CA2143641A1 - Process for producing miniature components - Google Patents
Process for producing miniature componentsInfo
- Publication number
- CA2143641A1 CA2143641A1 CA002143641A CA2143641A CA2143641A1 CA 2143641 A1 CA2143641 A1 CA 2143641A1 CA 002143641 A CA002143641 A CA 002143641A CA 2143641 A CA2143641 A CA 2143641A CA 2143641 A1 CA2143641 A1 CA 2143641A1
- Authority
- CA
- Canada
- Prior art keywords
- individual
- wafer
- units
- individual semiconductor
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000011888 foil Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000005304 joining Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 229910000833 kovar Inorganic materials 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 50
- 238000004519 manufacturing process Methods 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 101000654316 Centruroides limpidus Beta-toxin Cll2 Proteins 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Abstract
In a method of producing small components, in particular pressure or similar sensors, which are made up of at least two individual units (5, 8) superimposed in layers, a wafer (2) is produced which has a plurality of individual semiconductor units (5). Additionally, a shaped connecting part (4) is produced which has a plurality of individual connecting units (8), the individual semiconductor units (5) and the individual connecting units (8) corresponding in terms of size to one another and being arranged regularly on the wafer (2) and the shaped connecting part (4), respectively. In a single method step, all individual units (5, 8) of the wafer (2) and the shaped connecting part (4) are joined to each other. This layered structure is then cut to form the small components. In order to contact the individual semiconductor units (5), a connecting foil comprising strip conductors along webs can be mounted onto the individual semiconductor units.
Description
Method of producing small components The invention relates to a method of producing small components, in particular pressure or similar sensors, which consist of at least two individual units superimposed in layers.
Figures 1 a to 1c show a commonly known method of manufacturing such small components 1. In a first method step (Fig. 1a), a silicon wafer 2 is produced which includes a plurality of individual semiconductor units 5 or wafer subunits 6. Fig. 1a shows a plan view and a perspective view of such an individual semiconductor unit, all individual semiconductor units 5 produced on the silicon wafer 2 being similarly structured and regularly arranged. An electrical circuit arrangement with connecting or terminal spots 14 is arranged on the surface of an individual semiconductor unit 5.
Further, a shaped carrier part is produced which includes a plurality of carrier subunits 7. The silicon wafer 2 and the shaped carrier part together form a built-up wafer, the wafer subunits 6 and the carrier subunits 7 of glass together forming the individual semiconductor units 5.
In a further method step (Fig. 1b), a plurality of individual connecting units 8 are produced. These individual connecting units 8 have, for example, a projection 8-1 and a bore or recess 8-2 as shown in Fig. 1b. Following manufacture of a plurality of such individual connecting units 8, the silicon wafer 2 and the shaped carrier part are cut, for example, C~2 1 43G~ l with a diamond saw in order to produce a plurality of individual semiconductor units 5 (Fig. 1 a) .
In two further method steps (Fig. 1c), all of the individual units 6, 7 and 8 are joined in order to produce the small components 5.
Thus, in such a method of producing components, as many individual joining operations are necessary as there are individual semiconductor units produced from the silicon wafer 2. In view of the fact that, for example, 200, 400 or 600 individual semiconductor units can be produced on one wafer, this results in the corresponding number of individual joining operations, which is very time-consuming, uneconomical and costly.
Additionally, the individual semiconductor units have extremely small dimensions, for example 2, 3 or 4 mm edge lengths. Consequently, for the joining operations indicated in Fig. 1c, an alignment of the water subunit 6, the carrier subunit 7 and the individual connecting units 8 must be carried out, but the gripping, aligning and joining of such small dimensions is extremely difficult and time-consuming.
It is therefore the object of the present invention to provide a method by means of which a plurality of small components consisting of at least two individual units superimposed in layers can be produced in a short time with little input of effort and at low cost.
This object is solved in accordance with the invention by a method of producing small components which is characterized by the following steps:
a) producing a wafer with a plurality of individual semiconductor units;
b) producing a shaped connecting part with a plurality of individual connecting units;
c) aligning the wafer and the shaped connecting part in such a manner that an individual semiconductor unit respectively opposes an individual connecting unit;
d) simultaneously joining each individual semiconductor unit with its respective individual connecting unit, the wafer and the shaped connecting part being maintained;
e) producing the small components by simultaneously separating the wafer and the shaped connecting part along separating lines between the individually joined individual semiconductor units and individual connecting units.
In accordance with the invention, it is suggested to produce a shaped connecting piece which has a plurality of individual connecting units.
Instead of the joining of individual semiconductor units with individual connecting units individually, only one alignment of the wafer and the shaped connecting part is necessary in accordance with the inventive method. This provides the considerable advantage that only a single operation step is necessary for connecting all individual semiconductor units and individual connecting units. Consequently, it is no longer necessary to individually align an individual semiconductor unit and an individual connecting unit. So long as it is ensured that the individual connecting units of the shaped connecting parts are arranged regularly in the same manner as the individual semiconductor units on the waver, only one alignment of the wafer and the shaped connecting part is CA2 1 436d 1 necessary, which considerably reduces the production time (approximately 1/300). Thus, the work input is reduced, the production time is considerably shortened and a considerably cheaper production of such small components is thus possible.
An advantageous embodiment of the method according to the invention can also be used in the production of small components which consist of more than two individual units superimposed in layers in such a manner that - a wafer with a plurality of wafer subunits is produced, - a shaped carrier part with a plurality of carrier subunits is produced, - the wafer and the shaped carrier part with wafer subunits and carrier subunits aligned with respect to each other are joined with a plurality of individual semiconductor units consisting of wafer subunits and carrier subunits to form a built-up wafer, and that the steps d) and e) are carried out with the built-up wafer.
Thus, even when the small components are to be made up of several individual units superimposed in layers, the manufacture by means of one shaped carrier part makes it possible that only one alignment of the shaped connecting part, the shaped carrier part and the wafer is necessary. Thus, the manufacturing time and the manufacturing costs for the production of small components which consist of more than two individual units superimposed in layers is also reduced.
In the last-mentioned method of producing small components which consist of more than two individual units, the shaped carrier part can be joined with the wafer and the shaped connecting part simultaneously in one step by means of their respective individual units. In this case, an alignment of the individual units takes place first.
However, it is also possible to align respectively the wafer and a shaped carrier part with respect to each other and to initially join these, after which a further alignment of this stacked structure with the shaped connecting part is carried out before joining these. As only one alignment of a wafer, the shaped carrier part and the shaped connecting part is necessary, the manufacturing time is substantially reduced also for the production of small components consisting of more than two individual units.
For the joining step to join the individual units of the wafer and the shaped connecting part, or the shaped carrier part, a eutectic or anodic bonding process or another suitable process can be used. This is particularly advantageous because, in this method, it is not necessary to individually gain access to individual semiconductor units Iying in a central portion of the wafer. The wafer and the shaped connecting part must therefore simply be aligned with respect to each other and moved towards one another for the eutectic or anodic bonding.
In order to prevent stresses in the small components, it is advantageous if the wafer, the shaped connecting part and possibly the shaped carrier part are produced from materials which have the same or a similar coefficient of thermal expansion. For example, the wafer is produced from silicon and the shaped connecting part from glass, vacon or kovar, while the shaped carrier part is made from glass or pyrex.
CA2 1 436~ ~
Following production of the small components, further joining steps can be carried out in order to connect the small components with additional holding elements. These further joining steps can include glass soldering, adhesion, electron-beam welding for laser welding processes.
Advantageously, these additional holding elements also have similar coefficients of thermal expansion as those of the produced small components.
Advantageously, the small components are pressure sensors, the individual semiconductor units being produced as elements exposed to pressure and the individual connecting units being produced as connecting or terminal elements.
In order to connect the small components with analysing electronics, it is advantageous that in a further method step a connecting foil is applied onto the individual semiconductor units of the small components in such a manner with strip conductors along webs which lead to individual terminals that these individual terminals come to lie in a contacting manner on connecting or terminal spots of the individual semiconductor units.
In order to prevent stresses in the connection, the connecting foil consists of a flexible material such as polyimide.
It is advantageous that the connecting foil is joined by means of adhesion, soldering or tape-bonding to the individual semiconductor units or contacted by means of other suitable connecting processes.
CA21 43~41 The connecting foil is formed with individual terminals, such as stamped out terminals, in such a manner that it is ensured that there is the smallest possible introduction of force onto the individual semiconductor units.
In the following, the invention is described in more detail with reference to the drawings.
In the drawings there is shown in:
igs. 1 a to 1 c a commonly known production method for small components which are made, for example, of three individual units superimposed in layers;
igs. 2a to 2f a production method for small components according to the invention;
igs. 3a to 3c an embodiment of an individual connecting unit which is provided in the shaped connecting part shown in Fig. 2b;
igs. 4a and 4b a small component produced by means of the production method according to the invention which is connected with an additional holding element;
Fig. 5 an embodiment of the production method according to the invention for producing small components which are made up of more than two individual units superimposed in.layers; and Fig. 6 an embodiment of the production method according to the invention in which a connecting foil, with conductor strips for the connection of the individual semiconductor units by means of, for example, four terminal points to analysing electronics, is mounted onto the individual semiconductor units.
In the following description of advantageous embodiments of the invention, the reference signs denote the same or corresponding parts as in Figs. 1 a to 1 c.
Fig. 2 shows a production method according to the invention (denoted full-wafer production method in the following) for small components which are made up of at least two individual units superimposed in layers. For example, these small components are pressure sensors. Firstly, as in the commonly known method (Fig. 1 a), a silicon wafer 2 is produced with a plurality of individual semiconductor units 5 which are arranged in a regular manner on the wafer 2 (Fig. 2a). Additionally, a shaped connecting part 4 is produced which includes a plurality of individual connecting units or connecting or terminal elements 8 joined to each other. Fig. 2b shows a top plan view and a perspective view of the terminal elements 8 arranged in a regular manner adjacent each other in the shaped connecting part 4.
The number and size of the terminal elements 8 corresponds to the number and size of the individual semiconductor units 5.
In a next method step (Fig. 2c), the wafer processed in this manner with any desirable outer dimensions (typically 4") and the shaped connecting part are aligned with respect to each other in such a manner that each individual semiconductor unit 5 opposes a corresponding individual connecting unit 8. As the individual connecting units and the individual semiconductor units 5 have the same size, only two individual semiconductor units 5 and two individual connecting units 8 must be aligned with respect to each other. The number of individual semiconductor units 5 produced on the wafer are therefore opposed by exactly the same number of individual connecting units 8, with the same dimensions as the Si-wafer, of the shaped connecting part, the respective individual semiconductor units and individual connecting units being placed in exact superposition with respect to each other.
As shown in Fig. 2, the silicon wafer and the shaped connecting part are then joined to each other by means of a eutectic joining process or another suitable joining technique, all opposing individual units being simultaneously joined to each other. Thus, all individual semiconductor units are joined with their respective individual connecting units in a single operation step. The structure produced in this manner is shown in Fig. 2d, Fig. 2e showing a side view of this layered structure.
In order to produce the individual small components (Fig. 2f), the layered structure shown in Fig. 2d is cut along the separating lines 9, for example with a diamond saw. In this case, the shaped connecting part 4 and the wafer 2 as well as a shaped carrier part 3 are simultaneously separated.
The shaped connecting part 4 and the shaped carrier part 3 to be joined to the silicon wafer consists, for example, of a material which has a similar expansion coefficient to that of the silicon material (for example glass, pyrex, vacon, kovar etc.). Thus, in joining the shaped connecting part, the shaped carrier part and the silicon wafer, no unfavourable stress conditions are produced.
Fig. 3 shows an exemplary embodiment of an individual connecting unit 8which is particularly used for the production of pressure sensors. Fig. 3a shows a perspective view, Fig. 3b a side view and Fig. 3c a top plan view.
The individual connecting unit 8 consists of a projecting part 8-1 and a part with a bore 8-2. The part with the bore is provided for connection with the individual semiconductor units 5 (see Fig. 2a).
As fig. 4 shows, the shape of the individual connecting units or terminal elements 8 is appropriately selected for a further connecting process. This connecting process for a larger holder can, for example, ensue by means of glass soldering, adhesion in the case of terminal elements 8 consisting of glass, or by means of electron-beam or laser welding (in the case of terminal elements 8 of vacon or kovar) or by means of another similar process. Figs. 4a and 4b show how the small components 1, consisting of the individual semiconductor unit 5, which itself consists of a wafer subunit 6 and a carrier subunit 7, and the individual connecting unit 8 can be connected with such further holding elements 10 of a different material.
In this case, it is of advantage when the individual semiconductor unit 5, the terminal element 8 and the further holding element 10 have similar expansion coefficients in order to prevent stresses in the individual joints.
Fig. 5 shows an embodiment of the production method for small components according to the invention. This embodiment is Cll2 I 436~ 1 especially provided for small components which are made up of more than two individual units superimposed in layers. In this method, in addition to the production of the silicon wafer 2 and the shaped connecting part 4, an additional shaped carrier part 3 is produced. This shaped carrier part 3 carries a plurality of carrier subunits 7 which correspond in terms of size to the wafer subunits 6 of the individual semiconductor units 5 and to the individual connecting units 8. The additional carrier subunits 7 of the shaped carrier part 3 can be carrier parts, spacer parts, other electrical circuits etc. In the method shown in Fig. 5, the wafer 2, the shaped carrier part 3 and the shaped connecting part 4 are aligned with respect to each other so that all respective individual units oppose one another.
In a further step, the wafer 2 is first joined with the shaped carrier part 3.
Following this, there is then the further joining to the shaped connecting part 4. This can again take place by means of eutectic or anodic bonding.
Following this, the wafer 2, the shaped carrier part 3 and the shaped connecting part 4 are simultaneously cut so that a plurality of small components are produced which consist of more than two individual units.
Although an alignment of the wafer 2, the shaped carrier part 3 and theshaped connecting part 4 is carried out simultaneously in Fig. 5, it is also possible to initially align the wafer 2 and the shaped carrier part 3 with respect to each other, to join these together and then to align the composite layers 2, 3 with the shaped connecting part 4 and thus join these .
A further advantageous embodiment of the method according to the invention includes the application, for example by means of bonding or another suitable contacting process, of a connecting foil 11 onto the individual semiconductor unit 5 of the small components 1, as illustrated in Fig. 6. The connecting foil 11 is shaped in such a manner, for example by stamping out, that it has individual terminals 13 which correspond to and lie opposite respective terminal spots 14 (see also Fig. 2a) on the individual semiconductor units 5. The connecting foil 11 has strip conductors 12 along webs 15 which are connected with these individual terminals 13.
The strip conductors are, for example, connected with analysing electronics for the small components 1. The connecting foil 11 is provided separately for each small component 1 and has a circular shape with cut-outs .
The connecting foil 11 is joined in such a manner that only the individual terminals 13 come to lie on the respective terminal spots 14 of the individual semiconductor unit 5. On account of the application of such a connecting foil, a particularly stress-free joint between the individual semiconductor units and the analysing electronics is produced. In this case, it is advantageous when the connecting foil 11 consists of flexible plastic such as polyimide. The shape of a connecting foil 11 with such individual terminals 13 guarantees the smallest possible exertion of force onto the small component 1.
The full-wafer production method according to the invention was described above in connection with the production of pressure sensors consisting of silicon wafers, but it is also suitable for the production of any kind of small components.
~A21 43641 The full-wafer production method according to the invention is particularly suitable for the manufacture of small components that have extremely small dimensions, for example 2, 3 or 4 mm edge lengths, since the individual alignment of individual semiconductor units and individual connecting units is difficult for such small components. In an advantageous manner, the invention avoids this problem by producing a wafer and a shaped connecting part, the wafer and the shaped connecting part simply having to be aligned with respect to each other and joined.
Thus, the method is cheap and makes the production of 200, 400 or 600 similar small components possible in the shortest time.
Figures 1 a to 1c show a commonly known method of manufacturing such small components 1. In a first method step (Fig. 1a), a silicon wafer 2 is produced which includes a plurality of individual semiconductor units 5 or wafer subunits 6. Fig. 1a shows a plan view and a perspective view of such an individual semiconductor unit, all individual semiconductor units 5 produced on the silicon wafer 2 being similarly structured and regularly arranged. An electrical circuit arrangement with connecting or terminal spots 14 is arranged on the surface of an individual semiconductor unit 5.
Further, a shaped carrier part is produced which includes a plurality of carrier subunits 7. The silicon wafer 2 and the shaped carrier part together form a built-up wafer, the wafer subunits 6 and the carrier subunits 7 of glass together forming the individual semiconductor units 5.
In a further method step (Fig. 1b), a plurality of individual connecting units 8 are produced. These individual connecting units 8 have, for example, a projection 8-1 and a bore or recess 8-2 as shown in Fig. 1b. Following manufacture of a plurality of such individual connecting units 8, the silicon wafer 2 and the shaped carrier part are cut, for example, C~2 1 43G~ l with a diamond saw in order to produce a plurality of individual semiconductor units 5 (Fig. 1 a) .
In two further method steps (Fig. 1c), all of the individual units 6, 7 and 8 are joined in order to produce the small components 5.
Thus, in such a method of producing components, as many individual joining operations are necessary as there are individual semiconductor units produced from the silicon wafer 2. In view of the fact that, for example, 200, 400 or 600 individual semiconductor units can be produced on one wafer, this results in the corresponding number of individual joining operations, which is very time-consuming, uneconomical and costly.
Additionally, the individual semiconductor units have extremely small dimensions, for example 2, 3 or 4 mm edge lengths. Consequently, for the joining operations indicated in Fig. 1c, an alignment of the water subunit 6, the carrier subunit 7 and the individual connecting units 8 must be carried out, but the gripping, aligning and joining of such small dimensions is extremely difficult and time-consuming.
It is therefore the object of the present invention to provide a method by means of which a plurality of small components consisting of at least two individual units superimposed in layers can be produced in a short time with little input of effort and at low cost.
This object is solved in accordance with the invention by a method of producing small components which is characterized by the following steps:
a) producing a wafer with a plurality of individual semiconductor units;
b) producing a shaped connecting part with a plurality of individual connecting units;
c) aligning the wafer and the shaped connecting part in such a manner that an individual semiconductor unit respectively opposes an individual connecting unit;
d) simultaneously joining each individual semiconductor unit with its respective individual connecting unit, the wafer and the shaped connecting part being maintained;
e) producing the small components by simultaneously separating the wafer and the shaped connecting part along separating lines between the individually joined individual semiconductor units and individual connecting units.
In accordance with the invention, it is suggested to produce a shaped connecting piece which has a plurality of individual connecting units.
Instead of the joining of individual semiconductor units with individual connecting units individually, only one alignment of the wafer and the shaped connecting part is necessary in accordance with the inventive method. This provides the considerable advantage that only a single operation step is necessary for connecting all individual semiconductor units and individual connecting units. Consequently, it is no longer necessary to individually align an individual semiconductor unit and an individual connecting unit. So long as it is ensured that the individual connecting units of the shaped connecting parts are arranged regularly in the same manner as the individual semiconductor units on the waver, only one alignment of the wafer and the shaped connecting part is CA2 1 436d 1 necessary, which considerably reduces the production time (approximately 1/300). Thus, the work input is reduced, the production time is considerably shortened and a considerably cheaper production of such small components is thus possible.
An advantageous embodiment of the method according to the invention can also be used in the production of small components which consist of more than two individual units superimposed in layers in such a manner that - a wafer with a plurality of wafer subunits is produced, - a shaped carrier part with a plurality of carrier subunits is produced, - the wafer and the shaped carrier part with wafer subunits and carrier subunits aligned with respect to each other are joined with a plurality of individual semiconductor units consisting of wafer subunits and carrier subunits to form a built-up wafer, and that the steps d) and e) are carried out with the built-up wafer.
Thus, even when the small components are to be made up of several individual units superimposed in layers, the manufacture by means of one shaped carrier part makes it possible that only one alignment of the shaped connecting part, the shaped carrier part and the wafer is necessary. Thus, the manufacturing time and the manufacturing costs for the production of small components which consist of more than two individual units superimposed in layers is also reduced.
In the last-mentioned method of producing small components which consist of more than two individual units, the shaped carrier part can be joined with the wafer and the shaped connecting part simultaneously in one step by means of their respective individual units. In this case, an alignment of the individual units takes place first.
However, it is also possible to align respectively the wafer and a shaped carrier part with respect to each other and to initially join these, after which a further alignment of this stacked structure with the shaped connecting part is carried out before joining these. As only one alignment of a wafer, the shaped carrier part and the shaped connecting part is necessary, the manufacturing time is substantially reduced also for the production of small components consisting of more than two individual units.
For the joining step to join the individual units of the wafer and the shaped connecting part, or the shaped carrier part, a eutectic or anodic bonding process or another suitable process can be used. This is particularly advantageous because, in this method, it is not necessary to individually gain access to individual semiconductor units Iying in a central portion of the wafer. The wafer and the shaped connecting part must therefore simply be aligned with respect to each other and moved towards one another for the eutectic or anodic bonding.
In order to prevent stresses in the small components, it is advantageous if the wafer, the shaped connecting part and possibly the shaped carrier part are produced from materials which have the same or a similar coefficient of thermal expansion. For example, the wafer is produced from silicon and the shaped connecting part from glass, vacon or kovar, while the shaped carrier part is made from glass or pyrex.
CA2 1 436~ ~
Following production of the small components, further joining steps can be carried out in order to connect the small components with additional holding elements. These further joining steps can include glass soldering, adhesion, electron-beam welding for laser welding processes.
Advantageously, these additional holding elements also have similar coefficients of thermal expansion as those of the produced small components.
Advantageously, the small components are pressure sensors, the individual semiconductor units being produced as elements exposed to pressure and the individual connecting units being produced as connecting or terminal elements.
In order to connect the small components with analysing electronics, it is advantageous that in a further method step a connecting foil is applied onto the individual semiconductor units of the small components in such a manner with strip conductors along webs which lead to individual terminals that these individual terminals come to lie in a contacting manner on connecting or terminal spots of the individual semiconductor units.
In order to prevent stresses in the connection, the connecting foil consists of a flexible material such as polyimide.
It is advantageous that the connecting foil is joined by means of adhesion, soldering or tape-bonding to the individual semiconductor units or contacted by means of other suitable connecting processes.
CA21 43~41 The connecting foil is formed with individual terminals, such as stamped out terminals, in such a manner that it is ensured that there is the smallest possible introduction of force onto the individual semiconductor units.
In the following, the invention is described in more detail with reference to the drawings.
In the drawings there is shown in:
igs. 1 a to 1 c a commonly known production method for small components which are made, for example, of three individual units superimposed in layers;
igs. 2a to 2f a production method for small components according to the invention;
igs. 3a to 3c an embodiment of an individual connecting unit which is provided in the shaped connecting part shown in Fig. 2b;
igs. 4a and 4b a small component produced by means of the production method according to the invention which is connected with an additional holding element;
Fig. 5 an embodiment of the production method according to the invention for producing small components which are made up of more than two individual units superimposed in.layers; and Fig. 6 an embodiment of the production method according to the invention in which a connecting foil, with conductor strips for the connection of the individual semiconductor units by means of, for example, four terminal points to analysing electronics, is mounted onto the individual semiconductor units.
In the following description of advantageous embodiments of the invention, the reference signs denote the same or corresponding parts as in Figs. 1 a to 1 c.
Fig. 2 shows a production method according to the invention (denoted full-wafer production method in the following) for small components which are made up of at least two individual units superimposed in layers. For example, these small components are pressure sensors. Firstly, as in the commonly known method (Fig. 1 a), a silicon wafer 2 is produced with a plurality of individual semiconductor units 5 which are arranged in a regular manner on the wafer 2 (Fig. 2a). Additionally, a shaped connecting part 4 is produced which includes a plurality of individual connecting units or connecting or terminal elements 8 joined to each other. Fig. 2b shows a top plan view and a perspective view of the terminal elements 8 arranged in a regular manner adjacent each other in the shaped connecting part 4.
The number and size of the terminal elements 8 corresponds to the number and size of the individual semiconductor units 5.
In a next method step (Fig. 2c), the wafer processed in this manner with any desirable outer dimensions (typically 4") and the shaped connecting part are aligned with respect to each other in such a manner that each individual semiconductor unit 5 opposes a corresponding individual connecting unit 8. As the individual connecting units and the individual semiconductor units 5 have the same size, only two individual semiconductor units 5 and two individual connecting units 8 must be aligned with respect to each other. The number of individual semiconductor units 5 produced on the wafer are therefore opposed by exactly the same number of individual connecting units 8, with the same dimensions as the Si-wafer, of the shaped connecting part, the respective individual semiconductor units and individual connecting units being placed in exact superposition with respect to each other.
As shown in Fig. 2, the silicon wafer and the shaped connecting part are then joined to each other by means of a eutectic joining process or another suitable joining technique, all opposing individual units being simultaneously joined to each other. Thus, all individual semiconductor units are joined with their respective individual connecting units in a single operation step. The structure produced in this manner is shown in Fig. 2d, Fig. 2e showing a side view of this layered structure.
In order to produce the individual small components (Fig. 2f), the layered structure shown in Fig. 2d is cut along the separating lines 9, for example with a diamond saw. In this case, the shaped connecting part 4 and the wafer 2 as well as a shaped carrier part 3 are simultaneously separated.
The shaped connecting part 4 and the shaped carrier part 3 to be joined to the silicon wafer consists, for example, of a material which has a similar expansion coefficient to that of the silicon material (for example glass, pyrex, vacon, kovar etc.). Thus, in joining the shaped connecting part, the shaped carrier part and the silicon wafer, no unfavourable stress conditions are produced.
Fig. 3 shows an exemplary embodiment of an individual connecting unit 8which is particularly used for the production of pressure sensors. Fig. 3a shows a perspective view, Fig. 3b a side view and Fig. 3c a top plan view.
The individual connecting unit 8 consists of a projecting part 8-1 and a part with a bore 8-2. The part with the bore is provided for connection with the individual semiconductor units 5 (see Fig. 2a).
As fig. 4 shows, the shape of the individual connecting units or terminal elements 8 is appropriately selected for a further connecting process. This connecting process for a larger holder can, for example, ensue by means of glass soldering, adhesion in the case of terminal elements 8 consisting of glass, or by means of electron-beam or laser welding (in the case of terminal elements 8 of vacon or kovar) or by means of another similar process. Figs. 4a and 4b show how the small components 1, consisting of the individual semiconductor unit 5, which itself consists of a wafer subunit 6 and a carrier subunit 7, and the individual connecting unit 8 can be connected with such further holding elements 10 of a different material.
In this case, it is of advantage when the individual semiconductor unit 5, the terminal element 8 and the further holding element 10 have similar expansion coefficients in order to prevent stresses in the individual joints.
Fig. 5 shows an embodiment of the production method for small components according to the invention. This embodiment is Cll2 I 436~ 1 especially provided for small components which are made up of more than two individual units superimposed in layers. In this method, in addition to the production of the silicon wafer 2 and the shaped connecting part 4, an additional shaped carrier part 3 is produced. This shaped carrier part 3 carries a plurality of carrier subunits 7 which correspond in terms of size to the wafer subunits 6 of the individual semiconductor units 5 and to the individual connecting units 8. The additional carrier subunits 7 of the shaped carrier part 3 can be carrier parts, spacer parts, other electrical circuits etc. In the method shown in Fig. 5, the wafer 2, the shaped carrier part 3 and the shaped connecting part 4 are aligned with respect to each other so that all respective individual units oppose one another.
In a further step, the wafer 2 is first joined with the shaped carrier part 3.
Following this, there is then the further joining to the shaped connecting part 4. This can again take place by means of eutectic or anodic bonding.
Following this, the wafer 2, the shaped carrier part 3 and the shaped connecting part 4 are simultaneously cut so that a plurality of small components are produced which consist of more than two individual units.
Although an alignment of the wafer 2, the shaped carrier part 3 and theshaped connecting part 4 is carried out simultaneously in Fig. 5, it is also possible to initially align the wafer 2 and the shaped carrier part 3 with respect to each other, to join these together and then to align the composite layers 2, 3 with the shaped connecting part 4 and thus join these .
A further advantageous embodiment of the method according to the invention includes the application, for example by means of bonding or another suitable contacting process, of a connecting foil 11 onto the individual semiconductor unit 5 of the small components 1, as illustrated in Fig. 6. The connecting foil 11 is shaped in such a manner, for example by stamping out, that it has individual terminals 13 which correspond to and lie opposite respective terminal spots 14 (see also Fig. 2a) on the individual semiconductor units 5. The connecting foil 11 has strip conductors 12 along webs 15 which are connected with these individual terminals 13.
The strip conductors are, for example, connected with analysing electronics for the small components 1. The connecting foil 11 is provided separately for each small component 1 and has a circular shape with cut-outs .
The connecting foil 11 is joined in such a manner that only the individual terminals 13 come to lie on the respective terminal spots 14 of the individual semiconductor unit 5. On account of the application of such a connecting foil, a particularly stress-free joint between the individual semiconductor units and the analysing electronics is produced. In this case, it is advantageous when the connecting foil 11 consists of flexible plastic such as polyimide. The shape of a connecting foil 11 with such individual terminals 13 guarantees the smallest possible exertion of force onto the small component 1.
The full-wafer production method according to the invention was described above in connection with the production of pressure sensors consisting of silicon wafers, but it is also suitable for the production of any kind of small components.
~A21 43641 The full-wafer production method according to the invention is particularly suitable for the manufacture of small components that have extremely small dimensions, for example 2, 3 or 4 mm edge lengths, since the individual alignment of individual semiconductor units and individual connecting units is difficult for such small components. In an advantageous manner, the invention avoids this problem by producing a wafer and a shaped connecting part, the wafer and the shaped connecting part simply having to be aligned with respect to each other and joined.
Thus, the method is cheap and makes the production of 200, 400 or 600 similar small components possible in the shortest time.
Claims (14)
1. Method of producing small components (1), in particular pressure or similar sensors, which are made up of at least two individual units (5, 8) superimposed in layers, comprising the following steps:
a) producing a wafer (2) with a plurality of individual semiconductor units (5);
b) producing at least one shaped connecting part (4) with a plurality of individual connecting units (8);
c) aligning the wafer (2) and the shaped connecting part (4) in such a manner that an individual semiconductor unit (5) is respectively arranged opposite an individual connecting unit (8), d) simultaneously joining each individual semiconductor unit (5) with its respective opposite individual connecting unit (8), the wafer (2) and the shaped connecting part (4) being maintained;
e) producing the small components (1) by means of simultaneously separating the wafer (2) and the shaped connecting part (4) along separating lines (9) between the individually joined individual semiconductor units (5) and individual connecting units (8).
a) producing a wafer (2) with a plurality of individual semiconductor units (5);
b) producing at least one shaped connecting part (4) with a plurality of individual connecting units (8);
c) aligning the wafer (2) and the shaped connecting part (4) in such a manner that an individual semiconductor unit (5) is respectively arranged opposite an individual connecting unit (8), d) simultaneously joining each individual semiconductor unit (5) with its respective opposite individual connecting unit (8), the wafer (2) and the shaped connecting part (4) being maintained;
e) producing the small components (1) by means of simultaneously separating the wafer (2) and the shaped connecting part (4) along separating lines (9) between the individually joined individual semiconductor units (5) and individual connecting units (8).
2. Method according to claim 1, characterized in that - a wafer (2) is produced with a plurality of wafer subunits (6), - a shaped carrier part (3) is produced with a plurality of carrier subunits (7), the wafer (2) and the shaped carrier part (3) with wafer subunits (6) and carrier subunits (7) aligned with respect to each other being connected with a plurality of individual semiconductor units (5) consisting of wafer subunits (6) and carrier subunits (7) to form a built-up wafer, and that the steps (d) and (e) are carried out with the built-up wafer.
3. Method according to claim 2, characterized in that the wafer (2), shaped carrier part (3) and shaped connecting part (4) are joined simultaneously.
4. Method according to claim 2, characterized in that the wafer (2), the shaped carrier part (3) and the shaped connecting part (4) are joined one after the other.
5. Method according to claim 1, characterized in that the individual semiconductor units (5) and the individual connecting units (8) are joined with each other by means of eutectic or anodic bonding or by means of adhesion.
6. Method according to claim 1, characterized in that following step e), a further joining step is carried out in order to join the small components (1) with additional holding elements (10).
7. Method according to claim 6, characterized in that the further joining step includes a glass soldering, a bonding, an adhesion, an electron-beam welding or a laser welding process.
8. Method according to claim 1 or 2, characterized in that the wafer (2), the formed connecting part (4) and possibly the formed carrier part (3) are produced from materials with the same or similar coefficients of thermal expansion.
9. Method according to claim 1, characterized in that the wafer (2) is produced from silicon and the formed connecting part (4) from glass, vacon or kovar.
10. Method according to claim 2, characterized in that the shaped carrier part (3) is produced from glass or pyrex.
11. Method according to claim 2, characterized in that the small components (1) are pressure sensors, the individual semiconductor units (5) being produced as elements exposable to pressure and the individual connecting units 88) being produced as terminal elements.
12. Method according to one of the preceding claims, characterized in that in a further method step, a connecting foil (11) having strip conductors (12) leading along webs (15) to individual terminals (13) is mounted onto the individual semiconductor units (5) of the small components (1) in such a manner that the individual terminals (13) come to lie on and in contact with terminal spots (14) of the individual semiconductor units (5).
13. Method according to claim 12, characterized in that the connecting foil (11) is produced from polyimide or another flexible material.
14. Method according to claim 12 or 13, characterized in that the connecting foil (11) is connected by means of adhesion, soldering or tape-bonding to the individual semiconductor units (5) or contacted therewith by means of other suitable connecting processes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19934321804 DE4321804A1 (en) | 1993-06-30 | 1993-06-30 | Process for the production of small components |
| DEP4321804.0 | 1993-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2143641A1 true CA2143641A1 (en) | 1995-01-12 |
Family
ID=6491630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002143641A Abandoned CA2143641A1 (en) | 1993-06-30 | 1994-06-30 | Process for producing miniature components |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0657024A1 (en) |
| CA (1) | CA2143641A1 (en) |
| DE (1) | DE4321804A1 (en) |
| WO (1) | WO1995001557A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6189205B1 (en) * | 1996-08-27 | 2001-02-20 | Robert Bosch Gmbh | Process for producing pressure sensors |
| DE19826426C2 (en) * | 1998-06-16 | 2003-08-21 | Elbau Elektronik Bauelemente G | Miniaturized electronic system and method for its manufacture |
| DE19843917A1 (en) * | 1998-09-24 | 2000-03-09 | Siemens Ag | Semiconductor pressure sensor,for use as gas or liquid pressure sensor; has surface micromechanical sensor element individualized from wafer fixed to stabilizing support |
| DE19902450B4 (en) * | 1999-01-22 | 2006-04-20 | Festo Ag & Co. | Miniaturized electronic system and method suitable for its production |
| US7932611B2 (en) | 2003-12-03 | 2011-04-26 | PAC Tech—Packaging Technologies GmbH | Device for alternately contacting two wafers |
| DE10361521A1 (en) * | 2003-12-03 | 2005-07-07 | Pac Tech - Packaging Technologies Gmbh | Method of alternate contacting of two wafers especially a semiconductor and a functional component wafer uses selected laser wavelength to fuse contact metallization only |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
| US3355636A (en) * | 1965-06-29 | 1967-11-28 | Rca Corp | High power, high frequency transistor |
| DE3147729A1 (en) * | 1981-12-02 | 1983-06-09 | Siemens AG, 1000 Berlin und 8000 München | INTERMEDIATE CARRIER TAPE WITH WIRING ELEMENTS FOR FITTING WITH CHIP COMPONENTS |
| ATE34613T1 (en) * | 1983-11-10 | 1988-06-15 | Kristal Instr Ag | TRANSDUCER ELEMENT, PROCESS FOR ITS MANUFACTURE AND USE FOR A PRESSURE TRANSDUCER. |
| DE3500613A1 (en) * | 1984-03-09 | 1985-09-19 | Hans W. Dipl.-Phys. ETH Winterthur Keller | Piezo-resistive pressure-measurement cell |
| US4800758A (en) * | 1986-06-23 | 1989-01-31 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
| FR2616542B1 (en) * | 1987-06-12 | 1989-10-06 | Renault | METHOD FOR THE COLLECTIVE MANUFACTURE OF CAPACITIVE PRESSURE SENSORS |
| GB8718639D0 (en) * | 1987-08-06 | 1987-09-09 | Spectrol Reliance Ltd | Capacitive pressure sensors |
| FI893874A (en) * | 1989-08-17 | 1991-02-18 | Vaisala Oy | KONTAKTFOERSEDD GIVARE MED SKIKTSTRUKTUR SAMT FOERFARANDE FOER UTFOERANDE AV KONTAKTERINGEN. |
| JPH04357881A (en) * | 1991-06-04 | 1992-12-10 | Mitsubishi Electric Corp | Semiconductor pressure sensor wafer and manufacture thereof |
| DE4239132C2 (en) * | 1991-11-20 | 2002-06-06 | Denso Corp | Method of fabricating an integrated pressure sensor |
-
1993
- 1993-06-30 DE DE19934321804 patent/DE4321804A1/en not_active Withdrawn
-
1994
- 1994-06-30 WO PCT/EP1994/002136 patent/WO1995001557A1/en not_active Application Discontinuation
- 1994-06-30 EP EP94923705A patent/EP0657024A1/en not_active Withdrawn
- 1994-06-30 CA CA002143641A patent/CA2143641A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP0657024A1 (en) | 1995-06-14 |
| DE4321804A1 (en) | 1995-01-12 |
| WO1995001557A1 (en) | 1995-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4794092A (en) | Single wafer moated process | |
| US7151426B2 (en) | Latching micro magnetic relay packages and methods of packaging | |
| JP2660299B2 (en) | Method for manufacturing composite wafer type integrated circuit chip | |
| US5596244A (en) | Composite electronic component and method of manufacturing the same | |
| US3859718A (en) | Method and apparatus for the assembly of semiconductor devices | |
| US6893890B2 (en) | Method of producing a light-emitting diode | |
| CA2143641A1 (en) | Process for producing miniature components | |
| US3978516A (en) | Lead frame assembly for a packaged semiconductor microcircuit | |
| JPH04213867A (en) | Electronic component mounting board frame | |
| US6717244B1 (en) | Semiconductor device having a primary chip with bumps in joined registration with bumps of a plurality of secondary chips | |
| EP0582694B1 (en) | Semiconductor device with a semiconductor substrate and a ceramic plate as lid | |
| EP0032565B1 (en) | Mounting and packaging of silicon devices on ceramic substrates, and packaged silicon devices | |
| US20200182728A1 (en) | Pressure sensor with external vertical electrical interconnection system | |
| JPH0266480A (en) | Method for assembling and mounting sensor element | |
| JP5046875B2 (en) | Manufacturing method of semiconductor device | |
| JPH09101219A (en) | Pressure sensor | |
| JP3352471B2 (en) | Film carrier | |
| CN1631066A (en) | Latching micro magnetic relay packages and methods of packaging | |
| JPS607167A (en) | Manufacture of diode | |
| JPH02281610A (en) | Lead frame and manufacture of electronic component package using same | |
| KR20030095435A (en) | The substrate of which upper side terminal and lower side terminal are connected each other, and the method for making it | |
| JPH06260746A (en) | Solder connection structure | |
| JPH01215050A (en) | Semiconductor device | |
| JPH0854542A (en) | Structure of optical element mounting part of optical coupler | |
| JPH04320040A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 19980630 |