WO1997044812B1 - Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor - Google Patents
Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processorInfo
- Publication number
- WO1997044812B1 WO1997044812B1 PCT/US1997/008610 US9708610W WO9744812B1 WO 1997044812 B1 WO1997044812 B1 WO 1997044812B1 US 9708610 W US9708610 W US 9708610W WO 9744812 B1 WO9744812 B1 WO 9744812B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source
- variable
- values
- match
- attained
- Prior art date
Links
- 210000002381 Plasma Anatomy 0.000 title claims abstract 5
Abstract
An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.
Claims
AMENDED CLAIMS
[received by the International Bureau on 19 November 1997 (19.11.97); original claims 2-12 cancelled; new claims 13-26 added; remaining claim unchanged (3 pages)]
13. The method of claim 1 wherein the best match between the impedances seen looking into and out of output terminals of the r.f. source is determined as a function of the power coupled between the source and a load including the reactive impedance element and the plasma.
14. The method of claim 13 wherein the function is maximum r.f. current flowing to the reactive impedance element.
15. The method of claim 13 wherein the function is based on maximum power delivered to the. load relative to source output power.
16. The method of any of claims 1 or 13-15 wherein the values of the first and second variable reactances are simultaneously changed during step (2).
17. The method of any of claims 1 or 13-16 wherein the values of the first and second variable reactances are sequentially changed during step (1) so the first variable reactance is changed while the second variable reactance is not changed and the second variable reactance is changed while the first variable reactance is not changed.
18. The method of any of claims 1 or 13-16 wherein the values of the first and second variable reactances are simultaneously changed during step (1).
19. The method of any of claims 1 or 13-18 wherein the best match attained during step (1) is a local best match.
20. The method of any of claims 1 or 13-19 wherein the best match attained during step (2) is a local best match.
21. The method of any of claims 1 or 13-17, 19 or 20 wherein step (1) is performed by (a) changing the value of only the first of said variable reactances until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained; (b) then changing only the value of the second of said variable reactances until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained; (c) then changing the value of only the first of said variable reactances until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained; (d) from indications of the values of the first and second variable reactances at the completion of steps (a) and (c), determining the amount the first variable reactance is to change for each unit change in the value of the second variable reactance.
22. The method of any of claims 1 or 13-21 wherein the variations in values of step (5) result in a first straight line trajectory in a plot of the values of the first and second variable reactances, the method further including:
(a') determining if the best possible impedance match at the completion of step (2) meets a minimum criterion;
(b') in response to the determination of step (a') meeting the minimum criterion, maintaining the values of the first and second variable reactances constant;
(c') in response to the determination of step (a') not meeting the minimum criterion, changing the values of
the first and second variable reactances so there is a second straight line trajectory at a right angle to the first trajectory until the best possible match between the impedances seen looking into and out of output terminals of the r.f. source is attained; and
(d') then simultaneously changing the values of the first and second variable reactances along a further straight line trajectory including a point on the first trajectory and a further point determined by the point on the second trajectory where the best possible match between the impedances seen looking into and out of output terminals of the r.f. source is attained.
23. The method of claim 22 wherein the point on the first and further trajectories is an intermediate point along the first trajectory.
24. The method of claim 22 or 23 wherein the further point on the further trajectory is the point on the second trajectory where the best possible match between the impedances seen looking into and out of output terminals of the r.f. source is attained.
25. Apparatus for performing the method of any of claims 1 or 13-24 characterized by a controller for automatically executing the claimed steps.
26. The apparatus of claim 25 wherein the controller includes a computer memory storing signals commanding execution of the claimed steps.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54268797A JP4531133B2 (en) | 1996-05-23 | 1997-05-23 | High frequency field supply method and apparatus using reactive impedance control of matching network |
EP97925671A EP0840941B1 (en) | 1996-05-23 | 1997-05-23 | Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor |
DE69723649T DE69723649T2 (en) | 1996-05-23 | 1997-05-23 | METHOD AND DEVICE FOR CONTROLLING THE REACTIVE IMPEDANCES OF AN ADAPTING CIRCUIT SWITCHED BETWEEN AN RF SOURCE AND AN RF PLASMA REACTOR |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/652,037 | 1996-05-23 | ||
US08/652,037 US5689215A (en) | 1996-05-23 | 1996-05-23 | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997044812A1 WO1997044812A1 (en) | 1997-11-27 |
WO1997044812B1 true WO1997044812B1 (en) | 1997-12-24 |
Family
ID=24615265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/008610 WO1997044812A1 (en) | 1996-05-23 | 1997-05-23 | Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor |
Country Status (7)
Country | Link |
---|---|
US (1) | US5689215A (en) |
EP (1) | EP0840941B1 (en) |
JP (2) | JP4531133B2 (en) |
KR (1) | KR100513614B1 (en) |
DE (1) | DE69723649T2 (en) |
ES (1) | ES2202623T3 (en) |
WO (1) | WO1997044812A1 (en) |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982099A (en) * | 1996-03-29 | 1999-11-09 | Lam Research Corporation | Method of and apparatus for igniting a plasma in an r.f. plasma processor |
DE19644339C1 (en) * | 1996-10-25 | 1998-06-10 | Bosch Gmbh Robert | Device for transforming an antenna impedance |
US6017414A (en) * | 1997-03-31 | 2000-01-25 | Lam Research Corporation | Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers |
US6652717B1 (en) * | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
KR100257155B1 (en) | 1997-06-27 | 2000-05-15 | 김영환 | Optimization of matching network of semiconductor processing device |
US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
US6375810B2 (en) | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
JP2929284B2 (en) * | 1997-09-10 | 1999-08-03 | 株式会社アドテック | Impedance matching and power control system for high frequency plasma processing equipment |
US6023038A (en) * | 1997-09-16 | 2000-02-08 | Applied Materials, Inc. | Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system |
US5929717A (en) * | 1998-01-09 | 1999-07-27 | Lam Research Corporation | Method of and apparatus for minimizing plasma instability in an RF processor |
US6516742B1 (en) * | 1998-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
US6254738B1 (en) | 1998-03-31 | 2001-07-03 | Applied Materials, Inc. | Use of variable impedance having rotating core to control coil sputter distribution |
TW434636B (en) | 1998-07-13 | 2001-05-16 | Applied Komatsu Technology Inc | RF matching network with distributed outputs |
US6313584B1 (en) * | 1998-09-17 | 2001-11-06 | Tokyo Electron Limited | Electrical impedance matching system and method |
US6361645B1 (en) | 1998-10-08 | 2002-03-26 | Lam Research Corporation | Method and device for compensating wafer bias in a plasma processing chamber |
US6259334B1 (en) | 1998-12-22 | 2001-07-10 | Lam Research Corporation | Methods for controlling an RF matching network |
US6188564B1 (en) | 1999-03-31 | 2001-02-13 | Lam Research Corporation | Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber |
US6265831B1 (en) | 1999-03-31 | 2001-07-24 | Lam Research Corporation | Plasma processing method and apparatus with control of rf bias |
US6242360B1 (en) | 1999-06-29 | 2001-06-05 | Lam Research Corporation | Plasma processing system apparatus, and method for delivering RF power to a plasma processing |
US6424232B1 (en) * | 1999-11-30 | 2002-07-23 | Advanced Energy's Voorhees Operations | Method and apparatus for matching a variable load impedance with an RF power generator impedance |
TW492040B (en) | 2000-02-14 | 2002-06-21 | Tokyo Electron Ltd | Device and method for coupling two circuit components which have different impedances |
US6677711B2 (en) | 2001-06-07 | 2004-01-13 | Lam Research Corporation | Plasma processor method and apparatus |
US6933801B2 (en) | 2001-10-26 | 2005-08-23 | Applied Materials, Inc. | Distributed load transmission line matching network |
US20030116447A1 (en) * | 2001-11-16 | 2003-06-26 | Surridge Nigel A. | Electrodes, methods, apparatuses comprising micro-electrode arrays |
US6946847B2 (en) * | 2002-02-08 | 2005-09-20 | Daihen Corporation | Impedance matching device provided with reactance-impedance table |
US20040027209A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Fixed matching network with increased match range capabilities |
US7879185B2 (en) * | 2003-12-18 | 2011-02-01 | Applied Materials, Inc. | Dual frequency RF match |
US7091460B2 (en) * | 2004-03-15 | 2006-08-15 | Dwight Eric Kinzer | In situ processing of hydrocarbon-bearing formations with variable frequency automated capacitive radio frequency dielectric heating |
JP4344886B2 (en) * | 2004-09-06 | 2009-10-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
US20070031609A1 (en) * | 2005-07-29 | 2007-02-08 | Ajay Kumar | Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same |
US7829471B2 (en) * | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
US7375038B2 (en) * | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
US20080061901A1 (en) * | 2006-09-13 | 2008-03-13 | Jack Arthur Gilmore | Apparatus and Method for Switching Between Matching Impedances |
TW200830941A (en) * | 2007-01-15 | 2008-07-16 | Jehara Corp | Plasma generating apparatus |
KR100895689B1 (en) | 2007-11-14 | 2009-04-30 | 주식회사 플라즈마트 | Impedance matching methods and electric apparatus performing the same |
KR100870121B1 (en) * | 2007-04-19 | 2008-11-25 | 주식회사 플라즈마트 | Impedance Matching Methods And Systems Performing The Same |
US8120259B2 (en) * | 2007-04-19 | 2012-02-21 | Plasmart Co., Ltd. | Impedance matching methods and systems performing the same |
JP5606312B2 (en) * | 2007-07-23 | 2014-10-15 | トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | Plasma power supply device |
US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
JP5582823B2 (en) * | 2010-02-26 | 2014-09-03 | 東京エレクトロン株式会社 | Automatic alignment apparatus and plasma processing apparatus |
JP5632626B2 (en) * | 2010-03-04 | 2014-11-26 | 東京エレクトロン株式会社 | Automatic alignment apparatus and plasma processing apparatus |
JP5730521B2 (en) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | Heat treatment equipment |
SI23611A (en) | 2011-01-20 | 2012-07-31 | Institut@@quot@JoĹľef@Stefan@quot | Device for high-frequency excitation of gas plasma |
KR101294380B1 (en) * | 2011-07-28 | 2013-08-08 | 엘지이노텍 주식회사 | Impedance matching apparatus and impedance matching method |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
SG11201402447TA (en) | 2011-11-24 | 2014-06-27 | Lam Res Corp | Plasma processing chamber with flexible symmetric rf return strap |
JP5867701B2 (en) * | 2011-12-15 | 2016-02-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
DE102012200702B3 (en) * | 2012-01-19 | 2013-06-27 | Hüttinger Elektronik Gmbh + Co. Kg | A method of phasing multiple RF power generation units of an RF power supply system and RF power supply system |
JP5713354B2 (en) * | 2012-02-07 | 2015-05-07 | 株式会社日本製鋼所 | Plasma generator |
US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
US9041480B2 (en) * | 2013-03-15 | 2015-05-26 | Mks Instruments, Inc. | Virtual RF sensor |
US9720022B2 (en) | 2015-05-19 | 2017-08-01 | Lam Research Corporation | Systems and methods for providing characteristics of an impedance matching model for use with matching networks |
US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
KR101907375B1 (en) * | 2014-03-24 | 2018-10-12 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | System and method for control of high efficiency generator source impedance |
US10224184B2 (en) | 2014-03-24 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | System and method for control of high efficiency generator source impedance |
US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
JP6877333B2 (en) * | 2014-08-15 | 2021-05-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Compact configurable modular high frequency matching network assembly for plasma processing systems and how to configure the assembly |
US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
US9736920B2 (en) * | 2015-02-06 | 2017-08-15 | Mks Instruments, Inc. | Apparatus and method for plasma ignition with a self-resonating device |
JP6392266B2 (en) | 2016-03-22 | 2018-09-19 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
JP6378234B2 (en) * | 2016-03-22 | 2018-08-22 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
JPWO2018051447A1 (en) * | 2016-09-15 | 2019-06-24 | 株式会社日立国際電気 | Matching device |
US10420505B2 (en) | 2017-07-18 | 2019-09-24 | Forest Devices, Inc. | Electrode array apparatus, neurological condition detection apparatus, and method of using the same |
JP7257918B2 (en) * | 2019-08-29 | 2023-04-14 | 東京エレクトロン株式会社 | Plasma processing system and plasma ignition support method |
CN113098425A (en) * | 2021-03-30 | 2021-07-09 | 徐显坤 | Impedance matching network, adaptive impedance matching device and method thereof |
US11241182B1 (en) | 2021-04-07 | 2022-02-08 | Forest Devices, Inc. | Gel distribution apparatus and method |
USD970019S1 (en) | 2021-04-07 | 2022-11-15 | Forest Devices, Inc. | Gel distribution module |
US11266476B1 (en) | 2021-04-07 | 2022-03-08 | Forest Devices, Inc. | Headgear storage device and method of distribution |
USD1018861S1 (en) | 2021-04-07 | 2024-03-19 | Forest Devices, Inc. | Headgear |
CN117517785B (en) * | 2024-01-08 | 2024-04-23 | 深圳市瀚强科技股份有限公司 | Impedance detection circuit, impedance detection device, and impedance detection method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4375051A (en) * | 1981-02-19 | 1983-02-22 | The Perkin-Elmer Corporation | Automatic impedance matching between source and load |
JPS59221020A (en) * | 1983-05-30 | 1984-12-12 | Ulvac Corp | Impedance matching circuit in device utilizing plasma |
US4629940A (en) * | 1984-03-02 | 1986-12-16 | The Perkin-Elmer Corporation | Plasma emission source |
JPS61139111A (en) * | 1984-12-11 | 1986-06-26 | Nippon Koshuha Kk | Automatic load matching circuit of high frequency sputtering device |
US4965607A (en) * | 1987-04-30 | 1990-10-23 | Br Communications, Inc. | Antenna coupler |
JPH01201244A (en) * | 1988-02-08 | 1989-08-14 | Toshiba Corp | Impedance automatic adjusting device for mri device |
US5225847A (en) * | 1989-01-18 | 1993-07-06 | Antenna Research Associates, Inc. | Automatic antenna tuning system |
US4951009A (en) * | 1989-08-11 | 1990-08-21 | Applied Materials, Inc. | Tuning method and control system for automatic matching network |
JP2950889B2 (en) * | 1990-03-07 | 1999-09-20 | 国際電気株式会社 | High frequency power matching method and apparatus for plasma device |
JP2770573B2 (en) * | 1991-01-18 | 1998-07-02 | 三菱電機株式会社 | Plasma generator |
JP2551449Y2 (en) * | 1991-01-29 | 1997-10-22 | 新電元工業株式会社 | RF generator impedance matching control circuit |
US5195045A (en) * | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
US5187454A (en) * | 1992-01-23 | 1993-02-16 | Applied Materials, Inc. | Electronically tuned matching network using predictor-corrector control system |
JPH0888097A (en) * | 1994-09-16 | 1996-04-02 | Fujitsu Ltd | Matching circuit for plasma device |
-
1996
- 1996-05-23 US US08/652,037 patent/US5689215A/en not_active Expired - Lifetime
-
1997
- 1997-05-23 KR KR10-1998-0700440A patent/KR100513614B1/en not_active IP Right Cessation
- 1997-05-23 JP JP54268797A patent/JP4531133B2/en not_active Expired - Fee Related
- 1997-05-23 ES ES97925671T patent/ES2202623T3/en not_active Expired - Lifetime
- 1997-05-23 WO PCT/US1997/008610 patent/WO1997044812A1/en active IP Right Grant
- 1997-05-23 DE DE69723649T patent/DE69723649T2/en not_active Expired - Lifetime
- 1997-05-23 EP EP97925671A patent/EP0840941B1/en not_active Expired - Lifetime
-
2009
- 2009-04-27 JP JP2009107835A patent/JP4435267B2/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1997044812B1 (en) | Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor | |
US5689215A (en) | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor | |
US5889252A (en) | Method of and apparatus for independently controlling electric parameters of an impedance matching network | |
US5982099A (en) | Method of and apparatus for igniting a plasma in an r.f. plasma processor | |
US5793162A (en) | Apparatus for controlling matching network of a vacuum plasma processor and memory for same | |
US5936481A (en) | System for impedance matching and power control for apparatus for high frequency plasma treatment | |
US5929717A (en) | Method of and apparatus for minimizing plasma instability in an RF processor | |
WO1997024748B1 (en) | Apparatus for controlling matching network of a vacuum plasma processor and memory for same | |
US8847561B2 (en) | Apparatus, system, and method for controlling a matching network based on information characterizing a cable | |
EP0904634B1 (en) | Method and apparatus for matching a variable load impedance with an rf power generator impedance | |
JP2003516691A (en) | Variable load switchable impedance matching system | |
WO2005119731A2 (en) | Vacuum plasma processor including control in response to dc bias voltage | |
CN109412574B (en) | Power transmission method of radio frequency power supply | |
CN108012401A (en) | RF impedance matching process, adaptation and semiconductor processing device | |
US20220139674A1 (en) | Systems and methods combining match networks and frequency tuning | |
JPS61139111A (en) | Automatic load matching circuit of high frequency sputtering device | |
KR100206914B1 (en) | Multi-preset impedance matching apparatus | |
JPH07273680A (en) | Control method for automatic antenna tuner | |
US20230253185A1 (en) | Systems and Methods for Radiofrequency Signal Generator-Based Control of Impedance Matching System | |
JPH0796710B2 (en) | High frequency automatic matching device | |
CN116759284A (en) | Semiconductor process equipment, optimal impedance value acquisition method and sweep frequency matching method | |
CN113241296A (en) | Radio frequency power supply, impedance matching method thereof and semiconductor process equipment | |
JPS61274427A (en) | Automatic matching system | |
JPH02123692A (en) | Induction heating cooker | |
JPH05335670A (en) | Power controlling method for high-frequency discharge circuit of gas laser |