WO1997029400A1 - Contact structure for multilayer wiring, active matrix substrate and method of manufacturing the same - Google Patents
Contact structure for multilayer wiring, active matrix substrate and method of manufacturing the same Download PDFInfo
- Publication number
- WO1997029400A1 WO1997029400A1 PCT/JP1997/000338 JP9700338W WO9729400A1 WO 1997029400 A1 WO1997029400 A1 WO 1997029400A1 JP 9700338 W JP9700338 W JP 9700338W WO 9729400 A1 WO9729400 A1 WO 9729400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact structure
- manufacturing
- same
- active matrix
- multilayer wiring
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Abstract
A contact structure for multilayer interconnection between a first wiring comprising aluminum or its alloy and a second wiring comprising a transparent conductive film, characterized in that a barrier layer is formed between the first and second wiring, and the barrier layer comprises materials higher in free energy of oxide formation than silicon; or their compound; or a compound composed chiefly of the materials or the compound.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52351697A JP3646311B2 (en) | 1996-02-09 | 1997-02-07 | Multilayer wiring contact structure, active matrix substrate, and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8/24517 | 1996-02-09 | ||
JP2451796 | 1996-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997029400A1 true WO1997029400A1 (en) | 1997-08-14 |
Family
ID=12140374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/000338 WO1997029400A1 (en) | 1996-02-09 | 1997-02-07 | Contact structure for multilayer wiring, active matrix substrate and method of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3646311B2 (en) |
WO (1) | WO1997029400A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230321A (en) * | 1999-12-31 | 2001-08-24 | Samsung Electronics Co Ltd | Contact structure of wiring, method of forming the same, and thin-film transistor substrate containing the same and method of manufacturing it |
JP2001281694A (en) * | 2000-03-29 | 2001-10-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacture for the same |
JP2008306043A (en) * | 2007-06-08 | 2008-12-18 | Ulvac Japan Ltd | Formation method for wiring film, transistor, and electronic apparatus |
JP2015061952A (en) * | 2010-06-30 | 2015-04-02 | エイチ.シー.スターク インク. | Molybdenum containing targets |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
US9837253B2 (en) | 2010-06-30 | 2017-12-05 | H.C. Starck Inc. | Molybdenum containing targets for touch screen device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132833A (en) * | 1988-11-11 | 1990-05-22 | Matsushita Electric Ind Co Ltd | Thin film wiring |
JPH04256324A (en) * | 1991-02-08 | 1992-09-11 | Toshiba Corp | Manufacture of thin-film semiconductor element |
JPH05235360A (en) * | 1992-02-21 | 1993-09-10 | Seiko Epson Corp | Liquid crystal display device |
-
1997
- 1997-02-07 JP JP52351697A patent/JP3646311B2/en not_active Expired - Fee Related
- 1997-02-07 WO PCT/JP1997/000338 patent/WO1997029400A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132833A (en) * | 1988-11-11 | 1990-05-22 | Matsushita Electric Ind Co Ltd | Thin film wiring |
JPH04256324A (en) * | 1991-02-08 | 1992-09-11 | Toshiba Corp | Manufacture of thin-film semiconductor element |
JPH05235360A (en) * | 1992-02-21 | 1993-09-10 | Seiko Epson Corp | Liquid crystal display device |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230321A (en) * | 1999-12-31 | 2001-08-24 | Samsung Electronics Co Ltd | Contact structure of wiring, method of forming the same, and thin-film transistor substrate containing the same and method of manufacturing it |
JP2001281694A (en) * | 2000-03-29 | 2001-10-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacture for the same |
JP4522529B2 (en) * | 2000-03-29 | 2010-08-11 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
JP2008306043A (en) * | 2007-06-08 | 2008-12-18 | Ulvac Japan Ltd | Formation method for wiring film, transistor, and electronic apparatus |
JP2015061952A (en) * | 2010-06-30 | 2015-04-02 | エイチ.シー.スターク インク. | Molybdenum containing targets |
JP2016194159A (en) * | 2010-06-30 | 2016-11-17 | エイチ.シー.スターク インク. | Target containing molybdenum |
US9837253B2 (en) | 2010-06-30 | 2017-12-05 | H.C. Starck Inc. | Molybdenum containing targets for touch screen device |
US9945023B2 (en) | 2010-06-30 | 2018-04-17 | H.C. Starck, Inc. | Touch screen device comprising Mo-based film layer and methods thereof |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
US10643827B2 (en) | 2012-05-09 | 2020-05-05 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
Also Published As
Publication number | Publication date |
---|---|
JP3646311B2 (en) | 2005-05-11 |
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