WO1995009444A1 - Agencement de diode electroluminescente avec une puissance d'emission amelioree - Google Patents

Agencement de diode electroluminescente avec une puissance d'emission amelioree Download PDF

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Publication number
WO1995009444A1
WO1995009444A1 PCT/US1994/010781 US9410781W WO9509444A1 WO 1995009444 A1 WO1995009444 A1 WO 1995009444A1 US 9410781 W US9410781 W US 9410781W WO 9509444 A1 WO9509444 A1 WO 9509444A1
Authority
WO
WIPO (PCT)
Prior art keywords
diode assembly
cathode lead
distal end
cross
section
Prior art date
Application number
PCT/US1994/010781
Other languages
English (en)
Other versions
WO1995009444B1 (fr
Inventor
Herbert J. Moore
Original Assignee
Universal Electronics Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universal Electronics Inc. filed Critical Universal Electronics Inc.
Priority to AU78415/94A priority Critical patent/AU7841594A/en
Publication of WO1995009444A1 publication Critical patent/WO1995009444A1/fr
Publication of WO1995009444B1 publication Critical patent/WO1995009444B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting diode (LED) assembly which is designed for use in a remote control and which has enhanced power output. More specifically, the LED assembly includes a large cross section cathode lead on the end of which is mounted an light emitting diode chip.
  • the cathode provides both electrical conduction and heat conduction for dissipating heat from the chip, i.e., it acts as a heat sink.
  • IR infrared
  • LEDs infrared light emitting diodes
  • lenses and reflectors have been proposed, but the most viable technique available is to increase the infrared radiation from the light emitting diode. This can be achieved most easily by increasing the forward bias current through the diode.
  • diode forward current increases the diode chip dissipation also increases and it begins to heat up. Heating of the diode chip immediately causes the IR output to decrease and if allowed to continue, will eventually destroy the diode. If the heat can be removed from the chip at a fast enough rate, a stable operating point can be reached where high IR power output is achieved and the diode chip is not over-stressed.
  • none of the prior art patents cited above disclose a light emitting diode assembly for use in a remote control where a light emitting diode chip is provided with a heat sink for conducting heat away from the light emitting diode chip thereby to enhance the power output and life of the diode chip. Furthermore, none of the prior art patents cited above disclose a light emitting diode assembly which includes a cathode lead having significant mass and cross-section and which mounts at the end thereof a light emitting diode chip with the cathode lead having significant mass and cross-section thereby to provide a heat sink mass for the diode chip.
  • a light emitting diode assembly having enhanced power output.
  • the diode assembly comprises: a non-electrically conductive base; an elongate cathode lead having a proximal portion, a distal portion and a distal end, the proximal portion having a first cross-section and the distal portion having a second cross section; a light emitting diode chip mounted on the distal end of the cathode lead; an anode lead having a cross-section less than the cross-section of the cathode lead; and, a bond wire connecting the anode lead to the LED diode chip.
  • the proximal portion of the cathode lead and the anode lead are mounted in the base.
  • FIG. 1 is a perspective view of a remote control having one or more light emitting diodes constructed according to the teachings of the present invention.
  • FIG. 2 is an enlarged perspective view of a light emitting diode constructed according to the teachings of the present invention.
  • FIG. 3 is a side elevational view of the diode shown in FIG. 2 and is taken along line 3-3 of FIG. 2.
  • FIG. 4 is a side elevational view of the light emitting diode shown in FIG. 3 and is taken along line 4-4 of FIG. 3.
  • FIG. 5 is a top plan view of the light emitting diode of the present invention and is taken along line 5-5 of FIG. 3.
  • a remote control 10 which can be of the type disclosed in U.S. Patent No. 4,959,810, the disclosure of which is incorporated herein by reference.
  • the remote control 10 includes a key pad 12 having a plurality of keys thereon for operating the remote control 10.
  • the remote control 10 is generally rectangular in shape and has a window 14 at one end 16. As shown, three light emitting diodes 21, 22 and 23 are mounted in the window 14.
  • the diode assembly 30 includes a non-electrically conductive base 32 mounting a cathode lead 34 and an anode lead 36.
  • the cathode lead 34 has a proximal portion 38 with a first, generally rectangular cross section and a distal portion 40 with a second, varying and larger, generally rectangular cross section.
  • the distal portion 40 flares or tapers outwardly to an outer distal end 42 having a cavity 44 formed therein.
  • the cavity 44 has a smooth reflective surface and has a parabolic shape for reflecting infrared (IR) light in a wide area.
  • a light emitting diode chip 46 is mounted in the cavity 44 as shown in FIG. 1.
  • the anode lead 36 also has a generally square cross section which is much smaller in area than the cross section of the cathode lead 34 and a distal end 48 thereof is connected by a bond wire 50 to the chip 46.
  • the proximal portion 38 of the cathode lead 34 has, in cross section, a length of 2.0 mm and a width of 1.0 mm and the distal portion 40 tapers to the distal end 42 which has, in cross section, a length of 2.0 mm and a width of 2.7 mm.
  • the overall length of the cathode lead 34 is approximately 30 mm.
  • the cathode lead 34 is made of plated copper and, with the above dimensions, has a mass of approximately 5.6 grams. Typically the copper used has a mass of 8.96 gr/cm 3 .
  • a transparent or translucent globe-shaped or bulb-shaped cover or envelope 52 is mounted on the base 32 over the distal ends 42 and 48 of the cathode and anode leads 34 and 36, respectively.
  • the cover 52 includes a generally cylindrical portion 54 which extends upwardly to a top, generally semi-spherical portion 56.
  • the light emitting diode assembly 30 of the present invention has a number of advantages, some of which have been described above and others of which are inherent in the invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La commande à distance décrite ici comprend un agencement de diode électroluminescente (30) ayant une puissance d'émission augmentée. L'agencement de diode (30) comporte: une base non conductrice d'électricité (32); un conducteur cathodique allongé (34) ayant une portion proximale (38), une portion distale (40) et une extrémité distale (42), la portion proximale (38) ayant une première section transversale et la portion distale (40) ayant une seconde section transversale; une puce à diode électroluminescente (46) montée sur l'extrémité distale (42) du conducteur cathodique (34); un conducteur anodique (36) ayant une section transversale inférieure à la section transversale du conducteur cathodique (34); et un fil métallique de liaison (50) connectant le conducteur anodique (36) à la puce à diode électroluminescente (46). La portion proximale (38) du conducteur cathodique (34) et celle du conducteur anodique (36) sont montées dans la base (32).
PCT/US1994/010781 1993-09-30 1994-09-23 Agencement de diode electroluminescente avec une puissance d'emission amelioree WO1995009444A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU78415/94A AU7841594A (en) 1993-09-30 1994-09-23 Led assembly with enhanced power output

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12985693A 1993-09-30 1993-09-30
US08/129,856 1993-09-30

Publications (2)

Publication Number Publication Date
WO1995009444A1 true WO1995009444A1 (fr) 1995-04-06
WO1995009444B1 WO1995009444B1 (fr) 1995-04-20

Family

ID=22441935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1994/010781 WO1995009444A1 (fr) 1993-09-30 1994-09-23 Agencement de diode electroluminescente avec une puissance d'emission amelioree

Country Status (2)

Country Link
AU (1) AU7841594A (fr)
WO (1) WO1995009444A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1139439A1 (fr) * 2000-03-31 2001-10-04 Relume Corporation DEL avec dissipateur thermique intégré
US6365920B1 (en) 1997-03-18 2002-04-02 Korvet Lights Luminescent diode
EP1469513A2 (fr) * 2003-04-14 2004-10-20 Integral Technologies, Inc. Dispositif de traitement thermique ou dissipateur de chaleur à faible coût fabriqué à partir de matériaux conducteurs à base de résine
JP2005079578A (ja) * 2003-08-28 2005-03-24 Agilent Technol Inc 熱伝導率を向上させた発光デバイス・アセンブリ、それを含むシステム及び熱伝導率を向上する方法
WO2005083804A1 (fr) * 2004-01-29 2005-09-09 Acol Technologies S.A. Diode electroluminescente comportant des moyens integraux de dissipation de chaleur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866371A (ja) * 1981-10-15 1983-04-20 Toshiba Corp 発光ダイオ−ド
JPS6156472A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 発光ダイオ−ド装置
JPS61207085A (ja) * 1985-03-11 1986-09-13 Toshiba Corp 光半導体装置
US4659170A (en) * 1983-07-29 1987-04-21 Rca Corporation Packages for electro-optic devices
EP0456343A1 (fr) * 1990-04-30 1991-11-13 Kulicke And Soffa Industries Inc. Support d'assemblage pour diodes électro-luminescentes à haute intensité

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866371A (ja) * 1981-10-15 1983-04-20 Toshiba Corp 発光ダイオ−ド
US4659170A (en) * 1983-07-29 1987-04-21 Rca Corporation Packages for electro-optic devices
JPS6156472A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 発光ダイオ−ド装置
JPS61207085A (ja) * 1985-03-11 1986-09-13 Toshiba Corp 光半導体装置
EP0456343A1 (fr) * 1990-04-30 1991-11-13 Kulicke And Soffa Industries Inc. Support d'assemblage pour diodes électro-luminescentes à haute intensité

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 10, no. 221 (E - 424) 2 August 1986 (1986-08-02) *
PATENT ABSTRACTS OF JAPAN vol. 11, no. 41 (E - 478)<2488> 6 February 1987 (1987-02-06) *
PATENT ABSTRACTS OF JAPAN vol. 7, no. 158 (E - 186)<1303> 12 July 1983 (1983-07-12) *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365920B1 (en) 1997-03-18 2002-04-02 Korvet Lights Luminescent diode
EP1139439A1 (fr) * 2000-03-31 2001-10-04 Relume Corporation DEL avec dissipateur thermique intégré
US7027304B2 (en) 2001-02-15 2006-04-11 Integral Technologies, Inc. Low cost thermal management device or heat sink manufactured from conductive loaded resin-based materials
EP1469513A2 (fr) * 2003-04-14 2004-10-20 Integral Technologies, Inc. Dispositif de traitement thermique ou dissipateur de chaleur à faible coût fabriqué à partir de matériaux conducteurs à base de résine
EP1469513A3 (fr) * 2003-04-14 2004-12-15 Integral Technologies, Inc. Dispositif de traitement thermique ou dissipateur de chaleur à faible coût fabriqué à partir de matériaux conducteurs à base de résine
JP2005079578A (ja) * 2003-08-28 2005-03-24 Agilent Technol Inc 熱伝導率を向上させた発光デバイス・アセンブリ、それを含むシステム及び熱伝導率を向上する方法
GB2405529B (en) * 2003-08-28 2008-02-20 Agilent Technologies Inc System and method for enhanced LED thermal conductivity
DE102004033106B4 (de) * 2003-08-28 2009-01-08 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. System und Verfahren für eine verbesserte thermische LED-Leitfähigkeit
WO2005083804A1 (fr) * 2004-01-29 2005-09-09 Acol Technologies S.A. Diode electroluminescente comportant des moyens integraux de dissipation de chaleur

Also Published As

Publication number Publication date
AU7841594A (en) 1995-04-18

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