WO1997029400A1 - Structure de contact pour cablage multicouche, substrat a matrice active et leur procede de fabrication - Google Patents

Structure de contact pour cablage multicouche, substrat a matrice active et leur procede de fabrication Download PDF

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Publication number
WO1997029400A1
WO1997029400A1 PCT/JP1997/000338 JP9700338W WO9729400A1 WO 1997029400 A1 WO1997029400 A1 WO 1997029400A1 JP 9700338 W JP9700338 W JP 9700338W WO 9729400 A1 WO9729400 A1 WO 9729400A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact structure
manufacturing
same
active matrix
multilayer wiring
Prior art date
Application number
PCT/JP1997/000338
Other languages
English (en)
Japanese (ja)
Inventor
Kazumasa Hasegawa
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Priority to JP52351697A priority Critical patent/JP3646311B2/ja
Publication of WO1997029400A1 publication Critical patent/WO1997029400A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

Structure de contact pour une interconnexion multicouche entre un premier câblage comprenant de l'aluminium ou un alliage d'aluminium et un second câblage, comprenant un film conducteur transparent, caractérisé en ce qu'une couche d'arrêt est formée entre le premier et le second câblage, ladite couche contenant des matériaux présentant un niveau d'énergie libre de formation d'oxyde supérieur à celui du silicium; ou un composé de ces derniers; ou encore un composé contenant principalement ces matériaux ou leur composé.
PCT/JP1997/000338 1996-02-09 1997-02-07 Structure de contact pour cablage multicouche, substrat a matrice active et leur procede de fabrication WO1997029400A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52351697A JP3646311B2 (ja) 1996-02-09 1997-02-07 多層配線のコンタクト構造、アクティブマトリクス基板及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8/24517 1996-02-09
JP2451796 1996-02-09

Publications (1)

Publication Number Publication Date
WO1997029400A1 true WO1997029400A1 (fr) 1997-08-14

Family

ID=12140374

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/000338 WO1997029400A1 (fr) 1996-02-09 1997-02-07 Structure de contact pour cablage multicouche, substrat a matrice active et leur procede de fabrication

Country Status (2)

Country Link
JP (1) JP3646311B2 (fr)
WO (1) WO1997029400A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230321A (ja) * 1999-12-31 2001-08-24 Samsung Electronics Co Ltd 配線の接触構造及びその形成方法並びにこれを含む薄膜トランジスタ基板及びその製造方法
JP2001281694A (ja) * 2000-03-29 2001-10-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2008306043A (ja) * 2007-06-08 2008-12-18 Ulvac Japan Ltd 配線膜の形成方法、トランジスタ、及び電子装置
JP2015061952A (ja) * 2010-06-30 2015-04-02 エイチ．シー．スターク インク． モリブデンを含有したターゲット
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9837253B2 (en) 2010-06-30 2017-12-05 H.C. Starck Inc. Molybdenum containing targets for touch screen device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132833A (ja) * 1988-11-11 1990-05-22 Matsushita Electric Ind Co Ltd 薄膜配線
JPH04256324A (ja) * 1991-02-08 1992-09-11 Toshiba Corp 薄膜半導体素子の製造方法
JPH05235360A (ja) * 1992-02-21 1993-09-10 Seiko Epson Corp 液晶表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132833A (ja) * 1988-11-11 1990-05-22 Matsushita Electric Ind Co Ltd 薄膜配線
JPH04256324A (ja) * 1991-02-08 1992-09-11 Toshiba Corp 薄膜半導体素子の製造方法
JPH05235360A (ja) * 1992-02-21 1993-09-10 Seiko Epson Corp 液晶表示装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230321A (ja) * 1999-12-31 2001-08-24 Samsung Electronics Co Ltd 配線の接触構造及びその形成方法並びにこれを含む薄膜トランジスタ基板及びその製造方法
JP2001281694A (ja) * 2000-03-29 2001-10-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4522529B2 (ja) * 2000-03-29 2010-08-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2008306043A (ja) * 2007-06-08 2008-12-18 Ulvac Japan Ltd 配線膜の形成方法、トランジスタ、及び電子装置
JP2015061952A (ja) * 2010-06-30 2015-04-02 エイチ．シー．スターク インク． モリブデンを含有したターゲット
JP2016194159A (ja) * 2010-06-30 2016-11-17 エイチ．シー．スターク インク． モリブデンを含有したターゲット
US9837253B2 (en) 2010-06-30 2017-12-05 H.C. Starck Inc. Molybdenum containing targets for touch screen device
US9945023B2 (en) 2010-06-30 2018-04-17 H.C. Starck, Inc. Touch screen device comprising Mo-based film layer and methods thereof
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US10643827B2 (en) 2012-05-09 2020-05-05 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles

Also Published As

Publication number Publication date
JP3646311B2 (ja) 2005-05-11

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