-05-03 | Alstom Holdings | Verfahren zur Herstellung von IGBT-Gateelektroden |
US6690062B2 (en) | 2002-03-19 | 2004-02-10 | Infineon Technologies Ag | Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance |
DE10212144B4 (de) * | 2002-03-19 | 2005-10-06 | Infineon Technologies Ag | Transistoranordnung mit einer Struktur zur elektrischen Kontaktierung von Elektroden einer Trench-Transistorzelle |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2261961B1 (de) * | 1999-03-04 | 2019-07-17 | Infineon Technologies AG | Verfahren zur Herstellung einer vertikalen MOS-Transistoranordnung |
US20030079786A1 (en) * | 2001-10-30 | 2003-05-01 | Diana Michael J. | Modular fluid pressure regulator with bypass |
DE10203164B4 (de) * | 2002-01-28 | 2005-06-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
US7768064B2 (en) * | 2006-01-05 | 2010-08-03 | Fairchild Semiconductor Corporation | Structure and method for improving shielded gate field effect transistors |
US7807576B2 (en) * | 2008-06-20 | 2010-10-05 | Fairchild Semiconductor Corporation | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
US8829624B2 (en) * | 2008-06-30 | 2014-09-09 | Fairchild Semiconductor Corporation | Power device with monolithically integrated RC snubber |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3046749A1 (de) * | 1979-12-10 | 1981-09-10 | Sharp K.K., Osaka | "mos-halbleiterbauelement fuer hohe betriebsspannungen" |
JPS5887874A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 絶縁ゲ−ト形半導体装置 |
EP0635888A1 (de) * | 1993-07-22 | 1995-01-25 | Siliconix Incorporated | Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
JP3092940B2 (ja) * | 1990-02-01 | 2000-09-25 | クウィッグ,フレッド,エル. | 減少させたゲート容量を有するmosfet構成体及びその製造方法 |
DE59009155D1 (de) * | 1990-11-12 | 1995-06-29 | Siemens Ag | Halbleiterbauelement für hohe Sperrspannung. |
JP3417013B2 (ja) * | 1993-10-18 | 2003-06-16 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
-
1997
- 1997-07-10 EP EP97932757A patent/EP0925610A1/de not_active Ceased
- 1997-07-10 US US09/214,931 patent/US6150675A/en not_active Expired - Lifetime
- 1997-07-10 WO PCT/DE1997/001458 patent/WO1998002925A1/de active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3046749A1 (de) * | 1979-12-10 | 1981-09-10 | Sharp K.K., Osaka | "mos-halbleiterbauelement fuer hohe betriebsspannungen" |
JPS5887874A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 絶縁ゲ−ト形半導体装置 |
EP0635888A1 (de) * | 1993-07-22 | 1995-01-25 | Siliconix Incorporated | Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes |
Non-Patent Citations (3)
Title |
---|
COEN R W ET AL: "A high-performance planar power MOSFET", IEEE TRANSACTIONS ON ELECTRON DEVICES, FEB. 1980, USA, VOL. ED27, NR. 2, PAGE(S) 340 - 343, ISSN 0018-9383, XP002042684 * |
PATENT ABSTRACTS OF JAPAN vol. 007, no. 182 (E - 192) 11 August 1983 (1983-08-11) * |
TIHANYI J: "Integrated power devices", INTERNATIONAL ELECTRON DEVICES MEETING. TECHNICAL DIGEST, SAN FRANCISCO, CA, USA, 13-15 DEC. 1982, 1982, NEW YORK, NY, USA, IEEE, USA, PAGE(S) 6 - 10, XP002042685 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0997936A1 (de) * | 1998-10-30 | 2000-05-03 | Alstom Holdings | Verfahren zur Herstellung von IGBT-Gateelektroden |
FR2785448A1 (fr) * | 1998-10-30 | 2000-05-05 | Alstom Technology | Procede de fabrication d'une electrode de commande de grille pour transistor igbt |
US6274451B1 (en) | 1998-10-30 | 2001-08-14 | Alstom Holdings | Method of fabricating a gate-control electrode for an IGBT transistor |
US6690062B2 (en) | 2002-03-19 | 2004-02-10 | Infineon Technologies Ag | Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance |
DE10212144B4 (de) * | 2002-03-19 | 2005-10-06 | Infineon Technologies Ag | Transistoranordnung mit einer Struktur zur elektrischen Kontaktierung von Elektroden einer Trench-Transistorzelle |
DE10212149B4 (de) * | 2002-03-19 | 2007-10-04 | Infineon Technologies Ag | Transistoranordnung mit Schirmelektrode außerhalb eines aktiven Zellenfeldes und reduzierter Gate-Drain-Kapazität |
Also Published As
Publication number | Publication date |
---|---|
US6150675A (en) | 2000-11-21 |
EP0925610A1 (de) | 1999-06-30 |
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