WO1995034000A1

WO1995034000A1 - Connecting device and its manufacture

Info

Publication number: WO1995034000A1
Application number: PCT/JP1995/001058
Authority: WO
Inventors: Susumu Kasukabe; Mitsuo Usami; Keijiro Uehara; Takashi Tase
Original assignee: Hitachi, Ltd.
Priority date: 1994-06-03
Filing date: 1995-05-31
Publication date: 1995-12-14

Abstract

A connecting device provided with contact terminals (42) which are brought into contact with an object to be inspected. The contact area is small and accordingly the contact point density is high. Projections for forming the terminals (42) are formed by anisotropically etching a silicon wafer (28) using a silicon dioxide film as a mask, and cantilevers having the projections of U-shape cross section are formed by anisotropically etching the silicon dioxide film around the projections. The terminals (42) and lead-out wiring (40) are formed using a conductive coating film. The wafer (28) and a wiring board (70) are united in one body with a buffer layer (46) in between. Thereafter, the lead-out wiring (72) is connected to electrodes (73) on the board (70).

Description

Specification

CONNECTION DEVICE AND ITS MANUFACTURING METHOD

The present invention relates to a connection device having a contact terminal for transmitting an electric signal by contacting an opposing electrode, a method of manufacturing the same, and a test device using the same, and particularly to a large number of high-performance semiconductor device inspections. The present invention relates to a connection device suitable for contacting an electrode having a high density. Background art

A large number of semiconductor elements for LSI are provided on a semiconductor wafer, and each is cut into chips. For example, in the wafer 1 shown in FIG. 28 (A), a large number of semiconductor elements (chips) 2 for LSI are provided on the surface thereof, and they are separated and used as LSIs. FIG. 28 (B) is an enlarged perspective view of one of the semiconductor elements 2 _c . On the surface of the semiconductor element 2, a large number of electrodes 3 are arranged along the periphery thereof. It has been.

In order to industrially produce a large number of such semiconductor elements 2 and inspect their electrical performance, a connection device having a structure as shown in FIGS. 29 and 30 is used. This connection device is composed of a probe card 4 and a probe 5 made of a tungsten needle which is inclined from the probe card 4. In the inspection using this connection device, a method is used in which the electrode 3 is rubbed by a contact pressure utilizing the deflection of the probe 5 to make contact, and the electrical characteristics thereof are inspected. In addition, as the density of semiconductor elements has increased, as shown in FIG. 31, a chip-shaped semiconductor element having solder bumps 6 for solder connection on its electrodes, as shown in FIG. Child 2 is being developed. As a method for connecting the semiconductor element 2, as shown in FIG. 32, there is a method in which the semiconductor element 2 faces the electrode 8 on the surface of the wiring board 7 and is connected via the solder bump 6. . This method is suitable for high-density mounting and high-yield batch connection, and its application is expanding.

As an inspection method and an inspection apparatus capable of performing a characteristic inspection of a semiconductor element when an operation test using a high-speed signal becomes necessary when the density and pitch of the semiconductor element are further advanced as described above, There is a technique described in Japanese Patent Publication No. 4-7141. This technology uses a spring probe that has two movable pins urged by a panel so as to protrude in opposite directions to each other so that they can be inserted into and retracted from a tube. In other words, the movable pin at one end of the spring probe is brought into contact with the electrode of the inspection object, and the movable pin at the other end is brought into contact with the terminal provided on the substrate on the measurement circuit side. Perform an inspection.

As an example of an ultra-fine probe other than a spring probe, there is a technology described on pages 601 to 607 of the collection of lecture papers of ITC (International Test Conference) in 1998. FIG. 33 is a schematic view of the structure, and FIG. 34 is an enlarged perspective view of the main part. The conductor inspection probe used here is formed by forming wiring 11 on the upper surface of a flexible dielectric film 1.0 using lithography technology, and providing the wiring at a position corresponding to the electrode of the semiconductor to be inspected. A semicircular bump 13 formed on the via 12 of the body film 10 by plating is used as a contact terminal. According to this technique, a bump 13 connected to an inspection circuit (not shown) through a wiring 11 formed on the surface of a dielectric film 10 and a wiring board 14 is formed by a leaf spring 15 by a leaf spring 15. In this method, signals are transmitted and received by pressing against the electrodes of the semiconductor element to be inspected for inspection. Further, there is one described in Japanese Patent Application Laid-Open No. 5-212118 (corresponding U.S. application Ser. No. 1991, 750842). This is done by using a depression tool that has a metal plate, for example, a stainless steel plate, partially covered with a non-conductive film such as Teflon, and a metal part that is not covered with a projection with a sharp pointed tip. By pressing the protrusion, a depression having a shape corresponding to the shape of the protrusion is formed, and a metal layer is formed by plating a metal thereon, and further, a dielectric substrate is laminated thereon. Then, the dielectric substrate including the metal layer is peeled off from the metal plate. That is, this is one in which a plurality of connector pads having sharp contact portions are arranged on a base. Then, this sharp contact portion is pressed against the integrated circuit pad to perform an inspection.

By the way, in recent years, with the increase in the density of semiconductor elements, the number of pins for inspection probes has increased, and the development of simple connection devices for transmitting electric signals between the electrodes of the semiconductor element and the inspection circuit has been developed. Is desired. Therefore, from such a viewpoint, the above-described conventional technology will be examined.

In the conventional probe card inspection method shown in FIGS. 29 and 30, due to the shape of the probe 5, the concentrated inductance there is large, and there is a limit to the inspection with high-speed signals. That is, assuming that the characteristic impedance of the signal line on the probe card is R and the concentrated inductance of the probe is L, the time constant is LZR. Therefore, in the case of R = 50 o hm and L = 50 n H, the time constant is 1 ns. When handling such a high-speed signal, the waveform becomes dull and accurate inspection cannot be performed. Therefore, it is usually limited to DC characteristics inspection. Further, in the above-described probing method, there is a limit in the spatial arrangement of the probes, and it is impossible to cope with an increase in the density of the electrodes of the semiconductor element and an increase in the total number.

On the other hand, the method using a spring probe consisting of two movable pins can inspect high-speed electrical characteristics because the length of the probe is relatively short. is there. However, self-inductance is almost proportional to bare probe length. Therefore, for a probe with a diameter of 0.2 mm and a length of 10 mm, its inductance is about 9 nH. Crosstalk noise and ground level fluctuations (ground return current) that disturb high-speed electrical signals are functions of the self-inductance described above, and are almost proportional to the bare probe length. Therefore, when using a high-speed signal of several hundred MHz or more, a short probe of 10 mm or less is required. However, producing such a spring probe is difficult and impractical.

In addition, the method of using a bump formed by plating a part of the copper wiring as a probe shown in FIGS. 31 and 32 as a probe has a flat or semi-circular shape at the tip of the bump, so that the aluminum electrode or solder The contact resistance becomes unstable for contacted materials that generate oxides on the surfaces of materials such as electrodes, and the load at the time of contact must be several hundred mN or more. However, there is a problem with making the contact load too large. In other words, high integration of semiconductor devices is progressing, and high-density multi-pin, narrow-pitch electrodes are formed on the surface of the semiconductor device. Therefore, since a large number of active elements are formed immediately below the electrodes, if the contact pressure of the probe with the electrodes during semiconductor element inspection is too high, the electrodes and the active elements immediately below the electrodes may be damaged.

In addition, the method disclosed in Japanese Patent Application Laid-Open No. H5-22-1118 discloses that the hole is mechanically formed by pressing a dent tool against a metal plate as a molding die, so that the hole forming accuracy is poor. There's a problem. In other words, the positioning is limited by the mechanical operation. In addition, variations occur in the way the holes are drilled. As a result, there is a problem that the positions, shapes and sizes of the projections vary.

Furthermore, in the method disclosed in Japanese Patent Application Laid-Open No. 5-212118, no consideration is given to making the contact pressure of each projection an appropriate value. In particular, JP The method disclosed in Japanese Patent Publication No. 2111218 is expected to cause unevenness in the shape of the projections, etc. Pressure is required, and in part, the problem is that the contact pressure becomes excessively large ^).

A first object of the present invention is to provide a connection device having a contact terminal capable of contacting an object to be inspected at multiple points and at a high density, and a method of manufacturing the same.

A second object of the present invention is to provide a connection device having electrical characteristics that can reduce the length of a probe and can handle high frequencies, and a method of manufacturing the same.

A third object of the present invention is to provide a connection device which has high processing accuracy and can be manufactured without requiring a fine assembling operation, and a method of manufacturing the same.

A fourth object of the present invention is to provide a connection device which realizes a contact terminal having stable contact characteristics with a small contact pressure, and a method of manufacturing the same.

Further, a fifth object of the present invention is to provide an inspection device having a connection device having high density, many pins, and excellent electrical characteristics. Disclosure of the invention

In order to achieve the first to third objects, according to the first aspect of the present invention,

A connection device for making electrical contact with an object to be inspected and transmitting and receiving an electric signal, comprising a plurality of contact terminals for making electrical contact with the object to be inspected, and a lead-out wire drawn from each contact terminal. And a first base material that supports the contact terminals and the lead-out wiring,

The contact terminal is obtained by anisotropically etching a crystalline second base material. Projections, and an insulating layer supporting the projections,

The connection device is provided, wherein the projection has a conductive portion at least on a tip side thereof, and the conductive portion is connected to the corresponding lead-out wiring. ,

The projection has a ridge, and is formed in a shape having a cone or a truncated cone at least at a tip end so that the tip has a pointed shape. For example, pyramids, truncated pyramids, and more specifically, square pyramids and truncated square pyramids.

Further, according to a second aspect of the present invention, there is provided a method of manufacturing a connection device for making electrical contact with an object to be inspected and transmitting and receiving an electrical signal, wherein the method includes the steps of: Anisotropically etching the base material to form projections each having a pointed tip, and forming a conductive film and a lead-out wiring on the tip end side for each of the contact terminal projections. And a method for manufacturing the connection device.

In order to achieve the fourth object of the present invention, according to a third aspect of the present invention, in the first aspect, the contact terminal is further formed on a contact terminal portion made of a cantilever. Is provided. A cantilever-shaped insulating film with one end supported at the edge of the hole, a bridge-shaped insulating film with both ends supported at the edge of the hole, and an insulating film supported all around the hole edge A film can be provided as appropriate according to the size of flexibility, the size of rigidity, and the like.

Further, according to a fourth aspect of the present invention, there is provided a connection device having a configuration in which the contact terminal is formed on a surface of an insulating thin film, in addition to the first aspect. Further, according to a fifth aspect of the present invention, the substrate according to the first aspect, further comprising a buffer layer and a substrate, wherein the base material constituting the contact terminal is provided with a buffer layer interposed therebetween. A connection device configured to be fixed to the connection device is provided.

According to a sixth aspect of the present invention, in the second aspect, the step of forming the contact terminal further includes a step of fixing the contact terminal to a substrate via a buffer layer. A method for manufacturing a connection device is provided.

According to a seventh aspect of the present invention, to achieve the fifth object of the present invention, each of the electrodes to be inspected on which a large number of electrodes are arranged is contacted to transmit and receive an electric signal to perform an inspection. A sample support system for supporting an object to be inspected in a displaceable manner, and a connection device according to any one of the third to fifth aspects, wherein a surface of the connection device having a contact terminal is provided with a sample support system. A probe system arranged to face the test object, a drive control system for controlling the displacement drive of the test object on the sample support system, and a tester connected to the probe system for testing. A featured inspection device is provided.

Further, according to the eighth aspect of the present invention, in an inspection apparatus for performing an inspection by sending and receiving an electric signal by contacting each electrode to be inspected on which a large number of electrodes are arranged, the inspection object is supported. And a connection device according to any one of the third to fifth aspects, wherein the connection device is arranged such that a surface having the contact terminal faces an inspection object of the sample support portion. At least one individual probe system, and a tester connected to the individual probe system to perform an inspection, wherein the individual probe system is mounted on a motherboard and connected via the motherboard. Thus, an inspection apparatus characterized by being connected to a tester is provided.

According to the above configuration, the contact terminal can be configured by forming a projection formed by anisotropic etching of the base material and coating the projection with a conductive material. According to the anisotropic etching, for example, a pyramid shape or a truncated pyramid shape having a sharp tip is obtained. In addition, by controlling the etching conditions, a large number of fine and high-density contact terminals can be arranged with high accuracy. Therefore, it is possible to cope with an increase in the density of an object to be measured.

In addition, by using protrusions by anisotropic etching, contact terminals Can be formed as short as the contact terminals can be formed in the etching process (0.001 to 0.5 mm). Thereby, disturbance of the high-speed signal can be reduced.

In addition, by contacting all the surface electrodes of a high-density multi-pin, narrow-pitch semiconductor device with the surface electrodes, a test can be performed in a stable operating state with little voltage fluctuation that can supply power over the entire semiconductor device. As a result, high-speed AC inspection is possible, high-speed operation confirmation of semiconductor devices and detailed observation of output waveforms are possible, and the characteristic margin of semiconductor devices can be grasped, thereby improving the efficiency of semiconductor device design. Good feedback is possible.

In the insulating film, a hole is provided in a portion behind the protrusion at a portion supporting the protrusion. Therefore, the insulating film is easily bent since the rear portion of the protrusion is located at the opening of the hole and is not supported by the second base material. Therefore, when a plurality of projections are provided in the connection device, the insulating film is bent at each projection, and variations in the distance between the electrode and the projection can be absorbed. A cantilever-shaped insulating film with one end supported at the edge of the hole, a prism-shaped insulating film with both ends supported at the edge of the hole, and an insulating film supported all around the hole edge By forming a film on the surface of a cantilever or an insulating film and providing a buffer layer as necessary, variations in the distance between the electrode and the contact terminal can be absorbed. In other words, by appropriately setting the material, thickness, and size of the cantilever or the insulating film, and the elastic modulus of the buffer layer, the contact terminal can be used to probe the electrode and the active electrode immediately below it during probing. It can be easily set to an appropriate value that does not damage the element. Further, even if the electrode to be contacted has some steps, the cantilever or the bending of the insulating film and the elasticity of the buffer layer can make contact with the electrode with a predetermined force.

For changing the electrode pattern, we need to change the etching pattern. It is possible to easily cope with the change of the electrode pattern only by the above.

If silicon is used as the base material, if necessary, a capacitor, resistor or integrated circuit is formed on the surface of the silicon on which the contact terminals are formed by applying the general semiconductor device manufacturing process. The electrical characteristics can be improved and an inspection circuit can be formed, and high-speed AC inspection with less signal disturbance can be performed.

By using a silicon wafer as the base material, if the inspection target is a silicon-based semiconductor device, a connection device with less displacement due to a difference in linear expansion coefficient can be realized.For example, even a wafer state can be easily inspected at a high temperature. It is possible. Therefore, high-speed, high-speed operation tests can be performed with high-density, ultra-high pin counts for semiconductor device electrodes, and even at high temperatures, the contact terminal tip position accuracy is good and the electrode pattern can be easily changed. A possible contact device can be manufactured.

The connection device of the present invention is not limited to a semiconductor element, but can be used as a contact device for opposing electrodes, and can be manufactured even with a narrow pitch and a large number of pins.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is an end view showing a main part of a configuration of a first embodiment of a connection device of the present invention, and FIG. 2 is an end surface showing a main portion of a configuration of a second embodiment of the connection device of the present invention. FIG. 3 is an end view showing a main part of the configuration of a connection device according to a third embodiment of the present invention, and FIG. 4 is a main view showing the configuration of a connection device according to a fourth embodiment of the present invention. It is an end view showing a part,

FIG. 5 (a)-(f) is an end view showing the first stage of the steps of one embodiment of the manufacturing process for forming the connection device of the first embodiment,

Fig. 6 (g)-(i ") shows the latter stage of the manufacturing process shown in Fig. 5, Fig. 6 (g) shows an end view, and Fig. 6 (g ') shows a contact terminal. flat 6 (h) and (i) are end views, FIG. 6 (i ') is a plan view showing a contact terminal, and FIG. 6 (i''') is a perspective view.

FIG. 7 is an end view showing a detailed structure of the configuration of the first embodiment of the connection device of the present invention,

8 (a)-(c) and (d) are end views showing the first stage of the steps of another embodiment of the manufacturing process for forming the connection device of the present invention, and FIG. 8 (c ') is the contact terminal. FIG.

9 (e) and (e ′ ′) are end views showing the latter stage of the process of another embodiment of the manufacturing process for forming the connection device of the present invention, and FIG. 9 (e ′) is the contact terminal. FIG.

FIGS. 10 (a) to (d) are end views showing steps of another embodiment of a manufacturing process for forming a connection device according to the present invention, and FIG. 10 (d ') is a main part of the connection device. It is a perspective view,

Fig. 11 (a)-(d) is an end view showing another embodiment of a manufacturing process for forming a connection device according to the present invention, and Fig. 11 (d ') is a perspective view of a main part of the connection device. And

Fig. 12 (a)-(f ') is an end view showing the first stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention,

FIGS. 13 (g) and (h) are end views showing the interruption of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIGS. 13 (h ') and (h'). ') Is a plan view showing an example of the structure of a contact terminal formed by this method.

FIG. 14 (i) — (I) is an end view showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention,

FIGS. 15 (a) to (d) are end views showing another embodiment of the manufacturing process for forming the connection device according to the present invention. FIGS. 16 (a) and (b) are end views showing the first stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIGS. 16 (b ′) and (b ′). ') Is a plan view of a contact terminal formed by this method, and Figs. 17 (c) and 1 (f) show another embodiment of a manufacturing process for forming a connection device according to the present invention. It is an end view showing the latter stage of the process,

FIGS. 18 (a), (b) and (c) are end views showing the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 18 (b ') is FIG. 18 (b) is a plan view of FIG.

FIG. 19 (a)-(f) is an end view showing the first stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention,

FIGS. 20 (g)-(h) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention;

FIGS. 21 (a) to (d) are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

FIGS. 22 (a) to (d) are end views showing the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 22 (d ') is a pattern formed by this method. FIG.

FIGS. 23 (a), (b) and (c) are end views showing the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIGS. A plan view of a contact terminal formed by this method,

FIGS. 24 (a) and (b) are plan views showing an embodiment of forming a silicon dioxide mask for forming contact terminals of the connection device according to the present invention, and FIG. 25 is a plan view of the present invention. FIG. 2 is a configuration diagram illustrating an outline of a driving unit of a semiconductor device inspection device equipped with a connection device,

FIG. 26 is a perspective view showing a main part of a burn-in semiconductor device inspection device equipped with the connection device of the present invention, FIG. 27 is a cross-sectional view of a semiconductor device inspection apparatus for burn-in, FIG. 28 (A) is a perspective view of a wafer, and FIG. 28 (B) is a perspective view of a semiconductor device;

FIG. 29 is a cross-sectional view of a conventional inspection probe.

FIG. 30 is a plan view of a conventional inspection probe,

FIG. 31 is a perspective view showing a semiconductor device having solder balls on electrodes,

FIG. 32 is a perspective view showing a mounted state of a semiconductor element which has been subjected to solder fusion connection.

FIG. 33 is a cross-sectional view of a main part of a conventional semiconductor device inspection apparatus using a bump formed by plating.

FIG. 34 is a perspective view showing a bump portion formed by plating shown in FIG. 33, and FIGS. 35 (a) to (d) show a connecting device according to the present invention. FIG. 4 is an end view showing an example in which a hole is formed in a size located on the opening surface;

FIGS. 36 (a) to (d) are end views showing another example of a connection device according to the present invention, in which a plurality of protrusions are formed in a hole having a size located at the opening surface thereof. Yes,

FIGS. 37 (a) to (c) are plan views showing examples of how a plurality of projections are arranged in the connection device according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a connection device, a contact terminal, and an inspection device according to the present invention will be described based on examples.

FIG. 1 shows a main part of a first embodiment of the connection device of the present invention. The connection device of the present embodiment includes a terminal array 20 on which a plurality of contact terminals 42 are arranged, a support member 45 supporting the terminal array 20, a support member 45, and a terminal array. A buffer layer 46 mounted between the body 20 and the wiring board 70 on which the support member 45 is mounted, and an extended wiring system for connecting each contact terminal 42 to the wiring of the wiring board 70. It is provided with a unit 7 1.

The terminal array 20 includes a silicon wafer 28 constituting the first base material, silicon dioxide films 26 and 30 constituting the insulating film, contact terminals 42 and a silicon dioxide film 2 6 and a lead wire 40 drawn out from the contact terminal 42. The contact terminal 42 includes a projection 35 serving as a contact terminal and a projection support 43 supporting the projection. As will be described later, the protrusion 35 includes a protrusion 34 formed by anisotropically etching the first substrate silicon wafer, an insulating film 36 covering the protrusion 34, and And a conductive coating 37 provided on the insulating film 36. The projection support portion 43 is composed of a silicon dioxide film 26.

A hole 28 a is provided in the silicon wafer 28 at the rear part of the protrusion 35. The projection support portion 43 is located at the opening of the hole so as to cover a part of the hole 28a. In this embodiment, the projection support portion 43 is fixed to one location around the hole 28a and is formed in a cantilever shape. Therefore, the projection 35 is supported by the projection support 43 in a state where it is located on the opening surface of the hole 28a.

The extension wiring sheet 71 is composed of an insulating film 71a and a drawing extension wiring 72 provided thereon. The extension wiring sheet 71 is smoothly bent outside the silicon wafer 28, one end is fixed to the peripheral portion of the terminal array 20, and the other end is fixed on the wiring board 70. . The extension wiring 72 is electrically connected to the wiring 40 and the electrode 73 provided on the wiring board 70, respectively. The connection is made using, for example, solder 74.

The connection between the periphery of the lead-out wiring 40 and the electrode 73 is made by an insulating film. Four

The connection may be made by wire bonding instead of the extension wiring 72 provided for the drawer provided in the room 71a.

The wiring board 70 is made of, for example, a resin material such as polyimide or glass epoxy, and has, in addition to the electrodes 73 described above, internal wiring 70 a, connection terminals 70 b, and the like. The wiring substrate 70 and the support member 4δ are bonded using, for example, a silicon-based adhesive.

The insulating film 71a is formed of a flexible and preferably heat-resistant resin. In this embodiment, polyimide resin is used. The buffer layer 46 is made of an elastic material such as an elastomer. Specifically, silicon rubber or the like is used. The contact terminals 42 and the lead wires 40 are made of a conductive coating. Details of these will be described later. In FIG. 1, only one contact terminal is shown for the contact terminal 42 and the lead-out wiring 40 for the sake of simplicity, but of course, a plurality of contact terminals are arranged as described later. .

FIG. 2 shows a main part of a second embodiment of the connection device of the present invention. In the connection device shown in FIG. 2, the etching shape of the hole 28a provided in the silicon wafer 28 is different, and the structure of the contact terminal 75 is related to this. Other than the above, the configuration is the same as that of the connection device shown in FIG. That is, in the present embodiment, in the terminal array 20, the hole 28 a is provided so as to penetrate the silicon wafer 28 and the silicon dioxide film 30. Further, in the present embodiment, the projection support portion 43 is fixedly supported on the entire periphery of the opening of the hole 28a. Therefore, the contact terminal 75 is provided so as to close the opening of the hole 28a.

Details of the contact terminal 75 will be described later.

FIG. 3 shows a main part of a third embodiment of the connection device of the present invention. The connection device shown in FIG. 3 has the structure of the hole 28 a and the contact end of the terminal array 20. It has the same configuration as the connection device shown in FIG. 2 except that the structure of the child 76 is different. Details of the contact terminal 76 will be described later.

FIG. 4 shows a main part of a fourth embodiment of the connection device of the present invention. The connecting device shown in FIG. 4 is the same as that shown in FIGS. 1, 2 and 3 except that the structure of the contact terminal 79 provided with an insulating material 78 on the surface of the lead-out wiring 77 is different. It is configured similarly to the connection device. However, an extension wire 72 for drawing provided on the insulating film 71a is connected to a peripheral portion of the drawing wire 77, and the wiring is provided through a via 80 provided on the insulating film 71a. The extension wiring 72 is electrically connected to the electrode 73 provided on the wiring board 70. Details of the contact terminal 79 will be described later. FIG. 23 (b ') shows a main part of a fifth embodiment of the present invention. The basic structure of the connection device shown in FIG. 23 (b ') is the same as that of the third embodiment shown in FIG. The difference is that the projection support portion 43 is supported by two opposing sides of the periphery of the opening of the force hole 26a, and the contact terminal 76a has a bridge structure. Details of the contact terminal 76a of this embodiment will be described later. Next, the structure and manufacturing method of the contact terminal portion of the connection device of the first embodiment will be described.

The connecting device shown in FIG. 7 has a silicon dioxide film 26 as a projecting support portion 43 of a cantilever structure, and is provided with a contact terminal 42. The contact terminal 42 includes a protrusion 34 and a protrusion formed of silicon dioxide 36 covering the protrusion 34, and a conductive film 39 and a plating film 44 attached to the tip of the protrusion. And a conductive coating. Also, this connecting device is configured such that a lead wire 40 is connected to the surface of the silicon dioxide film 26 and one end thereof is connected to a conductive film 39 attached to the tip of the contact terminal 42. , It is formed integrally. Further, the other surface of the silicon wafer 28 having the projection support portion 43 formed on the surface thereof is formed with an elastic layer constituting the buffer layer 46. A silicon rubber as a tomograph and a silicon wafer forming the support member 45 are arranged. In this embodiment, the conductive film 39 has a two-layer structure in which a gold film 39b is applied to a chromium film .39a. The plating film 44 is formed of a rhodium film. The reason why rhodium is used as the plating film 44 is that the hardness of the orifice is higher than that of gold.

FIG. 7 shows typical dimensions of each part of the connection device of this embodiment. As is clear from the example of dimensions shown in FIG. 7, in this embodiment, a quadrangular pyramid-shaped contact terminal having a bottom surface of 30 / m can be realized. In addition, since this quadrangular pyramid is formed by patterning silicon wafers by photolithography, the position and size can be determined with high precision. In addition, since it is formed by anisotropic etching, a sharp shape can be formed. In particular, the tip can be pointed. These features are common to other embodiments. Note that the dimensions and arrangement are merely examples, and the present invention is not limited to these. Further, not only in this embodiment but also in other embodiments, similar dimensions and processing accuracy can be realized.

The reason why the tip of the contact terminal is pointed is as follows.

When the electrode to be measured is aluminum, an oxide film is formed on the surface, and the contact resistance becomes unstable. In order to obtain a stable resistance value of 0.5 Ω or less during contact with such an electrode, the tip of the contact terminal breaks through the oxide film on the electrode surface, Good contact needs to be ensured. For this purpose, for example, when the tips of the contact terminals are semicircular, it is necessary to rub each contact terminal against the electrode with a contact pressure that causes a load of 300 mN or more per pin. On the other hand, the tip of the contact terminal has a diameter of 10π! In the case of a shape with a flat portion in the range of ~ 30 m, each contact terminal must be rubbed against the electrode with a contact pressure that will result in a load of 100 mN or more per pin. On the other hand, in the case of the contact terminal of the connection device of the present embodiment having the shape indicated by the above numerical values, if there is a contact pressure that causes a load of 5 mN or more per pin, the contact terminal is simply Electric current can be supplied with stable contact resistance just by pressing. As a result, since the electrode only needs to be contacted with a low needle pressure, it is possible to prevent the electrode or the element immediately below the electrode from being damaged. Also, the force required to apply pin pressure to all contact terminals can be reduced. As a result, it is possible to reduce the withstand load of the probe driving device in the test device using this connection device, and to reduce the manufacturing cost.

When a load of 100 mN or more can be applied per pin, for example, if the contact terminal is a projection of a truncated pyramid, one side of the flat end of the truncated pyramid is 30 m To make it smaller, it doesn't have to be sharp like a dot. However, for the reasons described above, it is preferable that the area of the tip portion be as small as possible.

Next, a manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIG. 5 and FIG. FIGS. 5 and 6 show, in the order of steps, a manufacturing process for forming a terminal array 20 having cantilever contact terminals in the connection device of the first embodiment of the present invention. Things.

In this embodiment, an S0I substrate having a structure in which silicon dioxide 26 is sandwiched between single-crystal silicon wafers 27 and 28 is used. That is, protrusions 34 are formed on silicon wafer 27 by anisotropic etching, holes 28a are formed on silicon wafer 28 by etching, and silicon dioxide is formed on the opening of hole 28a. The projecting support portion 43 is formed while leaving the film 26 in a cantilever shape, and the contact terminal 42 is formed.

Fig. 5 (a) shows an S0I substrate with a structure in which silicon dioxide 26 having a thickness of about 0.5 to 5m is sandwiched between silicon single crystals 27 and 28. The step of forming silicon dioxide films 29 and 30 on the (100) plane of silicon single crystals 27 and 28 by thermal oxidation will be described. Oxidation of the silicon single crystals 27 and 28 is performed, for example, by subjecting the silicon dioxide films 29 and 30 to 0.5 by thermal oxidation at 100.degree. ^ m is formed.

FIG. 5 (b) shows that the photoresist masks 31 and 32 are formed on the surfaces of the silicon dioxide films 29 and 30 and the silicon dioxide film 29 is etched to form the silicon dioxide film 33. 4 shows a step of forming a mask. The formation of the photoresist masks 31 and 32 is performed as follows. First, OFPR 800 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied as a photoresist on the surfaces of the silicon dioxide films 29 and 30. Next, a square pattern having a side of about 10 to 40 m is exposed at a position where the contact terminal is to be formed, and developed with a developing solution MD3 (manufactured by Tokyo Ohka Kogyo Co., Ltd.). Next, the silicon dioxide film 29 exposed from the photoresist masks 31 and 32 is immersed and etched in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride solution.

In FIG. 5 (c), the photoresist masks 31 and 32 are removed, and the (100) plane of silicon single crystal 27 is anisotropically etched using silicon dioxide film 33 as a mask. A step in the middle of forming a projection 34 having a pointed shape is shown. Etching of the silicon single crystal 27 is performed, for example, by immersion in a mixed solution of lithium hydroxide, isopropanol, and water. After the etching is completed, the photoresist masks 31 and 32 are removed with a stripping solution S502a (manufactured by Tokyo Ohka Kogyo Co., Ltd.).

FIG. 5 (d) shows anisotropic etching to form a projection 34 having a sharp tip, and then forming a silicon dioxide film 36 on the surface of the projection 34 by thermal oxidation. The step of forming the part 36 is shown. Oxidation of the protrusion 34 made of silicon is performed by, for example, thermal oxidation in a jet oxygen. This Thereby, a silicon dioxide film 36 is formed at about 0.5 / zm. FIG. 5 (d ') is a plan view of the projection 35 shown in FIG. 5 (d) when viewed from below.

FIG. 5 (e) shows that a conductive coating 37 is formed on the surface of the silicon dioxide film 36 on the surface of the protrusion 35, and the pattern and the pattern for forming the surface of the protrusion 35 and the wiring are formed. A step of forming a photoresist mask 38 so as to cover the surface of the conductive coating 37 as much as possible will be described. As the conductive coating 37, for example, a chromium having good adhesion to silicon dioxide is applied to a thickness of 0.02 m by a sputtering method or a vapor deposition method, and then gold is applied to a thickness of 0.2 to 0.5 mm. It is sufficient to form a deposited film, or to form a film by depositing 0.2 to 0.5 m of gold after depositing 0.02 m of titanium by sputtering or vapor deposition. .

FIG. 5 (f) shows that the conductive coating 37 is etched with the photoresist mask 38 to form the conductive film 39 of the projection 35 and the wiring 40, and then the photoresist mask 41 is formed. Removing the portion of the silicon dioxide 26 that should be left as an insulating film supporting the protrusions 35 from the other silicon dioxide film 26 as a groove 26 a by etching. Is shown. In this process, OFPR 800 (manufactured by Tokyo Ohka Kogyo) is applied as a photoresist, and OFPR 800 (manufactured by Tokyo Ohka Kogyo) on the surface of silicon dioxide 26 around the projection 35 is transformed into a rectangle. The two sides in the longitudinal direction and the short side perpendicular to this are exposed in a strip shape. That is, an exposure pattern having a shape similar to a U-shape (in this specification, this shape is referred to as a U-shape for convenience of explanation) is formed. Then, a photoresist mask 41 is formed by developing with NMD 3 (manufactured by Tokyo Ohka Kogyo Co., Ltd.). Next, the silicon dioxide film 26 exposed from the photoresist mask 41 is converted into a 1: 7 mixture of hydrofluoric acid and ammonium fluoride. Etch and etch.

FIGS. 6 (g), (h) and (i) show the steps of forming the projection support portion 43 of the cantilever structure step by step. That is, here, the photoresist mask 41 is removed, and the (100) plane of the silicon single crystal 28 is etched from the groove 26a using the remaining silicon dioxide film 26 as a mask. Thereby, the silicon dioxide film 26 is formed, and the conductive film is formed.

A cantilever-shaped projection support that supports the projection 3 5 on its surface

4 3 is obtained. Fig. 6 (g ') is a plan view of (g) viewed from below, Fig. 6 (i') is a plan view of (i) viewed from below, and Fig. 6 '') is (i) FIG. 3 is a perspective view of the device viewed from below.

Here, the photo resist mask 41 is removed using S502a (manufactured by Tokyo Ohka Kogyo Co., Ltd.). Etching of the silicon single crystal 28 is performed, for example, by immersion in a mixed solution of potassium hydroxide and water. Instead of this solution, a mixed solution of potassium hydroxide, isopropanol and water may be used. In this step, a plating film 44 is provided by plating gold or rhodium or the like on the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal with 0.2 to 2 m of gold or rhodium. Can stabilize the electrical contact characteristics

FIG. 7 shows a step of fixing the substrate made of the silicon single crystal 28 and the silicon dioxides 26 and 30 on which the contact terminals 42 are formed, to the support member 45. Here, a silicon substrate is used as the support member 45. The buffer layer 46 is interposed between the surface of the silicon dioxide film 30 and the support member 45 to be integrated. In the present embodiment, for example, a silicon rubber having a thickness of 0.2 to 3 mm and a hardness (JISA) of about 15 to 70 is used as the buffer layer 46. However, the buffer layer 46 is not limited to this. The bonding between the silicon dioxide film 30 and the silicon support member 45 is performed by using a silicon Since the rubber itself has adhesive strength, no special adhesive is required. In addition, you may make it adhere | attach using an adhesive agent.

According to this embodiment, it is possible to easily form a contact terminal having a pitch of about 10 m as a pitch of the electrode pad portion. In addition, the accuracy of the height of the contact terminal can be achieved within ± 2 m. Further, in this embodiment, since the contact terminal is formed in a cantilever shape, its flexibility is increased. Therefore, it absorbs the influence of the unevenness of the electrode of the measurement object.

Next, another manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIG. 8 and FIG. This embodiment is an example using an SOI substrate having a structure in which a plurality of insulating layers are sandwiched between layers. The description of the same steps as those shown in FIGS. 5 and 6 is omitted.

Fig. 8 (a) shows an S0I substrate with a structure in which silicon dioxides 26 and 47 with a thickness of 0.5 to 5 m are sandwiched between silicon single crystals 27, 28 and 48. The process of forming silicon dioxide films 29 and 30 on the (100) plane of silicon single crystals 27 and 48 by thermal oxidation is shown. Oxidation of silicon single crystals 27 and 48 forms silicon dioxide films 29 and 30 to a thickness of about 0.5 m, for example, by thermal oxidation in wet oxygen. Thereafter, the silicon dioxide film 29, the silicon single crystal 27, and the silicon dioxide 26 are subjected to the same steps as those shown in FIGS. 5 (b) to 5 (e) to form the conductive film of the projection 35. 39 and wiring 40 are formed.

FIG. 8 (b) shows a portion of the silicon dioxide 26 that should be left as an insulating film supporting the protrusion 35, and a portion that becomes a groove 26a for separating the silicon dioxide 26 from the other silicon dioxide film 26. An opening is formed by a photoresist mask 41, and the silicon dioxide 26 in that portion is removed by photoetching. FIGS. 8 (c), (d) and 9 (e) show that the photoresist mask 41 is removed and the (100) plane of the silicon single crystal 28 is exposed to the silicon dioxide layer 47. The step of forming a projection support portion 43 having a cantilever structure of a silicon dioxide film 26 having a projection portion 35 on the surface by etching until the etching is completed is shown in a stepwise manner. In addition, FIG. 8 (c ′) is a plan view of (c) viewed from below, FIG. 9 (e ′) is a plan view of (e) viewed from below, and FIG. 9 (e ′ ′) is ( FIG. 3 is a perspective view of e) viewed from below.

In this embodiment, the electrical contact characteristics can be stabilized by depositing gold or rhodium on the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal.

In the present manufacturing method, the presence of the silicon dioxide layer 47 can reliably stop the anisotropic etching of the silicon single crystal 28 at the silicon dioxide layer 47. As a result, there is an advantage that the processing accuracy is improved and the etching process management becomes easier as compared with the manufacturing methods shown in FIGS. 5 and 6.

Next, still another manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIG. The description of the same steps as those shown in FIGS. 5 and 6 will be omitted.

FIG. 10 (a) shows the same steps as the steps from FIG. 5 (a) to (f). After forming the conductive film 39 of the protrusion 35 and the wiring 40, FIG. A process in which the silicon dioxide 26 around the protrusion 35 is removed by etching using a resist mask 41 in a U-shape is shown.

FIGS. 10 (b), (c) and (d) show the hole 28a by removing the photoresist mask 41 and etching the (100) plane of the silicon single crystal 28. And a step of forming a projection support portion 43 having a cantilever structure of the silicon dioxide film 26. You. FIG. 10 (d ') is a perspective view of (d) viewed from below. Etching of the silicon single crystal 28 is performed, for example, by immersion in a mixed solution of ethylenediamine, pyrocatechol and water. Note that a mixture of potassium hydroxide and water may be used instead of this solution. Alternatively, a mixture of potassium hydroxide, isopropanol and water may be used.

Next, another manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIG. The description of the same steps as those shown in FIGS. 5 and 6 will be omitted.

FIG. 11 (a) shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of 1 to LO ^ m is sandwiched between silicon single crystals 27 and 28, and FIG. Using the same process as above, the (100) plane of the silicon single crystal 27 is anisotropically etched using the silicon dioxide film 33 as a mask to form a projection 34 having a substantially pointed tip. The steps will be described. That is, the present embodiment is an example in which a truncated quadrangular pyramid-shaped projection is formed.

FIG. 11 (b) shows that the silicon single crystal 27 is anisotropically etched while the mask of the silicon dioxide film 33 is still attached to the protrusions 34, A step of removing the silicon dioxide film 33 by etching will be described. In this etching, the silicon dioxide film 26 and the silicon dioxide film 30 are also partially or entirely etched at the same time. C FIG. 11 (c) shows the projection 34 and the silicon single crystal 2 8 shows a step of forming silicon dioxide films 49 and 50 on the surface of FIG. The silicon is oxidized by, for example, forming a silicon dioxide film of about 0.5 / m by thermal oxidation in wet oxygen. FIG. 11 (d) shows a step of forming a projection support portion 43 having a cantilever structure. That is, in this step, the (100) plane of the silicon single crystal 28 is etched by the same steps as the steps shown in FIGS. 5 (e) to 6 (i). Forming a hole 28a. As a result, a projection support portion 43 having a cantilever structure of a silicon dioxide film 49 having a projection portion 35 having a substantially pointed shape on the surface is formed. FIG. 11 (d ′) is a perspective view of FIG. 11 (d) as viewed from below.

In this embodiment, the electrical contact characteristics can be stabilized by depositing gold or rhodium on the surface of the conductive film 39 at the tip of the contact terminal.

Note that, in the present manufacturing method, a flat portion of an arbitrary size can be formed at the tip of the protrusion 34 as compared with the manufacturing method of FIG. 5 and FIG. This method is not limited to the substrate configuration shown in FIG. 11, but has a flat portion of an arbitrary size by anisotropically etching a silicon single crystal using a silicon dioxide film as a mask. This is effective in the step of forming the projection.

Next, a manufacturing process for forming the connection device shown in FIG. 2 will be described with reference to FIG. 12, FIG. 13 and FIG.

Fig. 12 (a) shows the SOI substrate 27 with a structure in which silicon dioxide 26 with a thickness of 0.5 to 5 m is sandwiched between single crystal silicon wafers 27 and 51. The steps of forming silicon dioxide films 29 and 30 on the (100) plane and the (110) plane of silicon wafer 51 by thermal oxidation are shown. Oxidation of the silicon wafers 27 and 51 forms, for example, silicon dioxide films 29 and 30 to a thickness of about 0.5 μm by thermal oxidation in dilute oxygen.

FIG. 12 (b) shows that the surface of the silicon dioxide films 29 and 30 is A step of forming the resist masks 31 and 32 and etching the silicon dioxide film 29 will be described.

FIG. 12 (c) shows that the photoresist masks 31 and 32 are removed, and the (100) plane of the silicon wafer 27 is anisotropically etched using the silicon dioxide film 33 as a mask. A step in the process of forming a projection 34 having a sharp pointed end is shown.

FIG. 12 (d) shows anisotropic etching to form a projection 34 having a pointed tip, and then forming a silicon dioxide film 36 on the surface of the projection 34 by thermal oxidation. The step of forming the projection 35 will be described. The projection 34 made of silicon is oxidized by, for example, thermal oxidation in jet oxygen to form a silicon dioxide film 36 of about 0.5 m.

FIG. 12 (e) shows that the photoresist masks 52 and 53 are formed on the surfaces of the silicon dioxide film 36 and the silicon dioxide film 30 on which the projections 35 are formed, and the silicon dioxide film 30 is etched. The following shows the steps performed.

FIG. 12 (f) shows that the photoresist masks 52 and 53 are removed and the silicon dioxide film 30 is used as a mask to make the (110) surface of the silicon wafer 51 a silicon dioxide layer 26. The step of forming a hole 51a by anisotropic etching until the process is described.

As shown in FIG. 12 (f ′), the (110) plane of the silicon wafer 51 is slightly left on the surface of the silicon dioxide layer 26, and the silicon dioxide layer 26 and The projection support portion 43 can be formed by a film made of the silicon wafer 51. In this case, the strength and flexibility of the protruding support portion 43 may be adjusted by the thickness of the silicon wafer 51. Subsequent steps are the same as the steps subsequent to FIG. 12 (f), and a description thereof will not be repeated.

The method described above is not limited to the substrate configuration shown in FIG. The (110) plane of silicon wafer 51 or (100) plane of silicon wafer 28 described below is anisotropically etched in the direction of silicon dioxide layer 26 to obtain an arbitrary thickness. This is effective in the step of forming a film composed of the silicon wafer and the silicon dioxide layer 26.

FIG. 13 (g) shows that a conductive coating 37 is formed on the surface of the silicon dioxide film 36 on the surface of the protrusion 3δ so as to form a pattern for the surface of the protrusion 35 and the wiring. The step of forming a photoresist mask 38 covering the surface of the conductive coating 37 will be described. As the conductive coating 37, for example, a film formed by depositing 0.02 m of chromium and then depositing 0.2 to 0.5 m of gold by a sputtering ring method or a vapor deposition method is formed. Alternatively, a film may be formed by depositing 0.02 m of titanium and then depositing 0.2 to 0.5 zm of gold by sputtering or vapor deposition.

FIG. 13 (h) shows a process of forming the conductive film 39 of the protrusion 35 and the wiring 40 by etching the conductive coating 37 with the photoresist mask 38. FIG. 13 (h ′) and (h ″) are plan views of (h) viewed from below. Here, FIG. 13 (h ') shows that the silicon conductive layer 51 is anisotropically etched to a part of the silicon dioxide layer 26 where the protrusions 35 are formed, and a conductive film 39 is formed. This is an example of forming. (H ′ ′) is an example in which the conductive film 39 is formed so as to cover the entire anisotropically etched portion.

In this example, the silicon dioxide film 26 is supported all around the opening of the hole 51 a provided in the silicon wafer 51, and the opening of the hole 51 a is closed by the silicon dioxide film 26. . For this reason, this example is characterized in that the projection support portion 43 has a lower flexibility but a higher rigidity as compared with the case of the cantilever structure.

After this step, the conductive film 3 having a quadrangular pyramid shape at the tip of the contact terminal was used. The electrical contact characteristics can be stabilized by plating gold or rhodium, etc., on the surface of 9 about 0.2 to 2 m.

FIGS. 14 (i) and (j) show the above-mentioned silicon wafer 51 and silicon dioxide 30 on which a silicon dioxide film 26 having the above-mentioned projections 35 on the surface is formed. A step of sandwiching a buffer layer 46 between a surface of a silicon dioxide film 30 of a substrate and a support member 45 to integrate them will be described. In the embodiment shown in FIG. 14 (j), the buffer layer 46 is also filled in the hole 51a provided in the silicon wafer 51. As the buffer layer 46, for example, a silicon rubber having a thickness of 0.2 to 3 mm and a hardness (JISA) of about 15 to 70 is used. However, the material for the buffer layer is not limited to this. Note that the silicon dioxide film 30 and the support member 45 need not be specially bonded to each other because the silicon rubber 46 itself has an adhesive force. In addition, you may make it adhere using an adhesive agent. In the present embodiment, as in the other embodiments, a silicon substrate is used as the support member 45.

FIG. 14 (k) shows the surface of the silicon dioxide film 51 and silicon dioxide 30 on which the silicon dioxide film 26 having the above-mentioned projections 35 formed on the surface is formed. This is an example in which an insulating film 54 is attached and used.

FIG. 14 (1) shows an example in which the insulating film 54 is sandwiched between the silicon dioxide film 30 and the support member 45, and used integrally. In this embodiment, for example, a polyimide having a thickness of 5 to 20 m is used as the insulating film 54. However, the insulating film is not limited to this. Note that a structure in which a buffer layer is interposed between the insulating film 54 and the support member 45 may be adopted. As described above, by adopting a structure with an elastomer and a silicon substrate or a structure with an insulating film, it is possible to improve the strength of the contact terminal portion and control the elastic modulus.

Next, another manufacturing process for forming the connection device shown in FIG. 2 will be described. This will be described with reference to FIG. The description of the same steps as those shown in FIGS. 12 to 14 will be omitted.

FIG. 15 (a) shows anisotropic etching of the (100) plane of silicon wafer 27 using silicon dioxide film 33 as a mask to form projections 34 having a substantially pointed tip. The following shows the steps performed. As the substrate, an S0I substrate having a structure in which silicon dioxide 26 having a thickness of 1 to 10 m is sandwiched between silicon wafers 27 and 51 made of a silicon single crystal is used. 1 2 Anisotropic etching is performed by the same process as the process from (a) to (c).

FIG. 15 (b) shows that the silicon dioxide film 33 mask is still adhered to the protrusions 34 and the silicon wafer 27 is stopped from being anisotropically etched. A step of removing the silicon dioxide film 33 by etching will be described. In this etching, the silicon dioxide 26 and the silicon dioxide film 30 are also partially or entirely etched at the same time. FIG. 15 (c) shows a step of forming projections 35 by forming silicon dioxide 49 and 50 on the surface of projections 34 and silicon single crystal 51 by thermal oxidation. The silicon is oxidized by, for example, forming a silicon dioxide film of about 0.5 m by thermal oxidation in cut oxygen.

FIG. 15 (d) shows an etching of the (110) surface of the silicon wafer 51 by the same steps as those in FIGS. 12 (e) to 13 (h). Then, a step of forming the hole 51a and forming the conductive film 39 and the wiring 40 on the silicon dioxide film 49 on the surface of the protruding portion 35 having a substantially sharp tip is shown.

After this step, gold or rhodium or the like is applied to the surface of the conductive film 39 at the tip of the contact terminal, so that the electrical contact characteristics can be stabilized. In the present manufacturing method, a flat portion of an arbitrary size can be formed at the tip of the protrusion 34 as compared with the manufacturing method shown in FIGS. 12 to 14. This method is not limited to the substrate configuration shown in FIG. 15, but may be used in a process of forming a projection by anisotropically etching a silicon single crystal using a silicon dioxide film as a mask. It is valid. Further, in this embodiment, the entire opening of the hole 51 a is covered with the silicon dioxide film 26. Therefore, it has the same features as the structure shown in FIG. 13 (h ′) or (h ′ ″). In particular, in this example, since the protrusion 35 has a truncated quadrangular pyramid shape, the area of the tip is larger than that of the quadrangular pyramid shape. Therefore, it can be expected that the high rigidity of the projection support portions 43 will be useful for increasing the contact pressure of the projections.

Next, a manufacturing process for forming the connection device shown in FIG. 3 will be described with reference to FIG. 16 and FIG. The description of the same steps as those shown in FIGS. 12 to 14 will be omitted.

Fig. 16 (a) shows the S01 substrate with a structure in which silicon dioxide 26 with a thickness of 0.5 to 5 m is sandwiched between silicon wafers 27 and 28. The steps of forming silicon dioxide films 29 and 30 on the (100) plane and the (100) plane of the silicon wafer 28 by thermal oxidation are shown. The oxidation of the silicon wafers 27 and 28 forms the silicon dioxide films 29 and 30 to about 0.5 βm by, for example, thermal oxidation in wet oxygen.

FIG. 16 (b) shows a process of forming projections 34 on silicon dioxide film 26, forming holes 28a in silicon wafer 28, and forming a conductive coating on projections 35. Is shown. That is, in this step, a projection 34 having a pointed tip is formed on the silicon dioxide film 26 by the same steps as those shown in FIGS. 12 (b) to (d). , Fig. 12 (e)-Fig. 13 A hole 28a is formed in the silicon wafer 28 by etching the (100) plane of the silicon wafer 28 by a process similar to the process up to (h). The opening of the hole 28 a is covered with the silicon dioxide film 26. Then, a step of forming a conductive film 39 and a lead wire 40 on the projections 34 formed on the silicon dioxide film 26 covering the opening and the silicon dioxide film 26 will be described.

FIG. 16 (b ′) and (b ′ ′) are plan views of (b) viewed from below. Here, FIG. 16 (b ′) shows that the silicon wafer 28 is anisotropically etched to the silicon dioxide layer 26 where the projections 34 are formed, and the conductive film 39 This is an example of forming. FIG. 16 (b ′ ″) shows an example in which a conductive film 39 is formed so as to cover the entire anisotropically etched portion.

After this step, gold or rhodium or the like is attached to the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal for about 0.2 to 2 m, so that electrical contact characteristics can be stably maintained. can do.

In addition, similarly to the above-mentioned steps of FIGS. 14 (i) to (I), as shown in FIGS. 17 (c) to (f), the buffer layer 46 and the support member 45 By using a structure with a silicon substrate or a structure with an insulating film 54, the strength of the contact terminal portion can be improved and the elastic modulus can be controlled. FIG. 18 shows a manufacturing method for forming the silicon dioxide layer 26 supporting the projection 35 of FIG. 16 (b) into a cantilever structure. The description of the same steps as the processes shown in FIGS. 16 and 17 will be omitted. FIG. 18 (a) shows that the silicon dioxide layer 26 on which the projections 35 are formed and the silicon dioxide 26 around the projections 35 are formed by the photoresist masks 55 and 56 as described above. Next, a process of removing the U-shaped portion by etching is shown. OFPR 800 as a photoresist (Tokyo Co., Ltd. is applied, and 0 FPR 800 (Tokyo Ohka Kogyo) on the surface of silicon dioxide 26 around the projections 35 is exposed in a U-shape and developed by NMD 3 (Tokyo Ohka Kogyo). then _c forms a ho Torejisu mask 5 5 by, not covered by the host Torejisu mask 5 5, i.e., a diacid of silicon film 2 6 exposed, of hydrofluoric acid and fluoride Anmoniumu solution 1: 7 Etch by dipping in the mixed solution.

In FIG. 18 (b), the photoresist masks 55 and 56 are removed to form a projection support 43 of a cantilever structure of a silicon dioxide film 26 having a projection 35 on the surface. FIG. FIG. 18 (b ′) is a plan view of FIG. 18 (b) viewed from below. The photoresist masks 55 and 56 are removed using S502a (Tokyo Ohka Kogyo).

In this example, gold or a mouth jam is attached to the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal for about 0.2 to 2 // m to make electrical contact. Characteristics can be stabilized.

FIG. 18 (c) shows the surface of the silicon dioxide film 30 of the silicon wafer 28 and the silicon dioxide 26, 30 substrate on which the projection support portions 43 of the cantilever structure are formed and the silicon dioxide film 30. The step of sandwiching the buffer layer 46 between the substrate 45 and the substrate to integrate them will be described.

Next, a manufacturing process for forming the connection device shown in FIG. 4 will be described with reference to FIG.

Fig. 19 shows a method for forming square pyramid holes by anisotropic etching in a silicon wafer as a base material, and using this silicon wafer as a mold to form the contact end of the square pyramid with a thin film. The manufacturing process is shown in the order of steps.

FIG. 19 (a) shows an SOI substrate having a structure in which silicon dioxide 26 of about 0.5 to 5 m is sandwiched between silicon wafers 27 and 28. The step of forming silicon dioxide films 29 and 30 on the (100) planes of silicon wafers 27 and 28 by thermal oxidation is shown. Oxidation of the silicon wafers 27 and 28 forms the silicon dioxide films 29 and 30 to a thickness of about 0.5 m, for example, by thermal oxidation in dilute oxygen.

FIG. 19 (b) shows a step of forming photoresist masks 31 and 32 on the surfaces of the silicon dioxide films 29 and 30 and etching the silicon dioxide film 30.

FIG. 19 (c) shows that the photoresist masks 31 and 32 are removed and the (100) plane of the silicon wafer 28 is changed to the silicon dioxide layer 26 using the silicon dioxide film 30 as a mask. After forming holes 28a by anisotropic etching to the extent, a process of forming a silicon dioxide film 57 on the surface of the silicon wafer 28 by thermal oxidation will be described. In the oxidation of silicon, for example, the silicon dioxide film 57 is formed to a thickness of about 0.5 m by thermal oxidation in wet oxygen.

FIG. 19 (d) shows that a photoresist mask 58 is formed on the surface of the silicon dioxide film 57, and the silicon dioxide film 26 is etched to form the opening 2.

6B shows a step of forming b.

FIG. 19 (e) shows that the photoresist mask 58 was removed and the silicon dioxide film 26 was used as a mask to make the silicon wafer and the (100) plane 27 anisotropic from the opening 26b. A step of forming an etching hole 59 in the shape of a quadrangular pyramid by etching will be described.

FIG. 19 (f) shows a step of forming a conductive coating 37. That is, in this step, first, the etching hole 59 and the silicon dioxide film 2

A conductive coating 37 is formed on the surfaces of 6, 57 and 30. Thereafter, a photoresist mask 60 is formed on the surface of the conductive coating 37 so as to cover the surface of the etching hole 59 and form a wiring pattern. The conductive coating 37 exposed from the photoresist mask 60 is etched. The conductive coating 37 is formed, for example, by depositing gold in a thickness of 0.2 to 0.5 m by a sputtering method or a vapor deposition method. The conductive coating 37 is formed by depositing nickel on a gold film by a thickness of about 1 to 2 m by a sputtering method or a vapor deposition method. It may be about 40 m.

As the conductive coating 37, a noble metal such as gold or rhodium is applied in a thickness of about 0.1 to 0.1. Sputtering or vapor deposition is applied to a film, and nickel is applied in a thickness of about 1 to 2 m. A film deposited by a vapor deposition method may be used.

FIG. 20 (g) shows that the surface of the photoresist mask 60 and the silicon dioxide film 30 attached to the surface of the conductive coating 37 and the silicon substrate as the support member 45. The process of filling the buffer layer 46 and integrating it is shown. As the buffer layer 46, for example, silicon rubber is used. Further, a material formed by applying a polyimide and curing by heating can be used. Further, a two-layer polyimide film obtained by applying polyimide before heat curing to the lower surface of the thermally cured polyimide was adhered to the surface of the conductive coating 37, and was formed by heat curing. Can be used.

FIG. 20 (h) shows a step of forming the protrusion 35 by etching and removing the silicon dioxide film 31 and the silicon wafer 27, respectively. In this example, unlike the above-described example in which the protrusion 35 is formed of the silicon single crystal protrusion 34, the protrusion 35 is not formed of the silicon single crystal. In this example, the electrical contact characteristics were improved by attaching gold or a mouthpiece to the surface of the conductive coating 37 having a quadrangular pyramid shape at the tip of the contact terminal for about 0.2 to 2 m. Can be stable. Next, another manufacturing process for forming the connection device shown in FIG. 4 will be described. This will be described with reference to FIG. The description of the same steps as those shown in FIGS. 19 and 20 will be omitted.

FIG. 21 (a) shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of about 0.5 to 5 m is sandwiched between silicon wafers 27 and 28 until FIG. By a process similar to the above process, using the silicon dioxide film 26 as a mask, the (100) plane of the silicon wafer 27 is anisotropically etched to form a square pyramid-shaped etching hole 59, A step of forming a silicon dioxide film 61 on the surface of the etching hole 59 of the silicon wafer 27 will be described.

FIG. 21 (b) shows a step of forming a conductive coating 37. First, a base film 37 a and a conductive coating 37 are formed on the surfaces of the silicon dioxide films 61, 26, 57 and 30. Thereafter, a photoresist mask 62 covering the surface of the conductive coating 37 is formed so as to cover the surface of the silicon dioxide film 61 in the etching hole 59 and form a pattern for forming a wiring. Then, the conductive coating 37 and the base film 37a exposed from the photoresist mask 62 are etched. The base film 37a is formed by, for example, applying 0.02 m of chromium by a sputtering method or a vapor deposition method. The conductive coating 37 is formed, for example, by depositing 0.2 to 0.5 m of gold on the base film 37a by a sputtering method or a vapor deposition method. In addition, titanium may be applied to the base film 37a in a thickness of 0.02 m in place of chromium by sputtering or vapor deposition. Further, the conductive coating 37 is formed by forming a nickel film of about 1 to 2 m on a gold film by a sputtering method or a vapor deposition method, and coating Nigel, copper or both on the surface with 2 to 4 m. About 0 m may be plated.

In addition, as the conductive coating 37, a noble metal such as gold or rhodium is applied to a film formed by sputtering or vapor deposition in a thickness of about 0.1 to 0.5 m. A film in which nickel is applied by about 1 to 2 m by a sputtering method or a vapor deposition method may be used.

FIG. 21 (c) shows the photo resist mask 62 and the surface of the silicon dioxide film 30 attached to the surface of the conductive coating 37 and the silicon substrate as the support member 45. During this step, the process of filling the buffer layer 46 and integrating it is shown. As the buffer layer 46, for example, silicon rubber is used. In addition, it is possible to use a material formed by applying a polyimide and heat-curing. A two-layer polyimide obtained by applying the polyimide before the heat curing to the lower surface of the thermoset polyimide is used. A film formed by bonding a film to the surface of the conductive coating 37 and heat-hardening the film can be used.

FIG. 21 (d) shows a step of forming the protrusion 35. That is, first, the silicon dioxide film 31 and the silicon wafer 27 are respectively removed by etching. Thereafter, the silicon dioxide 61 covering the protrusions 35 is removed by etching, and then the base film 37a is removed by etching. In this example, gold or rhodium was applied to the surface of the conductive coating 37 having a quadrangular pyramid shape at the tip of the contact terminal for about 0.2 to 2 m to stabilize the electrical contact characteristics. Can be FIG. 22 shows a method of forming the silicon dioxide layer 26 having the projections 35 of FIG. 20 (h) into a cantilever structure. The description of the same steps as those shown in FIGS. 19 and 20 will be omitted.

FIG. 22 (a) shows a photo resist mask 63 after a silicon dioxide layer 57 is formed by the same steps as those in FIG. 19 (a) to (c). Then, the silicon dioxide film 26 at the position 64 where the protrusion is formed and the silicon dioxide layer 26 around the protrusion are formed into a U-shape 65 by the photoresist mask 63. Figure 3 shows the process of removing by etching. 0 FPR 800 0 0 (Tokyo The silicon dioxide film 26 at the protrusion formation position 64 is formed into a square, and the FDP 800 of the surface of the silicon dioxide film 26 around the protrusion formation position is applied (Tokyo Ohka Kogyo Co., Ltd.). Is exposed in a U-shape and developed by NMD 3 (Tokyo Ohka Kogyo) to form a photoresist mask 63. Next, the silicon dioxide film 26 exposed from the photoresist mask 63 is immersed and etched in a 1: 7 mixture of hydrofluoric acid and ammonium fluoride.

In FIG. 22 (b), the photoresist mask 63 is removed and the (100) plane of the silicon wafer 27 is anisotropically etched using the silicon dioxide film 26 as a mask to form a square pyramid. Simultaneously with the formation of the etching hole 59, the silicon wafer 27 is etched into a U-shape 66, and a conductive coating is formed on the etching surface of the silicon wafer 27 and the surfaces of the silicon dioxide films 26, 57 and 30. 37 shows a step of forming 37. The conductive coating 37 may be formed of the same material as in FIG. 19 (f). The etched surface of the silicon wafer 27 is formed by forming a silicon dioxide film 61 by thermal oxidation in the same manner as in FIG. 21 (a) to form a base film 37a and a conductive coating 37. May be formed.

FIG. 22 (c) shows a pattern for wiring formation which covers the surface of the above-mentioned square pyramid etching hole 59, does not cover the conductive coating 37 of the U-shaped etching surface 66. Thus, a step of forming the photoresist mask 67 covering the surface of the conductive coating 37 and then removing the conductive coating 37 will be described. FIG. 22 (d) shows the relationship between the surface of the photoresist mask 67 and the surface of the silicon dioxide film 30 applied to the surface of the conductive coating 37 and the silicon substrate as the support member 45. A step of removing the silicon dioxide film 29 and the silicon wafer 27 after integrating them with the buffer layer 46 interposed therebetween is shown. FIG. 22 (d ′) is a plan view of (d) viewed from below. FIG. ₂₃ shows a part of the manufacturing process of the fifth embodiment of the connection device of the present invention. _C This embodiment is basically manufactured by the same process as the embodiment shown in FIG. can do. The difference is that, in the example of FIG. 18, the protrusion support portions 43 are formed in a cantilever structure, but in the present embodiment, the protrusion support portions 43 are formed in a bridge structure, that is, a double-supported structure. The point is that it is formed into a structure. Therefore, the difference in the process is that the silicon dioxide film 26 around the projection support 43 is etched in a U-shape or etched in two parallel grooves. It is. Therefore, since the details of the manufacturing process have already been described, including the example of FIG. 18, the description is omitted here.

In this example, the flexibility is smaller than that of the cantilever structure, but the rigidity is larger than that of the cantilever structure. Therefore, this embodiment has an intermediate property between that of the cantilever structure and that of the structure that covers the entire opening of the hole 28a (or 51a).

Note that the embodiment shown in FIGS. 1 to 23 uses a silicon single crystal silicon mask 68 as shown in FIGS. 24 (a) and (b) to form a silicon single crystal. In this example, the (100) plane is anisotropically etched to form a contact terminal having a quadrangular pyramid contact tip. In this case, as shown in FIG. 24 (a), a square mask of a silicon dioxide film for forming the tip of the contact terminal is formed on the (100) plane of the silicon wafer 27 as shown in FIG. Either place the sides at an angle of 45 degrees with the <110> direction or, as shown in Fig. 24 (b), place one side parallel to the <110> direction. It is desirable to place them.

In the examples described so far, silicon wafers are used as the base material for forming the contact terminals. However, the present invention is not limited to this. A crystal that can form a sharp-pointed hole by anisotropic etching If so, another crystal may be used.

Further, anisotropic etching is necessary for the second base material on which the projections are formed, for example, silicon wafer 27. However, the first substrate that is not directly used for forming the protrusions, for example, silicon wafers 28 or 51, does not necessarily need to be anisotropically etched. Normal etching may be used. Therefore, the silicon substrates 28 and 51 as the first base material need not be single crystals. For example, polycrystalline silicon or amorphous silicon may be used.

Furthermore, in the above description, the base material is a convenience silicon wafer, but this is not intended to limit the invention to a wafer manufactured as a wafer. What is necessary is just to be able to form a projection by the above-mentioned process.

In each of the above examples, all of the terminals provided as the contact terminals are connected to the wiring and can be used effectively. However, it is possible to provide a dummy contact terminal to which no wiring is connected and which functions only as a simple projection. That is, the dummy contact terminals can be appropriately arranged as necessary at the same height as the contact terminals or at an appropriately set height. This facilitates the adjustment of the height variation of the contact terminals or the adjustment of the pressing pressure against the contact target, thereby improving the contact characteristics and reliability. In the above-described embodiment, the cantilever-shaped projection support portion 43 has a rectangular shape, but is not limited thereto. For example, the shape may be a trapezoid or a parallelogram.

Further, in each of the above embodiments, the example in which the hole 28a or the hole 51a is provided for each protrusion 35 is shown, but the present invention is not limited to this. That is, one hole 28a or hole 51a may be provided for each of the plurality of protrusions 35. That is, a structure in which one projection supporting portion supports a plurality of projections 35 can be provided. In this case, pull out independently for each protrusion. By providing the lead-out wiring 40, the contact terminal 42 can be formed for each projection 35. Next, those examples will be described. Note that one or more common electrodes may be provided for a plurality of projections supported by one projection support.

Each of the examples shown in FIGS. 35 (a) to (d) is an example in which a silicon wafer 51 is used as a first base material and a silicon wafer 27 is used as a second base material.

In each of these examples, the projection 35 is formed in the same manner as the steps shown in FIGS. 12 (a) to 12 (d). Then, similarly to the steps shown in FIGS. 12 (e) and (f), a hole 51a is opened by anisotropic etching. However, in this example, the holes 51a are provided in such a size that the plurality of protrusions 35 are located on the opening surface. Therefore, the mask is opened to the size. The hole 51 a is formed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 51 may be left as shown in FIG. 12 (f,).

Next, as shown in FIGS. 13 (g) and (h), a conductive film 39 covering the protrusion 35 and a lead wire 40 are provided. Further, the support member 45 is fixed to a silicon substrate as in the example shown in FIG. 14 (i) -1 (1). Since this is the same as FIG. 14 (i)-(1) except for the size of the hole 51a, the description is omitted.

Each of the examples shown in FIGS. 36 (a) to (d) is an example using silicon wafer 28 as the first base material and silicon wafer 27 as the second base material.

In each of these examples, the projection 35 is formed in the same manner as in the steps shown in FIGS. 6 (a) and 6 (b). Then, similarly to the process shown in FIGS. 12 (e) and (ί), a hole 28a is opened by anisotropic etching. However However, in this example, a hole 28a is provided with a size such that the plurality of protrusions 35 are located on the opening surface. Therefore, the mask is opened to the size. The hole 28 a is formed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 28 may be left as shown in FIG. 12 (f ').

Next, as shown in FIGS. 13 (g) and (h), a conductive film 39 covering the protrusion 35 and a lead wire 40 are provided. Further, as in the example shown in FIG. 17 (c)-(f), it is fixed to the silicon substrate which is the support member 45. Since this is the same as FIG. 17 (c)-(f) except for the size of the hole 28a, the description is omitted.

Next, some examples of how the protrusions 35 are arranged along the surface of the first base material will be described. In the example shown in FIG. 37 (a), the arrangement of the projections 35 of the contact terminals is made to correspond to each chip to be measured. That is, a plurality of protrusions 35 are arranged for each block 201 assumed on the silicon wafer 28 in correspondence with a chip to be measured. In the example shown in Fig. 37 (b), the number of chips to be measured (two in this example is shown) and the number of blocks 201 assumed on silicon wafer 28 are shown. A plurality of protrusions 35 are arranged. In the example shown in FIG. 37 (c), a row of blocks is assumed on a silicon wafer 28, and a plurality of protrusions are arranged for each block. Next, specific examples of use of the contact device described in each of the above embodiments will be described. An example of use is a semiconductor inspection device. Further, the present invention can be applied to an inspection apparatus for a TFT type liquid crystal display.

FIG. 25 is an explanatory view showing a main part of an inspection apparatus which is an embodiment using the connection device of the present invention.

In this embodiment, the inspection apparatus is a wafer processing device in the manufacture of semiconductor devices. It is configured as a rover. This inspection apparatus is composed of a sample support system 120 that supports the test object, a probe system 100 that contacts the test object to transmit and receive electrical signals, and an operation of the sample support system 120. And a tester 170 that performs measurement. It should be noted that the semiconductor device to be inspected is the semiconductor device 1. On the surface of the semiconductor wafer 1, a plurality of electrodes 1a are formed as external contact electrodes.

The sample support system 120 includes a substantially horizontally provided sample stage 122 on which the semiconductor wafer 1 is detachably mounted, and a vertically arranged elevating shaft supporting the sample stage 122. It comprises an elevating drive unit 125 that drives the elevating shaft 124 up and down, and an XY stage 127 that supports the elevating drive unit 125. The X—Y stage 127 is fixed on the housing 126. The elevating drive unit 125 includes, for example, a stepping motor. The horizontal and vertical positioning of the sample stage 122 is performed by combining the movement of the X-Y stage 127 in the horizontal plane with the vertical movement of the elevation drive unit 125. . Further, the sample stage 122 is provided with a rotating mechanism (not shown) so that the sample stage 122 can be rotated and displaced in a horizontal plane.

Above the sample stage 122, a probe system 100 is arranged. That is, the connection device 100a and the wiring board 70 are provided in a posture facing the sample table 122 in parallel. In this connection device 100a, a terminal array 20 having a plurality of contact terminals 42 is provided at a position opposing an object to be inspected. As the terminal array 20, the one shown in FIG. 1 described above is used. That is, the terminal array 20 is constituted by a silicon substrate 28, a group of contact terminals 42 supported by the silicon substrate 28, a buffer layer 46 and a support member 45 provided physically. Each contact terminal 42 is connected via an extension wiring 72 provided on an extension wiring sheet # 1 of the connection device 100a, Through the lower electrode 73 of the wiring board 70 and the internal wiring 70 a, it is connected to the connection terminal 70 b provided on the wiring board 70. In this embodiment, the connection terminal 70b is constituted by a coaxial connector. The tester 1Ί0 is connected via a cable 171, which is connected to the connection terminal 70b.

The connection device used here is not limited to the one having the structure shown in FIG. For example, the structure shown in FIG. 2, FIG. 3, FIG. 4, etc. can be used.

The drive control system 150 is connected to the tester 170 via a cable 170. The drive control system 150 sends a control signal to the actuator of each drive unit of the sample support system 120 to control its operation. In other words, the drive control system 150 has a computer inside, and operates the sample support system 120 in accordance with the test operation progress information of the tester 170 transmitted via the cable 170. Control. Further, the drive control system 150 includes an operation unit 151, and receives input of various instructions related to drive control, for example, receives an instruction of a manual operation.

Hereinafter, the operation of the inspection device of the present embodiment will be described. The semiconductor wafer 1 is fixed on the sample table 122, and the electrode 1a formed on the semiconductor wafer 1 is connected to the connection device 100a by using the XY stage 127 and the rotating mechanism. Adjust so that it can be positioned directly below the contact terminal 42 formed on the substrate. After that, the drive control system 150 operates the lifting / lowering drive unit 125 to raise the sample table 122 to a predetermined height, so that the tip of each of the plurality of contact terminals 42 is aimed at. Each of the plurality of electrodes 1a of the semiconductor element is brought into contact with a predetermined pressure. Up to this point, the operation is performed by the drive control system 150 in accordance with the operation instruction from the operation unit 151. In addition, these adjustments, such as positioning, may be automatically performed. For example, the reference position on semiconductor wafer 1 The mark can be attached in advance and read by a reading device to set the origin of the coordinates. In this case, the position of the electrode is known in the drive control system 150 by receiving design data in advance.

In this state, the operation is performed between the semiconductor element formed on the semiconductor wafer 1 and the tester 170 via the cable 171, the wiring board 70, the extension wiring sheet 71, and the contact terminals 42. Transmission and reception of power, an operation test signal, and the like are performed to determine whether or not the semiconductor device has operating characteristics. The above-described series of test operations is performed for each of the plurality of semiconductor elements formed on the semiconductor wafer 1 to determine whether or not the operation characteristics are acceptable.

Next, an example of an inspection device in a binning step of a semiconductor device which is an embodiment using the connection device of the present invention will be described.

FIG. 26 is a perspective view showing an essential part of an inspection device in a burn-in process of a semiconductor device which is an embodiment using the connection device of the present invention, and FIG. 27 is a semiconductor device inspection for burn-in. It is sectional drawing of an apparatus.

The present embodiment is configured as a wafer prober for applying a characteristic test of a semiconductor element by applying an electric and temperature stress to a semiconductor element in a wafer state at a high temperature.

In the present embodiment, the characteristic inspection can be performed while a plurality of wafers 1 are put in a thermostat (not shown) at a time.

That is, as shown in FIG. 27, this embodiment comprises a mother board 18 1 vertically attached to a support 190 placed in a thermostat (not shown), and That is, a plurality of the support members 190 are attached to the mother board 18 1 in parallel with the support members 190. Of the individual probe system 180. The mother board 18 1 communicates with the connector 18 3 provided for each individual probe system 180 and the connector 18 3 via the mother board 18 1. Cable 18 2. Although not shown in the present embodiment, the cable 182 is connected to a tester similar to the tester 170 shown in FIG.

An individual probe system 180 is provided for each inspection object. The individual probe system 180 includes a connection device 100 a described above, a wiring board 70 to which the connection device is fixed, and a wafer support substrate 18 that supports the semiconductor wafer 1 as an object to be inspected. 5, a support board 184 on which the wafer support substrate 185 is mounted, and an individual probe system itself is mounted on the motherboard 181, and the connection device 100a is connected to the semiconductor wafer 1 And a holding substrate 186 for making contact with the substrate.

Each part above the wafer support substrate 185 has the structure shown in FIG. That is, the wafer support substrate 185 is formed of, for example, a metal plate, and has a concave portion 185 a for detachably housing the semiconductor wafer 1 and a knock pin 187 for positioning.

As described above, the connection device 100a includes the terminal array body 20 provided with the contact terminals 42, the buffer layer 46 and the support member 45, and the extension wiring sheet 71. Be composed. The connection device 100a is mounted on a wiring board 70, and wiring drawn from each contact terminal 42 is connected to a connector terminal 70c via a wiring 70d. The connector terminal 70c is adapted to fit with the connector 183. In this example, the connection device 100a shown in FIG. 1 is used, but the connection device 100a is not limited to this. For example, FIG. 2, FIG. 3, Ru can be used as shown in FIG. 4, etc. ₀

Above the connection device 100a, a holding substrate 186 is mounted. The holding substrate 186 is formed in a channel shape, and the wiring substrate 70 is accommodated in the channel 186a. In addition, the circumference of The edge is provided with a hole 188 to be fitted with the knock pin 187. _c Next, the measurement operation of this embodiment will be described.

The semiconductor substrate 1 is fixed to the concave portion 180a of the substrate support substrate 85, and the respective electrodes formed on the semiconductor substrate 1 are connected to the connection device 100a using the knock pins 187. Is positioned immediately below each of the contact terminals 42 formed at a predetermined position, and the tip of each of the plurality of contact terminals 42 is brought into contact with each of the target electrodes of the plurality of electrodes of the semiconductor element at a predetermined pressure. In this state, cable 18 2, mother board 18 1, connector 18 3, wiring board Ί 0, drawer not shown in Fig. 26 provided on extension wiring sheet 7 1 Transfer of operating power and operation test signals between the semiconductor element formed on the semiconductor wafer 1 and the tester via the extension wiring 72 2 (see FIG. 1) and the contact terminals 42 To determine whether or not the operating characteristics of the semiconductor element are applicable. The above series of operations is performed by the semiconductor wafer mounted on the wafer support substrate 185 fixed to the motherboard 181 fixed to the support 190 set in a thermostat (not shown). This is performed for each of the steps 1 to determine whether or not the operation characteristics are acceptable.

In the case where the contact terminals of the connection device are brought into contact with the electrodes, the contact terminals and the electrodes are connected in a one-to-one correspondence in the above-described embodiment. That is, a plurality of contact terminals may be brought into contact with one electrode. Thereby, more reliable contact can be secured.

In each of the above embodiments, the lead-out wiring 40 and the lead-out extension wiring 72 have been treated as ordinary single-line wiring, but the present invention is not limited to this. By providing a ground layer, each of the lead-out wiring 40 and the lead-out extension wiring 72 may be configured as a microstrip line. As a result, it is possible to perform an AC inspection in a high frequency range, for example, up to several GHz. According to the embodiment described above, projections having uniform height and shape can be formed by anisotropic etching, and the contact terminals can be formed by the projections. Further, a hole is formed at the rear of the projection to increase the flexibility of the projection support portion, so that good contact with the inspection target can be achieved. Further, the contact terminals can be formed with high density and high precision by photolithographic technology. In addition, a large number of contact terminals can be formed collectively with high positional accuracy.

Although each of the embodiments described above uses a silicon wafer, the present invention is not limited to this. Other crystalline materials can also be used. In each of the embodiments shown in FIGS. 1, 2, 3, and 4, the connection device is mounted on the wiring board via the support member 45, but without the support member. Alternatively, the connection device may be fixed to the wiring board via a buffer layer.

In the above embodiment, the cantilever-shaped contact terminal is constituted by the rectangular projection support portion 43, but the planar shape of the projection support portion is not limited to a rectangle. For example, it may be trapezoidal. Also, it can be formed in a U-shape. Industrial applicability

ADVANTAGE OF THE INVENTION According to this invention, the number of contact terminals of the connection device can be increased at multiple points and the density can be increased. Since the connection terminals can be formed at once, there is an effect that the assemblability of the connection device is greatly improved.

Further, according to the present invention, the length of the probe can be reduced, and it is possible to cope with high frequencies.

Furthermore, the variation in the height of the connection terminals is caused by the formation of a quadrangular pyramid surrounded by the (111) plane by anisotropic etching of the (100) plane of the silicon. By doing so, it is possible to bring the photoresist mask pattern to a level close to the dimensional accuracy, as in the case of the lateral variation. In addition, by using the SOI substrate, the silicon dioxide layer serves as a stop during anisotropic etching, so that anisotropic etching process control is easy. This has the effect of significantly improving the positional accuracy of the tip of the connection terminal. In addition, since it is formed by a thin film process, it can be manufactured with high processing accuracy and without the need for fine assembly work.

Further, in the connection device according to the present invention, in which the connection terminal is brought into contact with the facing electrode by the elastic force of the buffer layer or the cantilever structure, the dispersion of the distance between the contact terminal and the electrode is absorbed. However, even pressure can be applied to each contact terminal with a small load. This ensures that all pins are in contact. Also, it is possible to prevent an excessive load from being applied to the inspection object.

In addition, the silicon and silicon dioxide layers have heat resistance and can be burned in (up to 200 ° C). In addition, applying the LSI manufacturing process to the silicon single crystal substrate, which is a component of the contact device, improves the high-frequency characteristics by forming a capacitor or resistor near the contact terminal and matching the impedance. be able to. Also, by forming an active element near the contact terminal and having an inspection function, the load on the tester for inspection can be reduced.

Claims

The scope of the claims

1. A connection device for transmitting and receiving an electric signal by making electrical contact with the object to be inspected.

A plurality of contact terminals for making electrical contact with the object to be inspected, lead wires drawn from each contact terminal, and a first base material supporting the contact terminals and the lead wires,

The contact terminal includes: a protrusion obtained by anisotropically etching a crystalline second base material; and a protrusion supporter that supports the protrusion.

The connection device, wherein the protrusion has a conductive portion at least on a tip side thereof, and the conductive portion is connected to the corresponding lead-out wiring.

2. The connection device according to claim 1, wherein the first base material has a hole in a rear portion of the protrusion, and the protrusion support portion has at least a part of an opening of the hole. A connection device which is arranged so as to cover an occupied portion, and which supports the protrusion at this portion.

3. The connection device according to claim 2, wherein the protrusion support portion has a portion formed in a cantilever shape, one end of which is supported at an edge of the hole.

4. The connection device according to claim 2, wherein the protrusion support portion has a portion formed in a shape of a prism supported at both ends by an edge of the hole.

5. The connection device according to claim 2, wherein the projection support portion is supported around the entire periphery of the hole, and has a shape covering the opening of the hole.

6. The connection device according to claim 2, wherein the lead-out wiring is A connection device provided integrally with the conductive portion at the tip of the projection.

7. The connection device according to claim 1, wherein the first and second base materials include an insulating layer sandwiched between silicon layers, (silicon-one insulating layer-silicon). The projection support portion is configured to include the insulating layer, and is configured to include at least the second base material. Is a single crystal connection device.

8. The connection device according to claim 1, further comprising a buffer layer and a support member, wherein the substrate on which the contact terminals are formed is fixed to the support member with the buffer layer interposed therebetween.

9. The connection device according to claim 8, further comprising a wiring board on which the support member is mounted, wherein the lead-out wiring is connected to a wiring of the wiring board.

10. The connection device according to claim 1, further comprising a buffer layer and a wiring board, wherein the board on which the contact terminals are formed is fixed to the wiring board with a buffer layer interposed therebetween. A connection device that connects the wiring for drawing and the wiring on the wiring board.

1 1. A method of manufacturing a connection device for transmitting and receiving an electric signal in electrical contact with a test object,

The insulating film is composed of a first base material and a second base material which are laminated with the insulating film interposed therebetween, and at least a plurality of portions of the second base material of the substrate in which at least the second base material is crystalline. Forming a mask covering the respective portions, anisotropically etching the second substrate,

Removing the mask to form a projection at a location covered by the mask;

A conductive coating is formed on the tip of the projection to cover the tip, and is connected to the conductive coating, and is arranged along the first base material for drawing. The process of forming wiring

A method for manufacturing a connection device, comprising:

12. The method for manufacturing a connection device according to claim 11, wherein an oxide film is formed on the protrusion, and then a conductive coating is formed on the tip to cover the tip. A method for manufacturing a connection device, comprising forming wiring for use.

13. The method for manufacturing a connection device according to claim 11 or 12, wherein a portion of the first base material behind the protrusion is removed by etching, so that the first base material is removed. A method for manufacturing a connection device, further comprising a step of forming a hole.

14. The method for manufacturing a connection device according to claim 13, wherein the hole is formed by forming a groove-shaped mask hole reaching the first base material in the insulating film, and forming a groove-shaped mask hole from the mask hole. A method for manufacturing a connection device, which is performed by etching one of the base materials.

15. The method for manufacturing a connection device according to claim 14, wherein a single crystal is used as the first base material, and the etching of the first base material in forming the holes is performed by anisotropic etching. A method for manufacturing a connection device.

16. The method for manufacturing a connection device according to claim 15, wherein a hole having a U-shaped pattern is formed as the groove-shaped mask hole provided in the insulating film, and the opening of the hole is formed. A method for manufacturing a connection device, wherein an insulating film positioned in a cantilever shape is formed on a substrate.

17. The method for manufacturing a connection device according to claim 15, wherein two parallel grooves are formed as groove-shaped mask holes provided in the insulating film, and a bridge is formed in an opening of the groove. A method for manufacturing a connection device, comprising forming an insulating film positioned in a shape.

18. The method for manufacturing a connection device according to claim 14, wherein a surface of the first base member opposite to the second base member is provided with a third base member via a second insulating film. A method for manufacturing a connection device, wherein a hole is formed by etching a first base material from a mask hole until the second base film is reached, using a substrate on which a material is laminated.

19. The method for manufacturing a connection device according to claim 13, wherein the hole is formed by etching the first base material from a surface opposite to a surface having a second base material. A method for manufacturing a connection device.

20. The method of manufacturing a connection device according to claim 19, wherein the hole is formed until the hole reaches an insulating film between the first base material and the second base material. Manufacturing method of connection device.

21. The method for manufacturing a connection device according to claim 19, wherein the hole is formed by etching before reaching an insulating film between the first base material and the second base material. A method for manufacturing a connection device, in which the first substrate is stopped until the first base material remains.

22. The method for manufacturing a connection device according to claim 20, wherein the insulating film covering the hole is etched and cut in a U-shaped pattern so as to surround the projection. A method for manufacturing a connection device.

23. The method for manufacturing a connection device according to claim 11 or 12, wherein the substrate on which the contact terminals are formed is fixed to a support member with a buffer layer interposed therebetween. Production method.

24. The method for manufacturing a connection device according to claim 23, further comprising: fixing the support member to a wiring board; and connecting the lead-out wiring and the wiring to the wiring board. A method for manufacturing a connection device.

2 5. A method of manufacturing a connection device for transmitting and receiving an electric signal in electrical contact with an object to be inspected.

The first substrate, which is composed of an insulating film and a first substrate and a second substrate laminated with the insulating film interposed therebetween, and at least the second substrate is crystalline, Etching from the side opposite to the surface of the second base material to form the first hole;

A mask hole reaching the second base material is provided in a part of the insulating film exposed in the first hole, and the second base material is anisotropically etched through the mask hole. Forming a pyramidal second hole;

A conductive coating is formed on the inner surface of the second pyramid-shaped hole, and the inner surface of the first hole and the outer surface of the hole are connected to the conductive coating to draw out to the outside. Forming wiring for;

Removing the second substrate by etching.

A method for manufacturing a connection device, comprising:

26. The method of manufacturing a connection device according to claim 25, wherein the step of forming the conductive coating and the step of forming the lead-out wiring comprises: forming the contact pyramid for forming a contact terminal protrusion. A method of manufacturing a connection device, comprising: removing a portion that covers an inner surface of a second hole having a shape, leaving a portion for forming a lead-out wiring, and removing another portion by etching. .

27. The method for manufacturing a connection device according to claim 26, wherein the step of forming the conductive coating includes forming a base film, forming a conductive coating thereon, and forming the conductive coating thereon. In the second base material removing step, after removing the second base material, the underlying film is removed, and further, a portion of the conductive coating covering the contact terminal protrusion and a lead-out wiring are formed. A method for manufacturing a connection device, characterized in that a part is left and another part is removed by etching.

28. The method for manufacturing a connection device according to claim 25, wherein a crystalline material is used as the first base material, and a mask is formed so as to surround a portion of the second base material where the projection is formed. A method for manufacturing a connection device, comprising: performing anisotropic etching on a first base material while covering the first base material.

29. The method of manufacturing a connection device according to claim 25, wherein A method for manufacturing a connection device, wherein the edge film is covered with a mask having a U-shaped pattern so as to surround a portion where the projection of the second base material is formed, and cut by etching.

30. The method for manufacturing a connection device according to claim 25, wherein the substrate on which the contact terminals are formed is fixed to a support member with a buffer layer interposed therebetween.

31. The method for manufacturing a connection device according to claim 30, further comprising: fixing the support member to a wiring board; and connecting the lead-out wiring and the wiring to the wiring board. A method for manufacturing a connection device.

32. The method for manufacturing a connection device according to claim 11, 19, or 25, wherein the first and second base materials are each formed of a single insulating layer formed of a silicon layer. A connection composed of a silicon layer of an SOI (Silicon On Insulator) substrate having a structure of (silicon one insulating layer—silicon) interposed therebetween, and at least the second base material is a single crystal. Device manufacturing method.

33. In the method for manufacturing a connection device according to claim 11, claim 19, or claim 25, a plating film is formed on at least one of the conductive coating and the lead-out wiring. A method for manufacturing a connection device, further comprising a step.

34. The method for manufacturing a connection device according to claim 33, wherein the plating film is formed of a material having a higher hardness than the conductive coating.

3 5. In an inspection device that performs inspection by sending and receiving electrical signals by contacting each electrode to be inspected where a large number of electrodes are arranged,

A sample support system that displaceably supports the inspection object,

A probe system comprising the connection device according to claim 9 or 10, wherein a surface of the connection device with a contact terminal is arranged so as to face an inspection target of the sample support system; A drive control system that controls the displacement drive of the test target of the sample support system; and a tester that is connected to the probe system to perform the test.

An inspection apparatus comprising:

36. In an inspection device that conducts inspection by sending and receiving electrical signals by contacting each electrode of the inspection target where a large number of electrodes are arranged,

A sample supporter for supporting an object to be inspected, and a connection device according to claim 9 or 10, wherein the surface of the connection device having a contact terminal is an object to be inspected by the sample supporter. At least one individual probe system arranged opposite the object,

A tester connected to the individual probe system for performing an inspection, wherein the individual probe system is mounted on a motherboard and connected to a tester via the motherboard. Inspection equipment.

37. The connection device according to claim 5, wherein each projection support portion has a plurality of projection portions.

38. The method for manufacturing a connection device according to claim 13, wherein the hole is formed by removing a rear portion of a range including a plurality of protrusions of the first base material by etching. The manufacturing method of the connecting device.