Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  in optical waveguides, not otherwise provided for in this subclass
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/1071—Ring-lasers
  • H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F2203/00—Function characteristic
  • G02F2203/05—Function characteristic wavelength dependent
  • G02F2203/055—Function characteristic wavelength dependent wavelength filtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
  • H01S3/09—Processes or apparatus for excitation, e.g. pumping
  • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
  • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/11—Comprising a photonic bandgap structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Definitions

• the present invention relates to microcavity semiconductor lasers and, more particularly, to microdisk, microcylinder, microannulus and like semiconductor lasers.
• microcavity semiconductor lasers recently have been described for operation at liquid nitrogen temperature and room temperature. Such microcavity semiconductor lasers employ an active lasing medium that supports optical modes in the form of a whispering gallery mode where photons skimming around the circumference of a microdisk or microcylinder having an appropriately small diameter are continually totally reflected.
• the thin microdisk or microcylinder is positioned in a surrounding medium (e.g. air) having a high contrast of refractive index relative to that of the active lasing medium such that the optical mode is strongly confined inside the microdisk or microcylinder in the vertical direction and coupled to the active lasing medium comprising one or more quantum wells.
• a surrounding medium e.g. air
• a whispering-gallery-mode microdisk semiconductor laser is described by McCall et al. in "Whispering-gallery mode ⁇ microdisk lasers" in Appl. Phys. Lett. 60, (3), 20 January 1992.
• a whispering-gallery-mode microcylinder semiconductor laser is described by Levi et al. in "Room-temperature lasing action in In 0 . 51 Ga 0 . 49 P/In 02 Ga 0 . 8 As microcylinder laser diodes" in Appl. Phys. Lett. 62, (17) , 26 April 1993.
• Microcavity semiconductor lasers are advantageous as compared to conventional semiconductor lasers in being much smaller in size and requiring substantially less minimum operating current (power) in the range of microwatts.
• power in the range of microwatts.
• the photons are strongly confined inside the microdisk or microcylinder. This is disadvantageous in that a directional coupling of light out of the laser is necessary for useful applications.
• An object of the present invention is to provide microcavity seminconductor lasers having features amenable for coupling light out from the laser without substantially adversely affecting the Q value and the low lasing threshold of the microcavity.
• Another object of the present invention is to provide microcavity seminconductor lasers having features amenable for coupling light out from the laser to integrated optical circuits.
• the present provides a microcavity semiconductor laser comprising a first micromember, such as a microdisk, microcylinder or microannulus, having a lasing microcavity (one or more quantum wells) with a circular cross-sectional periphery and a second waveguiding micromember, which may comprise a microdisk, microcylinder or microannulus, spaced from the first lasing micromember in a different plane, such as at a different epitaxial level during fabrication of the laser by layer growth processes.
• the first lasing micromember and the second waveguiding micromember are optically coupled by, for example, resonant photon coupling by being spaced apart a selected distance from one another with a material having a lower refractive index disposed between the micromembers.
• the first lasing micromember and second waveguiding micromember are spaced apart by a distance selected to provide a given coupling efficiency therebetween.
• the high Q value and low lasing threshold of the lasing microcavity is maintained by providing a light output coupling on the second waveguiding micromember, rather than on the first lasing micromember.
• the light output coupling on the second waveguiding micromember may comprise in one embodiment of the invention a surface, such as one or more flat surfaces or windows, interrupting an outer circumference of the waveguiding micromember.
• the light output coupling may comprise in another embodiment of the invention grating or other surface on an axial end surface of the waveguiding micromember and having a vertical component of light emission.
• the light output coupling may comprise in another embodiment of the invention a linear output waveguide integral to the second waveguiding micromember, or an arcuate waveguide encircling a portion of the circumferential periphery of the micromember pursuant to an additional embodiment of the invention.
• the first micromember comprises one or more InGaAs semiconductor microdisks, microcylinders, or microannulus as quantum wells separated by appropriate barrier layers and the second waveguiding micromember comprises a InGaAsP semiconductor microdisk, microcylinder, or microannulus.
• the optical coupling can comprise a low refractive index InP pedestal, microcylinder or microannulus.
• the present invention also provides a laser comprising a waveguiding or lasing micromember having a circular cross-sectional periphery and an arcuate light output waveguide encircling a portion of the circumference of the waveguiding micromember to provide light output therefrom.
• the arcuate light output waveguide can comprise a circular portion encirling the micromember and at least one linear portion terminating in an end.
• the light output waveguide is at a level on a substrate compatible with an integrated optical circuit present on the substrate so as to provide light output signals to the optical circuit.
• the lasers of the present invention provide the advantages associated with microcavity semiconductor lasers while providing light output coupling from the laser that is usable in a service application and that is compatible with integrated optical circuits.
• Figure 1 is a schematic view of a microcavity (microdisk) laser in accordance with one embodiment of the invention.
• Figure 2 is a graph of coupling percentage versus coupling length for a double-disk laser pursuant to an embodiment of the invention with a spacing between microdisks of 0.65 microns.
• Figure 3 is a graph of the lasing spectra versus wavelength for a double-microdisk laser pursuant to an embodiment of the invention.
• Figure 4 is a photograph of edge-emitting lasing light output from the opening in the upper waveguiding microdisk of the laser of Fig. 1 at a wavelength of 1.5 microns.
• Figure 5 is a schematic view of a microcavity (microcylinder) laser in accordance with another embodiment of the invention.
• Figure 6 is a schematic view similar to Figure 5 of a microcavity (microcylinder) laser including a light output coupling waveguide integral with the lower waveguiding microcylinder.
• a microcavity (microcylinder) laser including a light output coupling waveguide integral with the lower waveguiding microcylinder.
• Figure 7 is a schematic view of a double microcylinder laser of the invention showing its layered structure.
• Figure 8 is a schematic view of a microcavity laser including an arcuate waveguide spaced about and encircling a portion of the circumferential periphery of the lower micromember pursuant to another embodiment of the invention.
• Figure 9 is a schematic view of a microcavity laser including an arcuate waveguide spaced about and encircling a portion of the circumferential periphery of a lower microannulus pursuant to another embodiment of the invention.
• a microcavity semiconductor laser in accordance with one embodiment of the invention is illustrated schematically as including a first lower microdisk (micromember) 10 referred to as lasing disk in Figure 1 and a second upper, transparent waveguiding microdisk (micromember) 12 referred to as guiding disk in Figure 1 disposed in a different plane (different epitaxial level during epitaxial layer growth) from the lower microdisk 10 so as to have low light absorption.
• the first lower lasing microdisk 10 and second upper waveguiding microdisk 12 are shown having the same diameters.
• the invention is not so limited and can be practiced with the microdisks 10, 12 having different diameters and different shapes at some expense of lowering the optical coupling efficiency between the microdisks.
• the first lower lasing microdisk 10 can be excited by suitable means such as optically (e.g. by a pumping laser providing pulsed light of approprite duty cycle) or electrically (e.g. by electrical current pulses of appropriate duty cycle via lead wires attached to a top and bottom of the micromember) as is known.
• suitable means such as optically (e.g. by a pumping laser providing pulsed light of approprite duty cycle) or electrically (e.g. by electrical current pulses of appropriate duty cycle via lead wires attached to a top and bottom of the micromember) as is known.
• the lower lasing microdisk 10 and the upper waveguiding microdisk 12 are optically coupled by resonant photon tunneling by being spaced apart a selected distance from one another with a material having a lower refractive index disposed between the micromembers.
• the microdisks 10, 12 are spaced apart by a pedestal 14 comprising InP, although the invention is not so limited as the microdisks also could be suspended or otherwise spaced to provide a low refractive index material, such as air, Si0 2 , acrylic, or semiconductor (e.g. InP), therebetween to provide resonant photon tunneling therebetween.
• the lower lasing microdisk 10 is connected to a lower substrate by an integral upstanding pedestal 16.
• the upper waveguiding disc 12 includes a circumferential V-shape or wedge- shaped opening or notch 18 as a light output coupling from the laser.
• the double microdisk laser shown in Figure 1 was formed by molecular beam epitaxial growth of layers of the InGaAs/InGaAsP and then shaping the layers to the double disk configuration shown by multistep photolithographic techniques and selective reactive ion etching techniques.
• an initial In o. ⁇ 4 Ga o.i6 A So.33 P o.67 etch stop layer was grown on the top of the semi-insulating (100) InP substrate shown in Figure 1.
• a 1.0 micron thick InP pedestal layer was grown on the etch stop layer.
• a 0.2 micron thick microcavity quantum well (MQW) layer was grown on the pedestal layer.
• the MQW layer was grown to comprise three (3) In 0 ⁇ 53 Ga 0.47 As quantum layers or wells each of approximate 100 Angstroms thickness sandwiched by In 0-84 Ga 0.16 As 0 . 33 P 0 . 67 barrier layers of approximate 100 Angstroms thickness with end caps having the barrier composition of approximate 700 Angstroms thickness.
• a second InP pedestal layer having a 0.65 micron thickness was grown on the MQW layer followed by a final passive layer of In 0-84 Ga 0-16 As 0 . 33 P 0 . 67 to a thickness of approximately 0.2 micron as the top guiding microdisk layer.
• Other suitable material systems e.g. InGaAs/InAlGaAs
• Multi-step photolithographic techniques were used to fabricate the the double-disk lasers having outer diameters of 3 microns in one trial and 10 microns in another trial.
• the opening 18 was patterned first using an AZ-1350J photoresist and etched down around 0.4 micron using reactive ion etching without etching the MQW layer. After removing the photoresist, the circular cross-section microdisks 10, 12 were patterned and carefully aligned with the opening. Then, reactive ion etching was used again to etch the circular patterns down vertically (approximately 1.2 microns) into the bottom pedestal layer to form the microdisks 10, 12 having a right cylindrical shape (i.e.
• a gas mixture comprising a methane, hydrogen, and argon in a ratio of 5:17:8 was used under a gas pressure of 45 millitorr and a plasma beam power of 90 Watts.
• a highly selective HC1 etchant (such as 10 volume % HC1 aqueous solution) was then used to clear the remaining pedestal layers horizontally to form the two supporting InP pedestals or pillars 14,16 shown in Figure 1.
• the etched InP pedestals or pillars exhibited a rhombus shape upon examination under scanning electron microscope as a result of anisotropic etching of the InP material.
• the upper microdisk 12 of the double-disk laser comprises a basically passive, absorptionless material at a different epitaxial level (during layer growth) for light guiding purposes.
• the photons generated in the lower MQW microdisk 10 leak slowly out into the upper waveguiding microdisk 12 via resonant waveguide coupling (resonant photon tunneling) through the InP pedestal or pillar 14.
• the coupling efficiency between the MQW microdisk 10 and the waveguiding microdisk 12 can be controlled by appropriately selecting the distance of separation between the microdisks 10, 12; e.g. about 0.65 micron in the fabrication of the 3 micron and 10 micron diameter microdisks described hereabove. As the separation distance between the microdisks 10, 12 increases, the coupling efficiency decreases.
• Figure 2 shows an estimate of the coupling percentage per roundtrip length versus the coupling length (which is approximately the circumference of the microdisk structure) for a 0.65 micron separation between the . microdisks 10,12.
• the coupling length is the roundtrip length of the photons propagating around the circumference of the microdisk, given approximately by ⁇ D, where D is the microdisk diameter.
• ⁇ D the roundtrip length of the photons propagating around the circumference of the microdisk diameter.
• This double-microdisk structure enables the MQW microdisk resonator to maintain a near perfect microdisk shape with associated high Q value and low lasing threshold, while a light output coupling feature or structure can be provided on the upper waveguiding microdisk 12 to couple light out of the laser.
• a light output coupling feature or structure can be provided on the upper waveguiding microdisk 12 to couple light out of the laser.
• the light output coupling comprises V- shaped opening 18 interrupting the circumference of the upper waveguiding microdisk 12 so as to direct the light out from the double-microdisk laser.
• the opening 18 forms flat surfaces or windows 18a, 18b through which light can be coupled out from the laser.
• the lasing characteristics of the double-microdisk laser (microdisk diameter of 10 microns) of the present invention were analyzed by optical excitation using a Nd:YAG pump laser at 1064 nanometer.
• the pump laser was modulated by an acousto-optic modulator with a varying duty cycle and focused to a spot size covering the entire axial end equal to or larger than the area of microdisk 10.
• the double-microdisk laser was cooled down to liquid nitrogen temperature.
• the emission from the double-microdisk laser was collected by an objective lens dispersed by an optical grating spectrometer (resolution of 1 nanometer) and detected using a lock-in technique and a liquid-nitrogen cooled germanium detector.
• Figure 3 shows the lasing spectra obtained from the double-microdisk laser (10 microns diameter) at and above the lasing threshold.
• the solid data line relates to pump power above threshold, whereas the dashed data line relates to pump power at the threshold.
• the threshold is where the peak pump laser power is approximately 500 microwatts with a 1 microsecond pulse width and 1% duty cycle to reduce the heating.
• a double-microdisk laser without the opening 18 i.e. having an uninterrupted circumference on the upper microdisk 12 was fabricated and tested for emission under the same conditions.
• the comparison double-microdisk laser without the light output coupling opening 18 exhibited a lower lasing threshold (approximately 300 microwatts) as a result of the lower light loss from the upper" aveguiding microdisk. This is also the typcial threshold value for a single microdisk laser with the same material composition and diameter as the bottom micordisk 10.
• the lasing threshold of double-microdisk laser with a 3 micron disk diameter of the invention having the opening 18 in the upper micordisk 12 was determined to be approximately 25 microwatts, which is almost the same as that of a single microdisk laser with same diameter with an uninterrupted circumference. This result is indicative that the double-microdisk laser of the invention with opening 18 provides a high Q microcavity without deteriorating the lasing threshold.
• the directional lasing output from the opening 18 of the upper waveguiding microdisk 12 of the double- microdisk laser of the invention was imaged using an infrared camera having an imaging tube with a substrate spaced about 10 microns from the flat surfaces 18a, 18b.
• the image of the lasing output of the opening 18 is shown in Figure 4 where it is can be seen that lasing light is scattered from the microdisk 12 itself as well as from a strong edge-emitting spot from light escaping the opening 18 and striking the imaging substrate at about 10 microns from the opening 18.
• the image was taken at a pumping power twice that of the threshold value. In order to obtain the image, the pump laser had to be strongly attenuated with filters before the infrared camera.
• Figure 4 clearly shows that the opening 18 on the upper waveguiding microdisk 12 provides a leakage source of the lasing photons and directs the lasing light out from the double-microdisk laser.
• the bright dot on the image is due to a burned spot on the infrared imaging tube.
• a grating, surface or opening having a 45 degree or other suitable angle can be formed on the upper axial end of the waveguiding microdisk 12 to provide a vertical component of lasing light emission from the upper microdisk 12 of the laser of the invention.
• a microcavity semiconductor laser in accordance with another embodiment of the invention is illustrated schematically as including a first upper microcylinder (micromember) 20 referred to as lasing cylinder in Figures 5-6 and a second lower transparent waveguiding microdisk (micromember) 22 referred to as guiding cylinder in Figures 5-6 disposed in a different (lower) plane or epitaxial level (during epitaxial layer growth) from the microcylinder 20 and having low light absorption.
• the upper lasing microcylinder 20 is spaced a distance from the lower waveguiding microcylinder 22 to provide optical coupling therebetween by resonant photon tunneling.
• the microcylinders 20, 22 are spaced apart by a microcylinder 24 comprising InP to this end.
• the lower guiding microcylinder 22 is supported on the lower InP substrate 29 shown.
• the lower waveguiding microcylinder 22 includes a linear light output waveguide 28 integral therewith as a light output coupling from the laser.
• the double microcylinder laser shown in Figures 5-7 can be formed by molecular beam epitaxial growth of layers of the InGaAs/InGaAsP system (or other suitable material systems) described above for the double microdisk embodiment and then shaping the layers to the double microcylinder configuration shown by the multistep photolithographic techniques and selective reactive ion etching techniques in similar manner as described above for the double microdisk laser.
• the MQW layer can be grown with x and y values selected to provide three In 0 . 53 Ga 047 As quantum layers or wells each of approximate 100 Angstroms thickness sandwiched by In 0 . 84 Ga 016 As 033 P 0 .
• a lower buffer layer is provided on the substrate and comprises InP of approximately 1000 Angstrom thickness, while a top cap comprising InP of 1 micron thickness can be provided on the MQW layer.
• the lower microcylinder 22 of the double- microcylinder laser comprises a basically passive material with low absorption for light guiding purposes.
• the photons generated in the upper MQW lasing microcylinder 20 leak slowly out into the lower waveguiding microcylinder 22 via the resonant waveguide coupling microcylinder 28.
• the coupling efficiency between the lasing microcylinder 20 and the waveguiding microcylinder 22 can be controlled by selecting the distance of separation therebetween. As the separation distance between the microcylinders 20, 22 increases, the coupling efficiency decreases.
• the linear light output waveguide 28 integral with the lower microcylinder 22 includes material layers in a sequence like that of the lower micromember 22 since it is formed integrally therewith and provides a light output coupling from the laser that is at a level on the substrate 29 compatible with integrated optical circuits present on the substrate 29 so as to provide light output signals to the optical circuit.
• Double microcylinder lasers of the invention are advantageous in that they have much shorter cavity lengths than the usual conventional semiconductor lasers. This enables the double microcylinder lasers of the invention to have a large frequency tunability without mode hopping via direct injection current control.
• the cavity length for usual conventional semiconductor lasers is 0.3 mm with an actual optical path of about 1 mm. With such a long optical path, the usual conventional laser has approximately 50 cavity resonance modes under the gain curve of the active medium. Because of the large number of frequency modes, the frequency spacing between two adjacent modes is small. As a result of the small frequency spacing, the laser frequency tunability is limited.
• the double microcylinder lasers of the invention have short cavity lengths and contain much fewer cavity resonance modes (e.g. 1-5 modes) under the gain curve. The fewer number of resonance modes allows a larger frequency tunability via direct current control without frequency hopping.
• the microcavity lasers of the invention Due to the low-loss high Q cavities, the microcavity lasers of the invention have high intra- cavity intensities.
• the high intra-cavity intensities will give rise to high stimulated emission rates, leading to fast carrier response time for the carrier density under direct current modulations.
• the fast carrier response time combined with the small size of the microcavities should lead to increased modulation bandwidths.
• FIG. 8 another embodiment of the invention is illustrated comprising a lower micromember (microdisk or microcylinder) 50 and an upper micromember (not shown) identical to the lower micromember 50 and having features like those described hereabove.
• the lower micromember 50 can be a waveguiding micromember while the upper micromember (not shown) can be a lasing micromember.
• the lower micromember 50 can be a lasing micromember while the upper micromember (not shown) can be a waveguiding micromember or can be omitted.
• the lower and upper micromembers are spaced a distance apart in a manner described above to provide optical coupling therebetween by resonant photon tunneling.
• the lower micromember 50 can be disposed on Si0 2 layers on a GaAs substrate as shown and described below.
• An arcuate light output waveguide 52 is disposed about the lower micromember 50.
• the waveguide 52 can be integral with or spaced from the micromember 50 to provide a gap or distance that provides optical output coupling by resonant photon tunneling.
• the waveguide 52 can have typical dimensions of 0.2 to 2 micron width and 0.2 to 1 micron height. A gap up to 1.0 micron wide (e.g. 0.5 micron wide) typically has been used to this end.
• the light output waveguide 52 includes an arcuate, circular portion 52a that is spaced from and encircles the circumferential periphery (e.g.
• the lower micromember 50 extends in one ore more linear, parallel legs 52b (two shown) that terminate in flat ends 52c that provide light output at a level on the GaAs substrate compatible with integrated optical circuits present on the substrate so as to provide light output signals to the optical circuit.
• the waveguide 52 can comprise the same material layer sequence as the lasing micromember and would be optically pumped. Alternately, the waveguide 52 can comprise the above-described transparent InGaAsP waveguide material free of quantum wells without optical pumping. When the lower micromember 50 is a waveguiding micromember, the waveguide 52 will comprise the same transparent material without quantum wells as the waveguidng micromember without optical pumping.
• Figure 9 illustrates schematically another embodiment of the invention similar to that of Figure 8 with the exception that a lower microannulus 50' is employed in lieu of the lower microdisk or microcylinder of Figure 8.
• the lower microannulus 50' can be a waveguiding micromember while the identical upper microannulus (not shown) can be a lasing micromember. Alternately, the lower microannulus 50' can be a lasing micromember while the upper microannulus (not shown) can be a waveguiding micromember or can be omitted.
• the microannulus can have an outer diameter similar to that described hereabove for the microdisks and microcylinders with a typical ring or annulus width of 0.2 to 2 microns and height of 0.2 to 1 micron. In Figure 9, like features of Figure 8 are designated by like reference numerals primed.
• the lasers shown in Figures 8 and 9 having the dimensions described can be formed by molecular beam epitaxial growth of layers of the InGaAs/InGaAsP system (or other suitable material systems) as described hereabove and then shaping the layers to the double microcylinder configuration shown by the multistep photolithographic techniques and selective reactive ion etching techniques in similar manner as described hereabove for the double microdisk laser.
• a different fabrication process can be used involving nanofabrication techniques including electron-beam (e- beam) lithography and reactive ion etching (RIE) .
• an InP substrate can be coated with an epitaxial InGaAsP/InGaAs laser layer structure of 0.19 micron thickness.
• three 100 Angstrom thick quantum well layers (In 053 Ga 047 As) can be separated by 100 Angstrom thick barrier layers (In 084 Ga 0 . 16 As 0 . 33 P 0 . 67 ) . They can be sandwiched by two 700 Angstrom thick (In 084 Ga 0 . 16 As 0 . 33 P 0 . 67 ) layers on both sides.
• a wafer bonding and etching technique can be used to transfer the thin microannulus 50' on top of a low- index Si0 2 cladding on a GaAs substrate.
• Electron- beam lithography is used to write the microannulus pattern on PMMA (poly methyl methylmethacrylate) coated on top of the Si0 2 layer. The pattern then is transferred down to the Si0 2 layer by etching away the unmasked region using the RIE process with CHF 3 as the etchant gas under 31 millitorrs with 60 Watts plasma power and then the PMMA is removed.
• PECVD plasma enhanced chemical vapor deposition
• the pattern on Si0 2 then forms the mask for subsequent etching of the InGaAsP layer.
• the RIE process is used to etch the microannulus down vertically through the 0.19 micron InGaAsP/InGaAs epitaxial layer structure into the InP substrate.
• a gas mixture of methane, hydrogen, and argon can be used in a ratio of 10:34:10 under a gas pressure of 45 millitorrs and a plasma beam power of 90 Watts plasma power.
• the substrate is removed as follows.
• the RIE etched sample is deposited with 0.75 micron thick Si0 2 using PECVD.
• a piece of GaAs substrate covered with 0.75 micron thick Si0 2 deposited via PECVD is then prepared.
• the two substrates are Si0 2 face-to-face bonded together using acrylic.
• a highly selective HC1 etchant (HC1 plus H 3 P0 4 in 1:1 ratio) was used to remove the InP substrate, leaving the microannulus laser structure on 1.5 micron thick Si0 2 on the GaAs substrate.
• the estimated number of cavity modes with frequencies in the photoluminescence spectrum are less than two (single mode) if the diameter of the micromember is less than 5 microns and the spectral gain width of the quantum well is of. the typical value of 60 nanometers. Microcavity outer diameters in the range of 2 microns to 5 microns are preferred to this end.
• the invention is not so limited and can be practiced using a lasing microcavity comprising one or more active quantum well (MQW) layers having a general circular cross-sectional periphery with a diameter up to 30 microns for example, such as from 10 to 30 microns, to provide an active optical medium that supports waveguiding optical modes, which include, but are not limited to, the whispering gallery mode.
• MQW active quantum well
• the invention also is not limited to the particular micromembers described and shown in the drawings and can be practiced using microdisk, microcylinder, microannulus (microring) and other shape micromembers so dimensioned as to provide an active optical medium that supports waveguiding optical modes.

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• 1995
  • 1995-05-25 US US08/450,284 patent/US5825799A/en not_active Expired - Fee Related
• 1996
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