JPS61139111A - Automatic load matching circuit of high frequency sputtering device - Google Patents

Automatic load matching circuit of high frequency sputtering device

Info

Publication number
JPS61139111A
JPS61139111A JP59261611A JP26161184A JPS61139111A JP S61139111 A JPS61139111 A JP S61139111A JP 59261611 A JP59261611 A JP 59261611A JP 26161184 A JP26161184 A JP 26161184A JP S61139111 A JPS61139111 A JP S61139111A
Authority
JP
Japan
Prior art keywords
variable reactance
matching
load
reflected wave
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59261611A
Other languages
Japanese (ja)
Inventor
Kibatsu Shinohara
己抜 篠原
Hisato Umezawa
梅沢 九十
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Koshuha Co Ltd
Original Assignee
Nihon Koshuha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Koshuha Co Ltd filed Critical Nihon Koshuha Co Ltd
Priority to JP59261611A priority Critical patent/JPS61139111A/en
Publication of JPS61139111A publication Critical patent/JPS61139111A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • H03H7/40Automatic matching of load impedance to source impedance

Landscapes

  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

PURPOSE:To facilitate the matching operation and to improve the work efficiency by placing a coupler, which detects the reflected wave voltage from a load, between a high frequency power source and a matching circuit and controlling individual variable reactance elements in accordance with a preliminarily set program and obtaining the point where the reflected power is minimum to perform the matching operation. CONSTITUTION:A matching circuit 3 and a reflected wave component detector 6 are placed between a high frequency power source 1 and a load 2. Only one of driving motors 8 and 9 is rotated to change one of parallel and series variable reactance elements in accordance with the program stored in a ROM10, and the value of the variable reactance element at the time when the output voltage of reflected wave components is minimum is stored in a RAM11. The other driving motor is rotated to change the other variable reactance element, and its value at the time when the reflected wave output voltage is minimum is stored in the RAM11. Both variable reactance elements are changed simultaneously in accordance with the program so that the reflected wave output voltage is always minimum, thus attaining an optimum matching state.

Description

【発明の詳細な説明】 イ、発明の目的 〔産業上の利用分野〕 本発明は、高周波スパッタリング装置またはエツチング
装置等における自動負荷整合回路に係るものである。
DETAILED DESCRIPTION OF THE INVENTION A. Object of the Invention [Field of Industrial Application] The present invention relates to an automatic load matching circuit in a high frequency sputtering device, an etching device, or the like.

〔従来の技術〕[Conventional technology]

従来は負荷からの反射波成分並びに高周波電源からの進
行波成分の両者を検出し1反射波の振幅および位相を求
め、振幅最小で位相がほぼゼロとなるように負荷整合リ
アクタンス素子を自動的に追尾させていた。
Conventionally, both the reflected wave component from the load and the traveling wave component from the high-frequency power supply are detected, the amplitude and phase of one reflected wave are determined, and the load matching reactance element is automatically adjusted so that the phase becomes almost zero at the minimum amplitude. I was being followed.

第2図は従来の自動負荷整合回路(実願昭50−135
799号−実開昭52−50032号)の系統図を示す
もので、高周波電源lの電力は並列可変リアクタンス素
子4、直列可変リアクタンス素子5よりなる整合回路3
を通して、負荷2に加えられている。
Figure 2 shows a conventional automatic load matching circuit
799 - Utility Model Application Publication No. 52-50032), the power of the high frequency power source l is transmitted through a matching circuit 3 consisting of a parallel variable reactance element 4 and a series variable reactance element 5.
is applied to load 2 through.

電源と整合回路の間には反射波成分検出器6と進行波成
分検出器12が置かれ、それぞれの検波出力が合成電子
回路13に導かれ、反射波成分の振幅と位相の情報を持
つ2個の信号を計算し、この電圧を増幅して駆動電動j
a8および9によって、それぞれ並列可変リアクタンス
素子4と直列素子5を変化させ、自動整合を行わせるも
のである。
A reflected wave component detector 6 and a traveling wave component detector 12 are placed between the power source and the matching circuit, and their respective detection outputs are guided to a synthesis electronic circuit 13, which generates a 2 detector with information on the amplitude and phase of the reflected wave component. Calculate the signals and amplify this voltage to drive the electric motor j
Parallel variable reactance element 4 and series element 5 are changed by a8 and a9, respectively, and automatic matching is performed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

高周波スパッタリングやエツチング装置等においては、
使用中における負荷の電気的定数の変化が非常に大きい
ために、自動整合回路の各可変リアクタンス素子の変化
範囲が広くなっている。そのだめに反射検出点における
反射波成分のインピーダンス・スミス図を見ると第3図
の如くなり、可変リアクタンスの変化によるインピーダ
ンス点の軌跡は図中実線で示されたようになって、位相
がゼロの点はAとBの2点となり、従来の方式では、安
定点がこの2点存在することになる。
In high frequency sputtering and etching equipment,
Since the electrical constants of the load vary greatly during use, the range of variation of each variable reactance element of the automatic matching circuit is wide. Instead, if you look at the impedance Smith diagram of the reflected wave component at the reflection detection point, it will look like the one shown in Figure 3. The locus of the impedance point due to the change in variable reactance will be as shown by the solid line in the diagram, and the phase will be zero. There are two points, A and B, and in the conventional method, there are two stable points.

このために、従来は操作の初期において、自動整合回路
を止め、手動によって並列・直列の両可変リアクタンス
素子を調整し、正常整合点のBの近くにまで゛調整した
上で、その後自動操作に切り換えて、追尾させる必要が
あった。従って手間と時間を要す為問題点があった。
For this purpose, conventionally, at the beginning of operation, the automatic matching circuit was stopped, and both the parallel and series variable reactance elements were manually adjusted until they were close to the normal matching point B, and then automatic operation was started. I had to switch and track it. Therefore, there was a problem because it required time and effort.

口1発明の構成 〔問題点を解決するための手段〕 本発明は、高周波電源と負荷回路の間に並列および直列
の整合用可変リアクタンス素子を置く高周波スパッタリ
ング装置において、高周波電源と該整合回路の間に、負
荷よりの反射波電力を検出する結合器をMき、各リアク
タンスの変化に応じた制御信号を検出し、あらかじめ設
定されたプログラムに従ってそれぞれの可変リアクタン
ス素子を制御し反射電力最小の点゛を求め、その値を記
憶回路に記憶し、以後その記憶値に基づく整合操作を行
うことを特徴とする高周波スパッタリング装置等の自動
負荷整合回路である。
1. Structure of the Invention [Means for Solving Problems] The present invention provides a high-frequency sputtering apparatus in which variable reactance elements for matching are placed in parallel and in series between a high-frequency power source and a load circuit. In between, a coupler is installed to detect the power of the reflected wave from the load, a control signal corresponding to the change in each reactance is detected, and each variable reactance element is controlled according to a preset program to find the point at which the reflected power is minimum. This is an automatic load matching circuit for a high frequency sputtering device, etc., which is characterized in that it calculates the value, stores the value in a storage circuit, and thereafter performs matching operations based on the stored value.

また上記の回路において、起動時に反射電力を最小とす
るに必要なリアクタンス値を別の記憶回路に設定記憶さ
せておき、以後その記憶値に基づき整合操作を行うこと
を特徴とする高周波スパッタリング装置等の自動負荷整
合回路である。
Furthermore, in the above circuit, a high-frequency sputtering device or the like is characterized in that a reactance value necessary to minimize reflected power is set and stored in a separate memory circuit at startup, and matching operations are thereafter performed based on the stored value. This is an automatic load matching circuit.

〔作 用〕[For production]

本発明においては、操作のプログラムを内蔵し、起動の
際にはまず一方の可変リアクタンス素子を広範囲に変化
させて、反射波成分最小の点付近に置き、次に他方の可
変リアクタンス素子を変化させて、同様反射波成分最小
の点付近に置き、次に両リアクタンス素子を同時に変化
させて、正常の整合状態を求めることにした。
In the present invention, an operation program is built in, and when starting up, one variable reactance element is first varied over a wide range and placed near the point where the reflected wave component is minimum, and then the other variable reactance element is varied. Therefore, we decided to similarly place it near the point where the reflected wave component is minimum, and then change both reactance elements simultaneously to find a normal matching state.

また請求範囲(2)の発明においては、起動時のリアク
タンス最適値を予め設定して記憶させておき、操作の開
始と共に自動整合追尾動作を行わせ整合収束時間を短縮
する。
Further, in the invention of claim (2), the optimum reactance value at startup is set and stored in advance, and the automatic alignment tracking operation is performed at the start of the operation to shorten the alignment convergence time.

〔実施例〕〔Example〕

第1図は本発明の実施例を示す系統図で、高周波電源1
と負荷2の間に並列可変リアクタンス素子4と直列可変
リアクタンス素子5を含む整合回路3、並びに反射波成
分検出器6を置き、検出器の検波出力電圧を電子回路7
に入れ、A/D変換器によってデジタル化し、ROMI
 O内に記憶しているプログラムに従って、まず、駆動
電動Ia8か9の一方のみを回転させて、並列若しくは
並列可変リアクタンス素子の何れか一方を変化させて、
反射波成分の出力電圧が最小となうん値をRAMIIに
記憶させ、次に他方の駆動電動機を回転させて、他方の
可変リアクタンス素子を変化させて、同様に反射波出力
電圧の最小となった値をIjAMllに記憶し1次に両
可変リアクタンス素子を同時に変化させ、プログラムに
従って、常に反射波出力電圧が最小となるようにして、
最適整合状態に到達させる。以後は負荷の変化に伴なっ
て、最適整合状態の追尾を自動的に実施して行く。
FIG. 1 is a system diagram showing an embodiment of the present invention, in which a high frequency power source 1
A matching circuit 3 including a parallel variable reactance element 4 and a series variable reactance element 5 and a reflected wave component detector 6 are placed between the load 2 and the load 2, and the detected output voltage of the detector is detected by an electronic circuit 7.
digitized by an A/D converter, and ROMI
According to the program stored in O, first, only one of the drive electric motors Ia8 or 9 is rotated to change either the parallel or parallel variable reactance element,
The value at which the output voltage of the reflected wave component is the minimum is stored in RAM II, and then the other drive motor is rotated to change the other variable reactance element, and the reflected wave output voltage is also minimized. Store the value in IjAMll, firstly change both variable reactance elements at the same time, and according to the program, the reflected wave output voltage will always be the minimum,
Achieve optimal alignment. Thereafter, as the load changes, tracking of the optimal matching state will be automatically performed.

高周波スパッタリング等においては前述の如く。負荷の
変化が広範囲であるため、初期に両可変リアクタンス素
子を最適初期値に置くために、若干の時間が必要となる
が、請求範囲(2)の発明においては上記の操作により
両リアクタンス素子が最適初期状態となった時点での両
リアクタンスの値(即ち駆動電動機の回路角に相当)を
、別のRAM2 (14)に記憶させるか、あるいはそ
の付近に設定すべき値を外部よりそのRAM2に設定し
ておき、再起動に際しては整合収束時間を短縮できる。
In the case of high frequency sputtering, etc., as described above. Since the load changes over a wide range, some time is required to initially set both variable reactance elements to their optimum initial values. However, in the invention of claim (2), both reactance elements are Either store the values of both reactances (corresponding to the circuit angle of the drive motor) at the time when the optimum initial state is reached in another RAM2 (14), or store the value that should be set in the vicinity from the outside into that RAM2. By setting this, you can shorten the matching convergence time when restarting.

尚、直列可変リアクタンス素子としては線輪と可変コン
デンサの直列回路を使用し、反射波成分検出器には方向
性結合器を使った。
A series circuit of a coil and a variable capacitor was used as the series variable reactance element, and a directional coupler was used as the reflected wave component detector.

ハ、発明の効果 以上で説明の如く、従来の方式では始めに手動によって
、両可変リアクタンス素子を交互に調整してほぼ整合状
態の近くまで追いかけた後、自動整合回路を動作させて
追尾を行わせるために熟練者でも、約1分問掛っていた
が、本発明によって約10秒間で正常整合状態に置くこ
とができた。また請求範囲の (2)の発明では、整合
状態の記憶量から収束時間の短縮が計られ、2〜3秒と
なった。
C. Effects of the Invention As explained above, in the conventional method, first manually adjust both variable reactance elements alternately to achieve a nearly matching state, and then activate the automatic matching circuit to perform tracking. Even an experienced person would have to spend about a minute to adjust the alignment, but with the present invention, the alignment could be achieved in about 10 seconds. Furthermore, in the invention of claim (2), the convergence time was reduced to 2 to 3 seconds based on the amount of storage of the matching state.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例系統図、第2図は従来の自動整
合回路の系統図、第3図は反射波成分検出点におけるイ
ンピーダンス・スミス図の一例を示している。
FIG. 1 is a system diagram of an embodiment of the present invention, FIG. 2 is a system diagram of a conventional automatic matching circuit, and FIG. 3 is an example of an impedance Smith diagram at a reflected wave component detection point.

Claims (2)

【特許請求の範囲】[Claims] (1)高周波電源と負荷回路の間に並列および直列の整
合用可変リアクタンス素子を置く高周波スパッタリング
装置において、 高周波電源と該整合回路の間に、負荷よりの反射波電力
を検出する結合器を置き、各リアクタンスの変化に応じ
た制御信号を検出し、あらかじめ設定されたプログラム
に従ってそれぞれの可変リアクタンス素子を制御し反射
電力最小の点を求め、その値を記憶回路に記憶し、以後
その記憶値に基づく整合操作を行うことを特徴とする高
周波スパッタリング装置等の自動負荷整合回路。
(1) In a high-frequency sputtering device in which parallel and series matching variable reactance elements are placed between a high-frequency power source and a load circuit, a coupler is placed between the high-frequency power source and the matching circuit to detect the power of reflected waves from the load. , detects the control signal corresponding to the change in each reactance, controls each variable reactance element according to a preset program, finds the point of minimum reflected power, stores that value in the memory circuit, and uses that stored value from now on. An automatic load matching circuit for high-frequency sputtering equipment, etc., characterized by performing a matching operation based on the above.
(2)高周波電源と負荷回路の間に並列および直列の整
合用可変リアクタンス素子を置く高周波スパッタリング
装置において、 高周波電源と該整合回路の間に、負荷よりの反射波電力
を検出する結合器を置き、各リアクタンスの変化に応じ
た制御信号を検出し、あらかじめ設定されたプログラム
に従ってそれぞれの可変リアクタンス素子を制御し反射
電力最小の点を求め、その値を記憶回路に記憶し、以後
その記憶値に基づく整合操作を行うに当り、 その起動時に反射電力を最小とするに必要なリアクタン
ス値を別の記憶回路に設定記憶させておき、以後その記
憶値に基づき整合操作を行うことを特徴とする高周波ス
パッタリング装置等の自動負荷整合回路。
(2) In a high-frequency sputtering device in which parallel and series matching variable reactance elements are placed between the high-frequency power source and the load circuit, a coupler is placed between the high-frequency power source and the matching circuit to detect the power of reflected waves from the load. , detects the control signal corresponding to the change in each reactance, controls each variable reactance element according to a preset program, finds the point of minimum reflected power, stores that value in the memory circuit, and uses that stored value from now on. When performing a matching operation based on this, a reactance value necessary to minimize the reflected power is set and stored in a separate memory circuit at the time of startup, and thereafter a matching operation is performed based on the stored value. Automatic load matching circuit for sputtering equipment, etc.
JP59261611A 1984-12-11 1984-12-11 Automatic load matching circuit of high frequency sputtering device Pending JPS61139111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59261611A JPS61139111A (en) 1984-12-11 1984-12-11 Automatic load matching circuit of high frequency sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59261611A JPS61139111A (en) 1984-12-11 1984-12-11 Automatic load matching circuit of high frequency sputtering device

Publications (1)

Publication Number Publication Date
JPS61139111A true JPS61139111A (en) 1986-06-26

Family

ID=17364307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59261611A Pending JPS61139111A (en) 1984-12-11 1984-12-11 Automatic load matching circuit of high frequency sputtering device

Country Status (1)

Country Link
JP (1) JPS61139111A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105714U (en) * 1991-01-29 1992-09-11 新電元工業株式会社 Impedance matching control circuit for RF generator
EP0685936A3 (en) * 1994-05-25 1996-08-07 Nokia Mobile Phones Ltd Adaptive antenna matching.
WO1997024748A1 (en) * 1995-12-29 1997-07-10 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
WO1997044812A1 (en) * 1996-05-23 1997-11-27 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor
US5982099A (en) * 1996-03-29 1999-11-09 Lam Research Corporation Method of and apparatus for igniting a plasma in an r.f. plasma processor
JP2021052017A (en) * 2016-05-24 2021-04-01 エムケーエス インストゥルメンツ,インコーポレイテッド Solid-state impedance matching system including hybrid tuning network with switchable coarse tuning network and varactor fine tuning network

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5250032B2 (en) * 1974-10-04 1977-12-21
JPS53131736A (en) * 1977-04-21 1978-11-16 Kokusai Electric Co Ltd Method of automatically tuning and matching antenna
JPS5425138A (en) * 1977-07-28 1979-02-24 Kokusai Electric Co Ltd Method of automatically matching antenna

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5250032B2 (en) * 1974-10-04 1977-12-21
JPS53131736A (en) * 1977-04-21 1978-11-16 Kokusai Electric Co Ltd Method of automatically tuning and matching antenna
JPS5425138A (en) * 1977-07-28 1979-02-24 Kokusai Electric Co Ltd Method of automatically matching antenna

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105714U (en) * 1991-01-29 1992-09-11 新電元工業株式会社 Impedance matching control circuit for RF generator
EP0685936A3 (en) * 1994-05-25 1996-08-07 Nokia Mobile Phones Ltd Adaptive antenna matching.
WO1997024748A1 (en) * 1995-12-29 1997-07-10 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
US5793162A (en) * 1995-12-29 1998-08-11 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
US5982099A (en) * 1996-03-29 1999-11-09 Lam Research Corporation Method of and apparatus for igniting a plasma in an r.f. plasma processor
WO1997044812A1 (en) * 1996-05-23 1997-11-27 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor
JPH11509976A (en) * 1996-05-23 1999-08-31 ラム リサーチ コーポレーション Method and apparatus for controlling the reactive impedance of a matching network connected between an RF source and an RF plasma processor
KR100513614B1 (en) * 1996-05-23 2005-12-09 램 리서치 코포레이션 Method and apparatus for regulating the invalid impedance of a matching network connected between an RF source and an RF plasma processor
JP2021052017A (en) * 2016-05-24 2021-04-01 エムケーエス インストゥルメンツ,インコーポレイテッド Solid-state impedance matching system including hybrid tuning network with switchable coarse tuning network and varactor fine tuning network

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