WO1995001557A1 - Verfahren zur herstellung von kleinbauelementen - Google Patents
Verfahren zur herstellung von kleinbauelementen Download PDFInfo
- Publication number
- WO1995001557A1 WO1995001557A1 PCT/EP1994/002136 EP9402136W WO9501557A1 WO 1995001557 A1 WO1995001557 A1 WO 1995001557A1 EP 9402136 W EP9402136 W EP 9402136W WO 9501557 A1 WO9501557 A1 WO 9501557A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- connection
- individual
- semiconductor
- individual units
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Definitions
- the invention relates to a method for producing small components, in particular pressure sensors or similar sensors, which are constructed from at least two individual units stacked on top of one another.
- FIGS. 1 a to 1 c show a conventional method for producing small components 1 of this type.
- a silicon wafer 2 is produced which contains a large number of semiconductor individual units 5 or wafer sub-units 6.
- FIG. 1 a shows a top view and a perspective view of such a semiconductor individual unit 5, all of the semiconductor individual units 5 produced on the silicon wafer 2 being constructed in an equivalent manner and arranged in a regular manner.
- On the surface of a single semiconductor unit 5 is one electrical circuit arrangement provided with pads 14.
- a carrier molding is produced, which contains a plurality of carrier subunits 7.
- the silicon wafer 2 and the carrier molding together form a composite wafer, wherein the wafer sub-units 6 and the carrier sub-units 7 made of glass together form the semiconductor individual units 5.
- connection units 8 are produced. These individual connection units 8 have, for example, a projection 8-1 and a bore or cavity 8-2, as shown in FIG. 1b.
- the silicon wafer 2 and the carrier molding are cut, for example with a diamond saw, in order to produce a large number of individual semiconductor individual units 5 (FIG. 1 a).
- the object of the present invention is therefore
- connection fitting which has a plurality of connection individual units. Instead of connecting the individual semiconductor individual units to individual individual connection units, only a single alignment of the wafer and the connection fitting is required in the method according to the invention.
- This has the essential advantage that only a single work step is required to connect all the individual semiconductor units and individual connection units. This eliminates the need for individual alignment of a single semiconductor unit and a single connection unit.
- the connection individual units of the connection molding are arranged as regularly as the semiconductor individual units on the wafer, only alignment of the wafer and the connection molding is required, which considerably reduces the production time (approx. 1/300). The workload is thus reduced, the production time is considerably reduced, and thus a much more cost-effective production of such small components is possible.
- a wafer is produced with a plurality of wafer subunits
- a carrier molding is produced with a plurality of carrier subunits
- the wafer and the carrier molding with mutually aligned wafer subunits and carrier subunits are connected to one another to form a composite wafer with a multiplicity of semiconductor subunits from wafer subunits and carrier subunits, and that steps d) and e) are carried out with the assembled wafer.
- the production via a carrier molding enables only one alignment of the connecting molding, the carrier molding and the wafer to be required.
- the manufacturing time and the manufacturing costs are thus also reduced for the production of small components which consist of more than two individual units stacked on top of one another.
- the carrier molding can be connected to the wafer and the connecting molding simultaneously via their respective individual units in one step.
- the individual units are aligned beforehand.
- a eutectic or anodic bonding method or another suitable method can be used for the connecting step for connecting the individual units of the wafer and the connecting shaped piece or the carrier shaped piece. This is particularly advantageous because, in this method, it is not necessary to individually access semiconductor individual units located in a central section of the wafer in order to effect their connection. The wafer and the connection molding therefore only have to be aligned with one another and moved towards one another for eutectic or anodic bonding.
- the wafer, the connection molding and optionally the carrier molding are made of materials which have the same or similar thermal expansion coefficient.
- the wafer is made of silicon and the connection molding is made of glass, Vacon or Kovar, while the carrier molding is made of glass or Pyrex.
- further connecting steps can be carried out in order to connect the small components to further holding elements.
- These further connection steps can include glass soldering, bonding, gluing, electron beam welding or laser welding processes.
- these further holding elements also have similar thermal expansion coefficients as the small components produced.
- the small components are advantageously pressure sensors, the semiconductor individual units being produced as pressurized elements and the connecting individual units as connecting elements.
- a connecting film with conductor tracks leading along webs to individual connections is attached to the semiconductor individual units of the small components in such a way that the individual connections come into contact with connection pads of the semiconductor single units.
- the connecting film consists of a flexible material, for example polyimide.
- connecting film it is advantageous for the connecting film to be connected to the individual semiconductor units by gluing, soldering or tape bonding or for contacting it with other suitable connecting methods.
- the connecting film is designed with the individual connections, for example punched out, in such a way that the least possible application of force to the individual semiconductor units is ensured.
- Fig. La to lc a conventional manufacturing process for small components, which e.g. three stacked individual units are built up;
- Connection single unit which is provided in the connection molding shown in Figure 2b;
- FIG. 5 shows an embodiment of the manufacturing method according to the invention for manufacturing small components, which are made up of more than two stacked individual units, and
- Fig. 6 shows an embodiment of the manufacturing method according to the invention, in which a connecting film with conductor tracks for connecting the semiconductor individual units via e.g. four connection points with evaluation electronics is applied to the individual semiconductor units.
- FIG. 2 shows a manufacturing method according to the invention (hereinafter referred to as a full wafer manufacturing method) for small components which are made up of at least two individual units stacked on top of one another. These small components are pressure sensors, for example.
- a silicon wafer 2 is produced with a multiplicity of individual semiconductor units 5, which are arranged regularly on the wafer 2 (FIG. 2 a).
- a connection molding 4 is produced, which contains a plurality of interconnected individual connection units or connection elements 8.
- Figure 2b shows one Top view and a perspective view of the connection elements 8 arranged regularly next to one another in the connection molding 4. The number and size of the connection elements 8 corresponds to the number and size of the individual semiconductor units 5.
- the wafer processed in this way with any external dimensions (typically 4 ") and the connection fitting are aligned with one another in such a way that each semiconductor unit 5 is opposite a corresponding connection unit 8. Since the connection units 8 and the semiconductor units 5 have the same size , only two semiconductor individual units 5 and two connection individual units 8 have to be aligned with one another, so the number of semiconductor individual units 5 generated on the wafer is exactly the same number of connection individual units 8 with the same dimensions as for the Si wafer compared to the connection fitting, the respective semiconductor individual units and connection individual units being exact are brought into congruence with each other.
- any external dimensions typically 4
- connection fitting is aligned with one another in such a way that each semiconductor unit 5 is opposite a corresponding connection unit 8. Since the connection units 8 and the semiconductor units 5 have the same size , only two semiconductor individual units 5 and two connection individual units 8 have to be aligned with one another, so the number of semiconductor individual units 5 generated on the wafer is exactly the same number of connection individual units 8 with the same dimensions as for the Si wafer
- the silicon wafer and the connection fitting are connected to one another, for example by eutectic connection or another suitable connection technology, all opposite individual units being connected to one another at the same time.
- all semiconductor individual units are connected to their respective connection individual units in a single work step.
- FIG. 2d FIG. 2e showing a side view of this layered structure.
- FIG. 2f To produce the individual small components (FIG. 2f), the layered structure shown in FIG. 2d is cut along dividing lines 9, for example with a diamond saw.
- the connection molding 4 and the wafer 2 as well as a carrier molding 3 are cut simultaneously.
- connection molding 4 to be connected to the silicon wafer and the carrier molding 3 consist, for example, of a material which has an expansion coefficient similar to the silicon material (for example glass, Pyrex, Vacon, Kovar etc.). In this way, no unfavorable stress conditions occur when the connection molding, carrier molding and silicon wafer are connected.
- FIG. 3 shows an exemplary embodiment of a connection single unit 8, which is used in particular for the production of pressure sensors.
- FIG. 3a shows a perspective view
- FIG. 3b a side view
- FIG. 3c a top view.
- the connection single unit 8 consists of a projecting part 8-1 and a part with a bore 8-2. The part with the bore is provided for connection to the semiconductor individual units 5 (see FIG. 2a).
- connection method to a larger bracket can be done, for example, by glass soldering, gluing to glass connection elements 8 or by Electron beam or laser welding (with connection elements 8 from Vacon or Kovar) or by a similar method.
- FIGS. 4a and 4b show how the small components 1 consisting of the semiconductor individual unit 5, consisting of a wafer subunit 6 and a carrier subunit 7, and the connecting individual unit 8 are connected to such further holding elements 10 made of a different material. It is advantageous if the semiconductor single unit 5, the connection element 8 and the further holding element 10 have similar expansion coefficients in order to avoid stresses in the individual connections.
- FIG. 5 shows an embodiment of the manufacturing method according to the invention for small components.
- This embodiment is intended in particular for small components which are constructed from more than two individual units stacked one on top of the other.
- an additional carrier molding 3 is produced.
- This carrier molding 3 carries a plurality of carrier sub-units 7, the size of the wafer sub-units 6 of the semiconductor individual units 5 and
- connection individual units 8 correspond.
- the further support subunits 7 of the support molding 3 can be support pieces, spacers and further electrical circuits etc.
- the wafer 2, the carrier molding 3 and the connecting molding 4 are aligned with one another so that all of the individual units are opposite one another.
- the wafer 2 is first connected to the carrier molding 3.
- the further connection to the connection fitting 4 takes place. This can again be done by eutectic or anodic bonding.
- the wafer 2, the carrier molding 3 and the connection molding 4 are cut simultaneously, so that a large number of small components are produced which consist of more than two individual units.
- a further advantageous embodiment of the method according to the invention comprises the attachment, for example gluing or another suitable contacting method, of a connecting film 11 to the semiconductor individual units 5 of the small components 1, as shown in FIG. 6.
- the connecting film 11 is designed, for example punched out, so that it has individual connections 13, which in each case correspond to connection pads 14 (see also FIG. 2a) on the semiconductor individual units 5 and lie opposite them.
- the connecting film 11 has conductor tracks 12 along webs 15 which are connected to these individual connections 13.
- the conductor tracks 12 are connected, for example, to evaluation electronics for the small components 1.
- the connecting film 11 is provided separately for each small component 1 and has a circular shape with punched-outs.
- the connecting film 11 is now connected in such a way that only the individual connections 13 come to lie on the respective connection pads 14 of the semiconductor detail 5. By attaching such a connecting film, a particularly stress-free connection is established between the individual semiconductor units and the evaluation electronics. It is advantageous if the connecting film 11 consists of flexible plastic, for example polyimide. The shape of a connecting film 11 with such individual connections 13 ensures the least possible introduction of force onto the small component 1.
- the full-wafer production method according to the invention is suitable for the production of small components which have extremely small dimensions, for example 2, 3 or 4 mm edge length, since individual alignment of semiconductor individual units and connection individual units is difficult for such small components.
- the invention advantageously circumvents this problem by producing a wafer and a connecting shaped piece, only the wafer and the connecting shaped piece having to be aligned and connected to one another. The process is therefore inexpensive and enables the production of 200, 400 or 600 similar small components in the shortest possible time.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94923705A EP0657024A1 (de) | 1993-06-30 | 1994-06-30 | Verfahren zur herstellung von kleinbauelementen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19934321804 DE4321804A1 (de) | 1993-06-30 | 1993-06-30 | Verfahren zur Herstellung von Kleinbauelementen |
DEP4321804.0 | 1993-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995001557A1 true WO1995001557A1 (de) | 1995-01-12 |
Family
ID=6491630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1994/002136 WO1995001557A1 (de) | 1993-06-30 | 1994-06-30 | Verfahren zur herstellung von kleinbauelementen |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0657024A1 (de) |
CA (1) | CA2143641A1 (de) |
DE (1) | DE4321804A1 (de) |
WO (1) | WO1995001557A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000517052A (ja) * | 1996-08-27 | 2000-12-19 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 圧力センサの製法 |
DE19826426C2 (de) * | 1998-06-16 | 2003-08-21 | Elbau Elektronik Bauelemente G | Miniaturisiertes elektronisches System und Verfahren zu seiner Herstellung |
DE19843917A1 (de) * | 1998-09-24 | 2000-03-09 | Siemens Ag | Halbleiter-Drucksensor und Verfahren zum Herstellen eines solchen Halbleiter-Drucksensors |
DE19902450B4 (de) * | 1999-01-22 | 2006-04-20 | Festo Ag & Co. | Miniaturisiertes elektronisches System und zu dessen Herstellung geeignetes Verfahren |
KR101149683B1 (ko) | 2003-12-03 | 2012-05-24 | 파크 테크-파카징 테크놀로지이스 게엠베하 | 두 웨이퍼의 교번 접촉을 위한 방법 및 장치 |
DE10361521A1 (de) | 2003-12-03 | 2005-07-07 | Pac Tech - Packaging Technologies Gmbh | Verfahren und Vorrichtung zur wechselseitigen Kontaktierung von zwei Wafern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0140992A1 (de) * | 1983-11-10 | 1985-05-15 | Kristal Instrumente AG | Wandlerelement, Verfahren zu seiner Herstellung sowie Verwendung für einen Druckaufnehmer |
DE3500613A1 (de) * | 1984-03-09 | 1985-09-19 | Hans W. Dipl.-Phys. ETH Winterthur Keller | Piezoresistive druckmesszelle |
WO1987007948A1 (en) * | 1986-06-23 | 1987-12-30 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
DE4211247A1 (de) * | 1991-06-04 | 1992-12-10 | Mitsubishi Electric Corp | Mit membran-drucksensorelementen ausgestatteter halbleiter-wafer und verfahren zur herstellung desselben |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
US3355636A (en) * | 1965-06-29 | 1967-11-28 | Rca Corp | High power, high frequency transistor |
DE3147729A1 (de) * | 1981-12-02 | 1983-06-09 | Siemens AG, 1000 Berlin und 8000 München | Zwischentraegerband mit verdrahtungselementen zur bestueckung mit chipbausteinen |
FR2616542B1 (fr) * | 1987-06-12 | 1989-10-06 | Renault | Procede de fabrication collective de capteurs de pression capacitifs |
GB8718639D0 (en) * | 1987-08-06 | 1987-09-09 | Spectrol Reliance Ltd | Capacitive pressure sensors |
FI893874A (fi) * | 1989-08-17 | 1991-02-18 | Vaisala Oy | Kontaktfoersedd givare med skiktstruktur samt foerfarande foer utfoerande av kontakteringen. |
DE4239132C2 (de) * | 1991-11-20 | 2002-06-06 | Denso Corp | Verfahren zum Fabrizieren eines integrierten Drucksensors |
-
1993
- 1993-06-30 DE DE19934321804 patent/DE4321804A1/de not_active Withdrawn
-
1994
- 1994-06-30 CA CA002143641A patent/CA2143641A1/en not_active Abandoned
- 1994-06-30 WO PCT/EP1994/002136 patent/WO1995001557A1/de not_active Application Discontinuation
- 1994-06-30 EP EP94923705A patent/EP0657024A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0140992A1 (de) * | 1983-11-10 | 1985-05-15 | Kristal Instrumente AG | Wandlerelement, Verfahren zu seiner Herstellung sowie Verwendung für einen Druckaufnehmer |
DE3500613A1 (de) * | 1984-03-09 | 1985-09-19 | Hans W. Dipl.-Phys. ETH Winterthur Keller | Piezoresistive druckmesszelle |
WO1987007948A1 (en) * | 1986-06-23 | 1987-12-30 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
DE4211247A1 (de) * | 1991-06-04 | 1992-12-10 | Mitsubishi Electric Corp | Mit membran-drucksensorelementen ausgestatteter halbleiter-wafer und verfahren zur herstellung desselben |
Non-Patent Citations (1)
Title |
---|
O. EHRMANN U.A.: "TAB-KONTAKTIERUNG FÜR SENSOREN", TECHNISCHES MESSEN TM, vol. 56, no. 11, November 1989 (1989-11-01), MUNCHEN DE, pages 415 - 417, XP000072605 * |
Also Published As
Publication number | Publication date |
---|---|
CA2143641A1 (en) | 1995-01-12 |
EP0657024A1 (de) | 1995-06-14 |
DE4321804A1 (de) | 1995-01-12 |
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