WO1997008356A3 - Depot en phase gazeuse par procede chimique organometallique modifie de couches minces des groupes iii a v - Google Patents

Depot en phase gazeuse par procede chimique organometallique modifie de couches minces des groupes iii a v Download PDF

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Publication number
WO1997008356A3
WO1997008356A3 PCT/US1996/013188 US9613188W WO9708356A3 WO 1997008356 A3 WO1997008356 A3 WO 1997008356A3 US 9613188 W US9613188 W US 9613188W WO 9708356 A3 WO9708356 A3 WO 9708356A3
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WO
WIPO (PCT)
Prior art keywords
reactor
films
susceptor
modified
substrate
Prior art date
Application number
PCT/US1996/013188
Other languages
English (en)
Other versions
WO1997008356A2 (fr
Inventor
Steven P Denbaars
Bernd P Keller
Stacia Keller
David J Kapolnek
Original Assignee
Steven P Denbaars
Bernd P Keller
Stacia Keller
David J Kapolnek
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steven P Denbaars, Bernd P Keller, Stacia Keller, David J Kapolnek, Univ California filed Critical Steven P Denbaars
Publication of WO1997008356A2 publication Critical patent/WO1997008356A2/fr
Publication of WO1997008356A3 publication Critical patent/WO1997008356A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Abstract

On décrit une machine améliorée (10) permettant la croissance de cristaux de nitrures métalliques en couches minces, dans des conditions de dépôt en phase gazeuse par procédé chimique organométallique, et comportant un réacteur (11) transparent à infrarouge, en quartz ou en un autre matériau pouvant résister à des pressions de 1 à 10000 torrs environ et à une température de 0 à 1500 °C environ. Ce réacteur comprend un orifice d'entrée (12) pour au moins un composé organométallique volatil, un orifice d'entrée (12) pour un gaz azoté, un orifice de sortie (13), ainsi qu'une zone de réaction (17) destinée à la croissance d'une couche de nitrure métallique du groupe III sur un substrat (20) maintenu par un suscepteur. Une source de rayonnement infrarouge (18) est disposée juste à l'extérieur du réacteur (11) afin d'émettre un rayonnement sur la surface (22) de croissance du substrat (20), et une source de chaleur rayonnante (21) est destinée à chauffer le suscepteur (14). Cette machine (10) produit des couches aux propriétés utiles en procurant une meilleure maîtrise de la formation des couches minces de nitrures, et elle permet une mécanisation donnant lieu à une production en masse de ces couches, ce qui est moins coûteux. Ces couches s'utilisent comme des semiconducteurs comprenant des dispositifs DEL.
PCT/US1996/013188 1995-08-18 1996-08-16 Depot en phase gazeuse par procede chimique organometallique modifie de couches minces des groupes iii a v WO1997008356A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51652795A 1995-08-18 1995-08-18
US08/516,527 1995-08-18

Publications (2)

Publication Number Publication Date
WO1997008356A2 WO1997008356A2 (fr) 1997-03-06
WO1997008356A3 true WO1997008356A3 (fr) 1997-04-24

Family

ID=24055979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/013188 WO1997008356A2 (fr) 1995-08-18 1996-08-16 Depot en phase gazeuse par procede chimique organometallique modifie de couches minces des groupes iii a v

Country Status (1)

Country Link
WO (1) WO1997008356A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405272B (en) * 1997-06-25 2000-09-11 Sony Corp Method and apparatus for growth of a nitride III-V compound semiconductor
DE19855637A1 (de) 1998-12-02 2000-06-15 Aixtron Ag Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung
EP1113485A3 (fr) 1999-12-27 2005-08-31 Matsushita Electric Industrial Co., Ltd. Procédé de fabrication d'un dispositif semiconducteur
US6841406B2 (en) * 2001-11-06 2005-01-11 Edward Brittain Stokes Methods and apparatus for a semiconductor device
AU2003217530A1 (en) * 2002-04-01 2003-10-13 Ans Inc Apparatus and method for depositing organic matter of vapor phase
DE10325629A1 (de) * 2003-03-21 2004-10-07 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition
KR101354140B1 (ko) 2008-02-27 2014-01-22 소이텍 Ｃｖｄ 반응기 내에서 가스 전구체들의 열화
US8221853B2 (en) * 2008-09-03 2012-07-17 The Regents Of The University Of California Microwave plasma CVD of NANO structured tin/carbon composites

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
US4558660A (en) * 1982-03-16 1985-12-17 Handotai Kenkyu Shinkokai Semiconductor fabricating apparatus
DE4006449A1 (de) * 1989-03-01 1990-09-13 Toyoda Gosei Kk Substrat zum wachsenlassen eines galliumnitridverbindung-halbleiterbauelements und lichtemitterdiode
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
JPH04187597A (ja) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd 窒化ガリウム薄膜の製造方法
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558660A (en) * 1982-03-16 1985-12-17 Handotai Kenkyu Shinkokai Semiconductor fabricating apparatus
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
DE4006449A1 (de) * 1989-03-01 1990-09-13 Toyoda Gosei Kk Substrat zum wachsenlassen eines galliumnitridverbindung-halbleiterbauelements und lichtemitterdiode
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JPH04187597A (ja) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd 窒化ガリウム薄膜の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element

Also Published As

Publication number Publication date
WO1997008356A2 (fr) 1997-03-06

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